INSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODE

IRG7PH42UDPbFIRG7PH42UD-EP

1 www.irf.com10/26/09

E

G

n-channel

CVCES = 1200V

IC = 45A, TC = 100°C

TJ(max) = 150°C

VCE(on) typ. = 1.7V

Features• Low VCE (ON) trench IGBT technology• Low switching losses• Square RBSOA• 100% of the parts tested for ILM • Positive VCE (ON) temperature co-efficient• Ultra fast soft recovery co-pak diode• Tight parameter distribution• Lead-Free

Benefits• High efficiency in a wide range of applications• Suitable for a wide range of switching frequencies due to

low VCE (ON) and low switching losses• Rugged transient performance for increased reliability• Excellent current sharing in parallel operation

Applications• U.P.S.• Welding• Solar Inverter• Induction Heating G C E

Gate Collector Emitter

TO-247ACIRG7PH42UDPbF

TO-247ADIRG7PH42UD-EP

G C E

C

G C E

C

Absolute Maximum RatingsParameter Max. Units

VCES Collector-to-Emitter Voltage 1200 V

IC @ TC = 25°C Continuous Collector Current (Silicon Limited) 85

IC @ TC = 100°C Continuous Collector Current (Silicon Limited) 45

INOMINAL Nominal Current 30

ICM Pulse Collector Current, VGE = 15V 90 A

ILM Clamped Inductive Load Current, VGE = 20V 120

IF @ TC = 25°C Diode Continous Forward Current 85

IF @ TC = 100°C Diode Continous Forward Current 45

IFM Diode Maximum Forward Current 120

VGE Continuous Gate-to-Emitter Voltage ±30 V

PD @ TC = 25°C Maximum Power Dissipation 320 W

PD @ TC = 100°C Maximum Power Dissipation 130

TJ Operating Junction and -55 to +150

TSTG Storage Temperature Range °C

Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)

Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)

Thermal ResistanceParameter Min. Typ. Max. Units

RθJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) ––– ––– 0.39

RθJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) ––– ––– 0.56 °C/W

RθCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––

RθJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– 40 –––

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Notes: VCC = 80% (VCES), VGE = 20V, L = 22µH, RG = 10Ω. Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. Rθ is measured at Calculated continuous current based on maximum allowable junction temperature.

Bond wire current limit is 78A. Note that current limitations arising from heating ofthe device leads may occur with some lead mounting arrangements.

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)Parameter Min. Typ. Max. Units Conditions

V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 — — V VGE = 0V, IC = 100µA

∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.18 — V/°C VGE = 0V, IC = 2.0mA (25°C-150°C)

VCE(on) Collector-to-Emitter Saturation Voltage — 1.7 2.0 IC = 30A, VGE = 15V, TJ = 25°C

— 2.1 — V IC = 30A, VGE = 15V, TJ = 150°C

VGE(th) Gate Threshold Voltage 3.0 — 6.0 V VCE = VGE, IC = 1.0mA

∆VGE(th)/∆TJ Threshold Voltage temp. coefficient — -14 — mV/°C VCE = VGE, IC = 1.0mA (25°C - 150°C)

gfe Forward Transconductance — 32 — S VCE = 50V, IC = 30A, PW = 80µs

ICES Collector-to-Emitter Leakage Current — 4.4 150 µA VGE = 0V, VCE = 1200V

— 1200 — VGE = 0V, VCE = 1200V, TJ = 150°C

VFM Diode Forward Voltage Drop — 2.0 2.4 V IF = 30A

— 2.2 — IF = 30A, TJ = 150°C

IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±30V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)Parameter Min. Typ. Max. Units

Qg Total Gate Charge (turn-on) — 157 236 IC = 30A

Qge Gate-to-Emitter Charge (turn-on) — 21 32 nC VGE = 15V

Qgc Gate-to-Collector Charge (turn-on) — 69 104 VCC = 600V

Eon Turn-On Switching Loss — 2105 2374 IC = 30A, VCC = 600V, VGE = 15V

Eoff Turn-Off Switching Loss — 1182 1424 µJ RG = 10Ω, L = 200µH,TJ = 25°C

Etotal Total Switching Loss — 3287 3798 Energy losses include tail & diode reverse recovery

td(on) Turn-On delay time — 25 34

tr Rise time — 32 41 ns

td(off) Turn-Off delay time — 229 271

tf Fall time — 63 86

Eon Turn-On Switching Loss — 2978 — IC = 30A, VCC = 600V, VGE=15V

Eoff Turn-Off Switching Loss — 1968 — µJ RG=10Ω, L=200µH, TJ = 150°C

Etotal Total Switching Loss — 4946 — Energy losses include tail & diode reverse recovery

td(on) Turn-On delay time — 19 —

tr Rise time — 32 — ns

td(off) Turn-Off delay time — 290 —

tf Fall time — 154 —

Cies Input Capacitance — 3338 — pF VGE = 0V

Coes Output Capacitance — 124 — VCC = 30V

Cres Reverse Transfer Capacitance — 75 — f = 1.0Mhz

TJ = 150°C, IC = 120A

RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 960V, Vp =1200V

Rg = 10Ω, VGE = +20V to 0V

Erec Reverse Recovery Energy of the Diode — 1475 — µJ TJ = 150°C

trr Diode Reverse Recovery Time — 153 — ns VCC = 600V, IF = 30A

Irr Peak Reverse Recovery Current — 34 — A Rg = 10Ω, L =1.0mH

Conditions

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Fig. 1 - Maximum DC Collector Current vs.Case Temperature

Fig. 2 - Power Dissipation vs. CaseTemperature

Fig. 3 - Forward SOATC = 25°C, TJ ≤ 150°C; VGE =15V

Fig. 4 - Reverse Bias SOATJ = 150°C; VGE = 20V

Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental)

0 20 40 60 80 100 120 140 160

TC (°C)

0

50

100

150

200

250

300

350

Pto

t (W

)

10 100 1000 10000

VCE (V)

1

10

100

1000

I C (

A)

1 10 100 1000 10000

VCE (V)

0.1

1

10

100

1000

I C (

A)

10µsec

100µsec

Tc = 25°CTj = 150°CSingle Pulse

DC

1msec

0.1 1 10 100

f , Frequency ( kHz )

0

10

20

30

40

50

60

Load

Cur

rent

( A

)

For both:Duty cycle : 50%Tj = 150°CTsink = 90°CGate drive as specifiedPower Dissipation = 95W

60% of rated voltage

I

Ideal diodes

Square wave:

25 50 75 100 125 150 175

TC (°C)

0

20

40

60

80

100

I C (

A)

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Fig. 5 - Typ. IGBT Output CharacteristicsTJ = -40°C; tp = 80µs

Fig. 6 - Typ. IGBT Output CharacteristicsTJ = 25°C; tp = 80µs

Fig. 7 - Typ. IGBT Output CharacteristicsTJ = 150°C; tp = 80µs

Fig. 8 - Typ. Diode Forward Characteristics tp = 80µs

Fig. 10 - Typical VCE vs. VGETJ = 25°CFig. 9 - Typical VCE vs. VGE

TJ = -40°C

4 8 12 16 20

VGE (V)

0

2

4

6

8

10

12

VC

E (

V)

ICE = 15A

ICE = 30A

ICE = 60A

4 8 12 16 20

VGE (V)

0

2

4

6

8

10

12

VC

E (

V) ICE = 15A

ICE = 30A

ICE = 60A

0.0 1.0 2.0 3.0 4.0 5.0 6.0

VF (V)

0

20

40

60

80

100

120

I F (

A)

-40°C25°C

150°C

0 2 4 6 8 10

VCE (V)

0

20

40

60

80

100

120I C

E (

A)

VGE = 18V

VGE = 15VVGE = 12VVGE = 10VVGE = 8.0V

0 2 4 6 8 10

VCE (V)

0

20

40

60

80

100

120

I CE

(A

)

VGE = 18V

VGE = 15VVGE = 12VVGE = 10VVGE = 8.0V

0 2 4 6 8 10

VCE (V)

0

20

40

60

80

100

120

I CE

(A

)

VGE = 18V

VGE = 15VVGE = 12VVGE = 10VVGE = 8.0V

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Fig. 11 - Typical VCE vs. VGETJ = 150°C

Fig. 12 - Typ. Transfer CharacteristicsVCE = 50V

Fig. 13 - Typ. Energy Loss vs. ICTJ = 150°C; L = 200µH; VCE = 600V, RG = 10Ω; VGE = 15V

Fig. 15 - Typ. Energy Loss vs. RGTJ = 150°C; L = 200µH; VCE = 600V, ICE = 30A; VGE = 15V

Fig. 16 - Typ. Switching Time vs. RGTJ = 150°C; L = 200µH; VCE = 600V, ICE = 30A; VGE = 15V

Fig. 14 - Typ. Switching Time vs. ICTJ = 150°C; L = 200µH; VCE = 600V, RG = 10Ω; VGE = 15V

4 8 12 16 20

VGE (V)

0

2

4

6

8

10

12V

CE

(V

) ICE = 15A

ICE = 30A

ICE = 60A

0 20 40 60 80 100

RG (Ω)

1000

2000

3000

4000

5000

6000

Ene

rgy

(µJ)

EON

EOFF

0 20 40 60 80 100

RG (Ω)

10

100

1000

10000

Sw

ichi

ng T

ime

(ns)

tR

tdOFF

tF

tdON

0 10 20 30 40 50 60

IC (A)

0

1000

2000

3000

4000

5000

6000

7000

Ene

rgy

(µJ)

EOFF

EON

0 10 20 30 40 50 60

IC (A)

10

100

1000

Sw

ichi

ng T

ime

(ns)

tR

tdOFF

tF

tdON

4 6 8 10 12

VGE, Gate-to-Emitter Voltage (V)

0

20

40

60

80

100

120

I CE

, Col

lect

or-t

o-E

mitt

er C

urre

nt (

A)

TJ = 25°C

TJ = 150°C

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Fig. 19 - Typ. Diode IRR vs. diF/dtVCC = 600V; VGE = 15V; IF = 30A; TJ = 150°C

Fig. 20 - Typ. Diode QRR vs. diF/dtVCC = 600V; VGE = 15V; TJ = 150°C

Fig. 17 - Typ. Diode IRR vs. IFTJ = 150°C

Fig. 18 - Typ. Diode IRR vs. RGTJ = 150°C

15 20 25 30 35 40 45 50 55 60

IF (A)

10

20

30

40

50I R

R (

A)

RG = 5.0Ω

RG = 10Ω

RG = 100Ω

RG = 47Ω

0 200 400 600 800 1000 1200

diF /dt (A/µs)

20

25

30

35

40

I RR

(A

)

0 20 40 60 80 100

RG (Ω)

20

25

30

35

40

I RR

(A

)

Fig. 21 - Typ. Diode ERR vs. IFTJ = 150°C

15 20 25 30 35 40 45 50 55 60

IF (A)

500

1000

1500

2000

2500

3000

3500

Ene

rgy

(µJ)

RG = 5.0ΩRG = 10ΩRG = 47ΩRG = 100Ω

0 200 400 600 800 1000 1200 1400

diF /dt (A/µs)

2000

3000

4000

5000

6000

7000

8000

9000

QR

R (

nC)

5.0Ω

10Ω

100Ω

47Ω

30A

60A

15A

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Fig. 22 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz

Fig. 23 - Typical Gate Charge vs. VGE ICE = 30A; L = 600µH

Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

Fig. 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

0 100 200 300 400 500 600

VCE (V)

10

100

1000

10000C

apac

itanc

e (p

F)

Cies

Coes

Cres

0 20 40 60 80 100 120 140 160 180

Q G, Total Gate Charge (nC)

0

2

4

6

8

10

12

14

16

VG

E, G

ate-

to-E

mitt

er V

olta

ge (

V) VCES = 600V

VCES = 400V

1E-006 1E-005 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

0.0001

0.001

0.01

0.1

1

The

rmal

Res

pons

e (

Z th

JC ) 0.20

0.10

D = 0.50

0.020.01

0.05

SINGLE PULSE( THERMAL RESPONSE )

Notes:1. Duty Factor D = t1/t22. Peak Tj = P dm x Zthjc + Tc

τJ

τJ

τ1

τ1τ2

τ2 τ3

τ3

R1

R1 R2

R2 R3

R3

Ci i/RiCi= τi/Ri

ττC

τ4

τ4

R4

R4 Ri (°C/W) τi (sec)0.1254 0.000515

0.0937 0.000515

0.1889 0.001225

0.1511 0.018229

1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

0.0001

0.001

0.01

0.1

1

The

rmal

Res

pons

e (

Z th

JC )

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE( THERMAL RESPONSE )

Notes:1. Duty Factor D = t1/t22. Peak Tj = P dm x Zthjc + Tc

τJ

τJ

τ1

τ1τ2

τ2 τ3

τ3

R1

R1 R2

R2 R3

R3

Ci i/RiCi= τi/Ri

ττC

τ4

τ4

R4

R4 Ri (°C/W) τi (sec)0.1306 0.000313

0.1752 0.002056

0.0814 0.008349

0.0031 0.043100

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Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit

Fig.C.T.4 - Resistive Load CircuitFig.C.T.3 - Switching Loss Circuit

0

1K

VCCDUT

L

L

Rg

80 V

DUT VCC

+-

L

Rg

VCCDUT /DRIVER

diode clamp /DUT

-5V

Rg

VCCDUT

R = VCC

ICM

G force

C sense

100K

DUT0.0075µF

D1 22K

E force

C force

E sense

Fig.C.T.5 - BVCES Filter Circuit

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Fig. WF3 - Typ. Diode Recovery Waveform@ TJ = 150°C using Fig. CT.4

Fig. WF1 - Typ. Turn-off Loss Waveform@ TJ = 150°C using Fig. CT.4

Fig. WF2 - Typ. Turn-on Loss Waveform@ TJ = 150°C using Fig. CT.4

-100

0

100

200

300

400

500

600

700

800

900

-0.5 0 0.5 1 1.5 2

time(µs)

VC

E (V

)

-10

0

10

20

30

40

50

60

70

80

90

I CE

(A)90% ICE

5% VCE

5% ICE

Eoff Loss

tf

-100

0

100

200

300

400

500

600

700

800

900

9.4 9.6 9.8 10 10.2

time (µs)V

CE

(V)

-10

0

10

20

30

40

50

60

70

80

90

I CE

(A)

TEST CURRENT

90% test current

5% VCE

10% test current

tr

Eon Loss

-40

-30

-20

-10

0

10

20

30

40

-0.25 0.00 0.25 0.50 0.75 1.00

time (µS)

IF (A

)

PeakIRR

tRR

EREC

10%PeakIRR

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TO-247AC package is not recommended for Surface Mount Application.

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IRG7PH42UDPbF/IRG7PH42UD-EP

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IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 10/2009

Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market.

Qualification Standards can be found on IR’s Web site.

TO-247AD package is not recommended for Surface Mount Application.

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Authorized Distributor

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