IBM65, TSMC65 & ST65 Characterization and Comparison with IBM90 and UMC130
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Transcript of IBM65, TSMC65 & ST65 Characterization and Comparison with IBM90 and UMC130
IBM65, TSMC65 & ST65 Characterization and Comparison
with IBM90 and UMC130
FO-4 Delay
Inverter Chain
NAND Chain
Emin ComparisonVmin - IBM65: 0.43V TSMC65: 0.41V ST65: 0.41V IBM90: 0.39V UMC130: 0.36V
Delay(@ Emin) - IBM65: 0.490ns TSMC65: 0.28ns ST65: 0.2ns IBM90: 3.09ns UMC130: 1.76ns
gm vs. Id
Energy and Delay Capacitances
Current Density
TT
FF
SS
• IBM 90 : ~ 24 % Variation
• IBM 65 : ~ 19-24 % Variation
• TSMC 65 : ~ 22-28 % Variation
• ST65 : ~ 16-20% Variation
Ion/Ioff at the TT Corner
NFET PFET
Ion/Ioff vs Length
0
50
100
150
200
250
300
350
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450
50 150 250 350 450
Length (nm)
Ion
/Io
ff (
x10^
3)
IBM65
IBM90
TSMC65
ST65
Ion/Ioff vs Length
0
100
200
300
400
500
600
700
50 150 250 350 450
Length (nm)Io
n/Io
ff (
x10^
3)
IBM65
IBM90
TSMC65
ST65
Vth vs. LengthTSMC65 ~ 17% Variation IBM65 ~ 23% Variation ST65 ~ 15% Variation
NFET
PFET
Ron Values
gm vs. Vgs
IBM : 7% Variation TSMC : 3-8% Variation ST : 7% Variation
gmro vs. Vgs at TT• W/L ratio maintained constant over the two technologies
TSMC65IBM65
gmro vs. Vgs at FF
TSMC65IBM65
gmro vs. Vgs at SS
TSMC65 ~ 25% VariationIBM65 ~ 20% Variation
Gate Leakage vs. Vds