Introduction to VLSI Design

download Introduction to VLSI Design

of 33

description

VLSI Design Challenge• Increasing productivity yield• Shorter design cycle with more product feature• Reduce NRE (Non-Recursive Engineering Cost)• Design reuse enable• Increase flexibility to design changes• Faster exploitation of alternative architecture• Faster exploitation of alternative libraries• Better & Easier design auditing & verification

Transcript of Introduction to VLSI Design

  • Introduction to VLSI DesignIntroduction to VLSI DesignIntroduction to VLSI DesignIntroduction to VLSI Design

    Typical Design Flow High Level Design Low Level Designg

    S. Choomchuay, Ph.D.Intro. to VLSI Design S. Choomchuay //KMITL 1

    y,

  • R l f ChiR l f ChiRole of ChipsRole of Chips

    IdIdea

    Circuit DesignCircuit DesignApplicationsApplications

    gg

    FabricationFabrication

    Intro. to VLSI Design S. Choomchuay //KMITL 2

  • VLSI Design ChallengeVLSI Design ChallengeVLSI Design ChallengeVLSI Design Challenge

    I l Increasing productivity yield Shorter design cycle with more product feature Reduce NRE (Non Recursive Engineering Cost) Reduce NRE (Non-Recursive Engineering Cost) Design reuse enable Increase flexibility to design changesy g g Faster exploitation of alternative architecture Faster exploitation of alternative libraries

    B & E i d i di i & ifi i Better & Easier design auditing & verification

    Intro. to VLSI Design S. Choomchuay //KMITL 3

  • Development HistoryDevelopment HistoryDevelopment HistoryDevelopment History

    SiliconGermaniumSemiconductorVacuum tube

    SiliconGermanium

    Discrete Small IC LSI VLSI

    Metal Base PCB Chip

    10-50 / 6"x9" 10-50 /2x2 mm 10000-100000/1x1 cm

    Y1906 1930 1951 19751961 1969Intro. to VLSI Design S. Choomchuay //KMITL 4

    Year1906 1930 1951 19751961 1969

  • IC Design & FabricationIC Design & FabricationIC Design & FabricationIC Design & Fabrication

    circuit designDesign ToolsSim Toolscircuit design

    &simulation

    Layout (pattern)Design & synthesis

    Sim. Tools

    Design Tools

    Fabrication

    Design ToolsSim. Tools

    Mask Set

    ProcessAssembly

    &Material &Equipments

    IC Chips&Packaging

    Equipmentsp

    Intro. to VLSI Design S. Choomchuay //KMITL 5

  • Digital Circuit ConceptDigital Circuit ConceptDigital Circuit ConceptDigital Circuit Concept

    S l V ltSwitch 1

    Supply Voltage

    Switch 2 Control

    u

    r

    r

    e

    n

    t

    Result

    C

    Switch 3 Switch 4

    Result

    SwitchSwitch

    Intro. to VLSI Design S. Choomchuay //KMITL 6

  • Switch & TechnologySwitch & TechnologySwitch & TechnologySwitch & Technology

    Bipolar

    Speed = ?Dissipation = ?Dissipation = ?

    Mi dMi dMOSMOS

    MixedMixed(BiCMOS)(BiCMOS)

    Intro. to VLSI Design S. Choomchuay //KMITL 7

  • IC ProcessIC ProcessIC ProcessIC ProcessWafers

    Mask Set

    Protectivecover

    SelectivePatterning

    ImplantDope

    Wafers

    cover Patterning Dope

    STEPS ?STEPS ?

    Front End

    Di i B di M ldiDicing Bonding Molding

    B k E dIntro. to VLSI Design S. Choomchuay //KMITL 8

    Back End

  • IC FabricationIC FabricationIC FabricationIC Fabrication3"- 8"

    IC

    Silicon WaferIC

    PROCESSWater

    Clean RoomWater

    Air T t tCVDAir

    E i

    Treatment ImplanterStepperE-Beam

    Environment Machines&

    Tools

    Furnace

    Intro. to VLSI Design S. Choomchuay //KMITL 9

    Tools

  • Process Keyword (1)Process Keyword (1)y ( )y ( )

    O id tiO id tiOxidationOxidation

    SiSi SiSi SiSi

    siosio22SiSi SiSi SiSi

    - Thermal-CVD

    ImplantationImplantation

    A liIntro. to VLSI Design S. Choomchuay //KMITL 10

    Annealing

  • Process Keyword (2)Process Keyword (2)y ( )y ( )

    Ph t lith hPh t lith hPhotolithographyPhotolithographyUV light, Electron Beam

    PhotoresisPhotoresisSiOSiO22

    MASK

    SiPatterning

    Developed

    Etching &Strip off

    Intro. to VLSI Design S. Choomchuay //KMITL 11

    p

  • Behavioural Level of AbstractionBehavioural Level of AbstractionBehavioural Level of AbstractionBehavioural Level of Abstraction

    SystemConceptConceptAlgorithm

    ArchitectureArchitectureRTLGateGate

    TransistorRTL = Register Transfer Level

    Intro. to VLSI Design S. Choomchuay //KMITL 12

    RTL = Register Transfer Level

  • VLSI D i D iVLSI D i D iVLSI Design DomainVLSI Design Domain

    Abstract Structure Physical

    Design DomainLevel ofAbstraction

    ArchitectureDesignAlgorithm

    System StructuralSynthesis

    RTL LevelSynthesisStructural

    DesignLogic

    g

    RTLSynthesis

    Logic LevelSynthesisVerification

    gDesign

    LayoutDesign (Syn)

    Logic

    GateVerification

    V ifi tig

    Verification

    Intro. to VLSI Design S. Choomchuay //KMITL 13

  • VLSI Low Level DesignVLSI Low Level DesignVLSI Low Level DesignVLSI Low Level DesignTypical Design FlowSpec

    DesignHigh Level

    p

    SimulationMaskSets

    High LevelModel

    i l

    Logic Simulation

    Logic LevelModel

    LogicSynthesis

    Simulation

    Place & RoutePLD,FPGA

    Intro. to VLSI Design S. Choomchuay //KMITL 14Cell Library

  • VLSI Low Level DesignVLSI Low Level DesignVLSI Low Level DesignVLSI Low Level DesignCell Library Design

    LogicDesign

    DRC

    SimulationLayoutDesign

    Extraction

    SimulationLogic Level

    Model

    SimulationCircuitDesign

    MasksDeviceDevice Level Model

    Intro. to VLSI Design S. Choomchuay //KMITL 15

  • Top Down DesignTop Down Design

    System Level

    Board Level

    Chip LevelRTL

    S th iC p eve Synthesis

    Layout Synthesis

    Intro. to VLSI Design S. Choomchuay //KMITL 16

  • HDL Synthesis ToolsHDL Synthesis ToolsVHDL

    1980 VSHIC D D P j 1980 VSHIC, DoD Project 1983 IBM and TI joint project 1987 DoD and IEEE1076 Standards 1993 Revise of IEEE1076 1996 Extend to 1076.3 and 1076.4

    Verilog 1981 CAE software launched by Dateway Design Auto.

    (founded by Phil Mooreby) 1983 Release of Verilog HDL 1987 Extended to Verilog XLg 1989 Verylog XL is widely used 1990 Cadence bought Gateway 1995 Verilog --> IEEE1364

    Intro. to VLSI Design S. Choomchuay //KMITL 17

    1995 Verilog IEEE1364

  • Synthesis OptimisationSynthesis Optimisation

    VHDL/VerilogVHDL/VerilogCriteria

    Synthesis(Translation)

    Area&

    TimingAnalysis

    Optimisationmodule

    Constraints Analysis

    Netlist

    Intro. to VLSI Design S. Choomchuay //KMITL 18

  • Synthesis ConstrainsSynthesis ConstrainsSynthesis ConstrainsSynthesis Constrains

    Global Circuit SpecificationGlobal Library process factor Operating voltage

    Circuit Specification Area- max areaOperating voltage

    Operating temperature Timing- fan-in, fan-out- I/p & o/p loading cap.p p g p- Max.clock frequency

    Power- max powermax. power

    Testability- Full or partial scan

    Boundary scan- Boundary scan

    Intro. to VLSI Design S. Choomchuay //KMITL 19

  • Layout DesignLayout DesignLayout DesignLayout DesignCircuit Level Design

    Static Complement MOSStatic Complement MOS- Conventional Circuit

    Dynamic LogicDynamic Logic- Clock CMOS- Domino Logic

    Intro. to VLSI Design S. Choomchuay //KMITL 20

  • Layout DesignLayout DesignLayout DesignLayout DesignConventional static gate

    (Complementary)CC

    A B NMOS chain implements the functionY

    NMOS chain implements the function PMOS chain is a complementaryarrangement of N-Chain

    A

    B

    C

    g Output is taken at the center

    B CBAY += )(Intro. to VLSI Design S. Choomchuay //KMITL 21

  • Layout DesignLayout DesignLayout DesignLayout DesignActual MOS Devices

    Gate (Control)

    (N)(N)

    Silicon(P)

    = ? micronGate

    Intro. to VLSI Design S. Choomchuay //KMITL 22

  • Layout DesignLayout DesignLayout DesignLayout DesignMOS Parameters

    WW

    Tox

    Silicon(P)

    (N)(N)

    L2)( VVKIW/L defines MOS current

    K = Process Transconductance

    2)( TGSD VVKI =)]([2

    1LW

    OXCK =

    Intro. to VLSI Design S. Choomchuay //KMITL 23

  • Layout DesignLayout Design W Channel WidthL Channel LengthMOS Device Model

    S DG

    L Channel LengthAD, AS Drain,Source AreaPD,PS Drain,Source Periphery

    S DG

    (N)(N)W

    Substrate (P)

    ( )( )

    v AS AD

    Sub

    vG

    Cgs CgdCgsub

    L

    SubvS vDggsub

    iD

    Intro. to VLSI Design S. Choomchuay //KMITL 24vSub

  • Actual MOS DeviceActual MOS DeviceActual MOS DeviceActual MOS DeviceInverter, X-section

    I/P

    GND VddO/P

    p pn np nP Well

    N-Type Substrate

    Intro. to VLSI Design S. Choomchuay //KMITL 25

  • Actual MOS DeviceActual MOS DeviceActual MOS DeviceActual MOS DeviceInverter, X-section

    Vdd

    p

    n

    I/P O/P

    p

    S

    u

    b

    s

    t

    r

    a

    t

    e

    n

    N

    -

    T

    y

    p

    e

    S

    W

    e

    l

    l

    GND

    n

    p

    P

    InverterCircuit

    ActualX-Section

    LayoutDesign

    Intro. to VLSI Design S. Choomchuay //KMITL 26

    Circuit X-Section Design

  • LL--Edit, Tricky bitsEdit, Tricky bitsLL Edit, Tricky bitsEdit, Tricky bitsNOR 2-input (N well)

    Only one active, We have to say N-active or P-active Poly Contact or Active Contact (both to metal) Substrate ties Substrate ties Port names need for extraction (simulation)( ) DRC needs

    Intro. to VLSI Design S. Choomchuay //KMITL 27

  • Low Level Design, DRCLow Level Design, DRCLow Level Design, DRCLow Level Design, DRCWhat does it say?

    Minimum features size(Layers & wire)2x2

    Minimum spacing between2 objects

    Define in base & micron Define in base & micronbase

    2

    Intro. to VLSI Design S. Choomchuay //KMITL 28

  • Low Level DesignLow Level DesignLow Level DesignLow Level DesignStick Diagram

    Color stick objects represent layer and routing

    Intro. to VLSI Design S. Choomchuay //KMITL 29

  • Low Level DesignLow Level DesignLayer design guide

    LayerLayer RR CC CommentsCommentsMetal Low Low Power distributionMetal Low Low Power distribution

    Global SignalLong wiringg g

    Polysilicon Low Moderate High IR dropModerate RC productModerate RC product

    Diffusion Moderate High High CapacitanceModerate IR dropModerate IR drop

    Intro. to VLSI Design S. Choomchuay //KMITL 30

  • Low Level DesignLow Level DesignMOS as RC

    WA

    B

    t

    L

    B

    LLLR )(WWtA

    R

    pn

    sAB

    1;1

    )(

    ==

    ===r

    SubG tWLC )(0=

    NMOSLWnq

    R

    pqnq

    nAB

    pp

    n

    )(1 =

    OXTWLCg

    t)(=

    Intro. to VLSI Design S. Choomchuay //KMITL 31

    LRAB

  • Low Level DesignLow Level DesignComplement Logic Switch

    PMOSPMOSchain RP

    NMOSchain

    RnnCg

    Intro. to VLSI Design S. Choomchuay //KMITL 32

  • Low Level DesignLow Level DesignLow Level DesignLow Level DesignSTD Cell Style

    All Cells are same height Width can be varied Power rails (left-right)

    Signals (top bottom) Signals (top, bottom) Routing channels outside

    Intro. to VLSI Design S. Choomchuay //KMITL 33