Klystron Modulator R&D at KEK

Blumlein Modulator R&D Status

l Modulator modification(Pulse flat-top width to >l.$s)_--_.-_ .- .._- Two parallel Blumlein PFks -_’ -- ‘-

_ .-.. ._~ . .._ -- .-,-..._... 1

- ModificationPulse transformer( 1: 8)Charging transformer

l Modulator test . . _- Pulse width : 3~s- Rise time l -6OOns( lo-90%).- Fall time l -700ns( lo-90%).- Flat-top width : 2jAs(p-p 3%)- Efficiency

Pulse power transfer Eff. : ~75%Waveform Eff. l w74%.

Blumlein Modulator #l(in Air)

Main Parameters

KlystronOutput powerRF pulse widthEficiencyPerveanceBeam voltageRepetition rate

ModultorSec. voltage(Max)Sec. current(Max.)Sec. impedancePulse widthFlat-top widthRise time

Pulse TransformetStep-up ratio

Blumlein PFNPFN impedance/lineNo. of s&tionsInductance/sectionCapacitance/sectionTotal capacitanceCharging Voltage

Tlwra tronAnode voltageAnode current

unit

MW 127 127PS 0.4 1.5% 45 45

~LAIV”~ 1.2 1.2kV 560 560PPS 50 50

kV 560 560A 503 503i2 1113 111311s 0.8 2.411s 0.4 1.511s 350 400

1% 1:8

IR

PHnFnFkV

8.7 17.4(2par.)13 20(2par.)

0.265 1.063.5 3.591 28070 70

kV 70 70kA 8 8

Design Upgrade

UOJJSAl>(

JaUJJO)SUE!Jl

aV’d

--

?>+-

--

l!nDJ!zBu!Q-ap

NJd u!al’JJnlElJaUJJO4SUeJl

6U!6JL’Lj~

AlddnsJ=‘od AH

iii

Kly

stro

n v

olt

ag

eK

lyst

ron

curr

ent(A

)

-I-

Out

put v

olt

age

I I

I I

LL

L-i-

I I

I I

I I

I I

I I

I I

I 1

I I

I I

I I

I I

/

c

LX Z'P 8'P 9'S 9'9 8'L 9.6 9'TT L'PT 2'61 a3u'PadwINdd

(VI)S'8 0'8 P'L 6'9 P'9 8'S E'S 8'P 73 L-E JuaJJn3

apow

E9 L9 IL LL a16 001 ITI SZI EPT

91STPT'i121TT0168L

3

P cn w WI w

R&D Program

l Components R&D- Solid state switches- Energy storage capacitors- Pulse transformer

l Modulator Analvsis- Efficiencv- PFN design

l Modulator Layout- Size- Components arrangement

Solid State SI-Thyristor(under development)

l High on current (Peak current of >lOkA?)

l High hold-off voltage (5kV)

l Fast Turn on and Turn off (di/dt of > SOkA/ps?)

l Low switching losses(?)

-.

iii

PULSED POWER DEVICES

High Power Fast STATIC INDUCTION THYRISTOR

Featuresl.Very small turn-on delay time2. Optimized for series connection3.Snubberless operation4.Optimized for low gate impedance and on-gate drive5.Very high EM1 immunity6.Low on-state and switching losses7.Available for high repetition rate operation&Reverse conducting type (including freewheeling diode: SIED) ‘.S.Press-pack ceramic housinglO.High reliability

NGK INSULATOR,LTD.,2-56 Suda-cho,Mizuho-ku,Nagoya,467-8530 JapanTel:+81-52-872-7097, Fax:+Bl-52-872-7499, E-mail : nshimizu@ngk.co.jp

Performanc_

Item

V D R M

Vdc(max)Itsmdi/dt

nib=>Frequency

FmWeight

Rthjf SIThyRthjf SIED

PULSED POWER DEVICES

pizq.

of Key Parameters ’Q-w

RS1600PA40Tl

4ooov0.85VDRM

3okAl75 lLs~55kALuS

125°CRepetitiveCooling for repetitiveswitching is required

3okN0.73kg

&025”c/Wo.o35”c/w

2 center holesQ 3.2kO.151.5&0.2 deep

4 6OkO.2I I

RS 1600PA55Tl

5500v0.85vDRM

3okfU75 ,usL68kAlll s

125°CRepetitive

Cooling for repetitiveswitching is required

3okN0.73kg

O.O25=‘C/W0.035”c /w

G

!FA

Symbol

Hk

G

A = Anode

K = Cathode

G = Gate

I $J 92 max1

Hk = Auxiliary Cathode

Dimensions in mm

NGK INSULATORS, LTD.

> tP+ iA p+IO -Y-

Gate

@ G. t n

t3+

Doplotionlayer

I I I I -----uIg

I

r.

1r*

I-

2

t

Ano

de c

urr

en

tA

node

volt

age

IPo

wer

loss

es(M

W)

.G

cln

0

VIG

clIv

g

VIb in

?

I I

I

0 P

Ano

de v

olta

ge(

kV)

Ano

de c

urre

nt( k

A)

current probe ,insulator

return conductorGND electrode

fHV electrode SI thyristor

Fig.1 The schematic view of the testing circuit.

11 ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ‘I

c38nF

Fig.2 The equivalent circuit ofthe testing apparatus.

11 ’ 1 1 ’ ’ 1 ’ ’ ” “I4 t A 12

0l-----JAM

-2 - VI I I I I I I I I I I I I

Fig.3 Typical experimental result.

II

I

uogamdo 33o-ulrn$ pm uo-um$ ~a3 ~03 ava a;InJnd

-.

SH-type capacitor for PFNKEK&Nichicon Corporation

Energy Density (D)

D w=LE2q-- - [J/d]v 2

W :Stored Energy(J)V :Case Volume(m3)& :Dielectric constant(F/m)

E=EoEr,Eo=8.84xl o-l2F/mE :Electric field strength(V/m)

r\ :Packing factor

NH-type: E-6OV/pm, D-9kJ/m3

SH-type: E-13OV/pm, D-19kJ/m3

Schedule:

l)Life test under operation

2)Low inductance and more compact sizeNo bushing capacitor with plastic case

JLC-ATF -

Ele

ctric

Stre

ss(V

/pm

+8

l

! t.

.- :.

....

:.

.f

.:..

..:.

....

....

.

i

-I CA -A

00

Capacitor construction

(1) No-Healing(NH)-typeAI-foiL7pm

I I - Condenser Paper~\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\‘i +- Polypropyle1 . I 8

film (pp)

(2) Self-Healing(SH)-typeptQ$&p4 4;lm

JZn 300;

JPolyet

$lene terephtalate (PET)

b PP film

JLC-ATF -