ITALIAN AND GERMAN UNIFICATION 1852-1871. ITALIAN UNIFICATION PROCESS.
Keynote Toward technology unification€¦ · Keynote Toward technology unification Vincent Launois...
13
Keynote Toward technology unification Vincent Launois Market Development Manager - EMEA Semiconductor Device Modeling Seminars – Fall 2014
Transcript of Keynote Toward technology unification€¦ · Keynote Toward technology unification Vincent Launois...
KeynoteToward technology unification
Vincent Launois
Market Development Manager -
EMEA
Semiconductor Device Modeling
Seminars – Fall 2014
Page
17-Sep-14
Appliance
Power Devices
3 examples in housing & transport
Semiconductor
Device
Characterization
2
Fly by wire Electrical plane Electrical / Hybrid Vehicle
– Laws on Energy reduction
– 30%-50% savings with
Inverter
– Weight gain
– Reliable Digital control
– Electrical Plane Prototype
– Power Module is 40% of
Electrical Train
Demand in energy market
Page
17-Sep-14
Power devices
Voltage & Power range Ron comparison
Semiconductor
Device
Characterization
3
1
10
100
1000
10000
10 100 1000 10000
Am
pere
Voltage
Si
GaN
SiCSi
SiC
GaN
Si & Wide Band Gap (III-V) Technology choices
Source: GaN-based power devices offer game-changing potential in power-conversion
electronics electronicswww.eetimes.com/document.asp?doc_id=1272514
Page
17-Sep-14
Power Devices
DC/AC inverters are everywhere
Si IGBT / SiC MOSFET / GaN HEMT
– New GaN/SiC main advantages:
• conduction losses (-50%)
• switches losses
Batteries
– Battery test
– Li Ion technology
– Fast charge
Semiconductor
Device
Characterization
4
Technical Challenges
DC in
Out
Page
17-Sep-14
Backlight Screen
Power Devices
Semiconductor
Device
Characterization
5
Lighting Automotive
– LED replaced CCFL – Energy savings
– 50% Efficiency to be
improved
– LED headlight
– Dashboard backlights
LED applications
Page
17-Sep-14
Wireless & Consumer
– Higher network density
– Higher data rate
– “Green”
Semiconductor
Device
Characterization
6
Staying Connected
Page
17-Sep-14
Wireless & Consumer
Semiconductor
Device
Characterization
7
Si & Wide Band Gap (III-V) Technology choices
GaN
Si
SiC
Source: http://www.ee.saga-u.ac.jp/pelab/topics.html
Page
17-Sep-14
Wireless & Consumer
Semiconductor
Device
Characterization
8
PA RF Efficiency for both CMOS, AsGa/GaN
Page
17-Sep-14
Wireless & Consumer
Sensors are driving IoT expansion
–Nothing already defined
–Sensor + Tx :
Memory, Energy harvesting,
Connectivity
–Multi physics
• NO2 detector
• Water your plants
• ….
Semiconductor
Device
Characterization
9
Internet of Things & Cloud
Page
17-Sep-14
Hybrid Memory Cube (HMC)
Wireless & Consumer
Dedicated technology per application
Semiconductor
Device
Characterization
10
MultiMedia Card (eMMC) Magnetic RAM (MRAM)
– High Density
– High Bandwith
– Reduced power
– Embedded in mobile,
automotive, consumer
products
– Low Power
– Spin Torque MRAM
• Non volatile
• Fast
• Unlimited cycling
– Ultra Low Power
Non volatile Data Storage
Page
17-Sep-14
FD-SOI
Wireless & Consumer
What solution below 10nm ?
Speed/Consumption grail in a ‘More than Moore’ world
Semiconductor
Device
Characterization
11
FinFET Tunnel FET
– 2D device
– Fully depleted channel for
improved electrostatic
– 3D Device
– III-V/Ge for <10nm
– Going beyond 7nm
Reaching the Silicon Limits
Page
17-Sep-14
Wireless & Consumer
Wearable devices
Flexible substrate & screen
Carbone Nanotube
Semiconductor
Device
Characterization
12
Graphene Transistor
Thin Film Battery
Technology breakthrough with new material
Page
17-Sep-14
IoT & appliance
Merging Power & beyond-Si devices
Silicon & III-V technologies are merging
Semiconductor
Device
Characterization
13
EV / Connected Cars Photonics
– Energy savings are
consumed by new demands
– Investing AlGaN and GaN
on Si for affordable and
reliable GaN performance
– High Data Rate exchanges
