IP Port TDR Seminar: Four Device ComparisonIP Port Test & Model Objectives Ł TDR (S11) measured to...
Transcript of IP Port TDR Seminar: Four Device ComparisonIP Port Test & Model Objectives Ł TDR (S11) measured to...
IP P
ort T
DR
Sem
inar
: Fo
ur D
evic
e C
ompa
rison
Jim
May
rand
, TD
A C
onsu
ltant
Com
plet
e D
VT
Sol
utio
ns17
34 D
ivis
ader
o St
reet
San
Fra
ncis
co, C
A 9
4115
-305
0te
l415
-738
-860
7fa
x 41
5-92
1-18
73
may
rand
@ea
rthlin
k.ne
tw
ww
.tdas
yste
ms.
com
IP P
ort T
est &
Mod
el O
bjec
tives
�TD
R (S
11) m
easu
red
to I
C in
put T
rans
ceiv
ers
�P
artit
ion
TDR
into
exa
ct c
ompo
nent
mod
els
(e.g
. via
)�
Opt
imiz
e H
spic
e si
mul
atio
n to
mat
ch S
11 m
easu
rem
ent
�S
imul
ate
TDT/
S21
for 1
ns e
ye d
iagr
am�
Diff
eren
tiate
IC p
erfo
rman
ce b
y E
ye &
S P
aram
eter
s�
Diff
eren
tiate
IC p
erfo
rman
ce b
y S
11/S
21 c
ross
over
�U
se IC
onne
ct A
naly
sis
to c
onve
rt Ti
me
Dom
ain
Sim
ulat
ions
to Im
peda
nce,
S p
aram
eter
s an
d E
yes
�U
se A
naly
sis
to d
efin
e ne
twor
k S
11 P
ass/
Fail
test
2 P
ort S
Par
amet
ers
From
1 P
ort T
DR
Tes
tW
ith a
cces
s to
inpu
t TD
R o
nly,
two
port
S p
aram
eter
s w
ere
extr
acte
d fr
om �
open
te
rmin
atio
n� a
nd �
bal
ance
term
inat
ion�
TD
R m
easu
rem
ents
. For
this
dev
ice
the
IC
was
act
ivel
y te
rmin
ated
(on
chip
and
dow
n st
ream
). T
he IC
cou
ldbe
sw
itche
d fr
om
a dc
ope
n to
a 9
0 oh
m d
iffer
entia
l (45
ohm
sin
gle
ende
d) te
rmin
atio
n. I
n th
e op
en
stat
e, th
e pa
th le
ngth
to th
e IC
term
inat
or w
as c
hara
cter
ized
. Th
en th
e de
vice
te
rmin
atio
ns w
ere
activ
ated
and
diff
eren
tial I
nser
tion
and
�tru
e� R
etur
n lo
ss w
as
mea
sure
d. S
par
amet
ers
wer
e ex
trac
ted
from
TD
R�s
to c
onfir
m e
xact
acc
urac
y.
ICon
nect
sof
twar
e ca
n ex
trac
t S p
aram
eter
s fr
om O
pen
TDR
onl
y.
Firs
t IC
onne
ct s
oftw
are
�un-
peel
s� m
ultip
le T
DR
refle
ctio
ns c
reat
ing
a �t
rue�
im
peda
nce
prof
ile ri
ght i
nto
the
IC in
put p
in.
The
impe
danc
e m
easu
rem
ent w
ith
activ
e IP
term
inat
or w
as tr
ansf
orm
ed to
a �
true
� S
11, r
etur
n lo
ss m
easu
rem
ent.
O
pen
term
inat
ion
impe
danc
e pr
ofile
was
use
d to
cha
ract
eriz
e fo
r ski
n an
d di
elec
tric
lo
ss b
y ex
amin
ing
riset
ime
degr
adat
ion
betw
een
inpu
t an
d op
en-r
efle
ctio
n ed
ges.
U
sing
ICon
nect
a d
etai
led
spic
e m
odel
was
cre
ated
by
SI e
ngin
eer.
This
was
all
done
usi
ng IC
onne
ct &
Hsp
ice
repl
acin
g op
en IC
term
inat
ion
with
ac
tive
term
inat
ion
sub-
circ
uit.
2nd
Hsp
ice
sim
ulat
ion
conf
irmed
that
ICon
nect
had
ac
cura
tely
�ca
ptur
ed�
the
inte
rcon
nect
mod
el w
hich
was
then
use
d to
mea
sure
bo
th In
sert
ion
(S21
), re
turn
(S11
) los
s; p
lus
hund
reds
of p
aram
eter
s su
ch IC
inpu
t ca
paci
tanc
e to
a fF
acc
urac
y.
TDS
8000
Boa
rdTe
stbo
ard
tdro
_ref
tdro
_US
B_R
ef
sock
et
IC
tdro
_noI
Ctd
ro_I
Con
& td
ro_I
Cof
f
US
B O
dd M
easu
rem
ent L
ocat
ions
TDR
Mea
sure
men
ts
US
B C
able
Pac
kage
/IC1
Acc
eptib
leR
iset
ime
H
eigh
t=40
0mv,
Bit=
2083
ps
S11
(red
) S21
(blu
e)
But
To
Loss
y w
/Sm
all
reso
nanc
e
Hig
h In
serti
on
Eve
n (c
omm
on) &
Odd
(diff
eren
tial)
From
Old
TD
R D
ata
Def
ined
par
titio
ns�
Boa
rd:
�M
odul
e Zc
omm
on+/
-30%
mar
gina
l�
Due
to C
onne
ctor
Hig
h Z
�D
ue to
Via
Z D
ip�
Deg
rade
s:�
Diff
eren
tial Z
dd�
Ret
urn
Loss
(SD
11)
�Te
stbo
ard
�B
ond
Wire
Z o
k�
Chi
p C
arrie
r Z o
k�
IC In
put p
ad C
apac
itanc
e no
t ok
�Th
e en
d at
TD
R (E
ven=
Odd
)
�IC
or P
CB
fix?
?�
Dec
reas
e IC
inpu
t Cin
by h
alf
�O
r fix
Hig
h Z
disc
ontin
uitie
s�
Or f
ix b
oth
(not
nee
ded
for -
10 d
B S
11)
Eve
n
Odd
Car
rier
Ope
n ba
ll
Voi
d
Car
rier
Bon
d P
ad
Det
erm
ine
pad/
inpu
t cap
acita
nce
From
30p
s TD
R W
avef
orm
s
�Pa
d In
put C
apac
itanc
ew
hich
has
low
est D
ipIC
onne
ct m
easu
res
it
�Se
e se
vera
l effe
cts?
, �
Sip
ad�
IC C
hip
carri
er�
bond
wire
�30
ps T
DR
Sm
ears
Dat
a? N
o�
Enou
gh S
epar
atio
n? Y
es�
Cin
Dom
inat
es
IC V
ersu
s B
oard
S11
Plo
ts�
Gre
en re
turn
loss
exc
eeds
-5d
B a
bove
600
MH
z I
f IC
im
peda
nce
varia
tion
wer
e lim
ited
to 1
0% w
ith b
oard
un
chan
ged
then
the
retu
rn
loss
impr
oves
(blu
e) b
y 4
dB
caus
ing
retu
rn L
oss
to p
ass.
�If
boar
d w
as a
solim
ited
to a
10
% v
aria
tion,
then
Pur
ple
S11
>10
dB
at 1
GH
z!!!
��IC
� fix
reco
men
ded
Boa
rd &
IC fi
xed
Orig
inal
G
reen
IC F
ixed
JDE
C N
otes
On
Gig
abit
S11
US
B C
AB
LE, P
CB
IP IC
INP
UT
Diff
-TD
R W
AVE
FOR
M
Pac
kage
/IC2
S11
Res
onan
ce
Hei
ght=
400m
v, B
it=20
83ps
Big
Res
onan
ce
Pac
kage
/IC3
Mod
el W
avef
orm
s H
eigh
t=40
0mv,
Bit=
2083
ps
To L
ossy
Pac
kage
/IC4
Mod
el W
avef
orm
s H
eigh
t=40
0mv,
Bit=
2083
ps
US
B IP
Dev
ice
Eye
Com
paris
on
Hei
ght=
400m
v, B
it=20
83ps
Dev
2
Dev
3D
ev 4
Dev
1
Bes
t
Res
onan
ceLo
ss &
ring
Hig
h Lo
ss