Konstantin D. Stefanov Thesis : Radiation Damage Effects in CCD Sensors for Tracking Applications in...

8/6/2019 Konstantin D. Stefanov Thesis : Radiation Damage Effects in CCD Sensors for Tracking Applications in High Energy

1/110


2/110


3/110


4/110


5/110


6/110


7/110


8/110


9/110


10/110


11/110

Direction of transfer

P2 P3 P1 P2 P3P1 P1

PIXEL

P1 = Low

P2 = HighP3 = Low

Ionizing particle

Collected charge

P1 = Low

P2 = High

P3 = High

P1 = Low

P2 = Low

P3 = High

P1 = High

P2 = Low

P3 = High

Potential well

SiO2

Gate

p-type Si


12/110


13/110


14/110

Epitaxial layer (20 m)

+p

G

0 00 00 00 0

0 0

0 0

0 0

0 0

0 0

0 0

0 0

0 0

0 0

1 11 11 11 1

1 1

1 1

1 1

1 1

1 1

1 1

1 1

1 1

1 1

0 00 00 00 0

0 0

0 0

0 0

0 0

0 0

0 0

0 0

0 0

0 0

1 11 11 11 1

1 1

1 1

1 1

1 1

1 1

1 1

1 1

1 1

1 1

21 3 4 5

-4

0

4

8

12

16

p

Polysilicon gate

Device structure (not to scale)

SiO (100nm)2

p substrate (300 m)+

2Distance from Si-SiO interface ( m)

Oxide thickness

Po

ten

tia

l(V)

Buried channel

n-type buried channel (implant 0.8 m)

n

- 4 V

0 V

4 V

V = 8 V


15/110


16/110


17/110


18/110


19/110


20/110


21/110


22/110


23/110


24/110

Si Si

particle

SiV

A-centerSi

displacement damage

E-center

V

Divacancy

PV

V V

Sii

Oi


25/110


26/110


27/110


28/110

Direction of transfer

Pixel with defects


29/110


30/110


31/110


32/110

Drain

Output

Substrate

to FloatingDiffusion

Q1 Q2

Q3 Q4


33/110

NIM crate

PCItoVMEcard

VME crate

Master

Clock

CCD driverboard

Shutter

I/ORegister

ADC

Timer, synchronization,CCD pattern generator

and shutter control

Temperature controller

Cryostat

CCDFe-55source

PCI adaptor

PC (Linux)

CCD AnalogPower Supply

Oscilloscope


34/110


35/110

NIM clock

generator

Master clock

generator

Serial Data

Serial Clock

CCDStart

ADCClock

CCDClock

100 Hz (TTL)

12 MHz (TTL)

CCDStartClock

MasterCCDClock

Timer Module

TTL to NIMconvertor

NIM to TTLconvertor

Delay Line

30 ns

Pattern Generator

TTL to NIMconvertor

NIM to TTLconvertor

Clock

Start

D14

TTL to NIMconvertor

NIM to TTL

convertor

NIM to TTLconvertor

Delay 20msWidth 10us

Gated Generator

StartStopVeto

OutOut

Out

1

Delay 100nsWidth 10ms

Gated Generator

StartStopVeto

OutOut

Out

4

Delay OutWidth Latch

Gated Generator

StartStopVeto

OutOut

Out

3

VME I/O

Register

87654321

Fan In/Fan Out

In

In Out

Delay OutWidth 100ns

Gated Generator

StartStopVeto

OutOut

Out

2

NIM to TTLconvertor

NIM to TTLconvertor

NIM to TTLconvertor

to ADC Clock

to ADC Sync

Shutter Control

Open

Close

Mode

Out to Shutter

toCCDdriver

board

(AC coupled)

Pa

tternsequence

(TTL)

Ou

tpu

ts

6 MHz

1.5 MHz


36/110


37/110


38/110


39/110

10

102

103

104

3 4 5 6 7 8 9 10 11 12

Negative drive pulse voltage of the vertical register Vee

V (V)

Average

darkcurrentd

ens

ity

(elec

trons

/s/pix)

Before irradiation

1.7x1011

e/cm2

(13 krad)

8.5x1011

e/cm2

(65 krad)

1.7x1012

e/cm2

(130 krad)


40/110

1

10

102

103

104

3 4 5 6 7 8 9 10 11 12

Negative drive pulse voltage of the vertical register VeeV (V)

Average

darkcurren

tdens

ity

(elec

trons

/s/pix)

Before irradiation

1.7x1011

e/cm2

(13 krad)

8.5x1011

e/cm2

(65 krad)

June 2000

November 1998


41/110


42/110

5

6789

10

20

30

40

50

6070

8090

100

200

3 4 5 6 7 8 9 10


V(V)

Average

darkcurren

tdensity

(elec

trons

/s/pix)

8.9x109

neutrons/cm2

3.2x109

neutrons/cm2

1.1x109

neutrons/cm2

2.4x108

neutrons/cm2

Before irradiation


43/110

10-1

1

10

102

103

5 6 7 8 9 10 11 12


V (V)

Average

darkcurren

tdensity

(elec

trons

/s/pix)

Before irradiation

5.1x108

neutrons/cm2

2.0x109

neutrons/cm2

5.7x109

neutrons/cm2


44/110

1

10

102

103

104

105

-100 -80 -60 -40 -20 0 20

Temperature (oC)

Average

darkcurren

tdensity

(elec

trons

/s/pix)

Before irradiation

1.7x1011

e/cm2

(13 krad)

8.5x1011

e/cm2

(65 krad)

1.7x1012

e/cm2

(130 krad)

MPP mode

Normal mode

Minimum levelfor a reliable measurement


45/110


46/110

10

102

10 3

-100 -80 -60 -40 -20 0 20

Temperature (oC)

Average

DCPdensity

(elec

trons

/pixe

l)

1.7x1011

e/cm2

(13 krad)

8.5x1011

e/cm2

(65 krad)

1.7x1012

e/cm2

(130 krad)

0.002

0.02

0.2

2

Ho

leioniza

tionra

te(cm

-1)


47/110

0

250

500

750

1000

1250

1500

1750

2000

2250

2500

4 5 6 7 8 9 10 20 30

-100oC

-81oC

-64oC

-44oC

-26oC

-17oC

Vertical shift pulse width (s)

Average

DCPden

sity

(elec

trons

/pixe

l)


48/110

0

50

100

150

200

250

300

6.5 7 7.5 8 8.5 9 9.5 10 10.5 11 11.5


V (V)

Average

DC

Pdens

ity

(e-/p

ix)

8 s

16 s

Pulse width (a)

0

25

50

75

100

125

150

175

200

2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5

8 s

16 s

Pulse width (b)

Positive drive pulse voltage Vcc

(V)

Average

DCP

dens

ity

(e-/p

ix)


49/110

E

E

ba

c

V = Vcc V = Vee

c

v

V = Vcc V = Vee

p channel stop+

p channel stop+


50/110

1

10

102

103

104

105

0 500 1000 1500 2000

Coun

ts

1

10

102

103

104

105

-200 0 200

1

10

102

103

104

105

0 500 1000 1500 2000

Coun

ts

1

10

102

103

104

105

-200 0 200

1

10

102

103

104

10

5

0 500 1000 1500 2000

ADC channels

Cou

nts

1

10

102

103

104

10

5

-200 0 200

ADC channels

before irradiation

(a)

Raw data Subtracted dark frame

(b)

1.7x1011

electrons/cm2

(c) (d)

2.4x108 neutrons/cm2

(e)

hot pixels

ADC overflow

hot pixelshot pixels

(f)


51/110

1

10

102

103

104

105

0 500 1000 1500 2000

Coun

ts

1

10

102

103

104

105

0 500 1000 1500 2000

1

10

102

103

104

105

0 500 1000 1500 2000

ADC channels

Coun

ts

ADC channels

1

10

102

103

104

105

0 500 1000 1500 2000

ADC channels

-17oC -8

oC

+1oC +10

oC


52/110

0

500

1000

1500

2000

2500

3000

3500

4000

4500

0.4 0.45 0.5 0.55 0.6 0.65 0.7

Activation energy (eV)

Ho

tp

ixe

ldarkcurren

t(elec

trons

/s)


53/110


54/110

0

2000

4000

6000

8000

10000

12000

14000

0 10 20 30 40 50 60

A

B

CD

EF

Time (min)

Pixe

lcurren

t(elec

trons

/s)


55/110

0

500

1000

1500

2000

2500

3000

3500

4000

0 10 20 30 40 50 60

G

H

I

J

KL

Time (min)

Pixe

lcurren

t(elec

trons

/s)


56/110

0

1000

2000

3000

4000

5000

6000

0 20 40 60 80 100 120

-33.2oC

-24.4oC

-15.2oC

-6.0oC

3.1oC

Time (min)

Pixe

lcurren

t(elec

trons

/s)


57/110

10-5

10-4

10-3

10-2

10

-1

1

-30 -25 -20 -15 -10 -5 0 5 10

ti= 2.0 s

ti = 1.0 s

ti= 0.5 s

ti = 0.25 s

Temperature (oC)

Fa

lse

IPEs

igna

ls(%/frame

)


58/110

10-3

10-2

10-1

1

10

-35 -30 -25 -20 -15 -10 -5 0 5 10

Temperature (oC)

Ho

tp

ixe

ls(%)

ti= 2.0 s

ti = 1.0 s

ti= 0.5 s

ti= 0.25 s


59/110


60/110


61/110


62/110

A B C D

P1

P2

P2P2 P1 P1

A

B

C

D

one pixel

Signal + Dark charge

Dark charge

wt

H


63/110


64/110

A B C D

P2P2 P1 P1


Dark charge

P1

P2

wt

V

E

one pixel

A

B

C

D

E

Horizontal

shift


65/110

0

20

40

60

80

100

120

140

160

-120 -100 -80 -60 -40 -20 0 20 40

Temperature (oC)

CTI(x10-5)

0 e-

10 e-

100 e-

1000 e-

VCTI

HCTI

Fat zero


66/110

0

10

20

30

40

50

60

70

80

-120 -100 -80 -60 -40 -20 0 20 40

Temperature (oC)

VCT

I(x10-5)

Fat zero

0 e-

10 e-

100 e-

Phase 1

Phase 2


67/110


68/110

P2 P3 P1 P2 P3P1 P1

PIXEL

P1

P2

P3

A B C D E F

A

B

C

D

E

F


Dark charge

G

G

tH

w

t wmin


69/110


70/110

P2 P3 P1 P2 P3P1 P1

PIXEL

P1

P2

P3

A B C D E F

A

B

D

E

F


Dark charge

C

G

GHorizontal

shiftt wV

t wmin


71/110


72/110

0

50

100

150

200

250

300

-120 -100 -80 -60 -40 -20 0 20

Temperature (oC)

CTI(x10-5)

0 e-

10 e-

100 e-

1000 e-

Fat zeroVCTI

HCTI


73/110

0

20

40

60

80

100

-120 -100 -80 -60 -40 -20 0 20

Temperature (oC)

VCTI(x10-5)

0 e-

10 e-

100 e-

Fat zero Phase 1

Phase 2

Phase 3


74/110


75/110

0

20

40

60

80

100

120

140

-100 -80 -60 -40 -20 0 20

Temperature (o

C)

CTI(x10-5)

8.5x1011

e-/cm

-2

1.7x1011

e-/cm

-2

before irradiation

VCTI HCTI


76/110


77/110

0

10

20

30

40

50

60

-100 -80 -60 -40 -20 0 20

Temperature (oC)

CTI(x10-5)

8.9x109

neutrons/cm2

3.2x109 neutrons/cm2

before irradiation

VCTI HCTI


78/110


79/110

0

100

200

300

400

500

600

700

800

-120 -100 -80 -60 -40 -20 0 20

Temperature (oC)

CTI(x10-5)

VCTI HCTI

8.5x1011

e/cm2


80/110

0

10

20

30

40

50

-100 -80 -60 -40 -20 0 20

Temperature (oC)

CTI(x10-5)

Before irradiation

2.0x109

neutrons/cm2

5.7x109

neutrons/cm2

VCTI HCTI


81/110

0

100

200

300

400

500

600

-100 -80 -60 -40 -20 0 20

Temperature (oC)

CTI(x10-5)

Before annealing

After annealing

VCTI

HCTI


82/110


83/110


84/110


85/110

0

1000

2000

3000

4000

5000

-120 -100 -80 -60 -40 -20 0 20

Temperature (oC)

CTI(x10-5)

VCTI

HCTI

0.25 Mpix/s

1.0 Mpix/s

5.0 Mpix/s

10.0 Mpix/s

20.0 Mpix/s


86/110

0

0.2

0.4

0.6

0.8

1

10-6

10-5

10-4

10-3

10-2

Time (s)

Trap

Occupa

tion

Isolated charge

Emission

-60oC

-40oC

-20

o

C

0oC


87/110

P2P2 P1 P1


Dark charge

P1

P2

wt

V

PIXEL

A

C

D

E

Horizontalshift

A B C D E F

B

F

Additionalpulse

Additionalpulse


88/110

0

50

100

150

200

250

300

350

400

-100 -80 -60 -40 -20 0 20

Temperature (oC)

VCTI(x10-5)

P1-P2 Clock

P2-P1-P2 Clock

Phase P1 only


89/110

0

20

40

60

80

100

120

-100 -80 -60 -40 -20 0 20

Temperature (oC)

VCTI(x10-5)

P1-P2: 4 s

P1-P2: 8 s

P2-P1-P2: 8 s

P1-P2: 16 s

Vertical shift pulse


90/110

Oxide

Gate

Buried channel

Gate

Chargepacket

Potential profile in the channel

Standard CCD Notch CCD

Additional implant

Radiation-induceddefects


91/110

0

20

40

60

80

100

120

140

160

-100 -80 -60 -40 -20 0 20

Temperature (oC)

Vert

ica

lCTI(x10-5)

Before irradiation

1.7x1011

e/cm2

(13 krad)

8.5x1011

e/cm2

(65 krad)

Standard CCD

Notch CCD


92/110

PIXEL

1/4 volume

1/3 volume

2/3 volume

PIXEL

2-phase CCD 3-phase CCDP1 P2 P3P1P2 P2 P1 P1 P2 P3


93/110

0

100

200

300

400

500

600

-100 -80 -60 -40 -20 0 20

Temperature (oC)

CTI(x10-5)

CCD02-06

S5466

VCTI

HCTI


94/110


95/110

1

10

102

103

104

3 4 5 6 7 8 9 10 11 12

Vertical Register Bias in Integration Vee(V)

D

ark

Curren

t(elec

trons

/s/pix)

MPP modeInterface dark current

Voltage setting

0

100

200

300

400

500

600

700

800

1 10 102

103

Dark charge (electrons)

CTI(x10-5)

-25.1oC

-15.7oC

-6.3oC

3.2oC

15.6oC

VCTI

HCTI


96/110

1/2 LM358

2SC2238

2SA968

-12 V

Output toVee

MUX

Y

X1

X2

A

V mppV test

NIM to TTLlevel convertor

from GG4

-12 V


97/110

0

100

200

300

400

500

600

700

1 10 102

103

Fat zero (electrons)

VCTI(

x10-5)

Data at -16oC

P1 + P2 + P3

P1

P2

P3

Not corrected

Corrected


98/110


99/110

0

25

50

75

100

125

150

175

200

225

250

0 0.002 0.004 0.006 0.008 0.01 0.012 0.014

Pixel occupation (X-rays/pixel/frame)

CTI(x10-5)

Vertical CTI

Horizontal CTI


100/110


101/110

2000 horizontal pixels

250 vertical

pixels

Outputs

80-96 mm

10-1

2mm


102/110


103/110


104/110


105/110


106/110


107/110


108/110


109/110


110/110

Konstantin D. Stefanov Thesis : Radiation Damage Effects in CCD Sensors for Tracking Applications in...

Documents

Transcript of Konstantin D. Stefanov Thesis : Radiation Damage Effects in CCD Sensors for Tracking Applications in...