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Corporate presentation 2013-06-06

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GaN has emerged as the technology of choice for power conversion in green transport applications Geoff Haynes Vice President Business Development

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Why are GaN transistors important ?

Power Supply with Silicon Same PSU with GaN switches

Customers get improved power designs

• More efficient (cuts losses 50-90%)

• Smaller (1/4 the size per Watt)

• Lighter (1/4 the weight per Watt)

• Lower system BOM cost

Major transportation applications • Traction Drive Inverter • On-board Battery Charger • DC-DC Conversion • 300V and 48V electronic systems

Better performance vs silicon

GaN Systems transistor on TO-220 silicon transistor

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• True Enhancement-Mode - Normally Off • Industry’s highest current ratings • 45x better FOM than 650V MOSFETs or IGBTs • 15x better FOM than 100V MOSFETs • +10V Gate tolerance – uses MOSFET drivers • Drive Assist™ on high-current devices • GaNPX™ packaging for ultra-low inductance

Switches to fit all applications

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GaN - an inherently low cost, high volume technology

Si substrate

GaN Al GaN

S D G

2DEG

P

E-HEMT

• Simple structure • Normally off operation • Majority carriers in channel for speed & low specific on-resistance • No diffusions to create reverse conduction • No forward voltage saturation

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GaN e-Mode Reverse Conduction Advantage

• Reverse conduction is an intrinsic operation of a GaN e-Mode – no Fast Recovery Diodes are required

• There are no diffusions so there is zero Qrr

• When the GaN e-Mode active switch mode is used, as shown, very low losses are achieved because the ‘diode like’ offsets are eliminated

GaN e-Mode forward & reverse conduction

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600/650V Device Comparison

1. GaN e-Mode FOM is:

• 3 - 4 times better than Cascode • 25 - 30 times better than MOSFET • 40 - 50 times better than FRD/IGBT

2. GaN e-Mode Hard Switching FOM is:

• 2 - 3 times better than Cascode • 20 - 30 times better than MOSFET • 30 - 40 times better than FRD/IGBT

3. GaN e-Mode has no diode charge storage losses!

Parameter

GaN e-Mode

GaN Cascode Si MOSFET Si/FRD IGBT

FOM: QG·Ron (nC·mΩ) 375 1,400 10,000 17,000

FOMHS:(QGD+QGS2)·Ron (nC·mΩ) 185 550 4,400 7,300

QRR DIODE (400A) (nC) 0 2,000 190,000 6,000

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• Full bridge total power loss using GaN @100kHz: • 9x better than CoolMOS • 7x better than IGBT • 2x better than SiC

• Full bridge total power loss using GaN

@1MHz • 3x better than SiC • Not possible with IGBT or CoolMOS

Inverter system: 2 kVA, 400VDC input, 240V/8.3A 60Hz output, p.f. = 0.9

Heatsink temperature THS,max = 60C

TO-220/TO-247 Package: Thermal insulation material Rth_TIM ~=1°C/W

GaN EHEMT: 4-layer FR4 PCB bottom side cooling using thermal vias: Rth_PCB ~= 5°C/W

More efficient, smaller & lighter

Power losses are simulated using Pspice model or calculated using datasheet parameters

GaN

SiC

Silicon

• GaN shows lower power loss over all switching frequencies

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GS66508T Simple drive requirements using standard parts

Gate driver design (Si8261BAC + Bootstrap)

SI8261BAC

MIC5205YM5

BOOTSTRAP

RON=10-20Ω

7V+ 12V

CBOOT

0.22uF

DBOOT

ROFF=2Ω

PWM IN

DGS (clamping diode)

.

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GS66508T Switching and gate driver test

GS66508T DPT Switching Test VDS

IL

VGS_L

400V

30A

• Gate Driver: • Si8610 + UCC27511 • Isolated gate drive supply • RON = 10Ω / ROFF = 2Ω

• Tested up to 400V/35A hard switching

35A

D

S

D

S

VSW

QH

GS66508T

VIN+

HS Gate

Driver

LS Gate

Driver

G

GQL

GS66508T

VIN-

VOUT

VDS

IL

VGS_L

VGS_H

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GS66508T Switching and gate driver test

Double Pulse Test

Turn-on (400V/30A) Turn-off (400V/35A)

VDS

IL

VGS_L

Tfall = 7.3ns 55V/ns

Trise = 4.6ns ~90V/ns

VPK = 428V

• Gate driver UCC27511: RON = 10Ω / ROFF = 2Ω • Top-side cooled package makes the tight layout possible: Low drain voltage overshoot • Clean gate waveform

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100 V E-HEMT vs 100 V OptiMOS - Faster switching & no reverse charge

36 V to 12 V buck converter power loss comparison

Symmetric • Same device on high/low sides • GaN EHEMT:

• GS61008P V2 (100V,7.4mΩ) • Si MOSFET:

• BSC070N10NS5 (100V,7mΩ)

GaN

Silicon

• GaN shows overall better efficiency & lower power loss

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E-HEMT vs OptiMOS - Faster switching & no reverse charge

Power Loss Breakdown

TJ = 39°C TJ = 39°C

TJ = 75°C

TJ = 36°C

• GaN: GS61008P (100V, 7.4mΩ)

• OptiMOS: BSC070N10NS5 (100V, 7mΩ)

• IOUT = 10A, POUT = 120W

• Case-Ambient (PCB) Thermal resistance Rth,C-A = 20°C/W

• High Side: GaN has lower switching loss and zero reverse recovery loss

• Low Side: GaN has higher dead time conduction loss

• GaN shows lower total power loss & lower junction temperature TJ

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Island Technology® road map - High current structures

Island Technology® enables commercialization of higher current GaN switches

• High yields • High currents

• 100 V – 250 A • 650 V – 200 A

• High speeds

• Low costs

• Low inductance packaging Isolated island structure

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650 V 60 A switch in top-side cooled GaNPX™ pack

• 8.95 mm x 7.59mm x 0.5mm

• Reduced thermal resistance

• Shorter vias to improve Rds(on) & Inductance

• Dual Gate connections to optimise layout for high switching frequency

• Available now

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GaN challenges Si & SiC for electric vehicle traction systems

Blocking Voltage 600/650 V

Blocking Voltage 900V

• 650 V & 900 V devices are required by 2 level inverters

• IGBT devices are currently used

• Both SiC & GaN are regarded as potential replacements

• A 3 level inverter using 650V GaN switches, offers the best choice for 900V operation. Higher FOMSW & lower switched voltage increase efficiency

• SiC MOSFETs are more expensive & are more difficult to protect & drive

• IGBTs are too inefficient T. Kachi, et al “GaN Power device and Reliability for Automotive Applications” Reliability physics Symposium (iRPS) 2012.J.

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• Addition of 48 V power system in new vehicles is reducing wiring harness current, weight & voltage drop

• The GS61040 250 A, 100 V, 2.4 mΩ high speed E-GaN switch enables: • Higher efficiency • Air cooling • Lower component count • Smaller passive components

100V, 250 Amp switch ideal for 12 V 48 V conversion

Immunity to single event failure

• Single event cosmic radiation causes failure in Si power systems A single particle impact while switching can destroy an IGBT Significant voltage de-rating of IGBTs is needed to maintain reliability

• GaN E-HEMTs do not suffer from this effect E-HEMT majority carrier channel is intrinsically radiation-resistant 2014 IEEE paper by Leif Scheick, NASA Confirmed E-HEMT radiation immunity in power circuits

• Testing of GaN Systems devices is underway High dose with devices energized - 800 MeV protons, 0.3 x 1014 protons/cm2 Initial results – devices unaffected

• What does this mean in practice? Increased reliability No need for de-rating in critical applications

IGBT radiation de-rating curve at sea level

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DRS Technologies - 2 kW vehicle power inverter

• 94% Efficient

• 28 Volt DC

• 3 phase 120 Volt AC

• Passive cooling

• Reduced part count

• Uses GaN Systems GS66508P

Production Systems

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• 2 kWh solar charged battery solution

• Air shippable – no class 9 restrictions

• 98% peak charger efficiency

• Buck-boost switching 600W at 400 kHz

• Uses 4pc GaN Systems GS61008P

Virideon - Blue Sky Mast

TPS-2C tactical power system

Production Systems

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NEXTHOME consortium - Bi directional converter

• 3 k Watt

• 800 Volt link voltage

• 2 MHz switching fq.

• 98% efficiency

• Passive cooling

Production Systems

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Where are GaN transistors important ?

Power Supply with Silicon Same PSU with GaN switches

Customers get improved power designs

• More efficient (cuts losses 50-90%)

• Smaller (1/4 the size per Watt)

• Lighter (1/4 the weight per Watt)

• Lower system BOM & operating cost

In all power conversion applications from 100 Watts to 100,000 Watts with operating voltages to 900V

Better performance vs silicon

GaN Systems transistor on TO-220 silicon transistor

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