INP HENIX - cioe.cn 于40G100G 系统的... · PDF fileModulator/ WL converter: ......
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INPHENIX
CIOE-2011
用于用于用于用于40G/100G系统的半导体光放大器研究系统的半导体光放大器研究系统的半导体光放大器研究系统的半导体光放大器研究
李同宁
September 7, 2011
Delivering Innovative Light Sources and Optical
Amplifiers for the Medical, Telecom and Sensor Markets
www.inphenix.com
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INPHENIX
CIOE-2011
• Introduction ( 背景介绍背景介绍背景介绍背景介绍))))
• SOA Design & Manufacture((((设计制造设计制造设计制造设计制造))))
• Applications((((应用应用应用应用))))
• Conclusion(((( 结论结论结论结论))))
Contents
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Introduction
� Standard IEEE P802.ba is 100GBASE-LR4
100Gb/s=25Gb/sx4,wavelengths:1295nm,1300 nm,1305 nm, 1310 nm for 10 km transmission.
� 100GBASE-ER4: Reach extension of 100GBASE-
LR4 to at least 40 km by using SOA
� ITU-T G.984.6
Gigabit-capable passive optical networks (GPON)
Reach extension by using SOA
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Introduction
40 km
SMF
100 G
25G
PIN
25G
PIN
25G
PIN
25G
PIN
25G
EML
25G
EML
25G
EML
25G
EML
1295 nm
1300 nm
1305 nm
1310 nm
M
U
X
D
E
M
U
X
S
O
A
Fig. 1 100 G (25 G × 4) Optical Transmission Configuration
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SOA Design
Special Active layer + Tilt-Waveguide+AR coating
P-clad
N-clad
Active layer
Input signal
Current
Output signal
Active layer
AR
coating
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SOA Design
Key Parameters to Characterize SOA
� Small Signal Gain (Gs)
� Gain Bandwidth
� Gain Ripple
� Saturation Output Power (Psat)
� Noise Figure (NF)
� Polarization Dependent Gain (PDG)
� Switching Time
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Wavelength
Amplitude
SOA Design
SOA 设计基本原则
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SOA Design
半导体能带结构
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SOA Design偏振无关的SOA设计
TE TM
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∂∂
Γ
−=
ng
wd
G
GhP
s
c
f
sat/
1
2
2ln
0
0
την
G0: Small-signal SOA gain
g: Material gain
L: Cavity length
d: Active layer thickness
w: Active region width
ν: Optical frequency
Γ: Active region optical confinement factor
τs: Carrier lifetime
dg/dn : Differential gain (with respect to carrier density n)
h: Planck constant
ηc: Chip-fiber coupling coefficient
SOA Technologies饱和输出功率 Psat
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SOA Design
F=(SNR)in/(SNR)out
噪声指数 F
1. Amplified Signal Shot Noise
2. Spontaneous Emission Shot Noise
3. Signal-spontaneous Beat Noise
4. Spontaneous-spontaneous beat noise
5. Intrinsic Internal Loss
6. Coupling Efficiency
( ) ( )22
2
2
112 fm
n
n
G
Gn
G
GGF t
in
sp
sp ∆−
+−
= χ
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MOCVD Wafer Test Chip Proc.
CoatingTestingSubmount
Burn-in Package Final Test
SOA Manufacture
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SOA Manufacture
-0.5
0
0.5
1
100 150 200 250 300
Injection Current (mA)
Ratio of TE/TM Power (dB)
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CIOE-2011
• Achieved Performance of 1300nm~1500nm SOA
– Bandwidth: 60nm ~ 100nm
– Gain: 20dB ~ 25dB
– Psat : 11dBm ~15dBm
– PDG: < 1dB
– NF : < 7dB
• Package Cost:
– 14 PIN BUT as Standard
– Integration: Hybrid and Monolithic
• Quality & Reliability:
– Inphenix’s SOAs are Telcordia qualified
SOA Manufacture
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1310nm SOA Life time test curve Accelerated Aging at 85 dgree
0.00%
10.00%
20.00%
30.00%
40.00%
50.00%
60.00%
70.00%
80.00%
90.00%
100.00%
110.00%
0 480 960 1440 1920 2400 2880 3360 3840 4320 4800
Aging Time (h)
Relative Power 1
2
3
4
5
6
7
SOA Manufacture
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Test Sample Size Test Status
Mechanical Shock 11 Passed
Vibration 11 Passed
Thermal Shock 11 Passed
Accelerated Aging 50 Passed
High Temperature Storage 11 Passed
Temperature Cycling (un-biased) 11 Passed
ESD Threshold 6 Passed
Fiber Pull 11 Passed
Solderability 11 Passed
Flammability from vendor
Life time for InP based devices > 530K hrs finished
Life time for GaAs based devices > 10K hrs In Accel. Aging proc.
Reliability & Environmental
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SOA Application
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Critical Specification in application:
1. Power booster : high Psat
2. In-line amplifier : high gain
3. Preamplifier: low noise figure
4. Modulator/ WL converter: fast rise/fall time
5. Switch/Logic gate: on/off ratio & extinguish ratio
Application Requests
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Application in 100G-RE
� Lower Noise Figure (NF) is required
� Higher saturation power (Psat)
� Gain flatness for multi-channel signals
Key Design Parameters of SOA for Reach Extension
1. 100 G Ethernet Applications
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Parameter Unit Value
Wavelength Range nm 1480 - 1500
Minimum Input Power at OLT Port dBm - 23
Minimum Optical gain dB 23
Minimum Optical Gain Ripple dB 2
Minimum Saturation Output Power dB 8
Maximum Noise Figure dB 9.5
Parameter Unit Value
Wavelength Range nm 1290 - 1320
Minimum Input Power at ONT Port dBm - 28
Minimum Optical gain dB 26
Minimum Optical Gain Ripple dB 4
Minimum Saturation Output Power dB 7
Maximum Noise Figure dB 8
Downstream
Upstream
Application in 100G-RE
2. GPON Reach Extension
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� The world-first live demonstration of 112 Gbit/s transmission
over 40 km single-mode fiber was conducted by Opnext
using an InPhenix 1310 nm Semiconductor Optical Amplifier
(SOA) during OFC 2011 held at the Los Angeles Convention
Center March 8-10.
� This realization is in compliance with 100 Gbit/s (4 channel x
25 Gbit/s) Ethernet applications (Standard IEEE 100GBASE-
ER4). The transmission distance, previously limited to only
10 km, has been extended successfully to 40 km by
integrating an Inphenix SOA as a pre-amplifier.
Application in 100G-RE
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Parameter
Unit
Min
Typ.
Max
Peak wavelength λp nm 1280 1300 1320
3 dB Optical Bandwidth nm 45
Small Signal Gain at λp dB 18 20
Operation Current mA 250
Gain Ripple dB 1
Saturation Output Power dBm 10
Polarization Dependent Gain dB 1
Noise Figure dB 7
Inphenix SOA in Opnext’s demonstration of 100 G system
Application in 100G-RE
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Transmitter SOA Receiver
4 wavelengths
× 25 Gb/s
Channel output
~ -1.4 dBm
Gain
~ 12 dB
Loss 6.3 dB
10 km
40 km
SM fiber
~ -7.7 dBm ~ - 19.4 dBm ~ - 7.4 dBm
Extra loss 11.7 dB
The extra transmission loss of 11.7 dB induced by
extending the fiber length from 10 km to 40 km which is compensated by the SOA gain of roughly 12 dB.
R. Arima et al., “Demonstration of World-First 103 Gbit/s Transmission over 40 km Single Mode Fiber by 1310 nm LAN-WDM Optical Transceiver for 100GBE”, OFC 2011, JWA9.
Application in 100G-RE
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SOA
25G
PIN
25G
PIN
25G
PIN
25G
PIN
1295 nm
1300 nm
1305 nm
1310 nm
1295 nm
1300 nm
1305 nm
1310 nm
DEMUX
Integrated Technology of SOA
Project: integration of SOA chip, Demultiplexer, and PDs in a PLC platform
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Integrated Technology of SOA
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•
Integrated Technology of SOA
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Integrated Technology of SOA
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Integrated Technology of SOA
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INPHENIX
CIOE-2011Fujitsu OWE2 OFCNFOEC 2008
Monolithically–integrated 8:1 SOA gate
Integrated Technology of SOA
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Conclusions
� SOA has a potential for significantly extending the
transmission distance of optical network systems, especially
for higher speed systems (40G/100G) and GPON
� Lower NF & high Psat and are key parameters for 1300nm SOA
applied in 40G /100G extension system
� Inphenix has designed and manufactured polarization
independent SOA for 40G/100G system
� Future work will focus on the integration of SOA chip, AWG, and
PD arrays in PLC platforms