HP-SN4291-8_Materials Characterization With a New Dielectric Spectrometer
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Transcript of HP-SN4291-8_Materials Characterization With a New Dielectric Spectrometer
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8/14/2019 HP-SN4291-8_Materials Characterization With a New Dielectric Spectrometer
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Introduction
Dielectric spectroscopy is a
valuable tool for the
characterization of materials
properties. The complex dielectricfunction reflects the molecular
relaxation and transport processes
of the material. Since = 'i"
depends on many different
physical quantities, dielectric
measurements often are done as a
function of frequency,
temperature, time and DC bias(superimposed static electric
field). The Novocontrol BDS 6000
system based on the HP 4291A RF
Impedance Analyzer automatically
performs these measurements.
The HP 4291A RF Impedance
Analyzer was designed especially
for impedance measurements and
uses a new technique developed
by Hewlett-Packard. This
technique offers more accurate
characterization of devices and
materials. Compared to systemsbased on spectrum or network
analyzers, it has much higher
resolution and a broader
impedance range, which are key
considerations.
Materials Characterization
with a New Dielectric Spectrometer
Solution Note 4291-8
Dr. Gerhard Schaumburg
Novocontrol GmbH
Novocontrol BDS 6000
System based on the
HP4291A RF Impedance
Analyzer
New technology offers improved material analysis over a wide range of temperature and
frequency.
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Dielectric Behavior and
Materials Properties
Temperature analysis is
particularly important for thecharacterization of materials, as
the electric response measured by
the dielectric function strongly
depends on temperature.
From temperature dependence, a
lot of information on the physical,
chemical and electrical material
properties can be obtained. First,
it can separate isolators,
polymers, plastics,
semiconductors, metals and
superconductors. Second, solid,glass, liquid, gas state and other
structural phase transitions of the
material can be distinguished and
characterized. For each material
class and state, the temperature
dependence contains special
information.
For isolators, the magnitude andtemperature dependence of theresidual conductance givesinformation about the amount andnature of impurities.
For polymers and plastics, thedielectric spectra are shifted bytemperature. From temperaturedependence, information onmolecular dynamics likeactivation energy and glasstemperature can be obtained.
For semiconductors, thetemperature dependence of thedielectric function allowsdetermination of importantelectric parameters like gap
energy, charge carrier density, andmobility.
In metals, the temperaturedependence of the dielectricfunction (which here istraditionally expressed in terms ofthe complex conductivity) givesinformation on the electron
phonon interaction and theresidual resistance.
At low temperatures, properties ofsuperconductors can also bestudied. This is of particularinterest for high temperature
superconductors with transitiontemperatures up of -140C andabove. In this case, thetemperature dependence of thedielectric function givesinformation on the mechanism ofhigh temperaturesuperconductivity, which is stillnot resolved.
The above examples mention only
the most familiar topics related to
dielectric temperature analysis. In
addition there is an unlimited
number of special problems whichcan be evaluated by temperature
analysis of the complex dielectric
function. Therefore, adding
temperature control to a dielectric
measurement system multiplies its
performance.
System Performance
In the BDS 6000 system, the
HP4291A RF Impedance Analyzer
is enhanced with a high
performance cryogenictemperature control system which
was especially designed for
dielectric applications. The
complete system is controlled by a
PC with the MS-Windows software
package WinDETA. System
description:
1 MHz1.8GHz
-160C to +400C
-40 V to +40 V
2 s107s.
Moreover any combination of
these parameters is supported.
These features make the BDS 6000
superior for world-class scientific
and engineering applications.
Applications of Dielectric
Spectroscopy
Key scientific applications
include:Relaxation processes on the
molecular dynamics of liquid
crystals, polymers and liquids
Charge transport in
semiconductors, organic crystals,
ceramics, etc.
Timing development of chemical
reactions, polymerization and
curing processes
Structural material properties like
phase compositions, phase
transitions and crystallization
processesNon-linear electrical and opticaleffects
Industrial applications include:
Quality control and
characterization of isolating and
semiconductor materials
Materials that change theirdielectric function if exposed togases or liquids which are used insensor applications
Another interesting application is
the characterization of printedcircuit boards. This is necessary,
as the functional behavior of
boards, operated with high speed
electronics up to the GHz range, is
largely influenced by the dielectric
properties of the board materials.
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System Components
The BDS 6000 dielectric
spectrometer consists of the
following components shown in
Figure 1:
A special RF sample cell with the
sample capacitor,
A precision microwave extension
line connecting the sample cell to
the impedance analyzer,
HP 4291A RF Impedance Analyzer,
Temperature control system
allowing exposure of the sample
temperatures from -160C to
+400C with 0.01C stability and
very short settling times,
PC with the MS-Windows softwarepackage WinDETA and WinFITthat controls the measurementflow, operates all devices and theevaluates the measured data.
Principle of Operation
The material under test generally
is placed between two electrodes
creating a capacitor as shown inFigure 2.
Electrodes
Sample material
Figure 2. Sample material placed into ameasurement capacitor.
The capacitor plates are round
with a diameter from 1 mm6mm.The spacing between the plates
may be selected between 2mm
and 10 mm. For special
applications other sample
geometries may be used. The
sample impedance Zs is related to
the dielectric function by
(1) = i =j
2nfZ1C0
where fdenotes frequency and C0is the vacuum capacity of the
empty sample capacitor. The
sample material is placed between
two electrodes in a special high
frequency sample cell shown in
Figure 6. The sample cell is
mounted in a cryostat and
exposed to a heated gas stream
evaporated from a liquid nitrogen
dewar (Figure 1). The test head of
the HP 4291A RF Impedance
Analyzer is connected to the
sample cell by a precision
microwave extension line.
3
Figure 1. Novocontrol Dielectric Spectrometer BDS 6000 based on HP4291A RFImpedance Analyzer.
APC7 ConnectorAPC7 Connector
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Measurement Example
The dielectric function of glycerol
for temperatures between 193 K
and 333 K is shown in Figures 3and 4. Figure 3 shows the real part', Figure 4 shows the imaginary
part '' of the dielectric function.
The curves represent the main
dielectric relaxation
(alpha-relaxation) due to
orientation polarization of
permanent dipoles in the applied
electric field. ' is correlated to thepolarization strength, '' measures
the electric losses of the
relaxation and the dc-conductivity.
For a fixed temperature and low
frequency, the electric dipoles
follow the external field without
delay. The polarization is at a
constant high level. As frequency
increases, the dipoles more slowly
follow the field and are only partly
oriented. As can be seen from
Figure 3., the polarization
decreases. The electric losses
show a maximum at the crossover
frequency from high to low
polarization (Figure4).
At higher temperatures, the
mobility of the molecular dipoles
increases and the relaxationfrequency is shifted to higher
values. In addition, the
dc-conductivity caused by thermal
activated free charge carriers
increases. This can be seen in
Figure 4 in the increase of'' on
the left from the dielectric
relaxation in the 1 MHz range.
WinFIT does an analytical
evaluation of the measured data.
The solid lines in Figure 3 and 4
are calculated according to the
relaxation function of Havriliak-Negami (including the
Cole-Davidson and Debye
functions) in combination with an
ac-conductivity term by the
evaluation, software WinFIT
which is a standard part of the
BDS 6000 system. From this
evaluation information about the
molecular dynamics of the
material like
Activation energy
Glass transition temperature
AC- and DC-conductivity
Time domain behavior and others
can be obtained.
4
#
$
%
&
'
F r e q u e n c y [ H z ]
!
"
#
E
p
s
'
[
]
G l y z e r o l
T e m p . [ K ] = 1 9 3 . 1 5 T e m p . [ K ] = 2 0 3 . 1 5 T e m p . [ K ] = 2 1 3 . 1 5
T e m p . [ K ] = 2 2 3 . 1 5 T e m p . [ K ] = 2 3 3 . 1 5 T e m p . [ K ] = 2 4 3 . 1 5
T e m p . [ K ] = 2 5 3 . 1 5 T e m p . [ K ] = 2 6 3 . 1 5 T e m p . [ K ] = 2 7 3 . 1 5
T e m p . [ K ] = 2 8 3 . 1 5 T e m p . [ K ] = 2 9 3 . 1 5 T e m p . [ K ] = 3 0 3 . 1 5
T e m p . [ K ] = 3 1 3 . 1 5 T e m p . [ K ] = 3 2 3 . 1 5 T e m p . [ K ] = 3 3 3 . 1 5
Figure 3.Real part ' ofthe dielectric
function ofGlycerol for
severaltemperatures.
#
$
%
&
'
F r e q u e n c y [ H z ]
#
#
E
p
s
'
'
[
]
G l y z e r o l
T e m p . [ K ] = 1 9 3 . 1 5 T e m p . [ K ] = 2 0 3 . 1 5 T e m p . [ K ] = 2 1 3 . 1 5
T e m p . [ K ] = 2 2 3 . 1 5 T e m p . [ K ] = 2 3 3 . 1 5 T e m p . [ K ] = 2 4 3 . 1 5
T e m p . [ K ] = 2 5 3 . 1 5 T e m p . [ K ] = 2 6 3 . 1 5 T e m p . [ K ] = 2 7 3 . 1 5
T e m p . [ K ] = 2 8 3 . 1 5 T e m p . [ K ] = 2 9 3 . 1 5 T e m p . [ K ] = 3 0 3 . 1 5
T e m p . [ K ] = 3 1 3 . 1 5 T e m p . [ K ] = 3 2 3 . 1 5 T e m p . [ K ] = 3 3 3 . 1 5
Figure 4.
Imaginary part" loss index ofthe dielectricfunction of
Glycerol forseveral
temperatures.
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Impedance Measurement
In contrast to the low frequency
techniques, above 10 MHz coaxial
connecting cables alwaysintroduce errors to impedance
measurements. Above
approximately 30 MHz additional
standing waves arise at the line
and a direct measurement of the
sample impedance completely
fails. This can be avoided by
application of microwave
techniques taking the
measurement line as the main part
of the measured impedance into
account. Therefore, the
connection from the analyzer test
head to the sample cell is made by
a coaxial precision line with
defined and nearly temperature-
independent propagation
constants.
The sample capacitor is used as
the termination of the extension
line. The complex reflection factor
r(l) at the analyzer end of the line
is dependent on sample
impedance and is measured with
the HP 4291A RF Impedance
Analyzer. The incoming and
reflected waves are separated
with two directional couplers and
are phase sensitive measured.ris
defined as the ratio of the voltages
(or electrical fields) of the
reflected wave to the incoming
wave on the line. It depends on
the location of the measurement
on the line (see Figure 5).
(2)r x
U x
U x
Ref
In
( )( )
( )=
For an ideal line,r(l) which is
measured by the analyzer can be
transformed to the reflection
factorr(0) at the sample end of
the line by
(3)r r l el j
( ) ( )( )
02= +
where alpha is the damping
constant and the = 2l/ ( : wavelength)propagation constant of the line.
From (5), the sample impedance iscalculated by
(4)Z Z
r
rS =
+
0
1 0
1 0
( )
( )
whereZ0 is the wave resistance of
the line (50 ).
In practice, lines are not ideal and
sophisticated calibration
procedures must be applied. Theline parameters , must be
homogenous over the entire line
and also independent of
temperature, as the calibration
generally only can be carried out
at room temperature.
Figure 5. Reflection factors and
impedance on a line terminated by thesample.
The same criteria mentioned for
the line apply to the sample cell
shown in Figure 6. Therefore, an
additional calibration which
eliminates the influence ofinternal impedances in the sample
cell is applied. In order to keep the
wavelength as short as possible,
the test head of the HP 4291A RF
Impedance Analyzer is directly
mounted at the top of the cryostat
with the sample cell.
The frequency range is 1 MHz to
1.8 GHz with a resolution of
tan()< 10-3 and overlaps with
other Novocontrol Dielectric
Analysis Systems in the lowerfrequency range. This is
important, as the accuracy of
measurements at the limits of the
range rapidly decreases.
5
Figure 6.
RF sample cell withcoaxial short and
sample capacitor.
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Quatro Cryosystem
The Quatro Cryosystem allows the
user to automatically set any
sample temperature required. Thesystem is modular and may be
combined with any Novocontrol
Dielectric Analysis System. The
main parts of the system shown in
Figure 1 are the cryostat, the gas
jet, and the microprocessor
controlled Quatro system. The
Quatro consists of 4 independent
loops controlling the sample
temperature, the gas temperature
(at the gas heater), the
temperature of the liquid nitrogen
in the dewar, and the pressure in
the dewar.
The liquid nitrogen evaporator
heats the liquid nitrogen until a
specified pressure in the dewar is
reached. The actual pressure is
controlled by channels 1 and 2 of
the Quatro controller. The
pressure is automatically adjusted
for optimal performance
depending on the setpoint of the
sample temperature (high
pressure at low temperatures, low
pressure at high temperatures).
Due to the pressure, the cold gas
flows out of the dewar through the
gas jet to the cryostat. The
transfer line from the dewar to the
gas jet is vacuum isolated. The gas
jet is controlled by channel 3 and 4
of the Quatro controller in order to
match the actual temperature at
the sample to the desired
temperature setpoint. The gas jet
is mounted directly onto the
vacuum isolated cryostat in whichthe sample cell is located.
Due to the high stability of the gas
pressure and the two circuit
arrangement of the gas heating,
the temperature stability is better
than 0.01 C. Moreover, as the gas
flows directly along the sample
cell, this design allows a very fast
and save operation which is
required for automatic operating
systems. Even if the sensors may
be damaged or the liquid nitrogendewar becomes empty, there will
be no damage to the system or the
sample.
A very important requirement to
the cryosystem for dielectric
measurements is a fast
temperature settling time, as
settling times constitute most of
the measurement time and slow
down the system performance. On
the other hand, the dielectric
response may be vary temperaturesensitive (e.g. in the region of
phase transitions). Therefore, a
cryosystem that is both fast and
very accurate is required. Another
key point is, that after a setpoint
step, the sample temperature
should approach the setpoint, but
should not exceed it. This is
important if samples near a phase
transition are measured, but the
transition temperature must not
be exceeded as the sample will
change its structure or evenbecome damaged as in the case
when it melts.
The Quatro Cryosystem meets
these three requirements very
well. A typical performance
diagram of a temperature
frequency measurement from
-160C to +400C with 22 steps is
shown in Figure 7. Typical
stabilization times (for 0.1C
stability) are about 8 minutes per
temperature step (20 minutes for0.01C). This means, that the
demonstration measurement
(Figure 3, 4) with 15 temperature
steps is performed in less than
2hours. Moreover, Figure 7 shows
that the sample temperature
follows the setpoint with almost
no oscillations and without
overshooting.
6
0 100 200 300 400 500-200
-150
-100
-50
0
50
100
150
200
250
300
350
400
450
Process ValueSet Point
Figure 7.Temperaturesetpoint and
sampletemperature in
dependence oftime for the
QuatroCryosystem.
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For more information on Hewlett-Packard
Test and Measurement products,applications, or services please call your
local Hewlett-Packard sales office. Acurrent listing is available via the Web
through AccessHP at http://www.hp.com. Ifyou do not have access to the internet,
please contact one of the HP centers listedbelow and they will direct you to your
nearest HP representative.
United States:Hewlett-Packard Company
Test and Measurement Organization5301 Stevens Creek Blvd.
Bldg. 51L-SCSanta Clara, CA 95052-8059
1 800 452 4844
Canada:Hewlett-Packard Canada Ltd.
5150 Spectrum Way
Mississauga, OntarioL4W 5G1(905) 206 4725
Europe:
Hewlett-PackardEuropean Marketing Centre
P.O. Box 9991180 AZ Amstelveen
The Netherlands
Japan:
Hewlett-Packard Japan Ltd.
Measurement Assistance Center9-1, Takakura-cho, Hachioji-shi,
Tokyo 192, Japan(81) 426 48 3860
Latin America:
Hewlett-PackardLatin American Region Headquarters
5200 Blue Lagoon Drive9th Floor
Miami, Florida 33126U.S.A.
(305) 267 4245/4220
Australia/New Zealand:Hewlett-Packard Australia Ltd.
31-41 Joseph StreetBlackburn, Victoria 3130
Australia131 347 ext. 2902
Asia Pacific:Hewlett-Packard Asia Pacific Ltd17-21/F Shell Tower, Times Square,
1 Matheson Street, Causeway Bay,Hong Kong
(852) 2599 7070
8
Copyright 1996Hewlett-Packard Company
Data subject to changePrinted in U.S.A. 01/965964-6522E