files.iczoom.com · A N P E C MOSFET TRANSISTORS N-Channel MOSFET TABLE OF CONTENT Pos. Series...

A N P E C

MOSFET TRANSISTORS

N-Channel MOSFET

TABLE OF CONTENT Pos. Series Drain Source Voltage Continue Drain Current Case Pages V DSS (V) I D (A) 01 APM 2050 ND 20 5 SOT-89 11 02 APM 3040 ND 30 3 SOT-89 9 03 APM 3054 ND 30 4 SOT-89 10 04 APM 2054 NV 20 5 SOT-223 11 05 APM 3054 NV 30 4 SOT-223 10 06 APM 3055 NG 30 12 TO-263 10 07 APM 4008 NG 40 60 TO-263 11 08 APM 7512 NG 75 75 TO-263 11 09 APM 2506 NUB 25 60 TO-251 10 10 APM 2509 NUB 25 50 TO-251 10 11 APM 2506 NF 25 60 TO-220 9 12 APM 2509 NF 25 50 TO-220 9 13 APM 7512 NF 75 80 TO-220 9 14 APM 4412 NF 30 12 SOP-8 11 15 APM 4810 K 30 11 SOP-8 10 16 APM 4812 K 30 8 SOP-8 9 17 APM 4320 K 30 13 SOP-8 10 18 APM 4330 KC 30 15 SOP-8 10 19 APM 4340 K 30 17 SOP-8 11 20 APM 4472 K 40 12 SOP-8 10 21 APM 4476 K 40 7.5 SOP-8 11 22 APM 4474 K 40 11 SOP-8 9 23 APM 4220 KA 25 16 SOP-8 11 24 APM 4350 KP 30 60 KPAK 11 25 APM 4354 KP 30 70 KPAK 11 26 APM 4356 KP 30 80 KPAK 11 27 APM 9984 CCG 20 6 JSOT-8 11 28 APM 2322 AA 20 1.7 SOT-23 10 29 APM 2324 AA 20 3 SOT-23 10 30 APM 2300 CA 20 6 SOT-23 10 31 APM 2306 A 30 3.5 SOT-23 10 32 APM 2308 A 30 3 SOT-23-3 10 33 APM 2318 A 30 3 SOT-23-3 9 34 APM 2320 A 30 2.5 SOT-23-3 11 35 APM 2360 A 60 2.5 SOT-23 9 36 APM 2600 C 30 6 SOT-23-6 11 37 APM 1402 AS 20 1.1 SC-70 10 38 APM 1404 AS 20 1.5 SC-70-3 10

N-Channel Enhancement Mode MOSFET

Copyright ANPEC Electronics Corp.Rev. A.2 - Sep., 2008

APM2050ND

www.anpec.com.tw1

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, andadvise customers to obtain the latest version of relevant information to verify before placing orders.

Pin Description

Ordering and Marking Information

Features

Applications

• 20V/5A,

RDS(ON)=25mΩ(Typ.) @ VGS=10VRDS(ON)=30mΩ(Typ.) @ VGS=4.5VRDS(ON)=50mΩ(Typ.) @ VGS=2.5V

• Super High Dense Cell Design

• Reliable and Rugged

• Lead Free and Green Devices Available

(RoHS Compliant)

N-Channel MOSFET

Top View of SOT-89

• DC/DC Converters

G

S

D

(3)

(2)

(1)

Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina-tion finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirementsof IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” tomean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneousmaterial and total of Br and Cl does not exceed 1500ppm by weight).

GD

S

APM2050N

Handling Code

Temperature Range

Package Code

Package Code D : SOT-89Operating Junction Temperature Range C : -55 to 150 oCHandling Code TR : Tape & ReelAssembly Material L : Lead Free Device G : Halogen and Lead Free Device

APM2050N D : APM2050XXXXX_N

XXXXX - Date Code

Assembly Material


APM2050ND

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Absolute Maximum Ratings (TA = 25°C unless otherwise noted)

Electrical Characteristics (TA = 25°C unless otherwise noted)

Symbol Parameter Rating Unit

VDSS Drain-Source Voltage 20

VGSS Gate-Source Voltage ±12 V

ID* Continue Drain Current 5

IDM* Pulsed Drain Current VGS=10V

20 A

IS* Diode Continuous Forward Current 2 A

TJ Maximum Junction Temperature 150

TSTG Storage Temperature Range -55 to 150 °C

TA=25°C 1.47 PD* Power Dissipation for Single Operation

TA=100°C 0.58 W

RθJA* Thermal Resistance-Junction to Ambient 85 °C/W

Note * : Surface Mounted on 1in2 pad area, t ≤ 10 Seconds.

APM2050ND Symbol Parameter Test Conditions

Min. Typ. Max. Unit

STATIC CHARACTERISTICS

BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 20 - - V

VDS=16V, VGS=0V - - 1 IDSS Zero Gate Voltage Drain Current

TJ=85°C - - 30 µA

VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 0.6 0.9 1.5 V

IGSS Gate Leakage Current VGS=±12V, VDS=0V - - ±10 µA

VGS=10V, IDS=5A - 25 35

VGS=4.5V, IDS=3.5A - 30 50 RDS(ON) a Drain-Source On-state Resistance

VGS=2.5V, IDS=2.5A - 50 85

mΩ

VSDa Diode Forward Voltage ISD=2A, VGS=0V - 0.8 1.3 V

GATE CHARGE CHARACTERISTICS b

Qg Total Gate Charge - 6 8

Qgs Gate-Source Charge - 1 -

Qgd Gate-Drain Charge

VDS=10V, VGS=4.5V, IDS=5A

- 2.6 -

nC


APM2050ND

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Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)


Min. Typ. Max. Unit

DYNAMIC CHARACTERISTICS b

Ciss Input Capacitance - 375 -

Coss Output Capacitance - 105 -

Crss Reverse Transfer Capacitance

VGS=0V, VDS=10V, Frequency=1.0MHz - 85 -

pF

td(ON) Turn-on Delay Time - 4 8

Tr Turn-on Rise Time - 11 21

td(OFF) Turn-off Delay Time - 22 41

Tf Turn-off Fall Time

VDD=10V, RL=10Ω, IDS=1A, VGEN=4.5V, RG=6Ω

- 8 15

ns

trr Reverse Recovery Time - 15 - ns

Qrr Reverse Recovery Charge IDS=5A, dlSD/dt=100A/µs

- 5 - nC

Note a : Pulse test ; pulse width≤300µs, duty cycle≤2%. Note b : Guaranteed by design, not subject to production testing.


APM2050ND

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Typical Operating Characteristics

Power Dissipation

Pto

t - P

ower

(W)

Tj - Junction Temperature (°C)

Drain Current

Tj - Junction Temperature

I D -

Dra

in C

urre

nt (

A)

Thermal Transient Impedance

Nor

mal

ized

Tra

nsie

nt T

herm

al R

esis

tanc

e

Square Wave Pulse Duration (sec)

Safe Operation Area

VDS - Drain - Source Voltage (V)

I D -

Dra

in C

urre

nt (A

)

0 20 40 60 80 100 120 140 1600.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

TA=25oC

0 20 40 60 80 100 120 140 1600

1

2

3

4

5

6

TA=25oC,V

G=10V

1E-4 1E-3 0.01 0.1 1 10 1000.01

0.1

1

2

Mounted on 1in2 padR

θJA : 85oC/W

0.01

0.02

0.05

0.1

0.2

Single Pulse

Duty = 0.5

0.01 0.1 1 10 1000.01

0.1

1

10

100

100ms

Rds(on

) Lim

it

300µs

TA=25oC

1s

1ms

10ms

DC


APM2050ND

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I D -

Dra

in C

urre

nt (A

)

Output Characteristics

RD

S(O

N) -

On

- R

esis

tanc

e (m

Ω)

Drain-Source On Resistance

ID - Drain Current (A)


VGS - Gate - Source Voltage (V)

RD

S(O

N) -

On

- R

esis

tanc

e (m

Ω)


Gate Threshold Voltage

Nor

mal

ized

Thr

esho

ld V

olta

ge

Typical Operating Characteristics (Cont.)

0.0 0.5 1.0 1.5 2.0 2.5 3.00

2

4

6

8

10

12

14

16

18

20

2V

2.5V

VGS

=3,4,5,6,7,8,9,10V

0 4 8 12 16 200

10

20

30

40

50

60

70

80

90

VGS

=2.5V

VGS

=10V

VGS

=4.5V

1 2 3 4 5 6 7 8 9 100

10

20

30

40

50

60

70

80

90

ID=5A

-50 -25 0 25 50 75 100 125 1500.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

IDS

=250µA


APM2050ND

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Nor

mal

ized

On

Res

ista

nce

Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V)

Source-Drain Diode Forward

I S -

Sou

rce

Cur

rent

(A)

VDS - Drain-Source Voltage (V)

C -

Cap

acita

nce

(pF)

Capacitance Gate Charge

QG - Gate Charge (nC)

VG

S -

Gat

e-so

urce

Vol

tage

(V)

-50 -25 0 25 50 75 100 125 1500.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

RON

@Tj=25oC: 25mΩ

VGS

= 10V

IDS

= 5A

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.60.1

1

10

20

Tj=25oC

Tj=150oC

0 2 4 6 8 10 120

1

2

3

4

5

6

7

8

9

10V

DS=10V

ID = 5A

0 4 8 12 16 200

100

200

300

400

500

600

700

Frequency=1MHz

Crss Coss

Ciss



APM2050ND

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Package Information

SOT-89

SYMBO MIN. MAX.

MILLIMETERS

SOT-89

MIN. MAX.

INCHES

A

C

e1

e

BB1

D

D1

H

EL

E1

1.60

0.44

0.35 0.44

4.40 4.60

1.62 1.83

0.56

2.13

A

B

C

D

D1

E

E1

e

e1

B1 0.36 0.48

3.00 BSC

3.94 4.25

2.29 2.60

2.29

0.118 BSC

0.063

0.017

0.014 0.019

0.014 0.017

0.173 0.181

0.064 0.072

0.084

0.155 0.167

0.090 0.102

0.090

0.022

L 0.89 0.035

H

1.50 BSC 0.059 BSC

1.40

1.20 0.047

0.055L

Note : Follow JEDEC TO-243 AA.


APM2050ND

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Application A H T1 C d D W E1 F

178.0±2.00 50 MIN. 12.4+2.00-0.00

13.0+0.50 -0.20

1.5 MIN. 20.2 MIN. 12.0±0.30 1.75±0.10 5.50±0.05

P0 P1 P2 D0 D1 T A0 B0 K0 SOT-89

4.0±0.10 8.0±0.10 2.0±0.05 1.5+0.10 -0.00 1.5 MIN. 0.6+0.00

-0.404.80±0.20 4.50±0.20 1.80±0.20

(mm)

Package Type Unit Quantity SOT-89 Type & Reel 1000

Devices Per Unit

Carrier Tape & Reel Dimensions

H

T1

A

d

A

E1

AB

W

F

T

P0OD0

BA0

P2

K0

B0

SECTION B-B

SECTION A-A

OD1

P1


APM2050ND

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Reflow Condition (IR/Convection or VPR Reflow)

Reliability Test Program

t 25 C to Peak

tp

Ramp-up

tL

Ramp-downts

Preheat

Tsmax

Tsmin

TL

TP

25

Tem

per

atu

re

Time

Critical ZoneTL to TP

°

Taping Direction Information

Test item Method Description SOLDERABILITY MIL-STD-883D-2003 245°C, 5 sec HOLT MIL-STD-883D-1005.7 1000 Hrs Bias @125°C PCT JESD-22-B, A102 168 Hrs, 100%RH, 121°C TST MIL-STD-883D-1011.9 -65°C~150°C, 200 Cycles ESD MIL-STD-883D-3015.7 VHBM > 2KV, VMM > 200V Latch-Up JESD 78 10ms, 1tr > 100mA

SOT-89

USER DIRECTION OF FEED


APM2050ND

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Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate (TL to TP) 3°C/second max. 3°C/second max.

Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts)

100°C 150°C

60-120 seconds

150°C 200°C

60-180 seconds

Time maintained above: - Temperature (TL) - Time (tL)

183°C 60-150 seconds


Peak/Classification Temperature (Tp) See table 1 See table 2 Time within 5°C of actual Peak Temperature (tp)

10-30 seconds 20-40 seconds

Ramp-down Rate 6°C/second max. 6°C/second max.

Time 25°C to Peak Temperature 6 minutes max. 8 minutes max. Note: All temperatures refer to topside of the package. Measured on the body surface.

Table 2. Pb-free Process – Package Classification Reflow Temperatures Package Thickness Volume mm3

<350 Volume mm3

350-2000 Volume mm3

>2000 <1.6 mm 260 +0°C* 260 +0°C* 260 +0°C*

1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C* ≥2.5 mm 250 +0°C* 245 +0°C* 245 +0°C*

*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0°C. For example 260°C+0°C) at the rated MSL level.

Table 1. SnPb Eutectic Process – Package Peak Reflow Temperatures Package Thickness Volume mm3

<350 Volume mm3

≥350 <2.5 mm 240 +0/-5°C 225 +0/-5°C ≥2.5 mm 225 +0/-5°C 225 +0/-5°C

Customer Service

Anpec Electronics Corp.Head Office :

No.6, Dusing 1st Road, SBIP,Hsin-Chu, Taiwan, R.O.C.Tel : 886-3-5642000Fax : 886-3-5642050

Taipei Branch :2F, No. 11, Lane 218, Sec 2 Jhongsing Rd.,Sindain City, Taipei County 23146, TaiwanTel : 886-2-2910-3838

Fax : 886-2-2917-3838

Classification Reflow Profiles


Copyright ANPEC Electronics Corp.Rev. B.3 - Dec., 2008

APM3040ND

www.anpec.com.tw1


Pin Description


Features

Applications

• Switching Regulators

• Switching Converters

• 30V/3A,

RDS(ON)=31mΩ(typ.) @ VGS=10V RDS(ON)=35mΩ(typ.) @ VGS=4.5V RDS(ON)=55mΩ(typ.) @ VGS=2.5V



• Lead Free and Green Devices Available (RoHS Compliant)

N-Channel MOSFET

Top View of SOT-89

GD

S

G

S

D

(3)

(2)

(1)


APM3040N

Handling CodeTemperature RangePackage Code

Package Code D : SOT-89Operating Junction Temperature Range C : -55 to 150 oCHandling Code TR : Tape & ReelAssembly Material G : Halogen and Lead Free Device

APM3040N D: APM3040XXXXX_N

XXXXX - Date Code

Assembly Material


APM3040ND

www.anpec.com.tw2






ID* Continuous Drain Current 3

IDM* 300µs Pulsed Drain Current VGS=10V

12 A





TA=100°C 0.58 W


Note：*Surface Mounted on 1in2 pad area, t ≤ 10sec.


Min. Typ. Max. Unit




TJ=85°C - - 30 µA


IGSS Gate Leakage Current VGS=±12V, VDS=0V - - ±100 nA

VGS=10V, IDS=3A - 31 40

VGS=4.5V, IDS=1.5A - 35 50 RDS(ON) a Drain-Source On-State Resistance

VGS=2.5V, IDS=0.5A - 55 70

mΩ

VSDa Diode Forward Voltage ISD=0.5A , VGS=0V - 0.7 1.3 V



Qgs Gate-Source Charge - 2.5 -


VDS=15V, VGS=10V, IDS=3A

- 2 -

nC


APM3040ND

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Min. Typ. Max. Unit


RG Gate Resistance VGS=0, VDS=0, F=1MHz - 1.5 - Ω





pF





VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω

- 20 38

ns



APM3040ND

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1E-4 1E-3 0.01 0.1 1 10 1001E-3

0.01

0.1

1

2


θJA : 85 oC/W

0.01

0.02

0.05

0.1

0.2

Single Pulse

Duty = 0.5


Power Dissipation

Pto

t - P

ower

(W)


Drain Current


ID -

Dra

in C

urre

nt (A

)


Nor

mal

ized

Tra

nsie

nt T

herm

al R

esis

tanc

e


Safe Operation Area


ID -

Dra

in C

urre

nt (A

)

0 20 40 60 80 100 120 140 1600.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

TA=25oC

0 20 40 60 80 100 120 140 160 1800.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

TA=25oC,V

G=10V

0.01 0.1 1 10 1000.01

0.1

1

10

30

Rds(o

n) Li

mit

1s

TA=25oC

10ms

300µs

1ms

100ms

DC


APM3040ND

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ID -

Dra

in C

urre

nt (A

)


RD

S(O

N) - O

n - R

esis

tanc

e (m

Ω)



Transfer Characteristics


ID -

Dra

in C

urre

nt (A

)



Nor

mal

ized

Thr

esho

ld V

olta

ge


0 2 4 6 8 100

2

4

6

8

10

12

2V

1.5V

VGS

= 3,4,5,6,7,8,9,10V

0 2 4 6 8 10 120

15

30

45

60

75

90

VGS

=10V

VGS

=2.5V

VGS

=4.5V

0.0 0.5 1.0 1.5 2.0 2.5 3.000

2

4

6

8

10

12

Tj=125oC

Tj=25oC T

j=-55oC

-50 -25 0 25 50 75 100 125 1500.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

IDS

=250µA


APM3040ND

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Nor

mal

ized

On

Res

ista

nce



IS -

Sou

rce

Cur

rent

(A)


C -

Cap

acita

nce

(pF)



VG

S -

Gat

e-so

urce

Vol

tage

(V)


-50 -25 0 25 50 75 100 125 1500.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

RON

@Tj=25oC: 31mΩ

VGS

= 10V

IDS

= 3A

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.40.1

1

10

Tj=150oC

Tj=25oC

0 5 10 15 20 25 300

100

200

300

400

500

600Frequency=1MHz

CrssCoss

Ciss

0 4 8 12 16 200

2

4

6

8

10V

DS=15V

IDS

= 3A


APM3040ND

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SOT-89

Package Information

SYMBO MIN. MAX.

MILLIMETERS

SOT-89

MIN. MAX.

INCHES

A

C

e1

e

BB1

D

D1

H

EL

E1

1.60

0.44

0.35 0.44

4.40 4.60

1.62 1.83

0.56

2.13

A

B

C

D

D1

E

E1

e

e1

B1 0.36 0.48

3.00 BSC

3.94 4.25

2.29 2.60

2.29

0.118 BSC

0.063

0.017

0.014 0.019

0.014 0.017

0.173 0.181

0.064 0.072

0.084

0.155 0.167

0.090 0.102

0.090

0.022

L 0.89 0.035

H

1.50 BSC 0.059 BSC

1.40

1.20 0.047

0.055L



APM3040ND

www.anpec.com.tw8


178.0±2.00 50 MIN. 12.4+2.00 -0.00

13.0+0.50 -0.20

1.5 MIN. 20.2 MIN. 12.0±0.30 1.75±0.10 5.50±0.05

P0 P1 P2 D0 D1 T A0 B0 K0 SOT-89

4.0±0.10 8.0±0.10 2.0±0.05 1.5+0.10 -0.00 1.5 MIN. 0.6+0.00

-0.40 4.80±0.20 4.50±0.20 1.80±0.20

(mm)


H

T1

A

d

A

E1

AB

W

F

T

P0OD0

BA0

P2

K0

B0

SECTION B-B

SECTION A-A

OD1

P1

Devices Per Unit

Package Type Unit Quantity

SOT-89 Tape & Reel 1000


APM3040ND

www.anpec.com.tw9

Test item Method Description SOLDERABILITY MIL-STD-883D-2003 245°C, 5 sec HOLT MIL-STD-883D-1005.7 1000 Hrs Bias @125°C PCT JESD-22-B, A102 168 Hrs, 100%RH, 121°C TST MIL-STD-883D-1011.9 -65°C~150°C, 200 Cycles



t 25 C to Peak

tp

Ramp-up

tL

Ramp-downts

Preheat

Tsmax

Tsmin

TL

TP

25

Tem

per

atur

e

Time


°

Taping Direction InformationSOT-89



APM3040ND

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100°C 150°C

60-120 seconds

150°C 200°C

60-180 seconds






Ramp-down Rate 6°C/second max. 6°C/second max. Time 25°C to Peak Temperature 6 minutes max. 8 minutes max. Note: All temperatures refer to topside of the package. Measured on the body surface.

Table 2. Pb-free Process – Package Classification Reflow Temperatures

Package Thickness Volume mm3 <350

Volume mm3 350-2000

Volume mm3 >2000

<1.6 mm 260 +0°C* 260 +0°C* 260 +0°C* 1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C*

≥2.5 mm 250 +0°C* 245 +0°C* 245 +0°C* *Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0°C. For example 260°C+0°C) at the rated MSL level.

Table 1. SnPb Eutectic Process – Package Peak Reflow Temperatures

Package Thickness Volume mm3

<350 Volume mm3

≥350 <2.5 mm 240 +0/-5°C 225 +0/-5°C ≥2.5 mm 225 +0/-5°C 225 +0/-5°C

Customer ServiceAnpec Electronics Corp.Head Office :


Taipei Branch :2F, No. 11, Lane 218, Sec 2 Jhongsing Rd.,Sindain City, Taipei County 23146, TaiwanTel : 886-2-2910-3838Fax : 886-2-2917-3838




APM3054ND

www.anpec.com.tw1


Pin Description


Features

Applications



• 30V/4A,

RDS(ON)=48mΩ(typ.) @ VGS=10V RDS(ON)=75mΩ(typ.) @ VGS=4.5V




N-Channel MOSFET

Top View of SOT-89

GD

S


G

S

D

(3)

(2)

(1)

APM3054N


Package Code D : SOT-89Operating Junction Temperature Range C : -55 to 150 oCHandling Code TR : Tape & ReelAssembly Material G : Halogen and Lead Free Device

APM3054N D: APM3054XXXXX

XXXXX - Date Code

Assembly Material


APM3054ND

www.anpec.com.tw2








16 A





TA=100°C 0.58 W


Note : *Surface Mounted on 1in2 pad area, t ≤ 10sec.


Min. Typ. Max. Unit

Static Characteristics



TJ=85°C - - 30 µA

VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 1 1.5 2 V


VGS=10V, IDS=4A - 48 54 RDS(ON)

a Drain-Source On-state Resistance VGS=4.5V, IDS=3A - 75 90

mΩ


Gate Charge Characteristics b

Qg Total Gate Charge - 17.6 24




- 2.8 -

nC


APM3054ND

www.anpec.com.tw3


Min. Typ. Max. Unit

Dynamic Characteristics b

RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 2.3 - Ω





pF






- 4 6

ns




APM3054ND

www.anpec.com.tw4

1E-4 1E-3 0.01 0.1 1 10 1001E-3

0.01

0.1

1

2


θJA : 85 oC/W

0.01

0.02

0.05

0.1

0.2

Single Pulse

Duty = 0.5


Power Dissipation

Pto

t - P

ower

(W)


Drain Current


ID -

Dra

in C

urre

nt (A

)


Nor

mal

ized

Tra

nsie

nt T

herm

al R

esis

tanc

e


Safe Operation Area


ID -

Dra

in C

urre

nt (A

)

0 20 40 60 80 100 120 140 1600.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

TA=25oC

0 20 40 60 80 100 120 140 1600.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

TA=25oC,V

G=10V

0.01 0.1 1 10 1000.01

0.1

1

10

50

1ms

TA=25oC

Rds(o

n) Li

mit

1s

10ms

300µs

100ms

DC


APM3054ND

www.anpec.com.tw5


ID -

Dra

in C

urre

nt (A

)


RD

S(O

N) - O

n - R

esis

tanc

e (m

Ω)





ID -

Dra

in C

urre

nt (A

)



Nor

mal

ized

Thr

esho

ld V

olta

ge


0 1 2 3 4 50

2

4

6

8

10

12

14

16

3V

4V

5V

VGS

= 6, 7, 8, 9, 10V

0 1 2 3 4 5 6 7 80

2

4

6

8

10

12

14

16

Tj=125oC

Tj=25oC

Tj=-55oC

-50 -25 0 25 50 75 100 125 1500.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4IDS

=250µA

0 2 4 6 8 10 12 14 1610

20

30

40

50

60

70

80

90

100

110

120

VGS

=10V

VGS

=4.5V


APM3054ND

www.anpec.com.tw6


Nor

mal

ized

On

Res

ista

nce



IS -

Sou

rce

Cur

rent

(A)


C -

Cap

acita

nce

(pF)



VG

S -

Gat

e-so

urce

Vol

tage

(V)


-50 -25 0 25 50 75 100 125 1500.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

RON

@Tj=25oC: 48mΩ

VGS

= 10V

IDS

= 4A

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.61

10

20

Tj=25oC

Tj=150oC

0 5 10 15 20 25 300

100

200

300

400

500

600

Frequency=1MHz

Ciss

Coss

Crss

0 2 4 6 8 10 12 14 16 180

1

2

3

4

5

6

7

8

9

10V

DS=15V

ID = 4A


APM3054ND

www.anpec.com.tw7

SOT-89

Package Information

SYMBO MIN. MAX.

MILLIMETERS

SOT-89

MIN. MAX.

INCHES

A

C

e1

e

BB1

D

D1

H

EL

E1

1.60

0.44

0.35 0.44

4.40 4.60

1.62 1.83

0.56

2.13

A

B

C

D

D1

E

E1

e

e1

B1 0.36 0.48

3.00 BSC

3.94 4.25

2.29 2.60

2.29

0.118 BSC

0.063

0.017

0.014 0.019

0.014 0.017

0.173 0.181

0.064 0.072

0.084

0.155 0.167

0.090 0.102

0.090

0.022

L 0.89 0.035

H

1.50 BSC 0.059 BSC

1.40

1.20 0.047

0.055L



APM3054ND

www.anpec.com.tw8


178.0±2.00 50 MIN. 12.4+2.00 -0.00

13.0+0.50 -0.20

1.5 MIN. 20.2 MIN. 12.0±0.30 1.75±0.10 5.50±0.05

P0 P1 P2 D0 D1 T A0 B0 K0 SOT-89

4.0±0.10 8.0±0.10 2.0±0.05 1.5+0.10 -0.00 1.5 MIN. 0.6+0.00

-0.40 4.80±0.20 4.50±0.20 1.80±0.20

(mm)


H

T1

A

d

A

E1

AB

W

F

T

P0OD0

BA0

P2

K0

B0

SECTION B-B

SECTION A-A

OD1

P1

Devices Per Unit




APM3054ND

www.anpec.com.tw9




t 25 C to Peak

tp

Ramp-up

tL

Ramp-downts

Preheat

Tsmax

Tsmin

TL

TP

25

Tem

per

atur

e

Time


°




APM3054ND

www.anpec.com.tw10



100°C 150°C

60-120 seconds

150°C 200°C

60-180 seconds









Volume mm3 350-2000

Volume mm3 >2000

<1.6 mm 260 +0°C* 260 +0°C* 260 +0°C* 1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C*




<350 Volume mm3

≥350 <2.5 mm 240 +0/-5°C 225 +0/-5°C ≥2.5 mm 225 +0/-5°C 225 +0/-5°C







www.anpec.com.tw1

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advisecustomers to obtain the latest version of relevant information to verify before placing orders.

APM2054NV

Pin Description


Features

Applications

• 20V/5A,RDS(ON)= 35mΩ (Typ.) @ VGS= 10VRDS(ON)= 45mΩ (Typ.) @ VGS= 4.5V

RDS(ON)= 110mΩ (Typ.) @ VGS= 2.5V• Super High Dense Cell Design• Reliable and Rugged• Lead Free and Green Devices Available

(RoHS Compliant)



Top View of SOT-223

N-Channel MOSFET


G

S

D

(3)

(2)

(1)

GD

S

APM2054N


Package Code V : SOT-223Operating Junction Temperature Range C : -55 to 150 oCHandling Code TR : Tape & ReelAssembly Material G : Halogen and Lead Free Device

APM2054N V : APM2054NXXXXX

XXXXX - Date Code

Assembly Material


www.anpec.com.tw2

APM2054NV






20 A





TA=100°C 0.58 W





APM2054NV Symbol Parameter Test Conditions

Min. Typ. Max. Unit




TJ=85°C - - 30 µA



VGS=10V, IDS=5A - 35 40

VGS=4.5V, IDS=3.5A - 45 54 RDS(ON) a Drain-Source On-state Resistance

VGS=2.5V, IDS=2.5A - 110 130

mΩ







- 5.2 -

nC


www.anpec.com.tw3

APM2054NV


Min. Typ. Max. Unit


td(ON) Turn-On Delay Time - 7 10

Tr Turn-On Rise Time - 15 25

td(OFF) Turn-Off Delay Time - 19 26

Tf Turn-Off Fall Time


- 6 7

ns






pF




www.anpec.com.tw4

APM2054NV


Power Dissipation

Pto

t - P

ower

(W)


ID -

Dra

in C

urre

nt (A

)

Drain Current


Safe Operation Area


ID -

Dra

in C

urre

nt (A

)

Nor

mal

ized

Tra

nsie

nt T

herm

al R

esis

tanc

e



0 20 40 60 80 100 120 140 1600.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

TA=25oC

0 20 40 60 80 100 120 140 1600

1

2

3

4

5

6

TA=25oC,V

G=10V

0.1 1 10 600.01

0.1

1

10

100

100ms

Rds(on

) Limit

300µs

TA=25oC

1s

1ms

10ms

DC

1E-4 1E-3 0.01 0.1 1 10 1001E-3

0.01

0.1

1

2


θJA :85 oC/W

0.01

0.02

0.05

0.1

0.2

Single Pulse

Duty = 0.5


www.anpec.com.tw5

APM2054NV


ID -

Dra

in C

urre

nt (A

)


RD

S(O

N) - O

n - R

esis

tanc

e (m

Ω)





ID -

Dra

in C

urre

nt (A

)



Nor

mal

ized

Thr

esho

ld V

olta

ge

0 2 4 6 8 100

2

4

6

8

10

12

14

16

18

20

2V

3V

VGS

= 4, 5, 6, 7, 8, 9, 10V

0 4 8 12 16 200

20

40

60

80

100

120

140

160

VGS

=10V

VGS

=4.5V

VGS

=2.5V

0 1 2 3 4 50

2

4

6

8

10

12

14

16

18

20

Tj=125oC

Tj=25oC

Tj=-55oC

-50 -25 0 25 50 75 100 125 1500.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

IDS

=250µA



www.anpec.com.tw6

APM2054NV


Nor

mal

ized

On

Res

ista

nce



IS -

Sou

rce

Cur

rent

(A)


C -

Cap

acita

nce

(pF)



VG

S -

Gat

e-so

urce

Vol

tage

(V)

-50 -25 0 25 50 75 100 125 1500.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

RON

@Tj=25oC: 35mΩ

VGS

= 10V

IDS

= 5A

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.41

10

20

Tj=25oC

Tj=150oC

0 4 8 12 16 200

100

200

300

400

500

600

700

Frequency=1MHz

Crss

Coss

Ciss

0 4 8 12 16 20 240

1

2

3

4

5

6

7

8

9

10V

DS=10V

ID = 5A



www.anpec.com.tw7

APM2054NV

Package Information

SOT-223

AA2

VIEW A

0.25L

GAUGE PLANESEATING PLANE

A1

D

E

e1

e

b2

E1

SEEVIEW A

c

b°

0

SYMBOL MIN. MAX.

1.80

0.02

0.66 0.84

2.90 3.10

0.23 0.33

0.10

6.70

A

A1

b

b2

c

D

E

E1

e

MILLIMETERS

A2 1.50 1.70

2.30 BSC

SOT-223

3.30 3.70

6.30 6.70

7.30

0.091 BSC

MIN. MAX.

INCHES

0.071

0.001

0.059 0.067

0.026 0.033

0.114 0.122

0.009 0.013

0.264

0.130 0.146

0.248 0.264

0.287

0.004

0

L 0.75 0.030

e1 4.60 BSC 0.181 BSC

°10°0 °10°0

Note : 1. Follow from JEDEC TO-261 AA. 2. Dimension D and E1 are determined at the outermost extremes of the plastic exclusive of mold flash, tie bar burrs, gate burrs, and interlead flash, but including any mismatch between the top and bottom of the plastic body.


www.anpec.com.tw8

APM2054NV


320.0±2.00 50 MIN. 12.4+2.00 -0.00

13.0+0.50 -0.20

1.5 MIN. 20.2 MIN. 12.00±0.30 1.75±0.10 5.50±0.05

P0 P1 P2 D0 D1 T A0 B0 K0 SOT-223

4.00±0.10 8.00±0.10 2.00±0.50 1.5+0.10 -0.00 1.5 MIN. 0.6+0.00

-0.40 6.90±0.20 7.50±0.20 2.10±0.20

(mm)


H

T1

A

d

A

E1

AB

W

F

T

P0OD0

BA0

P2

K0

B0

SECTION B-B

SECTION A-A

OD1

P1

Devices Per Unit




www.anpec.com.tw9

APM2054NV



t 25 C to Peak

tp

Ramp-up

tL

Ramp-downts

Preheat

Tsmax

Tsmin

TL

TP

25

Tem

per

atu

re

Time


°



SOT-223



www.anpec.com.tw10

APM2054NV



100°C 150°C

60-120 seconds

150°C 200°C

60-180 seconds










Volume mm3 350-2000

Volume mm3 >2000

<1.6 mm 260 +0°C* 260 +0°C* 260 +0°C* 1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C*




<350 Volume mm3

≥350 <2.5 mm 240 +0/-5°C 225 +0/-5°C ≥2.5 mm 225 +0/-5°C 225 +0/-5°C

Customer Service




Fax : 886-2-2917-3838




APM3054NV

www.anpec.com.tw1


Pin Description


Features

Applications



• 30V/4A,




• Lead Free and Green Devices Available(RoHS Compliant)

N-Channel MOSFET

Top View of SOT-223

GD

S

G

S

D

(3)

(2)

(1)


APM3054N


Package Code V : SOT-223Operating Junction Temperature Range C : -55 to 150 oCHandling Code TR : Tape & ReelAssembly Material G : Halogen and Lead Free Device

APM3054N V: APM3054NXXXXX XXXXX - Date Code

Assembly Material


APM3054NV

www.anpec.com.tw2








16 A

IS* Diode Continuous Forward Current 2.2 A




TA=100°C 0.58 W




Min. Typ. Max. Unit




TJ=85°C - - 30 µA





mΩ

VSDa Diode Forward Voltage ISD=2.2A, VGS=0V - 0.75 1.3 V






- 2.8 -

nC


APM3054NV

www.anpec.com.tw3


Min. Typ. Max. Unit







pF






- 4 6

ns




APM3054NV

www.anpec.com.tw4

1E-4 1E-3 0.01 0.1 1 10 1001E-3

0.01

0.1

1

2


θJA : 85 oC/W

0.01

0.02

0.05

0.1

0.2

Single Pulse

Duty = 0.5

Typical Opearting Characteristics

Power Dissipation

Pto

t - P

ower

(W)


Drain Current


ID -

Dra

in C

urre

nt (A

)


Nor

mal

ized

Tra

nsie

nt T

herm

al R

esis

tanc

e


Safe Operation Area


ID -

Dra

in C

urre

nt (A

)

0 20 40 60 80 100 120 140 1600.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

TA=25oC

0 20 40 60 80 100 120 140 1600.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

TA=25oC,V

G=10V

0.01 0.1 1 10 1000.01

0.1

1

10

50

1ms

TA=25oC

Rds(o

n) Li

mit

1s

10ms

300µs

100ms

DC


APM3054NV

www.anpec.com.tw5


ID -

Dra

in C

urre

nt (A

)


RD

S(O

N) - O

n - R

esis

tanc

e (m

Ω)





ID -

Dra

in C

urre

nt (A

)



Nor

mal

ized

Thr

esho

ld V

olta

ge

Typical Opearting Characteristics (Cont.)

0 1 2 3 4 50

2

4

6

8

10

12

14

16

3V

4V

5V

VGS

= 6, 7, 8, 9, 10V

0 1 2 3 4 5 6 7 80

2

4

6

8

10

12

14

16

Tj=125oC

Tj=25oC

Tj=-55oC

-50 -25 0 25 50 75 100 125 1500.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4IDS

=250µA

0 2 4 6 8 10 12 14 1610

20

30

40

50

60

70

80

90

100

110

120

VGS

=10V

VGS

=4.5V


APM3054NV

www.anpec.com.tw6


Nor

mal

ized

On

Res

ista

nce



IS -

Sou

rce

Cur

rent

(A)


C -

Cap

acita

nce

(pF)



VG

S -

Gat

e-so

urce

Vol

tage

(V)

Typical Opearting Characteristics (Cont.)

-50 -25 0 25 50 75 100 125 1500.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

RON

@Tj=25oC: 48mΩ

VGS

= 10V

IDS

= 4A

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.61

10

20

Tj=25oC

Tj=150oC

0 5 10 15 20 25 300

100

200

300

400

500

600

Frequency=1MHz

Ciss

Coss

Crss

0 2 4 6 8 10 12 14 16 180

1

2

3

4

5

6

7

8

9

10V

DS=15V

ID = 4A


APM3054NV

www.anpec.com.tw7

Package Information

SOT-223

AA2

VIEW A

0.25L


A1

D

E

e1

e

b2

E1

SEEVIEW A

c

b°

0

SYMBOL MIN. MAX.

1.80

0.02

0.66 0.84

2.90 3.10

0.23 0.33

0.10

6.70

A

A1

b

b2

c

D

E

E1

e

MILLIMETERS

A2 1.50 1.70

2.30 BSC

SOT-223

3.30 3.70

6.30 6.70

7.30

0.091 BSC

MIN. MAX.

INCHES

0.071

0.001

0.059 0.067

0.026 0.033

0.114 0.122

0.009 0.013

0.264

0.130 0.146

0.248 0.264

0.287

0.004

0

L 0.75 0.030

e1 4.60 BSC 0.181 BSC

°10°0 °10°0

Note : 1. Follow from JEDEC TO-261 AA. 2. Dimension D and E1 are determined at the outermost extremes of the plastic exclusive of mold flash, tie bar burrs, gate burrs, and interlead flash, but including any mismatch between the top and bottom of the plastic body.


APM3054NV

www.anpec.com.tw8


H

T1

A

d

A

E1

AB

W

F

T

P0OD0

BA0

P2

K0

B0

SECTION B-B

SECTION A-A

OD1

P1


320.0±2.00 50 MIN. 12.4+2.00 -0.00

13.0+0.50 -0.20

1.5 MIN. 20.2 MIN. 12.00±0.30 1.75±0.10 5.50±0.05

P0 P1 P2 D0 D1 T A0 B0 K0 SOT-223

4.00±0.10 8.00±0.10 2.00±0.50 1.5+0.10 -0.00 1.5 MIN. 0.6+0.00

-0.40 6.90±0.20 7.50±0.20 2.10±0.20

(mm)

Devices Per Unit




APM3054NV

www.anpec.com.tw9


SOT-223




t 25 C to Peak

tp

Ramp-up

tL

Ramp-downts

Preheat

Tsmax

Tsmin

TL

TP

25

Tem

per

atu

re

Time


°



APM3054NV

www.anpec.com.tw10



100°C 150°C

60-120 seconds

150°C 200°C

60-180 seconds










Volume mm3 350-2000

Volume mm3 >2000

<1.6 mm 260 +0°C* 260 +0°C* 260 +0°C* 1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C*




<350 Volume mm3

≥350 <2.5 mm 240 +0/-5°C 225 +0/-5°C ≥2.5 mm 225 +0/-5°C 225 +0/-5°C


Customer Service




Fax : 886-2-2917-3838


Copyright ANPEC Electronics Corp.Rev. A.4 - Jul., 2008

www.anpec.com.tw1


APM3055NG

Pin Description


Features

Applications

• 30V/12A,

RDS(ON)=75mΩ (typ.) @ VGS=10VRDS(ON)=100mΩ (typ.) @ VGS=4.5V




(RoHS Compliant) Top View of TO-263

N-Channel MOSFET

• Power Management in Desktop Computer or

DC/DC Converters

S

D

G


DG

S

APM3055N

Handling Code

Temperature Range

Package Code

Package Code G : TO-263Operating Junction Temperature Range C : -55 to 150 CHandling Code TR : Tape & ReelAssembly Material L : Lead Free Device G : Halogen and Lead Free Device

APM3055N G: APM3055NXXXXX

XXXXX - Date Code

Assembly Materialo


www.anpec.com.tw2

APM3055NG

Absolute Maximum Ratings


Common Ratings (TA=25°C Unless Otherwise Noted)





IS Diode Continuous Forward Current TC=25°C 8 A

Mounted on Large Heat Sink TC=25°C 48

IDP 300µs Pulse Drain Current Tested TC=100°C 48

TC=25°C 12* ID Continuous Drain Current

TC=100°C 12

A

TC=25°C 62.5 PD Maximum Power Dissipation

TC=100°C 25 W

RθJC Thermal Resistance-Junction to Case 2 °C/W

Mounted on PCB of 1in2 pad area TA=25°C 16

IDP 300µs Pulse Drain Current Tested TA=100°C 10

TA=25°C 4.3 ID Continuous Drain Current

TA=100°C 3.1

A

TA=25°C 2.8 PD Maximum Power Dissipation

TA=100°C 1.1 W

RθJA Thermal Resistance-Junction to Ambient 45 °C/W

Mounted on PCB of Minimum Footprint TA=25°C 14



TA=100°C 2

A

TA=25°C 2 PD Maximum Power Dissipation

TA=100°C 0.8 W

RθJA Thermal Resistance-Junction to Ambient 62.5 °C/W Notes:

* Current limited by bond wire.


www.anpec.com.tw3

APM3055NG


APM3055NG Symbol Parameter Test Conditions

Min. Typ. Max. Unit

Static BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 30 V

VDS=24V, VGS=0V 1 IDSS Zero Gate Voltage Drain Current

TJ=85°C 30 µA


IGSS Gate Leakage Current VGS=±20V, VDS=0V ±100 nA

VGS=10V, IDS=12A 75 100 RDS(ON)

a Drain-Source On-state Resistance VGS=4.5V, IDS=6A 100 200

mΩ

Diode VSD

a Diode Forward Voltage ISD=3A, VGS=0V 0.8 1.3 V

trr Reverse Recovery Time 20 ns


11 nC

Dynamicb RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 2.2 Ω

Ciss Input Capacitance 390

Coss Output Capacitance 65


VGS=0V, VDS=15V, Frequency=1.0MHz 35

pF

td(ON) Turn-on Delay Time 3 6

Tr Turn-on Rise Time 10 19

td(OFF) Turn-off Delay Time 15 28



2 5

ns

Gate Chargeb Qg Total Gate Charge 7.7 11

Qgs Gate-Source Charge 1.7



1.1

nC

Notes: a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing.


www.anpec.com.tw4

APM3055NG

Typical Characteristics

ID -

Dra

in C

urre

nt (A

)

Drain Current


Safe Operation Area




Power Dissipation

Pto

t - P

ower

(W)


ID -

Dra

in C

urre

nt (A

)

Nor

mal

ized

Tra

nsie

nt T

herm

al R

esis

tanc

e

0 20 40 60 80 100 120 140 160 1800

10

20

30

40

50

60

70

TC=25oC

0 20 40 60 80 100 120 140 1600

2

4

6

8

10

12

14

TC=25oC,V

G=10V

1E-4 1E-3 0.01 0.1 1 10 600.05

0.1

1

2


θJA : 45 oC/W

0.01

0.02

0.05

0.1

0.2

Single Pulse

Duty = 0.5

0.1 1 10 1000.1

1

10

100

300µs

Rds(on

) Lim

it

1s

TC=25oC

100ms

DC

1ms


www.anpec.com.tw5

APM3055NG

RD

S(O

N) -

On

- Res

ista

nce

(mΩ

)






ID -

Dra

in C

urre

nt (A

)




RD

S(O

N) -

On

- Res

ista

nce

(mΩ

)

Nor

mal

ized

Thr

esho

ld V

olta

ge

Typical Characteristics (Cont.)

3 4 5 6 7 8 9 1050

60

70

80

90

100

110

120

130

140

150

ID=12A

-50 -25 0 25 50 75 100 125 1500.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6IDS

=250µA

0.0 0.5 1.0 1.5 2.0 2.5 3.00

2

4

6

8

10

12

4V

3V

VGS

=5,6,7,8,9,10V

0 2 4 6 8 10 1220

40

60

80

100

120

140

160

VGS

= 4.5V

VGS

=10V


www.anpec.com.tw6

APM3055NG



Nor

mal

ized

On

Res

ista

nce


C -

Cap

acita

nce

(pF)

VSD - Source - Drain Voltage (V)


IS -

Sou

rce

Cur

rent

(A)



VG

S -

Gat

e - s

ourc

e V

olta

ge (V

)


-50 -25 0 25 50 75 100 125 1500.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

RON

@Tj=25oC: 75mΩ

VGS

= 10V

IDS

= 12A

0 5 10 15 20 25 300

50

100

150

200

250

300

350

400

450

500

550

Frequency=1MHz

Crss

Coss

Ciss

0 1 2 3 4 5 6 7 80

1

2

3

4

5

6

7

8

9

10V

DS= 15V

ID = 12A

0.0 0.4 0.8 1.2 1.6 2.00.1

1

10

20

Tj=25oC

Tj=150oC


www.anpec.com.tw7

APM3055NG

Package Information

TO-263-3

b2 e

L

VIEW A

0

0.25

GAUGE PLANE

A1

SEATING PLANE

SEE VIEW A

E

H

DL1

A

c2

b c

L2

E1

D1

YMBOL MIN. MAX.

4.83

0.00

1.14 1.78

0.38 0.74

1.14 1.65

0.25

6.00

A1

b2

cc2

D

D1

E

MILLIMETERS

b 0.51 0.99

2.54 BSC

TO263

9.65 11.43

6.22

0.100 BSC

MIN. MAX.

INCHES

0.190

0.000

0.020 0.039

0.045 0.070

0.015 0.029

0.045 0.065

0.236

0.380 0.450

0.245

4.06 0.160

0.010

E1

0.380

0.066

0.110

L2

L

L1

e

1.78

8.38 9.65

1.68

2.79 0.070

0.330

H 14.61 15.88 0.575 0.625

1.78 0.070

9.00

9.00

0.354

0.354

Note : Follow JEDEC TO-263 AB.

S

A

0 808θ o o o o


www.anpec.com.tw8

APM3055NG


Package Type Unit Quantity TO-263 Tape & Reel 800

Devices Per Unit


381.0±2.00 60 MIN. 24.4+2.00 -0.00

13.0+0.50 -0.20

1.5 MIN. 20.2 MIN. 24.0±0.30 1.75±0.10 11.5±0.10

P0 P1 P2 D0 D1 T A0 B0 K0 TO-263

4.0±0.10 16.0±0.10 2.0±0.10 1.5+0.10 -0.00 1.5 MIN. 0.6+0.00

-0.40 10.8±0.20 16.1±0.20 5.2±0.20

(mm)

H

T1

A

d

A

E1

AB

W

F

T

P0OD0

BA0

P2

K0

B0

SECTION B-B

SECTION A-A

OD1

P1


www.anpec.com.tw9

APM3055NG



Classification Reflow ProfilesProfile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly

Average ramp-up rate (TL to TP) 3°C/second max. 3°C/second max.


100°C 150°C

60-120 seconds

150°C 200°C

60-180 seconds








t 25 C to Peak

tp

Ramp-up

tL

Ramp-downts

Preheat

Tsmax

Tsmin

TL

TP

25

Tem

per

atur

e

Time


°


www.anpec.com.tw10

APM3055NG


<350 Volume mm3

350-2000 Volume mm3

>2000 <1.6 mm 260 +0°C* 260 +0°C* 260 +0°C*

1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C* ≥2.5 mm 250 +0°C* 245 +0°C* 245 +0°C*



<350 Volume mm3

≥350 <2.5 mm 240 +0/-5°C 225 +0/-5°C ≥2.5 mm 225 +0/-5°C 225 +0/-5°C

Classification Reflow Profiles (Cont.)

Customer Service





Copyright ANPEC Electronics Corp.Rev. A.3 - Apr., 2009

www.anpec.com.tw1


APM4008NG

Pin Description


Features

Applications

• 40V/60A,

RDS(ON)=6.5mΩ (typ.) @ VGS=10VRDS(ON)=10mΩ (typ.) @ VGS=4.5V



• Lead Free and Green Devices Available (RoHS

Compliant)

• Power Management in LCD monitor/TV

N-Channel MOSFET

Top View of TO-263


G

S

D

APM4008N

Handling Code

Temperature Range

Package Code

Package Code G : TO-263Operating Junction Temperature Range C : -55 to 150 oCHandling Code TR : Tape & ReelAssembly Material G : Halogen and Lead Free Device

APM4008N G : APM4008NXXXXX

XXXXX - Date Code

Assembly Material

G D

S


www.anpec.com.tw2

APM4008NG





BVDS (Avalanche)* Drain-Source Avalanche Voltage (maximum) 45 V


TJ Maximum Junction Temperature 150 °C

TSTG Storage Temperature Range -55 to 150 °C IS Diode Continuous Forward Current 20 A

TC=25°C 150 IDP 300µs Pulse Drain Current Tested

TC=100°C 80 A

EAS** Drain-Source Avalanche Energy 150 mJ

Mounted on Large Heat Sink

TC=25°C 60*** ID Continuous Drain Current

TC=100°C 45 A


TC=100°C 25 W


Mounted on PCB of 1in2 pad area

TA=25°C 15 ID Continuous Drain Current

TA=100°C 9.5 A


TA=100°C 1.1 W


Mounted on PCB of Minimum Footprint


TA=100°C 8 A


TA=100°C 0.8 W

RθJA Thermal Resistance-Junction to Ambient 62.5 °C/W

Notes: * Avalanche single pulse test, and avalanche period time tav≤100µs, duty<1%. ** Avalanche test condition: TJ = 25oC, L=0.5mH, IAS= 25A, VDD=30V, and VGS=10V. *** Current is limited by bond wire.


www.anpec.com.tw3

APM4008NG

Electrical Characteristics (TA = 25°C)

APM4008NG Symbol Parameter Test Conditions

Min. Typ. Max. Unit




TJ=85°C - - 30 µA

VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 1.3 2 3 V


VGS=10V, IDS=20A - 6.5 8 RDS(ON)

a Drain-Source On-state Resistance VGS=4.5V, IDS=10A - 10 13.5

mΩ

Diode Characteristics







- 14 -

nC







pF


tr Turn-on Rise Time - 16 30


tf Turn-off Fall Time


- 18 33

ns



- 29 - nC



www.anpec.com.tw4

APM4008NG


Power Dissipation

Pto

t - P

ower

(W)


ID -

Dra

in C

urre

nt (A

)

Drain Current


Safe Operation Area


ID -

Dra

in C

urre

nt (A

)



Nor

mal

ized

Effe

ctiv

e Tr

ansi

ent

0 20 40 60 80 100 120 140 160 1800

10

20

30

40

50

60

70

TA=25oC

0 20 40 60 80 100 120 140 1600

20

40

60

80

TC=25oC,V

G=10V

1E-4 1E-3 0.01 0.1 1 10 400.02

0.1

1

2


θJA : 45 oC/W

0.01

0.02

0.05

0.1

0.2

Single Pulse

Duty = 0.5

0.01 0.1 1 10 1000.1

1

10

100

300

10ms

300µs

Rds(on

) Lim

it

1s

TC=25oC

100ms

DC

1ms


www.anpec.com.tw5

APM4008NG


ID -

Dra

in C

urre

nt (A

)


RD

S(O

N) - O

n - R

esis

tanc

e (m

Ω)




RD

S(O

N) -

On

- Res

ista

nce

(mΩ

)



Nor

mal

ized

Thr

esho

ld V

olta

ge


0.0 0.5 1.0 1.5 2.0 2.5 3.00

30

60

90

120

150

4.5V

4V

5VVGS

=6,7,8,9,10V

-50 -25 0 25 50 75 100 125 1500.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8IDS

=250µA

3 4 5 6 7 8 9 100

5

10

15

20

25

30

ID=20A

0 25 50 75 100 125 1500

3

6

9

12

15

VGS

= 4.5V

VGS

=10V



www.anpec.com.tw6

APM4008NG


Nor

mal

ized

On

Res

ista

nce

Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V)


IS -

Sou

rce

Cur

rent

(A)


C -

Cap

acita

nce

(pF)



VG

S -

Gat

e-so

urce

Vol

tage

(V)

0 5 10 15 20 25 300

400

800

1200

1600

2000

2400

2800

3200

3600

4000

Frequency=1MHz

CrssCoss

Ciss

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.60.1

1

10

100150

Tj=150oC

Tj=25oC

0 10 20 30 40 50 600

1

2

3

4

5

6

7

8

9

10V

DS= 15V

ID= 20A

-50 -25 0 25 50 75 100 125 1500.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

RON

@Tj=25oC: 6.5mΩ

VGS

= 10V

IDS

= 20A



www.anpec.com.tw7

APM4008NG

Avalanche Test Circuit and Waveforms

DUT

0.01Ωtp

VDD

VDSL

IL

RG

EAS

VDD

tAV

IAS

VDS

tp VDSX(SUS)


VDD

RD

DUT

VGS

VDS

RG

tp

td(on) tr td(off) tf

VGS

VDS90%

10%


www.anpec.com.tw8

APM4008NG

Package Information

TO-263

b2 e

L

VIEW A

0

0.25

GAUGE PLANEA

1SEATING PLANE

SEE VIEW A

E

H

DL1

A

c2

b c

L2

E1

D1

YMBOL MIN. MAX.

4.83

0.00

1.14 1.78

0.38 0.74

1.14 1.65

0.25

6.00

A1

b2

cc2

D

D1

E

MILLIMETERS

b 0.51 0.99

2.54 BSC

TO-263

9.65 11.43

6.22

0.100 BSC

MIN. MAX.

INCHES

0.190

0.000

0.020 0.039

0.045 0.070

0.015 0.029

0.045 0.065

0.236

0.380 0.450

0.245

4.06 0.160

0.010

E1

0.380

0.066

0.110

L2

L

L1

e

1.78

8.38 9.65

1.68

2.79 0.070

0.330

H 14.61 15.88 0.575 0.625

1.78 0.070

9.00

9.00

0.354

0.354


S

A

0 808θ o o o o


www.anpec.com.tw9

APM4008NG


330.0±2.00 50 MIN. 24.4+2.00 -0.00

13.0+0.50 -0.20

1.5 MIN. 20.2 MIN. 24.0±0.30 1.75±0.10 11.5±0.10

P0 P1 P2 D0 D1 T A0 B0 K0 TO-263

4.0±0.10 16.0±0.10 2.0±0.10 1.5+0.10 -0.00 1.5 MIN. 0.6+0.00

-0.40 10.8±0.20 16.1±0.20 5.2±0.20

(mm)


Package Type Unit Quantity TO- 263 Tape & Reel 800

Devices Per Unit

H

T1

A

d

A

E1

AB

W

F

T

P0OD0

BA0

P2

K0

B0

SECTION B-B

SECTION A-A

OD1

P1


www.anpec.com.tw10

APM4008NG

Classification Profile

Taping Direction InformationTO-263



www.anpec.com.tw11

APM4008NG

Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly

Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts)

100 °C 150 °C

60-120 seconds

150 °C 200 °C

60-120 seconds

Average ramp-up rate (Tsmax to TP) 3 °C/second max. 3°C/second max.

Liquidous temperature (TL) Time at liquidous (tL)

183 °C 60-150 seconds

217 °C 60-150 seconds

Peak package body Temperature (Tp)*

See Classification Temp in table 1 See Classification Temp in table 2

Time (tP)** within 5°C of the specified classification temperature (Tc)

20** seconds 30** seconds

Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max.

Time 25°C to peak temperature 6 minutes max. 8 minutes max.

* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.


Table 2. Pb-free Process – Classification Temperatures (Tc)

Package Thickness

Volume mm3 <350

Volume mm3 350-2000

Volume mm3 >2000

<1.6 mm 260 °C 260 °C 260 °C 1.6 mm – 2.5 mm 260 °C 250 °C 245 °C

≥2.5 mm 250 °C 245 °C 245 °C

Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) Package

Thickness Volume mm3

<350 Volume mm3

≥350 <2.5 mm 235 °C 220 °C

≥2.5 mm 220 °C 220 °C


Test item Method Description SOLDERABILITY JESD-22, B102 5 Sec, 245°C HOLT JESD-22, A108 1000 Hrs, Bias @ 125°C PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C TCT JESD-22, A104 500 Cycles, -65°C~150°C


www.anpec.com.tw12

APM4008NG

Customer Service




Fax : 886-2-2917-3838



www.anpec.com.tw1


APM7512NG

Pin Description


Features

Applications

• 75V/75A ,

RDS(ON)= 9.1mΩ (typ.) @ VGS= 10V

• Avalanche Rated


• Lead Free and Green Devices Available (RoHS

Compliant)

N-Channel MOSFET

Top View of TO-263

• Power Management for Inverter Systems


G

S

D

G

D

S

APM7512N

Handling Code

Temperature Range

Package Code

Package Code G : TO-263Operating Junction Temperature Range C : -55 to 175 CHandling Code TR : Tape & ReelAssembly Material L : Lead Free Device G : Halogen and Lead Free Device

APM7512N G : APM7512NXXXXX

XXXXX - Date Code

Assembly Material°


www.anpec.com.tw2

APM7512NG







TSTG Storage Temperature Range -55 to 175 °C IS Diode Continuous Forward Current 40 A

TC=25°C 300* IDP 300µs Pulse Drain Current Tested

TC=100°C 200 A


TA=100°C 55 A


TA=100°C 75 W



Drain-Source Avalanche Ratings

EAS Avalanche Energy, Single Pulsed L=2mH 1 J

Note: * Pulse width limited by safe operating area.

Electrical Characteristics (TA = 25°C Unless Otherwise Noted)

APM7512NG Symbol Parameter Test Condition

Min. Typ. Max. Unit

Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 75 V


TJ=85°C 30 µA



RDS(ON) a Drain-Source On-state Resistance VGS=10V, IDS=40A 9.1 12 mΩ

Diode Characteristics VSD



qrr Reverse Recovery Charge IDS=40A, dlSD/dt=100A/µs

193 nC


www.anpec.com.tw3

APM7512NG


APM7512NG Symbol Parameter Test Condition

Min. Typ. Max. Unit

Dynamic Characteristics b RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 1.5 Ω





pF


tr Turn-on Rise Time 15 28




34 62

ns

Gate Charge Characteristics b Qg Total Gate Charge 69 97




22

nC

Notes：

a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing.


www.anpec.com.tw4

APM7512NG


Power Dissipation

Pto

t - P

ower

(W)


ID -

Dra

in C

urre

nt (A

)

Drain Current


Safe Operation Area


ID -

Dra

in C

urre

nt (A

)

Nor

mal

ized

Effe

ctiv

e Tr

ansi

ent



1E-4 1E-3 0.01 0.1 1 10 401E-3

0.01

0.1

1

2


θJA : 45 oC/W

0.01

0.02

0.05

0.1

0.2

Single Pulse

Duty = 0.5

0 20 40 60 80 100 120 140 160 1800

20

40

60

80

100

120

140

160

TC=25oC

0.01 0.1 1 10 100 3000.1

1

10

100

500

1ms

1s

Rds(o

n) Li

mit

TC=25oC

10ms

100ms

DC

0 20 40 60 80 100 120 140 160 1800

10

20

30

40

50

60

70

80

TC=25oC,V

G=10V


www.anpec.com.tw5

APM7512NG


ID -

Dra

in C

urre

nt (A

)


RD

S(O

N) - O

n - R

esis

tanc

e (m

Ω)





RD

S(O

N) -

On

- Res

ista

nce

(mΩ

)




Nor

mal

ized

Thr

esho

ld V

olta

ge

0.0 0.5 1.0 1.5 2.0 2.5 3.00

20

40

60

80

100

120

140

160

180

2009V

8V

7V

5V

6V

VGS

= 10V

0 20 40 60 80 1006

7

8

9

10

11

12

13

VGS

=10V

-50 -25 0 25 50 75 100 125 150 1750.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

IDS

=250µA

4 5 6 7 8 9 106

8

10

12

14

16

18

20

IDS

=40A


www.anpec.com.tw6

APM7512NG

VSD - Source-Drain Voltage (V)


IS -

Sou

rce

Cur

rent

(A)


C -

Cap

acita

nce

(pF)



VG

S -

Gat

e-so

urce

Vol

tage

(V)



Nor

mal

ized

On

Res

ista

nce


0 5 10 15 20 25 30 35 400

500

1000

1500

2000

2500

3000

3500

4000

4500

5000

5500

Frequency=1MHz

CrssCoss

Ciss

-50 -25 0 25 50 75 100 125 150 1750.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

RON

@Tj=25oC: 9.1mΩ

VGS

= 10V I

DS = 40A

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.60.6

1

10

100

200

Tj=175oC

Tj=25oC

0 10 20 30 40 50 60 700

1

2

3

4

5

6

7

8

9

10V

DS= 30V

IDS

= 40A


www.anpec.com.tw7

APM7512NG

Package Information

TO-263-3

b2 e

L

VIEW A

0

0.25

GAUGE PLANE

A1

SEATING PLANE

SEE VIEW A

E

H

DL1

A

c2

b c

L2

E1

D1

YMBOL MIN. MAX.

4.83

0.00

1.14 1.78

0.38 0.74

1.14 1.65

0.25

6.00

A1

b2

cc2

D

D1

E

MILLIMETERS

b 0.51 0.99

2.54 BSC

TO263

9.65 11.43

6.22

0.100 BSC

MIN. MAX.

INCHES

0.190

0.000

0.020 0.039

0.045 0.070

0.015 0.029

0.045 0.065

0.236

0.380 0.450

0.245

4.06 0.160

0.010

E1

0.380

0.066

0.110

L2

L

L1

e

1.78

8.38 9.65

1.68

2.79 0.070

0.330

H 14.61 15.88 0.575 0.625

1.78 0.070

9.00

9.00

0.354

0.354


S

A

0 808θ o o o o


www.anpec.com.tw8

APM7512NG



381.0±2.00 60 MIN. 24.4+2.00 -0.00

13.0+0.50 -0.20

1.5 MIN. 20.2 MIN. 24.0±0.30 1.75±0.10 11.5±0.10

P0 P1 P2 D0 D1 T A0 B0 K0 TO-263

4.0±0.10 16.0±0.10 2.0±0.10 1.5+0.10 -0.00 1.5 MIN. 0.6+0.00

-0.40 10.8±0.20 16.1±0.20 5.2±0.20

H

T1

A

d

A

E1

AB

W

F

T

P0OD0

BA0

P2

K0

B0

SECTION B-B

SECTION A-A

OD1

P1

Package Type Unit Quantity TO- 263 Tape & Reel 1000

Devices Per Unit


www.anpec.com.tw9

APM7512NG






100°C 150°C

60-120 seconds

150°C 200°C

60-180 seconds








t 25 C to Peak

tp

Ramp-up

tL

Ramp-downts

Preheat

Tsmax

Tsmin

TL

TP

25

Tem

per

atu

re

Time


°


www.anpec.com.tw10

APM7512NG


<350 Volume mm3

350-2000 Volume mm3

>2000 <1.6 mm 260 +0°C* 260 +0°C* 260 +0°C*

1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C* ≥2.5 mm 250 +0°C* 245 +0°C* 245 +0°C*



<350 Volume mm3

≥350 <2.5 mm 240 +0/-5°C 225 +0/-5°C ≥2.5 mm 225 +0/-5°C 225 +0/-5°C


Customer Service





Copyright ANPEC Electronics Corp.Rev. B.2 - Jun., 2006

www.anpec.com.tw1


APM2506NUB

Pin Description


Features

Applications

• 25V/60A ,

RDS(ON)=4.8mΩ(typ.) @ VGS=10V RDS(ON)=7mΩ(typ.) @ VGS=4.5V


• Avalanche Rated


• Lead Free Available (RoHS Compliant)


DC/DC Converters

Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin platetermination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldieringoperations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C

for MSL classification at lead-free peak reflow temperature.

°

APM2506N

Handling CodeTemp. RangePackage Code

Package Code UB : TO-251Operating Junction Temp. Range C : -55 to 150 CHandling Code PB : Plastic BagLead Free Code L : Lead Free Device Blank : Original Device

APM2506N UB : APM2506NXXXXX

XXXXX - Date Code

Lead Free Code

Top View of TO-251

N-Channel MOSFET

G

S

D

1 2 3

SDG


www.anpec.com.tw2

APM2506NUB



Common Ratings (TA = 25°C Unless Otherwise Noted)




TSTG Storage Temperature Range -55 to 150 °C IS Diode Continuous Forward Current TC=25°C 40 A



A


TC=100°C 50 A

TC=25°C 50 PD Maximum Power Dissipation

TC=100°C 20 W

RθJC Thermal Resistance-Junction to Case 2.5 °C/W



A


TA=100°C 5.5 A


TA=100°C 0.25 W

RθJA Thermal Resistance-Junction to Ambient 100 °C/W Note: * Current limited by bond wire.


www.anpec.com.tw3

APM2506NUB


Notes:a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%.b : Guaranteed by design, not subject to production testing.

APM2506NUB Symbol Parameter Test Condition

Min. Typ. Max. Unit

Drain-Source Avalanche Ratings EAS Drain-Source Avalanche Energy ID=20A, L=0.5mH 100 mJ


IDSS Zero Gate Voltage Drain Current VDS=20V, VGS=0V 1 µA



VGS=10V, IDS=40A 4.8 6 RDS(ON)


mΩ



trrb Reverse Recovery Time 30 ns

Qrrb Reverse Recovery Charge

ISD=10A, dISD/dt =100A/µs 14 nC

Dynamic Characteristics b RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 1.0 2.1 Ω





pF

td(ON) Turn-on Delay Time 19

Tr Turn-on Rise Time 20

td(OFF) Turn-off Delay Time 62



43

ns

Gate Charge Characteristics b Qg Total Gate Charge 37.5 56




21

nC


www.anpec.com.tw4

APM2506NUB

1E-4 1E-3 0.01 0.1 1 10 1001E-3

0.01

0.1

1

2

Mounted on minimum padR

θJA :100oC/W

0.01

0.02

0.05

0.1

0.2

Single Pulse

Duty = 0.5


Power Dissipation

Pto

t - P

ower

(W)


ID -

Dra

in C

urre

nt (A

)

Drain Current


Safe Operation Area


ID -

Dra

in C

urre

nt (A

)



0 20 40 60 80 100 120 140 160 1800

10

20

30

40

50

60

TC=25oC

0.1 1 10 700.1

1

10

100

300

Rds(on

) Lim

it

1s

TC=25oC

10ms

100ms

DC

1ms

Nor

mal

ized

Tra

nsie

nt T

herm

al R

esis

tanc

e

0 20 40 60 80 100 120 140 160 1800

10

20

30

40

50

60

70

TC=25oC, V

G=10V


www.anpec.com.tw5

APM2506NUB


ID -

Dra

in C

urre

nt (A

)


RD

S(O

N) - O

n - R

esis

tanc

e (m

Ω)



VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)


Nor

mal

ized

Thr

esho

ld V

lota

ge


0.0 0.4 0.8 1.2 1.6 2.00

20

40

60

80

100

3V

2.5V

VGS

=3.5,4,5,6,7,8,9,10V

-50 -25 0 25 50 75 100 125 1500.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

IDS

=250µA


RD

S(O

N) - O

n - R

esis

tanc

e (m

Ω)

0 20 40 60 80 1000

2

4

6

8

10

12

VGS

=4.5V

VGS

=10V

1 2 3 4 5 6 7 8 9 102

4

6

8

10

12

14

ID= 40A


www.anpec.com.tw6

APM2506NUB


Nor

mal

ized

On

Res

ista

nce



IS -

Sou

rce

Cur

rent

(A)


C -

Cap

acita

nce

(pF)



VG

S -

Gat

e-so

urce

Vol

tage

(V)


-50 -25 0 25 50 75 100 125 1500.00

0.25

0.50

0.75

1.00

1.25

1.50

1.75

2.00

RON

@Tj=25oC: 4.8mΩ

VGS

= 10V

IDS

= 40A

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

1

10

100

Tj=150oC

Tj=25oC

0 5 10 15 20 250

1000

2000

3000

4000

5000

Frequency=1MHz

CrssCoss

Ciss

0 10 20 30 40 50 600

1

2

3

4

5

6

7

8

9

10V

DS=15V

ID = 40A


www.anpec.com.tw7

APM2506NUB


Switching Time Test Circuit and Waveforms

td(on) tr td(off) t f

V GS

V DS

90%

10%

EAS

V DD

tAV

IAS

V DS

tpV DSX(SUS)

DUT

0.01Ωtp

V DD

V DSL

IL

RG

V DD

RD

DUT

V GS

V DS

RG

tp


www.anpec.com.tw8

APM2506NUB

TO-251

Millimeters Inches Dim Min. Max. Min. Max.

A 2.20 2.40 0.087 0.094 A1 1.02 1.27 0.040 0.050 b 0.50 0.88 0.020 0.035 b2 5.20 5.46 0.205 0.215 C 0.40 0.60 0.016 0.024 C1 0.40 0.60 0.016 0.024 D 5.40 6.20 0.213 0.244 D1 5.30 -- 0.209 -- E 6.35 6.70 0.250 0.264 E1 4.40 5.40 0.173 0.213 e1 4.50 4.70 0.177 0.185 H 12.90 15.25 0.508 0.600

b2

E

D

H

E1

D1

b

e1

CA1

E1

D1

A

C1

Packaging Information


www.anpec.com.tw9

APM2506NUB

Physical Specifications

t 25 C to Peak

tp

Ramp-up

tL

Ramp-down

tsPreheat

Tsmax

Tsmin

TL

TP

25

Te

mp

era

ture

Time


°

Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.





100°C 150°C

60-120 seconds

150°C 200°C

60-180 seconds




Peak/Classificatioon Temperature (Tp) See table 1 See table 2 Time within 5°C of actual Peak Temperature (tp)


Ramp-down Rate 6°C/second max. 6°C/second max. Time 25°C to Peak Temperature 6 minutes max. 8 minutes max. Notes: All temperatures refer to topside of the package .Measured on the body surface.


www.anpec.com.tw10

APM2506NUB

Test item Method DescriptionSOLDERABILITY MIL-STD-883D-2003 245°C,5 SECHOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°CPCT JESD-22-B, A102 168 Hrs, 100% RH, 121°CTST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles



<350 Volume mm3

350-2000 Volume mm3

>2000 <1.6 mm 260 +0°C* 260 +0°C* 260 +0°C*

1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C* ≥2.5 mm 250 +0°C* 245 +0°C* 245 +0°C*


Table 1. SnPb Entectic Process – Package Peak Reflow Temperatures Package Thickness Volume mm3

<350 Volume mm3

≥350 <2.5 mm 240 +0/-5°C 225 +0/-5°C ≥2.5 mm 225 +0/-5°C 225 +0/-5°C

Classification Reflow Profiles(Cont.)

Customer Service



Taipei Branch :7F, No. 137, Lane 235, Pac Chiao Rd.,Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.Tel : 886-2-89191368Fax : 886-2-89191369



www.anpec.com.tw1


APM2509NUB

Pin Description


Features

Applications

• 25V/50A ,

RDS(ON)=7.5mΩ(typ.) @ VGS=10V RDS(ON)=13mΩ(typ.) @ VGS=4.5V


• Avalanche Rated




DC/DC Converters

Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin platetermination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldieringoperations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020Cfor MSL classification at lead-free peak reflow temperature.

°

Top View of TO-251

N-Channel MOSFET

G

S

D

1 2 3

SDG

APM2509N


Package Code UB : TO-251Operating Junction Temp. Range C : -55 to 150 CHandling Code PB : Plastic BagLead Free Code L : Lead Free Device Blank : Original Device

APM2509N UB : APM2509NXXXXX

XXXXX - Date Code

Lead Free Code


www.anpec.com.tw2

APM2509NUB










A


TC=100°C 38 A


TC=100°C 20 W




A


TA=100°C 4 A


TA=100°C 0.25 W

RθJA Thermal Resistance-Junction to Ambient 100 °C/W Note: * Current limited by bond wire.


www.anpec.com.tw3

APM2509NUB


APM2509NUB Symbol Parameter Test Condition

Min. Typ. Max. Unit


EAS Avalanche Energy, Single Pulsed ID=15A, L=0.5mH 50 mJ



TJ=85°C 30 µA





mΩ




Qrrb Reverse Recovery Charge

ISD=10A, dISD/dt =100A/µs 6 nC






pF






16

ns


Qgs Gate-Source Charge 5



11

nC



www.anpec.com.tw4

APM2509NUB

1E-4 1E-3 0.01 0.1 1 10 1001E-3

0.01

0.1

1

2


θJA :100oC/W

0.01

0.02

0.05

0.1

0.2

Single Pulse

Duty = 0.5


Power Dissipation

Pto

t - P

ower

(W)


ID -

Dra

in C

urre

nt (A

)

Drain Current


Safe Operation Area


ID -

Dra

in C

urre

nt (A

)

Nor

mal

ized

Tra

nsie

nt T

herm

al R

esis

tanc

e



0 20 40 60 80 100 120 140 160 1800

10

20

30

40

50

60

TC=25oC

0.1 1 10 700.1

1

10

100

300

1s

10ms

100ms

DC

Rds(on

) Lim

it

Tc=25oC

0 20 40 60 80 100 120 140 160 1800

10

20

30

40

50

60

TC=25oC,V

G=10V


www.anpec.com.tw5

APM2509NUB

-50 -25 0 25 50 75 100 125 1500.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

IDS

=250µA


ID -

Dra

in C

urre

nt (A

)


RD

S(O

N) - O

n - R

esis

tanc

e (m

Ω)



VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)



Nor

mal

ized

Thr

esho

ld V

olta

ge

0 20 40 60 80 1002

4

6

8

10

12

14

16

18

20

22

VGS

=10V

VGS

=4.5V

0.0 0.4 0.8 1.2 1.6 2.00

10

20

30

40

50

60

70

80

90

100

3.5V

3V

2.5V

VGS

=4,5,6,7,8,9,10V


RD

S(O

N) -

On

- Res

ista

nce

(mΩ

)

0 1 2 3 4 5 6 7 8 9 104

6

8

10

12

14

16

18

ID= 30A


www.anpec.com.tw6

APM2509NUB


Nor

mal

ized

On

Res

ista

nce



IS -

Sou

rce

Cur

rent

(A)


C -

Cap

acita

nce

(pF)



VG

S -

Gat

e-so

urce

Vol

tage

(V)


-50 -25 0 25 50 75 100 125 1500.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

VGS

= 10V

IDS

= 30A

RON

@Tj=25oC: 7.5mΩ

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.40.1

1

10

40

Tj=25oC

Tj=150oC

0 5 10 15 20 250

500

1000

1500

2000

2500

3000

Frequency=1MHz

Crss

Coss

Ciss

0 5 10 15 20 25 30 350

1

2

3

4

5

6

7

8

9

10V

DS=15V

ID = 30A


www.anpec.com.tw7

APM2509NUB



td(on) tr td(off) t f

V GS

V DS

90%

10%

EAS

V DD

tAV

IAS

V DS

tpV DSX(SUS)

DUT

0.01Ωtp

V DD

V DSL

IL

RG

V DD

RD

DUT

V GS

V DS

RG

tp


www.anpec.com.tw8

APM2509NUB

TO-251


A 2.20 2.40 0.087 0.094 A1 1.02 1.27 0.040 0.050 b 0.50 0.88 0.020 0.035 b2 5.20 5.46 0.205 0.215 C 0.40 0.60 0.016 0.024 C1 0.40 0.60 0.016 0.024 D 5.40 6.20 0.213 0.244 D1 5.30 -- 0.209 -- E 6.35 6.70 0.250 0.264 E1 4.40 5.40 0.173 0.213 e1 4.50 4.70 0.177 0.185 H 12.90 15.25 0.508 0.600

b2

E

D

H

E1

D1

b

e1

CA1

E1

D1

A

C1

Packaging Information


www.anpec.com.tw9

APM2509NUB


t 25 C to Peak

tp

Ramp-up

tL

Ramp-down

tsPreheat

Tsmax

Tsmin

TL

TP

25

Te

mp

era

ture

Time


°

Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.





100°C 150°C

60-120 seconds

150°C 200°C

60-180 seconds




Peak/Classificatioon Temperature (Tp) See table 1 See table 2 Time within 5°C of actual Peak Temperature (tp)


Ramp-down Rate 6°C/second max. 6°C/second max. Time 25°C to Peak Temperature 6 minutes max. 8 minutes max. Notes: All temperatures refer to topside of the package .Measured on the body surface.


www.anpec.com.tw10

APM2509NUB

Test item Method DescriptionSOLDERABILITY MIL-STD-883D-2003 245°C,5 SECHOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°CPCT JESD-22-B, A102 168 Hrs, 100% RH, 121°CTST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles



<350 Volume mm3

350-2000 Volume mm3

>2000 <1.6 mm 260 +0°C* 260 +0°C* 260 +0°C*

1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C* ≥2.5 mm 250 +0°C* 245 +0°C* 245 +0°C*


Table 1. SnPb Entectic Process – Package Peak Reflow Temperatures Package Thickness Volume mm3

<350 Volume mm3

≥350 <2.5 mm 240 +0/-5°C 225 +0/-5°C ≥2.5 mm 225 +0/-5°C 225 +0/-5°C

Classification Reflow Profiles(Cont.)

Customer Service





Copyright ANPEC Electronics Corp.Rev. A.1 - Nov., 2006

www.anpec.com.tw1


APM2506NF

Pin Description


Features

Applications

• 25V/60A ,

RDS(ON)=4.2mΩ (typ.) @ VGS=10VRDS(ON)=6.5mΩ (typ.) @ VGS=4.5V


• Avalanche Rated



N-Channel MOSFET

Note: ANPEC lead-free products contain molding compounds and 100% matte tin plate termination finish;which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSLclassification at lead-free peak reflow temperature.

°

Top View of TO-220

• Power Management in Computer or Switching

Power Supply Systems

APM2506N

Handling Code

Temp. Range

Package Code

Package Code F : TO-220Operating Junction Temp. Range C : -55 to 150 CHandling Code TU : TubeLead Free Code L : Lead Free Device

APM2506N F : APM2506NXXXXX

XXXXX - Date Code

Lead Free Code

S

D

G


www.anpec.com.tw2

APM2506NF










TC=100°C 220 A


TC=100°C 55 A


TC=100°C 25 W



TA=25°C 60 IDP 300µs Pulse Drain Current Tested

TA=100°C 35 A


TA=100°C 9 A


TA=100°C 0.8 W

RθJA Thermal Resistance-Junction to Ambient 62.5 °C/W

Notes: * Current limited by bond wire.


www.anpec.com.tw3

APM2506NF


APM2506NF Symbol Parameter Test Condition

Min. Typ. Max. Unit


EAS Avalanche Energy, Single Pulsed ID=15A, VDD=20V 50 mJ


BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 25 V


TJ=85°C 30 µA



VGS=10V, IDS=40A 4.2 5.5 RDS(ON)

a Drain-Source On-state Resistance VGS=4.5V, IDS=20A 6.5 8.5

mΩ


VSDa Diode Forward Voltage ISD=10A, VGS=0V 0.7 1.1 V



14 nC

Dynamic Characteristicsb

RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 1.0 2.1 Ω





pF






43

ns

Gate Charge Characteristicsb

Qg Total Gate Charge 37.5 56




21

nC



www.anpec.com.tw4

APM2506NF


Power Dissipation

Pto

t - P

ower

(W)


ID -

Dra

in C

urre

nt (A

)

Drain Current


Safe Operation Area


ID -

Dra

in C

urre

nt (A

)

Nor

mal

ized

Tra

nsie

nt T

herm

al R

esis

tanc

e



1E-4 1E-3 0.01 0.1 1 10 1001E-3

0.01

0.1

1

2


θJA :62.5oC/W

0.01

0.02

0.05

0.1

0.2

Single Pulse

Duty = 0.5

0 20 40 60 80 100 120 140 160 1800

10

20

30

40

50

60

70

TC=25oC

0 20 40 60 80 100 120 140 160 1800

10

20

30

40

50

60

70

TC=25oC,V

G=10V

0.01 0.1 1 10 1001

10

100

500

Rds(

on) L

imit

1s

TC=25oC

10ms

100ms

DC


www.anpec.com.tw5

APM2506NF


ID -

Dra

in C

urre

nt (A

)


RD

S(O

N) - O

n - R

esis

tanc

e (m

Ω)



Gate-Source On Resistance


RD

S(O

N) -

On

- Res

ista

nce

(mΩ

)




Nor

mal

ized

Thr

esho

ld V

olta

ge

1 2 3 4 5 6 7 8 9 102

4

6

8

10

12

14

ID= 40A

-50 -25 0 25 50 75 100 125 1500.0

0.3

0.6

0.9

1.2

1.5

1.8

IDS

=250µA

0.0 0.4 0.8 1.2 1.6 2.00

10

20

30

40

50

60

3V

2.5V

VGS

=3.5,4,5,6,7,8,9,10V

0 10 20 30 40 50 601

2

3

4

5

6

7

8

9

10

VGS

=4.5V

VGS

=10V


www.anpec.com.tw6

APM2506NF


Nor

mal

ized

On

Res

ista

nce



IS -

Sou

rce

Cur

rent

(A)


C -

Cap

acita

nce

(pF)



VG

S -

Gat

e-so

urce

Vol

tage

(V)


-50 -25 0 25 50 75 100 125 1500.00

0.25

0.50

0.75

1.00

1.25

1.50

1.75

2.00

RON

@Tj=25oC: 4.2mΩ

VGS

= 10V

IDS

= 40A

0 5 10 15 20 250

1000

2000

3000

4000

5000

Frequency=1MHz

CrssCoss

Ciss

0 10 20 30 40 50 600

1

2

3

4

5

6

7

8

9

10V

DS=15V

ID = 40A

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.60.2

1

10

60

Tj=150oC

Tj=25oC


www.anpec.com.tw7

APM2506NF



DUT

0.01Ωtp

VDD

VDSL

IL

RG

EAS

VDD

tAV

IAS

VDS

tp VDSX(SUS)

VDD

RD

DUT

VGS

VDS

RG

tp


VGS

VDS90%

10%


www.anpec.com.tw8

APM2506NF

Package Information

TO-220


A 3.56 4.83 0.140 0.190 A1 0.51 1.40 0.020 0.055 A2 2.03 2.92 0.080 0.115 b 0.38 1.02 0.015 0.040

b2 1.14 1.78 0.045 0.070 c 0.36 0.61 0.014 0.024 D 14.22 16.51 0.560 0.650

D1 8.38 9.02 0.330 0.355 D2 12.19 12.88 0.480 0.507 E 9.65 10.67 0.380 0.420

E1 6.86 8.89 0.270 0.350 E2 - 0.76 - 0.030 e 2.54 BSC 0.100 BSC

H1 5.84 6.86 0.230 0.270 L 12.70 14.73 0.500 0.580

L1 - 6.35 - 0.250 P 3.53 4.09 0.139 0.161 Q 2.54 3.43 0.100 0.135

A2

L

L1

e

P

Q

D

H1

A

A1

c

D1

E1

D2

b

b2

E/2

E

E2


www.anpec.com.tw9

APM2506NF

Terminal Material Solder-Plated Copper (Solder Material : Sn) Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.


Reliability test program

Test item Method Description

SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC

HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @125°C

PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C

TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Customer Service





Copyright ANPEC Electronics Corp.Rev. A.1 - Aug., 2006

www.anpec.com.tw1


APM2509NF

APM2509N

Handling Code

Temp. Range

Package Code

Package Code F : TO-220Operating Junction Temp. Range C : -55 to 150 CHandling Code TU : TubeLead Free Code L : Lead Free Device


XXXXX - Date Code

Lead Free Code

Pin Description


Features

Applications

• 25V/50A ,



• Avalanche Rated



N-Channel MOSFET

Note: ANPEC lead-free products contain molding compounds and 100% matte tin plate termination finish;which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSLclassification at lead-free peak reflow temperature.

°

Top View of TO-220

S

D

G

• Power Management in Computer or SPS

Systems


www.anpec.com.tw2

APM2509NF










A


TC=100°C 43 A


TC=100°C 25 W




A


TA=100°C 7.5 A


TA=100°C 0.8 W

RθJA Thermal Resistance-Junction to Ambient 62.5 °C/W Notes：

* Current limited by bond wire.


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APM2509NF



Min. Typ. Max. Unit

Drain-Source Avalanche Ratings EAS Avalanche Energy, Single Pulsed ID=15A, VDD=20V 50 mJ



TJ=85°C 30 µA





mΩ





6 nC


RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 1.8 Ω





pF






16

ns





11

nC

Notes： a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing.


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APM2509NF


Power Dissipation

Pto

t - P

ower

(W)


ID -

Dra

in C

urre

nt (A

)

Drain Current


Safe Operation Area


ID -

Dra

in C

urre

nt (A

)

Nor

mal

ized

Tra

nsie

nt T

herm

al R

esis

tanc

e



0 20 40 60 80 100 120 140 160 1800

10

20

30

40

50

60

70

TC=25oC

0.1 1 10 701

10

100

400

1ms

1s

10ms

100ms

DC

Rds(o

n) L

imit

Tc=25oC

1E-4 1E-3 0.01 0.1 1 10 1001E-3

0.01

0.1

1

2


θJA :62.5oC/W

0.01

0.02

0.05

0.1

0.2

Single Pulse

Duty = 0.5

0 20 40 60 80 100 120 140 160 1800

10

20

30

40

50

60

TC=25oC,V

G=10V


www.anpec.com.tw5

APM2509NF


ID -

Dra

in C

urre

nt (A

)


RD

S(O

N) - O

n - R

esis

tanc

e (m

Ω)





RD

S(O

N) -

On

- Res

ista

nce

(mΩ

)




Nor

mal

ized

Thr

esho

ld V

olta

ge

0.0 0.5 1.0 1.5 2.0 2.5 3.00

10

20

30

40

50

60

70

80

90

100

3.5V

5V

4V

4.5V

2.5V

3V

VGS

=6,7,8,9,10V

0 20 40 60 80 1000

2

4

6

8

10

12

14

16

18

20

VGS

=10V

VGS

=4.5V

1 2 3 4 5 6 7 8 9 100

5

10

15

20

25

30

ID=30A

-50 -25 0 25 50 75 100 125 1500.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

IDS

=250µA


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APM2509NF


Nor

mal

ized

On

Res

ista

nce



IS -

Sou

rce

Cur

rent

(A)


C -

Cap

acita

nce

(pF)



VG

S -

Gat

e-so

urce

Vol

tage

(V)


0.0 0.4 0.8 1.2 1.6 2.00.1

1

10

100

Tj=150oC

Tj=25oC

-50 -25 0 25 50 75 100 125 1500.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

RON

@Tj=25oC: 7.5mΩ

VGS

= 10V

IDS

= 30A

0 5 10 15 20 250

300

600

900

1200

1500

1800

2100

2400

2700

Frequency=1MHz

CrssCoss

Ciss

0 5 10 15 20 25 30 350

1

2

3

4

5

6

7

8

9

10V

DS=15V

ID = 30A


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APM2509NF



DUT

0.01Ωtp

VDD

VDSL

IL

RG

EAS

VDD

tAV

IAS

VDS

tp VDSX(SUS)

VDD

RD

DUT

VGS

VDS

RG

tp


VGS

VDS90%

10%


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APM2509NF

Package Information

TO-220


A 3.56 4.83 0.140 0.190 A1 0.51 1.40 0.020 0.055 A2 2.03 2.92 0.080 0.115 b 0.38 1.02 0.015 0.040

b2 1.14 1.78 0.045 0.070 c 0.36 0.61 0.014 0.024 D 14.22 16.51 0.560 0.650

D1 8.38 9.02 0.330 0.355 D2 12.19 12.88 0.480 0.507 E 9.65 10.67 0.380 0.420

E1 6.86 8.89 0.270 0.350 E2 - 0.76 - 0.030 e 2.54 BSC 0.100 BSC

H1 5.84 6.86 0.230 0.270 L 12.70 14.73 0.500 0.580

L1 - 6.35 - 0.250 P 3.53 4.09 0.139 0.161 Q 2.54 3.43 0.100 0.135

A2

L

L1

e

P

Q

D

H1

A

A1

c

D1

E1

D2

b

b2

E/2

E

E2


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APM2509NF

Terminal Material Solder-Plated Copper (Solder Material : Sn) Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.


Reliability test program

Test item Method Description

SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC

HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @125°C

PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C

TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Customer Service





Copyright ANPEC Electronics Corp.Rev. A.1 - Sept., 2007

www.anpec.com.tw1


APM7512NF

Pin Description


Features

Applications

• 75V/80A ,

RDS(ON)= 9.1mΩ (typ.) @ VGS= 10V

• Avalanche Rated



N-Channel MOSFET

Note: ANPEC lead-free products contain molding compounds and 100% matte tin plate termination finish;which are fully compliant with RoHS and compatible with both SnPb and lead-free soldering operations. ANPEClead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classifica-tion at lead-free peak reflow temperature.

Top View of TO-220

S

D

G• Power Management for Inverter Systems

APM7512N

Handling Code

Temp. RangePackageCode

Package Code F : TO-220Operating Junction Temp. Range C : -55 to 175 CHandling Code PB : Plastic BagLead Free Code L : Lead Free Device


XXXXX - Date Code

Lead FreeCode °


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APM7512NF



Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 75




Mounted on Large Heat Sink IDP 300µs Pulse Drain Current Tested TC=25°C 300* A

TC=25°C 80 ID Continuous Drain Current

TC=100°C 75 A


TC=100°C 136 W



EAS Avalanche Energy, Single Pulsed L=2mH 1 J

Notes: * Pulse width limited by safe operating area.


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APM7512NF



Min. Typ. Max. Unit



TJ=85°C 30 µA



RDS(ON) a Drain-Source On-state Resistance VGS=10V, IDS=40A 9.1 12 mΩ





177 nC






pF






40 73

ns





25

nC



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APM7512NF

1E-4 1E-3 0.01 0.1 1 10 1001E-3

0.01

0.1

1

2


θJC :0.55oC/W

0.01

0.02

0.05

0.1

0.2

Single Pulse

Duty = 0.5


Power Dissipation

Pto

t - P

ower

(W)


ID -

Dra

in C

urre

nt (A

)

Drain Current


Safe Operation Area


ID -

Dra

in C

urre

nt (A

)

Nor

mal

ized

Tra

nsie

nt T

herm

al R

esis

tanc

e



0 20 40 60 80 100 120 140 160 180 2000

50

100

150

200

250

300

TC=25oC

0.01 0.1 1 10 100 3000.1

1

10

100

500

1s

Rds(o

n) Li

mit

TC=25oC

10ms

100ms

DC

0 20 40 60 80 100 120 140 160 180 2000

20

40

60

80

100

TC=25oC,V

G=10V


www.anpec.com.tw5

APM7512NF


ID -

Dra

in C

urre

nt (A

)


RD

S(O

N) - O

n - R

esis

tanc

e (m

Ω)





RD

S(O

N) -

On

- Res

ista

nce

(mΩ

)


4 5 6 7 8 9 106

8

10

12

14

16

18

20

22

ID=40A

0.0 0.5 1.0 1.5 2.0 2.5 3.00

20

40

60

80

100

120

140

160

180

2009V

8V

7V

5V

6V

VGS

= 10V

0 20 40 60 80 1006

7

8

9

10

11

12

13

VGS

=10V



Nor

mal

ized

Thr

esho

ld V

olta

ge

-50 -25 0 25 50 75 100 125 150 1750.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

IDS

=250µA


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APM7512NF

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.60.6

1

10

100

200

Tj=175oC

Tj=25oC

-50 -25 0 25 50 75 100 125 150 1750.00

0.25

0.50

0.75

1.00

1.25

1.50

1.75

2.00

2.25

2.50

RON

@Tj=25oC: 9.1mΩ

VGS

= 10V

IDS

= 40A



IS -

Sou

rce

Cur

rent

(A)


C -

Cap

acita

nce

(pF)



VG

S -

Gat

e-so

urce

Vol

tage

(V)


0 5 10 15 20 25 30 35 400

1000

2000

3000

4000

5000

6000

7000

Frequency=1MHz

Crss Coss

Ciss

0 10 20 30 40 50 60 70 800

1

2

3

4

5

6

7

8

9

10V

DS= 30V

ID= 40A


Nor

mal

ized

On

Res

ista

nce



www.anpec.com.tw7

APM7512NF



DUT

0.01Ωtp

VDD

VDSL

IL

RG

EAS

VDD

tAV

IAS

VDS

tp VDSX(SUS)

VDD

RD

DUT

VGS

VDS

RG

tp


VGS

VDS90%

10%


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APM7512NF

Package Information

TO-220

A2

L

L1

e

P

Q

D

H1

A

A1

c

D1

E1

D2

b

b2

E/2

E

E2

SYMBOL MIN. MAX.

4.83

0.51

1.14 1.780.36 0.61

14.22 16.51

1.40

12.19

A

A1

b2

cD

D1

D2E

MILLIMETERS

b 0.38 1.02

2.54 BSC

TO-220

9.65 10.67

6.86

0.100 BSC

MIN. MAX.

INCHES

0.190

0.020

0.015 0.040

0.045 0.070

0.014 0.024

0.560 0.650

0.480

0.380 0.420

0.270

3.56 0.140

0.055

E1

0.355

0.250

0.580

P

LL1

e

12.70

8.38 9.02

6.35

14.73 0.500

0.330

Q

H1 5.84 6.86 0.230 0.270

4.09 0.161

2.03A2 2.92 0.080 0.115

E2 0.76 0.030

12.88 0.507

0.3508.89

3.53 0.139

2.54 3.43 0.100 0.135


www.anpec.com.tw9

APM7512NF



Customer Service





Copyright ANPEC Electronics Corp.Rev. B.3 - Nov., 2009

www.anpec.com.tw1


APM4412K

Features

Applications

• Power Management in Notebook Computer,

Portable Equipment and Battery Powered Systems

Pin Description


N-Channel MOSFET

• 30V/12A,

RDS(ON) = 9mΩ (typ.) @ VGS = 10V RDS(ON) =12mΩ (typ.) @ VGS = 4.5V



• SOP-8 Package


Top View of SOP−8

SS

SG

DD

DD

Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina-tion finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirementsof IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” tomean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneousmaterial and total of Br and Cl does not exceed 1500ppm by weight).

APM4412


Package Code K : SOP-8Operating Junction Temperature Range C : -55 to 150 oCHandling Code TR : Tape & ReelAssembly Material G : Halogen and Lead Free Device

APM4412 K : APM4412XXXXX XXXXX - Date Code

Assembly Material

G

S

D DDD

SS


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APM4412K






TA=25°C 12 ID

a Continuous Drain Current (VGS=10V) TA=70°C 9

IDMa 300µs Pulsed Drain Current (VGS=10V) 45

A

ISa Diode Continuous Forward Current 2

IARb Avalanche Current 16.5

A

EARb Repetitive Avalanche Energy (L=0.3mH) 40 mJ



TA=25°C 2.5 PD* Maximum Power Dissipation

TA=70°C 1.6 W

RθJAa,c Thermal Resistance-Junction to Ambient T≤10s 50

RθJL Thermal Resistance-Junction to Lead Steady State 25 °C/W

Note a：Surface Mounted on 1in2 pad area, t ≤ 10sec. Note b：UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature TJ=25oC). Note c：Maximum under Steady State conditions is 75°C/W.

APM4412K Symbol Parameter Test Conditions

Min. Typ. Max. Unit




TJ=85°C - - 30 µA




d Drain-Source On-state Resistance VGS=4.5V, IDS=8A - 12 16

mΩ

VSD d Diode Forward Voltage ISD=2.3A, VGS=0V - 0.75 1.3 V

Gate Charge Characteristics e





- 8 -

nC


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APM4412K



Min. Typ. Max. Unit

Dynamic Characteristics e






pF






- 12 23

ns


Qrr Reverse Recovery Charge ISD=12A, dISD/dt =100A/µs

- 5 - nC

Note d : Pulse test ; pulse width≤300µs, duty cycle≤2%. Note e : Guaranteed by design, not subject to production testing.


www.anpec.com.tw4

APM4412K


ID -

Dra

in C

urre

nt (A

)

Drain Current


Safe Operation Area


Nor

mal

ized

Tra

nsie

nt T

herm

al R

esis

tanc

e



Power Dissipation

Pto

t - P

ower

(W)


ID -

Dra

in C

urre

nt (A

)

0 20 40 60 80 100 120 140 1600

2

4

6

8

10

12

14

TA=25oC,V

G=10V

1E-4 1E-3 0.01 0.1 1 10 301E-3

0.01

0.1

1

2


θJA : 50 oC/W

0.01

0.02

0.05

0.1

0.2

Single Pulse

Duty = 0.5

0 20 40 60 80 100 120 140 1600.0

0.5

1.0

1.5

2.0

2.5

3.0

TA=25oC

0.01 0.1 1 10 1000.01

0.1

1

10

100

300usRds(on

) Lim

it

1s

TA=25oC

10ms

1ms

100ms

DC


www.anpec.com.tw5

APM4412K

RD

S(O

N) - O

n - R

esis

tanc

e (m

Ω)






ID -

Dra

in C

urre

nt (A

)




ID -

Dra

in C

urre

nt (A

)

Nor

mal

ized

Thr

esho

ld V

olta

ge


0.0 0.5 1.0 1.5 2.0 2.5 3.00

5

10

15

20

25

30

35

40

45

3.5V

3V

VGS

= 4,5,6,7,8,9,10V

0 9 18 27 36 452

4

6

8

10

12

14

16

18

20

VGS

=10V

VGS

=4.5V

0 1 2 3 4 5 60

5

10

15

20

25

30

35

40

45

Tj=125oC

Tj=25oC

Tj=-55oC

-50 -25 0 25 50 75 100 125 1500.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

IDS

=250µA


www.anpec.com.tw6

APM4412K



Nor

mal

ized

On

Res

ista

nce


C -

Cap

acita

nce

(pF)



IS -

Sou

rce

Cur

rent

(A)



VG

S -

Gat

e - s

ourc

e V

olta

ge (V

)


-50 -25 0 25 50 75 100 125 1500.00

0.25

0.50

0.75

1.00

1.25

1.50

1.75

2.00

RON

@Tj=25oC: 9mΩ

VGS

= 10V

IDS

= 12A

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.40.5

1

10

50

Tj=150oC

Tj=25oC

0 5 10 15 20 250

1

2

3

4

5

6

7

8

9

10V

DS= 15V

ID = 12A

0 5 10 15 20 25 300

300

600

900

1200

1500

1800

2100

2400

Frequency=1MHz

CrssCoss

Ciss


www.anpec.com.tw7

APM4412K

SOP-8

Package Information

D

e

EE1

SEE VIEW A

cb

h X

45°

A

A1

A2

L

VIEW A0.

25

SEATING PLANEGAUGE PLANE

Note: 1. Follow JEDEC MS-012 AA. 2. Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 6 mil per side. 3. Dimension “E” does not include inter-lead flash or protrusions. Inter-lead flash and protrusions shall not exceed 10 mil per side.

SYMBOL MIN. MAX.

1.75

0.10

0.17 0.25

0.25

A

A1

c

D

E

E1

e

h

L

MILLIMETERS

b 0.31 0.51

SOP-8

0.25 0.50

0.40 1.27

MIN. MAX.

INCHES

0.069

0.004

0.012 0.020

0.007 0.010

0.010 0.020

0.016 0.050

0

0.010

1.27 BSC 0.050 BSC

A2 1.25 0.049

0° 8 ° 0° 8 °

3.80

5.80

4.80

4.00

6.20

5.00 0.189 0.197

0.228 0.244

0.150 0.157


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APM4412K


330.0±2.00 50 MIN. 12.4+2.00 -0.00

13.0+0.50 -0.20

1.5 MIN. 20.2 MIN. 12.0±0.30 1.75±0.10 5.5±0.05

P0 P1 P2 D0 D1 T A0 B0 K0 SOP-8

4.0±0.10 8.0±0.10 2.0±0.05 1.5+0.10 -0.00 1.5 MIN. 0.6+0.00

-0.40 6.40±0.20 5.20±0.20 2.10±0.20

(mm)


H

T1

A

d

A

E1

AB

W

F

T

P0OD0

BA0

P2

K0

B0

SECTION B-B

SECTION A-A

OD1

P1

Devices Per Unit


SOP-8 Tape & Reel 2500


www.anpec.com.tw9

APM4412K

Taping Direction InformationSOP-8




www.anpec.com.tw10

APM4412K



100 °C 150 °C

60-120 seconds

150 °C 200 °C

60-120 seconds



183 °C 60-150 seconds

217 °C 60-150 seconds










Package Thickness

Volume mm3 <350

Volume mm3 350-2000

Volume mm3 >2000

<1.6 mm 260 °C 260 °C 260 °C 1.6 mm – 2.5 mm 260 °C 250 °C 245 °C

≥2.5 mm 250 °C 245 °C 245 °C



<350 Volume mm3

≥350 <2.5 mm 235 °C 220 °C

≥2.5 mm 220 °C 220 °C




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APM4412K

Customer Service




Fax : 886-2-2917-3838



www.anpec.com.tw1


APM4810K

Features

Applications


Portable Equipment and Battery PoweredSystems

Pin Description

Ordering and Marking InformationN-Channel MOSFET

• 30V/11A,

RDS(ON) = 12mΩ(typ.) @ VGS = 10V RDS(ON) =18mΩ(typ.) @ VGS = 4.5V



• Lead Free and Green Devices Available(RoHS Compliant)

Top View of SOP − 8

G

S

D D( 5,6,7,8 )

(4)

(1, 2, 3)

DD

SS

APM4810

Handling Code

Temperature RangePackage Code

Package Code K : SOP-8Operating Junction Temperature Range C : -55 to 150 oCHandling Code TR : Tape & ReelAssembly Material L : Lead Free Device G : Halogen and Lead Free Device

APM4810 K : XXXXX - Date Code

Assembly Material

APM4810XXXXX


SS

SG

DD

DD


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APM4810K

Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)







40 A




TA=25°C 2 PD* Maximum Power Dissipation

TA=100°C 0.8 W

RθJA* Thermal Resistance-Junction to Ambient 62.5 °C/W



Min. Typ. Max. Unit




TJ=85°C - - 30 µA




a Drain-Source On-State Resistance VGS=4.5V, IDS=10A - 18 25

mΩ







- 4 -

nC


www.anpec.com.tw3

APM4810K

Electrical Characteristics (Cont.) (TA = 25°C Unless Otherwise Noted)


Min. Typ. Max. Unit







pF






- 6 12

ns

trrb Reverse Recovery Time - 19 - ns

qrrb Reverse Recovery Charge

ISD=11A, dlSD/dt=100A/µs - 13 - nC



www.anpec.com.tw4

APM4810K

I D -

Dra

in C

urre

nt (A

)

Drain Current

TJ- Junction Temperature (°C)

Safe Operation Area


Nor

mal

ized

Tra

nsie

nt T

herm

al R

esis

tanc

e



Power Dissipation

Pto

t - P

ower

(W)

TJ - Junction Temperature (°C)

I D -

Dra

in C

urre

nt (A

)

0 20 40 60 80 100 120 140 1600.0

0.5

1.0

1.5

2.0

2.5

TA=25oC

0 20 40 60 80 100 120 140 1600

2

4

6

8

10

12

14

TA=25oC,V

G=10V

1E-4 1E-3 0.01 0.1 1 10 300.01

0.1

1

2


θJA : 62.5 oC/W

0.01

0.02

0.05

0.1

0.2

Single Pulse

Duty = 0.5


0.01 0.1 1 10 1000.01

0.1

1

10

100

Rds(on

) Lim

it

1s

TA=25oC

10ms

300µs

1ms

100ms

DC


www.anpec.com.tw5

APM4810K

RD

S(O

N) -

On

- Res

ista

nce

(mΩ

)






I D -

Dra

in C

urre

nt (A

)




RD

S(O

N) -

On

- Res

ista

nce

(mΩ

)

Nor

mal

ized

Thr

esho

ld V

olta

ge

0 5 10 15 20 25 30 35 404

8

12

16

20

24

28

VGS

=4.5V

VGS

=10V

2 3 4 5 6 7 8 9 106

9

12

15

18

21

24

27

30

ID=11A

-50 -25 0 25 50 75 100 125 1500.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6IDS

= 250µA


0.0 0.5 1.0 1.5 2.0 2.5 3.00

5

10

15

20

25

30

35

40

2V

3V

2.5V

3.5VV

GS= 4,4.5,5,6,7,8,9,10V


www.anpec.com.tw6

APM4810K



Nor

mal

ized

On

Res

ista

nce


C -

Cap

acita

nce

(pF)



I S -

Sou

rce

Cur

rent

(A)



VG

S -

Gat

e - s

ourc

e V

olta

ge (V

)

-50 -25 0 25 50 75 100 125 1500.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

VGS

= 10V

IDS

= 11A

RON

@Tj=25oC: 12mΩ

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.60.1

1

10

40

Tj=150oC

Tj=25oC

0 5 10 15 20 25 300

200

400

600

800

1000

1200

1400

Frequency=1MHz

CrssCoss

Ciss

0 4 8 12 16 200

1

2

3

4

5

6

7

8

9

10V

DS=15V

IDS

=11A



www.anpec.com.tw7

APM4810K

Package InformationSOP-8

SYMBOL MIN. MAX.

1.75

0.10

0.17 0.25

0.25

A

A1

c

D

E

E1

e

h

L

MILLIMETERS

b 0.31 0.51

SOP-8

0.25 0.50

0.40 1.27

MIN. MAX.

INCHES

0.069

0.004

0.012 0.020

0.007 0.010

0.010 0.020

0.016 0.050

0

0.010

1.27 BSC 0.050 BSC

A2 1.25 0.049

0° 8 ° 0° 8 °

D

e

EE1

SEE VIEW A

cb

h X

45°

A

A1

A2

L

VIEW A

0.25



3.80

5.80

4.80

4.00

6.20

5.00 0.189 0.197

0.228 0.244

0.150 0.157


www.anpec.com.tw8

APM4810K


330.0±2.00 50 MIN. 12.4+2.00 -0.00

13.0+0.50 -0.20 1.5 MIN. 20.2 MIN. 12.0±0.30 1.75±0.10 5.5±0.05

P0 P1 P2 D0 D1 T A0 B0 K0 SOP-8

4.0±0.10 8.0±0.10 2.0±0.05 1.5+0.10 -0.00 1.5 MIN. 0.6+0.00

-0.40 6.40±0.20 5.20±0.20 2.10±0.20

(mm)


H

T1

A

d

A

E1

AB

W

F

T

P0OD0

BA0

P2

K0

B0

SECTION B-B

SECTION A-A

OD1

P1

Devices Per Unit




www.anpec.com.tw9

APM4810K



t 25 C to Peak

tp

Ramp-up

tL

Ramp-downts

Preheat

Tsmax

Tsmin

TL

TP

25

Tem

per

atur

e

Time


°





www.anpec.com.tw10

APM4810K



100°C 150°C

60-120 seconds

150°C 200°C

60-180 seconds











Volume mm3 350-2000

Volume mm3 >2000

<1.6 mm 260 +0°C* 260 +0°C* 260 +0°C* 1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C*




<350 Volume mm3

≥350 <2.5 mm 240 +0/-5°C 225 +0/-5°C ≥2.5 mm 225 +0/-5°C 225 +0/-5°C

Customer Service




Fax : 886-2-2917-3838


Copyright ANPEC Electronics Corp.Rev. A.2 - Dec., 2008

APM4812K

www.anpec.com.tw1



Features

Applications

• 30V/8A, RDS(ON)= 18mΩ(typ.) @ VGS= 10V RDS(ON)= 26mΩ(typ.) @ VGS= 4.5V• Super High Dense Cell Design• Reliable and Rugged


(RoHS Compliant)

N-Channel MOSFET

Pin Description




SS

SG

DD

DD

G

S

D DDD

SS


APM4812



APM4812 K :APM4812XXXXX XXXXX - Date Code

Assembly Material


APM4812K

www.anpec.com.tw2








30 A





TA=100°C 0.8 W




Min. Typ. Max. Unit




TJ=85°C - - 30 µA




a Drain-Source On-state Resistance VGS=4.5V, IDS=5.6A - 26 34

mΩ

Diodes Characteristicsb




ISD=8A, dlSD/dt=100A/µs - 8 - nc


APM4812K

www.anpec.com.tw3



Min. Typ. Max. Unit







pF






- 4 8

ns






- 3 -

nC



APM4812K

www.anpec.com.tw4


ID -

Dra

in C

urre

nt (A

)

Safe Operation Area


Power Dissipation

Pto

t - P

ower

(W)


ID -

Dra

in C

urre

nt (A

)

Drain Current




Nor

mal

ized

Tra

nsie

nt T

herm

al R

esis

tanc

e

0 20 40 60 80 100 120 140 1600.0

0.5

1.0

1.5

2.0

2.5

TA=25oC

0 20 40 60 80 100 120 140 1600

2

4

6

8

10

TA=25oC,V

G=10V

0.01 0.1 1 10 1000.01

0.1

1

10

100

Rds(o

n) Li

mit

1s

TA=25oC

10ms

300µs

1ms

100ms

DC

1E-4 1E-3 0.01 0.1 1 10 300.01

0.1

1

2


θJA : 62.5 oC/W

0.01

0.02

0.05

0.1

0.2

Single Pulse

Duty = 0.5


APM4812K

www.anpec.com.tw5



ID -

Dra

in C

urre

nt (A

)


RD

S(O

N) - O

n - R

esis

tanc

e (m

Ω)





RD

S(O

N) -

On

- Res

ista

nce

(mΩ

)



Nor

mal

ized

Thr

esho

ld V

olta

ge

0.0 0.5 1.0 1.5 2.0 2.5 3.00

3

6

9

12

15

18

21

24

27

30

3V

VGS

=4,5,6,7,8,9,10V

0 5 10 15 20 25 305

10

15

20

25

30

35

40

VGS

=4.5V

VGS

=10V

2 3 4 5 6 7 8 9 1012

16

20

24

28

32

36

40

44

ID= 8A

-50 -25 0 25 50 75 100 125 1500.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6IDS

= 250µA


APM4812K

www.anpec.com.tw6



Nor

mal

ized

On

Res

ista

nce



IS -

Sou

rce

Cur

rent

(A)


C -

Cap

acita

nce

(pF)



VG

S -

Gat

e-so

urce

Vol

tage

(V)

0 2 4 6 8 10 12 140

1

2

3

4

5

6

7

8

9

10V

DS=15V

IDS

=8A

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.60.1

1

10

30

Tj=150oC

Tj=25oC

0 5 10 15 20 25 300

100

200

300

400

500

600

700

800

900

Frequency=1MHz

Crss

Coss

Ciss

-50 -25 0 25 50 75 100 125 1500.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

VGS

= 10V

IDS

= 8A

RON

@Tj=25oC: 18mΩ


APM4812K

www.anpec.com.tw7

SOP-8

SYMBOL MIN. MAX.

1.75

0.10

0.17 0.25

0.25

A

A1

c

D

E

E1

e

h

L

MILLIMETERS

b 0.31 0.51

SOP-8

0.25 0.50

0.40 1.27

MIN. MAX.

INCHES

0.069

0.004

0.012 0.020

0.007 0.010

0.010 0.020

0.016 0.050

0

0.010

1.27 BSC 0.050 BSC

A2 1.25 0.049

0° 8 ° 0° 8 °

D

e

EE1

SEE VIEW A

cb

h X

45°

A

A1

A2

L

VIEW A

0.25



3.80

5.80

4.80

4.00

6.20

5.00 0.189 0.197

0.228 0.244

0.150 0.157

Package Information


APM4812K

www.anpec.com.tw8

Application A H T1 C d D W E1 F 330.0±2.00

50 MIN. 12.4+2.00 -0.00

13.0+0.50 -0.20

1.5 MIN. 20.2 MIN. 12.0±0.30 1.75±0.10 5.5±0.05

P0 P1 P2 D0 D1 T A0 B0 K0 SOP-8

4.0±0.10 8.0±0.10 2.0±0.05 1.5+0.10 -0.00 1.5 MIN. 0.6+0.00

-0.40 6.40±0.20 5.20±0.20 2.10±0.20

(mm)


H

T1

A

d

A

E1

AB

W

F

T

P0OD0

BA0

P2

K0

B0

SECTION B-B

SECTION A-A

OD1

P1

Devices Per Unit




APM4812K

www.anpec.com.tw9




t 25 C to Peak

tp

Ramp-up

tL

Ramp-downts

Preheat

Tsmax

Tsmin

TL

TP

25

Tem

per

atur

e

Time


°




APM4812K

www.anpec.com.tw10



100°C 150°C

60-120 seconds

150°C 200°C

60-180 seconds









Volume mm3 350-2000

Volume mm3 >2000

<1.6 mm 260 +0°C* 260 +0°C* 260 +0°C* 1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C*




<350 Volume mm3

≥350 <2.5 mm 240 +0/-5°C 225 +0/-5°C ≥2.5 mm 225 +0/-5°C 225 +0/-5°C

Customer Service






Copyright ANPEC Electronics Corp.Rev. B.3 - Jan., 2009

www.anpec.com.tw1


APM4320K

Features

Applications

Pin Description


• 30V/13A,

RDS(ON ) = 7.5mΩ(typ.) @ VGS = 10VRDS(ON) =10.5mΩ(typ.) @ VGS = 4.5V



• SOP-8 Package


Top View of SOP−8

• Power Management in Notebook Computer,Portable Equipment and Battery PoweredSystems

G

S

D D( 5,6,7,8 )

(4)

(1, 2, 3)

DD

SS

SS

SG

DD

DD


APM4320




Assembly Material


www.anpec.com.tw2

APM4320K








50 A





TA=100°C 0.8 W




Min. Typ. Max. Unit




TJ=85°C - - 30 µA



VGS=10V, IDS=13A - 7.5 9.5 RDS(ON)

a Drain-Source On-state Resistance VGS=4.5V, IDS=7A - 10.5 13.5

mΩ







- 11 -

nC


www.anpec.com.tw3

APM4320K



Min. Typ. Max. Unit


RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 2 - Ω





pF






- 18 33

ns


qrr Reverse Recovery Charge ISD=13A, dlSD/dt=100A/µs

- 9 - nC Note a : Pulse test ; pulse width≤300µs, duty cycle≤2%. Note b : Guaranteed by design, not subject to production testing.


www.anpec.com.tw4

APM4320K


ID -

Dra

in C

urre

nt (A

)

Drain Current


Safe Operation Area


Nor

mal

ized

Tra

nsie

nt T

herm

al R

esis

tanc

e



Power Dissipation

Pto

t - P

ower

(W)


ID -

Dra

in C

urre

nt (A

)

0 20 40 60 80 100 120 140 1600.0

0.5

1.0

1.5

2.0

2.5

TA=25oC

0.01 0.1 1 10 1000.01

0.1

1

10

100

Rds(o

n) L

imit

1s

TA=25oC

10ms

300µs

1ms

100ms

DC

1E-4 1E-3 0.01 0.1 1 10 301E-3

0.01

0.1

1

2


θJA : 62.5 oC/W

0.01

0.02

0.05

0.1

0.2

Single Pulse

Duty = 0.5

0 20 40 60 80 100 120 140 1600

3

6

9

12

15

TA=25oC,V

G=10V


www.anpec.com.tw5

APM4320K

RD

S(O

N) - O

n - R

esis

tanc

e (m

Ω)






ID -

Dra

in C

urre

nt (A

)



Nor

mal

ized

Thr

esho

ld V

olta

ge


0.0 0.5 1.0 1.5 2.0 2.5 3.00

5

10

15

20

25

30

35

40

45

50

3.5V

3V

4V

VGS

=5,6,7,8,9,10V

-50 -25 0 25 50 75 100 125 1500.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6IDS

=250µA

RD

S(O

N) -

On

- Res

ista

nce

(mΩ

)


0 10 20 30 40 502

4

6

8

10

12

14

16

18

VGS

=10V

VGS

=4.5V

1 2 3 4 5 6 7 8 9 100

5

10

15

20

25

30

ID= 13A


www.anpec.com.tw6

APM4320K



Nor

mal

ized

On

Res

ista

nce


C -

Cap

acita

nce

(pF)



IS -

Sou

rce

Cur

rent

(A)



VG

S -

Gat

e - s

ourc

e V

olta

ge (V

)


0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.40.3

1

10

50

Tj=150oC

Tj=25oC

0 5 10 15 20 25 300

500

1000

1500

2000

2500

3000

3500

Frequency=1MHz

Crss

Coss

Ciss

0 5 10 15 20 25 30 350

1

2

3

4

5

6

7

8

9

10V

DS= 15V

ID= 13A

-50 -25 0 25 50 75 100 125 1500.00

0.25

0.50

0.75

1.00

1.25

1.50

1.75

RON

@Tj=25oC: 7.5mΩ

VGS

= 10V

IDS

= 13A


www.anpec.com.tw7

APM4320K

Package Information

SOP-8

SYMBOL MIN. MAX.

1.75

0.10

0.17 0.25

0.25

A

A1

c

D

E

E1

e

h

L

MILLIMETERS

b 0.31 0.51

SOP-8

0.25 0.50

0.40 1.27

MIN. MAX.

INCHES

0.069

0.004

0.012 0.020

0.007 0.010

0.010 0.020

0.016 0.050

0

0.010

1.27 BSC 0.050 BSC

A2 1.25 0.049

0° 8 ° 0° 8 °

D

e

EE1

SEE VIEW A

cb

h X

45°

A

A1

A2

L

VIEW A

0.25



3.80

5.80

4.80

4.00

6.20

5.00 0.189 0.197

0.228 0.244

0.150 0.157


www.anpec.com.tw8

APM4320K


50 MIN. 12.4+2.00 -0.00

13.0+0.50 -0.20

1.5 MIN. 20.2 MIN. 12.0±0.30 1.75±0.10 5.5±0.05

P0 P1 P2 D0 D1 T A0 B0 K0 SOP-8

4.0±0.10 8.0±0.10 2.0±0.05 1.5+0.10 -0.00 1.5 MIN. 0.6+0.00

-0.40 6.40±0.20 5.20±0.20 2.10±0.20

(mm)


H

T1

A

d

A

E1

AB

W

F

T

P0OD0

BA0

P2

K0

B0

SECTION B-B

SECTION A-A

OD1

P1

Devices Per Unit




www.anpec.com.tw9

APM4320K




t 25 C to Peak

tp

Ramp-up

tL

Ramp-downts

Preheat

Tsmax

Tsmin

TL

TP

25

Tem

per

atur

e

Time


°




www.anpec.com.tw10

APM4320K



100°C 150°C

60-120 seconds

150°C 200°C

60-180 seconds









Volume mm3 350-2000

Volume mm3 >2000

<1.6 mm 260 +0°C* 260 +0°C* 260 +0°C* 1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C*




<350 Volume mm3

≥350 <2.5 mm 240 +0/-5°C 225 +0/-5°C ≥2.5 mm 225 +0/-5°C 225 +0/-5°C







www.anpec.com.tw1


APM4330KC

Features

Applications


Portable Equipment and Battery Powered Sys-tems

Pin Description



• 30V/15A,

RDS(ON) = 5.5mΩ(typ.) @ VGS = 10VRDS(ON) =7mΩ(typ.) @ VGS = 4.5V



• SOP-8 Package


G

S

D D( 5,6,7,8 )

(4)

(1, 2, 3)

DD

SS


APM4330


Package Code K : SOP-8Operating Junction Temperature Range C : -55 to 150 oCHandling Code TR : Tape & ReelAssembly Material L : Lead Free Device G : Halogen and Lead Free Device


Assembly Material

SS

SG

DD

DD


www.anpec.com.tw2

APM4330KC








60 A





TA=100°C 0.8 W




Min. Typ. Max. Unit




TJ=85°C - - 30 µA



VGS=10V, IDS=15A - 5.5 6.6 RDS(ON)

a Drain-Source On-State Resistance VGS=4.5V, IDS=11.5A - 7 9

mΩ







- 14 -

nC


www.anpec.com.tw3

APM4330KC



Min. Typ. Max. Unit

DYNAMIC CHARACTERISTICSb






pF






- 26 48

ns



- 6 - nC Note a : Pulse test ; pulse width≤300µs, duty cycle≤2%. Note b : Guaranteed by design, not subject to production testing.


www.anpec.com.tw4

APM4330KC


I D -

Dra

in C

urre

nt (A

)

Drain Current


Safe Operation Area


Nor

mal

ized

Tra

nsie

nt T

herm

al R

esis

tanc

e



Power Dissipation

Pto

t - P

ower

(W)


I D -

Dra

in C

urre

nt (A

)

0 20 40 60 80 100 120 140 1600.0

0.5

1.0

1.5

2.0

2.5

TA=25oC

0.01 0.1 1 10 1000.01

0.1

1

10

100

Rds(on

) Lim

it

1s

TA=25oC

10ms

300µs

1ms

100ms

DC

1E-4 1E-3 0.01 0.1 1 10 301E-3

0.01

0.1

1

2


θJA : 62.5 oC/W

0.01

0.02

0.05

0.1

0.2

Single Pulse

Duty = 0.5

0 20 40 60 80 100 120 140 1600

3

6

9

12

15

18

TA=25oC,V

G=10V


www.anpec.com.tw5

APM4330KC

RD

S(O

N) -

On

- R

esis

tanc

e (m

Ω)






I D -

Dra

in C

urre

nt (A

)



Nor

mal

ized

Thr

esho

ld V

olta

ge

0.0 0.5 1.0 1.5 2.0 2.5 3.00

10

20

30

40

50

60

3V

2.5V

3.5VV

GS=4,5,6,7,8,9,10V

-50 -25 0 25 50 75 100 125 1500.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

IDS

=250µA

RD

S(O

N) -

On

- R

esis

tanc

e (m

Ω)


0 10 20 30 40 50 603

4

5

6

7

8

9

10

VGS

=10V

VGS

=4.5V

1 2 3 4 5 6 7 8 9 100

2

4

6

8

10

12

14

16

18

20

ID= 15A



www.anpec.com.tw6

APM4330KC



Nor

mal

ized

On

Res

ista

nce


C -

Cap

acita

nce

(pF)



I S -

Sou

rce

Cur

rent

(A)



VG

S -

Gat

e - s

ourc

e V

olta

ge (V

)

-50 -25 0 25 50 75 100 125 1500.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

RON

@Tj=25oC: 5.5mΩ

VGS

= 10V

IDS

= 15A

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.40.3

1

10

50

Tj=150oC

Tj=25oC

0 5 10 15 20 25 300

500

1000

1500

2000

2500

3000

3500

4000

4500

5000

Frequency=1MHz

Crss

Coss

Ciss

0 10 20 30 40 50 600

1

2

3

4

5

6

7

8

9

10V

DS= 15V

ID= 15A



www.anpec.com.tw7

APM4330KC

Package Information

SOP-8

SYMBOL MIN. MAX.

1.75

0.10

0.17 0.25

0.25

A

A1

c

D

E

E1

e

h

L

MILLIMETERS

b 0.31 0.51

SOP-8

0.25 0.50

0.40 1.27

MIN. MAX.

INCHES

0.069

0.004

0.012 0.020

0.007 0.010

0.010 0.020

0.016 0.050

0

0.010

1.27 BSC 0.050 BSC

A2 1.25 0.049

0° 8 ° 0° 8 °

D

e

EE1

SEE VIEW A

cb

h X

45°

A

A1

A2

L

VIEW A

0.25



3.80

5.80

4.80

4.00

6.20

5.00 0.189 0.197

0.228 0.244

0.150 0.157


www.anpec.com.tw8

APM4330KC


330.0±2.00 50 MIN. 12.4+2.00 -0.00

13.0+0.50 -0.20

1.5 MIN. 20.2 MIN. 12.0±0.30 1.75±0.10 5.5±0.05

P0 P1 P2 D0 D1 T A0 B0 K0 SOP-8

4.0±0.10 8.0±0.10 2.0±0.05 1.5+0.10 -0.00 1.5 MIN. 0.6+0.00

-0.40 6.40±0.20 5.20±0.20 2.10±0.20

(mm)


H

T1

A

d

A

E1

AB

W

F

T

P0OD0

BA0

P2

K0

B0

SECTION B-B

SECTION A-A

OD1

P1

Devices Per Unit




www.anpec.com.tw9

APM4330KC




t 25 C to Peak

tp

Ramp-up

tL

Ramp-downts

Preheat

Tsmax

Tsmin

TL

TP

25

Tem

per

atur

e

Time


°




www.anpec.com.tw10

APM4330KC



100°C 150°C

60-120 seconds

150°C 200°C

60-180 seconds









Volume mm3 350-2000

Volume mm3 >2000

<1.6 mm 260 +0°C* 260 +0°C* 260 +0°C* 1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C*




<350 Volume mm3

≥350 <2.5 mm 240 +0/-5°C 225 +0/-5°C ≥2.5 mm 225 +0/-5°C 225 +0/-5°C






Copyright ANPEC Electronics Corp.Rev. A.2 - Jan., 2009

APM4340K

www.anpec.com.tw1



Features

Applications

• 30V/17A,



• Avalanche Rated



(RoHS Compliant)

N-Channel MOSFET

Top View of SOP−8

Pin Description



SS

SG

DD

DD


G

S

D D( 5,6,7,8 )

(4)

(1, 2, 3)

DD

SS

APM4340

Handling Code

Temperature Range

Package Code



Assembly Material


APM4340K

www.anpec.com.tw2







IDM* 300µs Pulsed Drain Current VGS = 10V

60 A




TA = 25°C 2 PD* Maximum Power Dissipation

TA = 100°C 0.8 W




Min. Typ. Max. Unit




TJ=85°C - - 30 µA



VGS=10V, IDS=17A - 3.8 4.5 RDS(ON)

a Drain-Source On-state Resistance VGS=4.5V, IDS=12A - 5 6.3

mΩ

VSDa Diode Forward Voltage ISD=3A,VGS=0V - 0.7 1.3 V






- 22 -

nC


APM4340K

www.anpec.com.tw3



Min. Typ. Max. Unit







pF






- 47 86

ns



ISD=17A, dlSD/dt=100A/µs - 37 - nC



APM4340K

www.anpec.com.tw4


ID -

Dra

in C

urre

nt (A

)

Safe Operation Area


Power Dissipation

Pto

t - P

ower

(W)


ID -

Dra

in C

urre

nt (A

)

Drain Current




Nor

mal

ized

Tra

nsie

nt T

herm

al R

esis

tanc

e

0 20 40 60 80 100 120 140 1600.0

0.5

1.0

1.5

2.0

2.5

TA=25oC

0 20 40 60 80 100 120 140 1600

4

8

12

16

20

TA=25oC,V

G=10V

1E-4 1E-3 0.01 0.1 1 10 301E-3

0.01

0.1

1

2


θJA : 62.5 oC/W

0.01

0.02

0.05

0.1

0.2

Single Pulse

Duty = 0.5

0.01 0.1 1 10 1000.01

0.1

1

10

100

200

Rds(on

) Lim

it

1s

TA=25oC

10ms

300µs

1ms

100ms

DC


APM4340K

www.anpec.com.tw5



ID -

Dra

in C

urre

nt (A

)


RD

S(O

N) - O

n - R

esis

tanc

e (m

Ω)





RD

S(O

N) -

On

- Res

ista

nce

(mΩ

)



Nor

mal

ized

Thr

esho

ld V

olta

ge

1 2 3 4 5 6 7 8 9 100

2

4

6

8

10

12

14

16

ID= 17A

-50 -25 0 25 50 75 100 125 1500.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

IDS

=250µA

0.0 0.5 1.0 1.5 2.0 2.5 3.00

10

20

30

40

50

60

3V

VGS

=3.5,4,5,6,7,8,9,10V

0 10 20 30 40 50 601

2

3

4

5

6

7

8

VGS

=10V

VGS

=4.5V


APM4340K

www.anpec.com.tw6



Nor

mal

ized

On

Res

ista

nce



IS -

Sou

rce

Cur

rent

(A)


C -

Cap

acita

nce

(pF)



VG

S -

Gat

e-so

urce

Vol

tage

(V)

-50 -25 0 25 50 75 100 125 1500.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

RON

@Tj=25oC: 3.8mΩ

VGS

= 10V

IDS

= 17A

0 5 10 15 20 25 300

1000

2000

3000

4000

5000

6000

7000

8000

9000

Frequency=1MHz

Crss

Coss

Ciss

0 20 40 60 80 100 1200

1

2

3

4

5

6

7

8

9

10V

DS= 15V

ID= 17A

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.40.4

1

10

60

Tj=150oC

Tj=25oC


APM4340K

www.anpec.com.tw7

SOP-8

SYMBOL MIN. MAX.

1.75

0.10

0.17 0.25

0.25

A

A1

c

D

E

E1

e

h

L

MILLIMETERS

b 0.31 0.51

SOP-8

0.25 0.50

0.40 1.27

MIN. MAX.

INCHES

0.069

0.004

0.012 0.020

0.007 0.010

0.010 0.020

0.016 0.050

0

0.010

1.27 BSC 0.050 BSC

A2 1.25 0.049

0° 8 ° 0° 8 °

D

e

EE1

SEE VIEW A

cb

h X

45°

A

A1

A2

L

VIEW A

0.25



3.80

5.80

4.80

4.00

6.20

5.00 0.189 0.197

0.228 0.244

0.150 0.157

Package Information


APM4340K

www.anpec.com.tw8


50 MIN. 12.4+2.00 -0.00

13.0+0.50 -0.20

1.5 MIN. 20.2 MIN. 12.0±0.30 1.75±0.10 5.5±0.05

P0 P1 P2 D0 D1 T A0 B0 K0 SOP-8

4.0±0.10 8.0±0.10 2.0±0.05 1.5+0.10 -0.00 1.5 MIN. 0.6+0.00

-0.40 6.40±0.20 5.20±0.20 2.10±0.20

(mm)


H

T1

A

d

A

E1

AB

W

F

T

P0OD0

BA0

P2

K0

B0

SECTION B-B

SECTION A-A

OD1

P1

Devices Per Unit




APM4340K

www.anpec.com.tw9




t 25 C to Peak

tp

Ramp-up

tL

Ramp-downts

Preheat

Tsmax

Tsmin

TL

TP

25

Tem

per

atur

e

Time


°




APM4340K

www.anpec.com.tw10



100°C 150°C

60-120 seconds

150°C 200°C

60-180 seconds









Volume mm3 350-2000

Volume mm3 >2000

<1.6 mm 260 +0°C* 260 +0°C* 260 +0°C* 1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C*




<350 Volume mm3

≥350 <2.5 mm 240 +0/-5°C 225 +0/-5°C ≥2.5 mm 225 +0/-5°C 225 +0/-5°C







APM4472K

www.anpec.com.tw1



Features

Applications

• 40V/12A, RDS(ON)= 7.5mΩ(typ.) @ VGS= 10V RDS(ON)= 10.5mΩ(typ.) @ VGS= 4.5V• Super High Dense Cell Design• Avalanche Rated• Reliable and Rugged


(RoHS Compliant)

N-Channel MOSFET

Pin Description

• Inventer Application in LCM and LCD TV


SS

SG

DD

DD

APM4472


Package Code K : SOP-8Operating Junction Temp. Range C : -55 to 150°CHandling Code TR : Tape & ReelAssembly Material L : Lead Free Device G : Halogen and Lead Free Device

APM4472 K : APM4472XXXXX XXXXX - Date Code

Assembly Material


G

S

D DDD

SS

http://www.anpec.com.tw


APM4472K

www.anpec.com.tw2








50 A





TA=100°C 0.8 W

RθJA* Thermal Resistance-Junction to Ambient 62.5 °C/W Note:

*Surface Mounted on 1in2 pad area, t ≤ 10sec.

APM4472K Symbol Parameter Test Condition

Min. Typ. Max. Unit



TJ=85°C 30 µA

VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 1.3 2 3 V


VGS=10V, IDS=12A 7.5 9.5 RDS(ON)

a Drain-Source On-state Resistance VGS=4.5V, IDS=8A 10.5 14

mΩ

Diodes Characteristics b VSD




ISD=12A, dlSD/dt=100A/µs 31 nC



APM4472K

www.anpec.com.tw3


APM4472K Symbol Parameter Test Condition

Min. Typ. Max. Unit






pF






21 39

ns





12

nC




APM4472K

www.anpec.com.tw4

Typical CharacteristicsID

- D

rain

Cur

rent

(A)

Safe Operation Area


Power Dissipation

Pto

t - P

ower

(W)


ID -

Dra

in C

urre

nt (A

)

Drain Current




Nor

mal

ized

Tra

nsie

nt T

herm

al R

esis

tanc

e0 20 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

TA=25oC

0 20 40 60 80 100 120 140 1600

2

4

6

8

10

12

14

TA=25oC,V

G=10V

1E-4 1E-3 0.01 0.1 1 10 601E-3

0.01

0.1

1

2


θJA : 62.5 oC/W

0.01

0.02

0.05

0.1

0.2

Single Pulse

Duty = 0.5

0.01 0.1 1 10 1000.01

0.1

1

10

100

300µs

1ms

Rds(o

n) L

imit

TC=25oC

10ms

100ms

DC



APM4472K

www.anpec.com.tw5



ID -

Dra

in C

urre

nt (A

)


RD

S(O

N) -

On

- Res

ista

nce

(mΩ

)





RD

S(O

N) -

On

- Res

ista

nce

(mΩ

)



Nor

mal

ized

Thr

esho

ld V

olta

ge

0.0 0.5 1.0 1.5 2.0 2.5 3.00

5

10

15

20

25

30

35

40

45

50

3.5V

3V

VGS

=4,4.5,5,6,7,8,9,10V

0 10 20 30 40 505

6

7

8

9

10

11

12

13

14

15

VGS

=10V

VGS

=4.5V

2 3 4 5 6 7 8 9 104

6

8

10

12

14

16

18

20

ID=12A

-50 -25 0 25 50 75 100 125 1500.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6IDS

=250µA



APM4472K

www.anpec.com.tw6



Nor

mal

ized

On

Res

ista

nce



IS -

Sou

rce

Cur

rent

(A)


C -

Cap

acita

nce

(pF)



VG

S -

Gat

e-so

urce

Vol

tage

(V)

-50 -25 0 25 50 75 100 125 1500.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

RON

@Tj=25oC: 7.5mΩ

VGS

= 10V

IDS

= 12A

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.40.2

1

10

50

Tj=150oC

Tj=25oC

0 5 10 15 20 25 300

500

1000

1500

2000

2500

3000

3500

4000

Frequency=1MHz

Crss

Coss

Ciss

0 10 20 30 40 50 600

1

2

3

4

5

6

7

8

9

10V

DS=20V

IDS

=12A



APM4472K

www.anpec.com.tw7

SOP-8

Package Information

SYMBOL MIN. MAX.

1.75

0.10

0.17 0.25

0.25

A

A1

c

D

E

E1

e

h

L

MILLIMETERS

b 0.31 0.51

SOP-8

0.25 0.50

0.40 1.27

MIN. MAX.

INCHES

0.069

0.004

0.012 0.020

0.007 0.010

0.010 0.020

0.016 0.050

0

0.010

1.27 BSC 0.050 BSC

A2 1.25 0.049

0° 8 ° 0° 8 °

D

e

EE1

SEE VIEW A

cbh

X 4

5°

A

A1

A2

L

VIEW A

0.25



3.80

5.80

4.80

4.00

6.20

5.00 0.189 0.197

0.228 0.244

0.150 0.157



APM4472K

www.anpec.com.tw8


330.0±2.00 50 MIN. 12.4+2.00 -0.00

13.0+0.50 -0.20

1.5 MIN. 20.2 MIN. 12.0±0.30 1.75±0.10 5.5±0.05

P0 P1 P2 D0 D1 T A0 B0 K0 SOP-8

4.0±0.10 8.0±0.10 2.0±0.05 1.5+0.10 -0.00 1.5 MIN. 0.6+0.00

-0.40 6.40±0.20 5.20±0.20 2.10±0.20


H

T1

A

d

A

E1

AB

W

F

T

P0OD0

BA0

P2

K0

B0

SECTION B-B

SECTION A-A

OD1

P1



Devices Per Unit

(mm)



APM4472K

www.anpec.com.tw9






100°C 150°C

60-120 seconds

150°C 200°C

60-180 seconds








t 25 C to Peak

tp

Ramp-up

tL

Ramp-downts

Preheat

Tsmax

Tsmin

TL

TP

25

Tem

per

atur

e

Time


°



APM4472K

www.anpec.com.tw10


<350 Volume mm3

350-2000 Volume mm3

>2000 <1.6 mm 260 +0°C* 260 +0°C* 260 +0°C*

1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C* ≥2.5 mm 250 +0°C* 245 +0°C* 245 +0°C*



<350 Volume mm3

≥350 <2.5 mm 240 +0/-5°C 225 +0/-5°C ≥2.5 mm 225 +0/-5°C 225 +0/-5°C


Customer Service







APM4476K

www.anpec.com.tw1



Features

Applications

• 40V/7.5A,

RDS(ON)= 15mΩ (typ.) @ VGS= 10V

RDS(ON)= 22mΩ (typ.) @ VGS= 4.5V• Super High Dense Cell Design• Reliable and Rugged


(RoHS Compliant)

N-Channel MOSFET

Pin Description

• Power Management in Notebook Computer,Portable Equipment and Battery Powered

Systems.

Top View of SOP- 8

Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina-tion finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirementsof IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” tomean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneousmaterial and total of Br and Cl does not exceed 1500ppm by weight).

DD

D

SS

SG

D

(4)G

S

D DDD

SS

(5, 6, 7, 8)

(1 , 2 , 3)

APM4476

Handling Code

Temperature Range

Package Code

APM4476 K: APM4476XXXXX XXXXX - Date Code

Assembly Material



APM4476K

www.anpec.com.tw2






ID* Continuous Drain Current 7.5


30 A





TA=100°C 0.8 W


Note: *Surface Mounted on 1in2 pad area, t ≤ 10sec.


Min. Typ. Max. Unit




TJ=85°C - - 30 µA

VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 1.3 2 2.5 V


VGS=10V, IDS=7.5A - 15 20 RDS(ON)


mΩ




qrr Reverse Recovery Charge ISD=7.5A, dlSD/dt=100A/µs

- 15 - nC


APM4476K

www.anpec.com.tw3



Min. Typ. Max. Unit







pF






- 11 21

ns





VDS=20V, VGS=10V, IDS=7.5A

- 3.4 -

nC



APM4476K

www.anpec.com.tw4


ID -

Dra

in C

urre

nt (A

)

Safe Operation Area


Power Dissipation

Pto

t - P

ower

(W)


ID -

Dra

in C

urre

nt (A

)

Drain Current




Nor

mal

ized

Effe

ctiv

e Tr

ansi

ent

0 20 40 60 80 100 120 140 1600.0

0.5

1.0

1.5

2.0

2.5

TA=25oC

0 20 40 60 80 100 120 140 1600

2

4

6

8

10

TA=25oC,V

G=10V

0.01 0.1 1 10 1000.01

0.1

1

10

100

1s

300µs

1ms

Rds(on

) Lim

it

TC=25oC

10ms

100ms

DC

1E-4 1E-3 0.01 0.1 1 10 601E-3

0.01

0.1

1

2


θJA : 62.5 oC/W

0.01

0.02

0.05

0.1

0.2

Single Pulse

Duty = 0.5


APM4476K

www.anpec.com.tw5



ID -

Dra

in C

urre

nt (A

)


RD

S(O

N) - O

n - R

esis

tanc

e (m

Ω)





RD

S(O

N) -

On

- Res

ista

nce

(mΩ

)



Nor

mal

ized

Thr

esho

ld V

olta

ge

0.0 0.5 1.0 1.5 2.0 2.5 3.00

5

10

15

20

25

30

3.5V

3V

VGS

=4,4.5,5,6,7,8,9,10V

0 5 10 15 20 25 308

12

16

20

24

28

32

VGS

=10V

VGS

=4.5V

2 3 4 5 6 7 8 9 1010

15

20

25

30

35

40

ID=7.5A

-50 -25 0 25 50 75 100 125 1500.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6IDS

=250µA


APM4476K

www.anpec.com.tw6


Nor

mal

ized

On

Res

ista

nce



IS -

Sou

rce

Cur

rent

(A)


C -

Cap

acita

nce

(pF)



VG

S -

Gat

e-S

ourc

e V

olta

ge (V

)

-50 -25 0 25 50 75 100 125 1500.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

RON

@Tj=25oC: 15mΩ

VGS

= 10V

IDS

= 7.5A

0.0 0.3 0.6 0.9 1.2 1.50.2

1

10

30

Tj=150oC

Tj=25oC

0 5 10 15 20 25 30 35 400

200

400

600

800

1000

1200

1400

1600

Frequency=1MHz

CrssCoss

Ciss

0 4 8 12 16 20 240

1

2

3

4

5

6

7

8

9

10V

DS=20V

IDS

=7.5A



APM4476K

www.anpec.com.tw7

Package Information

SOP-8D

e

EE1

SEE VIEW A

cb

h X

45°

A

A1

A2

L

VIEW A0.

25



SYMBOL MIN. MAX.

1.75

0.10

0.17 0.25

0.25

A

A1

c

D

E

E1

e

h

L

MILLIMETERS

b 0.31 0.51

SOP-8

0.25 0.50

0.40 1.27

MIN. MAX.

INCHES

0.069

0.004

0.012 0.020

0.007 0.010

0.010 0.020

0.016 0.050

0

0.010

1.27 BSC 0.050 BSC

A2 1.25 0.049

0° 8 ° 0° 8 °

3.80

5.80

4.80

4.00

6.20

5.00 0.189 0.197

0.228 0.244

0.150 0.157


APM4476K

www.anpec.com.tw8



330.0±2.00 50 MIN. 12.4+2.00 -0.00

13.0+0.50 -0.20

1.5 MIN. 20.2 MIN. 12.0±0.30 1.75±0.10 5.5±0.05

P0 P1 P2 D0 D1 T A0 B0 K0 SOP-8

4.0±0.10 8.0±0.10 2.0±0.05 1.5+0.10 -0.00 1.5 MIN. 0.6+0.00

-0.40 6.40±0.20 5.20±0.20 2.10±0.20

(mm)

Devices Per Unit

Package Type Unit Quantity SOP- 8 Type & Reel 2500

H

T1

A

d

A

E1

AB

W

F

T

P0OD0

BA0

P2

K0

B0

SECTION B-B

SECTION A-A

OD1

P1


APM4476K

www.anpec.com.tw9





APM4476K

www.anpec.com.tw10



100 °C 150 °C

60-120 seconds

150 °C 200 °C

60-120 seconds



183 °C 60-150 seconds

217 °C 60-150 seconds










Package Thickness

Volume mm3 <350

Volume mm3 350-2000

Volume mm3 >2000

<1.6 mm 260 °C 260 °C 260 °C 1.6 mm – 2.5 mm 260 °C 250 °C 245 °C

≥2.5 mm 250 °C 245 °C 245 °C

Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)

Package Thickness

Volume mm3

<350 Volume mm3

≥350

<2.5 mm 235 °C 220 °C

≥2.5 mm 220 °C 220 °C




APM4476K

www.anpec.com.tw11

Customer Service




Fax : 886-2-2917-3838



APM4474K

www.anpec.com.tw1



Features

Applications

• 40V/11A,

• RDS(ON)= 9mΩ (typ.) @ VGS= 10V

• RDS(ON)= 18mΩ (typ.) @ VGS= 4.5V


• Avalanche Rated


• SOP-8 Package


• (RoHS Compliant)

N-Channel MOSFET

Pin Description

• Power Management in LCD monitor/TV inverter.

Top View of SOP- 8

Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; whichare fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C forMSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to mean lead-free (RoHS compliant) and halogenfree (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm byweight).

DD

D

SS

SG

D

G

S

D DDD

SS

APM4474

Handling Code

Temperature Range

Package Code

APM4474 K : APM4474XXXXX

XXXXX - Date Code

Assembly Material

Package Code K : SOP-8Operating Ambient Temperature Range C : -55 to 150 oCHandling Code TR : Tape & ReelAssembly Material L : Lead Free Device G : Halogen and Lead Free Device


APM4474K

www.anpec.com.tw2








50 A





TA=100°C 0.8 W


Notes：*Surface Mounted on 1in2 pad area, t ≤ 10sec.


Min. Typ. Max. Unit




TJ=85°C - - 30 µA

VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 1.5 2 2.5 V




mΩ

DIODE CHARACTERISTICS




- 20 - nC







pF






- 30 55

ns






- 9.3 -

nC



APM4474K

www.anpec.com.tw3


Power Dissipation Drain Current

Pto

t - P

ower

(W

)

Tj - Junction Temperature (oC)

0 20 40 60 80 100 120 140 1600.0

0.5

1.0

1.5

2.0

2.5

TA=25oC

0 20 40 60 80 100 120 140 1600

2

4

6

8

10

12

TA=25oC,VG=10V


I D -

Dra

in C

urre

nt (A

)

0.01 0.1 1 10 1000.01

0.1

1

10

100

300µs

DC

TC=25oC

1ms

10ms

100ms

1s

Rds(o

n) L

imit

Safe Operation Area

I D -

Dra

in C

urre

nt (A

)



Nor

mal

ized

Effe

ctiv

e T

rans

ient


1E-4 1E-3 0.01 0.1 1 10 601E-3

0.01

0.1

1

2

Mounted on 1in2 padRθJA : 62.5oC/W

0.01

0.02

0.05

0.1

0.2

Single Pulse

Duty = 0.5


APM4474K

www.anpec.com.tw4



I D -

Dra

in C

urre

nt (A

)



RD

S(O

N) -

On

Res

ista

nce

(mΩ

)



RD

S(O

N) -

On

Res

ista

nce

(mΩ

)

VGS - Gate-Source Voltage (V)


Nor

mal

ized

Thr

esho

ld V

olta

ge


0.0 0.5 1.0 1.5 2.0 2.5 3.00

5

10

15

20

25

30

35

40

45

50

4V

4.5V

3.5V

VGS=5,5.5,6,7,8,9,10V

0 10 20 30 40 500

5

10

15

20

25

30

35

VGS=4.5V

VGS=10V

2 3 4 5 6 7 8 94

8

12

16

20

24

28

32IDS=11A

10 -50 -25 0 25 50 75 100 125 1500.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6IDS=250µA


APM4474K

www.anpec.com.tw5



Nor

mal

ized

On

Res

ista

nce



I S -

Sou

rce

Cur

rent

(A

)


Capacitance

C -

Cap

acita

nce

(pF)


VG

S -

Gat

e-S

ourc

e V

olta

ge (

V)


-50 -25 0 25 50 75 100 125 1500.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

RON@Tj=25oC: 9mΩ

VGS=10VIDS=11A

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.40.1

1

10

50

Tj=150oC

Tj=25oC

0 5 10 15 20 25 30 35 400

300

600

900

1200

1500

1800

2100Frequency=1MHz

Coss

Ciss

Crss

Gate Charge

0 5 10 15 20 25 300

1

2

3

4

5

6

7

8

9

10VDS=20VIDS=11A


APM4474K

www.anpec.com.tw6

Package Information

SOP-8

SYMBOL MIN. MAX.

1.75

0.10

0.17 0.25

0.25

A

A1

c

D

E

E1

e

h

L

MILLIMETERS

b 0.31 0.51

SOP-8

0.25 0.50

0.40 1.27

MIN. MAX.

INCHES

0.069

0.004

0.012 0.020

0.007 0.010

0.010 0.020

0.016 0.050

0

0.010

1.27 BSC 0.050 BSC

A2 1.25 0.049

0° 8 ° 0° 8 °

D

e

EE1

SEE VIEW A

cb

h X

45°

A

A1

A2

L

VIEW A0.

25SEATING PLANEGAUGE PLANE


3.80

5.80

4.80

4.00

6.20

5.00 0.189 0.197

0.228 0.244

0.150 0.157


APM4474K

www.anpec.com.tw7



330.0±2.00 50 MIN. 12.4+2.00 -0.00

13.0+0.50 -0.20

1.5 MIN. 20.2 MIN. 12.0±0.30 1.75±0.10 5.5±0.05

P0 P1 P2 D0 D1 T A0 B0 K0 SOP-8

4.0±0.10 8.0±0.10 2.0±0.05 1.5+0.10 -0.00 1.5 MIN. 0.6+0.00

-0.40 6.40±0.20 5.20±0.20 2.10±0.20

(mm)

Devices Per Unit

Package Type Unit Quantity SOP- 8 Type & Reel 2500

H

T1

A

d

A

E1

AB

W

F

T

P0OD0

BA0

P2

K0

B0

SECTION B-B

SECTION A-A

OD1

P1


APM4474K

www.anpec.com.tw8



t 25 C to Peak

tp

Ramp-up

tL

Ramp-downts

Preheat

Tsmax

Tsmin

TL

TP

25

Tem

per

atur

e

Time


°



SOP-8



APM4474K

www.anpec.com.tw9


<350 Volume mm3

350-2000 Volume mm3

>2000 <1.6 mm 260 +0°C* 260 +0°C* 260 +0°C*

1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C* ≥2.5 mm 250 +0°C* 245 +0°C* 245 +0°C*



<350 Volume mm3

≥350 <2.5 mm 240 +0/-5°C 225 +0/-5°C ≥2.5 mm 225 +0/-5°C 225 +0/-5°C

Customer Service




Fax : 886-2-2917-3838




100°C 150°C

60-120 seconds

150°C 200°C

60-180 seconds









Copyright ANPEC Electronics Corp.Rev. B.2 - Mar., 2008

APM4220KA

www.anpec.com.tw1



Features

Applications

• 25V/16A, RDS(ON)=7.5mΩ(typ.) @ VGS=10V RDS(ON)=10mΩ(typ.) @ VGS=4.5V• Super High Dense Cell Design• Avalanche Rated• Reliable and Rugged• Thermal Pad Exposed with Standard SOP-8 Outline• Lead Free and Green Devices Available (RoHS Compliant)

N-Channel MOSFET

SOP−8 Exposed

Pin Description



= Thermal Pad (connected to Drain plane for better heatdissipation)


APM4220


Package Code KA : SOP-8POperating Junction Temp. Range C : -55 to 150 CHandling Code TR : Tape & ReelAssembly Material L : Lead Free Device G : Halogen and Lead Free Device

APM4220 KA : APM4220XXXXX XXXXX - Date Code

Assembly Materialo

G

S

D D(5,6,7,8)

(4)

(1, 2, 3)

DD

SS

S1S2

S3G4

D6D5

D7D8



APM4220KA

www.anpec.com.tw2






TSTG Storage Temperature Range -55 to 150 °C Mounted on Large Heat Sink


TC=100°C 20 W


Mounted on PCB of 1in2 Pad Areaj TA=25°C 50

IDP 300μs Pulse Drain Current Tested TA=100°C 25

A


TA=100°C 8 A


TA=100°C 1.2 W


Mounted on PCB of Minimum Footprintk

TA=25°C 50 IDP 300μs Pulse Drain Current Tested

TA=100°C 25 A


TA=100°C 6 A


TA=100°C 1 W

RθJA Thermal Resistance-Junction to Minimum Footprint 50 °C/W


j.The value of RθJA is when the device mounted on

1in2 pad with 2oz. Copper, t ≤ 10s.

Notes:

k. The value of RθJA is when the device mounted on

minimum pad with 2oz. Copper, t ≤ 10s.



APM4220KA

www.anpec.com.tw3

Notes:a: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%.b: Guaranteed by design, not subject to production testing.

APM4220KA Symbol Parameter Test Condition

Min. Typ. Max. Unit

Drain-Source Avalanche Ratings EAS Avalanche Energy, Single Pulsed ID=15A, VDD=15V 50 mJ


VDS=20V, VGS=0V 1

VDS=20V, VGS=0V IDSS Zero Gate Voltage Drain Current

TA=25°C 30

µA





mΩ






8.4

nC

Dynamic Characteristics b RG Gate Resistance VGS=0V, VDS=0V, f=1MHz 2 Ω





pF






32 46

ns




APM4220KA

www.anpec.com.tw4

1E-4 1E-3 0.01 0.1 1 10 301E-3

0.01

0.1

1

2


θJA : 40 oC/W

0.01

0.02

0.05

0.1

0.2

Single Pulse

Duty = 0.5

Typical CharacteristicsID

- D

rain

Cur

rent

(A)

Safe Operation Area


Power Dissipation

Pto

t - P

ower

(W)


ID -

Dra

in C

urre

nt (A

)

Drain Current




0 20 40 60 80 100 120 140 1600.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

0 20 40 60 80 100 120 140 1600

3

6

9

12

15

18

0.01 0.1 1 10 1000.01

0.1

1

10

100

Rds(o

n) L

imit

1s

TA=25OC

10ms

300µs

1ms

100ms

DC

Nor

mal

ized

Tra

nsie

nt T

herm

al R

esis

tanc

e



APM4220KA

www.anpec.com.tw5



ID -

Dra

in C

urre

nt (A

)


RD

S(O

N) -

On

- Res

ista

nce

(mΩ

)





ID -

Dra

in C

urre

nt (A

)



Nor

mal

ized

Thr

esho

ld V

olta

ge

0 2 4 6 8 100

10

20

30

40

50

VGS

=4,5,6,7,8,9,10V

3V

2.5V

0 10 20 30 40 500

2

4

6

8

10

12

14

16

18

VGS

=10V

VGS

=4.5V

0 1 2 3 4 50

10

20

30

40

50

Tj=125oC

Tj=25oC T

j=-55oC

-50 -25 0 25 50 75 100 125 1500.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6IDS

=250µA



APM4220KA

www.anpec.com.tw6



Nor

mal

ized

On

Res

ista

nce



IS -

Sou

rce

Cur

rent

(A)


C -

Cap

acita

nce

(pF)



VG

S -

Gat

e-so

urce

Vol

tage

(V)

-50 -25 0 25 50 75 100 125 1500.00

0.25

0.50

0.75

1.00

1.25

1.50

1.75

2.00

RON

@Tj=25oC: 7.5mΩ

VGS

= 10V

IDS

= 12A

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.60.1

1

10

50

Tj=150oC

Tj=25oC

0 5 10 15 20 250

500

1000

1500

2000

2500

3000

Frequency=1MHz

Coss

Ciss

Crss

0 5 10 15 20 25 30 35 400

1

2

3

4

5

6

7

8

9

10V

DS=10V

ID = 12A



APM4220KA

www.anpec.com.tw7

td (on) tr td (off) t f

V GS

V DS

90%

10%



DUT

0.01Ωtp

V D D

V DSL

IL

RG

V DD

RD

DUT

V GS

V DS

RG

tp

EAS

V D D

tA V

IAS

V D S

tpV DSX(SU S)



APM4220KA

www.anpec.com.tw8

Package Information

SOP-8P

0.020

0.010

0.020

0.050

0.006

0.063

MAX.

0.40L

0

E

e

h

E1

0.25

D

c

b

0.17

0.31

0.0161.27

0.50

1.27 BSC

0.51

0.25

0.050 BSC

0.010

0.012

0.007

MILLIMETERS

MIN.

SYMBOL

A1

A2

A

0.00

1.25

SOP-8P

MAX.

0.15

1.60

MIN.

0.000

0.049

INCHES

D1 2.25 0.098

2.00 0.079E2

3.50

3.00

0.138

0.118

8o 0o 8o0o

h X

45°

D

e

EE1

SEE VIEWA

cb

D1

E2THERMAL

PAD

A

0L

VIEW A

0.25


A1

A2

Inter-lead flash and protrusions shall not exceed 10 mil per side.

Note : 1. Follow JEDEC MS-012 BA. 2. Dimension "D" does not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 6 mil per side . 3. Dimension "E" does not include inter-lead flash or protrusions.

4.80 5.00

5.80 6.20

3.80 4.00

0.2440.228

0.1570.150

0.1970.189



APM4220KA

www.anpec.com.tw9


330.0±2.00 50 MIN. 12.4+2.00 -0.00

13.0+0.50 -0.20

1.5 MIN. 20.2 MIN. 12.0±0.30 1.75±0.10 5.5±0.05

P0 P1 P2 D0 D1 T A0 B0 K0 SOP-8P

4.0±0.10 8.0±0.10 2.0±0.05 1.5+0.10 -0.00 1.5 MIN. 0.6+0.00

-0.40 6.40±0.20 5.20±0.20 2.10±0.20



SOP-8P Tape & Reel 2500

Devices Per Unit

(mm)

H

T1

A

d

A

E1

AB

W

F

T

P0OD0

BA0

P2

K0

B0

SECTION B-B

SECTION A-A

OD1

P1



APM4220KA

www.anpec.com.tw10






100°C 150°C

60-120 seconds

150°C 200°C

60-180 seconds








t 25 C to Peak

tp

Ramp-up

tL

Ramp-downts

Preheat

Tsmax

Tsmin

TL

TP

25

Tem

per

atur

e

Time


°



APM4220KA

www.anpec.com.tw11


<350 Volume mm3

350-2000 Volume mm3

>2000 <1.6 mm 260 +0°C* 260 +0°C* 260 +0°C*

1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C* ≥2.5 mm 250 +0°C* 245 +0°C* 245 +0°C*



<350 Volume mm3

≥350 <2.5 mm 240 +0/-5°C 225 +0/-5°C ≥2.5 mm 225 +0/-5°C 225 +0/-5°C


Customer Service







www.anpec.com.tw1


APM4350KP

APM4350


Package Code KP : KPAKOperating Junction Temperature Range C : -55 to 150 CHandling Code TR : Tape & ReelAssembly Material L : Lead Free Device

G : Halogen and Lead Free Device

APM4350 KP : APM4350XXXXX

XXXXX - Date Code

Assembly Material

Features

Applications

Pin Description


• 30V/60A,

RDS(ON) =7.5mΩ (typ.) @ VGS = 10VRDS(ON) =11.5mΩ (typ.) @ VGS = 4.5V


• Avalanche Rated



(RoHS Compliant)

• Power Management in Notebook Computer, or

Decktop Computer.

°


S

SG

S

DDD

D

G

D

SSS

D D D


www.anpec.com.tw2

APM4350KP









TC=100°C 80 A



TC=100°C 35 A


TC=100°C 20 W




TA=100°C 8.5 A


TA=100°C 1 W




TA=100°°C 6 A


TA=100°C 0.5 W



www.anpec.com.tw3

APM4350KP


APM4350KP Symbol Parameter Test Conditions

Min. Typ. Max. Unit



Tj=85°C 30 µA




a Drain-Source On-state Resistance VGS=4.5V, IDS=15A 11.5 14.5

mΩ





3 nC





9

nC






pF






22 41

ns

Note： a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing.


www.anpec.com.tw4

APM4350KP


ID -

Dra

in C

urre

nt (A

)

Drain Current


Safe Operation Area




Power Dissipation

Pto

t - P

ower

(W)


ID -

Dra

in C

urre

nt (A

)

Nor

mal

ized

Tra

nsie

nt T

herm

al R

esis

tanc

e

1E-4 1E-3 0.01 0.1 1 10 1000.01

0.1

1

2


θJA :50oC/W

0.01

0.02

0.05

0.1

0.2

Single Pulse

Duty = 0.5

0 20 40 60 80 100 120 140 1600

10

20

30

40

50

60

TC=25oC

0 20 40 60 80 100 120 140 1600

10

20

30

40

50

60

70

TC=25oC,V

G=10V

0.1 1 10 800.1

1

10

100

400

TC=25oC

1ms

1s

10ms

100ms

DC

Rds(on

) Lim

it


www.anpec.com.tw5

APM4350KP

RD

S(O

N) -

On

- Res

ista

nce

(mΩ

)






ID -

Dra

in C

urre

nt (A

)




RD

S(O

N) -

On

- Res

ista

nce

(mΩ

)

Nor

mal

ized

Thr

esho

ld V

olta

ge


0.0 0.5 1.0 1.5 2.0 2.5 3.00

20

40

60

80

100

120

5.5V

4.5V

3.5V

4V

3V

5VV

GS= 6,7,8,9,10V

0 20 40 60 80 100 1202

4

6

8

10

12

14

16

18

20

VGS

=10V

VGS

=4.5V

-50 -25 0 25 50 75 100 125 1500.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

IDS

=250µA

1 2 3 4 5 6 7 8 9 104

6

8

10

12

14

16

18

ID=30A


www.anpec.com.tw6

APM4350KP



Nor

mal

ized

On

Res

ista

nce


C -

Cap

acita

nce

(pF)



IS -

Sou

rce

Cur

rent

(A)



VG

S -

Gat

e - s

ourc

e V

olta

ge (V

)


0.0 0.3 0.6 0.9 1.2 1.5 1.80.2

1

10

100

Tj=150oC

Tj=25oC

0 5 10 15 20 25 300

500

1000

1500

2000

2500

Frequency=1MHz

Crss

Coss

Ciss

-50 -25 0 25 50 75 100 125 1500.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

RON

@Tj=25oC: 7.5mΩ

VGS = 10V IDS = 30A

0 5 10 15 20 25 300

2

4

6

8

10V

DS= 15V

IDS

= 30A


www.anpec.com.tw7

APM4350KP


DUT

0.01Ωtp

VDD

VDSL

IL

RG


VDD

RD

DUT

VGS

VDS

RG

tp


VGS

VDS90%

10%


www.anpec.com.tw8

APM4350KP

Package InformationKPAK

SYMBOL MIN. MAX.

1.20

0.38

4.80 5.00

5.90 6.10

5.70 5.80

0.05

3.49 3.69

A

B

D

E

E1

e

F

F1

G

H

MILLIMETERS

C 0.19 0.25

1.27 BSC

KPAK

0.35 0.45

MIN. MAX.

INCHES

0.047

0.015

0.050 BSC

0.007 0.010

0.189 0.197

0.232 0.240

0.224 0.228

0.002

0.014 0.018

0.137 0.145

1.00 0.039

0.51 0.020

0.15 0.006

G1

K 1.60 0.063

0.05 0.15 0.002 0.006

0.0180.0140.450.35

E1

E

F1

G1

GK

F

H

Be

D

C

A


www.anpec.com.tw9

APM4350KP



330.0±2.00 50 MIN. 12.4+2.00

-0.00 13.0+0.50 -0.20

1.5 MIN. 20.2 MIN. 12.0±0.30 1.75±0.10 5.5±0.10

P0 P1 P2 D0 D1 T A0 B0 K0 KPAK

4.0±0.10 8.0±0.10 2.0±0.10 1.5+0.10 -0.00 1.5 MIN. 0.3±0.05 6.5±0.10 5.3±0.10 1.4±0.10

Devices Per Unit


KPAK Tape & Reel 2500

(mm)

H

T1

A

d

A

E1

AB

W

F

T

P0OD0

BA0

P2

K0

B0

SECTION B-B

SECTION A-A

OD1

P1


www.anpec.com.tw10

APM4350KP


Test item Method Description SOLDERABILITY MIL-STD-883D-2003 245°C, 5 SEC HOLT MIL-STD-883D-1005.7 1000 Hrs Bias @125°C PCT JESD-22-B,A102 168 Hrs, 100%RH, 121°C TST MIL-STD-883D-1011.9 -65°C~150°C, 200 Cycles





100°C 150°C

60-120 seconds

150°C 200°C

60-180 seconds







t 25 C to Peak

tp

Ramp-up

tL

Ramp-downts

Preheat

Tsmax

Tsmin

TL

TP

25

Tem

per

atu

re

Time


°


www.anpec.com.tw11

APM4350KP

Customer Service

Classification Reflow Profiles (Con.)


No.6, Dusing 1st Road, SBIP,Hsin-Chu, TaiwanTel : 886-3-5642000Fax : 886-3-5642050

Taipei Branch :2F, No. 11, Lane 218, Sec 2 Jhongsing Rd.,Sindian City, Taipei County 23146, TaiwanTel : 886-2-2910-3838Fax : 886-2-2917-3838


<350 Volume mm3

350-2000 Volume mm3

>2000 <1.6 mm 260 +0°C* 260 +0°C* 260 +0°C*

1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C* ≥2.5 mm 250 +0°C* 245 +0°C* 245 +0°C*



<350 Volume mm3

≥350 <2.5 mm 240 +0/-5°C 225 +0/-5°C ≥2.5 mm 225 +0/-5°C 225 +0/-5°C



www.anpec.com.tw1


APM4354KP

Features

Applications

Pin Description


N-Channel MOSFET

• 30V/70A,

RDS(ON) =4.5mΩ (typ.) @ VGS = 10VRDS(ON) =6mΩ (typ.) @ VGS = 4.5V


• Avalanche Rated



(RoHS Compliant)

Top View of KPAK


Decktop Computer.

SS

SG

DD D D

G

D

SSS

D D D

APM4354


Package Code KP : KPAKOperating Junction Temperature Range C : -55 to 150 oCHandling Code TR : Tape & ReelAssembly Material G : Halogen and Lead Free Device


XXXXX - Date Code

Assembly Material



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APM4354KP









TC=100°C 90 A



TC=100°C 40 A


TC=100°C 20 W




TA=100°C 11 A


TA=100°C 1 W




TA=100°C 8 A


TA=100°C 0.5 W



www.anpec.com.tw3

APM4354KP


APM4354KP Symbol Parameter Test Conditions

Min. Typ. Max. Unit




Tj=85°C - - 30 µA



VGS=10V, IDS=30A - 4.5 5.5 RDS(ON)

a Drain-Source On-state Resistance VGS=4.5V,IDS=20A - 6 8

mΩ





- 29 - nC






- 19 -

nC







pF






- 27 50

ns



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APM4354KP


ID -

Dra

in C

urre

nt (A

)

Drain Current


Safe Operation Area




Power Dissipation

Pto

t - P

ower

(W)


ID -

Dra

in C

urre

nt (A

)

Nor

mal

ized

Tra

nsie

nt T

herm

al R

esis

tanc

e

0 20 40 60 80 100 120 140 1600

10

20

30

40

50

60

TC=25oC

0 20 40 60 80 100 120 140 1600

10

20

30

40

50

60

70

80

TC=25oC,V

G=10V

0.1 1 10 800.1

1

10

100

400

TC=25oC

1ms

1s

10ms

100ms

DC

Rds(on

) Lim

it

1E-4 1E-3 0.01 0.1 1 10 1001E-3

0.01

0.1

1

2


θJA :50oC/W

0.01

0.02

0.05

0.1

0.2

Single Pulse

Duty = 0.5


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APM4354KP

RD

S(O

N) -

On

- Res

ista

nce

(mΩ

)






ID -

Dra

in C

urre

nt (A

)




RD

S(O

N) -

On

- Res

ista

nce

(mΩ

)

Nor

mal

ized

Thr

esho

ld V

olta

ge


0 30 60 90 120 1500

2

4

6

8

10

12

VGS

=10V

VGS

=4.5V

1 2 3 4 5 6 7 8 9 100

2

4

6

8

10

12

14

16

ID=30A

-50 -25 0 25 50 75 100 125 1500.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6IDS

=250µA

0.0 0.5 1.0 1.5 2.0 2.5 3.00

30

60

90

120

150

4.5V

3.5V

4V

3V

VGS

= 5,6,7,8,9,10V


www.anpec.com.tw6

APM4354KP



Nor

mal

ized

On

Res

ista

nce


C -

Cap

acita

nce

(pF)



IS -

Sou

rce

Cur

rent

(A)



VG

S -

Gat

e - s

ourc

e V

olta

ge (V

)


-50 -25 0 25 50 75 100 125 1500.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

VGS

= 10V

IDS

= 30A

RON

@Tj=25oC: 4.5mΩ

0.0 0.3 0.6 0.9 1.2 1.5 1.81

10

100

200

Tj=150oC

Tj=25oC

0 5 10 15 20 25 300

500

1000

1500

2000

2500

3000

3500

4000

4500

5000

Frequency=1MHz

CrssCoss

Ciss

0 10 20 30 40 50 60 700

1

2

3

4

5

6

7

8

9

10V

DS= 15V

ID= 30A


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APM4354KP


DUT

0.01Ωtp

VDD

VDSL

IL

RG

EAS

VDD

tAV

IAS

VDS

tpVDSX(SUS)


VDD

RD

DUT

VGS

VDS

RG

tp


VGS

VDS90%

10%


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APM4354KP

Package InformationKPAK

SYMBOL MIN. MAX.

1.20

0.38

4.80 5.00

5.90 6.10

5.70 5.80

0.05

3.49 3.69

A

B

D

E

E1

e

F

F1

G

H

MILLIMETERS

C 0.19 0.25

1.27 BSC

KPAK

0.35 0.45

MIN. MAX.

INCHES

0.047

0.015

0.050 BSC

0.007 0.010

0.189 0.197

0.232 0.240

0.224 0.228

0.002

0.014 0.018

0.137 0.145

1.00 0.039

0.51 0.020

0.15 0.006

G1

K 1.60 0.063

0.05 0.15 0.002 0.006

0.0180.0140.450.35

E1

E

F1

G1

GK

F

H

Be

D

C

A


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APM4354KP


A

E1

AB

W

F

T

P0OD0

BA0

P2

K0

B0

SECTION B-B

SECTION A-A

OD1

P1

H

T1

A

d


330.0±2.00 50 MIN. 12.4+2.00 -0.00

13.0+0.50 -0.20

1.5 MIN. 20.2 MIN. 12.0±0.30 1.75±0.10 5.5±0.10


4.0±0.10 8.0±0.10 2.0±0.10 1.5+0.10 -0.00 1.5 MIN. 0.3±0.05 6.5±0.10 5.3±0.10 1.4±0.10

(mm)

Devices Per Unit


KPAK Tape & Reel 2500


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APM4354KP

Taping Direction InformationKPAK


t 25 C to Peak

tp

Ramp-up

tL

Ramp-downts

Preheat

Tsmax

Tsmin

TL

TP

25

Tem

per

atur

e

Time


°





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APM4354KP



100°C 150°C

60-120 seconds

150°C 200°C

60-180 seconds











Volume mm3 350-2000

Volume mm3 >2000

<1.6 mm 260 +0°C* 260 +0°C* 260 +0°C* 1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C*




<350 Volume mm3

≥350 <2.5 mm 240 +0/-5°C 225 +0/-5°C ≥2.5 mm 225 +0/-5°C 225 +0/-5°C

Customer Service




Fax : 886-2-2917-3838


Copyright ANPEC Electronics Corp.Rev. A.1 - May, 2007

www.anpec.com.tw1


APM4356KP

Features

Applications

Pin Description


N-Channel

• 30V/80A,

RDS(ON) = 3.3mΩ (typ.) @ VGS = 10VRDS(ON) = 4.5mΩ (typ.) @ VGS = 4.5V


• Avalanche Rated



Top View of KPAK

Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in platetermination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free solderingoperations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C

S

GS

S

DD

DD

S

GS

S

DD

DD

for MSL classification at lead-free peak reflow temperature.


Decktop Computer.

G

S

D DDD

SS

APM4356


Package Code KP : KPAKOperating Junction Temp. Range C : -55 to 150 CHandling Code TR : Tape & Reel TU : TubeLead Free Code L : Lead Free Device


XXXXX - Date Code

Lead Free Code°


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APM4356KP









TC=100°C 90 A



TC=100°C 45 A


TC=100°C 20 W




TA=100°C 12 A


TA=100°C 1 W




TA=100°C 10 A


TA=100°C 0.5 W



www.anpec.com.tw3

APM4356KP


APM4356KP Symbol Parameter Test Condition

Min. Typ. Max. Unit




TJ=85°C 30 µA




a Drain-Source On-state Resistance VGS=4.5V,IDS=20A 4.5 5.8

mΩ





30 nC


Qg Total Gate Charge 100 140




20

nC


RG Gate Resistance VGS=0V,VDS=0V, F=1MHz 1.1 Ω

C iss Input Capacitance 5860




pF






58 105

ns

Note： a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing.


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APM4356KP


ID -

Dra

in C

urre

nt (A

)

Drain Current


Safe Operation Area




Power Dissipation

Pto

t - P

ower

(W)


ID -

Dra

in C

urre

nt (A

)

Nor

mal

ized

Tra

nsie

nt T

herm

al R

esis

tanc

e

0 20 40 60 80 100 120 140 1600

10

20

30

40

50

60

TC=25oC

1E-4 1E-3 0.01 0.1 1 10 1001E-3

0.01

0.1

1

2


θJA :50oC/W

0.01

0.02

0.05

0.1

0.2

Single Pulse

Duty = 0.5

0 20 40 60 80 100 120 140 1600

20

40

60

80

100

TC=25oC,V

G=10V

0.01 0.1 1 10 1000.1

1

10

100

500

TC=25oC

1ms

1s

10ms

100ms

DC

Rds(on

) Lim

it


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APM4356KP

RD

S(O

N) -

On

- Res

ista

nce

(mΩ

)






ID -

Dra

in C

urre

nt (A

)




RD

S(O

N) -

On

- Res

ista

nce

(mΩ

)

Nor

mal

ized

Thr

esho

ld V

olta

ge


2 3 4 5 6 7 8 9 101

2

3

4

5

6

7

8

9

10

ID=40A

-50 -25 0 25 50 75 100 125 1500.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6IDS

=250µA

0.0 0.5 1.0 1.5 2.0 2.5 3.00

20

40

60

80

100

120

140

160

180

3.5V

4V

3V

VGS

= 4.5,5,6,7,8,9,10V

0 30 60 90 120 150 1801

2

3

4

5

6

7

8

VGS

=10V

VGS

=4.5V


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APM4356KP



Nor

mal

ized

On

Res

ista

nce


C -

Cap

acita

nce

(pF)



IS -

Sou

rce

Cur

rent

(A)



VG

S -

Gat

e - s

ourc

e V

olta

ge (V

)


-50 -25 0 25 50 75 100 125 1500.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

VGS

= 10V

IDS

= 40A

RON

@Tj=25oC: 3.3mΩ

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.60.1

1

10

100

200

Tj=150oC

Tj=25oC

0 5 10 15 20 25 300

1000

2000

3000

4000

5000

6000

7000

8000

9000

Frequency=1MHz

CrssCoss

Ciss

0 20 40 60 80 1000

1

2

3

4

5

6

7

8

9

10V

DS= 15V

ID= 40A


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APM4356KP



VDD

RD

DUT

VGS

VDS

RG

tp


VGS

VDS90%

10%

DUT

0.01Ωtp

VDD

VDSL

IL

RG

EAS

VDD

tAV

IAS

VDS

tpVDSX(SUS)


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APM4356KP

Package Information

KPAK

SYMBOL MIN. MAX.

1.20

0.38

4.80 5.00

5.90 6.10

5.70 5.80

0.05

3.49 3.69

A

B

D

E

E1

e

F

F1

G

H

MILLIMETERS

C 0.19 0.25

1.27 BSC

KPAK

0.35 0.45

MIN. MAX.

INCHES

0.047

0.015

0.050 BSC

0.007 0.010

0.189 0.197

0.232 0.240

0.224 0.228

0.002

0.014 0.018

0.137 0.145

1.00 0.039

0.51 0.020

0.15 0.006

G1

K 1.60 0.063

0.05 0.15 0.002 0.006

0.0180.0140.450.35

E1

E

F1

G1

GK

F

H

Be

D

C

A


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APM4356KP


Devices Per Reel

Package Type Devices Per Reel KPAK 2500


330.0±2.00 50 MIN. 9.2±0.10 13.0+0.50 -0.20

1.5 MIN. 20.2 MIN. 12.0±0.30 1.75±0.10 5.5±0.05


4.0±0.10 8.0±0.10 2.0±0.05 1.5+0.10 1.5 MIN. 0.3±0.05 6.5±0.10 5.3±0.10 1.4±0.10

(mm)

A

E1

AB

W

F

T

P0OD0

BA0

P2

K0

B0

SECTION B-B

SECTION A-A

OD1

P1

H

T1

A

d


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APM4356KP

Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb,100%Sn).

Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.




t 25 C to Peak

tp

Ramp-up

tL

Ramp-down

tsPreheat

Tsmax

Tsmin

TL

TP

25

Tem

per

atu

re

Time


°

(IR/Convection or VPR Reflow)



100°C 150°C

60-120 seconds

150°C 200°C

60-180 seconds







Time 25°C to Peak Temperature 6 minutes max. 8 minutes max.

Notes: All temperatures refer to topside of the package. Measured on the body surface.


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APM4356KP

Customer Service



Taipei Branch :7F, No. 137, Lane 235, Pao Chiao Rd.,Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.Tel : 886-2-89191368Fax : 886-2-89191369

Test item Method Description SOLDERABILITY MIL-STD-883D-2003 245°C, 5 SEC HOLT MIL-STD-883D-1005.7 1000 Hrs Bias @125°C PCT JESD-22-B,A102 168 Hrs, 100%RH, 121°C TST MIL-STD-883D-1011.9 -65°C~150°C, 200 Cycles ESD MIL-STD-883D-3015.7 VHBM > 2KV, VMM > 200V Latch-Up JESD 78 10ms, 1tr > 100mA




<350 Volume mm3

≥350

<2.5 mm 240 +0/-5°C 225 +0/-5°C ≥2.5 mm 225 +0/-5°C 225 +0/-5°C



<350 Volume mm3

350-2000 Volume mm3

>2000

<1.6 mm 260 +0°C* 260 +0°C* 260 +0°C*

1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C*

≥2.5 mm 250 +0°C* 245 +0°C* 245 +0°C* * Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated

classification temperature (this means Peak reflow temperature +0°C. For example 260°C+0°C) at the rated MSL level.



Copyright ANPEC Electronics Corp.Rev. A.3 - Mar., 2009

www.anpec.com.tw1


APM9984CCG

Features

Applications

Pin Description


N-Channel MOSFET

• 20V/6A,

RDS(ON)=16mΩ(typ.) @ VGS=4.5VRDS(ON)=19mΩ(typ.) @ VGS=2.5V



• ESD Rating : 2KV HBM


(RoHS Compliant)

• Power Management in Notebook Computer, Por-

table Equipment and Battery Powered Systems.

Top View of JSOT-8

G2

S2

D2(8) (6)

(2)

(1)

(4)

(3)S1

D1

G1

(7) (5)D1 D2

APM9984C

Handling Code

Temperature Range

Package Code

Package Code CG : JSOT-8Operating Junction Temperature Range C : -55 to 150 oCHandling Code TR : Tape & ReelAssembly Material G : Halogen and Lead Free Device

APM9984C CG : M9984CXXXXX XXXXX - Date Code

Assembly Material


S1G1S2G2D1

D1D2D2


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APM9984CCG







IDM* 300µs Pulsed Drain Current VGS=4.5V

20 A





TA=100°C 0.5 W



APM9984CCG Symbol Parameter Test Conditions

Min. Typ. Max. Unit




TJ=85°C - - 30 µA

VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 0.5 0.7 1 V


VGS=4.5V, IDS=6A - 16 20 RDS(ON)


mΩ







- 4.5 -

nC


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APM9984CCG


APM9984CCG Symbol Parameter Test Conditions

Min. Typ. Max. Unit







pF






- 44 75

ns

trr Reverse Recovery Time - 25 - nS

Qrr Reverse Recovery Charge ISD=6A, dISD/dt=100A/µs

- 13 - nC



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APM9984CCG


ID -

Dra

in C

urre

nt (A

)

Drain Current


Safe Operation Area




Power Dissipation

Pto

t - P

ower

(W)


I D -

Dra

in C

urre

nt (A

)

Nor

mal

ized

Tra

nsie

nt T

herm

al R

esis

tanc

e

0 20 40 60 80 100 120 140 1600.0

0.3

0.6

0.9

1.2

1.5

TA=25oC

0 20 40 60 80 100 120 140 1600

1

2

3

4

5

6

7

TA=25oC,V

G=4.5V

0.01 0.1 1 10 1000.01

0.1

1

10

100

300µs

1msRds(on

) Lim

it

1s

TA=25oC

10ms

100ms

DC

1E-4 1E-3 0.01 0.1 1 10 301E-3

0.01

0.1

1

2


θJA : 100 oC/W

0.01

0.02

0.05

0.1

0.2

Single Pulse

Duty = 0.5


www.anpec.com.tw5

APM9984CCG

RD

S(O

N) -

On

- Res

ista

nce

(mΩ

)






ID -

Dra

in C

urre

nt (A

)




RD

S(O

N) -

On

- Res

ista

nce

(mΩ

)

Nor

mal

ized

Thr

esho

ld V

olta

ge

-50 -25 0 25 50 75 100 125 1500.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6IDS

=250µA

0.0 0.5 1.0 1.5 2.0 2.5 3.00

2

4

6

8

10

12

14

16

18

20

1V

1.5V

VGS

=2,3,4,5,6,7,8,9,10V

0 4 8 12 16 2013

14

15

16

17

18

19

20

21

22

23

VGS

=2.5V

VGS

=4.5V

1 2 3 4 5 6 7 8 9 1012

14

16

18

20

22

24

ID=6A



www.anpec.com.tw6

APM9984CCG



Nor

mal

ized

On

Res

ista

nce


C -

Cap

acita

nce

(pF)



IS -

Sou

rce

Cur

rent

(A)



VG

S -

Gat

e - s

ourc

e V

olta

ge (V

)

0.0 0.3 0.6 0.9 1.2 1.5 1.80.1

1

10

20

Tj=150oC

Tj=25oC

0 4 8 12 16 200

200

400

600

800

1000

1200

1400

1600

1800

2000

Frequency=1MHz

CrssCoss

Ciss

0 5 10 15 20 25 300

1

2

3

4

5

6

7

8

9

10V

DS=10V

IDS

= 6A

-50 -25 0 25 50 75 100 125 1500.4

0.6

0.8

1.0

1.2

1.4

1.6

RON

@Tj=25oC: 16mΩ

VGS

= 4.5V

ID = 6A



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APM9984CCG

Package InformationJSOT-8

E1

eb

D

A2

A1

AE

2c

E

L

Θ

SYMBOL MIN. MAX.

1.10

0.01

0.25 0.40

0.10 0.20

2.95 3.10

2.50 3.00

2.30

0.30 0.60

A

A1

b

c

D

E

E1

E2

e

L

MILLIMETERS

A2 0.92 1.00

0.65 BSC

JSOT-8

2.65 3.05

MIN. MAX.

INCHES

0.043

0.000

0.026 BSC

0.036 0.039

0.010 0.016

0.004 0.008

0.116 0.122

0.098 0.118

0.091

0.104 0.120

0.012 0.024

0.93 0.037

0.10 0.004

2.50 0.098

0 0° 8° 0° 8°

Note: 1. Follow GEM2928 8J 2. Dimension D, D1, and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 10 mil.


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APM9984CCG


A

E1

AB

W

F

T

P0OD0

BA0

P2

K0

B0

SECTION B-B

SECTION A-A

OD1

P1

H

T1

A

d


178.0±2.00 50 MIN. 8.4+2.00 -0.00

13.0+0.50 -0.20

1.5 MIN. 20.2 MIN. 8.0±0.30 1.75±0.10 3.5±0.05

P0 P1 P2 D0 D1 T A0 B0 K0 JSOT-8

4.0±0.10 4.0±0.10 2.0±0.05 1.5+0.10 -0.00 1.0 MIN. 0.6+0.00

-0.40 3.20±0.20 3.10±0.20 1.50±0.20

(mm)

Devices Per UnitPackage Type Unit Quantity

JSOT-8 Tape & Reel 3000


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APM9984CCG



JSOT-8


XXXXXMAAAA MAAAA

XXXXXMAAAAXXXXX

MAAAAXXXXX

MAAAAXXXXX

MAAAAXXXXX

MAAAAXXXXX


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APM9984CCG



100 °C 150 °C

60-120 seconds

150 °C 200 °C

60-120 seconds



183 °C 60-150 seconds

217 °C 60-150 seconds










Package Thickness

Volume mm3 <350

Volume mm3 350-2000

Volume mm3 >2000

<1.6 mm 260 °C 260 °C 260 °C 1.6 mm – 2.5 mm 260 °C 250 °C 245 °C

≥2.5 mm 250 °C 245 °C 245 °C



<350 Volume mm3

≥350 <2.5 mm 235 °C 220 °C

≥2.5 mm 220 °C 220 °C




www.anpec.com.tw11

APM9984CCG

Customer Service




Fax : 886-2-2917-3838



www.anpec.com.tw1


APM2322AA

Features

Applications


Portable Equipment and Battery PoweredSystems.

Pin Description


Top View of SOT-23

N-Channel MOSFET

• 20V/1.7A ,

RDS(ON)= 120mΩ(typ.) @ VGS=4.5V RDS(ON)= 180mΩ(typ.) @ VGS=2.5V RDS(ON)= 280mΩ(typ.) @ VGS=1.8V




(RoHS Compliant)

G

S

D

APM2322A


Package Code A : SOT-23Operating Junction Temperature Range C : -55 to 150 oCHandling Code TR : Tape & ReelAssembly Material L : Lead Free Device G : Halogen and Lead Free Device

APM2322A A : A22X X - Date Code

Assembly Material


D

G

S


www.anpec.com.tw2

APM2322AA








7 A





TA=100°C 0.3 W

RθJA* Thermal Resistance-Junction to Ambient 150 °C/W Note : *Surface Mounted on 1in2 pad area, t ≤ 10sec.

APM2322AA Symbol Parameter Test Conditions

Min. Typ. Max. Unit




TJ=85°C - - 30 µA



VGS=4.5V, IDS=1.7A - 120 160


VGS=1.8V, IDS=0.5A - 280 450

mΩ

DIODE CHARACTERISTICS



Qrr Reverse Recovery Charge ISD=1.7A, dlSD/dt=100A/µs

- 4 - nC


www.anpec.com.tw3

APM2322AA



Min. Typ. Max. Unit


RG Gate resistance VGS=0V,VDS=0V,F=1MHz - 7 - Ω





pF






- 2 5

ns


Qg Total Gate Charge - 1.8 2.5



VDS=10V, VGS=4.5V, IDS=1.7A

- 0.7 -

nC



www.anpec.com.tw4

APM2322AA


I D -

Dra

in C

urre

nt (A

)

Drain Current


Safe Operation Area




Power Dissipation

Pto

t - P

ower

(W)


I D -

Dra

in C

urre

nt (A

)

Nor

mal

ized

Tra

nsie

nt T

herm

al R

esis

tanc

e

0 20 40 60 80 100 120 140 1600.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

TA=25oC

0 20 40 60 80 100 120 140 1600.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

TA=25oC,V

G=4.5V

0.01 0.1 1 10 1000.01

0.1

1

10

30

Rds(o

n) Li

mit

TA=25oC

10ms

300µs

1ms

100ms

DC

1E-4 1E-3 0.01 0.1 1 10 1000.01

0.1

1

2


θJA : 150 oC/W

0.01

0.02

0.05

0.1

0.2

Single Pulse

Duty = 0.5


www.anpec.com.tw5

APM2322AA

RD

S(O

N) -

On

- R

esis

tanc

e (m

Ω)






I D -

Dra

in C

urre

nt (A

)




RD

S(O

N) -

On

Res

ista

nce

(mΩ

)

Nor

mal

ized

Thr

esho

ld V

olta

ge

0.0 0.5 1.0 1.5 2.0 2.5 3.00

1

2

3

4

5

6

7

2V

3VV

GS=4,5,6,7,8,9,10V

-50 -25 0 25 50 75 100 125 1500.4

0.6

0.8

1.0

1.2

1.4

1.6IDS

=250µA

0 1 2 3 4 5 6 750

100

150

200

250

300

350

400

VGS

=1.8V

VGS

=2.5V

VGS

=4.5V

1 2 3 4 5 6 7 8 9 1060

90

120

150

180

210

240

270

300

ID=1.7A



www.anpec.com.tw6

APM2322AA



Nor

mal

ized

On

Res

ista

nce


C -

Cap

acita

nce

(pF)



I S -

Sou

rce

Cur

rent

(A)



VG

S -

Gat

e - s

ourc

e V

olta

ge (V

)

-50 -25 0 25 50 75 100 125 1500.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8V

GS = 4.5V

IDS

= 1.7A

RON

@Tj=25oC: 120mΩ

0.0 0.3 0.6 0.9 1.2 1.5 1.80.1

1

7

Tj=150oC

Tj=25oC

0 1 2 3 40

1

2

3

4

5

6

7

8

9

10V

DS= 10V

IDS

= 1.7A

0 4 8 12 16 20

20

40

60

80

100

120

140

160

180

200

Frequency=1MHz

Crss

Coss

Ciss



www.anpec.com.tw7

APM2322AA

Package InformationSOT-23

0L

VIEW A

0.25


AA2

A1

e

D

EE1

SEEVIEW A

b c

e1

MAX.

0.057

0.051

0.024

0.006

0.009

0.0200.012

L 0.30

0

e

e1

E1

E

D

c

b

0.08

0.30

0.60 0.012

0.95 BSC

1.90 BSC

0.22

0.50

0.037 BSC

0.075 BSC

0.003

MIN.

MILLIMETERS

SYMBOL

A1

A2

A

0.00

0.90

SOT-23

MAX.

1.45

0.15

1.30

MIN.

0.000

0.035

INCHES

°8°0 °8°0

1.40

2.60

1.80

3.00

2.70 3.10 0.122

0.071

0.1180.102

0.055

0.106

Note : Dimension D and E1 do not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 10 mil per side.


www.anpec.com.tw8

APM2322AA


178.0±2.00 50 MIN. 8.4+2.00 -0.00

13.0+0.50 -0.20 1.5 MIN. 20.2 MIN. 8.0±0.30 1.75±0.10 3.5±0.05

P0 P1 P2 D0 D1 T A0 B0 K0 SOT-23

4.0±0.10 4.0±0.10 2.0±0.05 1.5+0.10 -0.00 1.0 MIN. 0.6+0.00

-0.40 3.20±0.20 3.10±0.20 1.50±0.20

(mm)


H

T1

A

d

A

E1

AB

W

F

T

P0OD0

BA0

P2

K0

B0

SECTION B-B

SECTION A-A

OD1

P1

Devices Per Unit




www.anpec.com.tw9

APM2322AA




t 25 C to Peak

tp

Ramp-up

tL

Ramp-downts

Preheat

Tsmax

Tsmin

TL

TP

25

Tem

per

atur

e

Time


°




www.anpec.com.tw10

APM2322AA



100°C 150°C

60-120 seconds

150°C 200°C

60-180 seconds











Volume mm3 350-2000

Volume mm3 >2000

<1.6 mm 260 +0°C* 260 +0°C* 260 +0°C* 1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C*




<350 Volume mm3

≥350 <2.5 mm 240 +0/-5°C 225 +0/-5°C ≥2.5 mm 225 +0/-5°C 225 +0/-5°C

Customer Service




Fax : 886-2-2917-3838



www.anpec.com.tw1


APM2324AA

Features

Applications

Pin Description


Top View of SOT-23

N-Channel MOSFET

• 20V/3A,

RDS(ON)= 50mΩ(Typ.) @ VGS= 4.5V






(RoHS Compliant)



G

S

D


APM2324A

Handling CodeTemperature Range

Package Code


APM2324A A : A24X X - Date Code

Assembly Material

G

S

D


www.anpec.com.tw2

APM2324AA








10 A





TA=100°C 0.3 W


Note : *Surface Mounted on 1in2 pad area, t ≤ 10 Sec.


Min. Typ. Max. Unit




TJ=85°C - - 30 µA



VGS=4.5V, IDS=3A - 50 65

VGS=2.5V, IDS=2A - 65 90 RDS(ON) a Drain-Source On-state Resistance

VGS=1.8V, IDS=0.5A - 120 200

mΩ







- 1.6 -

nC


www.anpec.com.tw3

APM2324AA


Min. Typ. Max. Unit







pF

td(ON) Turn-On Delay Time - 4 8

tr Turn-On Rise Time - 14 26

td(OFF) Turn-Off Delay Time - 21 39

tf Turn-Off Fall Time


- 5 10

ns


Qrr Reverse Recovery Charge ISD=3A, dlSD/dt=100A/µs

- 6 - nC




www.anpec.com.tw4

APM2324AA


I D -

Dra

in C

urre

nt (A

)

Drain Current


Safe Operation Area




Power Dissipation

Pto

t - P

ower

(W)


I D -

Dra

in C

urre

nt (

A)

Nor

mal

ized

Tra

nsie

nt T

herm

al R

esis

tanc

e

0 20 40 60 80 100 120 140 1600.0

0.2

0.4

0.6

0.8

1.0

TA=25oC

0 20 40 60 80 100 120 140 1600.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

TA=25oC,V

G=4.5V

0.01 0.1 1 10 1000.01

0.1

1

10

30

Rds(o

n) Li

mit

1s

TA=25oC

10ms

300µs

1ms

100ms

DC

1E-4 1E-3 0.01 0.1 1 10 1000.01

0.1

1

2


θJA : 150 oC/W

0.01

0.02

0.05

0.1

0.2

Single Pulse

Duty = 0.5


www.anpec.com.tw5

APM2324AA

RD

S(O

N) -

On

- R

esis

tanc

e (m

Ω)






I D -

Dra

in C

urre

nt (A

)




RD

S(O

N) -

On

- R

esis

tanc

e (m

Ω)

Nor

mal

ized

Thr

esho

ld V

olta

ge

0.0 0.5 1.0 1.5 2.0 2.5 3.00

1

2

3

4

5

6

7

8

9

10

1.5V

2V

VGS

= 2.5,3,4,5,6,7,8,9,10V

-50 -25 0 25 50 75 100 125 1500.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

IDS

=250µA

0 1 2 3 4 5 6 7 8 9 1020

40

60

80

100

120

140

ID=3A

0 2 4 6 8 100

20

40

60

80

100

120

140

160

180

200

VGS

=1.8V

VGS

=2.5V

VGS

=4.5V



www.anpec.com.tw6

APM2324AA



Nor

mal

ized

On

Res

ista

nce


C -

Cap

acita

nce

(pF)



I S -

Sou

rce

Cur

rent

(A)



VG

S -

Gat

e - s

ourc

e V

olta

ge (V

)

-50 -25 0 25 50 75 100 125 1500.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

RON

@Tj=25oC: 50mΩ

VGS

= 4.5V

IDS

= 3A

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.60.1

1

10

Tj=150oC

Tj=25oC

0 4 8 12 16 200

50

100

150

200

250

300

350

400

450

500

Frequency=1MHz

CrssCoss

Ciss

0 2 4 6 8 100

1

2

3

4

5

6

7

8

9

10V

DS= 10V

IDS

= 3A



www.anpec.com.tw7

APM2324AA

Package Information

SOT-23

0L

VIEW A

0.25


AA2

A1

e

D

EE1

SEEVIEW A

b c

e1

MAX.

0.057

0.051

0.024

0.006

0.009

0.0200.012

L 0.30

0

e

e1

E1

E

D

c

b

0.08

0.30

0.60 0.012

0.95 BSC

1.90 BSC

0.22

0.50

0.037 BSC

0.075 BSC

0.003

MIN.

MILLIMETERS

SYMBOL

A1

A2

A

0.00

0.90

SOT-23

MAX.

1.45

0.15

1.30

MIN.

0.000

0.035

INCHES

°8°0 °8°0

1.40

2.60

1.80

3.00

2.70 3.10 0.122

0.071

0.1180.102

0.055

0.106



www.anpec.com.tw8

APM2324AA


178.0±2.00 50 MIN. 8.4+2.00 -0.00

13.0+0.50 -0.20

1.5 MIN. 20.2 MIN. 8.0±0.30 1.75±0.10 3.5±0.05

P0 P1 P2 D0 D1 T A0 B0 K0 SOT-23

4.0±0.10 4.0±0.10 2.0±0.05 1.5+0.10 -0.00 1.0 MIN. 0.6+0.00

-0.40 3.20±0.20 3.10±0.20 1.50±0.20

(mm)


H

T1

A

d

A

E1

AB

W

F

T

P0OD0

BA0

P2

K0

B0

SECTION B-B

SECTION A-A

OD1

P1

Package Type Unit Quantity SOT-23 Tape & Reel 3000

Devices Per Unit


www.anpec.com.tw9

APM2324AA


t 25 C to Peak

tp

Ramp-up

tL

Ramp-down

tsPreheat

Tsmax

Tsmin

TL

TP

25

Tem

per

atu

re

Time


°

Test item Method Description SOLDERABILITY MIL-STD-883D-2003 245°C, 5 SEC HOLT MIL-STD-883D-1005.7 1000 Hrs Bias @125°C PCT JESD-22-B,A102 168 Hrs, 100%RH, 121°C TST MIL-STD-883D-1011.9 -65°C~150°C, 200 Cycles ESD MIL-STD-883D-3015.7 VHBM > 2KV, VMM > 200V Latch-Up JESD 78 10ms, 1tr > 100mA





www.anpec.com.tw10

APM2324AA

Customer Service


No.6, Dusing 1st Road, SBIP,Hsin-Chu, TaiwanTel : 886-3-5642000Fax : 886-3-5642050

Taipei Branch :2F, No. 11, Lane 218, Sec 2 Jhongsing Rd.,Sindian City, Taipei County 23146, TaiwanTel : 886-2-2910-3838Fax : 886-2-2917-3838




100°C 150°C

60-120 seconds

150°C 200°C

60-180 seconds






Ramp-down Rate 6°C/second max. 6°C/second max. Time 25°C to Peak Temperature 6 minutes max. 8 minutes max. Notes: All temperatures refer to topside of the package. Measured on the body surface. Table 1. SnPb Eutectic Process – Package Peak Reflow Temperatures


<350 Volume mm3

≥350 <2.5 mm 240 +0/-5°C 225 +0/-5°C ≥2.5 mm 225 +0/-5°C 225 +0/-5°C


<350 Volume mm3

350-2000 Volume mm3

>2000 <1.6 mm 260 +0°C* 260 +0°C* 260 +0°C*

1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C* ≥2.5 mm 250 +0°C* 245 +0°C* 245 +0°C*




www.anpec.com.tw1


APM2300CA

Features

Applications

Pin Description


Top View of SOT-23

N-Channel MOSFET

• 20V/6A ,

RDS(ON)=25mΩ (typ.) @ VGS=10VRDS(ON)=32mΩ (typ.) @ VGS=4.5VRDS(ON)=40mΩ (typ.) @ VGS=2.5VRDS(ON)=65mΩ (typ.) @ VGS=1.8V




(RoHS Compliant)



APM2300C


Package Code A : SOT-23Operating Junction Temperature Range C : -55 to 150 oCHandling Code TR : Tape & ReelAssembly Material G : Halogen and Lead Free Device

APM2300C A : C00X X - Date Code

Assembly Material

D

G

S


G

S

D


www.anpec.com.tw2

APM2300CA








20 A





TA=100°C 0.3 W



APM2300CA Symbol Parameter Test Conditions

Min. Typ. Max. Unit




TJ=85°C - - 30 µA



VGS=10V, IDS=6A - 25 30

VGS=4.5V, IDS=3A - 32 40

VGS=2.5V, IDS=2A - 40 55 RDS(ON)

a Drain-Source On-state Resistance

VGS=1.8V, IDS=1A - 65 110

mΩ







- 3 -

nC


www.anpec.com.tw3

APM2300CA


APM2300CA Symbol Parameter Test Conditions

Min. Typ. Max. Unit







pF






- 15 28

ns



- 8 - nC



www.anpec.com.tw4

APM2300CA


ID -

Dra

in C

urre

nt (A

)

Drain Current


Safe Operation Area




Power Dissipation

Pto

t - P

ower

(W)


ID -

Dra

in C

urre

nt (A

)

Nor

mal

ized

Tra

nsie

nt T

herm

al R

esis

tanc

e

0 20 40 60 80 100 120 140 1600.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

TA=25oC

0 20 40 60 80 100 120 140 1600

1

2

3

4

5

6

7

TA=25oC,V

G=10V

0.1 1 10 1000.01

0.1

1

10

100

Rds(on

) Lim

it

1s

TA=25oC

10ms

1ms

100ms

DC

1E-4 1E-3 0.01 0.1 1 10 1001E-3

0.01

0.1

1

2


θJA : 150 oC/W

0.01

0.02

0.05

0.1

0.2

Single Pulse

Duty = 0.5


www.anpec.com.tw5

APM2300CA

RD

S(O

N) - O

n - R

esis

tanc

e (m

Ω)






ID -

Dra

in C

urre

nt (A

)




RD

S(O

N) -

On

- Res

ista

nce

(mΩ

)

Nor

mal

ized

Thr

esho

ld V

olta

ge


0.0 0.5 1.0 1.5 2.0 2.5 3.00

2

4

6

8

10

12

14

16

18

20

2V

1.5V

VGS

=2.5,3,4,5,6,7,8,9,10V

0 4 8 12 16 200

20

40

60

80

100

120

140

160

VGS

=1.8V

VGS

=10V

VGS

=2.5V

VGS

=4.5V

0 1 2 3 4 5 6 7 8 9 1010

15

20

25

30

35

40

45

50

55

60

ID=6A

-50 -25 0 25 50 75 100 125 1500.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6IDS

= 250µA


www.anpec.com.tw6

APM2300CA



Nor

mal

ized

On

Res

ista

nce


C -

Cap

acita

nce

(pF)



IS -

Sou

rce

Cur

rent

(A)



VG

S -

Gat

e - s

ourc

e V

olta

ge (V

)


-50 -25 0 25 50 75 100 125 1500.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

RON

@Tj=25oC: 25mΩ

VGS

= 10V

IDS

= 6A

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.60.1

1

10

20

Tj=150oC

Tj=25oC

0 4 8 12 16 200

100

200

300

400

500

600

700

800

Frequency=1MHz

CrssCoss

Ciss

0 2 4 6 8 10 12 140

1

2

3

4

5

6

7

8

9

10V

DS =10V

IDS

= 6A


www.anpec.com.tw7

APM2300CA


0L

VIEW A

0.25


AA2

A1

e

D

EE1

SEEVIEW A

b c

e1

MAX.

0.057

0.051

0.024

0.006

0.009

0.0200.012

L 0.30

0

e

e1

E1

E

D

c

b

0.08

0.30

0.60 0.012

0.95 BSC

1.90 BSC

0.22

0.50

0.037 BSC

0.075 BSC

0.003

MIN.

MILLIMETERS

SYMBOL

A1

A2

A

0.00

0.90

SOT-23

MAX.

1.45

0.15

1.30

MIN.

0.000

0.035

INCHES

°8°0 °8°0

1.40

2.60

1.80

3.00

2.70 3.10 0.122

0.071

0.1180.102

0.055

0.106



www.anpec.com.tw8

APM2300CA


178.0±2.00 50 MIN. 8.4+2.00 -0.00

13.0+0.50 -0.20 1.5 MIN. 20.2 MIN. 8.0±0.30 1.75±0.10 3.5±0.05

P0 P1 P2 D0 D1 T A0 B0 K0 SOT-23

4.0±0.10 4.0±0.10 2.0±0.05 1.5+0.10 -0.00 1.0 MIN. 0.6+0.00

-0.40 3.20±0.20 3.10±0.20 1.50±0.20

(mm)


H

T1

A

d

A

E1

AB

W

F

T

P0OD0

BA0

P2

K0

B0

SECTION B-B

SECTION A-A

OD1

P1

Devices Per Unit




www.anpec.com.tw9

APM2300CA




t 25 C to Peak

tp

Ramp-up

tL

Ramp-downts

Preheat

Tsmax

Tsmin

TL

TP

25

Tem

per

atur

e

Time


°




www.anpec.com.tw10

APM2300CA



100°C 150°C

60-120 seconds

150°C 200°C

60-180 seconds











Volume mm3 350-2000

Volume mm3 >2000

<1.6 mm 260 +0°C* 260 +0°C* 260 +0°C* 1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C*




<350 Volume mm3

≥350 <2.5 mm 240 +0/-5°C 225 +0/-5°C ≥2.5 mm 225 +0/-5°C 225 +0/-5°C

Customer Service




Fax : 886-2-2917-3838



www.anpec.com.tw1


APM2306A

Features

Applications



Pin Description


Top View of SOT-23

N-Channel MOSFET

• 30V/3.5A ,

RDS(ON)=42mΩ(typ.) @ VGS=10V RDS(ON)=70mΩ(typ.) @ VGS=5V




(RoHS Compliant)

G

S

D


D

G

S

APM2306

Handling Code



APM2306 A : M06X X - Date Code

Assembly Material


www.anpec.com.tw2

APM2306A








14 A





TA=100°C 0.3 W



APM2306A Symbol Parameter Test Conditions

Min. Typ. Max. Unit




TJ=85°C - - 30 µA



VGS=10V, IDS=3.5A - 42 65 RDS(ON)

a Drain-Source On-State Resistance VGS=5V, IDS=2.8A - 70 90

mΩ







- 1.3 -

nC


www.anpec.com.tw3

APM2306A



Min. Typ. Max. Unit







pF






- 6.2 12

ns



www.anpec.com.tw4

APM2306A

1E-4 1E-3 0.01 0.1 1 10 1001E-3

0.01

0.1

1

2


θJA : 150 oC/W

0.01

0.02

0.05

0.1

0.2

Single Pulse

Duty = 0.5


I D -

Dra

in C

urre

nt (

A)

Drain Current


Safe Operation Area




Power Dissipation

Pto

t - P

ower

(W)


I D -

Dra

in C

urre

nt (A

)

0 20 40 60 80 100 120 140 1600.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

TA=25oC

0 20 40 60 80 100 120 140 1600.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

TA=25oC,V

G=10V

0.01 0.1 1 10 1000.01

0.1

1

10

50

Rds(on

) Lim

it

1s

TA=25oC

10ms

300µs

1ms

100ms

DC

Nor

mal

ized

Tra

nsie

nt T

herm

al R

esis

tanc

e


www.anpec.com.tw5

APM2306A

RD

S(O

N) -

On

- R

esis

tanc

e (m

Ω)






I D -

Dra

in C

urre

nt (A

)




I D -

Dra

in C

urre

nt (A

)

Nor

mal

ized

Thr

esho

ld V

olta

ge

0 1 2 3 4 50

2

4

6

8

10

12

14

3V

4V

VGS

= 5, 6, 7, 8, 9, 10V

0 2 4 6 8 100

20

40

60

80

100

120

VGS

=5V

VGS

=10V

0 1 2 3 4 5 6 70

2

4

6

8

10

12

14

TJ=-55oC

TJ=25oC

TJ=125oC

-50 -25 0 25 50 75 100 125 1500.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

IDS

=250µΑ



www.anpec.com.tw6

APM2306A



Nor

mal

ized

On

Res

ista

nce


C -

Cap

acita

nce

(pF)



I S -

Sou

rce

Cur

rent

(A)



VG

S -

Gat

e - s

ourc

e V

olta

ge (V

)

-50 -25 0 25 50 75 100 125 1500.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

RON

@Tj=25oC: 42mΩ

VGS

= 10V

IDS

= 3.5A

0.0 0.4 0.8 1.2 1.6 2.01

10

20

TJ=150oC

TJ=25oC

0 5 10 15 20 25 300

100

200

300

400

500

600Frequency=1MHz

CrssCoss

Ciss

0 2 4 6 8 10 12 140

2

4

6

8

10V

DS = 15V

ID = 3.5A



www.anpec.com.tw7

APM2306A


0L

VIEW A

0.25


AA2

A1

e

D

EE1

SEEVIEW A

b c

e1

MAX.

0.057

0.051

0.024

0.006

0.009

0.0200.012

L 0.30

0

e

e1

E1

E

D

c

b

0.08

0.30

0.60 0.012

0.95 BSC

1.90 BSC

0.22

0.50

0.037 BSC

0.075 BSC

0.003

MIN.

MILLIMETERS

SYMBOL

A1

A2

A

0.00

0.90

SOT-23

MAX.

1.45

0.15

1.30

MIN.

0.000

0.035

INCHES

°8°0 °8°0

1.40

2.60

1.80

3.00

2.70 3.10 0.122

0.071

0.1180.102

0.055

0.106



www.anpec.com.tw8

APM2306A


178.0±2.00 50 MIN. 8.4+2.00 -0.00

13.0+0.50 -0.20 1.5 MIN. 20.2 MIN. 8.0±0.30 1.75±0.10 3.5±0.05

P0 P1 P2 D0 D1 T A0 B0 K0 SOT-23

4.0±0.10 4.0±0.10 2.0±0.05 1.5+0.10 -0.00 1.0 MIN. 0.6+0.00

-0.40 3.20±0.20 3.10±0.20 1.50±0.20

(mm)


H

T1

A

d

A

E1

AB

W

F

T

P0OD0

BA0

P2

K0

B0

SECTION B-B

SECTION A-A

OD1

P1

Devices Per Unit




www.anpec.com.tw9

APM2306A




t 25 C to Peak

tp

Ramp-up

tL

Ramp-downts

Preheat

Tsmax

Tsmin

TL

TP

25

Tem

per

atur

e

Time


°




www.anpec.com.tw10

APM2306A



100°C 150°C

60-120 seconds

150°C 200°C

60-180 seconds











Volume mm3 350-2000

Volume mm3 >2000

<1.6 mm 260 +0°C* 260 +0°C* 260 +0°C* 1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C*




<350 Volume mm3

≥350 <2.5 mm 240 +0/-5°C 225 +0/-5°C ≥2.5 mm 225 +0/-5°C 225 +0/-5°C

Customer Service




Fax : 886-2-2917-3838



www.anpec.com.tw1


APM2308A

Features

Applications


Portable Equipment and Battery Powered Systems.

Pin Description


Top View of SOT-23-3

N-Channel MOSFET

• 30V/3A ,

RDS(ON)= 60mΩ(typ.) @ VGS= 10V RDS(ON)= 90mΩ(typ.) @ VGS= 4.5V




Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termina-tion finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldering operations.ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classifica-tion at lead-free peak reflow temperature.

APM2308


Package Code A : SOT-23-3Operating Junction Temp. Range C : -55 to 150°CHandling Code TR : Tape & ReelLead Free Code L : Lead Free Device

APM2308 A: M08X XXXXX - Date Code

Lead Free Code

S

D

G


www.anpec.com.tw2

APM2308A








10 A





TA=100°C 0.3 W

RθJA* Thermal Resistance-Junction to Ambient 150 °C/W Note:


APM2308A Symbol Parameter Test Condition

Min. Typ. Max. Unit



TJ=85°C 30 µA


IGSS Gate Leakage Current VGS=±16V, VDS=0V ±10 µA

VGS=10V, IDS=3A 60 80 RDS(ON)


mΩ





9 nC


www.anpec.com.tw3

APM2308A


APM2308A Symbol Parameter Test Condition

Min. Typ. Max. Unit

Dynamic Characteristics b RG Gate Resistance VGS=0V, VDS=0V,F=1MHz 6 Ω





pF






4 8

ns


Qg Total Gate Charge 6 8




1.4

nC

Notes:

a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing.


www.anpec.com.tw4

APM2308A


ID -

Dra

in C

urre

nt (A

)

Drain Current


Safe Operation Area




Power Dissipation

Pto

t - P

ower

(W)


ID -

Dra

in C

urre

nt (A

)

Nor

mal

ized

Tra

nsie

nt T

herm

al R

esis

tanc

e

0 20 40 60 80 100 120 140 1600.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

TA=25oC

0 20 40 60 80 100 120 140 1600.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

TA=25oC,V

G=10V

0.01 0.1 1 10 1000.01

0.1

1

10

20

Rds(

on) L

imit

1s

TA=25oC

10ms

300µs

1ms

100ms

DC

1E-4 1E-3 0.01 0.1 1 10 1000.01

0.1

1

2


θJA : 150 oC/W

0.01

0.02

0.05

0.1

0.2

Single Pulse

Duty = 0.5


www.anpec.com.tw5

APM2308A

RD

S(O

N) - O

n - R

esis

tanc

e (m

Ω)






ID -

Dra

in C

urre

nt (A

)




RD

S(O

N) -

On

Res

ista

nce

(mΩ

)

Nor

mal

ized

Thr

esho

ld V

olta

ge


0 2 4 6 8 1020

30

40

50

60

70

80

90

100

110

120

130

140

VGS

=4.5V

VGS

=10V

0.0 0.5 1.0 1.5 2.0 2.5 3.00

1

2

3

4

5

6

7

8

9

10

2.5V

3V

VGS

= 4.5,5,6,7,8,9,10V

1 2 3 4 5 6 7 8 9 1040

60

80

100

120

140

160

ID=3A

-50 -25 0 25 50 75 100 125 1500.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

IDS

=250µA


www.anpec.com.tw6

APM2308A



Nor

mal

ized

On

Res

ista

nce


C -

Cap

acita

nce

(pF)



IS -

Sou

rce

Cur

rent

(A)



VG

S -

Gat

e - s

ourc

e V

olta

ge (V

)


-50 -25 0 25 50 75 100 125 1500.00

0.25

0.50

0.75

1.00

1.25

1.50

1.75

2.00

VGS

= 10V

IDS

= 3A

RON

@Tj=25oC: 60mΩ

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.40.1

1

10

Tj=150oC

Tj=25oC

0 1 2 3 4 5 6 70

1

2

3

4

5

6

7

8

9

10V

DS=15V

IDS

=3A

0 5 10 15 20 25 300

50

100

150

200

250

300

350

400

450

500

550

600

Frequency=1MHz

CrssCoss

Ciss


www.anpec.com.tw7

APM2308A

Package Information

SOT-23-3

0L

VIEW A

0.25


AA2

A1

e

D

EE1

SEEVIEW A

b c

e1

MAX.

0.057

0.051

0.024

0.006

0.009

0.0200.012

L 0.30

0

e

e1

E1

E

D

c

b

0.08

0.30

0.60 0.012

2.80 BSC

0.95 BSC

1.90 BSC

1.60 BSC

0.22

0.50

2.90 BSC

0.110 BSC

0.037 BSC

0.075 BSC

0.063 BSC

0.114 BSC

0.003

MIN.

MILLIMETERS

SYMBOL

A1

A2

A

0.00

0.90

SOT-23-3

MAX.

1.45

0.15

1.30

MIN.

0.000

0.035

INCHES

°8°0 °8°0


www.anpec.com.tw8

APM2308A


H

T1

A

d

A

E1

AB

W

F

T

P0OD0

BA0

P2

K0

B0

SECTION B-B

SECTION A-A

OD1

P1


178.0±2.00 50 MIN. 8.4+2.00 -0.00

13.0+0.50 -0.20

1.5 MIN. 20.2 MIN. 8.0±0.30 1.75±0.10 3.5±0.05

P0 P1 P2 D0 D1 T A0 B0 K0 SOT- 23-3

4.0±0.10 4.0±0.10 2.0±0.10 1.5+0.10 -0.00 1.5 MIN. 0.6+0.00

-0.40 3.20±0.20 3.10±0.20 1.50±0.20

(mm)


SOT-23-3 Tape & Reel 3000

Devices Per Unit


www.anpec.com.tw9

APM2308A






100°C 150°C

60-120 seconds

150°C 200°C

60-180 seconds








t 25 C to Peak

tp

Ramp-up

tL

Ramp-downts

Preheat

Tsmax

Tsmin

TL

TP

25

Tem

per

atur

e

Time


°


www.anpec.com.tw10

APM2308A


<350 Volume mm3

350-2000 Volume mm3

>2000 <1.6 mm 260 +0°C* 260 +0°C* 260 +0°C*

1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C* ≥2.5 mm 250 +0°C* 245 +0°C* 245 +0°C*



<350 Volume mm3

≥350 <2.5 mm 240 +0/-5°C 225 +0/-5°C ≥2.5 mm 225 +0/-5°C 225 +0/-5°C


Customer Service






www.anpec.com.tw1


APM2318A

Features

Applications



Pin Description



N-Channel MOSFET

• 30V/3A ,

RDS(ON)=35mΩ(typ.) @ VGS=10V RDS(ON)=40mΩ(typ.) @ VGS=4.5V RDS(ON)=60mΩ(typ.) @ VGS=2.5V




(RoHS Compliant)

D

G

S

G

S

D


APM2318


Package Code A : SOT-23-3Operating Junction Temperature Range C : -55 to 150 oCHandling Code TR : Tape & ReelAssembly Material G : Halogen and Lead Free Device


Assembly Material


www.anpec.com.tw2

APM2318A








12 A





TA=100°C 0.3 W




Min. Typ. Max. Unit




TJ=85°C - - 30 µA



VGS=10V, IDS=3A - 35 50

VGS=4.5V, IDS=2A - 40 55 RDS(ON) a Drain-Source On-state Resistance

VGS=2.5V, IDS=1.5A - 60 80

mΩ







- 0.8 -

nC


www.anpec.com.tw3

APM2318A



Min. Typ. Max. Unit







pF






- 20 38

ns



www.anpec.com.tw4

APM2318A

1E-4 1E-3 0.01 0.1 10 1000.01

0.1

1

2


θJA : 150 oC/W

0.01

0.02

0.05

0.1

0.2

Single Pulse

Duty = 0.5


ID -

Dra

in C

urre

nt (A

)

Drain Current


Safe Operation Area




Power Dissipation

Pto

t - P

ower

(W)


ID -

Dra

in C

urre

nt (A

)

0 20 40 60 80 100 120 140 1600.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

TA=25oC

0 20 40 60 80 100 120 140 1600.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

TA=25oC,V

G=10V

0.01 0.1 1 10 1000.01

0.1

1

10

50

Rds(on

) Lim

it

1s

TA=25oC

10ms

300µs

1ms

100ms

DC

Nor

mal

ized

Tra

nsie

nt T

herm

al R

esis

tanc

e


www.anpec.com.tw5

APM2318A

RD

S(O

N) - O

n - R

esis

tanc

e (m

Ω)






ID -

Dra

in C

urre

nt (A

)




ID -

Dra

in C

urre

nt (A

)

Nor

mal

ized

Thr

esho

ld V

olta

ge


0 1 2 3 4 50

2

4

6

8

10

12

2V

1.5V

VGS

= 3,4,5,6,7,8,9,10V

0 2 4 6 8 10 120

10

20

30

40

50

60

70

80

90

100

VGS

=10V

VGS

=2.5V

VGS

=4.5V

0.0 0.5 1.0 1.5 2.0 2.5 3.000

2

4

6

8

10

12

Tj=125oC

Tj=25oC T

j=-55oC

-50 -25 0 25 50 75 100 125 1500.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

IDS

=250µA


www.anpec.com.tw6

APM2318A



Nor

mal

ized

On

Res

ista

nce


C -

Cap

acita

nce

(pF)



IS -

Sou

rce

Cur

rent

(A)



VG

S -

Gat

e - s

ourc

e V

olta

ge (V

)


0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.40.1

1

10

Tj=150oC

Tj=25oC

-50 -25 0 25 50 75 100 125 1500.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

RON

@Tj=25oC: 35mΩ

VGS

= 10V

IDS

= 3A

0 5 10 15 20 25 300

100

200

300

400

500Frequency=1MHz

Crss Coss

Ciss

0 2 4 6 8 10 120

2

4

6

8

10V

DS=15V

IDS

= 3A


www.anpec.com.tw7

APM2318A

Package InformationSOT-23-3

0L

VIEW A

0.25


AA2

A1

e

D

EE1

SEEVIEW A

b c

e1

MAX.

0.057

0.051

0.024

0.006

0.009

0.0200.012

L 0.30

0

e

e1

E1

E

D

c

b

0.08

0.30

0.60 0.012

0.95 BSC

1.90 BSC

0.22

0.50

0.037 BSC

0.075 BSC

0.003

MIN.

MILLIMETERS

SYMBOL

A1

A2

A

0.00

0.90

SOT-23-3

MAX.

1.45

0.15

1.30

MIN.

0.000

0.035

INCHES

°8°0 °8°0

1.40

2.60

1.80

3.00

2.70 3.10 0.122

0.071

0.1180.102

0.055

0.106



www.anpec.com.tw8

APM2318A


A

E1

AB

W

F

T

P0OD0

BA0

P2

K0

B0

SECTION B-B

SECTION A-A

OD1

P1

H

T1

A

d


178.0±2.00 50 MIN. 8.4+2.00 -0.00

13.0+0.50 -0.20 1.5 MIN. 20.2 MIN. 8.0±0.30 1.75±0.10 3.5±0.05

P0 P1 P2 D0 D1 T A0 B0 K0 SOT-23-3

4.0±0.10 4.0±0.10 2.0±0.05 1.5+0.10 -0.00 1.0 MIN. 0.6+0.00

-0.40 3.20±0.20 3.10±0.20 1.50±0.20

(mm)

Devices Per Unit




www.anpec.com.tw9

APM2318A

Taping Direction InformationSOT-23-3


t 25 C to Peak

tp

Ramp-up

tL

Ramp-downts

Preheat

Tsmax

Tsmin

TL

TP

25

Tem

per

atur

e

Time


°





www.anpec.com.tw10

APM2318A



100°C 150°C

60-120 seconds

150°C 200°C

60-180 seconds











Volume mm3 350-2000

Volume mm3 >2000

<1.6 mm 260 +0°C* 260 +0°C* 260 +0°C* 1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C*




<350 Volume mm3

≥350 <2.5 mm 240 +0/-5°C 225 +0/-5°C ≥2.5 mm 225 +0/-5°C 225 +0/-5°C

Customer Service




Fax : 886-2-2917-3838


Copyright ANPEC Electronics Corp.Rev. B.4 - Dec, 2008

www.anpec.com.tw1


APM2320A

Features

Applications

Pin Description



N-Channel MOSFET

• 30V/2.5A,

RDS(ON)=65mΩ (typ.) @ VGS=4.5VRDS(ON)=80mΩ (typ.) @ VGS=2.5V




(RoHS Compliant)



D

G

S

G

S

D


APM2320

Handling Code


Package Code A : SOT-23-3Operating Junction Temperature Range C : -55 to 150 oCHandling Code TR : Tape & ReelAssembly Material G : Halogen and Lead Free Device


Assembly Material


www.anpec.com.tw2

APM2320A








10 A





TA=100°C 0.3 W




Min. Typ. Max. Unit




TJ=85°C - - 30 µA



VGS=4.5V, IDS=2.5A - 65 85 RDS(ON)


mΩ







- 1.2 -

nC


www.anpec.com.tw3

APM2320A



Min. Typ. Max. Unit







pF






- 2 5

ns


Qrr Reverse Recovery Charge ISD=2.5A, dISD/dt =100A/µs

- 6 - nC



www.anpec.com.tw4

APM2320A


ID -

Dra

in C

urre

nt (A

)

Drain Current


Safe Operation Area




Power Dissipation

Pto

t - P

ower

(W)


ID -

Dra

in C

urre

nt (A

)

Nor

mal

ized

Tra

nsie

nt T

herm

al R

esis

tanc

e

0 20 40 60 80 100 120 140 1600.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

TA=25oC

1E-4 1E-3 0.01 0.1 1 10 1000.01

0.1

1

2


θJA : 150 oC/W

0.01

0.02

0.05

0.1

0.2

Single Pulse

Duty = 0.5

0.01 0.1 1 10 1000.01

0.1

1

10

20

Rds(

on) L

imit

1s

TA=25oC

10ms

300µs

1ms

100ms

DC

0 20 40 60 80 100 120 140 1600.0

0.5

1.0

1.5

2.0

2.5

3.0

TA=25oC,V

G=4.5V


www.anpec.com.tw5

APM2320A

RD

S(O

N) - O

n - R

esis

tanc

e (m

Ω)






ID -

Dra

in C

urre

nt (A

)




ID -

Dra

in C

urre

nt (A

)

Nor

mal

ized

Thr

esho

ld V

olta

ge


0.0 0.5 1.0 1.5 2.0 2.5 3.00

1

2

3

4

5

6

7

8

9

10

1.5V

2V

VGS

= 3,4,5,6,7,8,9,10V

-50 -25 0 25 50 75 100 125 1500.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

IDS

=250µA

0 2 4 6 8 1030

40

50

60

70

80

90

100

110

120

VGS

=2.5V

VGS

=4.5V

0.0 0.5 1.0 1.5 2.0 2.5 3.000

1

2

3

4

5

6

7

8

9

10

Tj=125oC

Tj=25oC

Tj=-55oC


www.anpec.com.tw6

APM2320A



Nor

mal

ized

On

Res

ista

nce


C -

Cap

acita

nce

(pF)



IS -

Sou

rce

Cur

rent

(A)



VG

S -

Gat

e - s

ourc

e V

olta

ge (V

)


0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.60.1

1

10

Tj=150oC

Tj=25oC

0 5 10 15 20 25 300

50

100

150

200

250

300

350

400

Frequency=1MHz

Crss

Coss

Ciss

-50 -25 0 25 50 75 100 125 1500.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

RON

@Tj=25oC: 65mΩ

0 1 2 3 4 5 6 7 80

2

4

6

8

10

VGS = 4.5V IDS = 2.5A

VDS = 15V IDS = 2.5A


www.anpec.com.tw7

APM2320A


0L

VIEW A

0.25


AA2

A1

e

D

EE1

SEEVIEW A

b c

e1

MAX.

0.057

0.051

0.024

0.006

0.009

0.0200.012

L 0.30

0

e

e1

E1

E

D

c

b

0.08

0.30

0.60 0.012

0.95 BSC

1.90 BSC

0.22

0.50

0.037 BSC

0.075 BSC

0.003

MIN.

MILLIMETERS

SYMBOL

A1

A2

A

0.00

0.90

SOT-23-3

MAX.

1.45

0.15

1.30

MIN.

0.000

0.035

INCHES

°8°0 °8°0

1.40

2.60

1.80

3.00

2.70 3.10 0.122

0.071

0.1180.102

0.055

0.106



www.anpec.com.tw8

APM2320A


A

E1

AB

W

F

T

P0OD0

BA0

P2

K0

B0

SECTION B-B

SECTION A-A

OD1

P1

H

T1

A

d


178.0±2.00 50 MIN. 8.4+2.00 -0.00

13.0+0.50 -0.20 1.5 MIN. 20.2 MIN. 8.0±0.30 1.75±0.10 3.5±0.05

P0 P1 P2 D0 D1 T A0 B0 K0 SOT-23-3

4.0±0.10 4.0±0.10 2.0±0.05 1.5+0.10 -0.00 1.0 MIN. 0.6+0.00

-0.40 3.20±0.20 3.10±0.20 1.50±0.20

(mm)

Devices Per Unit




www.anpec.com.tw9

APM2320A



t 25 C to Peak

tp

Ramp-up

tL

Ramp-downts

Preheat

Tsmax

Tsmin

TL

TP

25

Tem

per

atur

e

Time


°





www.anpec.com.tw10

APM2320A



100°C 150°C

60-120 seconds

150°C 200°C

60-180 seconds











Volume mm3 350-2000

Volume mm3 >2000

<1.6 mm 260 +0°C* 260 +0°C* 260 +0°C* 1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C*




<350 Volume mm3

≥350 <2.5 mm 240 +0/-5°C 225 +0/-5°C ≥2.5 mm 225 +0/-5°C 225 +0/-5°C

Customer Service




Fax : 886-2-2917-3838



www.anpec.com.tw1


APM2360A

Features

Applications

• Power Management in DC/AC Inventer

Systems.

Pin Description


Top View of SOT-23

N-Channel MOSFET

• 60V/2.5A ,





(RoHS Compliant)

APM2360




Assembly Material

G

S

D


D

G

S


www.anpec.com.tw2

APM2360A








10 A





TA=100°C 0.3 W



Min. Typ. Max. Unit




TJ=85°C - - 30 µA



VGS=10V, IDS=2.5A - 90 120 RDS(ON)


mΩ







- 1.9 -

nC



www.anpec.com.tw3

APM2360A


Min. Typ. Max. Unit







pF






- 3 6

ns


Qrr Reverse Recovery Charge ISD=2.5A, dISD/dt=100A/µs

- 16 - nC




www.anpec.com.tw4

APM2360A


ID -

Dra

in C

urre

nt (A

)

Drain Current


Safe Operation Area




Power Dissipation

Pto

t - P

ower

(W)


ID -

Dra

in C

urre

nt (A

)

Nor

mal

ized

Tra

nsie

nt T

herm

al R

esis

tanc

e

0 20 40 60 80 100 120 140 1600.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

TA=25oC

0 20 40 60 80 100 120 140 1600.0

0.5

1.0

1.5

2.0

2.5

3.0

TA=25oC,V

G=10V

0.01 0.1 1 10 100 3001E-3

0.01

0.1

1

10

30

Rds(on

) Lim

it

1s

TA=25oC

10ms

300µs

1ms

100ms

DC

1E-4 1E-3 0.01 0.1 1 10 301E-3

0.01

0.1

1

2


θJA : 150 oC/W

0.01

0.02

0.05

0.1

0.2

Single Pulse

Duty = 0.5


www.anpec.com.tw5

APM2360A

RD

S(O

N) -

On

- Res

ista

nce

(mΩ

)






ID -

Dra

in C

urre

nt (A

)




RD

S(O

N) -

ON

-Res

ista

nce

(mΩ

)

Nor

mal

ized

Thr

esho

ld V

olta

ge

0.0 0.5 1.0 1.5 2.0 2.5 3.00

1

2

3

4

5

6

7

8

9

10

3.5V

4V

3V

VGS

= 5, 6, 7, 8, 9, 10V

0 2 4 6 8 1040

60

80

100

120

140

160

180

VGS

=4.5V

VGS

=10V

1 2 3 4 5 6 7 8 9 1040

60

80

100

120

140

160

180

200

ID=2.5A

-50 -25 0 25 50 75 100 125 1500.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6IDS

=250µA



www.anpec.com.tw6

APM2360A



Nor

mal

ized

On

Res

ista

nce


C -

Cap

acita

nce

(pF)



IS -

Sou

rce

Cur

rent

(A)



VG

S -

Gat

e - s

ourc

e V

olta

ge (V

)

-50 -25 0 25 50 75 100 125 1500.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

RON

@Tj=25oC: 90mΩ

VGS

= 10V

IDS

= 2.5A

0.0 0.3 0.6 0.9 1.2 1.50.1

1

10

Tj=150oC

Tj=25oC

0 5 10 15 20 25 300

50

100

150

200

250

300

350

400

450

500

Frequency=1MHz

CrssCoss

Ciss

0 1 2 3 4 5 6 7 80

1

2

3

4

5

6

7

8

9

10V

DS= 30V

IDS

= 2.5A



www.anpec.com.tw7

APM2360A


0L

VIEW A

0.25


AA2

A1

e

D

EE1

SEEVIEW A

b c

e1

MAX.

0.057

0.051

0.024

0.006

0.009

0.0200.012

L 0.30

0

e

e1

E1

E

D

c

b

0.08

0.30

0.60 0.012

0.95 BSC

1.90 BSC

0.22

0.50

0.037 BSC

0.075 BSC

0.003

MIN.

MILLIMETERS

SYMBOL

A1

A2

A

0.00

0.90

SOT-23

MAX.

1.45

0.15

1.30

MIN.

0.000

0.035

INCHES

°8°0 °8°0

1.40

2.60

1.80

3.00

2.70 3.10 0.122

0.071

0.1180.102

0.055

0.106



www.anpec.com.tw8

APM2360A


A

E1

AB

W

F

T

P0OD0

BA0

P2

K0

B0

SECTION B-B

SECTION A-A

OD1

P1

H

T1

A

d


178.0±2.00 50 MIN. 8.4+2.00 -0.00

13.0+0.50 -0.20 1.5 MIN. 20.2 MIN. 8.0±0.30 1.75±0.10 3.5±0.05

P0 P1 P2 D0 D1 T A0 B0 K0 SOT-23

4.0±0.10 4.0±0.10 2.0±0.05 1.5+0.10 -0.00 1.0 MIN. 0.6+0.00

-0.40 3.20±0.20 3.10±0.20 1.50±0.20

(mm)

Devices Per Unit




www.anpec.com.tw9

APM2360A



t 25 C to Peak

tp

Ramp-up

tL

Ramp-downts

Preheat

Tsmax

Tsmin

TL

TP

25

Tem

per

atur

e

Time


°





www.anpec.com.tw10

APM2360A



100°C 150°C

60-120 seconds

150°C 200°C

60-180 seconds











Volume mm3 350-2000

Volume mm3 >2000

<1.6 mm 260 +0°C* 260 +0°C* 260 +0°C* 1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C*




<350 Volume mm3

≥350 <2.5 mm 240 +0/-5°C 225 +0/-5°C ≥2.5 mm 225 +0/-5°C 225 +0/-5°C

Customer Service




Fax : 886-2-2917-3838



www.anpec.com.tw1


APM2600C

Features

Applications

Pin Description


• 30V/6A,

RDS(ON)=22mΩ(typ.) @ VGS=10VRDS(ON)=26mΩ(typ.) @ VGS=4.5V




(RoHS Compliant)


N-Channel MOSFET



D

D D

D S

G

(3)G

(4)S

(1,2,5,6)D D D D


APM2600


Package Code C : SOT-23-6Operating Junction Temperature Range C : -55 to 150 oCHandling Code TR : Tape & ReelAssembly Material G : Halogen and Lead Free Device

APM2600 C : M00X X - Date Code

Assembly Material


www.anpec.com.tw2

APM2600C








18 A





TA=100°C 0.5 W



APM2600C Symbol Parameter Test Conditions

Min. Typ. Max. Unit




TJ=85°C - - 30 µA




a Drain-Source On-State Resistance VGS=4.5V, IDS=4.5A - 26 35

mΩ







- 3.7 -

nC


www.anpec.com.tw3

APM2600C


APM2600C Symbol Parameter Test Conditions

Min. Typ. Max. Unit







pF






- 5 10

ns



- 10 - nC



www.anpec.com.tw4

APM2600C


I D -

Dra

in C

urre

nt (A

)

Drain Current


Safe Operation Area


Nor

mal

ized

Effe

ctiv

e T

rans

ient



Power Dissipation

Pto

t - P

ower

(W)


I D -

Dra

in C

urre

nt (A

)

1E-4 1E-3 0.01 0.1 1 10 1001E-3

0.01

0.1

1

2


θJA : 90 oC/W

0.01

0.02

0.05

0.1

0.2

Single Pulse

Duty = 0.5

0 20 40 60 80 100 120 140 1600.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

TA=25oC

0 20 40 60 80 100 120 140 1600

1

2

3

4

5

6

7

TA=25oC,V

G=10V

0.01 0.1 1 10 1000.01

0.1

1

10

50

300µsRds(on

) Lim

it

TA=25oC

10ms

1ms

100ms

DC


www.anpec.com.tw5

APM2600C

RD

S(O

N) -

On

- R

esis

tanc

e (m

Ω)






I D -

Dra

in C

urre

nt (A

)




RD

S(O

N) -

On

Res

ista

nce

(mΩ

)

Nor

mal

ized

Thr

esho

ld V

olta

ge

0.0 0.5 1.0 1.5 2.0 2.5 3.00

2

4

6

8

10

12

14

16

18

2.5V

3V

2V

VGS

= 4, 5, 6, 7, 8, 9, 10V

0 2 4 6 8 10 12 14 16 188

12

16

20

24

28

32

36

40

VGS

=10V

VGS

=4.5V

1 2 3 4 5 6 7 8 9 1010

15

20

25

30

35

40

45

50

ID=6A

-50 -25 0 25 50 75 100 125 1500.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8IDS

= 250µA



www.anpec.com.tw6

APM2600C



Nor

mal

ized

On

Res

ista

nce


C -

Cap

acita

nce

(pF)



I S -

Sou

rce

Cur

rent

(A)



VG

S -

Gat

e - s

ourc

e V

olta

ge (V

)

-50 -25 0 25 50 75 100 125 1500.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

RON

@Tj=25oC: 22mΩ

VGS

= 10V

IDS

= 6A

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.60.1

1

10

20

Tj=25oC

Tj=150oC

0 5 10 15 20 25 300

100

200

300

400

500

600

700

800

900

1000

1100

1200

Frequency=1MHz

CrssCoss

Ciss

0 4 8 12 16 200

1

2

3

4

5

6

7

8

9

10V

DS= 15V

ID = 6A



www.anpec.com.tw7

APM2600C


0L

VIEW A0.

25


AA2

A1

e

D

E1

SEEVIEW A

b c

e1

E

0° 8° 0° 8°

0.020

0.009

0.006

0.024

0.051

0.057

MAX.

0.30L

0

E

e

e1

E1

D

c

b

0.08

0.30

0.0120.60

0.95 BSC

1.90 BSC

0.50

0.22

0.075 BSC

0.037 BSC

0.012

0.003

MILLIMETERS

MIN.

SYMBOL

A1

A2

A

0.00

0.90

SOT-23-6

MAX.

1.30

0.15

1.45

MIN.

0.000

0.035

INCHES

1.40

2.60 3.00

1.80

2.70 3.10

0.118

0.071

0.122

0.102

0.055

0.106

Note : 1. Follow JEDEC TO-178 AB. 2. Dimension D and E1 do not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 10 mil per side.


www.anpec.com.tw8

APM2600C


178.0±2.00 50 MIN. 8.4+2.00 -0.00

13.0+0.50 -0.20 1.5 MIN. 20.2 MIN. 8.0±0.30 1.75±0.10 3.5±0.05

P0 P1 P2 D0 D1 T A0 B0 K0 SOT-23-6

4.0±0.10 4.0±0.10 2.0±0.05 1.5+0.10 -0.00 1.0 MIN. 0.6+0.00

-0.40 3.20±0.20 3.10±0.20 1.50±0.20

(mm)


H

T1

A

d

A

E1

AB

W

F

T

P0OD0

BA0

P2

K0

B0

SECTION B-B

SECTION A-A

OD1

P1

Devices Per Unit




www.anpec.com.tw9

APM2600C



t 25 C to Peak

tp

Ramp-up

tL

Ramp-downts

Preheat

Tsmax

Tsmin

TL

TP

25

Tem

per

atur

e

Time


°



AAAX AAAX AAAX AAAX AAAX AAAX AAAX



www.anpec.com.tw10

APM2600C



100°C 150°C

60-120 seconds

150°C 200°C

60-180 seconds











Volume mm3 350-2000

Volume mm3 >2000

<1.6 mm 260 +0°C* 260 +0°C* 260 +0°C* 1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C*




<350 Volume mm3

≥350 <2.5 mm 240 +0/-5°C 225 +0/-5°C ≥2.5 mm 225 +0/-5°C 225 +0/-5°C

Customer Service




Fax : 886-2-2917-3838


Copyright ANPEC Electronics Corp.Rev. A. 1 - Jun., 2007

www.anpec.com.tw1


APM1402AS

Features

Applications



Pin Description


N-Channel MOSFET

Top View of SC-70

• 20V/1.1A,

RDS(ON)= 135mΩ(typ.) @ VGS= 4.5V RDS(ON)= 180mΩ(typ.) @ VGS= 2.5V RDS(ON)= 280mΩ(typ.) @ VGS= 1.8V




Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termina-tion finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldering operations.ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classifica-tion at lead-free peak reflow temperature.

APM1402A


Package Code S : SC-70Operating Junction Temp. Range C : -55 to 150 CHandling Code TR : Tape & ReelLead Free Code L : Lead Free Device

APM1402A S : 02

Lead Free Code°

D

S

G

Copyright ANPEC Electronics Corp.Rev. A.1 - Jun., 2007

www.anpec.com.tw2

APM1402AS








4.4 A





TA=100°C 0.14 W

RθJA* Thermal Resistance-Junction to Ambient 360 °C/W Note:


APM1402AS Symbol Parameter Test Condition

Min. Typ. Max. Unit




TJ=85°C 30 µA


IGSS Gate Leakage Current VGS=±10V, VDS=0V ±10 µA

VGS=4.5V, IDS=1.1A 135 175

VGS=2.5V, IDS=0.8A 180 250 RDS(ON) a Drain-Source On-state Resistance

VGS=1.8V, IDS=0.5A 280 450

mΩ


VSDa Diode Forward Voltage ISD=0.4A, VGS=0V 0.8 1.3 V



3 nC


www.anpec.com.tw3

APM1402AS

Notes:a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%.b : Guaranteed by design, not subject to production testing.

APM1402AS Symbol Parameter Test Condition

Min. Typ. Max. Unit


RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 6.7 Ω





pF






2 5

ns


Qg Total Gate Charge 1.7 2.4




0.6

nC



www.anpec.com.tw4

APM1402AS

0 20 40 60 80 100 120 140 1600.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

0.40

TA=25oC


ID -

Dra

in C

urre

nt (A

)

Drain Current


Safe Operation Area




Power Dissipation

Pto

t - P

ower

(W)


ID -

Dra

in C

urre

nt (A

)

Nor

mal

ized

Tra

nsie

nt T

herm

al R

esis

tanc

e

0 20 40 60 80 100 120 140 1600.0

0.2

0.4

0.6

0.8

1.0

1.2

TA=25oC,V

G=4.5V

0.01 0.1 1 10 1000.01

0.1

1

10

Rds(

on) L

imit

1s

TA=25oC

10ms

300µs

1ms

100ms

DC

1E-4 1E-3 0.01 0.1 1 10 1001E-3

0.01

0.1

1

2


θJA : 360 oC/W

0.01

0.02

0.05

0.1

0.2

Single Pulse

Duty = 0.5


www.anpec.com.tw5

APM1402AS

0 1 2 3 4 5 6 7 8 9 1050

100

150

200

250

300

350

400

ID=1.1A

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.550

100

150

200

250

300

350

400

VGS

=1.8V

VGS

=2.5V

VGS

=4.5V

RD

S(O

N) -

On

- Res

ista

nce

(mΩ

)





Nor

mal

ized

Thr

esho

ld V

olta

ge


ID -

Dra

in C

urre

nt (A

)





0.0 0.5 1.0 1.5 2.0 2.5 3.00.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

2V

1.5V

VGS

=2.5,3,4,5,6,7,8,9,10V

-50 -25 0 25 50 75 100 125 1500.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8IDS

=250µA

RD

S(O

N) -

On

- Res

ista

nce

(mΩ

)


www.anpec.com.tw6

APM1402AS



Nor

mal

ized

On

Res

ista

nce


C -

Cap

acita

nce

(pF)



IS -

Sou

rce

Cur

rent

(A)



VG

S -

Gat

e-so

urce

Vol

tage

(V

)


-50 -25 0 25 50 75 100 125 1500.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

RON

@Tj = 25°C : 135mΩ

VGS

= 4.5V

IDS

= 1.1A

0.0 0.4 0.8 1.2 1.6 2.00.1

1

5

Tj=150oC

Tj=25oC

0 4 8 12 16 200

20

40

60

80

100

120

140

160

Frequency=1MHz

CrssCoss

Ciss

0.0 0.4 0.8 1.2 1.6 2.00.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0V

DS= 10V

IDS

= 1.1A


www.anpec.com.tw7

APM1402AS

Package Information

SC-70

0L

VIEW A

0.15


AA2

A1

e

D

EE1

SEE VIEW A

b c

e1

SYMBOL MIN. MAX.

1.10

0.00

0.08 0.25

0.10

A

A1

c

D

E

E1

e

e1

L

MILLIMETERS

b 0.15 0.30

0.65 BSC

SC-70

0.15 0.45

0.026 BSC

MIN. MAX.

INCHES

0.043

0.000

0.031 0.040

0.003 0.010

0.006 0.018

0.004

A2 0.80 1.00

0.006 0.012

1.30 BSC 0.051 BSC

1.25 BSC 0.049 BSC

2.10 BSC 0.083 BSC

2.00 BSC 0.079 BSC

0 0 ° 0 °8 ° 8 °


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APM1402AS


Devices Per Unit

Package Type Unit Quantity SC-70 Type & Reel 3000

H

T1

A

d

A

E1

AB

W

F

T

P0OD0

BA0

P2

K0

B0

SECTION B-B

SECTION A-A

OD1

P1


178.0±2.00 50 MIN. 8.4+2.00 13.0+0.50 -0.20

1.5 MIN. 20.2 MIN. 8.0±0.30 1.75±0.10 3.5±0.05

P0 P1 P2 D0 D1 T A0 B0 K0 SC-70

4.0±0.10 4.0±0.10 2.0±0.05 1.5+0.10 1.0-0.00 0.6-0.40 2.4±0.20 2.4±0.20 1.2±0.20

(mm)


www.anpec.com.tw9

APM1402AS






100°C 150°C

60-120 seconds

150°C 200°C

60-180 seconds






Ramp-down Rate 6°C/second max. 6°C/second max. Time 25°C to Peak Temperature 6 minutes max. 8 minutes max. Notes: All temperatures refer to topside of the package. Measured on the body surface.


t 25 C to Peak

tp

Ramp-up

tL

Ramp-downts

Preheat

Tsmax

Tsmin

TL

TP

25

Tem

per

atur

e

Time


°


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APM1402AS


<350 Volume mm3

350-2000 Volume mm3

>2000 <1.6 mm 260 +0°C* 260 +0°C* 260 +0°C*

1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C* ≥2.5 mm 250 +0°C* 245 +0°C* 245 +0°C*



<350 Volume mm3

≥350 <2.5 mm 240 +0/-5°C 225 +0/-5°C ≥2.5 mm 225 +0/-5°C 225 +0/-5°C


Customer Service





Copyright ANPEC Electronics Corp.Rev. A.2 - May., 2009

www.anpec.com.tw1


APM1404AS

Features

Applications



Pin Description


N-Channel MOSFET

Top View of SC70-3

• 20V/1.5A,

RDS(ON)= 65mΩ(typ.) @ VGS= 4.5V RDS(ON)= 80mΩ(typ.) @ VGS= 2.5V RDS(ON)= 110mΩ(typ.) @ VGS= 1.8V




(RoHS Compliant)

D

S

G


APM1404A


Package Code S : SC70-3Operating Junction Temperature Range C : -55 to 150 oCHandling Code TR : Tape & ReelAssembly Material G : Halogen and Lead Free Device

APM1404A S : 04

Assembly Material

G

S

D


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APM1404AS








6 A





TA=100°C 0.14 W



APM1404AS Symbol Parameter Test Conditions

Min. Typ. Max. Unit




TJ=85°C - - 30 µA



VGS=4.5V, IDS=1.5A - 65 85


VGS=1.8V, IDS=0.5A - 110 200

mΩ


VSD a Diode Forward Voltage ISD=0.5A, VGS=0V - 0.8 1.3 V



- 3 - nC


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APM1404AS

Note a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%.Note b : Guaranteed by design, not subject to production testing.

APM1404AS Symbol Parameter Test Conditions

Min. Typ. Max. Unit







pF






- 3 6

ns


Qg Total Gate Charge - 4.4 6.2




- 1.4 -

nC



www.anpec.com.tw4

APM1404AS

I D -

Dra

in C

urre

nt (

A)

Drain Current


Safe Operation Area




Power Dissipation

Pto

t - P

ower

(W)


I D -

Dra

in C

urre

nt (A

)

Nor

mal

ized

Tra

nsie

nt T

herm

al R

esis

tanc

e

0 20 40 60 80 100 120 140 1600.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

0.40

TA=25oC

0 20 40 60 80 100 120 140 1600.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

TA=25oC,V

G=4.5V

1E-4 1E-3 0.01 0.1 1 10 1001E-3

0.01

0.1

1

2


θJA : 360 oC/W

0.01

0.02

0.05

0.1

0.2

Single Pulse

Duty = 0.5

0.01 0.1 1 10 1000.01

0.1

1

10

Rds(

on) L

imit

1s

TA=25oC

10ms

300µs

1ms

100ms

DC



www.anpec.com.tw5

APM1404AS

RD

S(O

N) -

On

- R

esis

tanc

e (m

Ω)





Nor

mal

ized

Thr

esho

ld V

olta

ge


I D -

Dra

in C

urre

nt (A

)




RD

S(O

N) -

On

- R

esis

tanc

e (m

Ω)

0.0 0.5 1.0 1.5 2.0 2.5 3.00

1

2

3

4

5

6

1.5V

VGS

=2,2.5,3,4,5,6,7,8,9,10V

-50 -25 0 25 50 75 100 125 1500.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8IDS

=250µA

1 2 3 4 5 6 7 8 9 1040

50

60

70

80

90

100

110

120

ID=1.5A

0 1 2 3 4 5 620

40

60

80

100

120

140

160

180

200

VGS

=1.8V

VGS

=2.5V

VGS

=4.5V



www.anpec.com.tw6

APM1404AS



Nor

mal

ized

On

Res

ista

nce


C -

Cap

acita

nce

(pF)



I S -

Sou

rce

Cur

rent

(A)



VG

S -

Gat

e-so

urce

Vol

tage

(V)


-50 -25 0 25 50 75 100 125 1500.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

RON

@Tj = 25°C : 65mΩ

VGS

= 4.5V

IDS

= 1.5A

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.60.1

1

6

Tj=150oC

Tj=25oC

0 4 8 12 16 200

50

100

150

200

250

300

350

400

450

500

Frequency=1MHz

CrssCoss

Ciss

0 1 2 3 4 50.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0V

DS= 10V

IDS

= 1.5A


www.anpec.com.tw7

APM1404AS

Package Information

SC70-3

0L

VIEW A0.

15


AA2

A1

e

D

EE1

SEE VIEW A

b c

e1

Note: 1. Followed from JEDEC MO-223. 2. Dimension D and E1 do not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 6 mil per side.

SYMBOL MIN. MAX.

1.10

0.00

0.08 0.25

0.10

A

A1

c

D

E

E1

e

e1

L

MILLIMETERS

b 0.15 0.30

0.65 BSC

SC70-3

0.15 0.45

0.026 BSC

MIN. MAX.

INCHES

0.043

0.000

0.031 0.040

0.003 0.010

0.006 0.018

0.004

A2 0.80 1.00

0.006 0.012

1.30 BSC 0.051 BSC

0 0° 0 °8° 8°

1.90 2.20

2.00 2.40

1.15 1.35

0.075 0.087

0.045 0.053

0.079 0.095

0.80 0.031


www.anpec.com.tw8

APM1404AS



178.0±2.00 50 MIN. 8.4+2.00 13.0+0.50 -0.20

1.5 MIN. 20.2 MIN. 8.0±0.30 1.75±0.10 3.5±0.05

P0 P1 P2 D0 D1 T A0 B0 K0 SC70-3

4.0±0.10 4.0±0.10 2.0±0.05 1.5+0.10 1.0-0.00 0.6-0.40 2.4±0.20 2.4±0.20 1.2±0.20

(mm)

Devices Per Unit


SC70-3 Type & Reel 3000

H

T1

A

d

A

E1

AB

W

F

T

P0OD0

BA0

P2

K0

B0

SECTION B-B

SECTION A-A

OD1

P1


www.anpec.com.tw9

APM1404AS



SC70-3



www.anpec.com.tw10

APM1404AS



100 °C 150 °C

60-120 seconds

150 °C 200 °C

60-120 seconds



183 °C 60-150 seconds

217 °C 60-150 seconds










Package Thickness

Volume mm3 <350

Volume mm3 350-2000

Volume mm3 >2000

<1.6 mm 260 °C 260 °C 260 °C 1.6 mm – 2.5 mm 260 °C 250 °C 245 °C

≥2.5 mm 250 °C 245 °C 245 °C



<350 Volume mm3

≥350 <2.5 mm 235 °C 220 °C

≥2.5 mm 220 °C 220 °C




www.anpec.com.tw11

APM1404AS

Customer Service




Fax : 886-2-2917-3838

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