Version 8.0

Formula and Data Sheet PHYSICAL CONSTANTS

Material (eV) (cm-3

K-3/2

)

Silicon (Si) 1.1

Gallium arsenide (GaAs) 1.4

Germanium (Ge) 0.66

Electron charge, e (or q) =

Boltzmann constant,

DIODES and RELATED

Intrinsic carrier concentration ⁄ (

)

Thermal equilibrium condition

Thermal Voltage

Built-in potential barrier

(

) (

)

Electron and hole drift

1-D electron diffusion relationship

1-D hole diffusion relationship

Einstein relation

Diode Equation [ (

) ]

Junction & diffusion capacitance (

)

Version 8.0

MOSFETS

NMOS Enhancement

PMOS Enhancement

Region NMOS PMOS

Non-Saturation/Ohmic [ ( ) ] [ ( )

]

Saturation ( ) ( )

( ) ( )

Transition Point ( )

( ( ))

( )

( ( ))

Enhancement Mode

Depletion Mode

MOSFET Constants & Capacitances

Version 8.0

MOSFET Small-Signal Models

NMOS

PMOS

PMOS

(Note Polarities)

[ ( ) ]

√ (NMOS)

√ (PMOS)

Version 8.0

NPN BJT DC Equivalent Circuit

( )

PNP BJT DC Equivalent Circuit

( )

BJT Current Relationships

NPN PNP

⁄

⁄

Both Transistors

⁄

( )

Version 8.0

BJT Hybrid- Small-Signal Models

NPN

PNP

Extended BJT Hybrid- Small-Signal Model

⁄ ⁄ ⁄

( )

( )

( )

(

)

Version 8.0

BJT Impedance Scaling

( )

( )

( )( )

( )( )

Output Resistance Scaling

( )

( ‖ ) [ ( ‖ )]

[ ( ‖ )]

[ (( )‖ )]

Version 8.0

h-Parameters

2121111 vhihv

2221212 vhihi

0

1

111 2vi

vh

0

1

221 2vi

ih 0

2

222 1iv

ih

BJT CE Version

cerebiebe vhihv

ceoebfec vhihi

‖

y-Parameters

2121111 vyvyi

2221212 vyvyi

0

1

111 2vv

iy 0

2

112 1vv

iy

0

1

221 2vv

iy 0

2

222 1vv

iy

0

2

112 1iv

vh

Version 8.0

Wien Bridge Oscillator

To sustain oscillation, the loop gain must be 3. Loop

gain with the two resistors is:

Also

Frequency of oscillation

3

ov

3

ov