Large area UV SiPMs with extremely low cross-talkparticle.mephi.ru/assets/files/popova_ndip.pdf ·...
Transcript of Large area UV SiPMs with extremely low cross-talkparticle.mephi.ru/assets/files/popova_ndip.pdf ·...
E.Popova 04.07.2011 NDIP 1
Large area UV SiPMs with extremely low cross-talk
Masahiro Teshima1, Razmik Mirzoyan1, Boris Dolgoshein2, Pavel Buzhan2, Elena Popova2, Alexey Stifutkin2, Andrey Ilyin2, Vladimir Kaplin2, Andrey
Zhukov3
1Max-Planck-Institute for Physics, Munich, Germany2Moscow Engineering and Physics Institute, Moscow, Russia
3National Research University Moscow Institute of Electronic Technology
E.Popova 04.07.2011 NDIP 2
Memory of Boris Dolgoshein (1930-2010)
Development of UV sensitive SiPM with extremely low crosstalk for application in MAGIC and EUSO experiments was the last Boris task
Professor MEPHIHead of the particle-physics department of MEPHIInventor of streamer chamber (1962)Developer and pioneer of Transition Radiation Detector (TRD)Since 1993 Boris had developed a new photon detector which he called Silicon PhotoMultiplier (SiPM) in collaboration with DESY and then with Max Planck Institute fur PhysicsFirst in the world large scale SiPM application in Hadron Calorimeter prototype had made by Boris and his team
E.Popova 04.07.2011 NDIP 3
SiPM Sizes 1x1 and 3x3 mm²
µ-cell pitch 50 and 100 µm
Geom. Eff. 40-80%
MEPhI - MPI for Physics R&D collaboration and cooperation with PerkinElmer Industries (now EXCELITAS)
18 different modifications
Test batch have been produced in December 2010
E.Popova 04.07.2011 NDIP 4
SiPM vs MPPC. Maximum PDE. LED 435nm100x100 micron2 (Geometrical Efficiency ~80%), 1x1mm2 T=+25C
0 200 400 600 800 10000
400
800
Channels
0 200 400 600 800 10000
400
800
1200
Eve
nts
Eve
nts
SiPM 100B
MPPC
S10362-11-100U No.50
Equal light
0 1 2 3 4 50,0
0,1
0,2
0,3
0,4
Cro
ssta
lk
Overvoltage ∆ U, V
0 1 2 3 4 50,0
0,5
1,0
1,5
2,0
Num
ber o
f pix
els
Overvoltage ∆ U, V
Hamamatsu S10362-11-100U No.50 (Ubd=68,75) SiPM 100B 1x1 (Ubd=33,51)
On the base of “0” probability
calculated from light spectra
E.Popova 04.07.2011 NDIP 5
Crosstalk and Excess noise factor
0 1 2 3 4 5 60,0
0,1
0,2
0,3
0,4
0,5
MPPC S10362-33-100C No354 3x3mm2 MPPC S10362-11-100U No.50 1x1mm2 SiPM 100B 3x3mm2 SiPM 100B 1x1mm2
Cros
stal
k xt
Overvoltage ∆ U, V0 1 2 3 4 5 6
1,0
1,1
1,2
1,3
1,4
1,5
1,6
MPPC S10362-33-100C No354 3x3mm2 MPPC S10362-11-100U No.50 1x1mm2 SiPM 100B 3x3mm2 SiPM 100B 1x1mm2
ENF
Overvoltage ∆ U, V
epixelsfired A
MeanN1
_><=
0
2exp)(
NENF
Mean=
><σ
N0 initial fired pixels calculated from “0” probabilityXt crosstalkA1e amplitude of single pixel
For light distributed according to Poisson law
xtNN pixelsfired −
=1
0_
E.Popova 04.07.2011 NDIP 6
Timing for 3x3mm2 SiPMs and MPPC 40ps laser 405nm single photon mode. Temperature -20C
33 34 35 36 37 38 39 400
100
200
300
400
500
60067,5 68,0 68,5 69,0 69,5
0
100
200
300
400
500
600
SiPM 50micron 50B SiPM 100micron 100B
FWH
M, p
s
SiPM Bias Voltage, V
MPPC 50micron (S10362-33-050C No254) MPPC 100micron (S10362-33-100C No354)
Preliminary
E.Popova 04.07.2011 NDIP 7
Timing with 3x3mm2 100B SiPM
540 560 580 600 620 640 6600
100
200
300
400
500
600
700
Cou
nt
20 ps/ch
U=38 VFWHM = 205 ps
33 34 35 36 37 380
50
100
150
200
250
300
350
400
FWH
M, p
s
U, V
40ps laser 405nm single photon modeT=-40C
Best value for 3x3mm2 100B SiPM is 205 ps
E.Popova 04.07.2011 NDIP 8
Efficiency measurements with calibrated PIN-diode(Hamamatsu S1337-1010BQ)
200 300 400 500 600 700 800 900 10000
20
40
60
80
100
Inte
rnal
QE
Wavelength λ , nm
ARQEInternalQE =
200 300 400 500 600 700 800 900 10000
20
40
60
80
100
Effic
ienc
y, %
W avelength λ , nm
Calculated AR transparency
Measured QE for test structure
Geiger(U)AInternalQEARPDE ⋅⋅⋅=
Measured PDE for 100B SiPM(overvoltage 15% )
200 300 400 500 600 7000
20
40
60
80
100
A*G
eige
r(U
)
Wavelength λ , nm
A=80%
QEPDEUGeigerA =⋅ )(
Geiger=1
E.Popova 04.07.2011 NDIP 9
PDE checking (pulsed mode LEDs) 100B 1x1mm2 SiPM
350 400 450 500 550 600 650 700 750 8000
10
20
30
40
50
60
70
PDE,
%
W avelength λ , nm
MEPHI XP2020 (error=17%) for U=38V (∆ U=4,7V) Musienko (same type SiPM sample with U=37.5V)
300 350 400 450 500 550 600 6500
10
20
30
40
50
60
70PDE for U=38V (∆ U=4,7V)
PDE,
%
W avelength λ , nm
Comparison with reference XP2020 (error=17%) at MEPHI PIN 10x10 at MEPhI (error=7%) at MEPHI PIN 18x18 at MPI (error=15%) at MPI
Measurements at MEPHI and
CERN (thanks to Y.Musienko)Measurements at MEPHI and MPI
•PDE measured with reference calibrated PIN-diodes is slightly lower then for reference calibrated PMT
•All results are equal within experimental errors
E.Popova 04.07.2011 NDIP 10
Spectral PDE comparison
300 400 500 600 700 8000
20
40
60
80
100
PMT XP2020Q (according to Philips Photonics)
APD EG&G C30626E (NIM A428 (1999) 413-431)
P
DE
, %
wavelength, nm
SiPM 1x1mm2 100B
E.Popova 04.07.2011 NDIP 11
Voltage stability SiPM 100B
0 1 2 3 4 5 60
4
8
12
16
20
24
28
32
Gai
n *1
05
Overvoltage (U), V
0
2
4
6
8
10
12
14
16
Rel
ativ
e ga
in v
aria
tion,
%/1
00m
V
mVV
GdUdG
100%6.2)4( =
0 1 2 3 4 5 60
10
20
30
40
50
60
PD
E(4
35nm
), %
Overvoltage, V
0
2
4
6
Rel
ativ
e pd
e va
riatio
n, %
/100
mV
0 1 2 3 4 5 60,00
0,02
0,04
0,06
0,08
0,10
0,12
cros
stal
k
Overvoltage, V
0
2
4
6
8
10
12
Rel
ativ
e pd
e va
riatio
n, %
/100
mV
mVV
dUd
100%46.0)4( =
εε
mVV
dUd
100%6)4( =
γγ
E.Popova 04.07.2011 NDIP 12
Temperature stability SiPM 100B
0 5 10 15 20 25 30
32,8
33,0
33,2
33,4
33,6
Ubr
eakd
own
(V)
Temperature, C-5 0 5 10 15 20 25 30 35
19
20
21
22
23
24
for U = 37,3 at T = +20 0C ( ∆ U = 4V)
Pix
el g
ain
. 1
05
Temperature T, 0C
var = 0,5 % / 0C
-5 0 5 10 15 20 25 30 350,02
0,03
0,04
0,05var = 2,1 % / 0C
Cro
ssta
lk
Temperature T, 0C
26.4±0.4mV/ºC
-5 0 5 10 15 20 25 30 35
1,55
1,60
1,65
var = 0,2 % / 0C
Num
ber o
f pix
els
fired
(595
nm)
Temperature T, 0C
E.Popova 04.07.2011 NDIP 13
PET Spectrometry with LYSO and Na22
0 200 400 600 800 10000
20
40
60
80
100
120
Even
ts
Channels
MPPC 3x3mm2 50 micron
0 200 400 600 800 10000
50
100
150
200
Even
ts
Channels
SiPM 50B 3x3mm2 50micron
Self triggering modeAmplitude spectra Integration time 1µsLYSO 3x3x5mm3
Without collimator
Preliminary. Setup is not optimized
Energy Resolution (FWHM) ∼14%
0 200 400 600 8000
50
100
150
200
250
300
Eve
nts
Channels
PMT XP2020
E.Popova 04.07.2011 NDIP 14
Timing for PET with LYSO and Na22
Preliminary. Setup is not optimized
FWHM (PMT resolution is not substructed)
SiPM 100B 340ps
SiPM 50B 375ps
MPPC-50 520ps
SiPMs and MPPC are 3x3mm2
SiPM(MPPC)
LYSO
PMT XP2020
Na22
Plastic ∅2cmx1cm
CFD (10%)
TAC
start stop
Energy signal
PC
LYSO 3x3x5mm3 Without collimator
E.Popova 04.07.2011 NDIP 15
Summary
• MEPHI&MPI in cooperation with Excelitas Technologies have been produced SiPMs 1x1 and 3x3 mm2 with extremely high PDE (above 50%) in UV-blue region
• ENF is very close to 1 due to complex crosstalk suppression
• Time jitter (FWHM) for 3x3mm2 SiPM with 100 micron pitch is about 200-300ps and improvements are possible
• Such SiPMs are very promising for Astroparticle and PET applications
• During one year UV SiPMs will be commercial product of Excelitas Technologies
E.Popova 04.07.2011 NDIP 16
SiPM Noise
34 35 36 37 38 39
0,1
1
Dar
k ra
te, M
Hz
Bias voltage U, V
1x1mm type 100B T = +30 0C (U
bd=33,56)
T = +25 0C (Ubd
=33,44)
T = +20 0C (Ubd
=33,32)
T = +15 0C (Ubd
=33,)
T = +10 0C (Ubd
=33,)
T = +5 0C (Ubd
=33,)
T = 0 0C (Ubd
=33,)
E.Popova 04.07.2011 NDIP 17
0 1 2 3 4 5 6 7 8 9100
101
102
103
104
105
106
SiPM 100B 1x1mm 2 ∆ U= 4.7V MPPC S10362-11-100U No.50 1x1mm 2 ∆ U=1.25VD
ark
rate
, Hz
threshould, pixels