IRGP4750DPbF IRGP4750D-EPbFRG ( ) 10 100 1000 S w i c h i n g g T i m e J (n s) tR tdOFF tF tdON...
Transcript of IRGP4750DPbF IRGP4750D-EPbFRG ( ) 10 100 1000 S w i c h i n g g T i m e J (n s) tR tdOFF tF tdON...
IRGP4750DPbF IRGP4750D-EPbF
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Base part number Package Type Standard Pack Orderable Part Number Form Quantity
IRGP4750DPbF TO-247AC Tube 25 IRGP4750DPbF
IRGP4750D-EPbF TO-247AD Tube 25 IRGP4750D-EPbF
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 650 V IC @ TC = 25°C Continuous Collector Current 70 IC @ TC = 100°C Continuous Collector Current 50 ICM Pulse Collector Current, VGE = 15V 105 ILM Clamped Inductive Load Current, VGE = 20V 140 IF @ TC = 25°C Diode Continuous Forward Current 80 IF @ TC = 100°C Diode Continuous Forward Current 50 IFM Diode Maximum Forward Current 140 VGE Continuous Gate-to-Emitter Voltage ±20 V PD @ TC = 25°C Maximum Power Dissipation 273
W PD @ TC = 100°C Maximum Power Dissipation 136 TJ Operating Junction and -40 to +175
C TSTG Storage Temperature Range Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
A
Thermal Resistance Parameter Min. Typ. Max. Units RJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) ––– ––– 0.55
°C/W RCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––
RJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– ––– 40
RJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) ––– ––– 0.95
VCES = 650V
IC = 50A, TC =100°C
tSC 5.5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.7V @ IC = 35A
Applications Industrial Motor Drive UPS Solar Inverters Welding
G C E Gate Collector Emitter
G
E C
G C
E
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
IRGP4750DPbF TO‐247AC
IRGP4750D‐EPbF TO‐247AD
E
G
n-channel
C
Features Benefits Low VCE(ON) and Switching Losses High Efficiency in a Wide Range of Applications
5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Increased Reliability
Positive VCE (ON) Temperature Coefficient Excellent Current Sharing in Parallel Operation
Rugged Transient Performance
Lead-Free, RoHs compliant Environmentally friendly
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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 650 — — V VGE = 0V, IC = 100µA V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 0.72 — V/°C VGE = 0V, IC = 2.0mA (25°C-175°C)
VCE(on) Collector-to-Emitter Saturation Voltage — 1.7 2.0
V IC = 35A, VGE = 15V, TJ = 25°C
— 2.1 — IC = 35A, VGE = 15V, TJ = 175°C VGE(th) Gate Threshold Voltage 5.5 — 7.4 V VCE = VGE, IC = 1.4mA
VGE(th)/TJ Threshold Voltage Temperature Coeff. — -18 — mV/°C VCE = VGE, IC = 1.4mA (25°C-175°C)
gfe Forward Transconductance — 23 — S VCE = 50V, IC = 35A, PW = 20µs
ICES Collector-to-Emitter Leakage Current — 1.0 35 µA VGE = 0V, VCE = 650V — 1.0 — mA VGE = 0V, VCE = 650V, TJ = 175°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
VF Diode Forward Voltage Drop — 1.6 2.1 IF = 35A — 1.3 — IF = 35A, TJ = 175°C
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max Units Conditions
Qg Total Gate Charge (turn-on) — 70 105 nC
IC = 35A Qge Gate-to-Emitter Charge (turn-on) — 20 30 VGE = 15V Qgc Gate-to-Collector Charge (turn-on) — 30 45 VCC = 400V Eon Turn-On Switching Loss — 1.3 2.2
mJ IC = 35A, VCC = 400V, VGE=15V
RG = 10, TJ = 25°C
Energy losses include tail & diode reverse recovery
Eoff Turn-Off Switching Loss — 0.5 0.8 Etotal Total Switching Loss — 1.8 3.0 td(on) Turn-On delay time — 50 70
ns tr Rise time — 30 50 td(off) Turn-Off delay time — 105 120 tf Fall time — 20 40 Eon Turn-On Switching Loss — 2.4 —
mJ IC = 35A, VCC = 400V, VGE=15V
RG = 10, TJ = 175°C
Energy losses include tail & diode reverse recovery
Eoff Turn-Off Switching Loss — 0.9 —
Etotal Total Switching Loss — 3.3 —
td(on) Turn-On delay time — 45 —
ns tr Rise time — 30 —
td(off) Turn-Off delay time — 120 —
tf Fall time — 70 — Cies Input Capacitance — 2200 — VGE = 0V Coes Output Capacitance — 190 — pF VCC = 30V Cres Reverse Transfer Capacitance — 60 — f = 1.0MHz
RBSOA Reverse Bias Safe Operating Area TJ = 175°C, IC = 140A
FULL SQUARE VCC = 520V, Vp ≤ 650V VGE = +20V to 0V
SCSOA Short Circuit Safe Operating Area 5.5 — — µs TJ = 150°C,VCC = 400V, Vp ≤ 650V VGE = +15V to 0V
Erec Reverse Recovery Energy of the Diode — 380 — µJ TJ = 175°C
trr Diode Reverse Recovery Time — 150 — ns VCC = 400V, IF = 35A
Irr Peak Reverse Recovery Current — 27 — A VGE = 15V, Rg = 10
V
Notes: VCC = 80% (VCES), VGE = 20V.
R is measured at TJ of approximately 90°C. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. Maximum limits are based on statistical sample size characterization. Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.
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IRGP4750DPbF/IRGP4750D-EPbF
Fig. 5 - Reverse Bias SOA TJ = 175°C; VGE = 20V
25 50 75 100 125 150 175
TC (°C)
0
50
100
150
200
250
300
Pto
t (W
)
25 50 75 100 125 150 175
TC (°C)
0
20
40
60
80
I C (
A)
0.1 1 10 100
f , Frequency ( kHz )
10
20
30
40
50
60
70
80
Load
Cur
rent
( A
)
For both:Duty cycle : 50%Tj = 175°CTcase = 100°CGate drive as specifiedPower Dissipation = 136W
Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental)
I
Square Wave:
VCC
Diode as specified
10 100 1000
VCE (V)
1
10
100
1000
I C (
A)
Fig. 3 - Power Dissipation vs. Case Temperature
1 10 100 1000
VCE (V)
0.1
1
10
100
1000
I C (
A)
10µsec
100µsec
Tc = 25°CTj = 175°CSingle Pulse
DC
1msec
Fig. 4 - Forward SOA TC = 25°C; TJ ≤ 175°C; VGE = 15V
Fig. 2 - Maximum DC Collector Current vs. Case Temperature
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Fig. 10 - Typical VCE vs. VGE TJ = -40°C
Fig. 11 - Typical VCE vs. VGE TJ = 25°C
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VF (V)
0
20
40
60
80
100
120
140
I F (
A)
-40°C25°C175°C
Fig. 7 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 20µs
0 2 4 6 8 10
VCE (V)
0
20
40
60
80
100
120
140
I CE
(A
)
VGE = 18VVGE = 15VVGE = 12VVGE = 10VVGE = 8.0V
0 2 4 6 8 10
VCE (V)
0
20
40
60
80
100
120
140
I CE
(A
)
VGE = 18VVGE = 15VVGE = 12VVGE = 10VVGE = 8.0V
0 2 4 6 8 10
VCE (V)
0
20
40
60
80
100
120
140
I CE
(A
)
VGE = 18VVGE = 15VVGE = 12VVGE = 10VVGE = 8.0V
Fig. 6 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 20µs
5 10 15 20
VGE (V)
0
2
4
6
8
10
VC
E (
V)
ICE = 18A
ICE = 35A
ICE = 70A
Fig. 8 - Typ. IGBT Output Characteristics TJ = 175°C; tp = 20µs
5 10 15 20
VGE (V)
0
2
4
6
8
10
VC
E (
V)
ICE = 18A
ICE = 35A
ICE = 70A
Fig. 9 - Typ. Diode Forward Voltage Drop Characteristics
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Fig. 16 - Typ. Energy Loss vs. RG TJ = 175°C; VCE = 400V, ICE = 35A; VGE = 15V
Fig. 17 - Typ. Switching Time vs. RG TJ = 175°C; VCE = 400V, ICE = 35A; VGE = 15V
5 10 15 20
VGE (V)
0
2
4
6
8
10V
CE
(V
)
ICE = 18A
ICE = 35A
ICE = 70A
0 10 20 30 40 50 60 70
IC (A)
0
1
2
3
4
5
6
7
8
Ene
rgy
(mJ)
EOFF
EON
Fig. 14 - Typ. Energy Loss vs. IC
TJ = 175°C; ; VCE = 400V, RG = 10; VGE = 15V
Fig. 12 - Typical VCE vs. VGE
TJ = 175°C
4 6 8 10 12 14 16
VGE (V)
0
20
40
60
80
100
120
140
I CE
(A
)
TJ = 25°C
TJ = 175°C
0 20 40 60 80 100
RG ()
10
100
1000
Sw
ichi
ng T
ime
(ns)
tR
tdOFF
tF
tdON
Fig. 15 - Typ. Switching Time vs. IC
TJ = 175°C; VCE = 400V, RG = 10; VGE = 15V
0 10 20 30 40 50 60 70
IC (A)
1
10
100
1000
Sw
ichi
ng T
ime
(ns)
tR
tdOFF
tF
tdON
Fig. 13 - Typ. Transfer Characteristics VCE = 50V; tp = 20µs
0 20 40 60 80 100
Rg ()
0
1
2
3
4
5
6
Ene
rgy
(mJ)
EOFF
EON
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IRGP4750DPbF/IRGP4750D-EPbF
Fig. 22 - Typ. Diode ERR vs. IF TJ = 175°C
Fig. 20 - Typ. Diode IRR vs. diF/dt VCC = 400V; VGE = 15V; IF = 35A; TJ = 175°C
10 20 30 40 50 60 70
IF (A)
5
15
25
35
45I R
R (
A)
RG = 47
RG = 10
RG = 100
RG = 5
0 20 40 60 80 100
RG (
0
10
20
30
40
I RR
(A
)
0 200 400 600 800 1000 1200
diF /dt (A/µs)
0
10
20
30
40
I RR
(A
)
Fig. 18 - Typ. Diode IRR vs. IF TJ = 175°C
Fig. 19 - Typ. Diode IRR vs. RG TJ = 175°C
0 10 20 30 40 50 60 70 80
IF (A)
0
200
400
600
800
Ene
rgy
(µJ)
RG = 10RG = 47RG = 100
RG = 5
9 10 11 12 13 14 15 16
VGE (V)
5
10
15
20
25
Tim
e (µ
s)
20
60
100
140
180
Cu
rrent (A
)
TscIsc
Fig. 23 - VGE vs. Short Circuit Time VCC = 400V; TC = 150°C
0 200 400 600 800 1000 1200 1400
diF /dt (A/µs)
1000
2000
3000
4000
5000
QR
R (
nC)
35A
70A
18A
Fig. 21 - Typ. Diode QRR vs. diF/dt VCC = 400V; VGE = 15V; TJ = 175°C
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Fig. 27 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
0 100 200 300 400 500 600
VCE (V)
1
10
100
1000
10000C
apac
itanc
e (p
F)
Cies
Coes
Cres
0 10 20 30 40 50 60 70 80
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VG
E, G
ate-
to-E
mitt
er V
olta
ge
(V) VCES = 400V
VCES = 300V
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
The
rmal
Res
pon
se (
Z th
JC ) 0.20
0.10
D = 0.50
0.020.01
0.05
SINGLE PULSE( THERMAL RESPONSE )
Notes:1. Duty Factor D = t1/t22. Peak Tj = P dm x Zthjc + Tc
Fig. 25 - Typical Gate Charge vs. VGE ICE = 35A
Fig. 24 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
10
The
rmal
Res
pon
se (
Z th
JC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE( THERMAL RESPONSE )
Notes:1. Duty Factor D = t1/t22. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) i (sec)
0.01502 0.000029
0.26877 0.000327
0.40240 0.003652
0.26426 0.028923
J
J
1
12
23
3
R1
R1R2
R2R3
R3
Ci= iRiCi= iRi
C
C
4
4
R4
R4
Fig. 26 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
J
J
1
12
23
3
R1
R1R2
R2R3
R3
C
C
Ci= iRiCi= iRi
Ri (°C/W) i (sec)
0.16631 0.000327
0.23758 0.003309
0.14552 0.01848
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IRGP4750DPbF/IRGP4750D-EPbF
Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit
Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit
Fig.C.T.5 - Resistive Load Circuit Fig.C.T.6 - BVCES Filter Circuit
0
1K
VCCDUT
L
L
Rg
80 V
DUT VCC
+-
DC
4X
DUT
VCC
RSH
L
Rg
VCCDUT /DRIVER
diode clamp /DUT
-5V
Rg
VCCDUT
R = VCC
ICM
G force
C sense
100K
DUT0.0075µF
D1 22K
E force
C force
E sense
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IRGP4750DPbF/IRGP4750D-EPbF
Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4
Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.4
Fig. WF4 - Typ. S.C. Waveform
@ TJ = 150°C using Fig. CT.3
Fig. WF3 - Typ. Diode Recovery Waveform @ TJ = 175°C using Fig. CT.4
-100
0
100
200
300
400
500
-100
0
100
200
300
400
500
-5.00 0.00 5.00 10.00
Ice
(A)
Vce
(V
)
Time (uS)
VCE
ICE
-30
-20
-10
0
10
20
30
40
-0.40 0.00 0.40 0.80
I F(A
)
time (µS)
PeakIRR
tRR
QRR
-15
0
15
30
45
60
75
90
-100
0
100
200
300
400
500
600
-0.3 -0.1 0.1 0.3 0.5
I CE
(A)
VC
E(V
)
time(µs)
90% ICE
10% VCE
10% ICE
Eoff Loss
tf
-15
0
15
30
45
60
75
-100
0
100
200
300
400
500
-0.3 0 0.3 0.6 0.9
I CE
(A)
VC
E(V
)
time (µs)
TEST CURRENT
90% ICE
10% VCE
10%ICE
tr
Eon Loss
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IRGP4750DPbF/IRGP4750D-EPbF
TO-247AC Package Outline Dimensions are shown in millimeters (inches)
YEAR 1 = 2001
DATE CODE
PART NUMBERINTERNATIONAL
LOGORECTIFIER
ASSEMBLY
56 57
IRFPE30
135H
LINE Hindicates "Lead-Free" WEEK 35LOT CODE
IN THE ASSEMBLY LINE "H"
ASSEMBLED ON WW 35, 2001
Notes: This part marking information applies to devices produced after 02/26/2001
Note: "P" in assembly line position
EXAMPLE:WITH ASSEMBLY THIS IS AN IRFPE30
LOT CODE 5657
TO-247AC Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
TO-247AC package is not recommended for Surface Mount Application.
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IRGP4750DPbF/IRGP4750D-EPbF
TO-247AD Package Outline Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
A S S E M B L Y Y E A R 0 = 2 0 0 0
A S S E M B L E D O N W W 3 5 , 2 0 0 0
IN T H E A S S E M B L Y L IN E "H "
E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D - E
L O T C O D E 5 6 5 7W IT H A S S E M B L Y P A R T N U M B E R
D A T E C O D E
IN T E R N A T IO N A LR E C T IF IE R
L O G O 0 3 5 H
5 6 5 7
W E E K 3 5
L IN E H
L O T C O D EN o te : "P " in a s s e m b ly l in e p o s it io n
in d ic a te s "L e a d - F re e "
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
TO-247AD package is not recommended for Surface Mount Application.
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IRGP4750DPbF/IRGP4750D-EPbF
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/
Qualification Information†
Qualification Level Industrial
TO-247AC N/A
TO-247AD
RoHS Compliant Yes
Moisture Sensitivity Level
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
Revision History Date Comments
Added IFM Diode Maximum Forward Current = 140A with the note on page 1.
Removed note from switching losses test condition on page 2. 11/13/2014