Hitachi Chemical Metal CMP Slurry and Low-K Material...Courtesy of Hitachi Central Research...
Transcript of Hitachi Chemical Metal CMP Slurry and Low-K Material...Courtesy of Hitachi Central Research...
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Shigeru Nobe, Matthew Tsai, Larry Inouye
H.Sakurai, J.Amanokura
Hitachi Chemical
Hitachi Chemical Metal CMP Slurry and Low-K Material
CMPUG / August 7,2002
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DelaminationDelamination
delamination
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1 Low mechanical strength of Low k material 2 Poor adhesion between Low k and CVD 3 High down force Cu polishing
Low kCVD Barrier Metal
CuPad Slurry
1
2
3
Why delamination happens ?
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Hitachi Chemical Cu / Low-k Integration Process Solution
Cu-CMP slurry• Low down force
polishing
Low-k material• High mechanical
strength
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For barrierFor Cu (AFP) Conventional
Appearance of Abrasive Free Polishing (AFP) solution
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Polishing Model
Pad Reaction layer
Abrasive Free
Cu
Down Force
Pad
Down Force
CuO(Cu2O)
Conventional
Cu
Abrasive
Polishing pad shear force Abrasive powder
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Item Conventional Abrasive Free Merit
Micro Scratch
Particle Residue
Dishing
Erosion
Increase in Yield
Increase inReliability
Designed Resistivity
Designed Resistivity
Designed ResistivitySiO Loss2
Advantages of AFP
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Concepts of Cu slurry for Low-k Change reaction layer with new formulation
The structure, hardness, thickness & formation speed are optimized
For Low down force polishing
HS-C500-X
Insulator
Cu
Reaction layer
Pad
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Performance of new Cu slurry (HS-C500-X) for Low-K
63 a.u. -Friction*
(vs conventional on: 100)
High RRHigh planarityLow Friction
-Feature
5350> 50001.5psi
NoneNoneCu Residue
500 ***
500 ***
7400
HS-C500-X
> 55002.0psi
< 500
< 500
Target
Cu Loss**(Ang.,9.0/1.0um)
Dishing(Ang.,100um/100um)
CuRemoval Rate
(Ang./min)(NU:1sig.%)
Items
*: Estimated value from pad temp.**: Erosion+Dishing, ***: DF = 2psi, Wafer: Sematech 854, OP=30%
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Influence of Young’s modulus on Cu-CMP
SOG
SOG
Cap CVD
Cohesive fracture
Courtesy of Hitachi Central Research Laboratory
Youn
g's
mod
ulus
(GPa
)
Dielectric constant
0
1
2
3
4
5
6
7
8
1.5 2 2.5 3 3.5
CMP passed (Blanket wafer)
CMP failed
HSG-7000
××××××××
××××××××
OK !
××××
Cross Sectional SEM
Requirements for low k1) Bulk k : < 2.22) Modulus : > 4GPa3) Good Adhesion to CVD
(Selection of CVD film)
Delamination
HSG-8000
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Concepts of HSG-7000
Spin-on DielectricSiloxane PolymerPorous Materialk < 2.2
Si OR
n
R: organic group
Material Design Concepts・・・・ Process Compatibility・・・・ Low Organic Content・・・・ Low Pore Volume・・・・ Narrow Pore Size
Distribution
HSG-7000
Good Process Compatibility・・・・ High Mechanical Strength・・・・ Cu-CMP Resistivity
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Film Properties of HSG series 1)
MethodologyHSG-R7HSG-7000Property
—Non-PorousPorousType
Crack Threshold(mm)
Out-gassing(relative value)
Weight loss [%]
Young’s modulus [GPa]
Dielectric constant
1.5
1
< 1
4.4
—> 2.5
Nano-indentation 2)4.3
TDS0.6
Isothermal TGA, 425ºC, 2h< 1
1) Cure conditions : 400 ºC / 30min under N2 atmosphere2) Nano-indenter DCM by MTS
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Cap layerSi
HSG-7000 (300nm)
Cu Barrier metal
• Slurry : HS-C500-X
• Polisher : Conventional Rotary type Polisher
Cu-CMP Process— Combination of HSG-7000 with HS-C500-X —
No delamination !
• Structure (Blanket wafer)
HSG-7000 (E = 4.3GPa)
Low-k
Cu
Low-k
Conventional (E = 2.0GPa)
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(1) Abrasive free Cu-CMP slurry hassuccessfully developed.
(2) Cu CMP slurry which can achieve low down force polishing is newly formulated.
(3) HSG-7000 which has high mechanical strength is developed though Cu-CMP test.
Summary