Fiber-optic links based on silicon photonics for high ... · Fiber-optic links based on silicon...

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Fiber-optic links based on silicon photonics for high-speed readout of trackers G. Drake 1 , M. Garcia-Sciveres 2 , A. Paramonov 1 , R. Stanek 1 , R. Underwood 1 1) Argonne National Laboratory 2) Lawrence Berkeley National Laboratory @ WIT2014 May 15, 2014

Transcript of Fiber-optic links based on silicon photonics for high ... · Fiber-optic links based on silicon...

Page 1: Fiber-optic links based on silicon photonics for high ... · Fiber-optic links based on silicon photonics for high-speed readout of trackers G. Drake 1, M. Garcia-Sciveres2, A. Paramonov1,

Fiber-optic links based on silicon photonics for high-speed readout of trackers

G. Drake1, M. Garcia-Sciveres2, A. Paramonov1, R. Stanek1, R. Underwood1

1) Argonne National Laboratory

2) Lawrence Berkeley National Laboratory

@ WIT2014

May 15, 2014

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• Two methods for optical data transmission

1. Direct modulation of laser output: common in short distance, short wave length communication, all current LHC experiments use this technology (VCSELs)

2. Direct modulation of light: long distance, long wave length

communication. The laser is run continuously.

Modulation of light

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Voltage driver Modulator

Receiver PIN diodes

Optical Tx

Optical Rx

Elec. Tx

Elec. Rx

Laser (CW)

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Transceivers based on Si Photonics (modulators) • We have considered a 4-channel

full-duplex transceiver from Luxtera/Molex after an extensive technology evaluation.

• This industry is driven by the need for cheap, fast, reliable, low-power, and long-distance interconnects

– Lead by Luxtera

– Intel is working on a product

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9.8 mm

4 x 10Gb/s

transceiver from

Molex/Luxtera, 130nm

SOI

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Transceiver based on Si Photonics (modulators)

• All functionality is contained in a single optical chip.

– Outside are capacitors, resistors, a voltage regulator and a PIC

• Uses a continuously-running laser to supply the optical chip

– The Laser is mounted on top of the chip

– Optical fibers are coupled directly to the chip (passively aligned)

• Hermetically packaged

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PIC μcontroller

(configuration and monitoring)

modulator (optical chip)

DFB laser

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Space requirements

• The optical chip and the supporting components (power

regulator and laser) are 3-4 mm thick

• The fiber holder and the bending radius of the fiber define the maximum thickness of the device

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<3.5 mm

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Manufacturer’s specifications • High Bandwidth

– 4 bi-directional channels: 1-14 Gbps each

– Easily scalable to higher speeds and number of channels (future devices)

• Superb Bit-Error Rate (BER) – BER<10-18 (tested by Luxtera: no errors were

observed). We ran for a week and we did not see any errors too.

• Long Wavelength – Uses cheap Single Mode fiber for long-range

and high-speed communications

• Excellent reliability – Distributed Feedback laser

– Mach-Zehnder Iinterferemeter (modulators) No known failure mechanisms

– MTBF > 2.3 x 109 hrs (300M device-hours without a failure)

Low power consumption – 780 mW for the 4-channel transceiver

(including the PIC; less without it)

– Voltage drivers (for modulators)

• Low cost – $250 per device (we purchased 5)

– Most of that is from R&D, not manufacturing

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Silicon photonic devices • Si is transparent to infrared light λ>1100

nm; refractive index 3.5 – Can manufacture optical devices in Si.

• Luxtera has developed a library of optical components (PDK) – Waveguides

– Grating couplers

– Mach-Zehnder interferometers (modulators)

– Ring resonators

– Splitters

– Integrated photo-detectors

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Silicon photonic devices • Integrates transistors and optical elements into the conventional

CMOS process (reliable and well-understood)

– High yield of optical chips and low manufacturing costs

• Like electronics, optics has been reduced into a base library of fundamental components Standard CAD tools support it.

– Designed by anyone

– Manufactured by anyone

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Radiation tolerance of the electro-optical chip

• The HEP community knows how to build radiation-tolerant IC’s using CMOS

• However, it is not clear what radiation tolerance of the optical components is.

• We have studied effects of radiation on the commercial products:

1. Total Ionizing Dose (TID) Gamma-rays from a Co60 source (BNL)

2. Single-event effects (SEE) 200 MeV protons (Mass. General Hospital)

3. Impact from displacement damage (NIEL) is to be investigated

– CMOS transistors are expected to be immune to that.

– May impact laser, photo-detectors, modulators

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Test setup

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The Altera Stratix IV GT board generates PRBS @10.3125 Gb/s

Transceiver 8 SM fiber bundle

PC

I2C

QSFP connector

board Transceiver

QSFP connector

board

USB

8 SMA

Cables

8 SMA

Cables

Irradiated Transceiver Standard Transceiver

The development board

generates PRBS7 and checks

received data for bit-errors

The PC monitors

status of both

transceivers and BER

I2C adapter board

TX RX

Radiation

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Recorded parameters

We have access to internal controls of the electro-optical chip using its I2C-based control interface.

For every test we were recording all available information.

1. Optical power received by the transceiver for four channels.

2. Temperature and voltages

3. Bit-Error Rates for four channels

4. Status of I2C operations (I2C errors)

5. The biases for the laser and four MZIs.

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Irradiated

Transceiver

Standard Transceiver, Altera PRBS generator board, and an I2C interface board

Test Setup for TID

60Co

Source

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• I2C errors during the TID test. – We lost the I2C connection to the optical chip at 165 krad (68h).

• After the exposure, Vhigh of the I2C bus was at 2.7 V instead of proper 3.3V.

• Vlow was OK.

– The device was transmitting and receiving data without errors event after I2C failed.

– Power-cycled the setup at 388 krad but that did not restore I2C communications. Could not re-configure the device after that.

Lost I2C connection to transceiver “C”

I2C Errors from the irradiated transceiver “C”

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• Laser bias and I2C errors for another transceiver – We lost the I2C connection to the optical chip at 137h, 256 krad.

– After long annealing the Vhigh of the I2C bus returned to ~3.2V (nominal).

– Vlow was OK.

– Laser bias has changed slightly during the irradiation session. it is adjusted via an internal feedback loop.

Value of the “laser bias” register of the irradiated transceiver “D”

Lost I2C connection to transceiver “D”

I2C errors from the irradiated transceiver “D”

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• MZI bias and optical power for the transceiver – MZI bias (phase correction) was stable. The TID did not affect

density of charge carriers and optical properties of the photo-diodes.

– The received power (by the high-speed Ge photo detector) was stables The dark current and sensitivity of the photo-diodes did not change significantly

– We expects that the optical part of the transceiver will survive up to at least 1 Mrad.

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Optical power received by the irradiated transceiver “D” from itself

Lost I2C connection to transceiver “D”

“MZI 1” register of the transceiver “D”

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Conclusions from the TID test

• I2C interfaces in one the optical chips failed at 165 krad. That is the weakest link in radiation hardness of the optical chip

• The transceivers were fully operational after the loss of I2C connections till we power-cycled them They were sending data at 10 Gbps without bit errors

Laser and the voltage regulator chip resisted irradiation well.

Modulators and fast photo-diodes were fully operations at TID~380 krad.

• Biases of MZIs were very stable Likely the optical part of the chip has radiation tolerance higher than 1 Mrad.

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Single-Event-Effects

• The latest test was conducted at MGH on May 10, 2014 at MGH. We have not processed all the data yet.

• 400 MeV protons. 0.85e12 p/cm2

• The preliminary observations are

– No bit-errors in the modulators (TX).

– No issues with the I2C interface of the optical chip

– Most of errors were on the receiving side (RX, fast photo-detectors). Often multiple errors (~100) would occur in a raw.

• Forward error correction is not efficient for errors due to ionizing radiation (protons). Redundancy will work better.

• Error-corrections is not needed to send data from the detector to the counting room.

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Future developments from industry

• 10 Gbps/fiber 14 Gbps/fiber 28 Gbps/fiber – Speed of the modulator is limited by its electrical interface. Easy to

scale up.

• Higher number of channels 4 16. All channels are full-duplex. – Higher density of channels (thanks to cross-sectionof SM fiber)

• 40 Gbps/transceiver 56 Gbps/transceiver 400+ Gbps/transceiver (and 4km range). See http://www.molex.com/link/zcd.html

1.6 Tbps

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Outlook / Future perspective

• The commercial fiber-optic interconnects are evolving at impressive rate – Rack-to-rack

– Chip-to-chip

• 40 Gbps links were introduces in ~2009. It is mainsteam now. New, faster, products are entering the market.

• We are evaluating radiation tolerance of the optical components to capitalize on the innovations

• So far the slow-control interface is the bottle-neck in radiation tolerance of the commercial transceivers from Molex/Luxtera.

• Our goal is to read out ATLAS’ tracker for every bunch crossing.

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References

1. Molex, QSFP+ PSM4 Active Optical Cables, http://rhu103.sma-promail.com/SQLImages/kelmscott/Molex/PDF_Images/987650-5361.PDF

2. A. Narasimha et al., A Fully Integrated 4×10-Gb/s DWDM Optoelectronic Transceiver Implemented in a Standard 0.13 µm CMOS SOI Technology, IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 42, NO. 12 (2007).

3. A. Narasimha et al., A 40-Gb/s QSFP Optoelectronic Transceiver in a 0.13 μm CMOS Silicon-on-Insulator Technology, in proceedings of Optical Fiber communication/National Fiber Optic Engineers Conference, 2008, San Diego, USA.

4. T. Baehr-Jones et al., A 25 Gb/s Silicon Photonics Platform, [arXiv:1203.0767]. 5. D. Guckenberger et al., Advantages of CMOS photonics for future transceiver

applications, in proceedings of 36th European Conference and Exhibition on Optical Communication (ECOC), 19-23 September, 2010, Torino, Italy.

6. P. de Dobbelaere et al., Demonstration of first WDM CMOS photonics transceiver with monolithically integrated photo-detectors, in proceedings of 34th European Conference on Optical Communication (ECOC), 21-25 September, 2008, Brussels, Belgium.

7. http://www.molex.com/link/zcd.html 8. http://www.intel.com/content/www/us/en/research/intel-labs-silicon-

photonics-mxc-connector.html

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