Lecture 6: electronic band structure of solidsLecture 6: electronic band structure of solids Prof....
Transcript of Lecture 6: electronic band structure of solidsLecture 6: electronic band structure of solids Prof....
Solid state physics for Nano
Lecture 6: electronic band structure of solids
Prof. Dr. U. Pietsch
)cos(2),( kaEmkE mm
at
m
Band of allowed states Overlap between two neighboured atomic states results in 2 states : bonding and antibonding state. Bonding between 1023 atomic in solids results in 2 1023 solution, which are such as dense that they overlap and create „bands“ separated by „forbidden“ zones. Empirically described by
describes decrease of energy due to bonding, 4 measures the band width between k=0 and k=p/a. Many properties of solids can be described in terms of „electron gas“ (Sommerfeld) : electrons are moving as non-interacting particles with spin1/2
)cos(2),( kaEmkE mm
at
m
It describes a dispersion relation between energy E and momentum k
m
pv
mE
2
²²
2These „free electrons have kinetic energy
m
kE
2
²²
electron gas in solid
ikx
k e0
What happens, if k is approaching k=p/a ?
If k< p/a l>a no interaction of electron wave with lattice if k≈p/a l ≈ a electron wave „reflected“ at lattice planes
Ansatz: Electron wave propagates free as long as k< p/a
For k≈p/a =G/2 wave is Bragg reflected
ikx
k e
0
)sin(2)(
)cos(2)(
00
00
kxiee
kxee
ikxikx
ikxikx
1²|| ikxikxee)²(sin²||
)²(cos²||
kx
kx
²||
Largest probability between atoms
²||
Largest probability at atoms
Vkm
kE
Vkm
kE
²2
²)(
²2
²)(
In terms of energy:
gEVV Energy gap
Valid also k=2p/a ; k=3p/a….. Extended zone scheme
Parabel origin also at k=p/a ; k=2p/a….. Overlap of peridodic zone scheme Folding into -p/a < k < p/a 1st Brillouin zone
Reduced zone scheme
“effective mass” of electrons in solid
Due to specific badnd curvature
k
Ev
1
dt
dk
k
E
dt
dv
²
²1
eEF
dt
dk
Fk
E
dt
dv
²
²
²
1
amdt
dv
k
EF *
²
²
²
²
²
²
1
*
1
k
E
m
effective mass
Number of states per band in 1st BZ: )³2
(a
Vp
a
ka
pp
1 or 3 electrons in upper band
³³ NaL )³2
(L
Vp
N
La)³
2/()³
2(
pp
Because of spin 2N states per energy band
2 or 4 electrons in upper band: Be, Mg, Ca, ……Sn T>18°C metal Si, Ge – typical semiconductors, Eg 0.1..2 eV C, SiC … isolators Eg = 10eV
Na: 1s²2s²2p6,3s1= Ne 3s1 upper band
is filled with 1 electron only
Higherst populed energy – FERMI energy
EF
Density of states in 1D (DOS) particle in box model, standing waves
nn E
xm
²
²
2
²0)()0( Lnn
F
N
n
Nn
n
n
NEN
LmE
nLm
EEF
3
1
2/
1
2/
1
³2
²2
1
2
²
²²2
1
2
²22
dE
dn
ervallenergy
statesofnumberED 2
int
__)(
EE
mL
n
mL
dE
dnED
1
2
41
²
²82)(
Total energy is:
)²4(
²
2
²²
22
²
L
N
mL
n
mE F
F
N=2n due to spin
Fermi energy
Fermi energy in 3D Standing waves in 3D )sin()sin()sin()(
³8 zyxr
L
n
L
n
L
n
Lnzyx ppp
Alternative rki
Vk er 1)(
),,(),,(),,( LzyxzLyxzyLx kkk
........;;2
;...;4
;2
,0 zyx kkL
n
LLk
ppp
xiknLiniLnxiLLxniLxik xx eeeeee pppp 22/2)/)(2()(
)(2
²
2
²²)( 222
zyx kkkmm
kkE
m
kkE F
2
²²)(
Fermi sphere with radius kF
Boundary conditions
Dispersion relation for electrons
Cu Si
33
²3)³
2/(
3
42 F
F kV
L
kN
p
pp 3/2
3
)²3
(2
²
²3
V
N
mE
V
Nk
F
F
p
p
FF mvk
3/1)²3
(V
N
mvF
p
FF kTE
Fermi momentum 3/1)²3
(V
NmvF
p
Fermi velocity
Fermi temperature
Example for Li: N/V= 4.6 1022 cm-3 =1 el/Li atom
kF = 1.1 108 /cm = 1.1 /A vF = 1.3 108 cm/s = 1.3 10³ km/s= 0.04% c EF = 4.7 eV TF = 55.000K
https://www.zahlen-kern.de/editor/
Number of electrons in sphere with radius kF
Analogous to phonons: Density of states ||
)³2
(2)(Egrad
dFLED
kp
For perfect sphere:
²²/²
²4)³
2(2)(
mkV
mk
kLED
p
p
p
m
kEgradk
²||
²4 kdF p
EmV
ED
2/3
²
2
²)(
p
Density of states in 3D (DOS)
EF
Influence of Temperature on DOS Bonding energy for lowest energy levels are large, all levels occupied
F
F
EEfor
EEforEf
___0
__1)(At T=0 probability of occupation
At T>0 , thermal energy kT, only levels close to EF can be redistributed 1)exp(
1),(
kT
µETEf
FERMI – DIRAC distribution µ ≈ EF chemical potential
Impact of electrons to specific heat
Only electrons close to EF can gain energy of about kT this results in range EF- ½ kT non occupied states (2) and in range EF + ½ kT (1) and newly occopied states, all other electrons cannot contribute to specific heat
2
1 )),(1()()()2(
),()()()1(
0
TEfEDEEdE
TEfEDEEdEE
F
F
E
F
E
Fel
0
)()(T
fEDEEdE
T
Ec Fel
Integral differs from zero only close to EF
]²1)[exp(
)exp(
²
kT
EEkT
EE
F
F
F
kT
EE
T
f
For kT << EF : D(E) = D(EF) TkEDT
fEDEEdE
T
Ec FFel ²)(²)()(
31
0
p
FF EmV
ED
2/3
²
2
²)(
p
3/2)²3
(2
²
V
N
mEF
pusing
TT
TNk
E
kTNkc
FF
el pp ²²21
21
Separation between electron and phonon contribution to specific heat
C/T
T²
³ATTctotal
Impact of electrons to specific heat
m
Ev F
F
2
eNN
jv
pe
D)(
Electrons close to EF contribute to charge transport only. Their characteristic velocity is Fermi velocity,
expressing the maximum velocity an electron can reach before scattering at another electron, defect, phonon aso. Is is much larger vF >> drift velocity
Electrical charge transport
By collosion with defects, phonons etc. Fermi sphere is shifted constantly
dt
dk
dt
dpeEF
Means, Fermi sphere is constantly shifted
m
Fdk – is collision time
Ne, Np – concentration of electrons and holes, vD is the real velocity of signal transport . Force, F, acting on an electron within electric field E
In metals n is constant (and high) , µ and j increase with decreasing the temperature or decrease with increasing the temperature due to the increase of scattering at thermally excited phonons and defects. Opposite for semiconductors, the µ and j increases for increasing temperature because more and more electrons are able to occupy states within the conduction band and can contribute to charge transport.
Electric transport
ETeTnETTj )()()()(
µ - is the mobility (Beweglichkeit) [cm²/Vs], n – number of „free“ charge carrier.
Fmdvdk 4m
eEvdv D
m
Enenedvj
² using
ne is transported amount of charge, – scattering time Gained energy in field E is donated to lattice
²²²
2
)²2(21
Em
Enedvm
t
Q
Joules heat
Temperature dependence
m
ne
²
Cyclotron resonance spectroscopy
Hall effect
BevF rBermF ²rv m
eBc
c
eBm
*
m* from exp. c
vx
Bz
Fy
][ BveF
zxy BevF creates Hall field EH
zxH BeveE xx
zxH
nevj
BvE
zxHzxH BjRBjne
E 1 RH – Hall constant
Sign and concentration Of charge carriers
Specific band structure of semiconductors
Generell insolator structure: with Eg >kT, 0.2…3 eV
j )exp(0kT
Eg
Band structure in k-space:
[100] [111] G – origin of Brillouin zone
Direct band semiconductor
Dispersion of electrons Dispersion of hole states
*2
²²)(
e
VBCBm
kEkE
*2
²²)(
h
VBm
kkE
Indirect band semiconductor
Absorption vs direct gap = 3.4 eV generation of electron hole-pairs Recombination via indirect gap : 1.1 eV
phononglight EE
Few band structure parameters
DOS of Semiconductors
1)exp(
1),(
kT
µETEf E-µ >>kT; EF≈µ )exp(),(
kT
µETEf
Probability to occupy a state in CB:
*2
²²)(
e
VBCBm
kEkE
ge
e EEmV
ED
2/3*
²
2
²2)(
p
Number of electrons on CB:
0
*
0
)exp(²
2
²2
1),()(
kT
EEE
mdETEfEDn
g
ge
ep
)exp(²
22
2/3*
kT
EkTmn
ge
p
Probability to find holes )exp(),(1kT
µETEff eh
E
mVED h
h
2/3*
²
2
²2)(
p
Number of holes in VB: )exp(²
22
2/3*
kT
µkTmp h
p
For intrinsic semiconductor yields : n=p )exp(exp( 2/32/3
kt
µm
kT
Eµm h
g
e
kT
Eµ
m
m g
h
e
2
ln2
3*
*
*
*
ln4
3
2 h
eg
m
m
kT
Eµ
Because 2nd term is very small : µ=EF= Eg/2
Thermally excited charge carriers: )2
exp()(²
22 4/3**
2/3
kT
Emm
kTpn
g
hn
p
pe eµTpeµTnkT
Eg)()()
2exp(0
Carrier concentration in CB and VB
eVESicmpn
eVEGecmpn
gii
gii
14.1__10*4.1
67.0__10*5.2
310
313
µe(Si) = 1300 Vs/cm²; µh(Si)=500Vs/cm² µe(GaAs) = 8800 Vs/cm²; µh(GaAs)=400Vs/cm²
Temperature dependence of intrinsic charge carrier concentration
Doping of semiconductors
Energy states of dopands calculated by effective mass theory: (H-atom modell): replacing e²e²/e and m me,h. where e is the statistic dielectric constant of host material.
Effective number of charge carriers can be increased by DOPING:
replacement of very few Si atoms by P, As,…(donators) or by B, Al,…(acceptors).
²
1
²6.13
,
,nm
meVE
he
ADe
Donator energy
Radius of donator electron
²0529.0,
, nm
mnmr
he
AD
e
²²2
4
n
meEH
6meV (Ge), 20meV (Si)
8nm (Ge), 3nm(Si)
Donator doped semiconductors : n- conductivity Acceptor doped semicductor : p - conductivity
)exp(
)exp(
kT
Ep
kT
En
A
d
Temperature dependence of doped semiconductors
Low temperatures
high temperatures
)2
exp(kT
Epn
g
Excitation of dopands
Formation of e-h pairs