HP-SN4291-8_Materials Characterization With a New Dielectric Spectrometer

download HP-SN4291-8_Materials Characterization With a New Dielectric Spectrometer

of 8

Transcript of HP-SN4291-8_Materials Characterization With a New Dielectric Spectrometer

  • 8/14/2019 HP-SN4291-8_Materials Characterization With a New Dielectric Spectrometer

    1/8

    Introduction

    Dielectric spectroscopy is a

    valuable tool for the

    characterization of materials

    properties. The complex dielectricfunction reflects the molecular

    relaxation and transport processes

    of the material. Since = 'i"

    depends on many different

    physical quantities, dielectric

    measurements often are done as a

    function of frequency,

    temperature, time and DC bias(superimposed static electric

    field). The Novocontrol BDS 6000

    system based on the HP 4291A RF

    Impedance Analyzer automatically

    performs these measurements.

    The HP 4291A RF Impedance

    Analyzer was designed especially

    for impedance measurements and

    uses a new technique developed

    by Hewlett-Packard. This

    technique offers more accurate

    characterization of devices and

    materials. Compared to systemsbased on spectrum or network

    analyzers, it has much higher

    resolution and a broader

    impedance range, which are key

    considerations.

    Materials Characterization

    with a New Dielectric Spectrometer

    Solution Note 4291-8

    Dr. Gerhard Schaumburg

    Novocontrol GmbH

    Novocontrol BDS 6000

    System based on the

    HP4291A RF Impedance

    Analyzer

    New technology offers improved material analysis over a wide range of temperature and

    frequency.

  • 8/14/2019 HP-SN4291-8_Materials Characterization With a New Dielectric Spectrometer

    2/8

    Dielectric Behavior and

    Materials Properties

    Temperature analysis is

    particularly important for thecharacterization of materials, as

    the electric response measured by

    the dielectric function strongly

    depends on temperature.

    From temperature dependence, a

    lot of information on the physical,

    chemical and electrical material

    properties can be obtained. First,

    it can separate isolators,

    polymers, plastics,

    semiconductors, metals and

    superconductors. Second, solid,glass, liquid, gas state and other

    structural phase transitions of the

    material can be distinguished and

    characterized. For each material

    class and state, the temperature

    dependence contains special

    information.

    For isolators, the magnitude andtemperature dependence of theresidual conductance givesinformation about the amount andnature of impurities.

    For polymers and plastics, thedielectric spectra are shifted bytemperature. From temperaturedependence, information onmolecular dynamics likeactivation energy and glasstemperature can be obtained.

    For semiconductors, thetemperature dependence of thedielectric function allowsdetermination of importantelectric parameters like gap

    energy, charge carrier density, andmobility.

    In metals, the temperaturedependence of the dielectricfunction (which here istraditionally expressed in terms ofthe complex conductivity) givesinformation on the electron

    phonon interaction and theresidual resistance.

    At low temperatures, properties ofsuperconductors can also bestudied. This is of particularinterest for high temperature

    superconductors with transitiontemperatures up of -140C andabove. In this case, thetemperature dependence of thedielectric function givesinformation on the mechanism ofhigh temperaturesuperconductivity, which is stillnot resolved.

    The above examples mention only

    the most familiar topics related to

    dielectric temperature analysis. In

    addition there is an unlimited

    number of special problems whichcan be evaluated by temperature

    analysis of the complex dielectric

    function. Therefore, adding

    temperature control to a dielectric

    measurement system multiplies its

    performance.

    System Performance

    In the BDS 6000 system, the

    HP4291A RF Impedance Analyzer

    is enhanced with a high

    performance cryogenictemperature control system which

    was especially designed for

    dielectric applications. The

    complete system is controlled by a

    PC with the MS-Windows software

    package WinDETA. System

    description:

    1 MHz1.8GHz

    -160C to +400C

    -40 V to +40 V

    2 s107s.

    Moreover any combination of

    these parameters is supported.

    These features make the BDS 6000

    superior for world-class scientific

    and engineering applications.

    Applications of Dielectric

    Spectroscopy

    Key scientific applications

    include:Relaxation processes on the

    molecular dynamics of liquid

    crystals, polymers and liquids

    Charge transport in

    semiconductors, organic crystals,

    ceramics, etc.

    Timing development of chemical

    reactions, polymerization and

    curing processes

    Structural material properties like

    phase compositions, phase

    transitions and crystallization

    processesNon-linear electrical and opticaleffects

    Industrial applications include:

    Quality control and

    characterization of isolating and

    semiconductor materials

    Materials that change theirdielectric function if exposed togases or liquids which are used insensor applications

    Another interesting application is

    the characterization of printedcircuit boards. This is necessary,

    as the functional behavior of

    boards, operated with high speed

    electronics up to the GHz range, is

    largely influenced by the dielectric

    properties of the board materials.

    2

  • 8/14/2019 HP-SN4291-8_Materials Characterization With a New Dielectric Spectrometer

    3/8

    System Components

    The BDS 6000 dielectric

    spectrometer consists of the

    following components shown in

    Figure 1:

    A special RF sample cell with the

    sample capacitor,

    A precision microwave extension

    line connecting the sample cell to

    the impedance analyzer,

    HP 4291A RF Impedance Analyzer,

    Temperature control system

    allowing exposure of the sample

    temperatures from -160C to

    +400C with 0.01C stability and

    very short settling times,

    PC with the MS-Windows softwarepackage WinDETA and WinFITthat controls the measurementflow, operates all devices and theevaluates the measured data.

    Principle of Operation

    The material under test generally

    is placed between two electrodes

    creating a capacitor as shown inFigure 2.

    Electrodes

    Sample material

    Figure 2. Sample material placed into ameasurement capacitor.

    The capacitor plates are round

    with a diameter from 1 mm6mm.The spacing between the plates

    may be selected between 2mm

    and 10 mm. For special

    applications other sample

    geometries may be used. The

    sample impedance Zs is related to

    the dielectric function by

    (1) = i =j

    2nfZ1C0

    where fdenotes frequency and C0is the vacuum capacity of the

    empty sample capacitor. The

    sample material is placed between

    two electrodes in a special high

    frequency sample cell shown in

    Figure 6. The sample cell is

    mounted in a cryostat and

    exposed to a heated gas stream

    evaporated from a liquid nitrogen

    dewar (Figure 1). The test head of

    the HP 4291A RF Impedance

    Analyzer is connected to the

    sample cell by a precision

    microwave extension line.

    3

    Figure 1. Novocontrol Dielectric Spectrometer BDS 6000 based on HP4291A RFImpedance Analyzer.

    APC7 ConnectorAPC7 Connector

  • 8/14/2019 HP-SN4291-8_Materials Characterization With a New Dielectric Spectrometer

    4/8

    Measurement Example

    The dielectric function of glycerol

    for temperatures between 193 K

    and 333 K is shown in Figures 3and 4. Figure 3 shows the real part', Figure 4 shows the imaginary

    part '' of the dielectric function.

    The curves represent the main

    dielectric relaxation

    (alpha-relaxation) due to

    orientation polarization of

    permanent dipoles in the applied

    electric field. ' is correlated to thepolarization strength, '' measures

    the electric losses of the

    relaxation and the dc-conductivity.

    For a fixed temperature and low

    frequency, the electric dipoles

    follow the external field without

    delay. The polarization is at a

    constant high level. As frequency

    increases, the dipoles more slowly

    follow the field and are only partly

    oriented. As can be seen from

    Figure 3., the polarization

    decreases. The electric losses

    show a maximum at the crossover

    frequency from high to low

    polarization (Figure4).

    At higher temperatures, the

    mobility of the molecular dipoles

    increases and the relaxationfrequency is shifted to higher

    values. In addition, the

    dc-conductivity caused by thermal

    activated free charge carriers

    increases. This can be seen in

    Figure 4 in the increase of'' on

    the left from the dielectric

    relaxation in the 1 MHz range.

    WinFIT does an analytical

    evaluation of the measured data.

    The solid lines in Figure 3 and 4

    are calculated according to the

    relaxation function of Havriliak-Negami (including the

    Cole-Davidson and Debye

    functions) in combination with an

    ac-conductivity term by the

    evaluation, software WinFIT

    which is a standard part of the

    BDS 6000 system. From this

    evaluation information about the

    molecular dynamics of the

    material like

    Activation energy

    Glass transition temperature

    AC- and DC-conductivity

    Time domain behavior and others

    can be obtained.

    4

    #

    $

    %

    &

    '

    F r e q u e n c y [ H z ]

    !

    "

    #

    E

    p

    s

    '

    [

    ]

    G l y z e r o l

    T e m p . [ K ] = 1 9 3 . 1 5 T e m p . [ K ] = 2 0 3 . 1 5 T e m p . [ K ] = 2 1 3 . 1 5

    T e m p . [ K ] = 2 2 3 . 1 5 T e m p . [ K ] = 2 3 3 . 1 5 T e m p . [ K ] = 2 4 3 . 1 5

    T e m p . [ K ] = 2 5 3 . 1 5 T e m p . [ K ] = 2 6 3 . 1 5 T e m p . [ K ] = 2 7 3 . 1 5

    T e m p . [ K ] = 2 8 3 . 1 5 T e m p . [ K ] = 2 9 3 . 1 5 T e m p . [ K ] = 3 0 3 . 1 5

    T e m p . [ K ] = 3 1 3 . 1 5 T e m p . [ K ] = 3 2 3 . 1 5 T e m p . [ K ] = 3 3 3 . 1 5

    Figure 3.Real part ' ofthe dielectric

    function ofGlycerol for

    severaltemperatures.

    #

    $

    %

    &

    '

    F r e q u e n c y [ H z ]

    #

    #

    E

    p

    s

    '

    '

    [

    ]

    G l y z e r o l

    T e m p . [ K ] = 1 9 3 . 1 5 T e m p . [ K ] = 2 0 3 . 1 5 T e m p . [ K ] = 2 1 3 . 1 5

    T e m p . [ K ] = 2 2 3 . 1 5 T e m p . [ K ] = 2 3 3 . 1 5 T e m p . [ K ] = 2 4 3 . 1 5

    T e m p . [ K ] = 2 5 3 . 1 5 T e m p . [ K ] = 2 6 3 . 1 5 T e m p . [ K ] = 2 7 3 . 1 5

    T e m p . [ K ] = 2 8 3 . 1 5 T e m p . [ K ] = 2 9 3 . 1 5 T e m p . [ K ] = 3 0 3 . 1 5

    T e m p . [ K ] = 3 1 3 . 1 5 T e m p . [ K ] = 3 2 3 . 1 5 T e m p . [ K ] = 3 3 3 . 1 5

    Figure 4.

    Imaginary part" loss index ofthe dielectricfunction of

    Glycerol forseveral

    temperatures.

  • 8/14/2019 HP-SN4291-8_Materials Characterization With a New Dielectric Spectrometer

    5/8

    Impedance Measurement

    In contrast to the low frequency

    techniques, above 10 MHz coaxial

    connecting cables alwaysintroduce errors to impedance

    measurements. Above

    approximately 30 MHz additional

    standing waves arise at the line

    and a direct measurement of the

    sample impedance completely

    fails. This can be avoided by

    application of microwave

    techniques taking the

    measurement line as the main part

    of the measured impedance into

    account. Therefore, the

    connection from the analyzer test

    head to the sample cell is made by

    a coaxial precision line with

    defined and nearly temperature-

    independent propagation

    constants.

    The sample capacitor is used as

    the termination of the extension

    line. The complex reflection factor

    r(l) at the analyzer end of the line

    is dependent on sample

    impedance and is measured with

    the HP 4291A RF Impedance

    Analyzer. The incoming and

    reflected waves are separated

    with two directional couplers and

    are phase sensitive measured.ris

    defined as the ratio of the voltages

    (or electrical fields) of the

    reflected wave to the incoming

    wave on the line. It depends on

    the location of the measurement

    on the line (see Figure 5).

    (2)r x

    U x

    U x

    Ref

    In

    ( )( )

    ( )=

    For an ideal line,r(l) which is

    measured by the analyzer can be

    transformed to the reflection

    factorr(0) at the sample end of

    the line by

    (3)r r l el j

    ( ) ( )( )

    02= +

    where alpha is the damping

    constant and the = 2l/ ( : wavelength)propagation constant of the line.

    From (5), the sample impedance iscalculated by

    (4)Z Z

    r

    rS =

    +

    0

    1 0

    1 0

    ( )

    ( )

    whereZ0 is the wave resistance of

    the line (50 ).

    In practice, lines are not ideal and

    sophisticated calibration

    procedures must be applied. Theline parameters , must be

    homogenous over the entire line

    and also independent of

    temperature, as the calibration

    generally only can be carried out

    at room temperature.

    Figure 5. Reflection factors and

    impedance on a line terminated by thesample.

    The same criteria mentioned for

    the line apply to the sample cell

    shown in Figure 6. Therefore, an

    additional calibration which

    eliminates the influence ofinternal impedances in the sample

    cell is applied. In order to keep the

    wavelength as short as possible,

    the test head of the HP 4291A RF

    Impedance Analyzer is directly

    mounted at the top of the cryostat

    with the sample cell.

    The frequency range is 1 MHz to

    1.8 GHz with a resolution of

    tan()< 10-3 and overlaps with

    other Novocontrol Dielectric

    Analysis Systems in the lowerfrequency range. This is

    important, as the accuracy of

    measurements at the limits of the

    range rapidly decreases.

    5

    Figure 6.

    RF sample cell withcoaxial short and

    sample capacitor.

  • 8/14/2019 HP-SN4291-8_Materials Characterization With a New Dielectric Spectrometer

    6/8

    Quatro Cryosystem

    The Quatro Cryosystem allows the

    user to automatically set any

    sample temperature required. Thesystem is modular and may be

    combined with any Novocontrol

    Dielectric Analysis System. The

    main parts of the system shown in

    Figure 1 are the cryostat, the gas

    jet, and the microprocessor

    controlled Quatro system. The

    Quatro consists of 4 independent

    loops controlling the sample

    temperature, the gas temperature

    (at the gas heater), the

    temperature of the liquid nitrogen

    in the dewar, and the pressure in

    the dewar.

    The liquid nitrogen evaporator

    heats the liquid nitrogen until a

    specified pressure in the dewar is

    reached. The actual pressure is

    controlled by channels 1 and 2 of

    the Quatro controller. The

    pressure is automatically adjusted

    for optimal performance

    depending on the setpoint of the

    sample temperature (high

    pressure at low temperatures, low

    pressure at high temperatures).

    Due to the pressure, the cold gas

    flows out of the dewar through the

    gas jet to the cryostat. The

    transfer line from the dewar to the

    gas jet is vacuum isolated. The gas

    jet is controlled by channel 3 and 4

    of the Quatro controller in order to

    match the actual temperature at

    the sample to the desired

    temperature setpoint. The gas jet

    is mounted directly onto the

    vacuum isolated cryostat in whichthe sample cell is located.

    Due to the high stability of the gas

    pressure and the two circuit

    arrangement of the gas heating,

    the temperature stability is better

    than 0.01 C. Moreover, as the gas

    flows directly along the sample

    cell, this design allows a very fast

    and save operation which is

    required for automatic operating

    systems. Even if the sensors may

    be damaged or the liquid nitrogendewar becomes empty, there will

    be no damage to the system or the

    sample.

    A very important requirement to

    the cryosystem for dielectric

    measurements is a fast

    temperature settling time, as

    settling times constitute most of

    the measurement time and slow

    down the system performance. On

    the other hand, the dielectric

    response may be vary temperaturesensitive (e.g. in the region of

    phase transitions). Therefore, a

    cryosystem that is both fast and

    very accurate is required. Another

    key point is, that after a setpoint

    step, the sample temperature

    should approach the setpoint, but

    should not exceed it. This is

    important if samples near a phase

    transition are measured, but the

    transition temperature must not

    be exceeded as the sample will

    change its structure or evenbecome damaged as in the case

    when it melts.

    The Quatro Cryosystem meets

    these three requirements very

    well. A typical performance

    diagram of a temperature

    frequency measurement from

    -160C to +400C with 22 steps is

    shown in Figure 7. Typical

    stabilization times (for 0.1C

    stability) are about 8 minutes per

    temperature step (20 minutes for0.01C). This means, that the

    demonstration measurement

    (Figure 3, 4) with 15 temperature

    steps is performed in less than

    2hours. Moreover, Figure 7 shows

    that the sample temperature

    follows the setpoint with almost

    no oscillations and without

    overshooting.

    6

    0 100 200 300 400 500-200

    -150

    -100

    -50

    0

    50

    100

    150

    200

    250

    300

    350

    400

    450

    Process ValueSet Point

    Figure 7.Temperaturesetpoint and

    sampletemperature in

    dependence oftime for the

    QuatroCryosystem.

  • 8/14/2019 HP-SN4291-8_Materials Characterization With a New Dielectric Spectrometer

    7/8

  • 8/14/2019 HP-SN4291-8_Materials Characterization With a New Dielectric Spectrometer

    8/8

    For more information on Hewlett-Packard

    Test and Measurement products,applications, or services please call your

    local Hewlett-Packard sales office. Acurrent listing is available via the Web

    through AccessHP at http://www.hp.com. Ifyou do not have access to the internet,

    please contact one of the HP centers listedbelow and they will direct you to your

    nearest HP representative.

    United States:Hewlett-Packard Company

    Test and Measurement Organization5301 Stevens Creek Blvd.

    Bldg. 51L-SCSanta Clara, CA 95052-8059

    1 800 452 4844

    Canada:Hewlett-Packard Canada Ltd.

    5150 Spectrum Way

    Mississauga, OntarioL4W 5G1(905) 206 4725

    Europe:

    Hewlett-PackardEuropean Marketing Centre

    P.O. Box 9991180 AZ Amstelveen

    The Netherlands

    Japan:

    Hewlett-Packard Japan Ltd.

    Measurement Assistance Center9-1, Takakura-cho, Hachioji-shi,

    Tokyo 192, Japan(81) 426 48 3860

    Latin America:

    Hewlett-PackardLatin American Region Headquarters

    5200 Blue Lagoon Drive9th Floor

    Miami, Florida 33126U.S.A.

    (305) 267 4245/4220

    Australia/New Zealand:Hewlett-Packard Australia Ltd.

    31-41 Joseph StreetBlackburn, Victoria 3130

    Australia131 347 ext. 2902

    Asia Pacific:Hewlett-Packard Asia Pacific Ltd17-21/F Shell Tower, Times Square,

    1 Matheson Street, Causeway Bay,Hong Kong

    (852) 2599 7070

    8

    Copyright 1996Hewlett-Packard Company

    Data subject to changePrinted in U.S.A. 01/965964-6522E