..f,/s >-/j/s< ;,,'> 97 I ZnSe AND RELATED TERNARY ...€¦ · ..f,/s >-/j/s< ;,,'>_ 97 _I 206116...

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..f,/s >-/j/s< ;,,'>_ 97 _I 206116 CRYSTAL GROWTH OF ZnSe AND RELATED TERNARY COMPOUND SEMICONDUCTORS BY PHYSICAL VAPOR TRANSPORT i" Contract Number: NAS8-39718 Final Report Principal Investigator: Dr. Ching-Hua Su National Aeronautics and Space Administration (Formerly Universities Space Research Association) Submitted to: THE GEORGE C. MARSHALL SPACE FLIGHT CENTER MARSHALL SPACE FLIGHT CENTER HUNTSVILLE, ALABAMA 35812 By: UNIVERSITIES SPACE RESEARCH ASSOCIATION 4950 CORPORATE DRIVE, SUITE 100 HUNTSVILLE, AL 35806 October 31, 1997 https://ntrs.nasa.gov/search.jsp?R=19980000060 2020-06-22T12:40:27+00:00Z

Transcript of ..f,/s >-/j/s< ;,,'> 97 I ZnSe AND RELATED TERNARY ...€¦ · ..f,/s >-/j/s< ;,,'>_ 97 _I 206116...

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..f,/s >-/j/s< ;,,'>_ 97 _I 206116

CRYSTAL GROWTH OF ZnSe AND RELATED TERNARYCOMPOUND SEMICONDUCTORS

BY PHYSICAL VAPOR TRANSPORT

i"

Contract Number:

NAS8-39718

Final Report

Principal Investigator:

Dr. Ching-Hua SuNational Aeronautics and Space Administration

(Formerly Universities Space Research Association)

Submitted to:

THE GEORGE C. MARSHALL SPACE FLIGHT CENTER

MARSHALL SPACE FLIGHT CENTER

HUNTSVILLE, ALABAMA 35812

By:

UNIVERSITIES SPACE RESEARCH ASSOCIATION

4950 CORPORATE DRIVE, SUITE 100

HUNTSVILLE, AL 35806

October 31, 1997

https://ntrs.nasa.gov/search.jsp?R=19980000060 2020-06-22T12:40:27+00:00Z

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FINAL REPORTCRYSTAL GROWTHOFZnSeAND RELATED TERNARY COMPOUND

SEMICONDUCTORSBY PHYSICALVAPOR TRANSPORT

CONTRACTNAS8-39718

March 1,1993to September30, 1997

Purpose and Scope of the Research:

The task was a joint collaboration including scientists from the Universities SpaceResearch Association (USRA), NASA/Marshall Space Flight Center (MSFC) working

in the Space Sciences Laboratory, and in the laboratories of Marquette UniversityMaterials Science and Metallurgy Program, and Hughes Santa Barbara Research Center.Other contributors included the Center for Photonic Materials and Devices, Department

of Physics, Fisk University and the Department of Materials Science and Engineering,State University of New York at Stony Brook.

The task included investigating ZnSe and related ternary semiconducting alloys, e.g.,

ZnS_Sevx, ZnTe_Sev_, and ZnvxCd_Se. These materials are useful for opto-electronicapplications, such as high efficient light-emitting diodes and low power threshold andhigh temperature lasers in the blue-green region of the visible spectrum. Given therecent demonstration of its optical bi-stable properties, ZnSe is also a possible candidate

material for digital optical computers.

The investigation consisted of extensive ground-based studies, preparing for a flight

experiment. This investigation included both experimental and theoretical efforts. Taskobjectives were: (1) to characterize ground-based crystal growth as a basis forcomparative analysis of crystals grown in gg; and (2) obtain experimental data andperform analyses required to define optimum parameters for flight experiments.

Phase I

The first six months of this study, the Preliminary Definition Phase (Phase I), was

concentrated on the binary compound ZnSe:

(a) purification of starting materials of Se by zone refining;(b) synthesis of ZnSe starting materials;(c) heat treatments of these starting materials;(d) vapor transport rate measurements;(e) vapor partial pressure measurements of ZnSe;(0 crystal growth of ZnSe by physical vapor transport(g) various characterizations on the grown ZnSe crystals.

2

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In this investigation,ground-basedstudieswereperformedof thecrystalgrowthofZnSeby physicalvaportransportin closedampoulesin preparationfor flightexperimentsin low gravity condition. Thefollowing arethespecifictasksresultingfrom theground-basedstudies:

(a) Establishedquantitativecorrelationsbetweengrowthparameters,growthinterfaceshapes,compositionalredistribution,densitiesanddistributionsofdislocations,impurities,low anglegrainboundaries,secondphaseinclusions,andotherstructuralpropertiesof thecrystalsgrownby physicalvaportransport.

(b) Evaluated the contribution of gravitationally driven convection in the growth

process by performing experiments under various vapor transportorientations relative to the gravitational direction (i.e., horizontal, vertically

stabilized, and destabilized configurations).

(c) Developed a two-dimensional model for delineating the effects of masstransport and heat transfer on the distribution of alloy composition, structuraldefects (dislocation), impurities, and the solid-vapor interface shapes duringthe physical vapor transport process in order to establish a fundamentalunderstanding of the crystal growth process.

(d) Established the partial pressure 3-phase curves of the vapor species in thissystem by measuring the optical absorption of the vapor phase coexistingwith the condensed phases.

(e) Evaluated the fundamentals of the current vapor transport theories by

performing measurements of the partial pressures of the individual speciesand the vapor transport rates on the same ampoules.

(0 Performed opto-electric characterization on the crystals and, thus,established the correlations between the electrical and optical characteristics

of the grown crystals and the processing parameters.

(g) Evaluated the potential benefits of microgravity processing for deviceapplications by fabricating devices from ground-grown crystals.

Starting Materials

The ZnSe starting material was synthesized in-house from ultra-high pure starting

elements, provided by commercial vendors. A zone refiner was used to purify the

starting element.

Vapor Partial Pressure Measurements

Using an optical absorption technique, the partial pressures over one ZnSe sample weremeasured between 980 ° and 1090°C. It was confirmed that the predominant vapor

species are Zn and Se2 and the congruently subliming composition is inside thehomogeneity range in this temperature range.

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Heat Treatment of Starting Materials

In the physical vapor transport process, the transport rate is at its maximum when thesource materials sublimes congruently, i.e., the vapor phase has the same compositionas the solid phase. Because vapor partial pressures coexisting with the solid phasedepend strongly on the small deviation from stoichiometry of the solid, it is almost

impossible to weigh out the amount of elements by reproduction to form the compoundsthat have certain values of partial pressures. One method to adjust the stoichiometry ofthe starting materials, which makes the samples sublime more congruently, is to bakeout the materials under dynamic vacuum condition. The change in stoichiometry stopswhen the materials sublime congruently. The other method is simply the distillation ofthe materials. The purpose of the heat treatment process, together with vapor partialpressure measurements, is to reproduce the same stoichiometry - as close to congruentsublimation as possible - for the source materials so that the transport rate is the highestand the same during each growth run.

All of the ZnSe starting material used in Phase I was from Cleveland Crystals, Inc., withpurity of either 99.995% or 99.999%. These materials were treated by either (a) beingbaked out at about 1080°C under dynamic vacuum condition for about 10 minutes, or

(b) being distilled by subliming the material from one end of the ampoule anddepositing it on the other end under dynamic vacuum condition.

Transport Rate Measurements

The transport rates of ZnSe materials under a temperature gradient were measured by adirect, in situ technique which gives the amounts of mass transported at different timeintervals. All the materials inside a transport ampoule were collected and loaded into an

optical cell and the stoichiometry of the materials were determined by partial pressuremeasurements at Marquette University.

Simultaneous measurements of partial pressures and transport rates were also

performed, establishing and confirming the theory of vapor transport rate in a closed

ampoule.

Crystal Growth Experiments

A three-zone growth furnace was used to produce a sharp thermal gradient whichresulted in a well-defined position for the supersaturated vapor phase and consequently,a well-defined solid vapor interface. Using this method, large single crystals of ZnSewere grown consistently. Growth experiments in seeded, unseeded, horizontal, and

vertical growth configuration were conducted.

Using the original three-zone fumace configuration resulted in growth interfaces forsome crystals being concave toward the solid. After analyzing the thermal environmentnear the interface, an adiabatic zone (2.5 to 5 cm thick) was inserted between the centralzone heater and the cold zone. This change resulted in an improvement of growthinterface.

4

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Characterization and Results

Samples were examined by optical, scanning electron, and atomic force microscopy.The growth orientations were determined by Laue X-ray diffraction. The facet surfaceof ZnSe-5 crystal was determined to be (110) planes and the growth direction of ZnSe-6was [331]. (Figures showing results of these and other tests were provided in the final

report for Phase I and are attached as Attachment 1.)

Fisk University performed Atomic Force Microscopy (AFM) and Differential ScanningCalorimetry (DSC). (Results shown in final report for Phase I.)

A (110) slab was cut almost parallel to the growth direction of the ZnSe-6 crystal andwas lapped and chemomechanically polished in 2% Br ethylene glycol solution. Thisslice was sent to State University of New York at Stony Brook for synchrotron radiation

analysis.

A part of the ZnSe-6 crystal was also sent to the Santa Barbara Research Center wherefor studying the technique to put on ohmic contact for the Hall measurement and to

perform cathodoluminescence measurement. A double-crystal diffractometer was setup in the laboratory and rocking curve diffractomy was performed.

Existing optical transmission and photoluminescence equipment were modified andmeasurement on ZnSe crystals were conducted.

Phase II

Phase II of the contract authorization to proceed was awarded 1 December 1993, and

contract performance start up was 6 January 1994. The Phase II tasks were acontinuation of the Phase I tasks with emphasis on the ternary systems, such as ZnSeS,ZnTeSe, and ZnCdSe. The primary objective of the ground-based investigation was to

obtain the experimental data and conduct analyses required to define the optimumgrowth parameters for upcoming flight experiments. Most of this objective wasaccomplished in Phase I for the binary systems. The Phase II work continued, addingthe ternary systems, processing data for analyses and refinement leading to a flight

experiment.

The proposed flight experiment was declined by NASA in early 1995 after a ScienceConcept Review on September 29, 1994. Activity on this contract was held to aminimal level after the contract was de-scoped in 1996, when Dr. Ching-Hua Su's

salary and related benefits were returned to NASA when he became a Civil Servant. Dr.Yi-Gao Sha continued the research for USRA. His research centered primarily on

theoretical calculations for mass flux and composition in ZnSe-based ternary physical

vapor transport systems and transport experiments.

Work on this contract was halted as of September 1997.

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Investigators:

Principal Investigator: Dr. Ching-Hua Su, (formerly USRA Visiting ScientistCrystal Growth & Solidification Physics BranchMicrogravity Science and Applications DivisionSpace Sciences Laboratory/ES75Marshall Space Flight Center, AL 35812Tel. (205) 544-7776Fax. (205) 544-8762

Co-Investigators:

Prof. Robert F. Brebrick

Materials Science & Metallurgy ProgramDepartment of Mechanical EngineeringMarquette UniversityMilwaukee, WI 53233Tel. (404) 288-1595

Dr. Martin Volz, Research ScientistSpace Sciences Laboratory/ES75Marshall Space Flight Center, AL 35812Tel. (205) 544-5078

Dr. Yi-Gao Sha, Visiting ScientistUniversities Space Research AssociationSpace Sciences Laboratory/ES75Marshall Space Flight Center, AL 35812Tel. (205) 544-7765

Dr. David Noever, Research Scientist

Space Sciences Laboratory/ES76Marshall Space Flight Center, AL 35812Tel. (205) 544-7783

Dr. Witold Palosz, Staff Scientist

Universities Space Research AssociationSpace Sciences Laboratory/ES75Marshall Space Flight Center, AL 35812Tel. (205) 544-1272

Dr. N. Ramachandran, Staff Scientist

Universities Space Research AssociationSpace Sciences Laboratory/ES75Marshall Space Flight Center, AL 35812Tel. (205) 544-8308

Industrial Guest Co-Investigators:

Drs. Sanghamitra Sen and Scott JohnsonMembers of Technical StaffSanta Barbara Research Center75 Coromar Drive

Goleta, CA 93117

Tel. (805) 562-2482, 562-2356

Dr. Michael DudleyAssoc. Prof. of Materials Science & Eng.Research Foundation of the State

University of New York (SUNY) at

Stony BrookNational Synchrotron Light SourceStony Brook, NY 11794-3366Tel. (516) 632-8500

Publications:

Ching-Hua Su, Yi-Gao Sha, M.P. Volz, D.C. Gillies, F.R. Szofran, S.L. Lehoczky, W.Zhou, M. Dudley, Hao-Chieh Liu, R.F. Brebrick, and J.C. Wang. Invited paper,"Ground-based Research of Crystal Growth of II-VI Compound Semiconductors byPhysical Vapor Transport," presented at the 84 Annual Symposium on MicrogravityScience and Space Processing, 32 "d AIAA Aerospace Science Meeting, Reno, Nevada,

January 10-13, 1994 (paper No. 94-0564 published in AIAA proceedings).

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K.T. Chen,M.A. George,Y. Zhang,A. Burger,Ching-HuaSu,Yi-GaoSha,D.C.Gillies, andS.L.Lehoczky,"SeleniumPrecipitatesin ZnSeCrystalsGrownby thePhysicalVaporTransport,"presentedat the 1994Marchmeetingof theAmericanPhysicalSociety,March21-25,Pittsburgh,Pennsylvania.

Yi-Gao Sha,Ching-HuaSu,W. Palosz,M.P. Volz, D.C. Gillies, F.R. Szofran,S.L.Lehoczky,Hao-ChiehLiu, andR.F.Brebrick,"MassFlux of ZnSeby PhysicalVaporTransport,"submittedto J.CrystalGrowth,June1994.

Kuo-TongChen,M.A. George,Y. Zhang,A. Burger,Ching-HuaSu,Yi-Gao Sha,D.C.Gillies, andS.L.Lehoczky,"SeleniumPrecipitationin ZnSeCrystalGrowthbyPhysicalVaporTransport,"submittedto J.of CrystalGrowth,July 1994.

Yi-Gao Sha,Ching-HuaSu,W. Palosz,M.P. Volz, D.C. Gillies, F.R.Szofran,S.L.Lehoczky,Hao-ChiehLiu, andR.F.Brebrick,"MassFlux andCrystalGrowthof ZnSeby PhysicalVaporTransport,"presentedatthe8thInternationalConferenceon VapourGrowthandEpitaxy (ICVGE-8),Freiburg,Germany,July24-29,1994.

Travel:

The various meetings/conferences noted above in publications.

3/23-4/2/94 Ching-Hua Su, Milwaukee, WI, to discuss selenium precipitates atMarquette University.

4/7-4/14/96 Yi-Gao Sha, Materials Research Society Meeting.

7/97 Meeting by Ching-Hua Su at Santa Barbara Research Center with Co-I,Dr. S. Sen, and her co-workers on the responsibility of the center infuture work.

Contract Administration Activities:

Base Contract: Period of Performance: February 22, 1993 - August 21, 1993Value: $89,873Funding: $89,873

Modification Number 1:Modification Number 2:

Modification Number 3:Modification Number 4:

Modification Number 5:

Modification Number 6Modification Number 7:

Modification Number 8:

No-cost extension through November 30, 1993Increased value by $419,600 to $509,473.Extendedthrough May 31, 1996. Additional funding of $50,127Additional funding of $210,000Revised NASA Form 1018 distribution instructions and

reporting periodDescope of requirements and decreased value by$145,480 from $509,473 to $363,993

Additional funding of $13,993. Fully fundedNo-cost period of performance extension toDecember 31, 1996

No-cost period of performance extension toSeptember 30, 1997

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Contract Completion:

Total Contract Value:Funded Value:Total Estimated Cumulative Costs:Estimated Total Costs at Physical Completion:

Physical Completion:

$363,993$363,993$358,126

$358,126100%

Physical completion of the Statement of Work was accomplished within existingfunding. Because of changes in approach and research pursuits, as well as the de-scopeof the statement of work, the reduced funding was adequate to complete the research ata lower total cost than initially proposed.

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Figure 19 Flow chart of characterization plan

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Figure 27Transmission Topogr al:_