L6: Laboratory for Micro- and Nanostructuring and ... raport_2010_final.pdfIMT-Bucharest Scientific...
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IMTIMT-Bucharest Scientific R-Bucharest Scientific Report 2010eport 2010 39
L6: Laboratory for Micro- and NanostructuringL6: Laboratory for Micro- and Nanostructuringand Characterizationand Characterization
Centre of Nanotechnologies
He received the M. Sc. (1993) degree in Physics and PhD title in 2010 from Faculty of Physics, Universityof Bucharest. From 1993 -1997 he was Research Scientist at Research Institute for ElectronicComponents, ICCE Bucharest in the Optoelectronics Laboratory; From 1997 he is Senior Researcher atthe National Institute for R&D in Microtechnologies (IMT Bucharest) in the MicrophysicalCharacterization Laboratory.
His main scientific interests are focused on patterningat the nanoscale using Electron Beam Lithographyand on characterization using Field Emission Scanning Electron Microscopy.
Adrian Dinescu was the leader of several national research projects (Matnantech, Ceres, CEEX) andpartner in international projects (CATHERINE FP7, ASSEMIC- Marie Curie Training Network, FP6) and the author more than15 scientific papers presented at conferences and published in journals.
Mission: Research anddevelopment in the field ofcharacterization and structuringmethods for materials andprocesses at micro andnanometric scale. Application of
high resolution surface investigation techniques to solveengineering problems at these scales, especiallyinvestigation of correlations between technological processparameters-structure and structure-properties order toobtain materials for specific applications etc. Thelaboratory is the first one in Romania developing researchand providing services for nanolithography, using theElectron Beam Lithography technique.
Main areas of expertise: Atomic Force Microscopy (AFM),Scanning Electron Microscopy (SEM), Electron BeamLithography (EBL), Optical Microscopy, Electricalcharacterization of materials and devices.
Research Team: is composed of 3 senior researcherswith background in Physics and Electronic Engineering, anearly stage researcher with background in Chemistry and2 MS students in Electronics.
Specific facilities: • Multifunctional Scanning ProbeMicroscope (SPM) Ntegra Aura –NT-MDT. Features: built-in capacitive sensors, active antivibrationaltable, could be operated under different environments: air,liquid, controlled gaseous atmosphere, low vacuum (10-2torr). Scan range: 100x100x10 ìm, noise level, XY: 0,3nm, Z: 0,06 nm, non-linearity in X, Y with closed-loopsensors < 0.15 %.• FEI Nova NanoSEM 630- Ultra High resolution FieldEmission Gun Scanning Electron Microscope - This SEMdelivers very high resolution surface information at lowaccelerating voltages and can be widely used in manyapplications: nanotechnology, materials analysis,semiconductor technology, quality assurance, life sciences.It features SE and BSE detectors both E-T and in lens, alsoLV BSE detector and high resolution SE detector for lowvacuum working mode, true eucentric sample stage withencoder, charge compensation technique (water vapors).• SEM - TESCAN VEGA II LMU - General PurposeScanning Electron Microscope with thermionic electron gun(tungsten) which is able to achieve 3 nm resolution at 30kV accelerating voltage. For electrostatic chargecompensation it is able to work in low vacuum (nitrogen)up to 150 Pa.• EBL - Raith Elphy Plus - pattern generator forElectron Beam Lithography, attached to Tescan SEM.Features: 6 MHz high-speed pattern generation hardware,16 bit DAC vector scan beam deflection, 2 ns writing speedresolution.• Raith e_Line - Electron beam lithography and
nanoengineering workstation. It is a versatile electronbeam lithography system having complied with the specificrequirements of interdisciplinary research at nanoscale.The main features are: thermally assisted field emissiongun, laser interferometer stage with 100 mm by 100 mmtravel range and 2 nm resolution achieved by closed-looppiezo-positioning, modules for nanomanipulation, EBIDand EBIE. Minimum achievable line width is better than 20nm, stitching accuracy 40 nm and overlay accuracy 40 nm.• (Nano Indenter) G200 - Agilent TechnologiesNanomechanical characterization equipment operating byinstrumented indentation and scratch testing - It providesaccess to various mechanical properties of small-volumesamples, such as thin films, but could be equally appliedto investigate bulk samples. Maximum load: 500 mN, load noise floor: 100 nN, maxindentation depth: 500 mm, displacement noise floor: 1nm, position accuracy: 1 mm
International projects: FP7 CATHERINE "CarbonnAnotube Technology for High-speed nExt-geneRationnano-InterconNEcts"- STREP- FET proactive (2008-2010),Coordinator Consorzio Sapienza Innovazione, Italy.Partners: CNIS-Italy, TUD-Netherlands, CIRIMAT-France,USL-Italy, ULV- Lativia, IMT- Bucharest- Romania, FOI-Sweden, INFN-Italy, PHILIPS- Netherlands, Smoltech-Sweden.IMT-Bucharest: contact person Phys. Adrian Dinescu-([email protected])
CATHERINE project aims to provide a new unconventionalconcept for local and chip-level interconnects that willbridge ICT beyond the limits of CMOS technology.
The main goals are: - To develop an innovative cost-effective and reliable technological solution for high-performance next-generation nanointerconnects.- To develop proof-of-concept nanointerconnects to assessand verify the new proposed solution.
Laboratory Head — Phys. Adrian Dinescu ([email protected])Laboratory Head — Phys. Adrian Dinescu ([email protected])
•Mission
•Main areas of expertise
•Research Team
•Specific facilities
•International Projects
Team from left to right: Adrian Dinescu, Cecilia Codreanu, Loredana Draghiciu,
Marian Popescu, Mihaela Marinescu, Raluca Gavrila,Alexandru Herghelegiu
IMTIMT-Bucharest Scientific R-Bucharest Scientific Report 2010eport 201040
NATIONAL PROJECTS
CATHERINE - Carbon nAnotube Technology for High-speed nExt-geneRation nano-InterconNEcts
CATHERINE project aims to provide a new unconventional concept for local and chip-level interconnects that will bridge ICT beyond the limits of CMOS technology.
The main goals of CATHERINE are: - To develop an innovative cost-effective and reliable technological solution for high-performance next-generation nanointerconnects.- To develop proof-of-concept nanointerconnects to assess and verify the newproposed solution.
Results: - A technological process to integrate alumina membrane (filled with CNTs)in a device has been developed. The process is based on laser ablation to cut the
membrane due to the thickness in the range of 60-80μm- A calibration kit for the EMmeasurements of the test vehicles wasfabricated; The test vehicles and the calibration kitpackaged are sent to Sapienza CNISand FOI for testing and measurements.
STREP- FET proactive ( 2008-2010),coordinator Consorzio SapienzaInnovazione, ItalyPartners: CNIS-Italy, TUD-Netherlands,
CIRIMAT-France, USL-Italy, ULV- Latvia, IMT- Bucharest- Romania,FOI- Sweden, INFN-Italy, PHILIPS- Netherlands, Smoltech- Sweden. IMT-Bucharest contact person: Phys. Adrian Dinescu([email protected])
FP7 PROJECT
ResultsResults
Laboratory for Micro- and Nanostructuring and CharacterizationLaboratory for Micro- and Nanostructuring and Characterization
Centre of Nanotechnologies
SEM image of the test vehiclefor the vertical CNTs based
interconnects
Image of alumina towerattached to the mounting
tip. The CPW structure canbe seen in the out of focus
region, under the tip.
The calibration kit and the patternedsubstrate for the test vehicle
Complementary characterization of surfaces by advanced SPM techniques
Main goals: Investigating the conceptual andpractical implementation issues associated withthe application of scanning probe microscopy-based techniques for complementarycharacterization of materials for micro andnanoelectronics.Results: • We have used Electrostatic ForceMicroscopy (EFM) modes in several applicativestudies to simultaneously gain insight intomorphological and electronic properties of variousthin film materials.• In particular, KPFM technique has beenapplied to directly visualize the photovoltaicactivity of an organic photovoltaic material (poly
3-hexylthiophene) - P3HT,thus allowing to acquirequantitative informationregarding the correlationbetween nanoscalearchitecture and function.• For assessing thefunctionality of EFM modes aspecial EFM testing structurewith different pitch sizes wasdesigned and fabricated usingEBL and lift-off procedures
Project Type: National basic funding Project CONVERT+, PN II (2009-2011); Project manager: Raluca Gavrila, [email protected]
Morphology (a), phase image (b) and surface potential (c) for a P3HTblend for photovoltaic applications. KPFM image (c) revealed the nanoscale
subsurface structure of the blend, masked by a oxidized and/oramorphous layer at the surface
KPFM images of a sample area (9 μm x 2.5 μm) of aP(3HT- co-3ATH) thin film recorded (a) in dark and (b)
under white light illumination. Fig (c) illustrates thephotovoltaic activity occurring in this polymer by thehistogram distributions of the surface potential in the
dark and under illumination.
EFM test structure with interdigitated finger electrodes -simultaneously acquired topography (a) and KPFM
images (b). For electrode pairs put to different bias,adjacent electrodes have the same height (a) but differ
in the surface potential (b).
IMTIMT-Bucharest Scientific R-Bucharest Scientific Report 2010eport 2010 41
Laboratory for Micro- and Nanostructuring and CharacterizationLaboratory for Micro- and Nanostructuring and Characterization
Centre of Nanotechnologies
ResultsResults
NATIONAL PROJECTSDevelopment of structuring technologies at the nano scale
Main goals: To develop and refine nano-structuring technologies based on Electron Beam Lithography patterning.Results: We have used the EBL technique to obtain nanostructures with high aspect ratio both in PMMA and SU8 electronresists.
Project Type: National basic funding Project CONVERT +, PN II - (2009-2011); Project manager: Adrian Dinescu – [email protected]
SEM micrographs of a high aspect ratio (12:1) PMMAstructures. a) sample 45 degree tilted b) top view
SEM micrographs of high aspect ratio (6:1) SU8 structures. a)lines with 1/3 fill factor b) pillars
Services offered by the Lab: AFM, SEM, EBL,
�� High resolution surface morphology investigations by AFM and SEM: 3D surface topography recording andmeasurement (waviness, roughness, step heights, grains, particles etc); 3D surface topography recording and measurement(waviness, roughness, step heights, grains, particles etc); Nanoscale morphology of PbS surface examined by SEM and AFM �� Mechanical characterization of thin films (Young’s Modulus, Hardness)
Contact Person: Phys. Raluca Gavrila, [email protected]
�� High resolution – low voltage FEG- SEM imaging �� Electron Beam Lithography patterning
Contact person: Dr. Adrian Dinescu – [email protected]
Iron oxide nanoparticlesHV=1kV, Mag= 300.000 X
Carbon nanotubesHV=1kV, Mag= 150.000 X
Suspended PMMA structuresfor photonic applications
3D patterning of PMMA 35K