INFOVION’S MAIN PRODUCTS · INFOVION’S MAIN PRODUCTS CONTENTS Cluster Sputter System Multi...

INFOVIONS

MAIN PRODUCTS

CONTENTS

Cluster Sputter System

Multi Cathode Sputter System

Combinatorial IBSD System

Combinatorial Sputter System

IBSD System

Roll Coating Sputter System

RTA System

MOCVD System

Ion Source

Ion Energy Analyzer

Effusion Cell

Neutral Beam Etcher


INFOVIONs Cluster Sputter System Provides The Best Available Valuefor Wide Ranging Research and Production Applications


Operation Module : Process and Transfer Modules Operation Module : Process and Transfer Modules Operation Module : Process and Transfer Modules Operation Module : Process and Transfer Modules Sputter Source : 6 Magnetron Sputter SourcesSputter Source : 6 Magnetron Sputter SourcesSputter Source : 6 Magnetron Sputter SourcesSputter Source : 6 Magnetron Sputter Sources Power : RF & DC Power SelectablePower : RF & DC Power SelectablePower : RF & DC Power SelectablePower : RF & DC Power Selectable Gas Control : Ar, O2 , N2Gas Control : Ar, O2 , N2Gas Control : Ar, O2 , N2Gas Control : Ar, O2 , N2 Heating Module : Up to 600Heating Module : Up to 600Heating Module : Up to 600Heating Module : Up to 600CCCC Fully Automated Operating SystemFully Automated Operating SystemFully Automated Operating SystemFully Automated Operating System

Cluster Sputter Software Program-1

Program Features

Display of Cluster sputter system & process condition

Fully Automated Control System

Safety Interlock System for Instrument & users

User authorization Sign up Mode

Cluster Sputter Software Program-2

Display of PM#1,2,3 image & full conditionDisplay of PM#1,2,3 image & full conditionDisplay of PM#1,2,3 image & full conditionDisplay of PM#1,2,3 image & full condition Manual Control ModeManual Control ModeManual Control ModeManual Control Mode Display of Pump, Valve Condition & Display of Pump, Valve Condition & Display of Pump, Valve Condition & Display of Pump, Valve Condition &

Deposition Time Deposition Time Deposition Time Deposition Time

Simultaneous Sputter Deposition in separate 4-Chamber

Possible to Change RF & DC Power easily by using RF/DC

Change-over switch

Up to Thirteen RF/DC Magnetron Sputter Sources

Excellent Film Uniformity on a 6 wafer

Fully Automated Operating System

Special Options are available for our customers

Key Features


Specifications

Base System FeaturesBase System FeaturesBase System FeaturesBase System Features SpecificationsSpecificationsSpecificationsSpecifications

Deposition ModeDeposition ModeDeposition ModeDeposition Mode Co-Sputter Deposition Mode

Sputter SourceSputter SourceSputter SourceSputter Source Thirteen 6" Magnetron Sputter Source (UHV & HV Type)

Wafer UniformityWafer UniformityWafer UniformityWafer Uniformity 5% on 6" diameter wafer

Power SuppliesPower SuppliesPower SuppliesPower Supplies Seven 1000W RF Power Supply & Five 2000W DC Power Supply

Substrate Heating CapacitySubstrate Heating CapacitySubstrate Heating CapacitySubstrate Heating Capacity Up to 600 (Uniformity 5)

Substrate Z-MotionSubstrate Z-MotionSubstrate Z-MotionSubstrate Z-Motion 0~100mm

Substrate RPMSubstrate RPMSubstrate RPMSubstrate RPM Up to 100RPM

Cassette Chamber CapacityCassette Chamber CapacityCassette Chamber CapacityCassette Chamber Capacity Up to sixteen wafers

Gas ControlGas ControlGas ControlGas Control Ar, O2, N2

Ultimate pressureUltimate pressureUltimate pressureUltimate pressure PM1,2,3 1 x 10-7 Torr

PM4 5 x 10-8

Torr

Operating SystemOperating SystemOperating SystemOperating System HMI Software / PLC Based Process Control

Fully Automated System

Safety Interlock System

Multi Cathode Sputter System

Semiconductor Devices

Conductive Metal / Resistive Metal / Insulating Films

Transparent Electrical Conductors (ITO)

Lens Coatings (Reflective / Anti-reflective / Hard / Color)

Thin Film Sensors

Magnetic Storage Media and Heads (HD, GMR, TMR)

Photovoltaic Thin Films (Solar Cells)

Applications


Deposition ModeDeposition ModeDeposition ModeDeposition Mode Co-Sputter Deposition Mode

Sputter SourceSputter SourceSputter SourceSputter Source Three 6" Magnetron Sputter Source (HV Type)


Power SuppliesPower SuppliesPower SuppliesPower Supplies Three 1000W RF Power Supply




Load Lock Chamber Load Lock Chamber Load Lock Chamber Load Lock Chamber Fully Automated Wafer Transfer System


Ultimate pressureUltimate pressureUltimate pressureUltimate pressure 1 x 10-6 Torr




Specifications

Combinatorial IBD System-1

Combinatorial Synthesis Method

Sequential Ion Beam Sputter System

Co-sputtering Ion Beam Deposition System

Moving Mask System & Substrate Rotation


Key Features

Discovery of New Ternary & Binary Material

Using Combinatorial Synthesis

High-throughput Characterization



Deposition Mode : Step, Wafer layer & CoDeposition Mode : Step, Wafer layer & CoDeposition Mode : Step, Wafer layer & CoDeposition Mode : Step, Wafer layer & Co----Sputtering ModesSputtering ModesSputtering ModesSputtering Modes Operation Module : Process and Transfer Modules Operation Module : Process and Transfer Modules Operation Module : Process and Transfer Modules Operation Module : Process and Transfer Modules Sputter Source : RF Ion Source with 6cm beam gridSputter Source : RF Ion Source with 6cm beam gridSputter Source : RF Ion Source with 6cm beam gridSputter Source : RF Ion Source with 6cm beam grid RF Generator : 1000WRF Generator : 1000WRF Generator : 1000WRF Generator : 1000W Beam Energy : 100~1500 eVBeam Energy : 100~1500 eVBeam Energy : 100~1500 eVBeam Energy : 100~1500 eV Gas Control : Ar, O2 , N2Gas Control : Ar, O2 , N2Gas Control : Ar, O2 , N2Gas Control : Ar, O2 , N2 Heating Module : Up to 600Heating Module : Up to 600Heating Module : Up to 600Heating Module : Up to 600CCCC User friendly LoadUser friendly LoadUser friendly LoadUser friendly Load----Lock SystemLock SystemLock SystemLock System Fully Automated Operating SystemFully Automated Operating SystemFully Automated Operating SystemFully Automated Operating System


A

B

100

50

0

100500C100

50

0

Ternary Materials Phase DiagramTernary Materials Phase DiagramTernary Materials Phase DiagramTernary Materials Phase Diagram

Combinatorial IBSD Process Features

To prepare Binary & Ternary phase alloying at a high temp. at one time

Rapid Investigation to find ideal composition of numerous compounds

Excellent film uniformity on the 6 wafer ( > 98% )

Possible to Change deposition modes

(Combinatorial & Co-sputtering)

Atomically controlled layer-by-layer thin films

Ternary Materials Phase DiagramTernary Materials Phase DiagramTernary Materials Phase DiagramTernary Materials Phase Diagram


Deposition ModeDeposition ModeDeposition ModeDeposition Mode Step, Wafer layer and Co-sputtering Modes

Sputter SourceSputter SourceSputter SourceSputter Source RF Ion Beam Sputter Source


RF Power SuppliesRF Power SuppliesRF Power SuppliesRF Power Supplies 1000W RF Power Supply

Ion Beam Sputter DC PowerIon Beam Sputter DC PowerIon Beam Sputter DC PowerIon Beam Sputter DC Power Beam Voltage: 1500V/1000mA, Accel Voltage: 1500V/300mA






Ultimate pressureUltimate pressureUltimate pressureUltimate pressure 1 x 10-6

Torr




Specifications

Combinatorial Sputter System

Specifications

Key Features

Discovery of New Ternary & Binary Material

Using Combinatorial Synthesis

High-throughput Characterization

Specifications


Deposition ModeDeposition ModeDeposition ModeDeposition Mode Step and Wafer layer Modes

Sputter SourceSputter SourceSputter SourceSputter Source 3"-6" Magnetron Sputter Sources












Ion Beam Sputter Deposition System

Optimal Ion Beam Sputter Deposition

Motorized Three Target Changing System

Dynamic Sequential Layer by Layer Deposition Method

Substrate Rotation, Z-Motion & Heating

Enhanced HMI Software

Excellent film uniformity on a 6 wafer

Corresponding to 300mm Wafer


Various User Defined Options

System Features

Ion Beam Deposition Advantages

Pinhole-free films with enhanced adhesion due to higher ion energy

Reduction of film stress and film densification are greatly enhanced

by using ion assist gun

Higher film purity thanks to Low operation pressure (low 10-4 Torr)

Independent control of ion energy and flux that provides control of

film microstructure, stoichiometry and stress

Stable deposition rates and Excellent film uniformity

Specifications


Specifications


Deposition ModeDeposition ModeDeposition ModeDeposition Mode Sequential Layer by Layer Deposition Mode

Sputter SourceSputter SourceSputter SourceSputter Source RF Ion Beam Sputter Source

Assist SourceAssist SourceAssist SourceAssist Source RF Ion Beam Assist Source



Ion Beam Sputter DC PowerIon Beam Sputter DC PowerIon Beam Sputter DC PowerIon Beam Sputter DC Power Beam Voltage: 1500V/1000mA, Accel Voltage: 1500V/300mA

Ion Beam Assist DC PowerIon Beam Assist DC PowerIon Beam Assist DC PowerIon Beam Assist DC Power Beam Voltage: 1000V/1000mA, Accel Voltage: 1000V/1000mA










Advantages

Atomic layer growth due to high surface mobility

Atomically smooth surface due to high surface mobility

Excellent film uniformity

Higher film purity thanks to Low operation pressure (low 10-4 Torr)

Acquire kinetic energy and

ZnO target

Ar+


Ion Beam

Gun

energy and still maintain directionality and kinetic energy

a-ZnO

Atomic Layer Growth !!!Atomic Layer Growth !!!

Plastic

Roughness analysis for Cu thin film(20nm thick on SiO2, Room Temp.)

Rms RoughRms RoughRms RoughRms Rough Ave RoughAve RoughAve RoughAve Rough

69.2 55.2

Rms RoughRms RoughRms RoughRms Rough Ave RoughAve RoughAve RoughAve Rough

9.21 7.26

By Ion Beam Sputter By Sputter

Roll Coating Sputter System-1

System Features

Well proven rectangular magnetron sputter source

Tension self stabilizing system

Automated Door Access System

High heating capacity to deposit the desired atoms

Excellent film uniformity


Various User Defined Options

Web winding moduleWeb winding moduleWeb winding moduleWeb winding module---- up to 200 mm wideup to 200 mm wideup to 200 mm wideup to 200 mm wide

Sputter Source & Heater Power On Sputter Source & Heater Power On Rectangular Magnetron Sputter SourcesRectangular Magnetron Sputter Sources


Sputter Source & Heater Power On Sputter Source & Heater Power On Rectangular Magnetron Sputter SourcesRectangular Magnetron Sputter Sources


System TypeSystem TypeSystem TypeSystem Type Roll film Deposition System

Sputter SourceSputter SourceSputter SourceSputter Source Three Rectangular Magnetron Sputter Sources

Sample TypeSample TypeSample TypeSample Type Ni-W Metal roll film

RF Power SuppliesRF Power SuppliesRF Power SuppliesRF Power Supplies 1000W

Substrate Heating CapacitySubstrate Heating CapacitySubstrate Heating CapacitySubstrate Heating Capacity 25 ~ 700 (Uniformity 5)






Specifications


Process Control System with Touch ScreenProcess Control System with Touch ScreenProcess Control System with Touch ScreenProcess Control System with Touch ScreenProcess Control System with Touch ScreenProcess Control System with Touch ScreenProcess Control System with Touch ScreenProcess Control System with Touch Screen

Web winding moduleWeb winding moduleWeb winding moduleWeb winding module---- up to 200 mm wideup to 200 mm wideup to 200 mm wideup to 200 mm wide

System Features

Deposition Process : Multi turn system

Deposition Chamber : Main Chamber & Silver Chamber

System Control : PLC program in PC control

with Touch Screen

Gas Control : Ar, O2, N2

Tension Self Stabilizer System

Closed-loop temperature control with Pyrometer or Thermocouple

Fast Digital PID temperature control

Tubular Infrared Halogen Lamps allow very fast ramp rates

Multi-zone control of Infrared Halogen Lamps

Motorized Horizontal Motion Door with Quartz Tray

Cold Wall Chamber Technology provides high process reproducibility

System Features

Rapid Thermal Annealing System

Full PC control for editing recipes and process data logging

RTA (Rapid Thermal Annealing)

RTO (Rapid Thermal Oxidation)

Ion Implant Activation

Contact alloying

Oxidation and Nitridation

Compound Semiconductor Annealing

Crystallization and Densification

Applications

Performance Characteristics

Temperature Range: 250 to 1200

Ramp Up Rate : 100/sec

Ramp Down Rate : 100 /sec (at high temp.)

Steady State Temperature Stability: 2

Steady State Time: 1~9999 sec ( 1~600 sec recommended)

Wafer Size: Up to 6 inch

Gas Mixing Capability with Mass Flow Controllers

RTA System


Maximum Substrate SizeMaximum Substrate SizeMaximum Substrate SizeMaximum Substrate Size Up to 6"

Process ChamberProcess ChamberProcess ChamberProcess Chamber Water-cooled Aluminum with quartz window

Heating SourceHeating SourceHeating SourceHeating Source Multi-zone halogen lamp

Fan lamp air cooling with heat exchanger

High temperature version up to 1200

Temperature ControlTemperature ControlTemperature ControlTemperature Control K-type Thermocouple (

RTA Software Program

Program Features

User-Friendly Automatic Control System

Semi Automatic Control System

Recipe System

Data Save System

Data Analysis System


RTA Software Program

Auto Control Semi Auto Control

Graph Data Sheet

Closed-loop temperature control with pyrometer or thermocouple

Tubular Infrared Halogen Lamps allow very fast heating ramp rates

Convective cooling process by using LN2 showering onto sample surface

Rapid Heat/Cool exchange following thermal process program

to control sample property

Fast and accurate vertical sample position control by using servo motor

System Features

Rapid Cooling/Heating System

RTA (Rapid Thermal Annealing)

RTO (Rapid Thermal Oxidation)

Ion Implant Activation

Contact alloying

Oxidation and Nitridation

Compound Semiconductor Annealing

Crystallization and Densification

Applications

Full PC control for editing recipes and process data logging

Safety interlock system

Performance Characteristics

Temperature Range: 250 to 800

Ramp Up Rate : 100/sec

Ramp Down Rate : 100 /sec

Steady State Temperature Stability: 2

Steady State Time: 1~9999 sec ( 1~600 sec recommended)

Sample Size: Up to 6 inch long metal strip

Gas Mixing Capability with Mass Flow Controllers

Rapid Cooling Processing System


Maximum Substrate SizeMaximum Substrate SizeMaximum Substrate SizeMaximum Substrate Size 200X150X(0.5~10)mm

Process ChamberProcess ChamberProcess ChamberProcess Chamber Water-cooled Aluminum Chamber & Quartz Chamber

Heating SourceHeating SourceHeating SourceHeating Source Multi-zone halogen lamp

Fan lamp air cooling with heat exchanger

High temperature version up to 800

Cooling SourceCooling SourceCooling SourceCooling Source Nitrogen, Argon, Liquide Nitrogen

Low temperature version down to 300

Temperature ControlTemperature ControlTemperature ControlTemperature Control K-type Thermocouple (

MOCVD System

Patented unique design for gas stream

High heating capacity to deposit the desired atoms on the wafer

Possible to use various compositions of the gases

Highly uniform thickness

Excellent repeatability

Low maintenance and high throughput

System Features

MOCVD Unique Showerhead StructureMOCVD Unique Showerhead Structure

MOCVD System

Specifications

MOCVD Unique Showerhead StructureMOCVD Unique Showerhead Structure


Source TypeSource TypeSource TypeSource Type Showerhead

Input Gas StreamInput Gas StreamInput Gas StreamInput Gas Stream Up to 3 layers

Substrate holderSubstrate holderSubstrate holderSubstrate holder 2" size/3 stage (option)


Substrate MotionSubstrate MotionSubstrate MotionSubstrate Motion Z-motion, Revolution, Rotation (Option)

Using gasUsing gasUsing gasUsing gas N2, O2, H2, NH3, SiH24

Mo SourceMo SourceMo SourceMo Source 2 channels (Ga, Mn)


Operating SystemOperating SystemOperating SystemOperating System PLC program control with Touch screen



PECVD System

Dual Mixed Feature of PECVD and RTCVD

Halogen Heating (1200) and RF Power Input

Dry & Turbo, Rotary pumping

Gas : Ar, N2, H2, NH2, SiH4, B2H6, PH3, TCS Liquid Direct Injection, MO source

Deposit the desired films (Crystalline & Amorphous) on the wafer(4, 6)

PC Automation & LCD (17) displayPC Automation & LCD (17) displayPC Automation & LCD (17) displayPC Automation & LCD (17) display

System Features

Evaporation System

8 inch Lift Off Dome8 inch Lift Off Dome

Used for extensive material coating process. Metal, oxide, nitride and multi layers.

Lift-off dome and planetary dome make highly uniform thickness, excellent step coverage and repeatability.

Fully automated computer controlled operating system with safety interlocks. Possible to select thermal evaporation or

e-beam evaporation.

System Features

8 inch Planetary Dome8 inch Planetary Dome

Neutral Beam Etcher


Etching SourceEtching SourceEtching SourceEtching Source Neutrally Charged Species

Temperature control Temperature control Temperature control Temperature control ESC Cooling

Wafer size Wafer size Wafer size Wafer size 6 inch

Substrate MotionSubstrate MotionSubstrate MotionSubstrate Motion Z-motion

Using gasUsing gasUsing gasUsing gas Ar, O2, C2F6

Plasma Analysis Plasma Analysis Plasma Analysis Plasma Analysis B-Dot Probe, Ion Energy Analyzer




INFOVIONs Ion Milling System utilizes a multi-platen, planetary (double rotation)stage assembly and a highly uniformity etch across each sample.

Ion Beam Milling System

System FeaturesSystem FeaturesSystem FeaturesSystem Features SpecificationsSpecificationsSpecificationsSpecifications

Main chamberMain chamberMain chamberMain chamber Ultimate pressure: Turbo pumping High 10-7 Torr

Ion gunIon gunIon gunIon gun -Beam aperture: Grid dia. 380 mm, Convex type

- Ion beam energy: 1.5 KeV

Specifications

Largest commercial broad-beam ion source

Dia32 double walled, Water cooled Chamber

Beam Uniformity : 5% over 30cm diameter

Beam Power : 300-1200eV, 5000mA

Molybdenum, Self-aligning ion optics

Double rotation planetary type Sample Stage

Excellent repeatability

Low maintenance and high throughput

System Features

Substrate holderSubstrate holderSubstrate holderSubstrate holder -Substrate Size : 3inch 5EA At Once installation possibility

- 3inch Full Wafer & scrap Sample All use Substrate Holder

- Rotation type: Double rotation planetary type, various etching angle

- Motorized angle setting

CIGS Solar Cell Cluster System

System Features

INFOVIONs CIGS Solar Cell System Provides the Best Available Value

for Wide Ranging Research and Production Applications

System Features

CIGS multi deposition system

Single soda-lime glass (100x100/0.7~3t)

Vacuum cluster system

Separate entry/exit module

PM 1 : Isolated CIGS evaporation module

PM 2 : Ni, Al evaporation module

PM 4 : AZO, ZnO sputter process module

PM 5 : CIGS sputter process module

INFOVIONs CIGS Solar Cell System Provides the Best Available Value

for Wide Ranging Research and Production Applications

Fully automation with data logging capabilities Single soda-lime glass (100x100/0.7~3t) Vacuum cluster system Separate entry/exit module PM 1 : CIGS sputter process module- RF & pulsed DC sputter- 4 Magnetron sputter gun / 3set- RF power: 600W / 1set

System Features

CIGS Solar Cell Cluster System

- RF power: 600W / 1set- Pulse DC power: 800V 7.2A 150kHz / 2set- Substrate heating (max 650) PM 2 : AZO, ZnO sputter process module- 4 Magnetron sputter gun / 3set- RF power: 600W / 1set- Pulse DC power: 800V 7.2A 150kHz / 2set- Substrate heating (max 650) PM 3 : Ni, Al evaporation module- E-beam source: 25cc / 4 pocket / 1set- E-beam source shutter with air actuator- Substrate heating (max 650) PM 4 : Isolated CIGS evaporation module- Effusion cell evaporator- Isolated operation system (exclusive use load-lock)- 10cc Cu, In, Ga, Na cell source with shutter- 150cc Se, S cell source with shutter- Substrate heating (max 650)- EIES and thickness controller

---- InInInIn----linelinelineline 70"70"70"70" PDPPDPPDPPDP GlassGlassGlassGlass ITO( IndiumITO( IndiumITO( IndiumITO( Indium----TinTinTinTin----Oxide) , Oxide) , Oxide) , Oxide) , , MgO , MgO , MgO , MgO

- ChamberChamberChamberChamber : 5000mm(l) x 1410mm(h) x 300mm(w): 5000mm(l) x 1410mm(h) x 300mm(w): 5000mm(l) x 1410mm(h) x 300mm(w): 5000mm(l) x 1410mm(h) x 300mm(w)

- Sputter Sputter Sputter Sputter : 4 Target Source : 4 Target Source : 4 Target Source : 4 Target Source , , , , , , , , : 95% : 95% : 95% : 95% , Tack Time : 5min/ Batch, Tack Time : 5min/ Batch, Tack Time : 5min/ Batch, Tack Time : 5min/ Batch

---- 70"70"70"70" PDPPDPPDPPDP ITO ITO ITO ITO , , , , : 400/ min, : 400/ min, : 400/ min, : 400/ min, : 85%: 85%: 85%: 85%, , , , : : : : 7%7%7%7%

In Line PDP System

70"70"70"70" Glass Sputtering SystemGlass Sputtering SystemGlass Sputtering SystemGlass Sputtering System

Arc Sputter System

System Features

Arc Ion Sputtering System

Oil Diffusion, Rotary Booster & Holding Pump

Gas: Ar, N2, H2, C2H2, GN2 (Vent)

PC, Automation & LCD (19) Display

Plasma Gun 2300 x 80mm (Linear Anode Ion Source)

Dia 482780h x 1220 Water Cooled chamber

Functional Coating System (Temp Max 450)

Rotation, Revolution, Sample Stage Rotation, Revolution, Sample Stage Rotation, Revolution, Sample Stage Rotation, Revolution, Sample Stage

Streed Arc Gun 80 35eaStreed Arc Gun 80 35eaStreed Arc Gun 80 35eaStreed Arc Gun 80 35ea

Low Maintenance and High ThroughputLow Maintenance and High ThroughputLow Maintenance and High ThroughputLow Maintenance and High Throughput

Sample 2200mm 220Sample 2200mm 220Sample 2200mm 220Sample 2200mm 220

Rotation Post 8eaRotation Post 8eaRotation Post 8eaRotation Post 8ea

Sample BiasSample BiasSample BiasSample Bias

Electric Magnet for UniformityElectric Magnet for UniformityElectric Magnet for UniformityElectric Magnet for Uniformity

INFOVIONS

Core Source & System Components


Ion Source Type Ion Source Type Ion Source Type Ion Source Type RF Ion Source

Beam Aperture Beam Aperture Beam Aperture Beam Aperture 60

Beam Energy Beam Energy Beam Energy Beam Energy 100~1500eV

Using GasUsing GasUsing GasUsing Gas Reactive & Inert gas

Cooling Type Cooling Type Cooling Type Cooling Type Water cooling

Specifications

RF Ion Source

INFOINFO--RFRF--60G60G

Features

Contamination-free Ion Source

High Flux with Wide Range Energy

Reactive & Inert gas Operation

Easy Maintenance

Good Compatibility

Plasma Chamber Plasma Chamber Plasma Chamber Plasma Chamber Quartz

Plasma source Plasma source Plasma source Plasma source ICP

Grid Configuration Grid Configuration Grid Configuration Grid Configuration Mo multi grids

Beam Neutralization Beam Neutralization Beam Neutralization Beam Neutralization Plasma Bridge Neutralizer, RF Neutralizer on request

Mounting Configuration Mounting Configuration Mounting Configuration Mounting Configuration Flange DN-160CF, DN-160ISO on request


Ion Source Type Ion Source Type Ion Source Type Ion Source Type Hollow Cathode Ion Source

Beam Aperture Beam Aperture Beam Aperture Beam Aperture 55




Plasma Chamber Plasma Chamber Plasma Chamber Plasma Chamber Tantalum

Specifications

Hollow Cathode Ion Source

INFOINFO--HCHC--55/55G55/55G

Features

Compatible with Reactive Conditions

Wide Range Operation, easy-to-start

Continuous Working

Dual Chamber for Plasma Generation

Various Application

Plasma Chamber Plasma Chamber Plasma Chamber Plasma Chamber Tantalum

Plasma source Plasma source Plasma source Plasma source



Mounting Configuration Mounting Configuration Mounting Configuration Mounting Configuration Flange DN-160CF, DN-160ISO on request

Specifications



Beam Aperture Beam Aperture Beam Aperture Beam Aperture 60X450mm





Linear Ion Source-1

INFOINFO--RFRF--60X450G60X450G

Features

Applicable to 2th Generation Glass Substrates

Uniform Processing for Ultra Large Substrates



Low & Easy Maintenance





Mounting Configuration Mounting Configuration Mounting Configuration Mounting Configuration Rectangular O-ring type flange

Specifications



Beam Aperture Beam Aperture Beam Aperture Beam Aperture 60X2010mm





Linear Ion Source-2

INFOINFO--RFRF--60X2010G60X2010G

Features

Applicable to 7th Generation Glass Substrates

Uniform Processing for Ultra Large Substrates



Low & Easy Maintenance




Mounting Configuration Mounting Configuration Mounting Configuration Mounting Configuration Rectangular O-ring type flange

Gate Valve for PDP

Round Gate Valve

Features

Analysis of electron and ion energy distribution functions

Minimum perturbation of ion flight path and constant ion

transmission at all energies

Using the magnet to reduce secondary electron emission

Using three grids to retard scattered electrons and prevent

Ion Energy Analyzer-1

contamination

Possible to use as a Faraday Cup for charged particle flux

measurement

Specifications


Input PowerInput PowerInput PowerInput Power Max. 1000 V

Aperture SizeAperture SizeAperture SizeAperture Size 20mm dia.

Shield SizeShield SizeShield SizeShield Size 58mm dia.

Operating Temp.Operating Temp.Operating Temp.Operating Temp. Max. 300

Pressure RangePressure RangePressure RangePressure Range 5 x 10-3 ~ 5 x 10-8 Torr

Features

Versatile transfer lens system

Compact design

Magnetic shielded construction

True multi-technique capabilities

Windows based Advantage data system

Ion Energy Analyzer-2

Windows based Advantage data system

Specifications


1000 V/1A

-500 V/1A

Plasma chamberPlasma chamberPlasma chamberPlasma chamber Quartz

Grid configurationGrid configurationGrid configurationGrid configuration Mo Grid

Operating Temp.Operating Temp.Operating Temp.Operating Temp. Max. 300

Pressure RangePressure RangePressure RangePressure Range 5 x 10-3 ~ 5 x 10-8 Torr

Input PowerInput PowerInput PowerInput Power

MOMBE Effusion Cell

Features

Versatile and compact design to use metal organic source

Operating temperature range is 30C ~ 500C

Provides easy access to injector for cleaning

Easy to install due to CF flange type mounting

Quick connector type power and thermocouple terminals

A variety of different crucible materials are available

Specifications


Total height Total height Total height Total height 440mm

Injection part height Injection part height Injection part height Injection part height 88.5mm

Injection part diameter Injection part diameter Injection part diameter Injection part diameter 48mm

Nozzle SizeNozzle SizeNozzle SizeNozzle Size 0.5~3mm

Temperature range Temperature range Temperature range Temperature range 30C ~ 500C

ThermocoupleThermocoupleThermocoupleThermocouple K-Type

A variety of different crucible materials are available

Application paper:

- M.S. Yun, M.S. Kim, Y.D. Go, J.H. Hong, I.G. Yun,

Microelectronic Engineering, 77 (2005), P.54

- M.S. Kim, J.H. Hong, M.C. Jeong, J.M. Myoung,

Applied Surface Science, 227 (2004), P.398

OLED Effusion Cell

Features

Versatile and compact design for use of low temperature volatile

organics

Operate at low temperatures through superior thermal control in

30C ~ 700C range

Provides easy access to crucible for cleaning

Easy to installation

Specifications


Total height Total height Total height Total height 70mm

Injection part diameter Injection part diameter Injection part diameter Injection part diameter 50mm

Standard crucible Standard crucible Standard crucible Standard crucible 4cc high purity alumina

Temperature range Temperature range Temperature range Temperature range 30C ~ 700C

Charge capacity Charge capacity Charge capacity Charge capacity 3cc

ThermocoupleThermocoupleThermocoupleThermocouple K-Type

Easy to installation

Base mounted power and thermocouple terminals

Distribute coatings evenly by directing vapor

Ideal for use in tandem for co-deposition of dye-doped organic

emissive films

Various material of crucibles

Specifications


Source TypeSource TypeSource TypeSource Type Showerhead

Input Gas StreamInput Gas StreamInput Gas StreamInput Gas Stream Up to 3 layers

Substrate holderSubstrate holderSubstrate holderSubstrate holder 2" size/3 stage (option)


Substrate MotionSubstrate MotionSubstrate MotionSubstrate Motion Z-motion, Revolution, Rotation (Option)


MOCVD Shower Head

Features

Plurality of gases in showerhead are not mixed before injection

Uniform gas distribution

Anti-oxidant and stable showerhead structure in high temperature

Unique honeycomb structure

Each component of showerhead is brazed in vacuum condition


Mo SourceMo SourceMo SourceMo Source 2 channels (Ga, Mn)





Specifications


MaterialMaterialMaterialMaterial Flange and tube: SUS 304

Actuator housing and stop clamps:

Anodized aluminum

Magnet TypeMagnet TypeMagnet TypeMagnet Type NdFeB or Alnico(for high temp.)

Pressure range Pressure range Pressure range Pressure range ATM to 1 x 10-11

Torr (HV/UHV)

Operating TemperatureOperating TemperatureOperating TemperatureOperating Temperature -20 to 250

Magnet Transfer Rod

Features

Continuous rotary motion when unguided

Long stroke (up to 2000mm)

Manual or Motorized linear travel actuator

Greatly enhanced durability and stability by using

space sustaining transport unit

Low vibration and deflection of sample holder

Operating TemperatureOperating TemperatureOperating TemperatureOperating Temperature -20 to 250

Decoupling Axial load Decoupling Axial load Decoupling Axial load Decoupling Axial load 0.8 kg

TorqueTorqueTorqueTorque 5.2 kg.m

Lateral loadLateral loadLateral loadLateral load 12 kg Max.

DimensionDimensionDimensionDimension 78 x (670mm or longer)*Modifications are available

Mask ChangeOLED Glass Chucking Module

OLED Glass Chucking Module

Overview

Main Plate

Cylinder for Glass Stretching

Glass (730x920)

Stretching Bracket

Mask Holder

Mask

Cylinder for Mask Chucking

Cylinder for Glass Chucking

Glass Holder

In-line IBD System

Ion Source Moving

Ion Beam Target Ion Beam Target

Ion Beam1 Ion Beam 2(Deposition) (Cleaning)

Target

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