HBT InP 芯 - mops.twse.com.twmops.twse.com.tw/nas/STR/499120180521M001.pdf · Revenue Mix % vs...
Transcript of HBT InP 芯 - mops.twse.com.twmops.twse.com.tw/nas/STR/499120180521M001.pdf · Revenue Mix % vs...
May 5, 2016 GCS Confidential
環宇GCSHandse
t
WLANWiMAX
VCO
Infr
a-
stru
cture
MM
Wave
OC768 LED
HFET
InGaP HBT
InPHBT
GaN
PHEMT
IPD芯
環宇
系天下
2
GCS Holdings, Inc.
GCS Holdings @Cayman
Islands
GCS, LLC
IPO9/15/2014
Stock ID: 4991
GCS
Device
Technologies
Taiwan (100%) USA (100%)
Global
Advanced
Semiconductors
Xiamen (49%)
D-Tech
Optoelectronics
JV withSanan IC(SAIC)[6” WaferPure-play
Wafer Foundry]D-Tech Taiwan
KGD:PD/LD
Backend Ops
WorldwideSales &
Marketing
KGD:PD/LD
FrontendWafer Fab
2/3/4/6”Foundry
Wafer Fab
KGD:APD Frontend
Wafer Fab
KGD:APD Backend
Chip Fab
3
GCS – SAIC JV (GAS)
GCS Holdings (Cayman Islands)
Xiamen
Sanan IC
(SAIC)
51%49%
North
AmericaROW
BusinessTerritory
6” wafer foundry
@Xiamen
@Xiamen
Global
Advanced
Semiconductors
4
GCS Businesses
Brand Name OptoChip Products
Wafer Foundry
RF
PowerElectronics
Optoelectronics
PD/MPD
APD
VCSEL
LDKGD: Known-Good-Die
KGD
5
Revenue Mix % vs Gross Margin - QoQ
APD
included
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KGD Revenue Mix - QoQ
APD
included
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GCSBrand NameOptical Chips
Products
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GCS Brand Name Chip Products:Applications & Markets
PD, MPD, APD, VCSEL, LD
AOCHDMIMobile
Wearable
LTE4G
4.5G5G
40G100G200G400G
Data Centers
Consumer &
IoT
LTEBASE
STATION
FTTx2.5G10G25G
PON
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Production
Development
KGD Products Roadmap
850nmPD
1310/1550nm
PD
2.5G=<8
G2.5GFP
10GFP
25G
2.5GDFB
10GDFB
MPD
25G
EC MPD
2018
10G
400G
1G
MPDArray
400G
1G
1310/1550nm
MPD
1310/1550nm
APD850nmVCSEL
10G
1310nmLD
BI
BI: backside illuminated
Non-hermetic
Receiver Transmitter
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TO-CAN/COB
TOSA/ROSA/BOSA
Transceiver
環宇芯
OFC Ecosystem
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40G100G200G400G
GCS Inside Mega Data Center
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Ethernet Transceivers Shipment by Data Rate(Historical Data and Forecast)
Source: LightCounting’s 2016 report
- 25Gx4 VCSEL- 100G GaAs PD- 100/200/400G InGaAs PD
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Small base station
Small base stationLarge capacitybase station
OE Conversion Module光電轉換模塊
OE Conversion Module光電轉換模塊
環宇芯inside/HP PA
6G/10G/25Gbps
環宇芯inside/HF PA
6G/10G/25Gbps
環宇芯inside/HF PA
6G/10G/25Gbps
GCS Inside Large and Small Base Station
宏基站
小基站
小基站
Internet
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Shipments of optical transceivers used in wirelessinfrastructure (Historical Data and Forecast)
Source: LightCounting’s 2016 report
25G starts taking off
25G/28G PDs
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OLT
ONU
GCS Inside Your Building, Your Home
環宇芯inside
環宇芯inside2.5Gbps/10Gbps/25Gbps APD
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-
10,000,000
20,000,000
30,000,000
40,000,000
50,000,000
60,000,000
70,000,000
80,000,000
90,000,000
2010 2011 2012 2013 2014 2015 2016 2017 2018 2019 2020 2021
Un
its
BPON GPON EPON NG PON Point-to-point
FTTx Transceiver Unit Shipments by Type(Historical Data and Forecast)
XG-PON starts to take off
Source: LightCounting’s 2016 report
10G APD25G APD
2.5G APD2.5G STIA PD
Sole supplierTo HuaweiSTIA BOSA
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RF Wafer Foundry
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RF Foundry:Applications & Markets
RF Wafer Foundry
RFIC、HEMT、pHEMT、HBT,InP HBT, GaN/Si、GaN/SiC
1GHz to 94GHz
Base Station4/4.5/5G
Smart Phones(6” partner)
Wifi802.11AC802.11AX
Wireless(Mobile & Infrastructure
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IF Filter
LO Chain (VCO, Multiplier)
Filter
• SAWBAW
• IPD
• SAW • MMIC
• HEMT• HBT • Si
• PHEMT• GaAs/InP HBT• GaN HEMT• CMOS
• HBT
Typical RF Transceiver Block DiagramsGCS has all the Preferred Device Technologies
T/R Switch
LNA IF Filter IF Amp
LO Chain (VCO, Multiplier)
Filter
Antenna
Mixer
PA
Mixer
• HEMT• GaAs• InP PIN• Si PIN• SOI
• HEMT
• SAW • MMIC
• SAWBAW • IPD
• HEMT• High fco SBD
• HEMT• High fco SBD
• HEMT• HBT • Si
• HBTReceiver
Transmitter
ADC
DAC
• Si• GaAs/InP
HBT
• Si• GaAs/InP
HBT
IF AmpVariable Attenua
tor
• HEMT
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What 5G Needs?
• Super High Linearity PAs
• High Frequency PAs
• High Frequency Filters
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Major RF Markets for Compound Semiconductors
Market Drivers
– 4G Cellphone and 802.11ac WLAN
– 5G Wireless Network
• 2018: 4.5G , f <6GHz
• 2020: 28GHz phased-array single-chip PA/LNA/Phase Shifter
– Aerospace and Defense Microelectronics
– Wide-bandgap semiconductor power electronics
– 100Gbps / 400Gbps Ethernet, Mega Datacenter, Automotive, IoT
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RF Technology Roadmap- Market Driven Strategy
Wireless
– 2017: 0.4um & 0.25um GaN/Si HEMT, 0.5um GaN/SiC HEMT
– Next 3 years: 0.25um/0.15um GaN HEMT (5G BTS, VSAT), BAW filter (4G, 4.5G cellphone), P3 GaAs HBT (4.5G cellphone), mmW PA InP HBT (5G cellphone), mmW mixer (5G BTS), RF PIN mmW switch (5G BTS)
Aerospace and Defense
– 2017: 0.25um GaN HEMT, THz mixer diode, 0.25um E/D-HFET, RF PIN
– Next 3 years: 0.1um PHEMT, 0.15um GaN HEMT, GaN/Diamond.
Power Electronics
– 2017: SiC Diode and JFET
– Next 3 years: SiC MOSFET, GaN/Si MISHEMT
Optical Communication Network
– 2017: InP HBT for 100G laser driver
– Next 3 years: Gen-3 InP HBT for 100G/400G TIA and Laser driver, 25G EPIC
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RF Technology Selection
Microwave Components 0.25-0.5um PHEMT/GaN HEMT for switch, LNA, mixer, saturated PA
GaAs HBT for VCO, doubler/prescaler, mixer, linear and saturated PA
High fco Schottky diode (THz diode) for low-loss mixer
Millimeter-Wave Components 0.1-0.15um PHEMT/GaN HEMT for LNA, mixer, saturated PA
InP HBT for VCO, doubler/prescaler, mixer, linear PA
High fco Schottky diode for low-loss mixer
Fiber-optical IC Components (40G and above) 0.1-0.15um PHEMT or InP DHBT for laser driver
InP SHBT or DHBT for TIA, limiting amp, Mux, Demux
High-speed Instruments 0.1-0.15um PHEMT for analog components (amps, mixers, etc.)
InP HBT for digital/mixed signal components (ADC, DAC, freq. source)
Mixed-signal ICs InP HBT for high data rate, high resolution A-D and D-A Converters
GCS has All the RF Technologies
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GCS Processes for 5G
Below 6 GHz
0.25um – 0.4um GaN HEMT for BTS PA
P3 InGaP HBT for handset PA
If phased array is needed, HBT-PIN switch for single-chip PA-Phase Shifter
BAW for >2GHz RF filters
mmW (28 – 40 GHz)
0.15um GaN HEMT for BTS wide band PA
InP HBT for handset PA
InP HBT-PIN switch for single-chip PA-Phase Shifter
0.25um InP HEMT-PIN for single-chip LNA-Phase Shifter
InP BiHEMT for single-chip PA/LNA/Switch/Phase Shifter
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InP Technologies
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• InP HBT allows single power supply for PA and LNA
• Superior PA efficiency at mmWave frequencies
• Integrate InP HEMT LNA/Switch for small size
• InP HBT and HEMT for high Ft without E-beam writer
• Performance always wins at RF Front-end
Why InP Technologies?
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Components
Market
Size
(2020)
Semiconductor
Technologies
1 Power Amplifier $4.2B GaAs HBT, E/D HEMT, InP HBT-PIN
2 RF Filter $5B BAW
3 Cellphone Base Station Power Amplifier $1.5B GaAs HBT, GaN HEMT, RF PIN
4 Aerospace & Defense T/R Module $0.8B GaAs HEMT, GaN HEMT, HBT, RF PIN
5 Power Electronics HV Diode and Switch $5B SiC, GaN/Si HEMT
6 Optical Communication PD, Laser, TIA, Driver Amp $1.2B GaAs HEMT, InP HBT, Optoelectroncs
7 Automotive, Consumer Auto Radar, T/R Module $0.5B GaAs HEMT, GaN HEMT, VCSEL
Cellphone/Tablet
(4G, 4.5G, 5G)
Platform
Major RF Market Opportunities
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Source: Duet Microelectronics
5G FEM Forecast
BIG MARKET!
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Global Filter Market
Source: Qualcomm
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3G/4G Filter Technology Mapping(from TriQuint 10/30/2013 Analyst Day Presentation)
1 GHz 2 GHz 5 GHz
RF Content in LTE Phone
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Comparison of SAW and BAW
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Advantages of BAW- Higher Frequency, Lower loss, Higher power handling- Better temperature stability, Steeper filter sidewall- Smaller size, MEMS or GaAs fab compatible/scalable
Two Types of BAW Structure
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Solidly Mounted ResonatorBAW-SMR: TriQuint et al.
Film Bulk Acoustic ResonatorFBAR: Avago et al.
GCS uses a modified FBAR approach for- Lower loss- Easier process- Patentable process
Substrate
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RF Filters Market
Source: Mobile Expert 2016
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RF BAW Filters Market(Wafers)
Source: Simon saysSimon Yu, Jan 2018
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Power ElectronicsWafer Foundry
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Power Electronics Foundry:Applications & Markets
Power Electronics Wafer Foundry
GaN/Si, SiC
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OptoelectronicsWafer Foundry
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Optoelectronics Foundry:Applications & Markets
Optoelectronics Wafer Foundry
APD, VCSEL, FP/DFB LD, EML, 2D Image Sensors
Photonic Integrated Circuits……
Optical
Fiber
Networks
Industrial Medical Consumer
VCSEL(3D Sensing)
LD
VCSELImager
VCSEL/APDLD
VCSEL/DFBEML/PIC
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Future Growth Roadmap
RF Wafer Foundry
4G5G PA
5G Filter
3D VCSEL
6” FAB
Up to 30,000wafers/month
5G
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GCS IS READY FOR 5G AND 400G
5G:• Super High Linearity HBT Processes
• High Frequency PHEMT Processes
• High Frequency Filters Process
400G: 100G/200G in production• Super Fast Photodiodes• VCSEL coming soon
6”FAB
(soon)
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Other Technologies ForHigh Volume Products
• High PCE VCSEL for 3D Sensing (on 6” wafer)(proven for production)
• Advanced APD array for LiDAR
• Advanced Micro-LED process
• VCSEL with integrated micro-lens for ADAS and LiDAR
• GaAs high power laser for commercial cooking
Other Future Growth Engines
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3D Sensing VCSEL Market Size
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3D Sensing VCSEL Market Size (in smartphones)(6” Wafers)
Source: Simon saysSimon Yu, Jan 2018
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DataCenter
Metro
5GAccess
LongHaul
100G » 200G » 400G
10G/40G » 100G » 200G/400G
10G/40G » 100G » 200G
3G » 4G » 5G
High volume 6” FABSuper High Linearity HBTHigh Frequency HBT andPHEMTHigh Frequency Filters
2.5G » 10G » 25G
Growth Cycle
Brand name optical chips
Brand name optical chips
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5G is coming!萬物互聯無縫連接無所不能
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More Traffic 5G
- 4K/8K 超高清- VR/AR- Smart Everything- IoT-自動駕車-無人機。。。。
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Mobile Wireless Technology Evolution
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What is 5G? 萬物互聯!
GCS Confidential
Unlimited access to information and the ability to sharedata anywhere, Anytime by anyone and anything
Source: Nokia
20 Gbps
4G:1 Gbps
4G:10 ms
4G:10 Mbps
4G:100K nodes/Km2
1 out of 100m packets lost
三大應用場景
八大指標
海量 極速
超 寬
Enabling a Mobilized Economy!
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How Fast is 5G?
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Courtesy: Yole
Spectrum for 5G
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Courtesy: Yole
5G Applications
GCS High
Frequency:
0.1um PHEMT
InP HBTGCS High
Linearity HBT
GCS High
Frequency
BAW Filter
GCS 100/200/400G Chips
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5G will do whatever and whenever
you want it to do!
~7 B mobile devices in use in 2030.
45 B+ OTHER devices!
Sources: 4G Americas, Qualcomm, WRC, districoffuture.eu,
ExtremeTech, Groupe Canam, SmartGrid.gov, WSJ,
marinscope.com, Naledi3D.com, Q2 Serves.uk.com
5G
Smart Cities
Autonomous
Vehicles
Object Tracking
Smart Grid
Remote Industrial
Control
Process
Automation
Wearables &
Sensors
Disaster,
Emergency
Management
Traffic Control
V2V / V2X
High Traffic Venues
Immersive Video
Mobile Holographic Display
Augmented Reality
Low-latency
Cloud Gaming
Medical Monitoring
TelesurgeryLow-rate, Latency-
Tolerant, High-Security
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Courtesy: Yole
5G Ecosystem
We are here!
56
Courtesy: Yole
RF Component and Module Supply Chain
GCS
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5G Example
On Sept 29, 2017, participants at the EU Digital Summit in Estonia remotely controlled an industrial excavator over an ultrafast live 5G network as part of the first public live 5G trial in Europe, madepossible by Ericsson, Intel and Telia. (Credit: Intel Corporation)
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5G Example
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LTE-V2X
60
5G Enables Huge Business Potential
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5G: Everything is possibleunder the Sun
太陽底下沒有什麼不可能!
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DataCenter
Metro
5GAccess
LongHaul
100G » 200G » 400G
10G/40G » 100G » 200G/400G
10G/40G » 100G » 200G
3G » 4G » 5G
High volume 6” FABSuper High Linearity HBTHigh Frequency HBT andPHEMTHigh Frequency Filters
2.5G » 10G » 25G
Growth Cycle
Brand name optical chips
Brand name optical chips
GCS Proprietary63
May 18, 2018
Simon Yu 余有崇
Senior Vice President
General Manager
Worldwide Sales & Marketing
Component Business Group
US: (650) 892 8676
Taiwan:(886) (0 )918 818 824
China: (86) 136 9989 4206
環宇
芯系天下