Infineon Technologies AG · Infineon Technologies AG Keywords: IK#20N60H3, Rev. 1.1, Vorläufiges...

1

IKW20N60H3High speed switching series third generation

Rev. 1.1 2010-02-01

High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fastrecovery anti-parallel diode

Features:TRENCHSTOPTM technology offering • very low VCEsat• low EMI• Very soft, fast recovery anti-parallel diode • maximum junction temperature 175°C • qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant• complete product spectrum and PSpice Models:http://www.infineon.com/igbt/

Applications:• uninterruptible power supplies• welding converters• converters with high switching frequency

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C

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TypeTypeTypeType VVVV†Š†Š†Š†Š IIII†††† VVVV†ŠÙÈÚ, †ŠÙÈÚ, †ŠÙÈÚ, †ŠÙÈÚ, TTTTÝÎ=25°CÝÎ=25°CÝÎ=25°CÝÎ=25°C TTTTÝÎÑÈàÝÎÑÈàÝÎÑÈàÝÎÑÈà MarkingMarkingMarkingMarking PackagePackagePackagePackage

IKW20N60H3 600V 20A 1.95V 175°C K20H603 PG-TO247-3

Maximum ratingsParameter Symbol Value UnitCollector-emitter voltage V†Š 600 V

DC collector current, limited by TÝÎÑÈàT† = 25°CT† = 100°C

I† 40.020.0

A

Pulsed collector current, tÔ limited by TÝÎÑÈà I†ÔÛÐÙ 80.0 A

Turn off safe operating area V†Š ù 600V, TÝÎ ù 175°C - 80.0 A

Diode forward current, limited by TÝÎÑÈàT† = 25°CT† = 100°C

IŒ 20.010.0

A

Diode pulsed current, tÔ limited by TÝÎÑÈà IŒÔÛÐÙ 80.0 A

Gate-emitter voltage V•Š ±20 V

Short circuit withstand timeV•Š = 15.0V, V†† ù 400V, TÝÎ ù 150°CAllowed number of short circuits < 1000Time between short circuits: ú 1.0s

t»† 5 µs

Power dissipation T† = 25°CPower dissipation T† = 100°C PÚÓÚ 170.0

85.0 W

Operating junction temperature TÝÎ -40...+175 °C

Storage temperature TÙÚÃ -55...+150 °C

Soldering temperature,wavesoldering 1.6 mm (0.063 in.) from case for 10s 260 °C

Mounting torque, M3 screwMaximum of mounting processes: 3 M 0.6 Nm

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Rev. 1.1 2010-02-01

Thermal ResistanceParameter Symbol Conditions Max. Value UnitCharacteristicIGBT thermal resistance,junction - case RÚÌñÎ-Êò 0.88 K/W

Diode thermal resistance,junction - case RÚÌñÎ-Êò 1.89 K/W

Thermal resistancejunction - ambient RÚÌñÎ-Èò 40 K/W

Electrical Characteristic, at Electrical Characteristic, at Electrical Characteristic, at Electrical Characteristic, at TTTTÝÎ = 25°C, unless otherwise specifiedÝÎ = 25°C, unless otherwise specifiedÝÎ = 25°C, unless otherwise specifiedÝÎ = 25°C, unless otherwise specified

Valuemin. typ. max.

Parameter Symbol Conditions Unit

Static CharacteristicCollector-emitter breakdown voltage Vñ…çò†Š» V•Š = 0V, I† = 2.00mA 600 - - V

Collector-emitter saturation voltage V†ŠÙÈÚ

V•Š = 15.0V, I† = 20.0ATÝÎ = 25°CTÝÎ = 125°CTÝÎ = 175°C

---

1.952.302.50

2.40--

V

Diode forward voltage VŒ

V•Š = 0V, IŒ = 10.0ATÝÎ = 25°CTÝÎ = 125°CTÝÎ = 175°C

---

1.651.671.65

2.05- V

Gate-emitter threshold voltage V•ŠñÚÌò I† = 0.29mA, V†Š = V•Š 4.1 5.1 5.7 V

Zero gate voltage collector current I†Š»V†Š = 600V, V•Š = 0VTÝÎ = 25°CTÝÎ = 175°C

--

--

40.01000.0

µA

Gate-emitter leakage current I•Š» V†Š = 0V, V•Š = 20V - - 100 nA

Transconductance gËÙ V†Š = 20V, I† = 20.0A - 10.9 - S

Electrical Characteristic, at Electrical Characteristic, at Electrical Characteristic, at Electrical Characteristic, at TTTTÝÎ = 25°C, unless otherwise specifiedÝÎ = 25°C, unless otherwise specifiedÝÎ = 25°C, unless otherwise specifiedÝÎ = 25°C, unless otherwise specified

Valuemin. typ. max.


Dynamic CharacteristicInput capacitance CÍþÙ - 1100 -

Output capacitance CÓþÙ - 70 -

Reverse transfer capacitance CØþÙ - 32 -

V†Š = 25V, V•Š = 0V, f = 1MHz pF

Gate charge Q• V†† = 480V, I† = 20.0A, V•Š = 15V - 120.0 - nC

Internal emitter inductancemeasured 5mm (0.197 in.) from caseLŠ - 13.0 - nH

Short circuit collector currentMax. 1000 short circuitsTime between short circuits: ú 1.0s

I†ñ»†ò V•Š = 15.0V, V†† ù 400V, TÝÎ ù 150°C, t»† ù 5µs - 120 - A

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Rev. 1.1 2010-02-01

Switching Characteristic, Inductive Load, at Switching Characteristic, Inductive Load, at Switching Characteristic, Inductive Load, at Switching Characteristic, Inductive Load, at TTTTÝÎ = 25°CÝÎ = 25°CÝÎ = 25°CÝÎ = 25°C

Valuemin. typ. max.


IGBT CharacteristicTurn-on delay time tÁñÓÒò - 17 - ns

Rise time tØ - 23 - ns

Turn-off delay time tÁñÓËËò - 194 - ns

Fall time tË - 11 - ns

Turn-on energy EÓÒ - 0.56 - mJ

Turn-off energy EÓËË - 0.24 - mJ

Total switching energy EÚÙ - 0.80 - mJ

TÝÎ = 25°C,V†† = 400V, I† = 20.0A,V•Š = 0.0/15.0V,r• = 14.6Â, Lÿ = 75nH,Cÿ = 30pFLÿ, Cÿ from Fig. EEnergy losses include “tail” anddiode reverse recovery.

Anti-Parallel Diode Characteristic, at Anti-Parallel Diode Characteristic, at Anti-Parallel Diode Characteristic, at Anti-Parallel Diode Characteristic, at TTTTÝÎ = 25°CÝÎ = 25°CÝÎ = 25°CÝÎ = 25°C

Diode reverse recovery time tØØ - 112 - ns

Diode reverse recovery charge QØØ - 0.39 - µC

Diode peak reverse recovery current IØØÑ - 11.0 - A

Diode peak rate of fall of reverserecovery current during tÉ diØØ/dt - -750 - A/µs

TÝÎ = 25°C,Vç = 400V,IŒ = 20.0A,diŒ/dt = 1000A/µs

Switching Characteristic, Inductive Load, at Switching Characteristic, Inductive Load, at Switching Characteristic, Inductive Load, at Switching Characteristic, Inductive Load, at TTTTÝÎ = 175°CÝÎ = 175°CÝÎ = 175°CÝÎ = 175°C

Valuemin. typ. max.


IGBT CharacteristicTurn-on delay time tÁñÓÒò - 16 - ns

Rise time tØ - 21 - ns

Turn-off delay time tÁñÓËËò - 227 - ns

Fall time tË - 14 - ns

Turn-on energy EÓÒ - 0.71 - mJ

Turn-off energy EÓËË - 0.36 - mJ

Total switching energy EÚÙ - 1.07 - mJ

TÝÎ = 175°C,V†† = 400V, I† = 20.0A,V•Š = 0.0/15.0V,r• = 14.6Â, Lÿ = 75nH,Cÿ = 30pFLÿ, Cÿ from Fig. EEnergy losses include “tail” anddiode reverse recovery.

Anti-Parallel Diode Characteristic, at Anti-Parallel Diode Characteristic, at Anti-Parallel Diode Characteristic, at Anti-Parallel Diode Characteristic, at TTTTÝÎ = 175°CÝÎ = 175°CÝÎ = 175°CÝÎ = 175°C

Diode reverse recovery time tØØ - 191 - ns

Diode reverse recovery charge QØØ - 0.91 - µC

Diode peak reverse recovery current IØØÑ - 14.2 - A

Diode peak rate of fall of reverserecovery current during tÉ diØØ/dt - -500 - A/µs

TÝÎ = 175°C,Vç = 400V,IŒ = 20.0A,diŒ/dt = 1000A/µs

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Rev. 1.1 2010-02-01

Figure 1.Figure 1.Figure 1.Figure 1. Collector current as a function of switchingCollector current as a function of switchingCollector current as a function of switchingCollector current as a function of switchingfrequencyfrequencyfrequencyfrequency(TÎù175°C, D=0.5, V†Š=600V, V•Š=15/0V,R•=14,6Â)

f, SWITCHING FREQUENCY [kHz]

I†, COLLECTOR CURRENT [A]

10 100 10000

10

20

30

40

50

60

70

80

90

T†=80°

T†=110°

T†=80°

T†=110°

Figure 2.Figure 2.Figure 2.Figure 2. Forward bias safe operating areaForward bias safe operating areaForward bias safe operating areaForward bias safe operating area(D=0, T†=25°C, TÎù175°C; V•Š=15V)

V†Š, COLLECTOR-EMITTER VOLTAGE [V]


1 10 100 10000.1

1

10

100

tÔ=1µs

10µs

50µs

100µs

200µs

500µs

DC

Figure 3.Figure 3.Figure 3.Figure 3. Power dissipation as a function of casePower dissipation as a function of casePower dissipation as a function of casePower dissipation as a function of casetemperaturetemperaturetemperaturetemperature(TÎù175°C)

T†, CASE TEMPERATURE [°C]

PÚÓÚ, POWER DISSIPATIO

N [W]

25 50 75 100 125 150 1750

20

40

60

80

100

120

140

160

180

Figure 4.Figure 4.Figure 4.Figure 4. Collector current as a function of caseCollector current as a function of caseCollector current as a function of caseCollector current as a function of casetemperaturetemperaturetemperaturetemperature(V•Šú15V, TÎù175°C)

T†, CASE TEMPERATURE [°C]


25 50 75 100 125 150 1750

10

20

30

40

5


Rev. 1.1 2010-02-01

Figure 5.Figure 5.Figure 5.Figure 5. Typical output characteristicTypical output characteristicTypical output characteristicTypical output characteristic(TÎ=25°C)



0 2 4 60

10

20

30

40

50

60

70

80

V•Š=20V

17V

15V

13V

11V

9V

7V

5V

Figure 6.Figure 6.Figure 6.Figure 6. Typical output characteristicTypical output characteristicTypical output characteristicTypical output characteristic(TÎ=175°C)



0 2 4 6 80

10

20

30

40

50

60

70

80

V•Š=20V

17V

15V

13V

11V

9V

7V

5V

Figure 7.Figure 7.Figure 7.Figure 7. Typical transfer characteristicTypical transfer characteristicTypical transfer characteristicTypical transfer characteristic(V†Š=20V)

V•Š, GATE-EMITTER VOLTAGE [V]


5 6 7 8 9 10 11 120

10

20

30

40

50

60

70TÎ=25°CTÎ=175°C

Figure 8.Figure 8.Figure 8.Figure 8. Typical collector-emitter saturation voltageTypical collector-emitter saturation voltageTypical collector-emitter saturation voltageTypical collector-emitter saturation voltageas a function of junction temperatureas a function of junction temperatureas a function of junction temperatureas a function of junction temperature(V•Š=15V)

TÎ, JUNCTION TEMPERATURE [°C]

V†Š

ñÙÈÚò, COLLECTOR-EMITTER SATURATIO

N [A]

0 25 50 75 100 125 150 1751.0

1.5

2.0

2.5

3.0

3.5

4.0I†=10AI†=20AI†=40A

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Rev. 1.1 2010-02-01

Figure 9.Figure 9.Figure 9.Figure 9. Typical switching times as a function ofTypical switching times as a function ofTypical switching times as a function ofTypical switching times as a function ofcollector currentcollector currentcollector currentcollector current(ind. load, TÎ=175°C, V†Š=400V,V•Š=15/0V, R•=14,6Â, test circuit in Fig.E)


t, SWITCHING TIM

ES [ns]

4 8 12 16 20 24 28 32 36 401

10

100tÁñÓËËòtËtÁñÓÒòtØ

Figure 10.Figure 10.Figure 10.Figure 10. Typical switching times as a function ofTypical switching times as a function ofTypical switching times as a function ofTypical switching times as a function ofgate resistorgate resistorgate resistorgate resistor(ind. load, TÎ=175°C, V†Š=400V,V•Š=15/0V, I†=20A, test circuit in Fig. E)

R•, GATE RESISTOR [Â]

t, SWITCHING TIM

ES [ns]

5 10 15 20 25 30 35 40 45 5010

100


Figure 11.Figure 11.Figure 11.Figure 11. Typical switching times as a function ofTypical switching times as a function ofTypical switching times as a function ofTypical switching times as a function ofjunction temperaturejunction temperaturejunction temperaturejunction temperature(ind. load, V†Š=400V, V•Š=15/0V,I†=20A, R•=14,6Â, test circuit in Fig. E)


t, SWITCHING TIM

ES [ns]

0 25 50 75 100 125 150 1751

10


Figure 12.Figure 12.Figure 12.Figure 12. Gate-emitter threshold voltage as aGate-emitter threshold voltage as aGate-emitter threshold voltage as aGate-emitter threshold voltage as afunction of junction temperaturefunction of junction temperaturefunction of junction temperaturefunction of junction temperature(I†=0.29mA)


V•ŠñÚÌò, GATE-EMITTER THRESHOLD VOLTAGE [V]

0 25 50 75 100 125 150 1752

3

4

5

6typ.min.max.

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Rev. 1.1 2010-02-01

Figure 13.Figure 13.Figure 13.Figure 13. Typical switching energy losses as aTypical switching energy losses as aTypical switching energy losses as aTypical switching energy losses as afunction of collector currentfunction of collector currentfunction of collector currentfunction of collector current(ind. load, TÎ=175°C, V†Š=400V,V•Š=15/0V, R•=14,6Â, test circuit in Fig.E)


E, SWITCHING ENERGY LOSSES [mJ]

4 8 12 16 20 24 28 32 36 400.0

0.5

1.0

1.5

2.0

2.5

3.0EÓËËEÓÒ*EÚÙ*

Figure 14.Figure 14.Figure 14.Figure 14. Typical switching energy losses as aTypical switching energy losses as aTypical switching energy losses as aTypical switching energy losses as afunction of gate resistorfunction of gate resistorfunction of gate resistorfunction of gate resistor(ind. load, TÎ=175°C, V†Š=400V,V•Š=15/0V, I†=20A, test circuit in Fig. E)

R•, GATE RESISTOR [Â]


5 10 15 20 25 30 35 40 45 500.00

0.25

0.50

0.75

1.00

1.25

1.50

1.75


Figure 15.Figure 15.Figure 15.Figure 15. Typical switching energy losses as aTypical switching energy losses as aTypical switching energy losses as aTypical switching energy losses as afunction of junction temperaturefunction of junction temperaturefunction of junction temperaturefunction of junction temperature(ind load, V†Š=400V, V•Š=15/0V, I†=20A,R•=14,6Â, test circuit in Fig. E)



0 25 50 75 100 125 150 1750.00

0.25

0.50

0.75

1.00


Figure 16.Figure 16.Figure 16.Figure 16. Typical switching energy losses as aTypical switching energy losses as aTypical switching energy losses as aTypical switching energy losses as afunction of collector emitter voltagefunction of collector emitter voltagefunction of collector emitter voltagefunction of collector emitter voltage(ind. load, TÎ=175°C, V•Š=15/0V, I†=20A,R•=14,6Â, test circuit in Fig. E)



200 250 300 350 400 4500.00

0.25

0.50

0.75

1.00

1.25


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Rev. 1.1 2010-02-01

Figure 17.Figure 17.Figure 17.Figure 17. Typical gate chargeTypical gate chargeTypical gate chargeTypical gate charge(I†=20A)

Q•Š, GATE CHARGE [nC]

V•Š, G

ATE-EMITTER VOLTAGE [V]

0 20 40 60 80 100 120 1400

2

4

6

8

10

12

14

16120V480V

Figure 18.Figure 18.Figure 18.Figure 18. Typical capacitance as a function ofTypical capacitance as a function ofTypical capacitance as a function ofTypical capacitance as a function ofcollector-emitter voltagecollector-emitter voltagecollector-emitter voltagecollector-emitter voltage(V•Š=0V, f=1MHz)


C, CAPACITANCE [pF]

0 10 20 3010

100

1000

CÍÙÙCÓÙÙCØÙÙ

Figure 19.Figure 19.Figure 19.Figure 19. Typical short circuit collector current as aTypical short circuit collector current as aTypical short circuit collector current as aTypical short circuit collector current as afunction of gate-emitter voltagefunction of gate-emitter voltagefunction of gate-emitter voltagefunction of gate-emitter voltage(V†Šù600V, start atTÎ=25°C)


I†ñ»†ò, SHORT CIRCUIT COLLECTOR CURRENT [A]

10 12 14 16 18 2050

100

150

200

250

300

Figure 20.Figure 20.Figure 20.Figure 20. Short circuit withstand time as a functionShort circuit withstand time as a functionShort circuit withstand time as a functionShort circuit withstand time as a functionof gate-emitter voltageof gate-emitter voltageof gate-emitter voltageof gate-emitter voltage(V†Šù600V, start at TÎù150°C)


t»†, SHORT CIRCUIT W

ITHSTAND TIM

E [µs]

10 11 12 13 14 150

3

6

9

12

15

9


Rev. 1.1 2010-02-01

Figure 21.Figure 21.Figure 21.Figure 21. IGBT transient thermal impedanceIGBT transient thermal impedanceIGBT transient thermal impedanceIGBT transient thermal impedance(D=tÔ/T)

tÔ, PULSE WIDTH [s]

ZÚÌœ†, TRANSIENT THERMAL IMPEDANCE [K/W

]

1E-6 1E-5 1E-4 0.001 0.01 0.1 10.001

0.01

0.1

1

D=0.5

0.2

0.1

0.05

0.02

0.01

single pulse

i: rÍ[K/W]: Í[s]:

1 0.07041042 9.6E-5

2 0.3070851 6.8E-4

3 0.3198984 0.01084623

4 0.1871538 0.06925485 τ

Figure 22.Figure 22.Figure 22.Figure 22. Diode transient thermal impedance as aDiode transient thermal impedance as aDiode transient thermal impedance as aDiode transient thermal impedance as afunction of pulse widthfunction of pulse widthfunction of pulse widthfunction of pulse width(D=tÔ/T)

tÔ, PULSE WIDTH [s]

ZÚÌœ†, TRANSIENT THERMAL IMPEDANCE [K/W

]

1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 10.001

0.01

0.1

1

D=0.5

0.2

0.1

0.05

0.02

0.01

single pulse

i: rÍ[K/W]: Í[s]:

1 0.4398 1.3E-4

2 0.6662 1.1E-3

3 0.4734 7.1E-3

4 0.3169 0.04629 τ

Figure 23.Figure 23.Figure 23.Figure 23. Typical reverse recovery time as aTypical reverse recovery time as aTypical reverse recovery time as aTypical reverse recovery time as afunction of diode current slopefunction of diode current slopefunction of diode current slopefunction of diode current slope(Vç=400V)

diŒ/dt, DIODE CURRENT SLOPE [A/µs]

tØØ, REVERSE RECOVERY TIM

E [ns]

600 800 1000 1200 1400 160050

100

150

200

250TÎ=25°C, IF = 10ATÎ=175°C, IF = 10A

Figure 24.Figure 24.Figure 24.Figure 24. Typical reverse recovery charge as aTypical reverse recovery charge as aTypical reverse recovery charge as aTypical reverse recovery charge as afunction of diode current slopefunction of diode current slopefunction of diode current slopefunction of diode current slope(Vç=400V)


QØØ, REVERSE RECOVERY CHARGE [µC]

800 900 1000 1100 1200 1300 1400 1500 16000.00

0.25

0.50

0.75

1.00

TÎ=25°C, IF = 10ATÎ=175°C, IF = 10A

10


Rev. 1.1 2010-02-01

Figure 25.Figure 25.Figure 25.Figure 25. Typical reverse recovery current as aTypical reverse recovery current as aTypical reverse recovery current as aTypical reverse recovery current as afunction of diode current slopefunction of diode current slopefunction of diode current slopefunction of diode current slope(Vç=400V)


IØØ, REVERSE RECOVERY CURRENT [A]

800 900 1000 1100 1200 1300 1400 1500 16006

8

10

12

14

16

18TÎ=25°C, IF = 10ATÎ=175°C, IF = 10A

Figure 26.Figure 26.Figure 26.Figure 26. Typical diode peak rate of fall of reverseTypical diode peak rate of fall of reverseTypical diode peak rate of fall of reverseTypical diode peak rate of fall of reverserecovery current as a function of dioderecovery current as a function of dioderecovery current as a function of dioderecovery current as a function of diodecurrent slopecurrent slopecurrent slopecurrent slope(Vç=400V)


dIØØ/dt, diode peak rate of fall of IØØ [A/µs]

800 900 1000 1100 1200 1300 1400 1500 1600-1400

-1200

-1000

-800

-600

-400

-200

0TÎ=25°C, IF = 10ATÎ=175°C, IF = 10A

Figure 27.Figure 27.Figure 27.Figure 27. Typical diode forward current as aTypical diode forward current as aTypical diode forward current as aTypical diode forward current as afunction of forward voltagefunction of forward voltagefunction of forward voltagefunction of forward voltage

VŒ, FORWARD VOLTAGE [V]

IŒ, FORWARD CURRENT [A]

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.50

5

10

15

20

25

30

35

40TÎ=25°CTÎ=175°C

Figure 28.Figure 28.Figure 28.Figure 28. Typical diode forward voltage as aTypical diode forward voltage as aTypical diode forward voltage as aTypical diode forward voltage as afunction of junction temperaturefunction of junction temperaturefunction of junction temperaturefunction of junction temperature


VŒ, FORWARD VOLTAGE [V]

0 25 50 75 100 125 150 1751.00

1.25

1.50

1.75

2.00

2.25

2.50I†=5AI†=10AI†=20A

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Rev. 1.1 2010-02-01

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Rev. 1.1 2010-02-01

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Rev. 1.1 2010-02-01

Published byInfineon Technologies AG81726 Munich, Germany81726 München, Germany© 2010 Infineon Technologies AGAll Rights Reserved.

Legal DisclaimerThe information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. Withrespect to any examples or hints given herein, any typical values stated herein and/or any information regarding theapplication of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, includingwithout limitation, warranties of non-infringement of intellectual property rights of any third party.

InformationFor further information on technology, delivery terms and conditions and prices, please contact the nearest InfineonTechnologies Office (www.infineon.com).

WarningsDue to technical requirements, components may contain dangerous substances. For information on the types in question,please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-supportdevices or systems only with the express written approval of Infineon Technologies, if a failure of such components canreasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness ofthat device or system. Life support devices or systems are intended to be implanted in the human body or to support and/ormaintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or otherpersons may be endangered.

Infineon Technologies AG · Infineon Technologies AG Keywords: IK#20N60H3, Rev. 1.1, Vorläufiges...

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Transcript of Infineon Technologies AG · Infineon Technologies AG Keywords: IK#20N60H3, Rev. 1.1, Vorläufiges...