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High-Resolution RBS System (HRBS-V500HRBS1000) KOBE STEEL, LTD Machinery & Engineering Company Advanced Product & Technologies Dept.

Outline History for RBS Equipment Hardware of HRBS-V500 Principle of RBS Principle of High-Resolution RBS Examples of High-Resolution RBS Principle & Examples of High-Resolution ERDA Principle of PIXE Comparison of instrumentation

History for RBS Equipment

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Hardware of HRBS-V500

Principle of RBS10000 1000

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Si

Si

He+

Yield

100 10 1 0 100 200 300 400 500+ Si Au He

Sample1

channel10000 1000

Au

Si

Yield

100 10 1 0 100 200 300 400 500

Sample2

channel10000 1000

Au Si Au Si

Si

He+

Yield

100 10 1 0 100 200 300 400 500

Sample3

channel

Principle of High-Resolution RBS (Spectrometer)Curving Boundary

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Diversion Magnet

1.2E0 0.86E0

Scattered Ion SSD

SLITLow Energy Ion

26. 6Scattered Ion

R1

Scattered Ion Sample

Position Detector (MCP+PSD)

50m m

Spacial resolution 0.5mm

Double Focusing

Comparison of Spectrometer between conventional RBS and HRBS

Energy Range of HRBS Spectrometer

E x x =2 = E Dp 2 R E 0.15% E

Magnetic SpectrometerHigher Energy Resolution

0.86E0

100 mm

Incident Beam

High Energy Ion

E0 1.2E0

Conventional RBS

High-Resolution RBS

1 dimensional Position Detector (MCP + PSD)

Analysis Example 1 for HRBS SiON450keV,He Ion Si-sub 2nm SiON

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Si Si O O N

N

HRBS spectrum of SiON

Depth Profile of SiON

Analysis Example 2 for HRBS High-K

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SolidLine : Before Dot Line : After

Si O

Comparison of HRBS Spectra between before and after AnnelaingHf

3

Comparison of Depth Profile between before and after Annelaing

Analysis Example 3 for HRBS MRAMTa NiFe CoFe Al2O3 CoFe Ru CoFe PtMn NiFe Ta

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1014

Measurement Precision 1.9 % (0. 3)

711

HRBS Measurement (nm)

TEM Picture

SiN/SiO2

AlO Thickness (nm)Measurement Precision 4.7 % (0.5)

Ta Al Ru Ta

Result of Measurement Precision2004 Spring Applied Physics 30a-ZY-4

Ru Thickness (nm)

HRBS Spectrum of MRAM

Analysis Example 4 for HRBS : SGOI StrainStrained Si Relaxed SiGe BOX(SiO2) Si-sub(100)SGOI- 57.3 - 52.1 - 53.7 - 54.7 Si & Ge in SiGe - 55.7 Strained Si SiGe DIP Area Surface O Strained Si DIP Area - 52.1 - 53.7 - 54.7 - 55.7 - 57.3

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Ge in SiGe

Counts for Strained Si for SiGe 0.15

HRBS Spectra for SGOI DIP Posision for Strained Si shifted to 0.15 larger side from DIP Position for SiGe. This means that the lattic constant of Strained Si is shallower than SiGe.

Incident Angle[ ]

SGOIDIP Curve

Principle of ERDA(Elastic Recoil Detection Analysis)

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H H

Sample SurfaceHe+ N+

H H

H

He Ion or N Ion

H

AbsorberConventional ERDA : Mylar Film HERDA : Double Focusing Magnet

Scattered He or N IonHe+ N+ H

DetectorConventional ERDA : SSD HERDA : MCP+PSD

Comparison between conventional ERDA & HERDAComparison by DLC(Diamond like Carbon) spectrum between conventional ERDA & HERDA

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1MeV He+ DLC mikro-i

500keV N+ DLC HRBS500

Conventional ERDA

High Resolution ERDADepth resolution < 0.2nm

Hydrogen depth profile in thin film was CLEARLY measured!!

Analysis Example 1 for HERDA : DLCSamples 3 samples were prepared. Each sample was manufactured in different methane partial pressure.- No.3H C

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No.1 Depth Profile

C

No.2 Depth Profile

- No.2 - No.1

H

C No.3 Depth Profile H

Comparison of HERDA Spectra among 3 samples

Analysis Example 2 for HERDA : Low-K480keV, N Ion Si substrate Low-K

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Surface Peak O H H C Si

HERDA Spectrum of Low-K

Depth Profile of Low-K

Principle of PIXE(Particle Induced X-ray Emission)When Ion collides with atom, it radiates charasteristic X-ray which is unique in each element. By detecting this X-ray, it turns out what elements and how many elements are included. The feature of PIXE is high detection sensivity which is about ppm order.L-Xray K-Xray M L K L K K L M L L K

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Ion Electron M

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Comparison of instrumentation(evaluation of thin film)

PrincipleMethod /Feature Probe Detection Particlenon-destructive

RBSHRBS 500 Old RBS Double Semiconduc focussing tor magnet&MCP detector 500keV He 1Mev He Scattered ion 0.20.3nm 1% Attention is needed for surface treatment

SIMS

AES

TEMCross Section

STMScanning Tunnel electron needle Tunnel current Few %

XRRX Ray Reflection High Power X Ray X 210nm Few % Attention is needed for surface treatment

Cs/O ion Secondary ion 5nm 0.0001%

electron Auger electron 2nm 0.50% Charge up measure is needed

electron Transmission electron 0.01nm Few % Preparation of sample is needed

10nm 0.50%

Depth resolution Composition Sensitivity Reliability User-friendly Simplicity of use

Sensivity adjustment is needed