Jianhua (Joshua) Yang - UMass Amherst · Jianhua (Joshua) Yang Department of Electrical and...

Jianhua (Joshua) Yang

Department of Electrical and Computer Engineering

University of Massachusetts, Amherst

201G Marcus Hall, 100 Natural Resources Rd

Amherst MA 01003-9292

e-mail: [email protected]

Tel: 413-5454514

http://www.ecs.umass.edu/ece/jjyang/

Employment Experience:

Professor, 2015-

The Department of Electrical and Computer Engineering

University of Massachusetts, Amherst

Principal Researcher, 2012-2015

Responsibility: Leading the materials and device team

Senior Researcher, Researcher, Research Associate (post-doctoral), 2007-2012

Hewlett-Packard Labs, Palo Alto, CA

Education:

Ph. D., M.S., Materials Science Program (multidisciplinary program with ECE,

MSE, ME, Physics, Chemistry and Biology) 2007

University of Wisconsin – Madison

Advisor: Y. Austin Chang (Deceased, member of National Academy of Engineering)

Thesis: Engineering and Characterizing Nanoscale Multilayers for Magnetic Tunnel

Junctions (MTJs)

B.S. Mechanical Engineering, 1997

Southeast University, Nanjing, China

40 Selected publications:

(*corresponding author; full list: https://scholar.google.com/citations?user=9Oaf_cUAAAAJ&hl=en)

1. Z. Wang, H. Wu, G. Burr, C. S. Hwang, K. L. Wang, Q. Xia* and J. Joshua Yang*,

“Resistive switching materials for information processing”, NATURE REVIEW

MATERIALS, in press (2019, invited review).

2. M. Rao, Z. Wang, C. Li, H. Jiang, R. Midya, P. Lin, D. Belkin, W. Song, S. Asapu, Q.

Xia, and J. Joshua Yang*, “Learning with Resistive Switching Neural Networks”, IEDM

Accepted, (2019, invited paper).

3. X. Zhang, Z. Wang, W. Song, R. Midya, Y. Zhuo, R.Wang, M. Rao, Q. Xia, J. Joshua

Yang*, Qi Liu*, and M. Liu*, “Experimental Demonstration of Conversion-based SNNs

with 1T1R Mott Neurons for Neuromorphic Inference”, IEDM Accepted, (2019).

4. J. Tang, F. Yuan, X. Shen, Z.Wang, M. Rao, Y. He, Y. Sun, X. Li, W. Zhang, Y. Li, B.

Gao, H. Qian, G. Bi, S. Song, J. Joshua Yang*, H. Wu*, “Bridging Biological and

Artificial Neural Networks with Emerging Neuromorphic Devices: Fundamentals,

Progress, and Challenges”, ADVANCED MATERIALS,

https://doi.org/10.1002/adma.201902761 , (2019, invited review).

5. Z. Wang, C. Li, P. Lin, M. Rao, Y. Nie, W. Song, Q. Qiu, Y. Li, P. Yan, J. P. Strachan, N.

Ge, N. McDonald, Q. Wu, M. Hu, H. Wu, R. S.Williams, Q. Xia*, J. Joshua Yang*, “In

mailto:[email protected]

http://www.ecs.umass.edu/ece/jjyang/

https://scholar.google.com/citations?user=9Oaf_cUAAAAJ&hl=en)

https://doi.org/10.1002/adma.201902761

2

situ training of feedforward and recurrent convolutional memristor networks”, NATURE

MACHINE INTELLIGENCE 1, 434 – 442 (2019).

6. W. Chen, C. Dou, K. Li, W. Lin, P. Li, J. Huang, W. Wei, J. Wang, C. Xue, Y. Chiu, Y.

King, C. Lin, R. Liu, C. Hsieh, K. Tang, J. Joshua Yang, M. Ho, and M. Chang, "CMOS-

integrated memristive non-volatile computing-in-memory for AI edge processors",

NATURE ELECTRONICS 2, 420 – 428 (2019).

7. R. Midya, Z. Wang, S. Asapu, X. Zhang, M. Rao, W. Song, Y. Zhuo, N. Upadhyay, Q.

Xia*, and J. Joshua Yang*, “Reservoir Computing using Diffusive Memristors”,

ADVANCED INTELLIGENT SYSTEMS, https://doi.org/10.1002/aisy.201900084 (2019,

invited paper)

8. Q. Xia* and J. Joshua Yang*, “Memristive crossbar arrays for bio-inspired computing”,

NATURE MATERIALS 18, 309-323 (2019, invited review).

9. Z. Wang, C. Li, W. Song, M. Rao, D. Belkin, Y. Li, P. Yan, H. Jiang, P. Lin, M. Hu, J. P.

Strachan, N. Ge, M. Barnell, Q. Wu, A. G. Barto, Q. Qiu, R. S. Williams, Q. Xia, and J.

Joshua Yang*, “Reinforcement learning with analogue memristor arrays”, NATURE

ELECTRONICS 2, 115-124 (2019).

10. C. Li, Z. Wang, M. Rao, D. Belkin, W. Song, H. Jiang, Y. Li, P. Lin, M. Hu, N. Ge, J. P.

Strachan, M. Barnell, Q. Wu, R. S. Williams, J. Joshua Yang*, and Q. Xia*, “Long short-

term memory networks in memristor crossbars”, NATURE MACHINE INTELLIGENCE 1,

49-57 (2019).

11. W. Sun, B. Gao, M. Chi, Q. Xia*, J. Joshua Yang*, H. Qian, H. Wu*, “Understanding

memristive switching via in-situ characterizations and device modeling”, NATURE

COMMUNICATIONS 10, 3453 (2019).

12. E. J Fuller, S. T Keene, A. Melianas, Z. Wang, S. Agarwal, Y. Li, Y. Tuchman, C. D.

James, M. J. Marinella, J Joshua Yang, A. Salleo*, A A. Talin*, “Parallel programming

of an ionic floating-gate memory array for scalable neuromorphic computing”, SCIENCE

364, 570-574 (2019).

13. J. H. Yoon, Z. Wang, K. M. Kim, H. Wu, V. Ravichandran, Q. Xia*, C. S. Hwang and J.

Joshua Yang*, “An Artificial Nociceptor Based on a Diffusive Memristor”, NATURE


14. Z. Wang, S. Joshi, S. Savel’ev, W. Song, R. Midya, Y. Li, M. Rao, P. Yan, S. Asapu, Y.

Zhuo, H. Jiang, P. Lin, C. Li, J. H.. Yoon, N. K. Upadhyay, J. Zhang, M. Hu, J. P.

Strachan, M. Barnell, Q. Wu, H. Wu, R. Stanley Williams*, Q. Xia*, and J. Joshua

Yang*, “Fully memristive neural networks for pattern classification with unsupervised

learning”, NATURE ELECTRONICS 1, 137-145 (2018).

15. Z. Wang, M. Rao, J.-W. Han, J. Zhang, P. Lin, Y. Li, C. Li, W. Song, S. Asapu, R. Midya,

Y. Zhuo, H. Jiang, J. H. Yoon, N. K. Upadhyay, S. Joshi, M. Hu, J. P. Strachan, M.

Barnell, Q. Wu, H. Wu, Q. Qiu, R. S. Williams, Q. Xia*, and J. Joshua Yang*,

“Capacitive neural network with neuro-transistors”, NATURE COMMUNICATIONS 9

3208 (2018).

16. C. Li, M. Hu, Y. Li, H. Jiang, N. Ge, E. Montgomery, Z. Li, J. P. Strachan*, P. Lin, W.

Song, Z. Wang, M. Barnell, Q. Wu, R. S. Williams, J. Joshua Yang*, Q. Xia*, “Analogue

signal and image processing with large memristor crossbars”, NATURE

ELECTRONICS 1, 52-59 (2018).

17. C. Li, D. Belkin, Y. Li, P. Yan, M. Hu, N. Ge, H. Jiang, E. Montgomery, P. Lin, Z. Wang,

J. P. Strachan, M. Barnell, Q. Wu, R. S. Williams, J. Joshua Yang*, and Q. Xia*,

“Efficient and self-adaptive in-situ learning in multilayer memristive neural networks”,

NATURE COMMUNICATIONS 9, 2385 (2018).

https://doi.org/10.1002/aisy.201900084

3

18. M. Wang, S. Cai, C. Pan, C. Wang, X. Lian, K. Xu, Y. Zhuo, J. Joshua Yang*, P.

Wang*, F. Miao*, “Robust memristors based on layered two-dimensional materials”,

NATURE ELECTRONICS 1, 130-136 (2018).

19. H. Jiang, C. Li, R. Zhang, P. Yan, P. Lin, Y. Li, J. Joshua Yang*, D. Holcomb*, and Q.

Xia*, “Provable Key Destruction with Large Memristor Crossbars”, NATURE

ELECTRONICS 1, 548-554 (2018).

20. Z. Wang, S. Joshi, S. E. Savel’ev, H. Jiang, R. Midya, P. Lin, M. Hu, N. Ge, J. P.

Strachan, Z. Li, Q. Wu, M. Barnell, G-L Li, H. L. Xin, R. S. Williams, Q. Xia, and J.

Joshua Yang*, “Memristors with diffusive dynamics as synaptic emulators for

neuromorphic computing”, NATURE MATERIALS 16, 101-108 (2017).

21. S. Pi, C. Li, H. Jiang, W. Xia, H. Xin, J. Joshua Yang, and Q. Xia*, “Memristor crossbar

arrays with 6-nm half-pitch and 2-nm critical dimension”, NATURE

NANOTECHNOLOGY 14, 35-39 (2019).

22. M. Hu, C. E. Graves, C. Li, Y. Li, N. Ge, E. Montgomery, N. Davila, H. Jiang, R. S.

Williams, J. Joshua Yang*, Qiangfei Xia*, and John Paul Strachan*, "Memristor-based

analog computation and neural network classification with a dot product

engine”, ADVANCED MATERIALS 29, 1705914 (2018).

23. Z. Wang, M. Rao, R. Midya, S. Joshi, H. Jiang, P. Lin, W. Song, S. Asapu, Y. Zhuo, C.

Li, H. Wu*, Q. Xia*, and J. Joshua Yang*, “Threshold Switching of Ag or Cu in

dielectrics: Materials, Mechanism, and Applications”, ADVANCED FUNCTIONAL

MATERIALS 28, 1704862 (invited feature article, 2018).

24. J. Joshua Yang* and Q. Xia*, “Battery-like artificial synapses”, NATURE MATERIALS

16, 396-397 (2017). (News & Views)

25. R. Midya, Z. Wang, J. Zhang, C. Li, S. Joshi, H. Jiang, P. Lin, K. Norris, N. Ge, Q. Wu,

M. Barnell, Z. Li, R. S. Williams, Q. Xia*, and J. Joshua Yang*, “Anatomy of Ag/hafnia

based selectors with 1010 nonlinearity”, ADVANCED MATERIALS 29, 1604457 (2017).

26. J. H. Yoon, J. Zhang, X. Ren, Z. Wang, H. Wu, Z. Li, M. Barnell, Q. Wu, L. J. Lauhon, Q.

Xia and J. Joshua Yang*, “Truly Electroforming-Free and low- Energy Memristors with

Pre-conditioned Conductive Tunneling Paths”, ADVANCED FUNCTIONAL MATERIALS

27, 1702010 (2017).

27. H. Jiang, D. Belkin, S. Savel'ev, S. Lin, Z. Wang, Y. Li, S. Joshi, R. Midya, C. Li, M.

Rao, M. Barnell, Q. Wu, J. Joshua Yang*, Q. Xia*, “A novel true random number

generator based on a stochastic diffusive memristor”, NATURE COMMUNICATIONS 8,

882 (2017).

28. C. Li, L. Han, H. Jiang, M. Jang, J. Joshua Yang, H. L. Xin and Q. Xia*, “3-Dimensional

Crossbar Arrays of Self-rectifying Si/SiO2/Si Memristors”, NATURE


29. Ch. Wu, T. W. Kim, H. Y. Choi, D. U. Lee, D. R. Strukov and J. Joshua Yang, “flexible

3D artificial synapse networks with correlated learning and trainable memory capability”,


30. Ch. Wu, T. W. Kim, T. Guo, F. Li, D. U. Lee, and J. Joshua Yang, “Mimicking classical

conditioning based on a single flexible memristor”, ADVANCED MATERIALS 29,

1602890 (2017).

31. B. J. Choi, J. Zhang, K. Norris, G. Gibson, K. M. Kim, W. Jackson, M. Zhang, Z. Li, J.

Joshua Yang*, and R. Stanley Williams*, “Trilayer Tunnel Selectors for Memristor

Memory Cells”, ADVANCED MATERIALS 28, 356-362 (2016).

32. B. J. Choi, A. C. Torrezan, J. P. Strachan, P. G. Kotula, A. J. Lohn, M. J. Marinella, R. S.

Williams* and J. Joshua Yang*, “High-speed and low-energy nitride memristors”,

ADVANCED FUNCTIONAL MATERIALS 26, 5290-6296 (2016).

4

33. B. J. Choi, A. C. Torrezan, K. J. Norris, F. Miao, J. P.Strachan, M.-X. Zhang, D. A. A.

Ohlberg, N. P. Kobayashi, J. Joshua Yang,* and R. S. Williams, “Electrical performance

and scalability of Pt dispersed SiO2 nanometallic resistance switch”, NANO LETTERS 13,

3217 (2013).

34. J. Joshua Yang*, Dmitri B. Strukov and Duncan R. Stewart, “Memristive devices for

computing”, NATURE NANOTECHNOLOGY 8, 13 (2013).

35. J. Joshua Yang*, M.-X. Zhang, M. D. Pickett, F. Miao, J. P. Strachan, W. Li, W. Yi, D. A.

A. Ohlberg, B. J. Choi, W. Wu, J. H. Nickel, G. Medeiros-Ribeiro and R. Stanley Williams,

“Engineering nonlinearity into memristors for passive crossbar applications”, APPLIED

PHYSICS LETTERS 100, 113501 (2012).

36. F. Miao, J. P. Strachan, J. Joshua Yang*, M.-X. Zhang, I. Goldfarb, A. C. Torrezan, P.

Eschbach, R. D. Kelley, G. Medeiros-Ribeiro and R. S. Williams “Anatomy of a nanoscale

conduction channel reveals the mechanism of a high-performance memristor”,

ADVANCED MATERIALS 23, 5633 (2011).

37. J. Borghetti, G. S. Snider, P. J. Kuekes, J. Joshua Yang, D. R. Stewart and R. S. Williams

“‘Memristive’ switches enable ‘stateful’ logic operations via material implication”,

NATURE 464, 873 (2010).

38. J. Joshua Yang*, M.-X. Zhang, John Paul Strachan, Feng Miao, Matthew D. Pickett,

Ronald D. Kelley, G. Medeiros-Ribeiro, R. Stanley Williams “High switching endurance in

TaOx memristive devices”, APPLIED PHYSICS LETTERS 97, 232102 (2010).

39. J. Joshua Yang, J. Borghetti, D. Murphy, D. R. Stewart and R. S. Williams “A family of

electronically reconfigurable nanodevices”, ADVANCED MATERIALS 21, 3754 (2009).

40. J. Joshua. Yang, F. Miao, D. Ohlberg, D. Stewart, R. S Williams “Electroforming

mechanism of metal/oxide/metal memristive switches”, NANOTECHNOLOGY 20,

215201(2009).

41. J. Joshua Yang, M. D. Pickett, X. Li, D. A. A. Ohlberg, D. R. Stewart, and R. S. Williams

“Memresistive switching mechanism for metal/oxide/metal nano-devices” NATURE

NANOTECHNOLOGY 3, 429 (2008).

Patents:

115 Granted patents (see detailed publication list) and 60 pending patents (documents

available upon request) with USPTO. Two patents on MRAM were licensed by Intel for

millions of dollars through UW-Madison and the patents on ReRAM/Memristor were

transferred to memory manufacturers, National Labs and startup companies for product

development. The patents at UMass led to a startup company recently.

Selected Invited Talks: (from over110 invited talks)

1. Nature Conference on Neuromorphic Computing 2019, “Tutorials on Neuromorphic

computing” (J. Joshua Yang UMass: Materials/Devices, Bill J. Dally Stanford:

Architecture/Algorithms, Simon Laughlin U. Cambridge: Neuroscience), Beijing, China.

(Invited Tutorial)

2. Nature Conference on Neuromorphic Computing 2019, “Neuromorphic computing with

dynamics of diffusive memristors”, Beijing, China. (Invited Talk)

3. The IEEE International Electron Devices Meeting (IEDM) 2019, San Francisco, USA.

(Invited)

4. APS 2020 March meeting “Materials and devices for neuromorphic computing”. (Invited)

5. Gordon Research Conference on Multifunctional Materials and Structures 2020, Ventura

CA. (Invited)

5

6. International Conference on Memristive Materials, Devices & Systems (MEMRISYS) 2019,

Dresden, Germany. (Plenary)

7. Nature Conference on Flexible Electronics-Visions of a Flexible Future 2018, Xi'an, China.

(Keynote)

8. International Conference on Neuromorphic Systems (ICONS) 2018, Knoxville, TN.

(plenary)

9. MRS Spring meetings, 2014, 2017, 2020 (invited talks); MRS Fall meetings, 2014, 2015,

2016, 2017 (Invited talks)


Beijing, China (2018). (Keynote)

11. International Emergent Memory Symposium (IEMS) 2018, Ji'an, China. (plenary)

12. The 6th Memristor and Memristive Symposium 2018, Budapest, Hungary. (plenary)


Athens, Greece. (Plenary)

14. International Symposium on Memory Devices for Abundant Data Computing 2017,

Hongkong. (Plenary)

15. Advances in ReRAM: Materials and Interfaces 2015, Crete, Greece. (Keynote)

16. China Semiconductor Technology International Conference (CSTIC) 2016, Shanghai, China

(Keynote)

17. The IEEE International Symposium on Circuits and Systems (ISCAS) 2014, Melbourne,

Australia. (Keynote)

18. The 224th Electrochemical Society Meeting 2013, ULSI Process Integration Symposium.,

CA. (Keynote)

19. Special Lecture, AirForce Research Lab, Rome, NY (2013). (Chief Scientist Lecture

Series)

20. The 11th Non-Volatile Memory Technology Symposium (NVMTS) 2011, Shanghai, China.

(Keynote)

Academic Activities:

Advisory Board:

• ADVANCED INTELLIGENT SYSTEMS: Executive Advisory Board

• ADVANCED MATERIALS TECHNOLOGIES: International Advisory Board

• THE INTERNATIONAL CONFERENCE ON ELECTROCERAMICS: International Advisory Board

• The 3rd INTERNATIONAL CONFERENCE on EMERGING MATERIALS,

TECHNOLOGIES AND APPLICATIONS FOR NON-VOLATILE MEMORY

DEVICES: International Advisory Board

Editorial Board: SCIENTIFIC REPORTS, FRONTIERS IN NEUROSCIENCE

Conference Chairs: The 8th and 10th IEEE Nanotechnology Symposiums on

“Emerging Non-volatile Memory Technologies” 2012, and “2D Devices and

Materials” 2014, respectively;

Conference co-Chair: The 1st and 2nd International Conference on Future

Computing, Beijing Sept. 2017, Shenzhen Dec 2018, respectively.

Conference co-Chair: “The 3rd international conference on emerging materials,

technologies and applications for non-volatile memory devices”, Salsomaggiore

Terme, Italy, June 2017.

Symposium co-chairs:

6

1. “Non-volatile Memory” in The IEEE International Electron Devices

Meeting (IEDM) 2014;

2. "Memristors" in the Electrochemical Society (ECS) Meeting, 2017;

3. “Ionics of memrsitor/resistive switches” in 21st Solid State Ionics (SSI),

2017;

4. “Memristive devices - from fundamentals to applications” in International

Materials Research Congress (IMRC), 2017;

5. “Emerging Materials, Technologies and Applications for Non-volatile

Memory Devices” in CIMTEC 2018.

Program/technical committees:

1. The EMN Meeting on Surface and Interface, 2016

2. The IEEE International Electron Devices Meeting (IEDM), 2014, 2015.

3. 5th International Conference on Smart and Multifunctional Materials, Devices,

Structures in CIMTEC 2016. (International Advisory Board)

4. The IEEE Silicon Nanoelectronics Workshop (SNW) 2014

5. The IEEE Non-Volatile Memory Technology Symposium (NVMTS). 2011-

2017

6. The International Conference on Advances in Circuits, Electronics and Micro-

electronics, 2018.

7. Elected officer, The IEEE Nanotechnology Council (SF and Bayarea) 2011-

2014

Guest Editors:

• “Non-volatile memory based on nanostructures”

(NANOTECHNOLOGY special issue, 2011);

• “Memristive and resistive devices and systems” (APPLIED PHYSICS A

Special Issue, 2011);

• “Solid-state Memristive Devices and Systems” (IEEE Journal on

Emerging and Selected Topics in Circuits and Systems, 2015);

• “Memristive Materials and Devices” (ADVANCED ELECTRONIC

MATERIALS special issue, 2018);

• “Materials for Neuromorphic Computing” (NANOTECHNOLOGY

special issue, 2019);

• “Memory Devices and Technologies for the Next Decade” (IEEE

TRANSACTIONS ON ELECTRON DEVICES special issue, 2019).

• Winner of UMass Spotlight Scholar (2017).

• Nominee for Samuel F. Conti Faculty Fellowship Awards (2018).

• Oversea review expert of CAS (2018).

Teaching related activities:

• Courses taught at UMass Amherst (Note: Excellent = 4.0 / 5):

o EC-ENG 597DM-01: ST-Post-CMOS Devices and Materials (device

emphasized),

▪ Spring 2015, 3 Undergraduates, 12 Graduates

▪ Score to Q11 (overall rating by students) 4.35 / 5

o EC-ENG 597MD-01: ST-Post-CMOS Materials and Devices (Materials

emphasized),

7

▪ Fall 2015, 9 Undergraduates, 20 Graduates


o EC-ENG 571: Microelectronics Fabrication (Laboratory),



o EC-ENG 344: Semiconductor Devices and Materials (Discussion),



o EC-ENG 571: Microelectronics Fabrication (Lecture),



o EC-ENG 344: Semiconductor Devices and Materials (Lecture),






o EC-ENG 344: Semiconductor Devices and Materials (Lecture),






• M.S. and Ph. D advising (10):

O Ph.D students: Mingyi Rao, Navnidhi Upadhyay, Ye Zhuo, Shiva Asapu, Rivu

Midya, Wenhao Song, Jun Yin (7)

O Visiting Ph. D students: Yang Zhang, Xumen Zhang (2)

O Postdocs: Zhongrui Wang (1)

• Advisees (21):

O Kate Norris (Ph. D, Apple now), Nihar Athreyas (Ph. D, Sperodevices now),

Ning Ge (Ph. D, TetraMem now) (3)

O Thesis master students: Yunning Li (Goodix now), Rivu Midya (Ph. D student

now) (2)

O Visiting Ph. D students: Rui Zhang (Hawei now), Peng Yan (Huawei Now),

Krishna Rajan (Honda now), Wen Sun (Tsinghua Univ. now) (4)

8

O Paid research interns at UMass: Somnath Chakraborty (Intel), J.C. Davis

(Bechtel Marine Propulsion Corporation), Ivan Williams (UMass) (3)

O Postdocs: Saumil Joshi (Micron Technology Inc.), Moon Hyung Jang, B. J. Choi

(Assistant Professor, Seoul National University of Science and Technology),

Kyung Min Kim (Assistant Professor KAIST), Jungho Yoon (Samsung), Yibo

Li (UMASS Lowell) (5)

O Interns at HP Labs: Lu Zhang (Twitter), Miao Hu (Assistant professor,

Binghamton University), Beiye Liu (Amazon), Dongxue Zhao (Assistant

Professor, Greenville College) (4)

International activities and collaborations (with no research funding involved):

• Chua Memristor Center (Contact: Ronald Tetzlaff)

• Chua Memristor Institute (Contact: Xiangshui Miao)

• Nanjing University (Contact: Feng Miao)

• Tsinghua University (Contact: Huaqiang Wu)

• Peking University (Contact: Ru Huang)

• Hanyang University (Contact: Tae Whan Kim)

• Chinese Academy of Science (Contact: Ming Liu)

Extramural grants awarded since joined UMass in 2015 (total $5,905,137):

1. J. Joshua Yang (PI), Q. Xia (co-PI), Memristor Crossbar Arrays For Analog and

Neuromorphic Computing, Air Force Research Lab (AFRL), 1/25/2015-12/26/2018,

$1,569,992 (Yang share $863,492)

2. J. Joshua Yang (PI), Analog Memristor Based Hybrid Computation Engine, IARPA,

03/1/2015 – 02/29/2016, $249,983

3. J. Joshua Yang (PI), Fundamental Material Research for Unconventional Computing,

Hewlett-Packard Co, 03/01/2015-02/29/2016, $99,994

4. J. Joshua Yang (PI), Q. Xia (co-PI), Fundamental Material Research for Unconventional

Computing, Hewlett-Packard Enterprise, 02/01/2016-01/31/2018, $75,000 (Yang share

$41,250)

5. J. Joshua Yang (PI), Q. Xia (co-PI), Hybrid CMOS/Memristor Analog Co-Processor for

Efficient, DARPA (subcontract through Sperodevices), 3/1/2016-12/10/2016, $44,939

(Yang share $24,716)

6. J. Joshua Yang (PI), Memristor device characterizations for Vector-Matrix

Multiplication application, Sperodevices, 9/8/2015-1/18/2016, $8,220

7. J. Joshua Yang (PI), Q. Xia (co-PI), Memristor based non-volatile memory for

embedded applications, Goodix Inc., 04/01/2017-3/31/2019, $400,000 (Yang share

$220,000)

8. J. Joshua Yang (UMass, PI), Q. Xia (co-PI), Memristor-CMOS Analog Co-Processor

for Efficient Computation of PDEs, DARPA (subcontract through Sperodevices),

5/1/2017-4/30/2020, $697,015 (Yang share $383,358)

9

9. J. Joshua Yang (co-PI), Q. Xia (PI), Fully Integrated Memristor System for

Neuromorphic and Analog Computing, AFRL, 01/01/2018-12/31/2020, $799,997 (Yang

share $399,999)

10. J. Joshua Yang (PI), Selector Devices For Emerging Non-Volatile Memory, Western

Digital, 07/20/2018-07/19/2019, $60,000.

11. J. Joshua Yang (PI), Brain-inspired networks for multifunctional intelligent systems in

aerial vehicles, MURI/AFOSR, 06/01/2019-5/31/2024, $999,997.

12. J. Joshua Yang (PI), Q. Xia (co-PI), Memristor based non-volatile memory for

embedded applications (Renew), Goodix Inc., 04/01/2019-3/31/2021, $399,627.

13. J. Joshua Yang (PI), Q. Xia (co-PI), Material fundamentals of memristor for computing

accelerators, TetraMem Inc., 04/30/2019-10/31/2020, $499,756.

14. J. Joshua Yang (PI), Selector Devices For Emerging Non-Volatile Memory (Renew),

Western Digital, 07/20/2019-07/19/2020, $60,000.

Detailed lists:

• 152 refereed papers

• 115 Granted Patents

• 110 invited/keynote/plenary talks

10

Peer-reviewed papers (* indicates corresponding author):

Papers after joining UMass:

Journal papers

1. Z. Wang, H. Wu, G. Burr, C. S. Hwang, K. L. Wang, Q. Xia* and J. Joshua Yang*,

“Resistive switching materials for information processing”, NATURE REVIEW

MATERIALS, in press (2019, invited review).


Xia, and J. Joshua Yang*, “Learning with Resistive Switching Neural Networks”,

IEDM Accepted, (2019, invited paper).

3. X. Zhang, Z. Wang, W. Song, R. Midya, Y. Zhuo, R.Wang, M. Rao, Q. Xia, J.

Joshua Yang*, Qi Liu*, and M. Liu*, “Experimental Demonstration of Conversion-

based SNNs with 1T1R Mott Neurons for Neuromorphic Inference”, IEDM Accepted,

(2019).

4. J. Tang, F. Yuan, X. Shen, Z.Wang, M. Rao, Y. He, Y. Sun, X. Li, W. Zhang, Y. Li,

B. Gao, H. Qian, G. Bi, S. Song, J. Joshua Yang*, H. Wu*, “Bridging Biological and

Artificial Neural Networks with Emerging Neuromorphic Devices: Fundamentals,

Progress, and Challenges”, ADVANCED MATERIALS,

https://doi.org/10.1002/adma.201902761 , (2019, invited review).

5. Z. Wang, C. Li, P. Lin, M. Rao, Y. Nie, W. Song, Q. Qiu, Y. Li, P. Yan, J. P.

Strachan, N. Ge, N. McDonald, Q. Wu, M. Hu, H. Wu, R. S.Williams, Q. Xia*, J.

Joshua Yang*, “In situ training of feedforward and recurrent convolutional memristor

networks”, NATURE MACHINE INTELLIGENCE 1, 434 – 442 (2019).

6. W. Chen, C. Dou, K. Li, W. Lin, P. Li, J. Huang, W. Wei, J. Wang, C. Xue, Y. Chiu,

Y. King, C. Lin, R. Liu, C. Hsieh, K. Tang, J. Joshua Yang, M. Ho, and M. Chang,

"CMOS-integrated memristive non-volatile computing-in-memory for AI edge

processors", NATURE ELECTRONICS 2, 420 – 428 (2019).

7. W. Sun, B. Gao, M. Chi*, Q. Xia, J. Joshua Yang*, H. Qian, H. Wu*,

“Understanding memristive switching via in-situ characterizations and device

modeling”, NATURE COMMUNICATIONS 10, 3453 (2019).

8. R. Midya, Z. Wang, S. Asapu, X. Zhang, M. Rao, W. Song, Y. Zhuo, N. Upadhyay,

Q. Xia*, and J. Joshua Yang*, “Reservoir Computing using Diffusive Memristors”,

ADVANCED INTELLIGENT SYSTEMS, https://doi.org/10.1002/aisy.201900084

online (2019, invited paper)

9. Z. Wang, C. Li, W. Song, M. Rao, D. Belkin, Y. Li, P. Yan, H. Jiang, P. Lin, M. Hu,

J. P. Strachan, N. Ge, M. Barnell, Q. Wu, A. G. Barto, Q. Qiu, R. S. Williams, Q. Xia,

and J. Joshua Yang*, “Reinforcement learning with analogue memristor arrays”,

NATURE ELECTRONICS 2, 115-124 (2019).

10. Q. Xia* and J. Joshua Yang*, “Memristive crossbar arrays for bio-inspired

computing”, NATURE MATERIALS 18, 309-323(2019).

11. N. K. Upadhyay, H. Jiang, Z. Wang, S. Asapu, Q. Xia, and J. Joshua Yang*,

"Emerging Memory Devices for Neuromorphic Computing." ADVANCED

MATERIALS TECHNOLOGIES 4, 1800589 (2019).

12. C. Li, Z. Wang, M. Rao, D. Belkin, W. Song, H. Jiang, Y. Li, P. Lin, M. Hu, N. Ge, J.

P. Strachan, M. Barnell, Q. Wu, R. S. Williams, J. Joshua Yang*, and Q. Xia*, “Long

short-term memory networks in memristor crossbars”, NATURE MACHINE

INTELLIGENCE 1, 49-57 (2019).

https://doi.org/10.1002/adma.201902761

https://doi.org/10.1002/aisy.201900084

11

13. S. Pi, C. Li, H. Jiang, W. Xia, H. Xin, J. Joshua Yang, and Q. Xia*, “Memristor

crossbar arrays with 6-nm half-pitch and 2-nm critical dimension”, NATURE


14. E. J Fuller, S. T Keene, A. Melianas, Z. Wang, S. Agarwal, Y. Li, Y. Tuchman, C. D.

James, M. J. Marinella, J Joshua Yang, A. Salleo*, A A. Talin*, “Parallel

programming of an ionic floating-gate memory array for scalable neuromorphic

computing”, SCIENCE 364, 570-574 (2019).

15. Y. Wang, K. Kang, M. Kim, H. Lee, R. Waser, D. Wouters, R. Dittmann, J. Joshua

Yang, H. Park, “Mott-transition-based RRAM”, MATERIALS TODAY,

https://doi.org/10.1016/j.mattod.2019.06.006 (2019).

16. R. Midya, Z. Wang, S. Asapu, S. Joshi, Y. Li, Y. Zhuo, W. Song, H. Jiang, N.

Upadhay, M. Rao, P. Lin, C. Li, Q. Xia, J. Joshua Yang* “Artificial Neural

Network (ANN) to Spiking Neural Network (SNN) Converters Based on Diffusive

Memristors”, ADVANCED ELECTRONICS MATERIALS,

https://doi.org/10.1002/aelm.201900060 (2019).

17. M. Lanza, et. al., “Recommended methods to study resistive switching devices”,

ADVANCED ELECTRONICS MATERIALS 4, 1800143 (2019).

18. A. Chen, D. Supriyo, X. S. Hu, M. T. Niemier, T. Š. Rosing, and J. Joshua Yang. “A

Survey on Architecture Advances Enabled by Emerging Beyond-CMOS

Technologies”, IEEE DESIGN & TEST 36, 46-68 (2019).

19. Z. Wang, M. Rao, J.-W. Han, J. Zhang, P. Lin, Y. Li, C. Li, W. Song, S. Asapu, R.

Midya, Y. Zhuo, H. Jiang, J. H. Yoon, N. K. Upadhyay, S. Joshi, M. Hu, J. P.

Strachan, M. Barnell, Q. Wu, H. Wu, Q. Qiu, R. S. Williams, Q. Xia*, and J. Joshua

Yang*, “Capacitive neural network with neuro-transistors”, NATURE


20. C. Li, D. Belkin, Y. Li, P. Yan, M. Hu, N. Ge, H. Jiang, E. Montgomery, P. Lin, Z.

Wang, J. P. Strachan, M. Barnell, Q. Wu, R. S. Williams, J. Joshua Yang*, and Q.

Xia*, “Efficient and self-adaptive in-situ learning in multilayer memristive neural

networks”, NATURE COMMUNICATIONS 9, 2385 (2018).

21. Z. Wang, S. Joshi, S. Savel’ev, W. Song, R. Midya, Y. Li, M. Rao, P. Yan, S. Asapu,

Y. Zhuo, H. Jiang, P. Lin, C. Li, J. H.. Yoon, N. K. Upadhyay, J. Zhang, M. Hu, J. P.

Strachan, M. Barnell, Q. Wu, H. Wu, R. Stanley Williams, Q. Xia, and J. Joshua

Yang*, “Fully memristive neural networks for pattern classification with unsupervised

learning”, NATURE ELECTRONICS 1, 137-145 (2018).

22. C. Li, M. Hu, Y. Li, H. Jiang, N. Ge, E. Montgomery, Z. Li, J. P. Strachan*, P. Lin, W.

Song, Z. Wang, M. Barnell, Q. Wu, R. S. Williams, J. Joshua Yang*, Q. Xia*,

“Analogue signal and image processing with large memristor crossbars”, NATURE

ELECTRONICS 1, 52-59 (2018).

23. M. Hu, C. E. Graves, C. Li, Y. Li, N. Ge, E. Montgomery, N. Davila, H. Jiang, R. S.

Williams, J. Joshua Yang*, Qiangfei Xia*, and John Paul Strachan*, “Memristor-

based analog computation and neural network classification with a dot product

engine”, ADVANCED MATERIALS 29, 1705914 (2018).

24. J. H. Yoon, Z. Wang, K. M. Kim, H. Wu, V. Ravichandran, Q. Xia*, C. S. Hwang and

J. Joshua Yang*, “An Artificial Nociceptor Based on a Diffusive Memristor”,


25. M. Wang, S. Cai, C. Pan, C. Wang, X. Lian, K. Xu, Y. Zhuo, J. Joshua Yang*, P.

Wang*, F. Miao*, “Ultra-robust memristors based on fully layered two-dimensional

materials”, NATURE ELECTRONICS 1, 130-136 (2018).

https://doi.org/10.1016/j.mattod.2019.06.006

https://doi.org/10.1002/aelm.201900060

12

26. H. Jiang, C. Li, R. Zhang, P. Yan, P. Lin, Y. Li, J. Joshua Yang*, D. Holcomb*, and

Q. Xia*, “Provable Key Destruction with Large Memristor Crossbars”, NATURE

ELECTRONICS 1, 548-554 (2018).

27. Z. Wang, M. Rao, R. Midya, S. Joshi, H. Jiang, P. Lin, W. Song, S. Asapu, Y. Zhuo,

C. Li, H. Wu*, Q. Xia*, and J. Joshua Yang*, “Threshold Switching of Ag or Cu in

dielectrics: Materials, Mechanism, and Applications”, ADVANCED FUNCTIONAL

MATERIALS 28, 1704862 (invited feature article, 2018).

28. N. Athreyas, W. Song, B. Perot, Q. Xia, A. Mathew, J. Gupta, D. Gupta, and J.

Joshua Yang*, “Memristor-CMOS Analog Coprocessor for Acceleration of High-

Performance Computing Applications.” ACM Journal on Emerging Technologies in

Computing Systems (JETC) 14, no. 3 (2018): 38.

29. J. Joshua Yang* and Q. Xia, “Battery-like artificial synapses”, NATURE

MATERIALS 16, 396-397 (2017).

30. Z. Wang, S. Joshi, S. E. Savel’ev, H. Jiang, R. Midya, P. Lin, M. Hu, N. Ge, J. P.

Strachan, Z. Li, Q. Wu, M. Barnell, G-L Li, H. L. Xin, R. S. Williams, Q. Xia, and J.

Joshua Yang*, “Memristors with diffusive dynamics as synaptic emulators for

neuromorphic computing”, NATURE MATERIALS 16, 101-108 (2017).

31. R. Midya, Z. Wang, J. Zhang, C. Li, S. Joshi, H. Jiang, P. Lin, K. Norris, N. Ge, Q.

Wu, M. Barnell, Z. Li, R. S. Williams, Q. Xia*, and J. Joshua Yang*, “Anatomy of

Ag/hafnia based selectors with 1010 nonlinearity”, ADVANCED MATERIALS 29,

1604457 (2017).

32. J. H. Yoon, J. Zhang, X. Ren, Z. Wang, H. Wu, Z. Li, M. Barnell, Q. Wu, L. J.

Lauhon, Q. Xia and J. Joshua Yang*, “Truly Electroforming-Free and low- Energy

Memristors with Pre-conditioned Conductive Tunneling Paths”, ADVANCED

FUNCTIONAL MATERIALS 27, 1702010 (2017).

33. H. Jiang, D. Belkin, S. Savel'ev, S. Lin, Z. Wang, Y. Li, S. Joshi, R. Midya, C. Li, M.

Rao, M. Barnell, Q. Wu, J. Joshua Yang*, Q. Xia*, “A novel true random number

generator based on a stochastic diffusive memristor”, NATURE COMMUNICATIONS

8, 882 (2017).

34. R. Zhang, W. Pang, Z. Feng, X. Chen, Y. Chen, Q. Zhang, H. Zhang, C. Sun, J.

Joshua Yang, and Da. Zhang, “Enabling selectivity and fast recovery of ZnO

nanowire gas sensors through resistive switching.” SENSORS AND ACTUATORS B:

CHEMICAL 238, 357-363 (2017).

35. J. J. Diaz Leon, K. J. Norris, J. Joshua Yang, J. F. Sevic, N. P. Kobayashi, “A

niobium oxide-tantalum oxide selector-memristor self-aligned nanostack”, APPLIED

PHYSICS LETTERS 110, 103102 (2017).

36. X. Lian, M. Wang, P. Yan, J. Joshua Yang*, F. Miao, “Reset switching statistics of

TaOx-based Memristor”, JOURNAL OF ELECTROCERAMICS,

https://doi.org/10.1007/s10832-017-0094-x (2017).

37. C. Li, L. Han, H. Jiang, M. Jang, J. Joshua Yang, H. L. Xin and Q. Xia, “3-

Dimensional Crossbar Arrays of Self-rectifying Si/SiO2/Si Memristors”, NATURE


38. X. Lian, M. Wang, M. Rao, P.Yan, J. Joshua Yang*, F. Miao, “Characteristics and

transport mechanisms of multiple triple resistance switching regimes of TaOx

memristor”, APPLIED PHYSICS LETTERS, 110, 173504 (2017).

39. M. Hu, Y. Chen, Y. Wang, H. H. Li, “A Compact Memristor-Based Dynamic Synapse

for Spiking Neural Networks”, IEEE TRANSACTIONS ON COMPUTER-AIDED

DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS 8, 1353 (2017).

http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=43

http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=43

13

40. Ch. Wu, T. W. Kim, H. Y. Choi, D. U. Lee, D. R. Strukov and J. Joshua Yang,

“flexible 3D artificial synapse networks with correlated learning and trainable memory

capability”, NATURE COMMUNICATIONS 8, 752 (2017).

41. Ch. Wu, T. W. Kim, T. Guo, F. Li, D. U. Lee, and J. Joshua Yang, “Mimicking

classical conditioning based on a single flexible memristor”, ADVANCED

MATERIALS 29, 1602890 (2017).

42. Z. Wang, H. Jiang, M. Jang, P. Lin, A. Ribbe, Qing Wu, Mark Barnell, Qiangfei Xia,

and J. Joshua Yang*, “Electrochemical Metallization Switching with a Platinum

Group Metal in Different Oxides”, NANOSCALE 8, 14023-14030 (2016).

43. B. J. Choi, J. Zhang, K. Norris, G. Gibson, K. M. Kim, W. Jackson, M. Zhang, Z. Li,

J. Joshua Yang*, and R. Stanley Williams*, “Trilayer Tunnel Selectors for Memristor

Memory Cells”, ADVANCED MATERIALS 28, 356-362 (2016).

44. B. J. Choi, A. C. Torrezan, J. P. Strachan, P. G. Kotula, A. J. Lohn, M. J. Marinella, R.

S. Williams* and J. Joshua Yang*, “High-speed and low-energy nitride memristors”,

ADVANCED FUNCTIONAL MATERIALS 26, 5290-6296 (2016).

45. W. Yi, S. E. Savel`ev, G. Medeiros-Ribeiro, F. Miao, M.-X. Zhang, J. Joshua Yang,

A. M. Bratkovsky, and R. S. Williams, “Enhanced noise at quantum conductance in

memristors”, NATURE COMMUNICATIONS 7, 11142 (2016).

46. K. M. Kim, J. Joshua Yang, J. P. Strachan, E. M.Grafals, N. Ge, N. D. Melendez, Z.

Li, and R. S. Williams, “Voltage divider effect for the improvement of variability and

endurance of TaOx memristor”, SCIENTIFIC REPORTS 6, 20085- (2016).

47. X. Liu, M. Mao, B. Liu, B. Li, Y. Wang, H. Jiang, M. Barnell, Q. Wu, J. Joshua

Yang, H. Li, Y. Chen, “Harmonica: A Framework of Heterogeneous Computing

Systems with Memristor-based Neuromorphic Computing Accelerators”, IEEE

TRANSACTIONS ON CAS I 63.5, 617 (2016).

48. H. Jiang, L. Han, P. Lin, Z. Wang, M. H. Jang, J. Joshua Yang, H. Xin, and Q. Xia,

“Sub-10 nm Ta channel responsible for superior performance of a HfO2 memristor”,

SCIENTIFIC REPORTS 6, 28525 (2016).

49. J. Zhang, K. J. Norris, G. Gibson, D. Zhao, K. Samuels, M. Zhang, J. Joshua Yang, J.

Park, R. Sinclair, Y. Jeon, Z. Li, R. S. Williams, “Thermally induced crystallization in

NbO2 thin films”, SCIENTIFIC REPORTS 6, 34294 (2016).

50. N. K. Upadhyay, J. Saumil, and J. Joshua Yang*, “Synaptic electronics and

neuromorphic computing”, SCIENCE CHINA INFORMATION SCIENCES 59,

061404 (2016).

51. M. Hu, Y. Chen, J. Joshua Yang, Y. Wang, H. Li, “A Memristor-based Dynamic

Synapse for Spiking Neural Networks” IEEE Transactions on Computer-Aided

Design of Integrated Circuits and Systems, 10.1109/TCAD.2016.2618866 (2016).

52. R. Zhang, W. Pang, Q. Zhang, Y. Chen, X. Chen, Z. Feng, J. Joshua Yang, and D.

Zhang, “Enhanced non-volatile resistive switching in suspended single-crystalline

ZnO nanowire with controllable multiple states.” NANOTECHNOLOGY 27, 315203

(2016).

53. K. M. Kim, J. Zhang, C. Graves, J. Joshua Yang, B. J. Choi, C. S. Hwang, Z. Li, R.

S. Williams, “Low power, self-rectifying, and forming-free memristor with an

asymmetric programing voltage for a high density crossbar application", NANO

LETTERS 16, 6724-6732 (2016).

54. N. Ge*, J. H. Yoon, M. Hu, E. J. Merced-Grafals, Z. Li, H. Holder, Q. Xia, R. S.

Williams, X. Zhou, J. Joshua Yang*, “An efficient analog Hamming distance

comparator based on a diagonal memristive crossbar array” SCIENTIFIC REPORTS 7,

40135 (2016).

14

55. L. Zhang, N. Ge, J. Joshua Yang, Z. Li, R. S. Williams, and Y. Chen, “Low voltage

two-state-variable memristor model of vacancy-drift resistive switches”, APPLIED

PHYSICS A 119, 1-9 (2015).

56. M, Wang, X, Lian, Y. Pan, B. Wang, J. Joshua Yang*, F. Miao, and D. Xing, “A

selector device based on graphene-oxide heterostructures for memristor crossbar

applications”, APPLIED PHYSICS A 120, 403-407 (2015).

57. K. M. Kim, J. Joshua Yang, E. Merced, C. Graves, S. Lam, N. Davila, M. Hu, N. Ge,

Z. Li, R. S. Williams, and C. S. Hwang, “Low Variability Resistor–Memristor Circuit

Masking the Actual Memristor States”, ADVANCED ELECTRONIC MATERIALS 1,

1500095 (2015).

58. J. Zhang, K. Norris, K. Samuels, N. Ge, M. Zhang, J. Park, R. Sinclair, G. Gibson, J.

Joshua Yang, Z. Li and R. S. Williams, “Electron Energy-Loss Spectroscopy (EELS)

Study of NbOx Film for Resistive Memory Applications”, MICROSCOPY AND

MICROANALYSIS 21, 285 (2015).

59. R. Zhang, H. Jiang, Z. Wang, P. Lin, Ye. Zhuo, D. Holcomb, D. Zhang, J. Joshua

Yang, Q. Xia, “Nanoscale Diffusive Memristor Crossbars as Physical Unclonable

Functions”, NANOSCALE 10, 2721, (2018).

60. T. Ahmed, S. Walia, E. L.H. Mayes, R. Ramanathan, P. Guagliardo, V. Bansal, M.

Bhaskaran, J. Joshua Yang, S. Sriram, “Inducing tunable switching behavior in a

single memristor”, APPLIED MATERIALS TODAY 11, 280-290 (2018).

61. L. Zhang, W. Song, J. Joshua Yang, H. Li, Y. Chen, “A compact model for selectors

based on metal doped electrolyte”, APPLIED PHYSICS A 124, 333 (2018).

62. Y. Li, Z. Wang, R. Midya, Q. Xia and J. Joshua Yang*, “Review of memristor

devices in neuromorphic computing: materials sciences and device

challenges” Journal of Physics D: Applied Physics on brain-inspired pervasive

computing (special issue) 51, 503002 (2018).

63. S. Pi, C. Li, H. Jiang, W. Xia, H. Xin, J. Joshua Yang, and Q. Xia*, “Memristor

crossbar arrays with 6-nm half-pitch and 2-nm critical dimension”, NATURE


64. R. Midya, Z.Wang, S. Asapu, S. Joshi, Y. Li, Y. Zhuo, W. Song, H. Jiang, N.

Upadhay, M. Rao, P. Lin, C. Li, Q. Xia, J. Joshua Yang*, “Artificial Neural Network

(ANN) to Spiking Neural Network (SNN) Converters Based on Diffusive

Memristors”, ADVANCED ELECTRONIC MATERIALS, 1900060 (2019).

65. A. Chen, S. Datta, X. S. Hu, M. T. Niemier, T. Š. Rosing, J. Joshua Yang*, “A

Survey on Architecture Advances Enabled by Emerging Beyond-CMOS

Technologies”, IEEE Design & Test, 36, 46-68 (2019).

Journal papers (to be published):

66. Y. Zhang, Y. Yang, Q. Xia, R. Huang, J. Joshua Yang*, “Neural Networks based on

memristors”, APPLIED PHYSICS REVIEW, under review (2018, invited review).

Conference proceedings:


Xia, and J. Joshua Yang*, “Learning with Resistive Switching Neural Networks”,

IEDM in press, (2019, invited paper).

68. S. Chakraborty, S. Joshi, Q. Xia, H. Li, Y. Chen, H. Jiang, Q. Wu, M. Barnell, J. Joshua

Yang*, "Built-in selectors self-assembled into memristors", 2016 IEEE International

Symposium on Circuits and Systems (ISCAS'16) (2016).

15

69. M. Hu, J. P. Strachan, Z. Li, E. M. Grafals, N. Davila, C. Graves, S. Lam, N. Ge, R. S.

Williams, J. Joshua Yang, “Dot-Product Engine for Neuromorphic Computing:

Programming 1T1M Crossbar to Accelerate Vector-Matrix Multiplication”, the 53rd

Design Automation Conference (DAC) (2016).

70. B. Yan, A. Mahmoud Mahmoud, J. Joshua Yang, Q. Wu, Y. Chen, H. Li, “A

Neuromorphic ASIC Design Using One-Selector-One-Memristor Crossbar”, 2016

IEEE International Symposium on Circuits and Systems (ISCAS'16) (2016).

71. H. Jiang, W. Zhu, F. Luo, K. Bai, C. Liu, X. Zhang, J. Joshua Yang, Qiangfei Xia, Y.

Chen, H. Li and Q. Wu, “Cyclical Sensing Integrate-and-Fire Circuit for Memristor

Array Based Nesynuromorphic Computing”, 2016 IEEE International Symposium on

Circuits and Systems (ISCAS'16) (2016).

72. J. Norris, J. Joshua Yang, N. P. Kobayashi, “TEM and EELS Study on TaOx-based

Nanoscale Resistive Switching Devices”, MRS Proceeding, 1805 (2015).

73. K. J. Norris, J. Joshua Yang, N. P. Kobayashi, “Structural and Chemical Analysis of

Nanoscale Resistive Switching Devices: Assessment on Nonlinear Properties”, MRS

Proceeding, 1805 (2015).

74. L. Ni, Z. Liu, W. Song, J. Joshua Yang, H. Yu, K. Wang, and Y. Wang. “An energy-

efficient and high-throughput bitwise CNN on sneak-path-free digital ReRAM

crossbar.” In Low Power Electronics and Design (ISLPED, 2017 IEEE/ACM

International Symposium on, pp. 1-6. IEEE, (2017).

75. H. Jiang, K. Yamada, Z. Ren, T. Kwok, F. Luo, Q. Yang, X. Zhang, J. Joshua Yang,

Q. Xia, Y. Chen, H. Li, Q. Wu, and M. Barnell, “Pulse-Width Modulation based Dot-

Product Engine for Neuromorphic Computing System using Memristor Crossbar

Array”, 2018 IEEE International Symposium on Circuits and Systems, accepted

(ISCAS'18) (2018).

76. Z. Wang, R. Midya, S. Joshi, H. Jiang, C. Li, P. Lin, W. Song, M. Rao, Y. Li, M.

Barnell, Q. Wu, Q. Xia, J. Joshua Yang*, “Unconventional computing with diffusive

memristors”, 2018 IEEE International Symposium on Circuits and Systems, accepted

(ISCAS'18) (2018).

Book chapters:

77. R. Waser, D. Ielmini, H. Akinaga, H. Shima, H.-S. P. Wong, J. Joshua Yang, S. Yu,

“Introduction to nanoionic elements for information technology”, Resistive switching

– from fundamentals of nanoionic redox processes to memristive device applications,

(Chapt. 1, P1, Wiley-VCH) (2016).

78. M. Rao, R. Midya, J Joshua Yang*, “Oxide memristor and applications”, Pan

Stanford Series on Intelligent NanoSystems (Vol. 3, CRC press) (2017).

79. R. Midya, Z. Wang, M. Rao, N. K. Upadhyay, J. Joshua Yang*, “RRAM/memristor

for computing”, Advances in Non-volatile Memory and Storage Technology (2nd Ed.,

Elsevier) P. 539-583 (2019).

Papers before joining UMass:

Journal papers 80. J. Joshua Yang*, Dmitri B. Strukov and Duncan R. Stewart, “Memristive devices for

computing”, NATURE NANOTECHNOLOGY 8, 13 (2013).

81. J. Joshua Yang, M. D. Pickett, X. Li, D. A. A. Ohlberg, D. R. Stewart, and R. S. Williams,

“Memresistive switching mechanism for metal/oxide/metal nano-devices” NATURE NANOTECHNOLOGY, 3, 429 (2008).

82. J. Joshua Yang, J. Borghetti, D. Murphy, D. R. Stewart and R. S. Williams, “A family of

electronically reconfigurable nanodevices”, ADVANCED MATERIALS, 21, 3754 (2009).

16

83. J. Joshua Yang*, J. P. Strachan, Q. Xia, D. A. A. Ohlberg, P. J. Kuekes, R. D. Kelley, W. F.

Stickle, D. R. Stewart, G. Medeiros-Ribeiro, R. S. Williams, “Diffusion of adhesion layer metals

controls nanoscale memristive switching”, ADVANCED MATERIALS, 22, 4034 (2010).

84. J. Joshua. Yang, F. Miao, D. Ohlberg, D. Stewart, R. S Williams, “Electroforming mechanism

of metal/oxide/metal memristive switches”, NANOTECHNOLOGY, 20, 215201 (2009).

85. J. Joshua Yang*, H. Xiang, C-x. Ji, W. F. Stickle, D. R. Stewart, D. A. A. Ohlberg, R. S.

Williams, Y. A. Chang, “Origin of inverse tunneling magnetoresistance in a symmetric junction

revealed by delaminating the buried electronic interface”, APPLIED PHYSICS LETTERS, 95, 233117 (2009).

86. J. Joshua Yang, C.-X. Ji, X. Ke, M. S. Rzchowski, and Y. A. Chang, “Over 70% tunneling

magnetoresistance at room temperature for a CoFe and AlOx based magnetic tunnel junction”,

APPLIED PHYSICS LETTERS, 89, 202502 (2006).

87. J. Joshua Yang, A. K. Bengtson, C.-X. Ji, D. Morgan, and Y. A. Chang, “Crystal structure

effect of ferromagnetic electrode on tunneling magnetoresistance”, ACTA MATERIALIA, 56,

1491 (2008).

88. J. Joshua Yang*, A. K. Bengtson, C.-X. Ji, D. Morgan, and Y. A. Chang, “Origin of the

dependence of magnetoresistance on the composition of Co100-xFex electrodes in magnetic

tunnel junctions”, JOURNAL OF APPLIED PHYSICS, 103, 056102 (2008). 89. J. Joshua Yang, Y. Yang, F. Liu, B. B. Pant, A. E. Schultz, and Y. A. Chang, “Thickness

determination of ultra-thin oxide films and its application in magnetic tunnel junctions”,

JOURNAL OF ELECTRONIC MATERIALS, 35, 2142 (2006).

90. J. Joshua Yang, Y. Yang, K. Wu, Y. Austin Chang, “The formation of amorphous alloy oxides

as barriers used in magnetic tunnel junctions”, JOURNAL OF APPLIED PHYSICS, 98, 074508

(2005).

91. J. Joshua Yang, P. F. Ladwig, Y. Yang, C.-X. Ji, and Y. Austin Chang, F. X. Liu, B. B. Pant,

and A. E. Schultz, “Oxidation of tunnel barrier metals in magnetic tunnel junctions”, JOURNAL

OF APPLIED PHYSICS, 97, 10C918 (2005). 92. J. Joshua. Yang, C.-X. Ji, Y. Yang, H. Xiang and Y. A. Chang, “Epitaxial growth and surface

roughness control of ferromagnetic thin films on Si by sputter-deposition”, JOURNAL OF

ELECTRONIC MATERIALS, 37, 355 (2008).

93. J. Joshua Yang, C. J. Rawn, C.-X. Ji, Y. A. Chang, Y. Chen, R. Ragan, D. A. A. Ohlberg, R.

S. Williams, “Thermal expansion coefficients of rare earth metal disilicides and their influence

on the growth of disilicide nanowires”, APPLIED PHYSICS A-MATER, 82, 39 (2006).

94. J. Joshua Yang*, N. P. Kobayashi, J. P. Strachan, D. A. A. Ohlberg, Matthew D. Pickett, J.

Borghetti, Z. Li, G. Ribeiro-Medeiros, R. S. Williams, “Dopant control by atomic layer

deposition in oxide films for memristive switches”, CHEMISTRY OF MATERIALS, 23, 123

(2011).

95. J. Joshua Yang*, John Paul Strachan, Feng Miao, M.-X. Zhang, Matthew D. Pickett, Wei Yi,

Douglas A. A. Ohlberg, G. Medeiros-Ribeiro, R. Stanley Williams, “Metal/TiO2 interfaces for

memristive switches”, APPLIED PHYSICS A, 102, 785 (2010).

96. J. Joshua Yang*, M.-X. Zhang, John Paul Strachan, Feng Miao, Matthew D. Pickett, Ronald

D. Kelley, G. Medeiros-Ribeiro, R. Stanley Williams, “High switching endurance in TaOx

memristive devices”, APPLIED PHYSICS LETTERS, 97, 232102 (2010).

97. J. Joshua Yang*, R. Stanley Williams, “Memristive devices in computing system: promises

and challenges”, ACM JOURNAL ON EMERGING TECHNOLOGIES IN COMPUTING SYSTEMS, 9, 11-1 (2013). (invited review)

98. J. Joshua Yang*, I. Inoue, C. S. Hwang and T. Mikolajick, “Metal oxide memories based on

thermochemical and valence change mechanisms”, MRS BULLETIN, 37, 131 (2012). (invited

review)

99. J. Joshua Yang, M.-X. Zhang, M. D. Pickett, F. Miao, J. P. Strachan, W. Li, W. Yi, D. A. A. Ohlberg, B. J. Choi, W. Wu, J. H. Nickel, G. Medeiros-Ribeiro and R. Stanley Williams,

“Engineering nonlinearity into memristors for passive crossbar applications”, APPLIED PHYSICS LETTERS, 100, 113501 (2012).

17

100. F. Miao¥, J. P. Strachan¥, J. Joshua Yang¥,*, M.-X. Zhang, I. Goldfarb, A. C. Torrezan,

P. Eschbach, R. D. Kelley, G. Medeiros-Ribeiro and R. S. Williams*, “Anatomy of a nanoscale

conduction channel reveals the mechanism of a high-performance memristor” ADVANCED

MATERIALS, 23, 5633 (2011).

101. F. Miao, J. Joshua Yang*, J. Borghetti, G. Medeiros-Ribeiro, and R. S. Williams,

“Observation of two resistance switching modes in TiO2 memristive devices electroformed at

low current” NANOTECHNOLOGY, 22, 254007 (2011).

102. B.J. Choi., J. Joshua Yang* J. H. Nickel, J. P. Strachan, M. D. Pickett, and R. Stanley

Williams, “Nitride Memristors”, APPLIED PHYSICS A 109, 1 (2012).

103. B. J. Choi, A. C. Torrezan, K. J. Norris, F. Miao, J. P.Strachan, M.-X. Zhang, D. A. A.

Ohlberg, N. P. Kobayashi, J. Joshua Yang,* and R. S. Williams, “Electrical performance and

scalability of Pt dispersed SiO2 nanometallic resistance switch”, NANO LETTERS 13, 3217

(2013).

104. J. Borghetti, G. S. Snider, P. J. Kuekes, J. Joshua Yang, D. R. Stewart and R. S.

Williams, “‘Memristive’ switches enable ‘stateful’ logic operations via material implication”,

NATURE 464, 873 (2010).

105. Sergei Kalinin, J. Joshua Yang and Anna Demming, “Non-volatile memory based on

nanostructures” NANOTECHNOLOGY 22, 250201 (2011).

106. J. J. Blackstock, C. L. Donley, W. F. Stickle, D. A. A. Ohlberg, J. Joshua Yang, D. R.

Stewart, and R. S. Williams, “Oxide and Carbide Formation at Titanium/Organic Monolayer

Interfaces”, JOURNAL OF AMERICAN CHEMICAL SOCIETY 130, 4041 (2008).

107. Q. Xia, J. Joshua Yang, W. Wu, X. Li and R. S. Williams, " Self-aligned memristive

cross-point arrays fabricated with one nanoimprint lithography step" NANO LETTERS 10,

2909 (2010).

108. J. P. Strachan, J. Joshua Yang, G. Medeiros-Ribeiro, D. Stewart, and R. S. Williams,

“Structural and chemical characterization of TiO2 memristive devices by spatially-resolved

NEXAFS studies”, NANOTECHNOLOGY 20, 485701 (2009).

109. R. Münstermann, J. Joshua Yang, J. P. Strachan, G. Medeiros-Ribeiro, R. Dittmann,

and R. Waser, “Morphological and electrical changes in TiO2 memristive devices induced by

electroforming and switching”, PHYS. STATUS. SOLIDI RRL 4, 16 (2010).

110. W. M. Tong, J. Joshua Yang, P. J. Kuekes, D. R. Stewart, R. S. Williams, E. DeIonno,

E. E. King, S. C. Witczak and J. V. Osborn, “Radiation hardness of TiO2 memristive junctions”

IEEE TNS 57, 1640 (2010). 111. P. F. Ladwig, J. Joshua Yang, Y. A. Chang, F. Liu, B. B. Pant, A. E. Schultz, “Selective

oxidation of an individual layer in a magnetic tunnel junction through the use of thermodynamic

control”, APPLIED PHYSICS LETTERS 87, 061901 (2005).

112. F. Miao, J. Joshua Yang, J. P. Strachan D. Stewart, R. S. Williams and C. N. Lau,

“Force modulation of tunnel gaps in metal oxide memristive nanoswitche”, APPLIED PHYSICS LETTERS, 95, 113503 (2009).

113. M. L. Huang, J. Joshua Yang, Y. A. Chang, R. Ragan, Y. Chen, D. A. A. Ohlberg, R.

S. Williams, “Phase stabilities of ternary rare earth metal disilicides”, APPLIED PHYSICS A 78,

1 (2004).

114. C. Ji, J. Joshua Yang, A. K. Bengtson, D. Morgan, H. Xiang, Y. A. Chang, M. S.

Rzchowski, “Effect of tetragonal lattice distortion of Co70Fe30 on the tunneling

magnetoresistance of AlOx”, APPLIED PHYSICS A 97, 73 (2009). 115. J P. Strachan, M. D. Pickett, J. Joshua Yang, S. Aloni, A. L. D. Kilcoyne, G. Medeiros-

Ribeiro, and R. S. Williams, “Direct identification of the conducting channels in a functioning

memristive device”, ADVANCED MATERIALS 22, 3573 (2010).

116. Y. Yang, Y. A. Chang, J. Joshua. Yang, C.-X. Ji, P. F. Ladwig, F. Liu, B. B. Pant and

A. E. Schultz, “Thermal stability of the interfaces between Co, Ni and Fe based ferromagnets

in contact with selected nitrides MN (M = Al, B, Nb, Ta, Ti and V)”, JOURNAL OF APPLIED

PHYSICS 98, 053907 (2005).

18

117. C.-X. Ji, M. L. Huang, J. Joshua Yang, Y. A. Chang, R. Ragan, Y. Chen, D. A. A.

Ohlberg, R. S. Williams, “Vacancy concentrations in binary rare-earth disilicides with the

aluminum diboride structure”, APPLIED PHYSICS A 78, 287 (2004).

118. J. P. Strachan, D. B. Strukov, J. Borghetti, J. Joshua Yang, G. Medeiros-Ribeiro, R. S.

Williams, “The switching location of a bipolar memristor: chemical, thermal and structural

mapping”, NANOTECHNOLOGY 22, 254015 (2011).

119. Q. Xia,W. Robinett, M. W. Cumbie, N. Banerjee, T. J. Cardinali, J. Joshua Yang, W.

Wu, X. Li,W. M. Tong, D. B. Strukov, G. S. Snider, G. Medeiros-Ribeiro, and R. S. Williams,

“Memristor-CMOS hybrid integrated circuits for reconfigurable logic” NANO LETTERS 9,

3640 (2009).

120. R. Ragan, Y. Chen, D. A.A. Ohlberg, J. Joshua Yang and Y. A. Chang, “Engineering

densely packed arrays of rare earth silicide nanowires on Si(001)”, IEEE-NANO 2003 2, 208

(2003).

121. C-X. Ji, , F. Lu, Y. A. Chang, J. Joshua Yang, M. Rzchowski, “Growth and physical

property of epitaxial Co70Fe30 thin film on Si substrate via TiN buffer”, APPLIED PHYSICS LETTERS 92, 022504 (2008).

122. H. Xiang, C.-X. Ji, J. Joshua Yang, Y. Austin Chang, “Compositional effect of bcc

Co100−xFex electrodes on magnetoresistance in AlOx-based magnetic tunnel junctions” APPLIED PHYSICS A 98, 707 (2010).

123. J. L. Borghetti, D. B. Strukov, M. D. Pickett, J. Joshua Yang and R. S. Williams,

“Electrical transport and thermometry of electroformed titanium dioxide memristive switches”

JOURNAL OF APPLIED PHYSICS 106, 124504 (2009). 124. M. Pickett, D. Strukov , J. L. Borghetti , J. Joshua Yang , G. Snider , D. R. Stewart

and R. S. Williams, “Switching dynamics in a titanium dioxide memristive device” JOURNAL

OF APPLIED PHYSICS 106, 074508 (2009).

125. C. X. Ji, P. E. Ladwig, R. D. Ott, Y. Yang, J. Joshua Yang, Y. A. Chang, E. S. Linville,

J. Gao, and B. B. Pant, “An investigation of phase transformation behavior in sputter-deposited

PtMn thin films”, JOURNAL OF THE MINERALS METALS AND MATERIALS SOCIETY 58,

50 (2006).

126. Q. Xia, M. D. Pickett, J. Borghetti, J. Joshua Yang, X. Li, W. Wu, G. Medeiros-Ribeiro

and R. S. Williams, “Impact of geometry on the performance of memristive nanodevices”

NANOTECHNOLOGY 22, 254026 (2011).

127. Wei Yi, Frederick Perner, M. Shakeel Qureshi, Hisham Abdalla, Matthew D. Pickett,

J. Joshua Yang, Gilberto Medeiros-Ribeiro, R. Stanley Williams, “Feedback write scheme for

memristive switching devices”, APPLIED PHYSICS A 102, 973 (2010).

128. Q. Xia, M. D. Pickett, J. Joshua Yang, X. Li, W. Wu, G. Medeiros-Ribeiro and R. S.

Williams, "Two- and Three-Terminal Resistive Switches: Nanometer-scale Memristors and

Memistors", ADVANCED FUNCTIONAL MATERIALS 21, 2660 (2011).

129. M. D. Pickett, J. Borghetti, J. Joshua Yang, G. Medeiros-Ribeiro and R. S. Williams,

"Coexistence of memristance and negative differential resistance in a nanoscale metal-oxide-

metal system", ADVANCED MATERIALS 23, 1730 (2011).

130. P. Fernández-Siles, B. S. Archanjo, D. L. Baptista, J. Joshua Yang, B. R. A. Neves, G.

Medeiros-Ribeiro, "Nanoscale Lateral switchable rectifiers fabricated by Local Anodic

Oxidation", JOURNAL OF APPLIED PHYSICS 110, 024511 (2011).

131. F. Miao, W. Yi, I. Goldfarb, J. Joshua Yang, M.-X. Zhang, M. D. Pickett, J. P.

Strachan, G. Medeiros-Ribeiro, and R. S. Williams, “Continuous electrical tuning of chemical

composition of TaOx-based memristors”, ACS NANO 6, 2312 (2012).

132. F. Y. Shi, H. Xiang, J. Joshua Yang, M. S. Rzchowski, Y. A. Chang, and P. M.

Voyles, “Inverse TMR in a nominally symmetric CoFe/AlOx/CoFe junction induced by

interfacial Fe3O4 investigated by STEM-EELS”, JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS 324, 1837 (2012).

133. L. Zhang, Z. Chen, J. Joshua Yang, B.Wysocki, N. McDonald, and Y. Chen, “A

compact modeling of TiO2-TiO2–x memristor”, APPLIED PHYSICS LETTERS 102,103503

(2013).

19

134. J. P. Strachan, A. C. Torrezan, F. Miao, M. D. Pickett, J. Joshua Yang, W. Yi, G.

Medeiros-Ribeiro, and R. S. Williams, “State Dynamics and Modeling of Tantalum Oxide

Memristors”, IEEE TRANSACTIONS ON ELECTRON DEVICES 60, 2194 (2013).

135. P. R. Mickel, A. J. Lohn, B. J. Choi, J. Joshua Yang, M.-X. Zhang, M. J. Marinella,

C. D. James, and R. S. Williams, “A physical model of switching dynamics in tantalum oxide

memristive devices”, APPLIED PHYSICS LETTERS 102, 223502 (2013).

136. I. Goldfarb, D. A. A. Ohlberg, J. P. Strachan, M. D. Pickett, J. Joshua Yang, G.

Medeiros-Ribeiro, and R. S. Williams, “Band offsets in transition-metal oxide heterostructures”,

JOURNAL OF PHYSICS: D 46, 295303 (2013).

137. I. Goldfarb, F. Miao, Joshua Yang, W. Yi, J. Strachan, M. X. Zhang, M. Pickett, G.

Medeiros-Ribeiro, and R. Williams, “Electronic structure and transport measurements of

amorphous transition-metal oxides: observation of Fermi glass behavior”, APPLIED PHYSICS

A 107, 1 (2012).

138. J.-W. Han, B. J. Choi, J. Joshua Yang, D.-I Moon, Y.-K. Choi, R S. Williams and M

Meyyappan, “A replacement of high-k process for CMOS transistor by atomic layer

deposition”, SEMICONDUCTOR SCIENCE AND TECHNOLOGY 28, 082003 (2013).

139. J. P. Strachan, J. Joshua Yang, L. A. Montoro, C. A. Ospina, A. J. Ramirez, A. L. D.

Kilcoyne, G. Medeiros-Ribeiro, and R. S. Williams, “Characterization of electroforming-free

titanium dioxide memristors”, BEILSTEIN JOURNAL OF NANOTECHNOLOGY 4, 467

(2013).

140. N. Ge, M-X Zhang, L. Zhang, J. Joshua Yang*, Z. Li, and R S. Williams, “Electrode-

material dependent switching in TaOx memristors”, SEMICOND. SCI. TECHNOL. 29, 104003

(2014).

Conference proceedings: 141. Q. Xia, W. M. Tong, W. Wu, J. Joshua Yang, X. Li, W. Robinett, T. Cardinali, M.

Cumbie, J. E. Ellenson, P. Kuekes, R. S. Williams, "On the integration of memristors with

CMOS using nanoimprint lithography", In SPIE Advanced Lithography, pp. 727106

International Society for Optics and Photonics, (2009).

142. D. Strukov, D. Stewart, J. Borghetti, X. Li, M. Pickett, G. Medeiros-Ribeiro, W.

Robinett, G. Snider, J. Strachan, W. Wu, Q. Xia, J. Joshua Yang, R. S. Williams, “Hybrid

CMOS/Memristor circuits”, PROCEEDING OF THE IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS 2010), 1967 (2010).

143. C. J. Xue, Y. Zhang, Y. Chen, G. Sun, J. Joshua Yang, H. Li, “Emerging Non-Volatile

Memories: Opportunities and Challenges”, PROCEEDING OF CODES+ISSS, 325 (2011).

144. G. Medeiros-Ribeiro, J. H. Nickel, J. Joshua Yang, “Progress in CMOS-memristor

integration”, PROCEEDING OF THE INTERNATIONAL CONFERENCE ON COMPUTER-

AIDED DESIGN (ICCAD) (2011).

145. W. G. Kim, H. M. Lee, B. Y. Kim, K. H. Jung, T. G. Seong, S. Kim, H. C. Jung, H. J.

Kim, J. H. Yoo, H. D. Lee, S. G. Kim, S. Chung, K. J. Lee, J. H. Lee, H. S. Kim, S. H. Lee, J.

Joshua Yang, Y. Jeon, and R. S. Williams, “NbO2-based Low Power and Cost Effective

1S1R Switching for High Density Cross Point ReRAM Application”, 2014 Symposium on

VLSI Technology (VLSI-Technology): Digest of Technical Papers (2014).

146. L. Hyung Dong, S. G. Kim, K. Cho, H. Hwang, H. Choi, J. Lee, S. H. Lee, H. J. Lee,

J. Suh, S. Chung, Y. S. Kim, K. S. Kim, W. S. Nam, J. T. Cheong, J. T. Kim, S. Chae, E.

Hwang, S. N. Park, Y. S. Sohn, C. G. Lee, H. S. Shin, K. J. Lee, K. Hong, H. G. Jeong, K. M.

Rho, Y. K. Kim, J. Nickel, J. Joshua Yang, H. S. Cho, F. Perner, R. S. Williams, J. H. Lee, S.

K. Park, and S. Hong, “Integration of 4F2 selector-less crossbar array 2Mb ReRAM based on

transition metal oxides for high density memory applications”, In VLSI Technology (VLSIT),

2012 Symposium on, pp. 151-152. IEEE, (2012).

147. G. Medeiros Ribeiro, J. Joshua Yang, Janice Nickel, Antonio Torrezan, John Paul

Strachan and R. Stan Williams, “Designing memristors: physics, materials science and

20

engineering”, In 2012 IEEE International Symposium on Circuits and Systems, pp. 2513-2516.

IEEE, (2012).

148. J. Joshua Yang*, M.-X. Zhang, F. Miao, J. P. Strachan, A. C. Torrezan, M. D. Pickett,

W. Yi, B. J. Choi, J. H. Nickel, G. Medeiros-Ribeiro and R. S. Williams, “Oxide based

memristive devices”, In 2012 IEEE 11th International Conference on Solid-State and Integrated

Circuit Technology (2012).

149. J. Joshua Yang*, B. J. Choi, M.-X. Zhang, A. C. Torrezan, J. P. Strachan and R. S.

Williams, “Memristive devices for computing: mechanisms, applications and challenges”, ECS Transactions 58, no. 9: 9-14 (2013).

150. B. J. Choi, N. Ge, J. Joshua Yang*, M.-X. Zhang, J. P. Strachan, R. S. Williams, K.

Norris, N. Kobayashi, “New materials for memristive switching”, In 2014 IEEE International

Symposium on Circuits and Systems (ISCAS), pp. 2808-2811. IEEE, (2014).

151. X. Liu; M. Mao, H. Li, Y. Chen, H. Jiang, J. Joshua Yang, Q. Wu, M. Barnell, “A

heterogeneous computing system with memristor-based neuromorphic accelerators”, in High

Performance Extreme Computing Conference (HPEC), 2014 IEEE , pp.1-6, 9-11 (2015).

Book chapters:

152. J. Joshua Yang*, G. Medeiros-Ribeiro, “Oxide Based Memristive

Nanodevices”, In Emerging Non-Volatile Memories (pp. 219-256). Springer US)

(2014).

Patents (115 Granted + over 60 pending):

Patents granted: 1. United States Patent US7,450,352, 2008, “Fabrication of magnetic tunnel junctions with

epitaxial and textured ferromagnetic layers”, Y. A. Chang, and J. Joshua Yang.

2. United States Patent US7,579,042, 2009, “Methods for the fabrication of thermally stable

magnetic tunnel junctions”, Y. A. Chang, J. Joshua Yang and P. F. Ladwig.

3. United States Patent US7,985,962, 2011, “Memristive device”, A. M. Bratkovski, D. Ohlberg,

J. Joshua Yang.

4. United States Patent, US8,093,575, 2011, “Memristive device with a bi-metallic electrode”, Q.

Xia, X. Li, J. Joshua Yang.

5. United States Patent, US8,063,395, 2011, “Memristor amorphous metal alloy electrodes”, Q.

Xia, J. Joshua Yang, S. Y. Wang.

6. United States Patent US8,207,593, 2012, “Memristor having a nanostructure in the switching

material” A. M. Bratkovski, J. Joshua Yang, Q. Xia.

7. United States Patent US8,203,171, 2012, “Defective graphene-based memristor” J. Joshua

Yang, F. Miao, W. Wu, S.-Y. Wang, R. S. Williams.

8. United States Patent US8,207,520, 2012, “Programmable crosspoint device with an integral

diode” J. Joshua Yang, G. M. Ribeiro, R. S. Williams.

9. United States Patent US8,283,649, 2012, “Memristor with a non-planar substrate” A. M

Bratkovski, S.-Y. Wang, J. Joshua Yang, M. Stuke.

10. United States Patent US8,264,868, 2012, “Memory array with metal-insulator transition

switching devices” G. M. Ribeiro, Pickett, Matthew, J. Joshua Yang.

11. United States Patent US8,259,485, 2012, “Multilayer structures having memory elements with

varied resistance of switching layers” J. Joshua Yang, J. P. Strachan, W. Wu.

12. United States Patent US8,294,132, 2012, “Graphene memristor having modulated graphene

interlayer conduction” F. Miao, J. Joshua Yang, W. Wu, S.-Y. Wang, R. S. Williams.

13. United States Patent US8,226,3521, 2012, “Memristors with an electrode metal reservoir for

dopants” J. Joshua Yang, W. Yi, M. Stuke, S.-Y. Wang.

14. United States Patent US8,225,8304, 2012, “Guided mode resonator based raman enhancement

apparatus” W. Wu, Q. Xia, J. Li, J. Joshua Yang.

21

15. United States Patent US8,226,4724, 2012, “Changing a memristor state” F. Miao, J. Joshua

Yang, G. M. Ribeiro, R. S. Williams.

16. United States Patent USPTO US8,324,976 B2, 2012, “Oscillator circuitry having negative

differential resistance” J. Borghetti, M. D. Pickett, G. Medelros-Ribeiro, W. Yi, J. Joshua

Yang, M. Zhang.

17. United States Patent US8,385,101, 2013, “Memory resistor having plural different active

materials” J. Joshua Yang, M. Zhang, R. S. Williams.

18. United States Patent USPTO US8,415,652, 2013, “Memristors with a switching layer

comprising a composite of multiple phases” J. Joshua Yang, G. M. Ribeiro, R. S. Williams.

19. United States Patent USPTO US8,437,172, 2013, “Decoders using memristive switches”

M.Fiorentino, W. M. Tong, P. J. Kuekes, J. Joshua Yang.

20. United States Patent USPTO US8,437,072, 2013, “Individually addressable nano mechanical

actuator and contact switch by redox reaction in a crossbar array” J. Joshua Yang, R. S.

Williams, W. M. Tong.

21. United States Patent USPTO US8,450,711, 2013, “Semiconductor memristor devices” R. S.

Williams, J. Joshua Yang, D. R. Stewart.

22. United States Patent USPTO US8,455,852, 2013, “Controlled placement of dopants in

memristor active regions” N. J. Quitoriano, P. J. Kuekes, J. Joshua Yang.

23. United States Patent USPTO US8,487,289, 2013, “Electrically actuated device” J. Joshua

Yang, M. Zhang, G. Medelros-Ribeiro.

24. United States Patent USPTO US 8,525,146, 2013, “Electrical circuit component” W. Wu, M.

D. Pickett, J. Joshua Yang, Q. Xia, G. Medeiros Ribeiro.

25. United States Patent USPTO US8,525,553, 2013, “Negative differential resistance comparator

circuits” M. D. Pickett, J. Joshua Yang, M. Zhang.

26. United States Patent USPTO US8,519,372, 2013, “Electroforming-free nanoscale switching

device” J. Joshua Yang, S.-Y. Wang, R. S. Williams, A. Bratkovski, G. Medeiros Ribeiro.

27. United States Patent USPTO US8,530,873, 2013, “Electroforming free memristor and method

for fabricating thereof” J. Joshua Yang, G. Medeiros Ribeiro, R. S. Williams.

28. United States Patent USPTO US8,546,785, 2013, “Memristive device” J. Joshua Yang, F.

Miao, W. Wu, S.-Y. Wang, R. S. Williams.

29. United States Patent USPTO US8,575,585, 2013, “Memristive device” J. Joshua Yang, Q. Xia,

A. A. Bratkovski.

30. United States Patent USPTO US8,570,138, 2013, “Resistive Switches” J. Joshua Yang, D. B.

Strukov, S. Y. Wang.

31. United States Patent USPTO US8,586,959, 2013, “Memristive switch device” M. D. Pickett, J.

Joshua Yang, D. B. Strukov.

32. United States Patent USPTO US8,587,985, 2013, “Memory array with graded resistance lines”

J. Joshua Yang, J. P. Strachan, W. Wu, Janice H. Nickel.

33. United States Patent USPTO US8,710,483 B2, 2014, “Memristive junction with intrinsic

rectifier” J. Joshua Yang, J. P. Strachan, M. D. Pickett.

34. United States Patent USPTO US8,710,865, 2014, “Field-programmable analog array with

memristors” J. Joshua Yang, M. S. Qureshi, G. Medeiros-Ribeiro, R. S. Williams.

35. United States Patent USPTO US8,711,594, 2014, “Asymmetric switching rectifier” M.-X.

Zhang, J. Joshua Yang, R. S. Williams.

36. United States Patent USPTO US8,737,113, 2014, “Memory resistor having multi-layer

electrodes” J. Joshua Yang, W. Wu, R Gilberto-Ribeiro.

37. United States Patent USPTO US9,018,083 B2, 2014, “Electrically actuated device and method

of controlling the formation of dopants therein” J. Joshua Yang, D. Stewart, P. J. Kuekes, W.

M. Tong.

38. United States Patent USPTO US8,767,438, 2014, “Memelectronic Device” J. Joshua Yang, B. J. Choi, M. -X. Max Zhang, G. Medeiros-Ribeiro, R. S. Williams.

39. United States Patent USPTO US8,766,231, 2014, “Nanoscale Electronic Device with Barrier

Layers” Wei Yi, J. Joshua Yang, G. Medeiros-Ribeiro.

22

40. United States Patent USPTO US8,779,409, 2014, “Low energy memristors with engineered

switching channel materials” J. Joshua Yang, M.-X. Zhang, G. Medeiros-Ribeiro, R. S.

Williams.

41. United States Patent USPTO US8,779,848, 2014, “Two terminal memcapacitor device” M. D.

Pickett, J. Borghetti, J. Joshua Yang.

42. United States Patent USPTO US8,891,284, 2014, “Memristors based on mixed-metal-valence

compounds” R. S. Williams, J. Joshua Yang, M. D. Pickett, G. Medeiros-Ribeiro, J. P.

Strachan.

43. United States Patent USPTO US8,809,158, 2014, “Device having memristive memory” M. D.

Pickett, J. Joshua Yang, G. Medeiros-Ribeiro.

44. United States Patent USPTO US8,829,581, 2014, “Resistive memory devices” S. Y. Wang, J.

Joshua Yang, A. A. Bratkovski, R. S. Williams.

45. United States Patent USPTO US8,923,034, 2014, “Multi-level memory cell with continuously

tunable switching” Y. Wei, F. Miao, J. Joshua Yang.

46. United States Patent USPTO US8,872,153, 2014, “Device structure for long endurance

memristors” J. Joshua Yang, M.-X. Zhang, R.S. Williams.

47. United States Patent USPTO US8,882,217, 2014, “Printhead assembly including memory

elements” P. V. Lea, G. M. Ribeiro, M. D. Pickett, J. Joshua Yang.

48. United States Patent USPTO US8,879,300, 2014, “Switchable two-terminal devices with

diffusion/drift species” J. Joshua Yang, W. Wu, Q. Xia.

49. United States Patent USPTO US8,878,342, 2014, “Using alloy electrodes to dope memristors”

N. J. Quitoriano, D. Ohlberg, P. J. Kuekes, J. Joshua Yang.

50. United States Patent USPTO US8,890,106, 2014, “Hybrid circuit of nitride-based transistor and

memristor” J. Joshua Yang, G. Medeiros-Ribeiro, B. J. Choi, R. S. Williams.

51. United States Patent USPTO US8,912,520, 2014, “Nanoscale switching device” J. Joshua

Yang, M. D. Pickett, G. Medeiros-Ribeiro.

52. United States Patent USPTO US8,921,960, 2015, “Memristor cell structures for high density

arrays” J. Joshua Yang, M. X. Zhang, G. Medeiros-Ribeiro, R. S. Williams.

53. United States Patent USPTO US9,082,533, 2015, “Memristive element based on hetero-

junction oxide” J. Joshua Yang, M. X. Zhang, R. S. Williams.

54. United States Patent USPTO US9,159,476 B2, 2015, “Negative differential resistance device”

J. Joshua Yang, M. X. Zhang, R. S. Williams.

55. United States Patent USPTO US9,000,411 B2, 2015, “Memristor devices configured to control

bubble formation” Z. Li, A. M. Bratkovski, J. Joshua Yang.

56. United States Patent USPTO US8,766,228, 2014, “Electrically actuated device and method of

controlling the formation of dopants therein” J. Joshua Yang, D. R. Stewart, P. J. Kuekes, W.

M. Tong.

57. United States Patent USPTO US9,024,285, 2015, “Nanoscale switching devices with partially

oxidized electrodes” J. Joshua Yang, G. M. Ribeiro, R. S. Williams.

58. United States Patent USPTO US9,466,793, B2, 2015, “Memristors having at least one junction”

H. S. Cho, J. Joshua Yang, J. H. Nickel.

59. United States Patent USPTO US9,041,157, B2, “Method for doping an electrically actuated

device” W. Wu, S. V. Mathai, S-Y. Wang, J. Joshua Yang.

60. United States Patent USPTO US9,040,285 B2, 2015, “Nanoscale switching device” G.

Medeiros-Ribeiro, J. H. Nickel, J. Joshua Yang.

61. United States Patent USPTO US9,082,972 B2, 2015, “Bipolar resistive switch heat mitigation”

J. P. Strachan, G. Medeiros Ribeiro, J. Joshua Yang, W. Yi.

62. United States Patent USPTO US9,196,354, 2015, “Memory resistor adjustment using feedback

control” J. P. Strachan, J. Borghetti, M. D. Pickett, G. Ribeiro, J. Joshua Yang.

63. United States Patent USPTO US9,184,213, 2015, “Nanoscale switching device” J. Joshua

Yang, D. B. Strukov, W. Wu.

64. United States Patent USPTO US9,184,382, 2015, “Memristive devices with layered junctions

and methods for fabricating the same” M. D. Pickett, J. Joshua Yang, G. Medeiros-Ribeiro.

23

65. United States Patent USPTO US9,178,153, 2015, “Memristor structure with a dopant source”

M. X. Zhang, J. Joshua Yang, R. S. Williams.

66. United States Patent USPTO US9,171,613, 2015, “Memristors with asymmetric electrodes” A.

M. Bratkovski, J. Joshua Yang, S.-Y. Wang, M. Stuke.

67. United States Patent USPTO US9,165,645, 2015, “High-reliability high-speed memristor” F.

Miao, J. Joshua Yang, J. P. Strachan, W. Yi, G. Medeiros-Ribeiro, R S. Williams.

68. United States Patent USPTO US8,982,601 B2, 2015, “Switchable junction with an intrinsic

diode formed with a voltage dependent resistor” J. Joshua Yang, J. P. Strachan, J. Borghetti,

M. D. Pickett.

69. United States Patent USPTO US9,224,949 B2, 2015, “Memristive elements that exhibit

minimal sneak path current” J. Joshua Yang, M. X. Zhang, R. S. Williams.

70. United States Patent USPTO US9,257,645 B2, 2016, “Memristors having mixed oxide phases”

J. Joshua Yang, M. X. Zhang, F. Miao.

71. United States Patent USPTO US9,293,200 B2, 2016, “Multilayer memory array” J. H. Nickel,

G. Medeiros-Ribeiro, J. Joshua Yang.

72. United States Patent USPTO US9,331,278 B2, 2016, “Forming memristors on imaging devices”

J. Joshua Yang, N. Ge, Z. Li, M. X. Zhang.

73. United States Patent USPTO US9,276,204 B2, 2016, “Memristor with channel region in thermal

equilibrium with containing region” F. Miao, J. Joshua Yang, J. P. Strachan, W. Yi, G.

Medeiros Ribeiro, R. Stanley Williams.

74. United States Patent USPTO US9,224,821 B2, 2015, “Customizable nonlinear electrical

devices” M. X. Zhang, J. Joshua Yang, G. Medeiros Ribeiro, R. S. Williams.

75. United States Patent USPTO US9,478,738 B2, 2016, “High-reliability high-speed memristor”

F. Miao, J. Joshua Yang, J. P. Strachan, W. Yi, G. Medeiros Ribeiro, R. S. Williams.

76. United States Patent USPTO US9,508,928 B2, 2016, “Nanochannel array of nanowires for

resistive memory devices” S.-Y. Wang, J. Joshua Yang.

77. United States Patent USPTO US9,558,869, 2017, “Negative differential resistance device” J.

Joshua Yang, M. Zhang, R. S. Williams.

78. United States Patent USPTO US9,847,124 B2, 2017, “Resistive elements to operate as a matrix

of probabilities”, M. Hu, J. P. Strachan, G. Ning, J. Joshua Yang.

79. United States Patent USPTO US9,847,378 B2, 2017, “Resistive memory devices with a multi-

component electrode” X. Sheng, Y. Jeon, J. Joshua Yang, H. S. Cho, R. H. Henze.

80. United States Patent USPTO US9,776,400 B2, 2017, “ Printhead with a number of memristor

cells and a parallel current distributor” N. Ge, J. Joshua Yang, Z. Li.

81. United States Patent USPTO US9,701,115 B2, 2017, “Printheads having memories formed

thereon” J. Joshua Yang, N. Ge, Z. Li.

82. United States Patent USPTO US9, 793,322 B2, 2017, “Apparatus having first and second

switching materials” N. Ge, J. Joshua Yang, R. S. Williams, K. M. Kim.

83. United States Patent USPTO US9,793,473, B2, 2017 “Memristor structures” S. Y. Wang, J.

Joshua Yang, M. M. Zhang, A. M. Bratkovski.

84. United States Patent USPTO US9,885,937 B2, 2018, “Dynamical optical crossbar array” J.

Joshua Yang, A. M. Bratkovski, D. A. Fattal, M. Zhang.

85. United States Patent USPTO US9,870,822 B2, 2018, “Non-volatile memory element with

thermal-assisted switching control” G. Ning, J. Joshua Yang, Z. Li.

86. United States Patent USPTO US9,947,405 B2, 2018 “Memristive dot product engine with a

nulling amplifier” J. P. Strachan, G. E. Montgomery, N. Ge, M. Hu, J. Joshua Yang.

87. United States Patent USPTO US9,911,789 B2, 2018 “1-Selector n-Resistor memristive

devices” J. Joshua Yang, G. Gibson, Z. Li.

88. United States Patent USPTO US9,911,490 B2, 2018 “Memory controllers” N. Ge, J. Joshua

Yang, F. Perner, J. H. Nickel. 89. United States Patent USPTO US9, 889,659 B2, 2018 “Printhead with a memristor” N. Ge, J.

Joshua Yang, M. Zhang.

24

90. United States Patent USPTO US9,934,852 B2, 2018 “Sensing an output signal in a crossbar

array based on a time delay between arrival of a target output and a sneak output” K. M. Kim,

N. Ge, J. Joshua Yang.

91. United States Patent USPTO US9, 911,915 B2, 2018 “Multiphase selectors” J. Joshua Yang,

Y. Jeon, H. S. Cho.

92. United States Patent USPTO US9,934,849 B2, 2018 “Asymmetrically selecting memory

elements” K. M. Kim, J. Joshua Yang, Z. Li.

93. United States Patent USPTO US9, 911,788 B2, 2018 “Selectors with oxide-based layers” J.

Joshua Yang, Ning Ge, Zhiyong Li.

94. EP 2,842,163 B1, 2018 “Nonlinear memristors” J. Joshua Yang, M. Zhang, M. D. Pickett, R.

S. Williams.

95. United States Patent USPTO US10, 026,896 B2, 2018 “Mutilayered Memristors” W. Jackson,

J. Joshua Yang, K. M. Kim, Z. Li.

96. United States Patent USPTO US10, 026, 477 B2, 2018 “Selector relaxation time reduction” J.

Joshua Yang, N. Ge, J. P. Strachan, G. Gibson, W. Jackson.

97. United States Patent USPTO US10, 026, 894 B2, 2018 “Memristors with oxide switching

layer” N. Ge, J. Joshua Yang, M. Zhang, K. Samuels.

98. United States Patent USPTO US10, 008, 264 B2, 2018 “Memristor corss-bar array for

determining a dot product” N. Ge, J. Joshua Yang, J. P. Strachan, M. Hu.

99. United States Patent USPTO US10, 056, 142 B2, 2018 “Generating a representative logic

indicator of grouped memristors” N. Ge, J. Joshua Yang, Z. Li, R. S. Williams.

100. United States Patent USPTO US10, 076, 904 B2, 2018 “Integrated circuit devices

comprising memristors” J. Joshua Yang, N. Ge, Z. Li.

101. United States Patent USPTO US10, 096, 651 B2, 2018 “Resistive memory devices

and arrays” J. Joshua Yang, N. Ge, k. Samuels, M. Zhang.

102. United States Patent USPTO US10, 074, 695 B2, 2018 “Negative differential

resistance (NDR) device based on fast diffusive metal atoms” J. Joshua Yang, R. S.

Williams, M. Zhang, Z. Li.

103. United States Patent USPTO US10, 186, 660 B2, 2018 “Memristor device” Q. Xia,

H. Jiang, J. Joshua Yang.

104. WO EP US KR TW TWI622989B, 2019, “Temperature compensation circuits”

N. Ge, J. Joshua Yang, M. Hu, J. P. Strachan.

105. WO US TW TWI611403B, 2018, “A resistive random-access memory in

printed circuit board” N. Ge, V. Nguyen, J. Joshua Yang, C. Hua, L. Warnes, D. B

Fujii

106. WO US US20180075904A1, 2018, “Memristive crossbar array having multi-

selector memristor cells” N. Ge, J. Joshua Yang, Z. Li, R. S. Williams

107. WO US US20180017870A1, “Dynamic logic Memcap” N. Ge, Z. Li, J.

Joshua Yang, R. S. Williams

108. US10,181, 349 B2, “Nonvolatile memory cross-bar array” N. Ge, J. Joshua

Yang, J. P. Strachan, M. Hu

109. US10, 109, 348, B2, “Double bias memristive dot product engine for vector

processing” M. Hu, J. Joshua Yang, J. P. Strachan, N. Ge

110. US10, 147, 762 B2, “Protective elements for non-volatile memory cells in

crossbar arrays” M. Zhang, J. Joshua Yang, R. S. Williams

111. US10, 249, 356 B2, “Memcapacitive cross-bar array for determining a dot

product” N. Ge, J. P. Strachan, J. Joshua Yang, H. Miao. 112. EP2997597B1, 2018, “Nanochannel array of nanowires for resistive memory devices”

S.-Y. Wang, J. Joshua Yang.

113. US10, 319, 441 B2, “Nonvolatile memory cross-bar array” N. Ge, J. Joshua

Yang, J. P. Strachan, H. Miao.

25

114. US10, 325, 655 B2, “Temperature compensation circuits” N. Ge, J. Joshua

Yang, H. Miao, J. P. Strachan.

115. US10, 262, 733 B2, “Memristive dot product engine for vector processing” J.

Joshua Yang, H. Miao, J. P. Strachan.N. Ge.

Invited/Plenary/Keynote Talks:

International conferences:

1. The 10th Non-volatile memory technology symposium (NVMTS09) 2009, Portland, Oregon.

2. “Oxide based memristive nanodevices” 2009, International Conference on Communications,

Circuits and Systems 2009 (ICCCAS 2009) San Jose, California.

3. “Metal/oxide/metal memristive devices” 2009, The 7th International Conference on

Advanced Materials and Devices (ICAMD) 2009, Jeju island, KOREA.

4. “Engineering control and applications of oxide based nano-switches”, 2010, International

Symposium on Integrated Functionalities (ISIF) 2010, San Juan, Puerto Rico.

5. “Engineering control over device properties of memristors for immediate applications”, Julius

Springer Forum on Applied Physics 2010, Stanford University, CA.

6. “Promises and challenges of Memristive switches”, 11th Non-Volatile Memory Technology

Symposium 2011, Shanghai, China. (Keynote)

7. “Oxide based memristive devices”, IEEE International Conference on Solid-State and

Integrated Circuit Technology 2012, Xi'an, China.

8. “TaOx based memristive devices”, 12th Non-Volatile Memory Technology Symposium

2012, Singapore.

9. “Memristive nanodevices for computing”, The 57th International Conference on Electron,

Ion, Photon Beam Technology and Nanofabrication (EIPBN) 2013, Tennessee.

10. “Memristive Devices for Computing”, The 224th Electrochemical Society Meeting 2013, ULSI Process Integration Symposium, San Francisco, California. (Keynote)

11. “Memristive Nanodevices”, Nano and Giga 2014, Phoenix, Arizona.

12. “Challenges and Materials Solutions for Memristive Devices (ReRAM)”, MRS Spring 2014,

San Francisco, California.

13. “The material perspective ReRAM” The IEEE International Symposium on Circuits and

Systems (ISCAS) 2014, FEST 2014, Melbourne, Australia. (Keynote)

14. “Tutorial on Memristive devices” the 29th Symposium on on Microeletronics Technology

and Devices 2014 (SBMICRO 2014, Chip in Aracaju), Aracaju, Brazil.

15. “Challenges and solutions of memristors for Neuromorphic Computing” the International

Symposium on Neuromorphic Systems and Cyborg Intelligence 2014, Hangzhou, China.

16. “Materials Perspective of Memristive Devices”, IEEE International Conference on Solid-

State and Integrated Circuit Technology 2014, Guilin, China.

17. “Challenges and Solutions for Memristive Devices”, The AVS 61st International Symposium

& Exhibition 2014, Baltimore, Maryland.

18. “RRAM tutorial”, MRS Fall Meeting 2014, Boston, Mssachusetts.

19. “Memristive Devices (ReRAM): Challenges and Possible Solutions”, MRS Fall Meeting

2015, Boston, Mssachusetts.

20. “Promises and challenges of memristive devices”, 15th International Conference On

Nanotechnology 2015, (IEEE Nano 2015, Rome, Italy.

21. “Memristive nanodevices for computing - challenges and solutions”, China Semiconductor

Technology International Conference 2015 (IEEE CSTIC 2015) 2015, Shanghai, China.

22. “Challenges and possible solutions for memristive devices”, 15th Non-Volatile Memory

Technology Symposium (IEEE NVMTS 2015) 2015, Beijing, China.

23. “Engineering interfaces for memristive devices”, the 43rd Conference on the Physics and

Chemistry of Surfaces and Interfaces (PCSI-43) 2016, Palms Springs, CA.

26

24. “Materials issues in memristive devices”, 145th TMS annual meeting 2016, Nashville,

Tennessee.

25. “Different applications of memristors enabled by selector devices”, China Semiconductor

Technology International Conference (CSTIC) 2016, Shanghai, China. (Keynote)

26. J. Joshua Yang, “Memristor Mate devices”, International Workshop on Information

Storage/10th International Symposium on Optical Storage (IWIS/ISOS 2016)

2016, Changzhou, China. (Keynote)

27. “A versatile two-terminal device enables different applications of resistance switches” The

IEEE International Symposium on Circuits and Systems (ISCAS) 2016, Montréal, Canada.

28. “Challenges and solutions for memristors used for memory and neuromorphic

computing”, 16th Non-Volatile Memory Technology Symposium (IEEE NVMTS

2016) 2016, Pittsburg, Pennsylvania.

29. “Engineered materials for memristor mate” International Conferences on Modern Materials

and Technologies (CIMTEC) 2016, Perugia, Italy.

30. “Engineered materials for memristor mate” 58th Electronic Materials Conference (EMC)

2016, Newark, Delaware.

31. “non-volatile memories” 230th Meeting of Electrochemical Society (ECS) 2016, Honolulu,

Hawaii.

32. “Memristors with diffusive relaxation dynamics for neuromorphic computing”, IEEE 13th

International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

2016, Hangzhou, China.

33. “Memristors with diffusive relaxation dynamics for neuromorphic computing” 16th Non-

Volatile Memory Technology Symposium 2016, Pennsylvania, USA.

34. “Emerging Materials and Technologies for Nonvolatile Memories”, MRS Fall Meeting

2016, Boston, Massachusetts.

35. “Challenges and solutions for memristors used for memory and neuromorphic

computing”, MRS Spring Meeting 2017, Phoenix, Arizona.

36. “Challenges and solutions for memristors used for memory and neuromorphic computing”,

Collaborative Conference on Materials Research (CCMR) 2017, Jeju Island, South Korea.

37. “Diffusive memristors for future computing”, China Semiconductor Technology

International Conference (CSTIC) 2017, Shanghai, China. (Keynote)

38. “Diffusive Memristors” 1st International Conference on Memristive Materials, Devices &

Systems (MEMRISYS) 2017, Athens, Greece. (Plenary)

39. “Diffusive Memristors for Computing”, The 21st International Conference on Solid State

Ionics (SSI-21) 2017, Padua, Italy.

40. “RRAM/memristor for computing” International Symposium on Memory Devices for

Abundant Data Computing 2017, Hongkong (Plenary).

41. “Diffusive Memristors as Artificial Synapses and Neurons for Neural Networks”, MRS Fall

Meeting 2017, Boston, Massachusetts.

42. “Diffusive memristor as an oscillatory neuron for brain inspired computing”, XXVI

International Materials Research Congress 2017, Cancun, Mexico.

43. “Bio-inspired computing with memristive devices”, Neurotalk 2018, Bangkok, Thailand.

44. “Neuromorphic computing with memristive devices and arrays”, Compound

Semiconductor Week (CSW2018) 2018, MIT, Cambridge, USA. 45. “Diffusive memristor for computing”, The IEEE International Symposium on Circuits and

Systems (ISCAS) 2018, Florence, Italy. 46. “Diffusive Memristors for computing”, International Conference on Memristive Materials,

Devices & Systems (MEMRISYS) 2018, Beijing, China. (Keynote)

47. “Neuromorphic computing with memristors”, Nature Conference on Flexible Electronics-

Visions of a Flexible Future 2018, Xi'an, China. (Keynote) 48. “Experimental demonstrations of unconventional computing with memristive devices”, special

session on memristors in the International Conference on Neuromorphic Systems 2018,

Knoxville, Tennessee.

27

49. “Bio-inspired computing with memristive neural networks”, the International Conference on

Neuromorphic Systems 2018, Knoxville, Tennessee. (plenary)

50. “Memristive materials and applications”, The 3rd International Conference on New

Material and Chemical Industry (NMCI) 2018, Sanya, China (2018). (Keynote) 51. “Unconventional computing with memristive devices and arrays” AiMES 2018, Cancun,

Mexico. 52. “Unconventional computing with memristive neural network”, China Semiconductor

Technology International Conference (CSTIC) 2018, Shanghai, China. 53. “Unconventional computing with memristive devices and arrays” ACS Presidential

Symposium 2018, 256th ACS National Meeting, Boston, MA.

54. “Neuromorphic computing with memristive devices and arrays” Solid State Devices and

materials 2018, Tokyo, Japan.

55. “Diffusive memristor for computing”, The 6th Memristor and Memristive Symposium

2018, Budapest, Hungary. (plenary)

56. “Unconventional computing with resistive switching devices”, International Emergent

Memory Symposium (IEMS-2018) 2018, Ji'an, China. (plenary) 57. “Computing with memristive devices and arrays”, China Semiconductor Technology

International Conference (CSTIC) 2019, Shanghai, China.

58. “In Situ Learning with Memristive Neural Networks: Supervised, Unsupervised,

Reinforcement”, International Conference on Memristive Materials, Devices &

Systems (MEMRISYS) 2019, Dresden, Germany. (Plenary)

59. “Tutorials on Neuromorphic computing”, Nature Conference on Neuromorphic

Computing 2019, Beijing, China. (Invited Tutorial)

60. “Neuromorphic computing with dynamics of diffusive memristors”, Nature

Conference on Neuromorphic Computing 2019, Beijing, China. (Invited Talk)

61. “Learning with Resistive Switching Neural Networks”, The IEEE International

Electron Devices Meeting (IEDM) 2019, San Francisco, USA. (Invited)

62. “Materials and devices for neuromorphic computing”, APS March meeting 2020,

Denver, Co.

63. “Materials and Devices for Neuromorphic Computing and Artificial Intelligence”, MRS

Spring meetings 2020, Phoenix, AZ.

64. “Memory Devices for Abundant Data Computing” The 3rd International Symposium

on 2020, Hong Kong. (Plenary)

65. “Brain-inspired Neuromorphic Networks”, Gordon Research Conference on

Multifunctional Materials and Structures 2020, Ventura CA.

International workshops: 66. The memristor at age 40”, 2010, International Symposium on Materials for Enabling

Nanodevices, UCLA, California. （Plenary talk）

67. “Applications and property engineering of memristive nanodevices”, 2010, Advances in

nonvolatile memory materials and devices, Suzhou, China.

68. “Recent progress on oxide based memristive devices in HP”, 2011, Non-volatile memories

worshop, University of California - San Diego, California.

69. “Oxide based memristive devices”, 2011, Frontier of Functional-Oxide Nano Electronics

workshop, Tsukuba, Japan.

70. “TaOx Memristive Nano-devices: Mechanism, Applications and Challenges”, 2012, Advanced

Memory Workshop, NCCAVS Thin Film Users Group, California.

71. “The Memristor” LASERION international workshop, 2013, Munich, Germany.

72. “Memristive Devices for Computing” Global Forum on Nanoelectronic Manufacturing:

From Materials to Systems, 2014 Mumbai, India.

28

73. “Memristive nanodevices for computing - challenges and solutions”, International

workshop Advances in ReRAM: Materials and Interfaces 2015, Crete, Greece. (Keynote)

74. “Experimental demonstration of analog computing and neuromorphic computing with

memristor crossbar arrays” Energy Consequences of Information Workshop, 2017 Santa

Fe, New Mexico.

75. “Unconventional computing using neural network based memristors”, 2017, The 2017

Stephen and Sharon Seiden Frontiers in Engineering & Science Workshop: “Beyond

CMOS: From Devices to Systems”, Haifa, Isreal.

76. “Memristive devices for neuromorphic computing”, the 2017 APS/CNM Users Meeting,

2017, Argonne National Labs, Illinois.

77. “Experimental demonstration of analog computing and neuromorphic computing with

memristor crossbar arrays”, 2017 Energy Consequences of Information (ECI), 2017, Santa

Fe, NM.

78. “Diffusive Memristor based Neural Networks”, 2017, International Workshop on Future

Computing (IWoFC), Beijing, China.

79. “Challenges and possible solutions for RRAM based computing”, 2017, the 7th

International Workshop on Resistive Switching Memory, Leuven, Belgium.

80. “Opportunities and Challenges of Memristive Electroceramics for Computing”, 2017,

Frontiers In Electroceramics Workshop, MIT, Massachusetts.

81. “Resistive/memristive switching devices for computing”, 2017, IEEE-IRDS Beyond

CMOS Workshop, Albuquerque, NM.

Seminars: 82. “Resistance Memory Nanoelectronics”, May/2009, Invited Lecture, UCSC-NASA Ames

Research Center, Mountain View, California.

83. “Oxide based memristive junctions: switching, forming and device family”, 2009, Seminar,

University of California, Santa Cruz, California.

84. Seminar, 2009, Seoul National University, Korea.

85. “Memristive Nanodevices”, 2010, Seminar, Peking University, Beijing, China.

86. “Oxide based nanoswitches”, 2010, Seminar, Chinese Academy of Science, Beijing, China.

87. “Memristors in Computing: Promises and Challenges”, 2011, seminar, IEEE Computer

Society, San Jose California.

88. “Metal oxide based nonvolatile memories - promises and challenges”, 2011, IEEE Electronic

Device Society, Santa Clara, California.

89. “Memristive Nanodevices: mechanism, promises and challenges”, 2012, Seminar, University

of Pittsburgh, Pittsburgh, Pennsylvania.

90. “Oxide based Memristive Nanodevices”, 2012, Seminar, Michigan State University, East

Lansing, Michigan.

91. “Mermistor technology development”, 2012, seminar, Finisar corp. Sunnyvale California.

92. “Memristive Nanodevices: Mechanisms, Applications and Challenges”, 2012, IEEE

SINGAPORE REL/CPMT/ED CHAPTER, Singapore.

93. “Memristive Devices for Computing”, 2013, IEEE SCV Electron Devices Society, Santa

Clara, California.

94. “Memristive nanodevices: mechanisms, promises and challenges”, 2013, seminar, University

of California, Berkeley, California.

95. Special Lecture, AirForce Research Lab, Rome, New York (2013). (Chief Scientist Lecture

Series)

96. “Memristive materials and Devices”, 2014, Seminar, Tsinghua University, Beijing, China.

97. “Resistance switching: applications, mechanisms and challenges”, 2015, Seminar, HGST,

San Jose, California. 98. “Challenges and solutions for memristors used for memory and neuromorphic

computing”, 2016, seminar, Chinese Academy of Science, Beijing.

99. “Memristor applications enabled by selectors”, 2016, seminar, Tsinghua University, Beijing.

29

100. “Diffusive memristor as synaptic emulators for neuromorphic computing”, 2016,

seminar, Peking University, Beijing.

101. “Memristors for computing”, 2017, seminar, Huazhong University of Science and

Technology, Wuhan, China.

102. “Memristive devices for computing: applicsations, challenges and possible

solutions”, 2017, seminar, SUSTC, Shenzhen, China.

103. “Memristive devices for computing”, 2017, Micro-Nano Seminar Series, MIT,

Cambridge.

104. “Bio-inspired computing with memristors” 2018, Zhengzhou University, Zhengzhou,

China.

105. “Unconventional computing with memristors” 2018, Peking University, Beijing,

China.

106. “Bio-inspired computing with Memristor” 2018, Brain and Intelligence summer

school of Tsinghua University, Beijing, China.

107. “Unconventional computing with memristive devices and arrays”, 2018, Northwestern

MRSEC Seminar, Northwestern University, USA.

108. “Unconventional computing with memristive devices and arrays”, 2018, NIST,

Gaithersburg, Maryland.

109. “Neuromorphic computing with memristor crossbar arrays”, 2018, Applied Physics

colloquium, Harvard University, Cambridge.

110. “Bio-inspired computing with memristive devices”, 2018, MechE Colloquium, MIT,

Cambridge.

Jianhua (Joshua) Yang - UMass Amherst · Jianhua (Joshua) Yang Department of Electrical and...

Documents

Transcript of Jianhua (Joshua) Yang - UMass Amherst · Jianhua (Joshua) Yang Department of Electrical and...