Inhomogeneous electronic states in superconductors ( Chapelier , Ioffe )
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Transcript of Inhomogeneous electronic states in superconductors ( Chapelier , Ioffe )
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Inhomogeneous electronic states in superconductors (Chapelier, Ioffe)How to disentangle the unavoidable atomic level inhomogeneity of real materials from the electronic inhomogeneity
discussion-session
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Maud VinetWalter EscoffierBenjamin SacépéThomas DubouchetCharlène Tonnoir
Claude ChapelierCEA INAC-SPSMS-LaTEQS, Grenoble
Very Low Temperature STM: a powerful probe for inhomogeneous superconducting states (tutorial)
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Very Low Temperature STM: a powerful probe for inhomogeneous superconducting states (tutorial)
I. STM/STS and usual inhomogeneous superconducting states
II. Highly disordered superconductorsIII. Discussion
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Coarse approach motor
Coarse positioning X-Y table
Sample holderTipPiezo tube10
cm
Scanning Tunneling Microscopy
Michael Schmid, TU Wien
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P.Mallet et al., J. Vac. Sci. Technol. B 14, 1070 (1996) Michael Schmid, TU Wien
NbSe2
Scanning Tunneling Microscopy
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P.Mallet et al., J. Vac. Sci. Technol. B 14, 1070 (1996)
D. Roditchev’s group, http://ln-www.insp.upmc.fr/
Michael Schmid, TU Wien
NbSe2
Scanning Tunneling Microscopy
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Scanning Tunneling Spectroscopy
P.Mallet et al., J. Vac. Sci. Technol. B 14, 1070 (1996)
I
V
dI/dV
VeVfNd
dVdIVG T
S)()()(
NbSe2
D. Roditchev’s group, http://ln-www.insp.upmc.fr/
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Scanning Tunneling Spectroscopy
P.Mallet et al., J. Vac. Sci. Technol. B 14, 1070 (1996)
I
V
dI/dV
VeVfNd
dVdIVG T
S)()()(
NbSe2
D. Roditchev’s group, http://ln-www.insp.upmc.fr/H. Hess et al., Physica B 169, 422 (1991)
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I
V
dI/dV
Scanning Tunneling Spectroscopy
P.Mallet et al., J. Vac. Sci. Technol. B 14, 1070 (1996)
VeVfNd
dVdIVG T
S)()()(
NbSe2
D. Roditchev’s group, http://ln-www.insp.upmc.fr/H. Hess et al., Physica B 169, 422 (1991)
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I
V
dI/dV
Scanning Tunneling Spectroscopy
P.Mallet et al., J. Vac. Sci. Technol. B 14, 1070 (1996)
VeVfNd
dVdIVG T
S)()()(
NbSe2
D. Roditchev’s group, http://ln-www.insp.upmc.fr/I. Guillamon et al., Phys. Rev.B 77, 134405 (2008)
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http://www.oettinger-physics.de/
VortexNbSe2
Sachdev & Zhang, Science
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http://www.oettinger-physics.de/
Vortex
H. Hess et al., Phys. Rev. Lett. . 62, 214 (1989)
NbSe2
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http://www.oettinger-physics.de/
Vortex
H. Hess et al., Phys. Rev. Lett. . 62, 214 (1989)
NbSe2
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http://www.oettinger-physics.de/
VortexNbSe2
H. Hess et al., Physica B 169, 422 (1991)
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http://www.oettinger-physics.de/
Vortex
H. Hess et al., Physica B 169, 422 (1991)
Ch. Renner et al., Phys. Rev. Lett. (1991)
Nb1-x TaxSe2
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http://www.oettinger-physics.de/
Vortex
J.E. Hoffman., Science 295, 466 (2002)
Bi2Sr2CaCu2O8+
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Hybrid nanostructures
N. Moussy et al., Europhys. Lett. 55, 861 (2001)
M. Vinet et al., Phys. Rev. B 63, 165420 (2001)
-4 -2 0 2 4
0,5
1,0
1,5
dI/d
V (n
orm
aliz
ed)
V [mV]
195 nm
75 nm
12 nm
H. Le Sueur et al., Phys. Rev. Lett. 100, 197002 (2008)
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Very Low Temperature STM: a powerful probe for inhomogeneous superconducting states (tutorial)
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Superconductor-Insulator Transition
Granular systems Homogeneously disordered materials
H.M. Jaeger, et al., Phys. Rev. B 34, 14920 (1986)
D.B. Haviland, et al., Phys. Rev. Lett. 62, 2180 (1989)
GalliumBismuth
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Superconductor-Insulator TransitionTiNReactive sputter deposition of TiN films
Homogeneously disordered ?
N. Hadaceket al., Phys. Rev. B 69, 024505 (2004)
100 nm
10 nm
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Superconductor-Insulator TransitionTiN
100 nm
10 nm
T (K)
R (O
hms)
Reactive sputter deposition of TiN films
Granular ?Homogeneously disordered ?
N. Hadaceket al., Phys. Rev. B 69, 024505 (2004)
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Superconductor-Insulator TransitionTiN
T (K)
R (O
hms)
Reactive sputter deposition of TiN films
Granular ?Homogeneously disordered ?
N. Hadaceket al., Phys. Rev. B 69, 024505 (2004)
≈ 80 × 80 × 2 nm
≈ 400
× 4
00 ×
3
nmW. Escoffier et al.,Phys. Rev. Lett. 93, 217005 (2004)
100 nm
10 nm
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Superconductor-Insulator TransitionTiNReactive sputter deposition of TiN films
Homogeneously disordered ?
N. Hadaceket al., Phys. Rev. B 69, 024505 (2004)
≈ 80 × 80 × 2 nm
≈ 400
× 4
00 ×
3
nmW. Escoffier et al.,Phys. Rev. Lett. 93, 217005 (2004)
100 nm
10 nm
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M. Baklanov and A. Satta (IMEC)
Superconductor-Insulator TransitionTiNAtomic layer deposition of 5 nm thick TiN films
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-1,0 -0,5 0,0 0,5 1,00,0
0,5
1,0
1,5
2,0
G(V
), no
rmal
ized
V [mV]
= 260 µeVTeff = 0,25 K
-1,0 -0,5 0,0 0,5 1,00,0
0,5
1,0
1,5
2,0
= 225 µeVTeff = 0,32 K
G(V
), no
rmal
ized
V [mV]
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,00
1
2
3
4
5
6
7
8
R [k
]
T [K]
TiN 1 TiN 2 TiN 3
-1,0 -0,5 0,0 0,5 1,00,0
0,5
1,0
1,5
2,0
= 154 µeVTeff = 0,35 K
G(V
), no
rmal
ized
V [mV]
Increasing disorder
Superconductor-Insulator transition
Sacépé et al., Phys. Rev. Lett. 101, 157006 (2008)
TiN
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Superconductor-Insulator transitionTiN
λ
Sacépé et al., Phys. Rev. Lett. 101, 157006 (2008)
Tc [K] Δ/TcVar.
[%]
4.7 1.8 ---1.3 2.3 121 2.6 20
0.45 4 50
A. Ghosal, M. Randeria, N. Trivedi, Phys. Rev. Lett. 81, 3940, (1998)Phys. Rev. B 65, 014501 (2001)
M. Ma and P.A. Lee, Phys. Rev. B 32, 5658, (1985)A. Kapitulnik, G. Kotliar, Phys. Rev. Lett. 54, 473, (1985)M. Feigel’man et al., Phys. Rev. Lett. 98, 027001, (2007)M. Feigel’man et al., Ann. Phys. 325, 1390 (2010)M. A. Skvortsov et al., Phys. Rev. Lett. 95,057002, (2005)
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Pseudogap
B. Sacépé, et al., Nature Communications 1:140 (2010)
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0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,00
1
2
3
4
5
6
7
8
R [k
]
T [K]
TiN 1 TiN 2 TiN 3
Superconducting fluctuations correction to the DOSShort-lived Cooper pairs above Tc
A. Varlamov and V. Dorin, Sov. Phys. JETP 57, 1089, (1983)
Pseudogap
B. Sacépé, et al., Nature Communications 1:140 (2010)
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0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,00
1
2
3
4
5
6
7
8
R [k
]
T [K]
TiN 1 TiN 2 TiN 3
Superconducting fluctuations correction to the DOSShort-lived Cooper pairs above Tc
A. Varlamov and V. Dorin, Sov. Phys. JETP 57, 1089, (1983)
Pseudogap
B. Sacépé, et al., Nature Communications 1:140 (2010)
R□
[kΩ]Tc (R□) [K]
Tc (DOS)
[K]
3.5 1.31.3 1.271.27
4.3 1.01.0 0.980.98
7.4 0.450.45 0.450.45
An extreme sensitivity to Tc
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Very Low Temperature STM: a powerful probe for inhomogeneous superconducting states (tutorial)
How to disentangle the unavoidable atomic level inhomogeneity of real materials from the electronic inhomogeneity ?
Which inhomogeneities ?
Down to which scale a real material must be considered granular or not ?
What is a homogeneously disordered material ?
How can we relate global macroscopic behavior (transport) and local signatures (STS) ?
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Dilution fridge setup
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Anomalous proximity effectSuperconducting granular TiN films
-1,5 -1,0 -0,5 0,0 0,5 1,0 1,50,0
0,5
1,0
1,5
2,0
2,5
3,0 xexp
= 0 nm x
cal = 0 nm
xexp
= 12 nm x
cal = 9 nm
xexp
= 20 nm x
cal = 21 nm
xexp
= 32 nm x
cal = 31 nmdI
/dV
E (meV)
dS,N
W. Escoffier et al., Phys. Rev. Lett. (2004)
≈ 80 × 80 × 2 nm
≈ 400
× 4
00 ×
3
nm
Theory : Zhang & Xiong,
Physica C (2006)
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Anomalous proximity effectSuperconducting granular TiN films
B. Sacépé (unpublished)
1500 nm x 1500 nm
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Superconducting fluctuations quantum corrections
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Tc [K]
1.31
0.45
One parameter fit : Tc
Superconducting fluctuations quantum corrections