Flexible Printed Electronics Suncheon

8/12/2019 Flexible Printed Electronics Suncheon

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680 m

Flexible and Printed Electronics forFlexible and Printed Electronics for

Displays and Image SensorsDisplays and Image Sensors

Jurgen Daniel (danielparc!com"#!$! #rias% &! &ong% S!E! 'eady% ! )g% *! +rusor% '!,u-an% '!#! #pte% J!P! ,u% .!,! $/abinyc% '!#! Street

Palo #lto 'esearc/ $enterPalo #lto% $#

The Future Prospects and Obstacles of Organic ElectronicsSuncheon, Feb 25, 2008


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utlineutline

A few words about PARC

Motivation for flexible and printed electronics

Required components for printed electronics

Printer Materials

TFT performance

Display and sensor applications

ome of t!e c!allen"es for printed pixel circuits


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P#'$ 1er1ie2P#'$ 1er1ie2

Electronic .aterials and De1ices

3ard2are and Systems

$omputer Sciences

Intelligent Systems

Palo #lto 'esearc/ $enter4 incorporated in 5005 (formerly erox P#'$"

#$%& researc!ers in multiple disciplines

7 labs

www.parc.com

Large Area Electronics, MEMS,

Optoelectronics, Printing Concepts/Systems,

Piezo Materials, Biomedical Systems,

Clean Technology, ...

'esearc/ 2it/ client companiesPartners/ips 2it/ ne2 1entures (startup P#'$")e2 business creation,icensing and tec/nology transfer

'esearc/ as a business


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,arge9#rea Electronics at P#'$,arge9#rea Electronics at P#'$

,o2 temperature a9Si on plastic

!ray imagers

,PS ,ED bac:plane on steel

Jet9printed digital lit/ograp/y of a9Si Fs

displays

ec/nologies

Amorp!ous silicon 'a(i)

*ow(temperature amorp!ous i

*ow(temperature poly i '*TP)

+r"anic semiconductor processes

,et(printed electronics

PA"C "#$ ser%ices&

Prototyping and System designesting and $/aracteri;ation

(W. Wong, et al.)

(J.P. Lu, et al.)


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,arge9#rea Electronics at P#'$,arge9#rea Electronics at P#'$


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Flexible Electronics #pplicationsFlexible Electronics #pplications


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.oti1ation for Printed Electronics.oti1ation for Printed Electronics

Printing can be a fast andinexpensi1e process 'e-"- newspaper)

T!erefore. printin" processes may also enableinexpensi1eelectronics for ne2 applications'RF/D ta"s. e(paper. disposableelectronics. ---)

Printin" often simplifies conventional processes

Solna &eb Presses

'in()et, pad printing, screen, gra%*re, +leo, o++set, ...-

Printable electronics mar:et5 bn (50>>"

?" @()anomar:ets!net"


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Printed Electronics #pplicationsPrinted Electronics #pplications

Duracell *attery tester

$ypa: IntelligentP/armaceuticalPac:aging

PolyI$ 'FID

$SA 1ia etc/ing

Plastic ,ogic e9paper

$D ,ED displays

+onar:a Solar cellPeli:on E, displays

ome examples

Po2er Paper battery


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Jet9printingJet9printing

9y translation stages for positioning$01 printin" capability

Pie;o print/eads (single or multi e-ector"

2erox print!ead 'stainless steel)#$3&& e4ectors 5 3&678

Potential linear print speed #m9sec

:9( 0 m print accuracy

mall drop si8e '#3&(;& m)

usin" also pectra '#$3< e4ectors) and MicroFab'sin"le e4ector) print !eads

$omputer 1ision system and soft2are foralignment and layer9to9layer registration

0950 p,

remark

!ith electrostatic "et#printing $%m lines achie&ed, but onl' !ith single e"ector ()* +urata, -+E.S/0%

PA"C et!printing system

camera

print/ead

controlsoft2are

substrate/oldertranslation

stage

Piezo in(!)etting&

#d1antages (1s! offset% gra1ure% flexograp/y"! %ariale pattern

! on!the!+ly error correction! non!contact

! 0ide range o+ materials 1incl. hot!melt2


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.aterials (In:s" for Printing.aterials (In:s" for Printing

'/T+ nanoparticles. b+. =n/n+.--- )

Polymers'e-"- lens. >D ob4ects. dielectric. colour filters.

polyimide ali"nment layers)

P!osp!ors

?iocoatin"s

@tc!ants

ilver. "old. nic6el. solder

Ma"netic nanoparticles

uantum dots

Metal !alide precursors 'e-"- nCl)

Transparent a(oxide semiconductors

@lectroluminescent materials

CBTs. nanowires

Microemulsions

*iquid crystals

pacer beads 'e-"- for *CD)

C!emicals 'e-"- explosives. narcotics for standards)

?ioc!emicals'e-"- for protein arrays)

Conductive9semiconductive polymers

Banoparticles

Ad!esion promoter

ax 9 'p!oto)resist

---

1iscosity range 970 cp

surface tension


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Digital ,it/ograp/yDigital ,it/ograp/y

simplifies lit/ograp/y

printed organic semiconductor(and PCP..# blends"-et9printed 2ax

mas:ing layer

con%entional deposition&

!sp*tterning

!PEC4$


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#ll9additi1e Printed rganic Electronics#ll9additi1e Printed rganic Electronics

s%d%g 9 contactsP@D+TPpolyanilineA"9Cu(epoxy in6snano("old

)ano9sil1er

CBTs

Thin 3ilm Transistor1T3T2

'bottom("ate)semiconductor'polymers. oli"omers. precursors. nanoparticles)

polyfluorenesporp!yrinsT/P pentacene

polyt!iop!enes (P>7T.P>5% P?TTT"CBT. nanowires. nanosilicon----

e-"-

e-"-

substrate

polyesterpolyimidePE)'polyet!ylene nap!t!alate) ---

e-"-

g

ds

inter9layer dielectrics

PMMA?C? 'ben8ocyclobutane)polyimidepin(on("lass

PP'polyvinylp!enol)epoxy 'SG98)---

e-"-

(gate dielectric% top dielectric"

many ne0 materials are introd*ced into the process

!5 per+ormance o+ the materials has to e optimized andprocess compatiility ens*red

'eHuires solution9processable materials


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/e Importance of t/e Aate Dielectric/e Importance of t/e Aate Dielectric

too hydrophobic

too hydrophilic

e.g. compatiility 0ith )et!printing&

Composites 1TiO6, BaTiO7, 8rO62

Polymer 9 sil%er nanoparticles

Cyano!ased resinsElectrolytes

Polyimide

possile gate dielectrics

SA:$S

BCB

P4A

P4PS;!


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Jet9printable rganic SemiconductorJet9printable rganic Semiconductor

/ydrop/obic self9assembled monolayersgenerally impro1e field effect mobility

c/emistry of gate dielectrics

impacts F performanceK

octadecyltric/lorosilane (S"

lamellar ordering

ng% et al!% J#$S% >56 (5007" ??B8

polyt/iop/ene P9>5

potential problems9 crystallinity of film is affected by surface9 interface traps in dielectric9 dipolar disorder due to Si93 groups

/Dtransp

ort

Si5 LstandardL dielectric


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#ll9additi1e Pixel9F#ll9additi1e Pixel9F P(based TFT wit! PP"ate dielectric and printed nanosil1er99D on PE)

,


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Jet9Printed #cti1e9.atrix *ac:planesJet9Printed #cti1e9.atrix *ac:planes

'a) 'b)

'c)

680 m

680 m

'a) 'b)

'c)

680 m

680 m

M0xM0 pixel array

glass substrate

680 m pixelsmetal printed 2it/ multi9no;;le print/eadspin9coated dielectric

gate9layer

data9layer

pixel design

printed pixels (P9F"

piel pad

T3T

data!line

gate!line


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Flexible Printed *ac:planesFlexible Printed *ac:planes

on flexible PE) polymer substrate (DuPont"

PE: s*strateP4P gate dielectricPrinted AgP>T semicond*ctor


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Pixel PerformancePixel Performance

?All!additi%e printed piels on PE: s*strate?

c!ar"in"9disc!ar"in" times #&-0ms

low "ate(feedt!rou"! 'E%G of "ate(swin")

sufficient c!ar"e stora"e

Pixel performance is sufficient to dri1e

electrop/oretic media

Picoprobe measurements


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esting of Display *ac:planesesting of Display *ac:planes

poor contact

scratc/ed data liness/orted data lines

line defect

P#'$ test electronics

array

c/arge amplifiers

Lc/arge mappingLenables 1isuali;ation of defects and of array uniformity


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#pplications for Flexible and#pplications for Flexible and

Printed Pixel $ircuitsPrinted Pixel $ircuits

Displays

Sensors

'ima"e sensors. bio(sensors. M@M sensors. ---)


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Electrop/oretic DisplaysElectrop/oretic Displays

con1entional #. bac:plane 2it/P semiconductor

fixed electrode patternflexible substrates

con1entional #. bac:plane 2it/amorp/ous Si semiconductor

1ispla' media E!in(electrophoretic imaging film

acti%e!matri acti%e!matri

segmented

(5M0 ppi"(BM ppi"

"&%e&ew

electrophoretic media


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Flex Displays 2it/ ,o29 a9SiFlex Displays 2it/ ,o29 a9Si

6K flexible display(E9in: media"

istale image a+ter @ month

6K digital lit/ograp/y array

8K p/otolit/ograp/y array on PE)

'printed mas6 layers)

TFT


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#ll9additi1e *ac:plane 2it/#ll9additi1e *ac:plane 2it/

Electrop/oretic .ediaElectrop/oretic .edia

4et(printed silver 99D and PT semiconductor polymer "ate dielectric

charge map&

bac:plane is capable of 2riting imagesimage is consistent 2it/ c/arge map

M0xM0 pixel array


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Sensor #pplicationsSensor #pplications

2(ray ima"e2(ray ima"e

?9C li"!t ima"e?9C li"!t ima"e

$


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,PS on Flexible Stainless Steel,PS on Flexible Stainless Steel,PS ,aser recrystalli;ed a9Si

PM+ mobilities up to MN cm5Cs

A# full color ,ED display demonstrated (collaboration 2it/ GD$ and ,?"

F performance similar to Fs on glass

;$C?s

phosphorescent

OLE$


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)e2 3emisp/erical #rrays)e2 3emisp/erical #rrays

Aeodesic dome

@ye(li6e ima"ersp!erical displays

-- on". T-B- B". R- A- *u4an. - ambandan. ?- Hrusor. R-A- treet

Applications


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$/allenges for Printed *ac:planes$/allenges for Printed *ac:planes

3ig/er display resolution De1ice stability'environmental. It s!ift)

$ircuit speed'e-"- for full video or for printed driver circuitry)

Cost of driver electronics and battery. versus

printed bac6plane'transferred /Cs. printed batteries J)

Printin" yield

,arge9scale manufacturing ('oll9to 'oll"


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Impro1ed Printing ProcessImpro1ed Printing Process Printing of narro2 lines Printing of narro2 spaces

>0 m

s/ort F c/annel lengt/increased pixel aperture ratio

minimum 1alue is determined

by drop placement accuracy

M? m

printed nano!sil%er

decreasing surface energy


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.ulti9layer Pixel ia Formation.ulti9layer Pixel ia Formation1ia formation by -et9printing a mas:

process steps

sil%er mas(

%ia interconnect %ia an( str*ct*re

%ia


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.ulti9layer Pixel 2it/ .olded Dielectric.ulti9layer Pixel 2it/ .olded Dielectric(for /ig/er resolution"(for /ig/er resolution"

side view

top view

.ulti9layer pixel

printed 2ax pillar


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*ias Stress Effects in PP9based Fs*ias Stress Effects in PP9based FsP4P/PSS>

Si59li:e alleo. et al-. Appl- P!ys- *ett-.


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*ias Stress in #ll9additi1e Fs*ias Stress in #ll9additi1e Fs

PQT semiconductor


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Speed of Display 4 1ideo rate @Speed of Display 4 1ideo rate @

>N0x67 m%

$st


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'oll9to9'oll Processing'oll9to9'oll Processing

.e:oprint Electronics

+onar:a

PolyI$

$IC ennia

ould be most adequate met!od forprintin" processes

/s used already for some or"anic

electronics applications

till requires materials improvement fors!ort processin" times

*ayer to layer re"istration is c!allen"in"

/s it t!e best met!od for display

bac6planes J

Prof A! $/o(Sunc/on )ational Gni1!"


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Summary and utloo:Summary and utloo:

PARC !as a wide portfolio of flexible bac:planetec/nologies

All(additive printed electronics promises ultimate costsa1ings

.any ne2 materialsare introduced in t!e process (performance9lifetime of t!e materials !as to be

investi"ated

,o2 resolution pixel circuitse-"- for si"na"e(typeapplications

3ig/er resolution(L multilayer pixel desi"n or narrowerprinted lines

Prototype electrop/oretic displays!ave been fabricated


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#c:no2ledgment#c:no2ledgment

PA"C processin" line under,ac6son 7o

ero "esearch Centre o+ Canada Pin" *iu. ilian" u

:DST partial fundin"

Dupont ei-in P@B substrates

E9In:collaboration on electrop!oretic media

Flexible Printed Electronics Suncheon

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