Implementing Low-Power CRC-Half for RFID Circuits

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Qi Mi & Zhi Li ECE 632 – Fall, 2008 University of Virginia

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Implementing Low-Power CRC-Half for RFID Circuits. Qi Mi & Zhi Li ECE 632 – Fall, 2008 University of Virginia. Outline. Introduction Problem Statement Contribution Design Simulation Conclusion Future Work Q & A. Introduction. RFID applications RFID security issues. - PowerPoint PPT Presentation

Transcript of Implementing Low-Power CRC-Half for RFID Circuits

Page 1: Implementing Low-Power CRC-Half for RFID Circuits

Qi Mi & Zhi LiECE 632 – Fall, 2008University of Virginia

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OutlineIntroductionProblem StatementContributionDesignSimulationConclusionFuture WorkQ & A

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IntroductionRFID applications

RFID security issues

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Problem StatementConstraint:

Energy – foremost constraintSizeComplexity

Problem: We seek to find a feasible way of implementing low-power data encryption on RFID tags.

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ContributionImplemented the core hash function (i.e., CRC-

Half) of CRC-MAC with PTM 90nm technology.

Analyzed energy at different operating voltages.

Gave an optimal operating voltage point for CRC-MAC.

Analyzed the trend of leakage current of the circuit.

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CRC-MAC Briefing

Fig 1. A hardware implementation of CRC-MAC

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CRC-MAC Briefing (cont’d)

Fig 2. C implementation of CRC-MAC as keyed one-way function

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Circuit Design

Fig 3. A symbol view of CRC-Half

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Simulation

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Optimization DesignMetric: Total energy consumption

E/op = Eactive + Eleakage = CeffVDD2 + IlkgVDDTD

KnobsLower VDD (subthreshold design)

Robust, require CMOSShorten operation duration

th

DSDSTGSV

V

s

VVV

oLKG eL

WII 110

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SimulationTechnology: PTM 90nm TechnologyCircuit Description: netlistsSimulation Environment

Schematic-level Software: FPGA Advantage 7.0 LS

Circuit-level Software: Cadence 2005 Simulator: Ocean with Spectre

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Simulation (cont’d)Approach

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Spectre Simulation Result

Data word: 0010 1001 0010 1101Key word: 1101 0010 0001 0111Output: 1011 0001 0001 0111

1

1

1

0

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Leakage Current Simulation

s

VVV

oD

DSTGS

L

WII

10

Exponential Reduction as VDD decreases due to DIBL effect

Leakage Current is independent of CLK rate

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Current Waveform in One Cycle

Pavg = α0→1fCeffVDD2

A higher CLK rate helps reduce energy consumption for a certain VDD

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Total Energy per CRC cycleVDD

(V)

Tcr (ns) Iavg (A) Etotal (nJ)

0.5 10 3.09E-05 1.55E-03

0.45 15 1.98E-05 1.33E-03

0.4 20 1.33E-05 1.06E-03

0.35 40 6.20E-06 8.68E-04

0.3 70 3.50E-06 7.36E-04

0.25 200 1.53E-06 7.63E-04

0.2 700 7.16E-07 1.00E-03

0.15 1800 4.84E-07 1.31E-03

/total DD avg CRC CLKE V I n f

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Energy Consumption Plot• The optimal supply voltage is around 0.3V• Leakage energy consumption starts to dominate in the sub-threshold region• Leakage current is taking up a large proportion of average current

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ConclusionCRC-processing circuit is simulated in FPGA

and CadenceAverage and leakage currents are simulatedEnergy consumption comparison for different

VDD and VDD optimization for minimum energy consumption

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Future WorkUse multiple power supplies to speed up the

critical pathSize up some parts of the circuit to increase

speedAdd high VT NMOS to the PDN to reduce

leakage

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Q and A?

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Thank you!