FGH40N60

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July 2008

Absolute Maximum Rat ings

Notes:1: Repetitive rating: Pulse width limited by max. junction temperature

Thermal Characteristics

Symbol Description Ratings UnitsVCES Collector to Emitter Voltage 600 V

VGES Gate to Emitter Voltage 20 V

ICCollector Current @ T C = 25

oC 80 A

Collector Current @ T C = 100oC 40 A

ICM (1) Pulsed Collector Current @ T C = 25oC 120 A

P DMaximum Power Dissipation @ T C = 25

oC 290 W

Maximum Power Dissipation @ T C = 100oC 116 W

TJ Operating Junction Temperature -55 to +150oC

Tstg Storage Temperature Range -55 to +150o

CTL

Maximum Lead Temp. for solderingPurposes, 1/8 from case for 5 seconds 300

oC

Symbol Parameter Typ. Max. UnitsRJC (IGBT) Thermal Resistance, Junction to Case - 0.43

oC /W

RJC (Diode) Thermal Resistance, Junction to Case - 1.45oC /W

RJA Thermal Resistance, Junction to Ambient - 40oC /W

G

E

CEC

G

COLLECTOR(FLANGE)

FGH40N60SFD600V, 40A Field Stop IGBT

Features High current capability Low saturation voltage: V CE(sat) =2.3V @ I C = 40A High input impedance Fast switching RoHS compliant

Appl ications Induction Heating, UPS, SMPS, PFC

General Descrip tionUsing Novel Field Stop IGBT Technology, Fairchilds new ses-ries of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications wherelow conduction and switching losses are essential.

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Package Marking and Ordering Information

Electrical Characteristics of the IGBT TC = 25C unless otherwise noted

Device Marking Device PackagePackaging

Type Qty per Tube

Max Qty

per BoxFGH40N60SFD FGH40N60SFDTU TO-247 Tube 30ea -

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BVCES Collector to Emitter Breakdown Voltage V GE = 0V, I C = 250 A 600 - - V

BVCESTJ

Temperature Coefficient of BreakdownVoltage

VGE = 0V, I C = 250 A - 0.6 - V/ oC

ICES Collector Cut-Off Current V CE = VCES , VGE = 0V - - 250 A

IGES G-E Leakage Current V GE = VGES , VCE = 0V - - 400 nA

On Characteristics

VGE(th) G-E Threshold Voltage I C = 250 A, V CE = VGE 4.0 5.0 6.5 V

VCE(sat) Collector to Emitter Saturation VoltageIC = 40A , VGE = 15V - 2.3 2.9 V

IC = 40A , VGE = 15V,TC = 125

oC - 2.5 - V

Dynamic Characteristics

C ies Input CapacitanceVCE = 30V , VGE = 0V,f = 1MHz

- 2110 - pF

Coes Output Capacitance - 200 - pF

C res Reverse Transfer Capacitance - 60 - pF

Switching Characteristics

td(on) Turn-On Delay Time

VCC = 400V, I C = 40A,RG = 10 , VGE = 15V,Inductive Load, T C = 25

oC

- 25 - ns

tr Rise Time - 42 - ns

td(off) Turn-Off Delay Time - 115 - ns

tf Fall Time - 27 54 ns

Eon Turn-On Switching Loss - 1.13 - mJ

Eoff Turn-Off Switching Loss - 0.31 - mJ

E ts Total Switching Loss - 1.44 - mJ

td(on) Turn-On Delay Time

VCC = 400V, I C = 40A,RG = 10 , VGE = 15V,Inductive Load, T C = 125

oC

- 24 - ns

tr Rise Time - 43 - ns

td(off) Turn-Off Delay Time - 120 - nstf Fall Time - 30 - ns

Eon Turn-On Switching Loss - 1.14 - mJ

Eoff Turn-Off Switching Loss - 0.48 - mJ

E ts Total Switching Loss - 1.62 - mJ

Qg Total Gate ChargeVCE = 400V, I C = 40A,VGE = 15V

- 120 - nC

Qge Gate to Emitter Charge - 14 - nC

Qgc Gate to Collector Charge - 58 - nC

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Electrical Characteristics of the Diode TC = 25C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max Units

VFM Diode Forward Voltage I F = 20ATC = 25

oC - 1.95 2.6V

TC = 125oC - 1.85 -

trr Diode Reverse Recovery Time

IES =20A, dI ES /dt = 200A/ s

TC = 25oC - 45 -

nsTC = 125

oC - 140 -

Q rr Diode Reverse Recovery ChargeTC = 25

oC - 75 - nCTC = 125

oC - 375 -

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Typical Performance Characteristics

Figure 1. Typical Output Characteristi cs Figure 2. Typical Output Characteristics

Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristi cs Characteristics

Figur e 5. Saturation Voltage vs. Case Figur e 6. Saturation Voltage vs. V GETemperature at Variant Current Level

0.0 1.5 3.0 4.5 6.0

0

20

40

60

80

100

120

20V

TC = 25oC

15V

12V

10V

VGE = 8V

C o

l l e c

t o r

C u r r e n

t , I C [ A ]

Collector-Emitter Voltage, V CE [V]0.0 1.5 3.0 4.5 6.0

0

20

40

60

80

100

12020V

TC = 125oC

15V12V

10V

VGE = 8V

C o

l l e c

t o r

C u r r e n

t , I C [ A ]

Collector-Emitter Voltage, V CE [V]

0 1 2 3 40

20

40

60

80Common Emitter VGE = 15V

TC = 25oC

TC = 125oC

C o

l l e c t o

r C u r r e n

t , I C [ A ]

Collector-Emitter Voltage, V CE [V]6 8 10 12 13

0

40

80

120Common Emitter VCE = 20V

TC = 25oC

TC = 125oC

C o

l l e c t o r

C u r r e n

t , I C [ A ]

Gate-Emitter Voltage,V GE [V]

4 8 12 16 200

4

8

12

16

20

IC = 20A

40A80A

Common Emitter

TC = -40oC

C o

l l e c

t o r -

E m

i t t e r

V o

l t a g e ,

V C E

[ V ]

Gate-Emitter Voltage, V GE [V]25 50 75 100 125

1.0

1.5

2.0

2.5

3.0

3.5

4.0

80A

40A

IC = 20A

Common Emitter VGE = 15V

C o

l l e c

t o r -

E m

i t t e r

V o

l t a g e ,

V C E

[ V ]

Collector-EmitterCase Temperature, T C [oC]

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Figure 7. Saturation Voltage vs. V GE Figure 8. Saturation Voltage vs. V GE

Figure 9. Capacitance Characteristic s Figure 10. Gate charge Characteristi cs

Figure 11. SOA Characteristi cs Figure 12. Turn-on Characteristic s vs.Gate Resistance

4 8 12 16 200

4

8

12

16

20

IC = 20A

40A 80A

Common Emitter

TC = 25oC

C o

l l e c

t o r -

E m

i t t e r

V o

l t a g e ,

V C E

[ V ]

Gate-Emitter Voltage, V GE [V]4 8 12 16 20

0

4

8

12

16

20

IC = 20A

40A80A

Common Emitter

TC = 125oC

C o

l l e c

t o r -

E m

i t t e r

V o

l t a g e ,

V C E

[ V

]

Gate-Emitter Voltage, V GE [V]

0.1 1 100

1000

2000

3000

4000

5000Common Emitter VGE = 0V, f = 1MHz

TC = 25oC

Crss

Coss

Ciss

C a p a c

i t a n c e

[ p F ]

Collector-Emitter Voltage, V CE [V]30 0 50 100 150

0

3

6

9

12

15Common Emitter

TC = 25oC

300V200V

Vcc = 100V

G a

t e - E m

i t t e r

V o

l t a g e ,

V G E

[ V ]

Gate Charge, Q g [nC]

0 10 20 30 40 5010

100

Common Emitter VCC = 400V, V GE = 15VIC = 40A

TC = 25oC

TC = 125oC

td(on)

tr

S w

i t c

h i n g

T i m e

[ n s

]

Gate Resist ance, R G [ ]

200

1 10 100 10000.01

0.1

1

10

100

1ms

10 ms

DCSingle Nonrepetitive

Pulse T C = 25oC

Curves must be deratedlinearly with increasein temperature

10 s

100 s

C o

l l e c

t o r

C u r r e n

t , I c

[ A ]


400

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Figure 13. Turn-off Characteristi cs vs. Figure 14. Turn-on Characteristi cs vs. Gate Resistance Collector Current

Figure 15. Turn-off Characteristic s vs. Figure 16. Switching Loss vs. Gate Resistance Collector Current

Figure 17. Switching Loss vs. Collector Current Figure 18. Turn off Switchin gSOA Characteristics

0 10 20 30 40 5010

100

1000

Common Emitter VCC = 400V, V GE = 15VIC = 40A

TC = 25oC

TC = 125oC

td(off)

tf

S w

i t c

h i n g

T i m e

[ n s

]


5500

20 40 60 8010

100

500Common Emitter VGE = 15V, R G = 10

TC = 25oC

TC = 125oC

tr

td(on)

S w

i t c

h i n g

T i m e

[ n s

]

Collector Current, I C [A]

20 40 60 8010

100

500Common Emitter VGE = 15V, R G = 10

TC = 25oC

TC = 125oC

td(off)

tf

S w

i t c

h i n g

T i m e

[ n s

]


0 10 20 30 40 500.3

1

10Common Emitter VCC = 400V, V GE = 15V

IC = 40A

TC = 25oC

TC = 125oC E on

Eoff

S w

i t c

h i n g

L o s s

[ m J ]


0.2

20 30 40 50 60 70 80

0.1

1

10

30Common Emitter V

GE = 15V, R

G = 10

TC = 25oC

TC = 125oC

Eon

Eoff

S w

i t c

h i n g

L o s s

[ m J ]


1 10 100 10001

10

100

Safe Operating Area

VGE = 15V, T C = 125oC

C o

l l e c

t o r

C u r r e n

t , I C [ A ]


200

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Figure 19. Forward Characteristi cs Figure 20. Typical Reverse Current vs. Reverse Voltage

Figur e 21. Stored Charge Figur e 22. Reverse Recovery Time

Figur e 23.Transient Thermal Impedance of IGBT

50 200 400 6000.01

0.1

1

10

100200

R e v e r s e

C u r r e n

t ,

I R [

A

]

Reverse Volt age, V R [V]

TJ = 125oC

TJ = 25oC

TJ = 75oC

0 1 2 3 40.2

1

10

80

TJ = 75oC

TJ = 25oC

TC = 25oC

TC = 75oC

TC = 125oC

TJ = 125oC

Forward Voltage, V F [V]

F o r w a r d

C u r r e n

t , I F [ A ]

5 10 20 30 4030

40

50

60

200A/ s

di/dt = 100A/ s

R e v e r s e R e c o v e r y

T i m e ,

t r r

[ n s

]

Forward Current, I F [A]5 10 20 30 40

20

40

60

80

100

200A/ s

di/dt = 100A/ s

S t o r e

d R e c o v e r y

C h a r g e ,

Q r r

[ n C ]

Forward Current, I F [A]

1E-5 1E-4 1E-3 0.01 0.1 11E-3

0.01

0.1

1

0.2

0.5

0.1

0.05

0.010.02

single pulse

T h e r m a

l R e s p o n s e

[ Z t h j c ]

Rectangular Pulse Duration [sec]

Duty Factor, D = t1/t2

Peak T j = Pdm x Zthjc + T C

t1

P DM

t2

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Mechanical Dimensions

TO-247AB (FKS PKG CODE 001)

Dimensions in Millimeters

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Rev. I35

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PRODUCT STATUS DEFINITIONSDefinition of Terms

Build it NowCorePLUSCorePOWERCROSSVOLT CTLCurrent Transfer LogicEcoSPARK

EfficentMaxEZSWITCH *

Fairchild

Fairchild Semiconductor

FACT Quiet SeriesFACT

FAST

FastvCore

FlashWriter

*

FPSF-PFSFRFET

Global Power Resource SM

Green FPSGreen FPS e-SeriesGTOIntelliMAXISOPLANARMegaBuckMICROCOUPLERMicroFETMicroPakMillerDriveMotionMaxMotion-SPMOPTOLOGIC

OPTOPLANAR

PDP SPMPower-SPMPowerTrench

Programmable Active DroopQFET

QSQuiet SeriesRapidConfigureSaving our world, 1mW at a timeSmartMaxSMART STARTSPM

STEALTHSuperFETSuperSOT-3SuperSOT-6SuperSOT-8Sup re MOSSyncFET

The Power Franchise

TinyBoostTinyBuckTinyLogic

TINYOPTOTinyPowerTinyPWMTinyWire

UHC

Ultra FRFETUniFETVCXVisualMax

tm

tm

tm

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FGH40N60

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