Lec3-Dislocation, Slip Systems and Twining
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Transcript of Lec3-Dislocation, Slip Systems and Twining
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L-03
ENGINEERINGMATERIALS
DISLOCATION, SLIP SYSTEMS ANDTWINING
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4.3 IMPURITIES IN SOLIDS-L-03 A pure metal consisting of only one type of atom just
isnt possible; impurity or foreign atoms will always bepresent, and some will exist as crystalline point defects.
In fact, even with relatively sophisticated techniques, it is
difficult to refine metals to a purity in excess of
99.9999%. At this level, on the order of 1022 to 1023 impurity atoms
will be present in one cubic meter of material.
Most familiar metals are not highly pure; rather, they
are alloys, in which impurity atoms have been addedintentionally to impart specific characteristics to the
material.
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Crystal Defects A perfect crystal, with every atom of the same
type in the correct position, does not exist.
All crystals have some defects. Defects
contribute to the mechanical properties of
metals. these defects are commonly intentionally
used to manipulate the mechanical properties
of a material. Adding alloying elements to a metal is one
way of introducing a crystal defect.3
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Crystal Defects just keep in mind that crystalline defects
are not always bad.
There are basic classes of crystal defects:
point defects, which are places where anatom is missing or irregularly placed in
the lattice structure. Point defects
include lattice vacancies, self-interstitialatoms, substitution impurity atoms, and
interstitial impurity atoms
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Figure 4.1 Two-dimensional
representations of a
vacancy and a
self-interstitial.
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Figure 4.2 Two-dimensional schematic representations of
substitutional and interstitial impurity atoms.
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Crystal Defects linear defects, which are groups of atoms in
irregular positions. Linear defects are
commonly called dislocations.
planar defects, which are interfaces between
homogeneous regions of the material. Planar
defects include grain boundaries, stacking
faults and external surfaces.
It is important to note at this point that plastic
deformation in a material occurs due to the
movement of dislocations (linear defects).7
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Crystal Defects Millions of dislocations result for plastic
forming operations such as rolling andextruding.
It is also important to note that any defect in
the regular lattice structure disrupts themotion of dislocation, which makes slip or
plastic deformation more difficult.
These defects not only include the point andplaner defects mentioned above, and also
other dislocations.8
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Crystal Defects Dislocation movement produces
additional dislocations, and when
dislocations run into each other it
often impedes movement of thedislocations.
This drives up the force needed to
move the dislocation or, in other
words, strengthens the material.9
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Point Defects A substitutional impurity atom is an atom of a
different type than the bulk atoms, which has
replaced one of the bulk atoms in the lattice.
Substitutional impurity atoms are usually close in
size (within approximately 15%) to the bulk atom.
An example of substitutional impurity atoms is
the zinc atoms in brass. In brass, zinc atoms with
a radius of 0.133 nm have replaced some of thecopper atoms, which have a radius of 0.128 nm.
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Point Defects Interstitial impurity atoms are much smaller than the
atoms in the bulk matrix. Interstitial impurity atoms
fit into the open space between the bulk atoms ofthe lattice structure. An example of interstitialimpurity atoms is the carbon atoms that are addedto iron to make steel. Carbon atoms, with a radius of0.071 nm, fit nicely in the open spaces between thelarger (0.124 nm) iron atoms.
Vacancies are empty spaces where an atom shouldbe, but is missing. They are common, especially athigh temperatures when atoms are frequently and
randomly change their positions leaving behindempty lattice sites. In most cases diffusion (masstransport by atomic motion) can only occur becauseof vacancies.
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Linear Defects - Dislocations Dislocations are another type of defect in
crystals. Dislocations are areas were the atomsare out of position in the crystal structure.Dislocations are generated and move when astress is applied. The motion of dislocations
allows slip plastic deformation to occur. The TEM (Transmission Electron Microscope-
image resolutions of 1 - 2 Angstroms) allowedexperimental evidence to be collected that
showed that the strength and ductility of metalsare controlled by dislocations.
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Dislocations
why study Dislocations andStrengthening Mechanisms?With a knowledge of the nature of dislocations and
the role they play in the plastic deformation process,
we are able to understand the underlying
mechanisms of the techniques that are used to
strengthen and harden metals and their alloys.
Thus, it becomes possible to design and tailor the
mechanical properties of materialsfor example, the
strength or toughness of a metalmatrix composite.
14Underlying-
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materials may experience two kinds ofdeformation: elastic and plastic.
Plastic deformation is permanent, and strengthand hardness are measures of a materialsresistance to this deformation.
On a microscopic scale, plastic deformationcorresponds to the net movement of largenumbers of atoms in response to an applied
stress. During this process, inter atomic bonds must be
ruptured and then reformed.
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DISLOCATION
In crystalline solids, plastic deformation
most often involves the motion of
dislocations, linear crystalline defects.
Dislocations and Plastic Deformation.
a type of linear crystalline defect is
known as dislocation.
Edge and screw are the two
fundamental dislocation types.
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1. the nature of a dislocation (i.e., edge, screw, or
mixed) is defined by the relative orientations of
dislocation line and Burgers vector.2. For an edge, they are perpendicular(Figure 4.3),
whereas for a screw, they are parallel (Figure
4.4); they are neither perpendicular nor parallel
for a mixed dislocation.
3. Virtually all crystalline materials contain some
dislocations that were introduced during
solidification, during plastic deformation, and asa consequence of thermal stresses that result
from rapid cooling.
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Figure 4.3 The atom positions around an edge dislocation; extra half-plane of
atoms shown in perspective.
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Figure 4.4 (a) A
screw dislocation
within a crystal.
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Edge Dislocations
The edge defect can be easily visualized as an
extra half-plane of atoms in a lattice. The dislocation is called a line defect because
the locus of defective points produced in the
lattice by the dislocation lie along a line. This line runs along the top of the extra half-
plane.
The inter-atomic bonds are significantlydistorted only in the immediate vicinity of the
dislocation line.
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Figure7.3 Representation of the analogy
between caterpillar and dislocation motion.
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Figure 7.2 The
formation of a
step on
the surface of
a crystal by the
motion of (a)
an edge
dislocation and
(b) a screw
dislocation.
Note that for
an edge, the
dislocation line
moves in the
direction of
the applied
shear stress for
a screw, the
dislocation line
motion is
perpendicular
to the stress
direction.
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7.4 SLIP SYSTEMS Dislocations do not move with the same degree of ease
on all crystallographic planes of atoms and in all
crystallographic directions.
Ordinarily there is a preferred plane, and in that plane
there are specific directions along which dislocation
motion occurs. This plane is called the slip plane; it follows that the
direction of movement is called the slip direction.
This combination of the slip plane and the slip direction is
termed the slip system.
The slip system depends on the crystal structure of the
metal and is such that the atomic distortion that
accompanies the motion of a dislocation is a minimum.24
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SLIP SYSTEMS For a particular crystal structure, the slip plane is
the plane that has the most dense atomic
packingthat is, has the greatest planar density. The slip direction corresponds to the direction, in
this plane, that is most closely packed with atomsthat is, has the highest linear density.
Consider, for example, the FCC crystal structure, aunit cell of which is shown in Figure 7.6a.
There is a set of planes, the {111} family, all ofwhich are closely packed.
A (111)-type plane is indicated in the unit cell; inFigure 7.6b, this plane is positioned within theplane of the page, in which atoms are nowrepresented as touching nearest neighbors.
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Figure 7.6 (a) A {111}slip system shown within an FCC
unit cell. (b) The (111) plane from (a) and three
slip directions (as indicated by arrows) within that plane
comprise possible slip systems.
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SLIP SYSTEMS Slip occurs along-type directions within the
{111} planes, as indicated by arrows in Figure 7.6.
Hence, {111}represents the slip plane anddirection combination, or the slip system for FCC.
Figure 7.6b demonstrates that a given slip plane maycontain more than a single slip direction.
Thus, several slip systems may exist for a particularcrystal structure; the number of independent slipsystems represents the different possiblecombinations of slip planes and directions.
For example, for face-centered cubic, there are 12 slipsystems: four unique {111} planes and, within eachplane, three independentdirections.
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SLIP SYSTEMS The possible slip systems for BCC and HCP crystal
structures are listed in Table 7.1. For each of these structures, slip is possible on
more than one family of planes (e.g., {110}, {211},
and {321} for BCC). For metals having these two crystal structures,
some slip systems are often operable only at
elevated temperatures. Metals with FCC or BCC crystal structures have a
relatively large number of slip systems (at least
12).
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SLIP SYSTEMS These metals are quite ductile because extensive
plastic deformation is normally possible along thevarious systems.
Conversely, HCP metals, having few active slipsystems, are normally quite brittle.
With regard to the process of slip, a Burgers vectorsdirection corresponds to a dislocations slip direction,whereas its magnitude is equal to the unit slipdistance (or interatomic separation in this direction).
Of course, both the direction and the magnitude ofbwill depend on crystal structure, and it is convenientto specify a Burgers vector in terms of unit cell edgelength (a) and crystallographic direction indices.
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