Ion implantation effects in sapphire-Poster for advisory meeting at utk
1
ION IMPLANTATION EFFECTS IN SAPPHIRE Younes Sina a , Uk Huh a , Carl J. McHargue b a Material Science and Engineering Dep., The University of Tennessee, Knoxville, TN, 37996-2200, USA b Center for Materials Processing, The University of Tennessee, Knoxville, TN, 37996-0750 , USA Abstract We are grateful for the guidance and help received from: Dr. Gerd Duscher for providing the TEM data using ORNL facilities; Dr. Y. Zhang and S. Shutthananadan for assistance in obtaining RBS spectra for B-implanted samples at PNNL; Dr. E. Alves, ITN, Portugal for assistance in implantation; Dr. C Muntele, AAMU, for optical measurements. Acknowledgement Introduction References [1] C. J. McHargue, G. C. Farlow, C. W. White, J. M. Williams, B. R. Appleton, and H. Naramoto., Materials Science and Engineering, 69 (1985) 123-127 [2] C.W. White, C.J. McHargue, P.S. Sklad, L.A. Boatner, and G.C. Farlow, Materials Science Reports, Ion Implantation and Annealing of Crystalline Oxides, Vol.4,No 2,3 July 1989, North Holland Amsterdam [3] C. J. McHargue, E. Alves, C. Marques, L.C. Ononye, Comparison of the damage in sapphire due to implantation of boron, nitrogen, and iron , Journal of Nuclear Materials 389 (2009) 311-316 [4] Carl J. McHargue, E. Alves, L.C. Ononye, C. Marques, Nuclear Instruments and Methods in Physics Research B 250 (2006) 81-84 High Angle Dark Field image of Zr implanted α-Al 2 O 3 RBS-C spectra from <0001> oriented α-Al 2 O 3 crystals implanted by 90 Zr (175 keV, 4×10 16 /cm 2 ) Sapphire (single crystalline α- Al 2 O 3 ) generally is very resistant to irradiation damage and high levels of implanted cations often precipitate as nanometer sized second phases. One or more unidentified “chemical effect” has been reported for the implantation into sapphire of boron (a light ion) and zirconium (a heavy ion). Zirconium-implantation produced a sub-surface amorphous layer at energies and fluencies that other ions of similar mass only produce a highly damaged crystalline zone. Boron- implantation produced a much higher concentration of oxygen vacancies (color centers) and residual disorder in the Al- sublattice than ions of lighter and heavier masses. This study seeks to identify the nature of the defects produced during implantation and their interaction with the implanted species. In order to study the amorphization of sapphire during room temperature ion implantation with zirconium ions and study of damages using boron ions , sapphire single crystals were implanted with zirconium (175 keV) and boron (150 keV ) at room temperature to fluences of 4×10 16 Zr + /cm 2 and 5×10 15 to 1×10 17 B + /cm 2 . RBS-C, XRD and PL for all samples as well as EELS and aberration corrected TEM spectra for the zirconium implanted sapphire were studied. Results from a standard SRIM Monte Carlo simulation were analyzed to be in a good agreement with experimental results. It is concluded that Zr forms Zr clusters in the amorphous region where α-Al 2 O 3 now has γ-Al 2 O 3 short range order. RBS-C was indicated a high density of defects without the complete loss of crystallinity in case of boron implanted sapphire. BORON RESULTS ZIRCONIUM RESULTS The Al 2 O 3 L-edge with 2 peaks shows γ-Al 2 O 3 structure eV 0 20 40 60 80 100 120 140 160 180 200 220 240 260 280 60 70 80 90 100 110 120 eV bkgd Slice0 Bkgd Edge 1 eV 10 20 30 40 60 70 80 90 100 110 120 eV bkgd Slice0 Bkgd Edge eV 0 10 20 30 40 50 60 70 80 90 100 110 450 500 550 600 650 700 eV bkgd Slice0 Bkgd Edge 1 Amorphous region 1 2 EELS spectra shows oxygen deficiency SRIM simulation shows Zr ions distribution 0 5 10 15 20 25 30 35 200 220 240 260 280 300 Wavelength (nm) 0 50 100 150 200 250 300 190 240 290 340 Wavelength (nm) Photoluminescence spectra of Zr + implanted sapphire show F- and F + -centers Amorphous region SRIM simulation shows B ions distribution RBS-C spectra from <0001> oriented α-Al 2 O 3 crystals implanted by 11 B(150 keV, 5×10 16 -1×10 17 / m 2 ) Photoluminescence spectra of B + implanted sapphire show F and F + centers Optical absorption spectra of B + implanted sapphire show F- and F + -centers 1 1.5 2 2.5 3 3.5 190 210 230 250 270 1X10to16 B/cm2 5X10to16 B/cm2 1X10to17 B/cm2 Absorption (a.u.) Wavelength (nm) -45 -40 -35 -30 -25 -20 -15 -10 -5 0 220 230 240 250 260 270 280 5X10to15 B/cm2 1X10to16 B/cm2 Emission at 325 nm Absorption (a.u.) Wavelength (nm) 0 2 4 6 8 10 12 14 16 18 20 220 240 260 280 5X10to15 B/cm2 1X10to16 B/cm2 1X10to17 B/cm2 Emission at 420 nm Absorption (a.u.) Wavelength (nm) PL Intensity (au) PL Intensity (au) Emission at 325 nm F F + Disorder in Al and O sublattice appears to saturate at 5×10 16 B + /cm 2 F F + F + F Energy (keV) 0 200 400 600 800 1000 1200 Yield 0 1000 2000 3000 4000 5000 6000 5×1015 borons/cm2 1×1016 borons/cm2 5×1016 borons/cm2 1×1017 borons/cm2 Virgin Random
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Ion implantation effects in sapphire, younes sina, Poster for advisory meeting, UTK
Transcript of Ion implantation effects in sapphire-Poster for advisory meeting at utk
ION IMPLANTATION EFFECTS IN SAPPHIRE
Younes Sina a, Uk Huh a, Carl J. McHargue b a Material Science and Engineering Dep., The University of Tennessee, Knoxville, TN, 37996-2200, USA b Center for Materials Processing, The University of Tennessee, Knoxville, TN, 37996-0750 , USA
Abstract
We are grateful for the guidance and help received from: Dr. Gerd Duscher for providing the TEM data using ORNL facilities; Dr. Y. Zhang and S. Shutthananadan for assistance in obtaining RBS spectra for B-implanted samples at PNNL; Dr. E. Alves, ITN, Portugal for assistance in implantation; Dr. C Muntele, AAMU, for optical measurements.
Acknowledgement
Introduction
References
[1] C. J. McHargue, G. C. Farlow, C. W. White, J. M. Williams, B. R. Appleton, and H. Naramoto., Materials Science and Engineering, 69 (1985) 123-127 [2] C.W. White, C.J. McHargue, P.S. Sklad, L.A. Boatner, and G.C. Farlow, Materials Science Reports, Ion Implantation and Annealing of Crystalline Oxides, Vol.4,No 2,3 July 1989, North Holland Amsterdam [3] C. J. McHargue, E. Alves, C. Marques, L.C. Ononye, Comparison of the damage in sapphire due to implantation of boron, nitrogen, and iron , Journal of Nuclear Materials 389 (2009) 311-316 [4] Carl J. McHargue, E. Alves, L.C. Ononye, C. Marques, Nuclear Instruments and Methods in Physics Research B 250 (2006) 81-84
High Angle Dark Field image of Zr implanted α-Al2O3
RBS-C spectra from <0001> oriented α-Al2O3 crystals implanted by
90Zr (175 keV, 4×1016 /cm2)
Sapphire (single crystalline α- Al2O3) generally is very resistant to irradiation damage and high levels of implanted cations often precipitate as nanometer sized second phases. One or more unidentified “chemical effect” has been reported for the implantation into sapphire of boron (a light ion) and zirconium (a heavy ion). Zirconium-implantation produced a sub-surface amorphous layer at energies and fluencies that other ions of similar mass only produce a highly damaged crystalline zone. Boron- implantation produced a much higher concentration of oxygen vacancies (color centers) and residual disorder in the Al- sublattice than ions of lighter and heavier masses. This study seeks to identify the nature of the defects produced during implantation and their interaction with the implanted species.
In order to study the amorphization of sapphire during room temperature ion implantation with zirconium ions and study of damages using boron ions , sapphire single crystals were implanted with zirconium (175 keV) and boron (150 keV ) at room temperature to fluences of 4×1016 Zr+/cm2 and 5×1015 to 1×1017 B+/cm2. RBS-C, XRD and PL for all samples as well as EELS and aberration corrected TEM spectra for the zirconium implanted sapphire were studied. Results from a standard SRIM Monte Carlo simulation were analyzed to be in a good agreement with experimental results. It is concluded that Zr forms Zr clusters in the amorphous region where α-Al2O3 now has γ-Al2O3 short range order. RBS-C was indicated a high density of defects without the complete loss of crystallinity in case of boron implanted sapphire.
BORON RESULTS ZIRCONIUM RESULTS
The Al2O3 L-edge with 2 peaks shows γ-Al2O3 structure
Counts
x 1
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eV
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bkgd
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eV
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bkgd
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bkgd
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Bkgd
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1 2
EELS spectra shows oxygen deficiency
SRIM simulation shows Zr ions distribution
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Wavelength (nm)
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Wavelength (nm)
Photoluminescence spectra of Zr+ implanted sapphire show F- and F+-centers
Amorphous region
SRIM simulation shows B ions distribution
RBS-C spectra from <0001> oriented α-Al2O3 crystals implanted by
11B(150 keV, 5×1016 -1×1017 / m2)
Photoluminescence spectra of B+ implanted sapphire show F and F+ centers
Optical absorption spectra of B+ implanted sapphire show F- and F+-centers
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1.5
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190 210 230 250 270
1X10to16 B/cm2
5X10to16 B/cm2
1X10to17 B/cm2
Ab
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rpti
on
(a.u
.)
Wavelength (nm)
-45
-40
-35
-30
-25
-20
-15
-10
-5
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220 230 240 250 260 270 280
5X10to15 B/cm2
1X10to16 B/cm2
Emission at 325 nm
Ab
so
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.)
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5X10to15 B/cm2
1X10to16 B/cm2
1X10to17 B/cm2
Emission at 420 nm
Ab
so
rpti
on
(a
.u.)
Wavelength (nm)
PL
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ten
sit
y (
au
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PL
In
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au
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Emission at 325 nm
F F+
Disorder in Al and O sublattice appears to saturate at 5×1016 B+/cm2
F
F+
F+ F
RBS spectrum along <0001> direction in single crystal sapphire
Energy (keV)
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Yie
ld
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5×1015 borons/cm2
1×1016 borons/cm2
5×1016 borons/cm2
1×1017 borons/cm2
Virgin
Random
