Heterogeneous Technology Alliance - vtt.fi · Heterogeneous Technology Alliance 23-Aug-11 | Page 2...

HeterogeneousTechnology

AllianceSOI MEMS Platform

Heterogeneous Technology Alliance

23-Aug-11 | Page 1

Added value of HTA SOI MEMS Platform to customers


23-Aug-11 | Page 2

Attractive offering of HTA SOI MEMS PlatformOne-stop shop

Very extensive R&D resources, 900 researchers

Industrialization bridging the gap between prototyping and production

Can provide prototyping and process development

Large set of process modules44

33

22

11

Large set of processing equipment with back-up/second source options

Large set of SOI MEMS devices in offering

66

55


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SOI MEMS Platform

• HTA offers leading SOI MEMS process platform for research, prototyping andpilot production as well as production ramp-up services

VISION

• Makes the large arsenal of tools available for customers and all HTA partners

• Bridging the gap between research and manufacturing

• Strengthening the European position in MEMS field

• Helping researcher to do their work, through networking, creating new projects,and fostering innovations.

MISSION


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• Platform purpose

• To create flexibility in designing andmanufacturing new components

• Customer needs can be better met throughjoining our arsenal of capabilities

• Open up our arsenal to all HTA partners

• Definition

• Platform forms a basis for research andproduct development

• Platform enables flexible processing capabilityand prototyping

Platforms

Prod

uct1

Prod

uct2

Component1 Component2

Product portfolio

Component1 Component2

Platform purpose and definition


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Example of SOI MEMS fabrication cycle


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• This platform covers Silicon-on-Insulator (SOI) MEMS fabricationcapabilities of all HTA partners

• Makes use of the properties of low stress single-crystalline silicon, whereactive structures are typically formed by deep reactive ion etching.

• SOI MEMS is typically used for• Silicon oscillators• Microphones, speakers• Compass, navigation, motion sensors• Sensors and actuators• Energy harvesting• Micro fuel cells, microfluidics• Other deep reactive-ion etched micro structures

Technical definition of SOI MEMS Platform


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Fraunhofer(100, 150 and

200 mm)

Customer2Externalfoundry

HTA

SO

I MEM

SPL

AT

FOR

M

R&D

Prod.HTA facilities

CSEMNeuchâtel

(100 and 150 mm)

VTTEspoo

(150 mm)

CEA LETIGrenoble(200 mm)

Customer needs

Resulting technology

TRLfiles

HTA SOI MEMS Platform

Tech1 Tech3 Tech5 Tech7


23-Aug-11 | Page 8

BerlinBerlin

ItzehoeItzehoe

DuisburgDuisburg

ErlangenErlangen

FreiburgFreiburg

GrenobleGrenoble

MunichMunich

DresdenDresdenChemnitzChemnitz

200 mm

150 mm

M(O)EMS processing


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BerlinBerlin

ItzehoeItzehoe

DuisburgDuisburg

ErlangenErlangen

FreiburgFreiburg

GrenobleGrenoble

MunichMunich


Wafer-level,100~200 mm

Plastic

Packaging


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BerlinBerlin

ItzehoeItzehoe

DuisburgDuisburg

ErlangenErlangen

FreiburgFreiburg

GrenobleGrenoble

MunichMunich


300 mm

200 mm

150 mm

HelsinkiHelsinki

CMOS processing


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BerlinBerlin

ItzehoeItzehoe

DuisburgDuisburg

ErlangenErlangen

FreiburgFreiburg

GrenobleGrenoble

MunichMunich


Organics

Compoundsemicond.

LTCC

Processing on specificsubstrates


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FraunhoferResponsible person:

front end CMOS-line available for 8 inch wafers

SiliconGlassCeramics (i.e. PZT, LTCC,...)Lithium Niobate / Lithium Tantalateothers

©/x/n name of equipment ©/x/n name of equipment ©/x/n name of equipmentRCA clean 1 & 2 x beaker x Arias x Arias

Piranha clean x beaker x beaker x beaker

DI-H2O flushing x beaker x Arias x Arias

Thermal Oxidation odry x CentroTherm x CentroTherm

wet x CentroTherm x CentroTherm

RTA x Heatpulse 610 x Heatpulse 610

Chemical Vapour Deposition - CVDSiO2 - low pressure x LPT x LPTSiO2 - plasma enhanced x P5000 / Oxford x P5000 / OxfordSi3N4 x LPT x LPTSi3N4 - plasma enhanced x P5000 / Oxford x P5000 / Oxford

poly-Si x LPT x LPT

SiON - plasma enhanced

TEOS - plamsa enhanced

alpha-Si - plasma enhanced

Special feature:

Name of institute:

Contact:

Applicable materials in MEMS fabrication facilityChip-Level 100 mm Wafer-Level 150 mm Wafer-Level

x x x

x x x

x x

x x

Availability for different substrates and name of equipmentChip-Level 100 mm Wafer-Level 150 mm Wafer-Level

Saphire, SiC, Ge 2'' wafer Saphire, SiC, Ge

Front-End-of-Line

• Example page of process step and equipment list tofacilitate quick and efficient response

• Access available through each partner

Process steps andequipment list


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• Full processing capability for SOI-MEMS• SOI or cavity-SOI• 100 and 150 mm wafer size• Wide range of wafer bonding processes• Through-glass vias• i-line lithography (1 µm)• High-aspect ratio structures by DRIE

• Output: device wafers or diced device wafers• Internal and external options for packaging

• Future development• In-house wafer-level encapsulation• TSV

Technical description

• MEMS developments from R&D to industrializationsince 1985

• ISO-certified fabrication procedures• Activity ranging from R&D to small series

production• Highly flexible processing options• System engineering through wide application

portfolio• Dedicated staff for MEMS project management,

R&D and production• First class reliability (HRXRD and microscopy)

laboratory• World-class partners through HTA and EU projects

Competitive edge

CSEM contribution to SOI MEMS Platform


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• Micromirror• Commercialized by Sercalo

• Resonators from 32 kHz to 5 MHz• Precision micromechanical parts• Production for several watchmakers

• Tunable blazed diffraction grating• Blazing, tilted, mirror surfaces

y = 0.000305x3 - 0.023882x2 + 0.004834x - 0.121196R2 = 0.999114

-80

-60

-40

-20

0

20

40

-40 -30 -20 -10 0 10 20 30 40

T [°C]

F/F o

(ppm

)

G5_#20_A_110

0.005 ppm/°C

= -23.8 ppb/°C2

= 305 ppt/°C3

70 kHz, passive compensation

CSEM MEMS Device examples


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CEA Leti contribution to SOI MEMS Platform

• General process flow containing well-establishedsequences and steps

• 200 mm wafer size• Thin and thick SOI wafer bonding cavity-SOI• Multi wafers assembly• Double side wafer stepper lithography (0.4

µm)• High-aspect ratio structures by DRIE

• Output: device wafers or diced device wafers• Wafer level hermetic packaging• Thin film packaging• TSV

• Future development:• 3D integration with electronics


• SOI Manufacturing knowhow since 1990• Industrial type processing facilities• Characterization and reliability platform• Wafer level packaging and 3D integration line• Experienced, well-trained personnel• A strong experience in industrial transfers• ISO 9001 certified• World-class partners through HTA and EU projects

Competitive edge


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Inertialsensors

ResonatorsGaz sensors array 3D force sensor

TM

Leti MEMS device examples


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VTT contribution to SOI MEMS Platform

• General process flow containing well-establishedsequences and steps

• SOI or cavity-SOI• 150 mm wafer size• i-line lithography (0.5 µm)• High-aspect ratio structures by DRIE• Plug-up –method and HF-vapor etching

• Design rules and standard processes (negotiable)• Output: device wafers or diced device wafers

• Encapsulation with HTA partners• Option: 3rd party encapsulation (e.g. VTITechnologies)

• Future development:• In-house wafer-level encapsulation• TSV• 200 mm wafer size


• MEMS R&D processing since 1991 andproduction for customers since 1997

• ISO9001-certified fabrication procedures• Infrastructure meeting the standards of R&D

and small-medium scale production• Flexible practices for R&D purposes• Dedicated staff for research, wafer processing

and maintenance• Strategic partnerships with key MEMS

companies• World-class partners through HTA and EU

projects

Competitive edge


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FPI Thermopile

• Magnetometerbased on theLorentz force

• Resonator• Low phase noise, Q~120 000

• Pressure sensor• CMOS monolithically integrated

• Carbon dioxide meter• Commercialized with Vaisala Oyj

VTT MEMS Device examples


23-Aug-11 | Page 19

FhG contribution to SOI MEMS Platform

• Technological experience for monolithically integratedMEMS and CMOS

• Clean Room for R&D and fabrication• Wafer size: 100, 150 and 200 mm• Wafer stepper lithography, mask aligner , High-aspect ratio

structures by DRIE processes• Standard SOI and epi-poly-SOI• SOI wafer bonding and patterning, cavity-SOI (bonding and

deep RIE)• Gas phase etching (HF or XeF2)• Wafer grinding and dicing (with IR-capability)• In house wafer level packaging (glass-frit, eutectic, direct,

anodic bonding, metal thermocompression)• Vacuum package (also with getter material)• Wafer level test

• High temperature 1.0µm CMOS process based on thinfilm SOI for 250°C

• Smart Power (600V) process based on thin film SOI• Single crystalline diodes based on SOI for micro

bolometers• Future development:

• integration with electronics• Thin film encapsulation


• More than 25 years experience in MEMS R&D• Broad equipment base with flexible processes• Experienced, well-trained personnel• Customer specific processes can be developed

and integrated• Technology transfer to other fabs on customers

demand• Small scale production and medium-large scale

production support• 3 Shift operating for fast development• ISO 9001:2008 certified, ISO/TS 16949

conformal (depending on the institute)• Strategic partnerships with key MEMS

companies• World-class partners through HTA and EU

projects

Competitive edge


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Vacuum packaged 2D MEMS scanning mirror(FhG ISIT Itzehoe)

SOI processing of 2D MEMSscanner (FhG IPMS Dresden)

Step-by-step switch-gear(FhG ENAS Chemnitz)

Diode Bolometer(FhG IMS Duisburg)

thermalisolation

Reflector

Si basic

Si active

FhG contribution to SOIMEMS Platform


23-Aug-11 | Page 21

P.M.1 P.M.2 P.M.3

Localsite

HTA 2 HTA 3

Requestby customer

Feasibility, cost

Technology/processing need

• Contact person and coordinator• Acts as a matchmaker between the specialists• Know-how of design rules• Know-how of processing capabilities and limitations• Pricing, scheduling, and resourcing

Platform Manager’s (P.M.) role

• One-stop shop• In case of multiple offers the partner who supplies

the best offer from customer point of view will beused (delivery time, experience, cost, suitability ofprocessing equipment)

• Information is also directly transferred between thespecialists (platform managers are kept informed).

Key principles of operation

Operation of the Platform


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Platform Manager VTT

• [email protected]

Tel. +358 40 848 5029

• Deputy [email protected]

Tel. +358 20 722 6306

Platform Manager CEA

• [email protected](Business case)

Tel. +3343878202022

• [email protected](Equipment & Process)

Tel. +33438784587

Platform Manager FhG


Tel. +49 371 45001 233

Mobile +49 1733 7272 59


Platform Manager CSEM


Tel. +41 32 720 5441


Tel. +41 32 720 5441

Access to Platform services

mailto:[email protected]








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