I generation cells : Si II generation: thin film cells III …igalson/datas/PV9.pdfI generation...

15
I generation cells : Si II generation: thin film cells III generation cells: beyond the Q-S limit more bands absorbing the light tandem cells, intermediate band cells low dimentional structures more energy from one photon hot carriers, impact ionisation 1 hot carriers, impact ionisation transformation of sunlight UP and DOWN conwerters

Transcript of I generation cells : Si II generation: thin film cells III …igalson/datas/PV9.pdfI generation...

Page 1: I generation cells : Si II generation: thin film cells III …igalson/datas/PV9.pdfI generation cells : Si II generation: thin film cells III generation cells: beyond the Q-S limit

I generation cells : Si

II generation: thin film cellsIII generation cells: beyond the Q-S limit

more bands absorbing the light

tandem cells, intermediate band cells

low dimentional structures

more energy from one photon

hot carriers, impact ionisation

1

hot carriers, impact ionisation

transformation of sunlight

UP and DOWN conwerters

Page 2: I generation cells : Si II generation: thin film cells III …igalson/datas/PV9.pdfI generation cells : Si II generation: thin film cells III generation cells: beyond the Q-S limit

More bands:

multijunction „tandem” cells

2after J. Nelson

for 3 junctions ηηηηmaxmaxmaxmax = 63 % (under max concentration)= 63 % (under max concentration)= 63 % (under max concentration)= 63 % (under max concentration)

Page 3: I generation cells : Si II generation: thin film cells III …igalson/datas/PV9.pdfI generation cells : Si II generation: thin film cells III generation cells: beyond the Q-S limit

Record tandem cells

GaInP/GaAs/InGaAs

3

GaInP/GaAs/Ge; η=37.3 %

(under concentrated light)

η = 33.78 % (1 Sun)

NREL 2007

World present record 44% (942x)

A-SLAM technology (Solar Junction)

(Adjustable Spectrum Lattice Matched)

Page 4: I generation cells : Si II generation: thin film cells III …igalson/datas/PV9.pdfI generation cells : Si II generation: thin film cells III generation cells: beyond the Q-S limit

Multijunction structure (tandem cell)

„tandem cells”

4

Page 5: I generation cells : Si II generation: thin film cells III …igalson/datas/PV9.pdfI generation cells : Si II generation: thin film cells III generation cells: beyond the Q-S limit

Intermediate band cell

5

maximum maximum maximum maximum ηηηη=63 %=63 %=63 %=63 %

EEEEg1g1g1g1=1.93 eV=1.93 eV=1.93 eV=1.93 eV

EEEEg2g2g2g2=0.7 eV=0.7 eV=0.7 eV=0.7 eV

(ZnMn)Te:O

Page 6: I generation cells : Si II generation: thin film cells III …igalson/datas/PV9.pdfI generation cells : Si II generation: thin film cells III generation cells: beyond the Q-S limit

„tandem” cell intermediate band cell

6

maximum maximum maximum maximum η η η η ≅≅≅≅ 63 %63 %63 %63 %

Page 7: I generation cells : Si II generation: thin film cells III …igalson/datas/PV9.pdfI generation cells : Si II generation: thin film cells III generation cells: beyond the Q-S limit

More bands: quantum wells

additional absorption onadditional absorption onadditional absorption onadditional absorption on

7

additional absorption onadditional absorption onadditional absorption onadditional absorption on

energy levels in quantum wellsenergy levels in quantum wellsenergy levels in quantum wellsenergy levels in quantum wells

Page 8: I generation cells : Si II generation: thin film cells III …igalson/datas/PV9.pdfI generation cells : Si II generation: thin film cells III generation cells: beyond the Q-S limit

high energy carriers colected before high energy carriers colected before high energy carriers colected before high energy carriers colected before

thermalisation by energythermalisation by energythermalisation by energythermalisation by energy----selective contacts selective contacts selective contacts selective contacts

(tunneling junctions?)(tunneling junctions?)(tunneling junctions?)(tunneling junctions?)

More energy:

hot carriers cells

8cooling slower in quantum dots?

Page 9: I generation cells : Si II generation: thin film cells III …igalson/datas/PV9.pdfI generation cells : Si II generation: thin film cells III generation cells: beyond the Q-S limit

More energy from one photon:impact ionization

9

1 photon1 photon1 photon1 photon more than 1 electronmore than 1 electronmore than 1 electronmore than 1 electron----hole pairhole pairhole pairhole pair

observed in Si, Ge in PbSe

Page 10: I generation cells : Si II generation: thin film cells III …igalson/datas/PV9.pdfI generation cells : Si II generation: thin film cells III generation cells: beyond the Q-S limit

Impact ionisation in QD

10

Page 11: I generation cells : Si II generation: thin film cells III …igalson/datas/PV9.pdfI generation cells : Si II generation: thin film cells III generation cells: beyond the Q-S limit

up and down converters

11

Page 12: I generation cells : Si II generation: thin film cells III …igalson/datas/PV9.pdfI generation cells : Si II generation: thin film cells III generation cells: beyond the Q-S limit

Quantum dot solar cells

12

Page 13: I generation cells : Si II generation: thin film cells III …igalson/datas/PV9.pdfI generation cells : Si II generation: thin film cells III generation cells: beyond the Q-S limit

Quantum dots

13

PbS QD NREL 4%, Univ Toronto 7%

CdSe QD + TiO2

Page 14: I generation cells : Si II generation: thin film cells III …igalson/datas/PV9.pdfI generation cells : Si II generation: thin film cells III generation cells: beyond the Q-S limit

Quantum dots:

enhancement of photoexcitation spectrum

14

InAs/GaAs doped QD

Page 15: I generation cells : Si II generation: thin film cells III …igalson/datas/PV9.pdfI generation cells : Si II generation: thin film cells III generation cells: beyond the Q-S limit

Challenges and strategies in photovoltaics

15