Integrated Fabrication and Modeling with CoolSpiceneil/SiC_Workshop/Presentations_2016... ·...
Transcript of Integrated Fabrication and Modeling with CoolSpiceneil/SiC_Workshop/Presentations_2016... ·...
Circuit Modeling and Fabrication Guided by CoolSPICE
Brendan CusackZ. Dilli, M. Gross, A. Akturk,N. Goldsman, J. McGarrity
Research supported by ARL and NASA
CoolSPICE Assisted Circuit Design and Fabrication
1. Device Simulation
2. Process Design/Device Fabrication
3. Device Characterization and Model Development
4. Circuit Design and Fabrication
5. Circuit Characterization
Step 1: Device Simulation of MOSFET using CoolSPICE
SD
G B
VS1Enable=YVdc=3Vac=
VS2Enable=Y
Vdc=5Vac= Imeter1
GND
• Initial simulation performed using device simulator integrated into CoolSPICE
• Use drift-diffusion model and Poisson Equation to determine:
• Potential• Electron/Hole concentration• Electron/Hole current density
• Determination of internal characteristics and terminal currents given Vg, Vs, Vd, Vb
• Device Simulation provides:• Epi-layer doping• Source/Drain/Body implant • Gate oxide thickness
Step 2: CoolCADMOSFET Fabrication
• Process Design Kit Developed
• Devices are fabricated using University of Maryland NanoFabcenter and in-house facilities
Step 2: Process Development & Optimization
Process Control– Implantation– Activation– Oxidation – POA– Contact Formation– Metallization
Step 3: Device Characterization and Model Development with CoolSPICE:
CoolCAD SiC MOS Process
TCAD Device SimulationExperimetal Data
CoolSpiceExperimetal Data
TCAD Simulation and Data CoolSPICE Model and Data
Step 4: Silicon Carbide OpAmp:Design and Simulation with CoolSpice
VSin1
Amplitude=0.1Frequency=1k
Transient Run Enable=YTime Step=0.01mEnd Time=10mStart Time=0Max Step=0.01m
SD
G BN1AuMOS_20nm
W=21uL=10u
SD
GBN2AuMOS_20nm
W=21uL=10u
SD
G BN3AuMOS_20nm
W=40uL=10u
R2Value=500k
VS1Enable=YVdc=5Vac=
VS3Enable=YVdc=2Vac=
GND
VS2Enable=YVdc=5.0Vac=
R3Value=100k
SD
G BN4AuMOS_20nm
W=40uL=10u
SD
G BN5AuMOS_20nm
W=40uL=10u
R4Value=200k
Vmeter3
.op=-9.23e-001
SD
G BN6AuMOS_20nm
W=40uL=10u
R5Value=150k
V
.op=1.27e
CV
R1Val
R6Val
Step 4: Circuit Simulation Results Input vs. Output
CoolSPICE graphical output of circuit design on previous slide
Step 5: CoolCAD Chip Design and Layout
Finalized Layout, Masks Development, Chip in Process (estimated completion in 2 months)
CoolSPICE: Make Your SiC Circuits “Great Again”
• CoolSPICE facilitates SiC circuit design and fabrication– PDK Development:
• DRC, LVS, SPICE Models– Identify key device parameters for:
• Process optimization• Circuit optimization
• Develop circuits for SiC power electronics– Gate Drivers– Power Converters
Thank you• CoolSpiceSim.com• CoolCADElectronics.com