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Transcript of FQP6N60
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7/30/2019 FQP6N60
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2000 Fairchild Semiconductor International
April 2000
Rev. A, April 2000
F Q
P 6 N 6 0
QFETQFETQFETQFET TMFQP6N60600V N-Channel MOSFET
General Descriptio n These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary,planar stripe, DMOS technology.
This advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are wellsuited for high efficiency switch mode power supply.
Features 6.2A, 600V, R DS(on) =1.5 @VGS =10 V Low gate charge ( typical 20 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability
Absolute Maximum Ratings TC =25C unless otherwise noted
Thermal Characteristics
Symbol Parameter FQP6N60 UnitsVDSS Drain-Source Voltage 600 VID Drain Current - Continuous (T C =25C) 6.2 A
- Continuous (T C =100C) 3.9 AIDM Drain Current - Pulsed (Note 1) 24.8 AVGSS Gate-Source Voltage 30 VEAS Single Pulsed Avalanche Energy (Note 2) 440 mJIAR Avalanche Current (Note 1) 6.2 AEAR Repetitive Avalanche Energy (Note 1) 13 mJdv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (T C =25C) 130 W- Derate above 25C 1.04 W/C
T J , TSTG Operating and Storage Temperature Range -55 to +150 C
TLMaximum lead temperature for soldering purposes,1/8 from case for 5 seconds
300 C
Symbol Parameter Typ Max UnitsR J C Thermal Resistance, J unction-to-Case -- 0.96 C WRCS Thermal Resistance, Case-to-Sink 0.5 -- C WR J A Thermal Resistance, J unction-to-Ambient -- 62.5 C W
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S
D
GTO-220
FQP Series
GSD
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2000 Fairchild Semiconductor International
F QP 6 N 6 0
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
Rev. A, April 2000
Electrical Characteristics TC =25C unless otherwise noted
Notes:1. Repetitive Rating : Pulse width limited by maximum junction temperature2. L =21mH, I AS =6.2A, V DD =50V, R G =25 , Starting T J =25C3. I SD 6.2A, di/dt 200A/ s, V DD BVDSS, Starting T J =25C4. Pulse Test : Pulse width 300 s, Duty cycle 2%5. Essentially independent of operating temperature
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristi csBVDSS Drain-Source Breakdown Voltage VGS =0 V, I D =250 A 600 -- -- VBVDSS/ T J
Breakdown Voltage TemperatureCoefficient
ID =250 A, Referenced to 25C -- 0.53 -- V/C
IDSSZero Gate Voltage Drain Current
VDS =600 V, V GS =0 V -- -- 10 AVDS =480 V, T C =125C -- -- 100 A
IGSSF Gate-Body Leakage Current, Forward VGS =30 V, V DS =0 V -- -- 100 nAIGSSR Gate-Body Leakage Current, Reverse VGS =-30 V, V DS =0 V -- -- -100 nA
On Characteristic sVGS(th) Gate Threshold Voltage VDS =V GS , ID =250 A 3.0 -- 5.0 VRDS(on) Static Drain-Source
On-Resistance
VGS =10 V, I D =3.1 A -- 1.2 1.5
gFS Forward Transconductance VDS =50 V, I D =3.1 A -- 6.0 -- S
Dynamic Characteristic sCiss Input Capacitance VDS =25 V, V GS =0 V,
f =1.0 MHz
-- 770 1000 pFCoss Output Capacitance -- 95 120 pFCrss Reverse Transfer Capacitance -- 10 13 pF
Switching Characteristicstd(on) Turn-On Delay Time VDD =300 V, I D =6.2 A,
RG =25
-- 20 50 nstr Turn-On Rise Time -- 70 150 nstd(off) Turn-Off Delay Time -- 40 90 nstf Turn-Off Fall Time -- 45 100 nsQg Total Gate Charge VDS =480 V, I D =6.2 A,
VGS =10 V
-- 20 25 nCQgs Gate-Source Charge -- 4.9 -- nCQgd Gate-Drain Charge -- 9.4 -- nC
Drain-Source Diode Characteristics and Maximum RatingsIS Maximum Continuous Drain-Source Diode Forward Current -- -- 6.2 AISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 24.8 AVSD Drain-Source Diode Forward Voltage VGS =0 V, I S =6.2 A -- -- 1.4 Vtrr Reverse Recovery Time VGS =0 V, I S =6.2 A,
dIF / dt =100 A/ s-- 290 -- ns
Qrr Reverse Recovery Charge -- 2.35 -- C
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2000 Fairchild Semiconductor International
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Rev. A, April 2000
0 3 6 9 12 15 18 210
2
4
6
8
10
12
VDS =300VVDS =120V
VDS =480V
Note : I D =6.2A
V G S , G
a t e -
S o u r c e
V o l t a g e
[ V ]
QG, Total Gate Charge [nC]10 -1 100 10 10
200
400
600
800
1000
1200
1400Ciss =Cgs +Cgd(Cds =shorted)Coss =Cds +CgdCrss =Cgd
Notes :1. VGS =0V2. f =1MHz
Crss
Coss
Ciss
C a p a c i t a n c e
[ p F ]
VDS, Drain-Source Voltage [V]
0.2 0.4 0.6 0.8 1.0 1.2 1.410 -1
100
101
25150
Notes :
1. V GS =0V2. 250 s PulseTest
I D R , R
e v e r s e
D r a i n
C u r r e n t
[ A ]
VSD , Source-Drain Voltage [V]
0 2 4 6 8 10 12 14 160
1
2
3
4
5
VGS =20V
VGS =10V
Note : T J =25
R D S ( O N )
[ ] ,
D r a i n -
S o u r c e
O n -
R e s
i s t a n c e
ID, Drain Current [A]
2 4 6 8 1010
-1
10 0
10 1
Notes :1. VDS =50V2. 250 s Pulse Test
-55
150
25
I D , D
r a i n C u r r e n t
[ A ]
VGS , Gate-Source Voltage [V]10 -1 10 0 10 1
10 -1
10 0
10 1
Notes :1. 250 s Pulse Test2. TC =25
VGS Top : 15V
10V8.0V7.0V6.5V6.0V
Bottom : 5.5V
I D , D
r a i n C u r r e n t
[ A ]
VDS , Drain-Source Voltage [V]
Typical Characteristics
Fi gur e 5. Cap ac it anc e Char ac ter is ti cs Figu re 6. Gate Ch ar ge Char ac ter is ti cs
Figure 3. On-Resistance Variation vs.Drain Curr ent and Gate Voltage
Figure 4. Body Diode Forward VoltageVariation vs. Source Current
and Temperatur e
Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics
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F QP 6 N 6 0
Rev. A, April 2000
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1
10 -2
10 -1
10 0
Note s :1. Z J C(t) = 0.96 / W M a x .2. Duty Fa ctor, D=t 1 /t 23. T J M - T C = P DM * Z J C(t)
s ingle pulse
D=0.5
0.02
0. 2
0.05
0. 1
0.01
Z
J C ( t
) , T h e r m a
l R e s p o n s e
t 1 , S q u a r e W a v e P u l s e D u r a ti o n [s e c ]
25 50 75 100 125 1500
1
2
3
4
5
6
7
I D , D
r a i n C u r r e n t
[ A ]
TC, Case Temperature [ ]10 0 101 102 10 3
10-1
100
101
102
DC
10 ms
1 ms
100 s
Operation in This Areais Limited by R DS(on)
Notes :
1. T C =25oC
2. T J =150oC
3. Single Pulse
I D , D
r a i n C u r r e n t
[ A ]
VDS, Drain-Source Voltage [V]
-100 -50 0 50 100 150 2000.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :1. V GS =10V2. I D =3.1A
R D S ( O N ) , (
N o r m a l
i z e d )
D r a i n -
S o u r c e
O n -
R e s i s
t a n c e
T J, J unction Temperature [oC]
-100 -50 0 50 100 150 2000.8
0.9
1.0
1.1
1.2
Notes :1. VGS=0V2. I D=250 A
B V D S S , (
N o r m a l
i z e d )
D r a i n - S
o u r c e
B r e a
k d o w n
V o l t a g e
T J, J unction Temperature [oC]
Typical Characteristics (Continued)
Figure 9. Maxim um Safe Operating Area Figure 10. Maximum Drai n Currentvs. Case Temperature
Figur e 7. Breakdow n Voltage Variationvs. Temperatur e
Figure 8. On-Resistance Variatio nvs. Temperatur e
Figur e 11. Transi ent Thermal Respons e Curve
t1
P DM
t2
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Rev. A, April 2000
Gate Charge Test Cir cuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductiv e Switching Test Circuit & Waveforms
Charge
VGS
10VQg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50K
200nF12V
Same Typeas DUT
Charge
VGS
10VQg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50K
200nF12V
Same Typeas DUT
VGS
VDS
10%
90%
td(on) tr
t on t off
td(off) tf
VDD
10V
VDSRL
DUT
RGVGS
VGS
VDS
10%
90%
td(on) tr
t on t off
td(off) tf
VDD
10V
VDSRL
DUT
RGVGS
EAS = L I AS2----21 --------------------
BVDSS - VDD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
L
I D
t p
EAS = L I AS2----21EAS = L I AS2----21----21 --------------------
BVDSS - VDD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
LL
I DI D
t p
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F QP 6 N 6 0
Rev. A, April 2000
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
DriverRG
Same Typeas DUT
VGS dv/dt controlled by R GI SD controlled by pulse period
VDD
LI SD
10VV
GS( Driver )
I SD( DUT )
VDS( DUT )
VDD
Body DiodeForward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D =
Gate Pulse Width
Gate Pulse Period--------------------------
DUT
VDS
+
_
DriverRG
Same Typeas DUT
VGS dv/dt controlled by R GI SD controlled by pulse period
VDD
LLI SD
10VV
GS( Driver )
I SD( DUT )
VDS( DUT )
VDD
Body DiodeForward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D =
Gate Pulse Width
Gate Pulse Period--------------------------
D =
Gate Pulse Width
Gate Pulse Period--------------------------
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7/30/2019 FQP6N60
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F Q
P 6 N 6 0
Rev. A, April 2000
Package Dimension s
4.50 0.209.90 0.20
1.52 0.10
0.80 0.102.40 0.20
10.00 0.20
1.27 0.10
3.60 0.10
(8.70)
2 . 8
0 0
. 1 0
1 5
. 9 0 0
. 2 0
1 0
. 0 8 0
. 3 0
1 8
. 9 5 M A X
.
( 1 . 7
0 )
( 3 . 7
0 )
( 3 . 0
0 )
( 1 . 4
6 )
( 1 . 0
0 )
( 4 5
)
9 . 2
0 0
. 2 0
1 3
. 0 8 0 . 2 0
1 . 3
0 0
. 1 0
1.30 +0.10 0.05
0.50+0.10
0.052.54TYP
[2.54 0.20 ]2.54TYP
[2.54 0.20 ]
TO-220
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TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and isnot intended to be an exhaustive list of all such trademarks.
ACExBottomlessCoolFETCROSSVOLTE2CMOSFACTFACT Quiet SeriesFAST
FASTrGTO
HiSeCISOPLANARMICROWIREPOPPowerTrench
QFETQSQuiet SeriesSuperSOT-3SuperSOT-6
SuperSOT-8SyncFET
TinyLogicUHCVCX
DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANYPRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANYLIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTORINTERNATIONAL.
As used herein:1. Life support devices or systems are devices or systemswhich, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to performwhen properly used in accordance with instructions for useprovided in the labeling, can be reasonably expected to
result in significant injury to the user.2. A critical component is any component of a life supportdevice or system whose failure to perform can bereasonably expected to cause the failure of the life supportdevice or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definitio n of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or InDesign
This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.
Preliminary First Production This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.
No Identification Needed Full Production This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.