Huai -Yuan Michael Tseng EE C235
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Ink-jet printed ZnO nanowire field effect transistors (APL 91, 043109 2007 ) Self-aligned printing of high- performance polymer thin-film transistors (IEDM 2006) Yong-Young Noh, Xiaoyang Cheng, and Henning Sirringhaus Huai-Yuan Michael Tseng EE C235
description
Ink-jet printed ZnO nanowire field effect transistors ( APL 91, 043109 2007 ) Self-aligned printing of high-performance polymer thin-film transistors (IEDM 2006) Yong-Young Noh, Xiaoyang Cheng, and Henning Sirringhaus. Huai -Yuan Michael Tseng EE C235. Introduction. - PowerPoint PPT Presentation
Transcript of Huai -Yuan Michael Tseng EE C235
Ink-jet printed ZnO nanowire field effect transistors (APL 91, 043109 2007 )
Self-aligned printing of high-performance polymer thin-film
transistors (IEDM 2006)
Yong-Young Noh, Xiaoyang Cheng, and Henning Sirringhaus
Huai-Yuan Michael TsengEE C235
Inorganic semiconductor nanowire field effect transistors (NW-FETs)
Low cost printing process◦ Large area, flexible electronics◦ But required sub-10um resolution◦ Difficult to form ohmic contact when print Si NW
Self-aligned inkjet printing technique Printing of metal oxide NW (ZnO)
Introduction
Self-aligned inkjet printing 1
Self-aligned inkjet printing 2
Self-aligned inkjet printing 3
cyclohexylbenzene(CHB)
Au lift-off SAM treatment on Au Au nanoparticles printed, de-wet ZnO NW
◦ Chemical vapor deposition on a-plane sapphire substrate
◦ dispersed in IPA/ethylene glycol then inkjet printed
Spin-cast PMMA Print PEDOT:PSS
Process
SAM used = 1H, 1H, 2H,2H-perflourodecanethiolPMMA = polymethyl methacrylatePEDOT:PSS = poly3,4-ethylenedioxithiophene
doped with poly-styrene sulfonate
L=500nm
Improved by heating
Without ZnO
With ZnO
Results
All solution process ZnO NW FETs were demonstrated, however
Performance limited by contact resistance as can be proved by a longer channel length device (2um)
Could be improved by using lower work function metal nanoparticle or SAM treatment on Au
Conclusion
