Improved performance in TIPS-pentacene field effect transistors … · Improved performance in...
7
Supporting Information Improved performance in TIPS-pentacene field effect transistors using solvent additives Gil Jo Chae, † Seung-Hyeon Jeong, ‡ Jeong Hoon Baek, † Bright Walker, § Chung Kun Song, ‡,* Jung Hwa Seo, †,* † Department of Materials Physics, Dong-A University, Busan 604-714, South Korea ‡ Department of Electronics Engineering, Dong-A University, Busan 604-714, South Korea § Department of Interdisciplinary Green Energy, Ulsan National Institute of Science and Technology, Ulsan 689-798, South Korea Figure S1. Output characteristics of TIPS-pentacene FETs processed using various DPE concentrations. Electronic Supplementary Material (ESI) for Journal of Materials Chemistry C This journal is © The Royal Society of Chemistry 2013
Transcript of Improved performance in TIPS-pentacene field effect transistors … · Improved performance in...
Supporting Information
Improved performance in TIPS-pentacene field effect transistors using
solvent additives
Gil Jo Chae,† Seung-Hyeon Jeong,
‡ Jeong Hoon Baek,
† Bright Walker,
§ Chung Kun Song,
‡,*
Jung Hwa Seo,†,*
†Department of Materials Physics, Dong-A University, Busan 604-714, South Korea
‡Department of Electronics Engineering, Dong-A University, Busan 604-714, South Korea
§Department of Interdisciplinary Green Energy, Ulsan National Institute of Science and
Technology, Ulsan 689-798, South Korea
Figure S1. Output characteristics of TIPS-pentacene FETs processed using various DPE
concentrations.
Electronic Supplementary Material (ESI) for Journal of Materials Chemistry CThis journal is © The Royal Society of Chemistry 2013
Figure S2. Output characteristics of TIPS-pentacene FETs processed using various CN
concentrations.
Electronic Supplementary Material (ESI) for Journal of Materials Chemistry CThis journal is © The Royal Society of Chemistry 2013
Figure S3. Transfer hysteresis characteristics of TIPS-pentacene FETs with various
concentration of DPE and CN.
Electronic Supplementary Material (ESI) for Journal of Materials Chemistry CThis journal is © The Royal Society of Chemistry 2013
Figure S4. Total resistance (RT) vs. channel length of TIPS-pentacene FETs with (a) DPE and
(b) CN at different additive concentrations.
Electronic Supplementary Material (ESI) for Journal of Materials Chemistry CThis journal is © The Royal Society of Chemistry 2013
Figure S5. SEM images (× 500) of TIPS-pentacene films processed with various DPE (top) and
CN (bottom) concentrations.
Electronic Supplementary Material (ESI) for Journal of Materials Chemistry CThis journal is © The Royal Society of Chemistry 2013
Figure S6. Optical microscope images of TIPS-pentacene FETs processed with various DPE
(top) and CN (bottom) concentrations.
Electronic Supplementary Material (ESI) for Journal of Materials Chemistry CThis journal is © The Royal Society of Chemistry 2013
Figure S7. XRD (001) peaks for TIPS-pentacene films processed with various concentrations
of DPE (left) and CN (right).
Figure S8. UV-Vis absorption spectra of TIPS-pentacene films processed with (a) DPE and (b)
CN prepared using different additive concentrations.
Electronic Supplementary Material (ESI) for Journal of Materials Chemistry CThis journal is © The Royal Society of Chemistry 2013
![Chapter 3 Atmosphere Effect on Pentacene Thin Film Transistors · [56,57] examined the instabilities of the electrical characteristics and the 1/f noise behaviors of pentacene transistors.](https://static.fdocuments.net/doc/165x107/5e81a685737a0617625392ec/chapter-3-atmosphere-effect-on-pentacene-thin-film-transistors-5657-examined.jpg)
