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G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
14th International Workshop on Room Temperature Semiconductor Detectors and Associated Electronics“, 19-22 October 2004, Rome, Italy.
Challenges in the Design of Challenges in the Design of Front-End ElectronicsFront-End Electronics
for Semiconductor Radiation Detectorsfor Semiconductor Radiation Detectors
Department of Electronics Engineering and Information Science
Milano - Italy
Giuseppe Bertuccio
Politecnico di Milano and INFN
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
The Front-End Electronics is made for a detector
Introduction
The design challenges start from the detector
Silicon Carbide Detectors
…a step forward for Front-end Electronic Design
(useful also for other detectors…)
A stimulating case…
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
Leakage Current DensityState of the art detectors
Si / GaAs1 nA/cm2
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
Leakage Current DensityState of the art detectors
1000 SiC1 pA/cm2
Si / GaAs1 nA/cm2
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
Leakage Current DensityState of the art detectors
Si / GaAs1 nA/cm2
SiC1 pA/cm2
1000
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
SiC pixel detector: from 27 °C to 100°C
43 e- r.m.s. @ 100 °C
17 e- r.m.s. @ 27 °C
Front-End limited
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
SiC Pixel Detectors
SiC Pad detectors : JSiC = 1 – 10 pA/cm2
Current of a pixel ?
VBIAS=0V; I = 0 ± 0.1 fA
IREV = 1.6 fA - 16 fA !IREV = 1.6 fA - 16 fA !Area = 400 x 400 m2
4x4 Prototype
SiC pixel
400 x 400 m2
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
Pixel Leakage Current
SiC Pad detectors : JSiC = 1 – 10 pA/cm2
Current of a pixel ?
VBIAS=200V; I = 3.16 ± 0.3 fA
VBIAS=0V; I = 0 ± 0.1 fA
IREV = 2 fA - 16 fA !IREV = 2 fA - 16 fA !Area = 400 x 400 m2
4x4 Prototype
SiC pixel
400 x 400 m2
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
June 2004 : Reverse Current Map
Leakage Current @ 27 °C
I = 274 fA : 1 pixel
I = 98 fA : 1 pixel
I = 36 fA : 1 pixel
I < 10 fA : 12 pixels
Leakage Current @ 27 °C
I = 274 fA : 1 pixel
I = 98 fA : 1 pixel
I = 36 fA : 1 pixel
I < 10 fA : 12 pixels
Leakage Current E.N.C. @ 27 °C @ 10s
I = 274 fA : 1 pixel = 5.8 e-
I = 98 fA : 1 pixel = 3.5 e-
I = 36 fA : 1 pixel = 2 e-
I < 10 fA :12 pixels < 1 e- r.m.s.
Leakage Current E.N.C. @ 27 °C @ 10s
I = 274 fA : 1 pixel = 5.8 e-
I = 98 fA : 1 pixel = 3.5 e-
I = 36 fA : 1 pixel = 2 e-
I < 10 fA :12 pixels < 1 e- r.m.s.
SiC pixel
A Room Temperature
Sub-electron noise
Semiconductor Detector
SiC pixel
A Room Temperature
Sub-electron noise
Semiconductor Detector
I < 10fA : 12 pixels10 fA
I < 10fA : 12 pixels < 1 e- r.m.s.
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
Is it realistic to think to a sub-electron noise room temperature Front-End Electronics ?
Is it possible sub-e-noise in standard CMOS Technology ?
If not, what is the ultimate noise limit ? 1, 2 , 5… electrons r.m.s. ?
What does set the noise limit in CMOS ? 1/f or others ?
What is the power level required to achieve the ultimate noise ?
Is this power compatible with a thousand channels pixel detectoror it is reasonable only for few channels detectors ?
Some questions…
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
Design toward sub-electron noise FE…
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
22/1
22wpfwsTransistorInput ENCENCENCENC 22
/122
wpfwsTransistorInput ENCENCENCENC
122
TransistorInputtot ENCENC 122
TransistorInputtot ENCENC
E. Gatti, V. Radeka, P.F. Manfredi, M. Sampietro, V. Re,
A. Pullia, P. O’Connor, G. De Geronimo, G. Bertuccio …
Front End Noise
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
outline
• The classical theory and its limits
• 1/f noise : models and experiments
• Optimisation of ENC1/f
• Ultimate limit of ENC1/f
1 / f Noise
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
ENC 1/f: the classical theory
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Assumptions
- Sv is independent by I
- Sv scales with (WL)-1
Are these assumptions always true ?Are these assumptions always true ?
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Matching
Capacitive
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LWCC
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2'
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
SV: Experimental data
PMOS 30/2 ( AMS 0.35 m )
10 A
1/f
30 A
100 A
300 A
HznVSV 50
SV/SV ~ 100 % !
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G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
Models of 1/f noise
Hooge model :
McWhorter modelN
Unified - correlated modelN -
vNI vNI N : carriers numbers
v : carrier velocity
Hooge model :
McWhorter modelN
Unified - correlated modelN -
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
: Hooge model
- Empirical model
- Proposed by Hooge in 1969 to explain 1/f noise in
homogeneous semiconductors (resistors)
fI
Ndf
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I
122
fI
Ndf
idS H
I
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1/f origin: fluctuations due to phonon scattering
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
: McWhorter model
- Based on a model proposed by McWhorter in 1957
- Fluctuation of number of free carriers
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SiO2
1/f origin in MOSFET
N due to charge trapping / detrapping in SiO2
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
SI vs. model
Ohmic
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G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
What the experiments say…
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
p –MOSFET 10/10 (Lmin= 90 nm)
Subthreshold SI I 2
Valenza et al.
IEE 2004
vs. modelsSubthreshold
2
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G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
vs. modelsSaturation
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TGS VV
Saturation SI (VGS - VT)3
(Hooge) model (Hooge) model
p –MOSFET 10/10 (Lmin= 90 nm)
Valenza et al.
IEE 2004
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
vs. : experimental
PMOS NMOS
ST Microelectronics 0.13 m CMOS
Marin et al. - IEE 2004
I
N - McWhorter model
ILfC
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saturation
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
bias region Hooge – McWhorter
SUBTHRESHOLD -- PMOS & NMOS
OHMIC PMOS NMOS
SATURATION PMOS NMOS
vs. model
PMOS : deeper channel → bulk effect →
NMOS: interface channel → trapping effects → N
PMOS : deeper channel → bulk effect →
NMOS: interface channel → trapping effects → N
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
Implication for Front-end designs…
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
vs. ENC optimisationSaturation
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G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
Design for N-1/f MOSFET’s…
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
ENC1/f : model: Saturation
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NTkqS
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TSATV
11
2 2'
2
)(
fLWC
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TSATV
11
2 2'
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GIL
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2'
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LWC
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GIL
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2'
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2)(/1
• independent by I
• same for equal area WL
• minimum for CG = CIL
• independent by I
• same for equal area WL
• minimum for CG = CIL
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
pFCENC
JK
ILf
F
14
104
/1
25
pFCENC
JK
ILf
F
4.4
104
/1
26
Ultimate limit of ENC1/f
ILF
Nf Cq
KAENC 2
)(/1
2min
ILF
Nf Cq
KAENC 2
)(/1
2min
1
50 fF
3 e-
0.5 pF
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
Design for - 1/f MOSFET’s…
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
ILWC
LLWCC
q
AENC
ox
GILHNf
3'
2'2
)(/12
I
LWC
LLWCC
q
AENC
ox
GILHNf
3'
2'2
)(/12
model: ENC1/f
2'0min 2 thox Vn
L
WCII
2'
0min 2 thox VnL
WCII
G
GILNf C
CCENC
2
)(/1
G
GILNf C
CCENC
2
)(/1
minimum for CG = CILminimum for CG = CIL
3
2
)(/1
G
GILNf
C
CCENC
3
2
)(/1
G
GILNf
C
CCENC
minimum for CG = 3 CILminimum for CG = 3 CIL
minimum current (within saturation) minimum current (within saturation)
II II
constant current constant current
In contrastwith series white noise
minimisationI
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
ILWC
LLWCC
q
AENC
ox
GILHf
3'
2'22
)(/12
ILWC
LLWCC
q
AENC
ox
GILHf
3'
2'22
)(/12
IW
LLWCCA
Cq
kTENC GIL
ox
SATws
1
2
42'
1
'
2)(
IW
LLWCCA
Cq
kTENC GIL
ox
SATws
1
2
42'
1
'
2)(
ENC optimisation
1/f
White
I
I
1
ENC2
I
1/fws
Iopt
CG1/fws
COPT1/3CIL 3CIL
CG = 3 CILCG = 3 CIL
CG = CIL/3CG = CIL/3
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
ENC optimisation
101
102
103
10-6
10-4
10-22
4
6
8
10
12
Current [A] Gate width W [m]
EN
C [
elec
tron
s r.
m.s
. ]
CIL =0.3 pF
= 10 s
PMOS AMS 0.35 m
H=4.6 10-5
CIL =0.3 pF
= 10 s
PMOS AMS 0.35 m
H=4.6 10-5
Iopt = 14 A
Wopt = 183 m
ENCmin = 2.8 e- r.m.s.
Iopt = 14 A
Wopt = 183 m
ENCmin = 2.8 e- r.m.s.
14 A183
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
Summary - Conclusions• RT detectors with sub-electron noise (SiC)
• Ultimate limit of CMOS Front End
• 1/f noise models revised McWhorter model limits
Hooge & unified models
Bias dependent 1/f noise
Bias Current / Geometry MOSFET optimisation
• ENC1/f : 1 - 3 e- r.m.s. at RT for CIL 50-500fF
• ENCtot = 3 e- r.m.s. (CIL = 0.3pF ) experimental data based
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
Acknowlegments
Andena Marco
Caccia Stefano
Maiocchi Diego
Mallardi Enzo
Masci Sergio
Olivieri Gianluigi
Thanks to:
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
Foxox
FV Kt
fLWC
KS
1' Fox
ox
FV Kt
fLWC
KS
1'
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
Sub-electron noise Front End :is it interesting ?
Intrinsic detector noise
SiGaAsCdTeSiC
6
4
1 keV30 60 eV
1
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
Parallel noise:MOSFET Gate leakage
1 nA
90 nm Technology
tox = 1.5 nmPMOS 0.3/10
IG
100 nA
ID
Valenza et al. IEE 2004
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
ID= 20 A ID = 5 mA
AMS CMOS 0.35 m
PMOS 300/0.4
AMS CMOS 0.35 mtox = 7.6 nm
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
101
102
103
10-6
10-4
10-2
0
2
4
6
8
10
12
1/f ENC component
Current [A] Gate width W [m]
EN
C [
elec
tron
s r.
m.s
. ]
CIL =0.3 pF
= 10 s
PMOS AMS 0.35 m
H=4.6 10-5
CIL =0.3 pF
= 10 s
PMOS AMS 0.35 m
H=4.6 10-5
Iopt = 1 A
Wopt = 570 m
ENCmin = 1.4 e- r.m.s.
Iopt = 1 A
Wopt = 570 m
ENCmin = 1.4 e- r.m.s.
1 A
570
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
101
102
103
10-6
10-4
10-2
1
2
3
4
White series
Current [A] Gate width W [m]
EN
C [
elec
tron
s r.
m.s
. ]
CIL =0.3 pF
= 10 s
PMOS AMS 0.35 m
H=4.6 10-5
CIL =0.3 pF
= 10 s
PMOS AMS 0.35 m
H=4.6 10-5
Iopt = 10 mA
Wopt = 60 m
ENCmin = 0.8 e- r.m.s.
Iopt = 10 mA
Wopt = 60 m
ENCmin = 0.8 e- r.m.s.
10 mA
60
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
Unified model : correlated - Proposed by Mikoshiba in 1982, developed in 1987-91
- Trapping (N) & mobility () fluctuations correlation
SiSiO2
SiSiO2
-±
ttt
NNN
N
NI
I
11
ttt
NNN
N
NI
I
11
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
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Magnitude N & sc determines N or dominance
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1
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LWf
IkTL
NNC
NNBNN
NNA
CLfa
IqkTS
L
LLd
LLLox
effdI
Unified model : correlated
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
120 eVFWHM
55Fe
10.9 e- r.m.s.
NIM A361 (1995)
Floating gate amplifier - multiple non destructive readingsT = - 110 °CProcessing time 160 s = ( 16 readings ) x 10 s
Floating gate amplifier - multiple non destructive readingsT = - 110 °CProcessing time 160 s = ( 16 readings ) x 10 s
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
SiC propertiesWide Bandgap
EG=3.2 eV
High saturation velocity
vS = 200 m/ns
High Critical Field
EC = 2 MV/cmHigh thermal conductivity
SiC Si
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
PMOS
4
33
20)10(minAI
pFCsENC IL
ws
4
33
20)10(minAI
pFCsENC IL
ws
3.5 e -
6.5 e -
1pF
AMS PMOS:
Lmin= 0.35m ; =126 cm2/Vs ; A1=1
AMS PMOS:
Lmin= 0.35m ; =126 cm2/Vs ; A1=1
1
G. Bertuccio “Challenges in the Design of Front-End Electronics for Semiconductor Radiation Detectors ” 14th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray detectors, October 18-21 , Rome.
W/L = 2000/0.5 ( STM 0.18 m process)
ID: 0.25 - 0.5 - 1 mA
PMOS
ID: 0.25 - 0.5 - 1 mA
NMOS
ENC 1/f : experimental
from Manghisoni et al., IEEE TNS 2002
HznV13