Ge Semiconductor Devices for Cryogenic Power Electronics - II
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Transcript of Ge Semiconductor Devices for Cryogenic Power Electronics - II
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Ge Semiconductor Devices
for
Cryogenic Power Electronics - II
WOLTE 5
Grenoble, June 2002
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R. R. Ward, W. J. Dawson, R. K. Kirschman
GPD Optoelectronics Corp., Salem, New Hampshire
O. Mueller
LTE–Low Temperature Electronics, Ballston Lake, New York
R. L. Patterson, J. E. Dickman
NASA Glenn Research Center, Cleveland, Ohio
A. Hammoud
Dynacs Corp., Cleveland, Ohio
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Cryogenic Power Electronics
• Semiconductor devices (diodes and transistors)
• For Power Management and Actuator Control
• For use down to 30 K (and lower)
• Supported by NASA Glenn Research Center
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ApplicationsSpace
• Solar-system exploration
– Reasons: Cold environment, reduced power
– For: Outer planets, cold satellites, interstellar
• Scientific spacecraft/observatories
– Reason: Cryogenic sensors and optics
– For: Motors and actuators
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ApplicationsDefense, Industry, Commercial
• Medical instruments (MRI)
• Electrical power (superconducting electrical power storage, transmission, distribution)
• Motors/generators (superconducting or cryogenic)
• Magnetic confinement (superconducting or cryogenic)
• High-power amplifiers (cell phone base stations, MRI)
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ApplicationsDefense, Industry, Commercial
• Medical instruments (MRI)
• Electrical power (superconducting electrical power storage, transmission, distribution)
• Motors/generators (superconducting or cryogenic)
• Magnetic confinement (superconducting or cryogenic)
• High-power amplifiers (cell phone base stations, MRI)
• Reasons: Improved efficiency and reliability, reduced size and mass; many systems already incorporate cryogenics
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ApplicationsSpace
• Solar-system exploration
– Reasons: Cold environment, reduced power
– For: Outer planets, cold satellites, interstellar
• Scientific spacecraft/observatories
– Reason: Cryogenic sensors and optics
– For: Motors and actuators
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Solar System Exploration
• Rovers, fly-by, orbiters, landers, probes, penetrators
• Cold environments - Heating
- Wake/sleep (where possible)
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Spacecraft
CONVENTIONAL
ELECTRONICS
HEATINGPOWER
TEMPERATURECONTROL
CRYOGENIC
ELECTRONICS
1 2
34
5
COLD ENVIRONMENT
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“Cold” Spacecraft
• Eliminate heating, thermal control, isolation
• Reduce power, weight, size, cost, complexity
• Improve overall reliability
• Reduce disruption of environment
• Increase mission duration & capability
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ApplicationsSpace
• Solar-system exploration
– Reasons: Cold environment, reduced power
– For: Outer planets, cold satellites, interstellar
• Scientific spacecraft/observatories
– Reason: Cryogenic sensors and optics
– For: Motors and actuators
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~30 K
NGST - Next Generation Space TelescopeNASA Goddard Design
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Why Ge Devices?
• Ea,d (Ge) < Ea,d (Si)
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Why Ge Devices?
• Ea,d (Ge) < Ea,d (Si) Lower T for Ge
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Why Ge Devices?
• Ea,d (Ge) < Ea,d (Si) Lower T for Ge
• Experience with Ge JFETs at cryogenic temperatures
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Why Ge Devices?
• Ea,d (Ge) < Ea,d (Si) Lower T for Ge
• Experience with Ge JFETs at cryogenic temperatures
• Ge has advantages over other semiconductor materials
Higher mobility than Si (especially at low temp)
– Lower p- n junction forward voltage than Si or III-Vs
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Mobility Comparison
Data from Madelung, 1991, pp. 18,34.
0
1 104
2 104
3 104
4 104
5 104
80 K 300 K
n-Sip-SiFn-Gep-Ge
np
p
p
p nn
n
Si
Si
Ge
Ge
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Why Ge Devices?
• Ea,d (Ge) < Ea,d (Si) Lower T for Ge
• Experience with Ge JFETs at cryogenic temperatures
• Ge has advantages over other semiconductor materials
– Higher mobility than Si (especially at low temp)
Lower p- n junction forward voltage than Si or III-Vs
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P-N Junction (Diode) Forward Voltage
0
0.5
1
1.5
0.2 A1 A
2 A4 A
0 40 80 120 160 200 240 280 320
Vf vs T Temperature (K)
Ge
Si
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Why Ge Devices ? (cont’d)
• Applications require operation to 30 - 40 K range
• Ge devices of all types can operate to low cryogenic temperatures (~ 20 K or lower) Diodes can operate to deep cryogenic temperatures
– JFETs can operate to deep cryogenic temperatures (down to few K)
– Bipolar transistors can operate to deep cryogenic temperatures
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Results – 15-A Ge Diode
0 0.2 0.4 0.6 0.8 1
R7u 4/100/80
R10d 4/100/80
N5u
N6d
M2u
M5d
VH-VL up
VH-VL down
K7d
K10u
VH-VL up
VH-VL down
H13u
H14d0
1
2
3
4
Voltage (V)
77 KRT
40 K 20 K
4 K
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Results – 15-A Ge Diode
-0.02
-0.01
0
Irev 2(A) downIrev3 (A) upIrev3 (A) upIrev5 (A) downIrev3 (A) downIrev4 (A) upIrev4 (A) downIrev5 (A) upIrev2 (A) upIrev3 (A) down
-100 -80 -60 -40 -20 0
Voltage (V)
4 K
40 K
20 K
77 K
300 K
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Results – 60-A Ge Diode
0 0.2 0.4 0.6 0.8 1
R2uR3dN10uN11dM12uM13dK18uK19dH21uH21uH22dH23u
0
1
2
3
4
Voltage (V)
77 KRT
40 K
20 K 4 K
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Results – 60-A Ge Diode
-0.02
-0.01
0
Rrev4u (A)Rrev5d (A)Rrev6u (A)Rrev7d (A)Nrev8u (A)Nrev9d (A)Mrev14u (A) Mrev15d (A)Krev16u (A)Krev17d (A)Hrev24u (A)Hrev25d (A)
-100 -80 -60 -40 -20 0
Voltage (V)
4 K
40 K
20 K
77 K
300 K
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Why Ge Devices? (cont’d)
• Applications require operation to 30 - 40 K range
• Ge devices of all types can operate to low cryogenic temperatures (~ 20 K or lower)– Diodes can operate to deep cryogenic temperatures
JFETs can operate to deep cryogenic temperatures (down to few K)
– Bipolar transistors can operate to deep cryogenic temperatures
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Field-Effect Transistor Comparison
0
0.5
1
1.5
2
2.5
3
3.5
0 50 100 150 200 250 300
Temperature, T (K)
Si JFET (U310)
Ge JFET
Si JFET (2N4416)
I (300)dss
dss
I (T)
GaAs MESFET (3SK121)
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Low-Power Ge JFET at 4 K
0
20
40
60
80
0 5 10 15 20 25 30 35 40
Vgs = 0 V
Vgs step = 1 V
Drain-source voltage, Vds (V)
Vgs = -5.0 V
Ge JFET A71G4 K
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Why Ge Devices? (cont’d)
• Applications require operation to 30 - 40 K range
• Ge devices of all types can operate to low cryogenic temperatures (~ 20 K or lower)– Diodes can operate to deep cryogenic temperatures
– JFETs can operate to deep cryogenic temperatures (down to few K)
Bipolar transistors can operate to deep cryogenic temperatures (down to ~20 K or lower)
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Ge Bipolar Junction Transistor
Zero: upper right Horiz: 0.5 V/div Vert: 1 mA/divIB: 0.02 mA/step at RT, 0.1 mA/step at 4 K
300 K 4 K
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Ge Bipolar Junction Transistor
-100
-80
-60
-40
-20
0-2-1.5-1-0.50
IB = -0.5 mA
2N964-3-1229A,B,C
Collector-emitter voltage, V (V)CE
IB = -2.5 mA
IB = 0
20 K
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Bipolar Junction Transistor Comparison
1
10
100
1000
01020304050
Temperature -1 (1000/K)
SiGe
20 30 50 80 300120
Temperature (K)
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Ge MIS Structures
Au/Cr electrode
Si3N4
SiO2
Ge substrate
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0
0.1
0.2
0.3
-20 -10 0 10 20
R2upR2dnN2upN2dnM2upM2dnJ1upJ1dnG1upG1dnE1up (nF)E1dn
Voltage (V)
WA-5
7.9 K
300 K
8.6 K
10 K
77 K
Results – Ge MIS Structures
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Summary
• Cryogenic power electronics is needed
for spacecraft going to cold environments
and for space observatories
• Temperatures may be as low as 30 - 40 K
• We have characterized Ge devices – diodes,
JFETs, and bipolars – at cryogenic temperatures
• Ge devices can operate to deep cryogenic
temperatures – to 20 K and as low as 4 K
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Plans
• Continue to evaluate and characterize Ge
devices at cryogenic temperatures
• Determine necessary design features for
cryogenic power devices – for 30 K and lower
• Develop related infrastructure– Fixturing and instrumentation for evaluation
– Packaging and interconnections
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Plans (cont’d)
• Design, fabricate and evaluate Ge power devices for cryogenic operation
– Demonstrate Ge MOSFETs
– Develop Ge cryogenic power devices: diodes, BJTs, JFETs, MOSFETs, IGBTs
– Improve device characteristics (reverse breakdown voltage, for example)
• Evaluate performance in power circuits.
• Investigate SiGe devices for cryogenic power applications
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Results – Ge MIS Structures
0
0.1
0.2
0.3
0.4
0.5
-20 -15 -10 -5 0 5 10 15 20
R11 up
R11 dn
77a up
77a dn
10a up
10a dn
1476a up
1476a dn
14795a up
14795a dn
1504a up
1504a dnVoltage (V)
E-03
7.5 K
300 K
8.2 K
10 K
77 K
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Reliability
• Processes involving thermal energy
effectively absent– Electromigration
– Corrosion
– Interdiffusion
• Remaining reliability issues– Thermal expansion differences
– Charge trapping/freeze-out
– Reduce by materials selection, device design, operating conditions