Latest Advances in Si DRIE for MEMS XT tilt & overall performance exceeds that of competitor DRIE 13...
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Transcript of Latest Advances in Si DRIE for MEMS XT tilt & overall performance exceeds that of competitor DRIE 13...
©2017 SPTS Technologies - Confidential & Proprietary
Jo Carpenter
Etch Product Management
Latest advances in Si DRIE for MEMS
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This presentation and the information contained within it is the property of SPTS Technologies and is confidential. Any duplication, disclosure, distribution, dissemination or copying
of this presentation or its contents or use for any purpose other than that for which it is supplied is strictly prohibited, without the prior written consent of SPTS Technologies.© 2017 SPTS Technologies
Etch Process Modules
SynapseICP
HDP
Low pressure
Higher ion density
HDP
Low pressure
High ion density
Compound layers
nitrides, polymers
Dielectrics, SiC,
PZT, sapphire ....
Deep Si
Some oxide
Dual HDP source
Medium pressure
High neutral density
DSi-v & Rapier Family
≤200mm & 2/300mm
296 & 400mm Frames≤200mm
≤200mm
≤200mm
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This presentation and the information contained within it is the property of SPTS Technologies and is confidential. Any duplication, disclosure, distribution, dissemination or copying
of this presentation or its contents or use for any purpose other than that for which it is supplied is strictly prohibited, without the prior written consent of SPTS Technologies.© 2017 SPTS Technologies
Broadest DRIE Etch Know-How
High Aspect Ratio
1.6 x 98 µm trenches
~60:1 AR
Smooth walls
<20nm scallops
Through Wafer
Sensors
Microphones
NEMS
50nm features
High Rate
Cavities, Caps,
ink-jets High Aspect Ratio
~0.4 µm trenches
~90:1 AR
SOI
2.5 x 25µm
Low Tilt
<0.1º
Mixed isotropic/
anisotropic
processing
High Aspect Ratio
4 x 160 µm trench/TSV
40:1 AR
Complex shapes
High Aspect Ratio
8 x 180 µm trench/TSV
22:1 AR
High Aspect Ratio
1 x 40µm trench
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This presentation and the information contained within it is the property of SPTS Technologies and is confidential. Any duplication, disclosure, distribution, dissemination or copying
of this presentation or its contents or use for any purpose other than that for which it is supplied is strictly prohibited, without the prior written consent of SPTS Technologies.© 2017 SPTS Technologies
■ PoR for >60% of top 30 MEMS companies & all top 20 MEMS Foundries
■ >90% market share in ≤200mm DRIE
Total DRIE PMs = 1204
Including 160 Rapier plasma sources
Leading Install Base for DRIE
First shipments of Bosch
licensed modules in 1995
Yole – Top 30 MEMS Companies 2016
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This presentation and the information contained within it is the property of SPTS Technologies and is confidential. Any duplication, disclosure, distribution, dissemination or copying
of this presentation or its contents or use for any purpose other than that for which it is supplied is strictly prohibited, without the prior written consent of SPTS Technologies.© 2017 SPTS Technologies
■ DRIE market is more competitive than ever
■ Growing number of vendors, lower module numbers
■ Forecast >16% growth just in packaging annually up to 2022
■ >1200PMs with DSi, DSi-v, Rapier and predecessors
■ But customer needs do not stand still
■ Technology and Productivity
■ Incremental improvements plus new functionality
■ Rapier XT is an evolution of the Rapier DRIE PM
■ Extending process operating windows
■ Additional hardware functionality
■ Improved service access and module architecture
Next Generation DRIE
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This presentation and the information contained within it is the property of SPTS Technologies and is confidential. Any duplication, disclosure, distribution, dissemination or copying
of this presentation or its contents or use for any purpose other than that for which it is supplied is strictly prohibited, without the prior written consent of SPTS Technologies.© 2017 SPTS Technologies
■ Improved packaging/service access
■ Design driven by customer feedback
■ Rapier becoming loaded
■ Updates some OEM parts
■ Pre-empt any obsolescence issues
■ Source internals unchanged
■ Straightforward process transfer
■ Critical process transfers completed
■ Rapier XT has widest DRIE process window
Rapier XT Module
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This presentation and the information contained within it is the property of SPTS Technologies and is confidential. Any duplication, disclosure, distribution, dissemination or copying
of this presentation or its contents or use for any purpose other than that for which it is supplied is strictly prohibited, without the prior written consent of SPTS Technologies.© 2017 SPTS Technologies
Rapier XT
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This presentation and the information contained within it is the property of SPTS Technologies and is confidential. Any duplication, disclosure, distribution, dissemination or copying
of this presentation or its contents or use for any purpose other than that for which it is supplied is strictly prohibited, without the prior written consent of SPTS Technologies.© 2017 SPTS Technologies
■ Rapier XT has fixed, solid-state matching for source RF
■ Combined with AFT RF generator
■ Alters RF frequency within a narrow band
■ Internal algorithm adjusts frequency looking for minimum in
reflected power
■ Improves matching and reduces reflected power levels
■ Recipe choice run fixed or use the AFT
■ Benefits include…
■ Reproducible plasma for consistent results
■ Stable power output/ RF coupling
■ High control precision
■ Increased efficiency
■ Simple integration
AFT
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This presentation and the information contained within it is the property of SPTS Technologies and is confidential. Any duplication, disclosure, distribution, dissemination or copying
of this presentation or its contents or use for any purpose other than that for which it is supplied is strictly prohibited, without the prior written consent of SPTS Technologies.© 2017 SPTS Technologies
■ Move to faster switching MFCs allowing access to <1s
switching times
■ Improving sidewall conditions/ quality at matched etch rates
■ Higher rates without major compromise to sidewall conditions
Fast Switching MFCs
New MFCs @ 0.5s
~6µm/min
~50nm Scallops
Current Hardware @ 1s
~3µm/min
~30nm Scallops
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This presentation and the information contained within it is the property of SPTS Technologies and is confidential. Any duplication, disclosure, distribution, dissemination or copying
of this presentation or its contents or use for any purpose other than that for which it is supplied is strictly prohibited, without the prior written consent of SPTS Technologies.© 2017 SPTS Technologies
■ Use of deposition rate/uniformity as a metric
■ New combination of cooling hardware
Cooling Options for 200mm DRIE
200mm Si wafer – C4F8 Process
AfterBefore
No hot spot at centre location of ECE
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This presentation and the information contained within it is the property of SPTS Technologies and is confidential. Any duplication, disclosure, distribution, dissemination or copying
of this presentation or its contents or use for any purpose other than that for which it is supplied is strictly prohibited, without the prior written consent of SPTS Technologies.© 2017 SPTS Technologies
■ Blanket removal of etch polymer with an O2 plasma
■ Measure of ion density variation at the wafer level
Polymer Influence on Tilt
Single SourceDual SourceICP
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This presentation and the information contained within it is the property of SPTS Technologies and is confidential. Any duplication, disclosure, distribution, dissemination or copying
of this presentation or its contents or use for any purpose other than that for which it is supplied is strictly prohibited, without the prior written consent of SPTS Technologies.© 2017 SPTS Technologies
■ Improved polymer uniformity with new cooling hardware
■ Combined with appropriate wafer edge furniture
■ Brings overall wafer tilt <0.1º
Tilt Performance
Rapier XT tilt & overall performance exceeds that of competitor DRIE
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This presentation and the information contained within it is the property of SPTS Technologies and is confidential. Any duplication, disclosure, distribution, dissemination or copying
of this presentation or its contents or use for any purpose other than that for which it is supplied is strictly prohibited, without the prior written consent of SPTS Technologies.© 2017 SPTS Technologies
■ Rapier XT has additional DRIE performance capability
■ Fast switching for improved sidewall control and higher rates
■ Broader overall process window including high flow, low pressure
■ Improved platen temperature control and uniformity
■ <1º tilt eliminating DRIE influence on MEMS devices
■ Revised architecture provides easy maintenance
■ Cleaner cable routing
■ Access to turbo for servicing etc
■ Commonality with existing Rapier
■ Software
■ Chamber volumes and furniture
■ Endpoint options
■ Provides DRIE option to cover all applications
■ High rate cavity etch to fine control features
Summary
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This presentation and the information contained within it is the property of SPTS Technologies and is confidential. Any duplication, disclosure, distribution, dissemination or copying
of this presentation or its contents or use for any purpose other than that for which it is supplied is strictly prohibited, without the prior written consent of SPTS Technologies.© 2017 SPTS Technologies
Thank you for listening!
If you have further questions about the Rapier XT or any other SPTS
products please visit our booth at location ?????