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  • Hyperspectral Infrared Characterization of Extremely Thin Films with 10 nm Spatial Resolution

    TFUG, Oct. 17, 2019

    Sung Park, sung@molecularvista.com

  • Copyright © 2019 Molecular Vista – All Rights Reserved – Proprietary and ConfidentialApplications Lab

    Molecular Vista Inc (Introduction to the Company)

    2

  • Copyright © 2019 Molecular Vista – All Rights Reserved – Proprietary and ConfidentialApplications Lab

    Chemical Mapping: Elemental Analysis via Electron Microscopy

    http://www.nanolabtechnologies.com/TEM-STEM-EELS-EDShttps://www.aif.ncsu.edu/tem-lab/

    Image credit: North Carolina State Univ. Analytical Instrumentation Facility Image credit: Nanolab Techologies

    Atomic Resolution Elemental Mapping on SrTiO3 crystal by Super X EDS (EDX) system on Titan 80-300 Aberration Corrected Scanning Transmission Electron Microscope

    • Advanced capability for elemental mapping • Atomic-scale resolution in certain circumstances

    Elemental mapping of a device structure by EDS (EDX)

  • Copyright © 2019 Molecular Vista – All Rights Reserved – Proprietary and ConfidentialApplications Lab

    FTIR: Infrared absorption “chemical fingerprint” spectrum

    https://en.wikipedia.org/wiki/Fourier_transform_infrared_spectroscopy#/media/Fi le:FTIR_Interferometer.png

    Image credit: Wikipedia Image credit: Mudunkotuwa et al., Analyst 139, 870-881 (2014).

    • Detailed spectra for analysis and identification of molecular materials • Spatial mapping resolution limited by optical diffraction limit (~ 1 mm)

    Detailed absorption spectrum – chemical “fingerprint”

    FTIR apparatus

  • Copyright © 2019 Molecular Vista – All Rights Reserved – Proprietary and ConfidentialApplications Lab

    PiFM Measurement – Sideband BimodalTM

    f0 – 1 st cantilever resonance

    f1 – 2 nd cantilever resonance

    fm – laser pulse frequency

    Spectrum acquired with PiFM

    f1 – fm = f0

  • Copyright © 2019 Molecular Vista – All Rights Reserved – Proprietary and ConfidentialApplications Lab

    Agreement between Nanoscale PiFM and Bulk FTIR Spectra

    6

  • Copyright © 2019 Molecular Vista – All Rights Reserved – Proprietary and ConfidentialApplications Lab

    Topography

    100 nm

    47.4 nm

    0.0 nm

    1 5

    10 15

    20 25

    30

    Fiber

    Resin

    500 mV

    15

    9

    Wavenumber (cm-1)

    P h

    o to

    -i n

    d u

    c e

    d F

    o rc

    e

    8009001000110012001300140015001600170018001900

    828 1738

    1508 1095

    1264

    16 - 30

    1 - 8

    Interfacial Chemistry (QCL: 760 – 1960 cm-1)

  • Copyright © 2019 Molecular Vista – All Rights Reserved – Proprietary and ConfidentialApplications Lab

    Exceptional Spatial Resolution in Chemical Mapping

    Ps-b-PMMA Block Copolymer, L0 = 22 nm

  • Copyright © 2019 Molecular Vista – All Rights Reserved – Proprietary and ConfidentialApplications Lab

    Surface Sensitivity

    l2

    triple helix collagen

    1 ~ 2 nm

    Sample: Courtesy of Jinhui Tao, PNNL

  • Copyright © 2019 Molecular Vista – All Rights Reserved – Proprietary and ConfidentialApplications Lab

    Complements other Analytical Techniques

    IR PiFM Raman FTIR TOF-SIMS XPS TXRF SEM/EDS TEM Auger

    Species Detected

    M.I. M.I. M.I. M.I. M.I. E.I. E.I. E.I. E.I.

    Imaging/Ma pping Yes Yes Yes Yes Yes Yes Yes Yes Yes

    Lateral Resolution < 10 nm > 0.5 mm > 10 mm > 0.2 mm

    10 mm – 2 mm

    ~ 10 mm 1 nm*

    0.5mm EDS 0.2 nm > 10 nm

    Depth Probed 20 nm > 500 nm 1 mm 1 nm 10 nm 10 nm 1 mm ~ 100 nm 10 nm

    * Imaging M.I. Molecular information E.I. Elemental information

  • Copyright © 2019 Molecular Vista – All Rights Reserved – Proprietary and ConfidentialApplications Lab

    Semiconductor Applications

  • Copyright © 2019 Molecular Vista – All Rights Reserved – Proprietary and ConfidentialApplications Lab

    Area Selective Deposition (ASD)

    Cu SiO2 Cu SiO2 Cu SiO2 Cu SiO2

    SAM

    Cu SiO2 Cu SiO2

    ALD Layer

    Ideal Selective Area Deposition

    Real World Selective Area Deposition

    • SAM Layer • Inhomogeneous and incomplete coverage • Intrusion to SiO2 area, some of which desorb during ALD process

    • ALD Layer • Inhomogeneous coverage

    Difficult to verify processes with existing tools

    metal oxide

  • Copyright © 2019 Molecular Vista – All Rights Reserved – Proprietary and ConfidentialApplications Lab

    Characterization of EUV Resist Exposure

    l2

    Chemically amplified photoresist (tBOC)

    Exposed to EUV light (l = 13.5 nm) at

    ALS Lawrence Berkeley National

    Laboratory.

    Exposure creates shrinkage, resulting

    in depression in topography (a).

    topography phase

    PiFM

    Blue – Unexposed

    Orange – Exposed

  • Copyright © 2019 Molecular Vista – All Rights Reserved – Proprietary and ConfidentialApplications Lab

    Visualization of Local Strain

    Topography

    200 nm

    11.8 nm

    0.0 nm

    SiG e

    SiO 2

    SiG e

    SiO 2

    1 3 5 7

    2 4 6

    PiFM 1122 cm-1

    more strain

    less strain

    1 3 5 7

    2 4 6 80010001200140016001800

    P h

    o to

    -i n

    d u

    c e

    d F

    o rc

    e (

    A rb

    . U

    n it )

    10871122

    1

    2

    3

    4 5 6

    7

    SiGe channel area

    a)

    SiO2 SiGe

    wavenumber (cm-1)

    400 nm

    Combined SiO2 @ 1113 cm-1

    SiGe @ 900 cm-1

    b)

  • Copyright © 2019 Molecular Vista – All Rights Reserved – Proprietary and ConfidentialApplications Lab

    Topography

    500 nm

    45.4 nm

    0.0 nm

    Phase PiFM

    protective layer PET substrate

    silver nanowires

    Imaging Buried Conductive Layer

    hint of a wire

  • Copyright © 2019 Molecular Vista – All Rights Reserved – Proprietary and ConfidentialApplications Lab

    120.0 µV

    0.0 µV 2.00 1.50 1.00 0.50 0

    µm

    2.00

    1.50

    1.00

    0.50

    0

    120.0 µV

    0.3 µV 2.00 1.50 1.00 0.50 0

    µm

    2.00

    1.50

    1.00

    0.50

    0

    Working with 1D/2D Materials

    100 nm

    691 µV

    335 µV 100 nm

    2.90 nm

    0.00 nm

    PiFM @ 1122 cm-1Topography

    PiFM @ 800 cm-1

    topography 500 nm

    Graphene

    11.1 nm

    0.0 nm

    ML

    MoSe2

    PiFM @ 683 nm PiFM @ 683 nm

    single wall carbon nanotube

    semiconducting metallic

    A b

    so rp

    ti o

    n

    wavelength (nm)

  • Copyright © 2019 Molecular Vista – All Rights Reserved – Proprietary and ConfidentialApplications Lab

    Summary

    17

    • AFM IR technique, PiFM, is introduced. • PiFM measures sample’s complex polarizability via mechanical force detection. • It provides for exceptional spatial resolution (< 10 nm), excellent surface sensitivity

    (monolayer), and ease-of-use. • Vista-IR is a turnkey PiFM systems with visible to mid-IR lasers. • Vista-IR can chemically map and identify organic and inorganic materials via

    localized IR spectrum (from 10 nm x 10 nm region by monolayer volume). • PiFM is useful for many semiconductor applications.