Ion Source Development at RAL

79
Ion Source Development at RAL Dan Faircloth Including the work of: Scott Lawrie, Alan Letchford, Christoph Gabor, Phil Wise, Mark Whitehead, Trevor Wood, Mike Perkins, Mick Bates, David Findlay, Juergen Pozimski, Simon Jolly, Pete Savage, David Lee Faircloth – Proton Meeting RAL Thursday 24 th March

description

Ion Source Development at RAL. Dan Faircloth Including the work of: Scott Lawrie, Alan Letchford, Christoph Gabor, Phil Wise, Mark Whitehead, Trevor Wood, Mike Perkins, Mick Bates, David Findlay, Juergen Pozimski, Simon Jolly, Pete Savage, David Lee. - PowerPoint PPT Presentation

Transcript of Ion Source Development at RAL

Page 1: Ion Source Development at RAL

Ion Source Development at RAL

Dan Faircloth

Including the work of:Scott Lawrie, Alan Letchford, Christoph Gabor, Phil Wise, Mark Whitehead, Trevor Wood, Mike Perkins, Mick Bates,

David Findlay, Juergen Pozimski, Simon Jolly, Pete Savage, David Lee

Dan Faircloth – Proton Meeting RAL Thursday 24th March

Page 2: Ion Source Development at RAL

The ISIS Ion Source• Penning H- ion source• Surface plasma source (SPS)• Dudnikov type• 15 ml/min H2• 3 g/month Cs• 20 day average lifetime

Page 3: Ion Source Development at RAL

Mounting Flange

Negative Ion Beam

Mica

Penning Pole Pieces

10mm

Slit Aperture

Plate

Water Cooling Channels

Source BodyAir Cooling Channels

Ceramic Spacer

Copper Spacer

Cathode

Hollow Anode

Discharge Region

Extraction Electrode

Page 4: Ion Source Development at RAL
Page 5: Ion Source Development at RAL

H2

Negative Ion Beam

Piezo Hydrogen Valve

Caesium Oven

Caesium Vapour Heated Transport

Line

Hollow Anode

50 A Discharge

+17 kV Extraction Voltage

10 mm

Page 6: Ion Source Development at RAL

H2

Negative Ion Beam

Piezo Hydrogen Valve

Caesium Oven

Caesium Vapour Heated Transport

Line

Hollow Anode

50 A Discharge

+17 kV Extraction Voltage

Source Runs at 50 Hz Rep Rate

10 mm

Page 7: Ion Source Development at RAL

Timing

Time

H2 Gas Pulse

~ 200 μs

Extraction Voltage Pulse~ 250 μs

Source Runs at 50 Hz Rep Rate

Discharge Pulse~ 600 μs

H- Beam

Page 8: Ion Source Development at RAL

Cathode

Hydrogen Feed

Heated Caesium Transport Line

Air Cooling

Source Body

Hollow Anode

Discharge Power Feed

Thermocouples

Page 9: Ion Source Development at RAL

Aperture Plate

Page 10: Ion Source Development at RAL

Extraction Electrode

Support Insulators

Caesium Shields

Extraction Mount

Page 11: Ion Source Development at RAL

3 Sources at ISIS

Operational Source

24 x 7 operation20 day average lifetime

200-300 μs pulse length50 Hz35 keV

35 mA @ RFQ

Ion Source Development Rig

Pre-test operationalsources

Problem solving

FETS Source

Experimental sources

High current

Long pulse

65 keV

Page 12: Ion Source Development at RAL

FETS65 kV high

voltage platform

Page 13: Ion Source Development at RAL

LaserDiagnostics

Vessel

3 Solenoid LEBT

Ion Source

Page 14: Ion Source Development at RAL

+

Platform ground

-18 kV Pulsed

extraction power supply

Extraction electrode Aperture plate

Extraction gap

90 Sector magnet

Toriod 1

H- beam

FETS Source Schematic

Extraction electrode, coldbox and sector magnet all pulsed

Coldbox

65 kV Platform DC power supply

Post extraction acceleration gap

Laboratory ground

+-

160 MΩ 750 kΩ

Protection electrode

Ground planeSuppression electrode

P.S.

Page 15: Ion Source Development at RAL

FETS Source

Dan Faircloth – ICIS 2009

Page 16: Ion Source Development at RAL

FETS source modifications

600520440360280200Steady state

calculation

Computational fluid dynamic cooling calculation

450

500

550

600

650

700

0 0.005 0.01 0.015 0.02 0.025 0.03

Time (seconds)

Tem

pera

ture

(C)

Cathode Surface

Anode Surface

ΔT= 73 ºC

ΔT= 39 ºC

Transient CalculationFinite Element Modelling

2.2 ms discharge at 50 Hz achieved with simple design changes

1. Extend discharge duty cycle

Page 17: Ion Source Development at RAL

1. Extend discharge duty cycle

2. Discharge current

FETS source modifications

Experiments

For each extraction condition

there is a range of discharge currents that give minimum beam divergence

14 kV extraction voltage2.2 mm extraction gap

Page 18: Ion Source Development at RAL

1. Extend discharge duty cycle 3. Permanent magnet Penning field

2. Discharge current

FETS source modifications

Nd2Fe14B Permanent Magnets

B

To allow different extraction voltages the Penning field must be decoupled from the sector magnet field

Permanent magnets are used to produce the produce the 0.15 – 0.25 T required for a stable discharge

Page 19: Ion Source Development at RAL

1. Extend discharge duty cycle 3. Permanent magnet Penning field

2. Discharge current 4. Extraction

FETS source modifications

Voltage, Geometry and Meniscus

Increase voltage from 17 to 25 kV

2

23

B dVI

Child-Langmuir

-100

-80

-60

-40

-20

0

20

40

60

80

100

120

-100 0 100 200 300 400 500 600 700 800 900 1000

Ext V (kV)

Dis Cur (A)

H- (mA)

78 mA

Widen plasma electrode aperture

Meniscus Studies

Decrease extraction jaw separation

Page 20: Ion Source Development at RAL

1. Extend discharge duty cycle 3. Permanent magnet Penning field

2. Discharge current 4. Extraction

5. Analysing magnet

FETS source modifications

Magnet RedesignDipole has a focusing component

Magnetic Field Gradient Index, n

dRdB

BR

ne

eField gradient index

0 0.5T

Field must be adequately terminated

Significant improvement in emittance

Size of good field region increased

Beam expands under space charge

Exact degree of compensation unknown

Optimum field gradient index n = 1.2 determined by experiment

Page 21: Ion Source Development at RAL

1. Extend discharge duty cycle 3. Permanent magnet Penning field

2. Discharge current 4. Extraction

5. Analysing magnet

6. Post acceleration

FETS source modifications

Optimize Post Acceleration Gap

0 . 5 0

0 . 5 2

0 . 5 4

0 . 5 6

0 . 5 8

0 . 6 0

0 . 6 2

0 . 6 4

0 . 6 6

0 . 6 8

0 . 7 0

0 1 0 2 0 3 0 4 0

E l e c t r i c F i e l d [ k V / m m ]

no

rm.

rm

s-

em

itta

nc

e,

10

0%

x x ' e m i t t a n c e

y y ' e m i t t a n c e

Minimum emittance growth occurs for a post acceleration field of 9 kVmm-1

17 kV PA Voltage

Measured 355 mm from Ground Plane of PA Gap

11 kV PA Voltage 25 kV PA Voltage

Constant 10 kV Extraction Voltage 23 mA H - Beam Current

19 kV PA Voltage

55.0

mm

PA

Gap

9.2

mm

PA

Gap

2.5

mm

PA

Gap

2.0

mm

PA

Gap

12.5 kVmm-

19.5 kVmm-18.5 kVmm-15.5 kVmm-1

10 kVmm-

17.6 kVmm-1

6.8 kVmm-1

4.4 kVmm-1

2.7 kVmm-1

2.1 kVmm-1

1.8 kVmm-1

1.2 kVmm-1

0.5 kVmm-1

0.4 kVmm-1

0.3 kVmm-1

0.2 kVmm-1

Incr

easi

ng P

ost A

ccel

erat

ion

Gap

Len

gth

Increasing Post Acceleration Voltage

Page 22: Ion Source Development at RAL
Page 23: Ion Source Development at RAL

Isolating Column

1×10-4 mBar

6×10-5 mBar

Beam shutter

Slit-slit scanners

5×10-6 mBar

Retractable Faraday Cup

2000 Ls-1 Turbo Pump

Pepper pot or profile scintillator head

Camera

7×10-6 mBar

Solenoid 3

Toroid3

Solenoid 2

Solenoid 1

Toroid 1

Toroid 2

4 × 800 Ls-1 & 1 x 400 Ls-1 Turbo Pumps

Differential pumping and laser profile

vessel

400 Ls-1 turbo pump

Diagnostics vessel

Toroid 4

Laser Diagnostics

Page 24: Ion Source Development at RAL

Short Pulse Operation <1ms

For pulse lengths shorter than 1 ms:80 mA at the ground plane60 mA at the entrance of the RFQ0.3 πmm.mrads r.m.s normalised

Results that follow are for 2 ms pulse lengths…

Page 25: Ion Source Development at RAL

Vary Discharge Current- 20 to 50 ADischarge Current Discharge Voltage

Discharge Power Discharge Impedance

H- Beam Current

Page 26: Ion Source Development at RAL

1. Increased Plasma Density• Increased H+ and Cs+ bombardment

sputters Cs from cathode surface.

• More H- are stripped on their way to the extraction region.

Possible Explanation of Droop:

Page 27: Ion Source Development at RAL

2. Electrode Surface Temperature Rise

Transient 3D FEA calculations of electrode surface temperature

Higher discharge currents↓

Greater surface temperature rise during the pulse↓

Surface Cs coverage pushed away from optimum

Discharge Power

Page 28: Ion Source Development at RAL

Vary Discharge Rep Rate

Page 29: Ion Source Development at RAL

Vary Discharge Rep Rate

Page 30: Ion Source Development at RAL

Vary Discharge Rep Rate

Lower repetition rate↓

More time between pulses↓

Longer time for Cs coverage to build up

Page 31: Ion Source Development at RAL

Time Variation of Emittance:25 Hz 50 A discharge

Page 32: Ion Source Development at RAL

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Horizontal Vertical

0.000.050.100.150.200.250.300.350.400.450.50

0 500 1000 1500 2000Time (µs)

Beam Current

Nor

mal

ised

RM

S Em

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ce (π

mm

mra

d)

Nor

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S Em

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ce (π

mm

mra

d)

Page 33: Ion Source Development at RAL

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0.000.050.100.150.200.250.300.350.400.450.50

0 500 1000 1500 2000Time (µs)

Horizontal Vertical

0.000.050.100.150.200.250.300.350.400.450.50

0 500 1000 1500 2000Time (µs)

Beam Current

Nor

mal

ised

RM

S Em

ittan

ce (π

mm

mra

d)

Nor

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RM

S Em

ittan

ce (π

mm

mra

d)

Page 34: Ion Source Development at RAL

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0.000.050.100.150.200.250.300.350.400.450.50

0 500 1000 1500 2000Time (µs)

Horizontal Vertical

0.000.050.100.150.200.250.300.350.400.450.50

0 500 1000 1500 2000Time (µs)

Beam Current

Nor

mal

ised

RM

S Em

ittan

ce (π

mm

mra

d)

Nor

mal

ised

RM

S Em

ittan

ce (π

mm

mra

d)

Page 35: Ion Source Development at RAL

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0.000.050.100.150.200.250.300.350.400.450.50

0 500 1000 1500 2000Time (µs)

Horizontal Vertical

0.000.050.100.150.200.250.300.350.400.450.50

0 500 1000 1500 2000Time (µs)

Beam Current

Nor

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RM

S Em

ittan

ce (π

mm

mra

d)

Nor

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RM

S Em

ittan

ce (π

mm

mra

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Page 36: Ion Source Development at RAL

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0.000.050.100.150.200.250.300.350.400.450.50

0 500 1000 1500 2000Time (µs)

Horizontal Vertical

0.000.050.100.150.200.250.300.350.400.450.50

0 500 1000 1500 2000Time (µs)

Beam Current

Nor

mal

ised

RM

S Em

ittan

ce (π

mm

mra

d)

Nor

mal

ised

RM

S Em

ittan

ce (π

mm

mra

d)

Page 37: Ion Source Development at RAL

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0.000.050.100.150.200.250.300.350.400.450.50

0 500 1000 1500 2000Time (µs)

Horizontal Vertical

0.000.050.100.150.200.250.300.350.400.450.50

0 500 1000 1500 2000Time (µs)

Beam Current

Nor

mal

ised

RM

S Em

ittan

ce (π

mm

mra

d)

Nor

mal

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RM

S Em

ittan

ce (π

mm

mra

d)

Page 38: Ion Source Development at RAL

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0.000.050.100.150.200.250.300.350.400.450.50

0 500 1000 1500 2000Time (µs)

Horizontal Vertical

0.000.050.100.150.200.250.300.350.400.450.50

0 500 1000 1500 2000Time (µs)

Beam Current

Nor

mal

ised

RM

S Em

ittan

ce (π

mm

mra

d)

Nor

mal

ised

RM

S Em

ittan

ce (π

mm

mra

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Page 39: Ion Source Development at RAL

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Current (μA)

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0.000.050.100.150.200.250.300.350.400.450.50

0 500 1000 1500 2000Time (µs)

Horizontal Vertical

0.000.050.100.150.200.250.300.350.400.450.50

0 500 1000 1500 2000Time (µs)

Beam Current

Nor

mal

ised

RM

S Em

ittan

ce (π

mm

mra

d)

Nor

mal

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RM

S Em

ittan

ce (π

mm

mra

d)

Page 40: Ion Source Development at RAL

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0.000.050.100.150.200.250.300.350.400.450.50

0 500 1000 1500 2000Time (µs)

Horizontal Vertical

0.000.050.100.150.200.250.300.350.400.450.50

0 500 1000 1500 2000Time (µs)

Beam Current

Nor

mal

ised

RM

S Em

ittan

ce (π

mm

mra

d)

Nor

mal

ised

RM

S Em

ittan

ce (π

mm

mra

d)

Page 41: Ion Source Development at RAL

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Current (μA)

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0.000.050.100.150.200.250.300.350.400.450.50

0 500 1000 1500 2000Time (µs)

Horizontal Vertical

0.000.050.100.150.200.250.300.350.400.450.50

0 500 1000 1500 2000Time (µs)

Beam Current

Nor

mal

ised

RM

S Em

ittan

ce (π

mm

mra

d)

Nor

mal

ised

RM

S Em

ittan

ce (π

mm

mra

d)

Page 42: Ion Source Development at RAL

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Current (μA)

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0.000.050.100.150.200.250.300.350.400.450.50

0 500 1000 1500 2000Time (µs)

Horizontal Vertical

0.000.050.100.150.200.250.300.350.400.450.50

0 500 1000 1500 2000Time (µs)

Beam Current

Nor

mal

ised

RM

S Em

ittan

ce (π

mm

mra

d)

Nor

mal

ised

RM

S Em

ittan

ce (π

mm

mra

d)

Page 43: Ion Source Development at RAL

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Current (μA)

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578 µs

0.000.050.100.150.200.250.300.350.400.450.50

0 500 1000 1500 2000Time (µs)

Horizontal Vertical

0.000.050.100.150.200.250.300.350.400.450.50

0 500 1000 1500 2000Time (µs)

Beam Current

Nor

mal

ised

RM

S Em

ittan

ce (π

mm

mra

d)

Nor

mal

ised

RM

S Em

ittan

ce (π

mm

mra

d)

Page 44: Ion Source Development at RAL

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0 500 1000 1500 2000Time (µs)

Horizontal Vertical

0.000.050.100.150.200.250.300.350.400.450.50

0 500 1000 1500 2000Time (µs)

Beam Current

Nor

mal

ised

RM

S Em

ittan

ce (π

mm

mra

d)

Nor

mal

ised

RM

S Em

ittan

ce (π

mm

mra

d)

Page 45: Ion Source Development at RAL

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0.000.050.100.150.200.250.300.350.400.450.50

0 500 1000 1500 2000Time (µs)

Horizontal Vertical

0.000.050.100.150.200.250.300.350.400.450.50

0 500 1000 1500 2000Time (µs)

Beam Current

Nor

mal

ised

RM

S Em

ittan

ce (π

mm

mra

d)

Nor

mal

ised

RM

S Em

ittan

ce (π

mm

mra

d)

Page 46: Ion Source Development at RAL

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0.000.050.100.150.200.250.300.350.400.450.50

0 500 1000 1500 2000Time (µs)

Horizontal Vertical

0.000.050.100.150.200.250.300.350.400.450.50

0 500 1000 1500 2000Time (µs)

Beam Current

Nor

mal

ised

RM

S Em

ittan

ce (π

mm

mra

d)

Nor

mal

ised

RM

S Em

ittan

ce (π

mm

mra

d)

Page 47: Ion Source Development at RAL

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0.000.050.100.150.200.250.300.350.400.450.50

0 500 1000 1500 2000Time (µs)

Horizontal Vertical

0.000.050.100.150.200.250.300.350.400.450.50

0 500 1000 1500 2000Time (µs)

Beam Current

Nor

mal

ised

RM

S Em

ittan

ce (π

mm

mra

d)

Nor

mal

ised

RM

S Em

ittan

ce (π

mm

mra

d)

Page 48: Ion Source Development at RAL

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Current (μA)

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0.000.050.100.150.200.250.300.350.400.450.50

0 500 1000 1500 2000Time (µs)

Horizontal Vertical

0.000.050.100.150.200.250.300.350.400.450.50

0 500 1000 1500 2000Time (µs)

Beam Current

Nor

mal

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RM

S Em

ittan

ce (π

mm

mra

d)

Nor

mal

ised

RM

S Em

ittan

ce (π

mm

mra

d)

Page 49: Ion Source Development at RAL

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0 500 1000 1500 2000Time (µs)

Horizontal Vertical

0.000.050.100.150.200.250.300.350.400.450.50

0 500 1000 1500 2000Time (µs)

Beam Current

Nor

mal

ised

RM

S Em

ittan

ce (π

mm

mra

d)

Nor

mal

ised

RM

S Em

ittan

ce (π

mm

mra

d)

Page 50: Ion Source Development at RAL

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0.000.050.100.150.200.250.300.350.400.450.50

0 500 1000 1500 2000Time (µs)

Horizontal Vertical

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0 500 1000 1500 2000Time (µs)

Beam Current

Nor

mal

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RM

S Em

ittan

ce (π

mm

mra

d)

Nor

mal

ised

RM

S Em

ittan

ce (π

mm

mra

d)

Page 51: Ion Source Development at RAL

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Horizontal Vertical

0.000.050.100.150.200.250.300.350.400.450.50

0 500 1000 1500 2000Time (µs)

Beam Current

Nor

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RM

S Em

ittan

ce (π

mm

mra

d)

Nor

mal

ised

RM

S Em

ittan

ce (π

mm

mra

d)

Page 52: Ion Source Development at RAL

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0.000.050.100.150.200.250.300.350.400.450.50

0 500 1000 1500 2000Time (µs)

Horizontal Vertical

0.000.050.100.150.200.250.300.350.400.450.50

0 500 1000 1500 2000Time (µs)

Beam Current

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ittan

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Nor

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ittan

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mm

mra

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Page 53: Ion Source Development at RAL

500

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0.000.050.100.150.200.250.300.350.400.450.50

0 500 1000 1500 2000Time (µs)

Horizontal Vertical

0.000.050.100.150.200.250.300.350.400.450.50

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S Em

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Nor

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Page 54: Ion Source Development at RAL

500

Current (μA)

Current (μA)

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1155 µs

0.000.050.100.150.200.250.300.350.400.450.50

0 500 1000 1500 2000Time (µs)

Horizontal Vertical

0.000.050.100.150.200.250.300.350.400.450.50

0 500 1000 1500 2000Time (µs)

Beam Current

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S Em

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Nor

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Page 55: Ion Source Development at RAL

500

Current (μA)

Current (μA)

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0.000.050.100.150.200.250.300.350.400.450.50

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Horizontal Vertical

0.000.050.100.150.200.250.300.350.400.450.50

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Page 56: Ion Source Development at RAL

500

Current (μA)

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0.000.050.100.150.200.250.300.350.400.450.50

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Horizontal Vertical

0.000.050.100.150.200.250.300.350.400.450.50

0 500 1000 1500 2000Time (µs)

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Page 57: Ion Source Development at RAL

500

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1313 µs

0.000.050.100.150.200.250.300.350.400.450.50

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Horizontal Vertical

0.000.050.100.150.200.250.300.350.400.450.50

0 500 1000 1500 2000Time (µs)

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Page 58: Ion Source Development at RAL

500

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0.000.050.100.150.200.250.300.350.400.450.50

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Horizontal Vertical

0.000.050.100.150.200.250.300.350.400.450.50

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Page 59: Ion Source Development at RAL

500

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1418 µs

0.000.050.100.150.200.250.300.350.400.450.50

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Horizontal Vertical

0.000.050.100.150.200.250.300.350.400.450.50

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Page 60: Ion Source Development at RAL

500

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Current (μA)

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1470 µs

0.000.050.100.150.200.250.300.350.400.450.50

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Horizontal Vertical

0.000.050.100.150.200.250.300.350.400.450.50

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Beam Current

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Page 61: Ion Source Development at RAL

500

Current (μA)

Current (μA)

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1523 µs

0.000.050.100.150.200.250.300.350.400.450.50

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Horizontal Vertical

0.000.050.100.150.200.250.300.350.400.450.50

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Beam Current

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Page 62: Ion Source Development at RAL

500

Current (μA)

Current (μA)

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1575 µs

0.000.050.100.150.200.250.300.350.400.450.50

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Horizontal Vertical

0.000.050.100.150.200.250.300.350.400.450.50

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Page 63: Ion Source Development at RAL

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Current (μA)

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1628 µs

0.000.050.100.150.200.250.300.350.400.450.50

0 500 1000 1500 2000Time (µs)

Horizontal Vertical

0.000.050.100.150.200.250.300.350.400.450.50

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Page 64: Ion Source Development at RAL

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0.000.050.100.150.200.250.300.350.400.450.50

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Page 65: Ion Source Development at RAL

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1733 µs

0.000.050.100.150.200.250.300.350.400.450.50

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Horizontal Vertical

0.000.050.100.150.200.250.300.350.400.450.50

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Page 66: Ion Source Development at RAL

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1785 µs

0.000.050.100.150.200.250.300.350.400.450.50

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Horizontal Vertical

0.000.050.100.150.200.250.300.350.400.450.50

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Page 67: Ion Source Development at RAL

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1838 µs

0.000.050.100.150.200.250.300.350.400.450.50

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Horizontal Vertical

0.000.050.100.150.200.250.300.350.400.450.50

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Page 68: Ion Source Development at RAL

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1890 µs

0.000.050.100.150.200.250.300.350.400.450.50

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Horizontal Vertical

0.000.050.100.150.200.250.300.350.400.450.50

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Beam Current

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S Em

ittan

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Page 69: Ion Source Development at RAL

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0.000.050.100.150.200.250.300.350.400.450.50

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Horizontal Vertical

0.000.050.100.150.200.250.300.350.400.450.50

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Beam Current

Nor

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S Em

ittan

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Nor

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RM

S Em

ittan

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Page 70: Ion Source Development at RAL

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1995 µs

0.000.050.100.150.200.250.300.350.400.450.50

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Horizontal Vertical

0.000.050.100.150.200.250.300.350.400.450.50

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Beam Current

Nor

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S Em

ittan

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S Em

ittan

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Page 71: Ion Source Development at RAL

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2048 µs

0.000.050.100.150.200.250.300.350.400.450.50

0 500 1000 1500 2000Time (µs)

Horizontal Vertical

0.000.050.100.150.200.250.300.350.400.450.50

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Beam Current

Nor

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ittan

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ittan

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Page 72: Ion Source Development at RAL

Time variation of Emittance Parameters for different conditions:

Phase space rotation caused by decompensation of the beam

HO

RIZ

ON

TAL

VE

RTI

CA

L

Normalised RMS Emittance Twiss Alpha Twiss Beta

Page 73: Ion Source Development at RAL

IB8π2εHεV

Beam Brightness =

Page 74: Ion Source Development at RAL

ISIS Source around the World

Chinese Spallation Neutron Source ESS Bilbao

Page 75: Ion Source Development at RAL

CERN SLHC-pp Source  DESY Linac4 LP-SPL HP-SPL

H- current (mA) 40 80 80 80RF peak power (kW) 30 100 100 100RF frequency (MHz) 2 2 2 2Repetition rate (Hz) 3 2 2 50Pulse length (ms) 0.15 0.4 1.2 0.4 - 1.2duty factor (%) 0.045 0.08 0.24 2 – 6Average RF power (W) 13.5 80 240 2000 - 6000

THE CHALLENGE:Over 3 times increase in powerOver 100 times increase in d.f.

Page 76: Ion Source Development at RAL

Modelling and Prototyping

Page 77: Ion Source Development at RAL

1.2 ms pulse length at 50 Hz 50 kW plasma stable

Page 78: Ion Source Development at RAL

The Future• Up-rated power supplies• Better understanding of the plasma

- PhD research project with JAI

- Optical spectroscopy- Plasma modelling

• Scaled source• Understand lifetime limitations

Page 79: Ion Source Development at RAL

Thank you for your attention

Questions, Comments?