FET device and Molecular interaction 나노 물리소자 특강 Introduction Spring, 2008

FET device and Molecular interaction

나노 물리소자 특강 IntroductionSpring, 2008

Young June ParkNSI_NCRC, Seoul National University

Korea Nano Research Association

MOSFET as the core of ITMOSFET as the core of IT

Simple math.For 0.1*0.1um MOSFET- V = Q/C

C= 15 fF/um**2# of electrons in the Gate to change 100mV= 1.5 *10**(-17)/e

=100 개

Many new Comers:Many new Comers:

From Collinge, INC 07From Collinge, INC 07

W Bit Line

Cap

Type A

MOSFET DRAM cell and cell interactionMOSFET DRAM cell and cell interaction

Uni. Of Glasgow, 2000DRAM cell

Quantum effects as the new horizonsQuantum effects as the new horizonsFor MOSFET and conventional electronic devicesFor MOSFET and conventional electronic devices

40nm

5nm5nm20nm

QM for chemistry QM for solid state

MOSFET channel is changed due to MOSFET channel is changed due to Source drain stressSource drain stress

40nm

Nano size effects change Energy bandNano size effects change Energy band

IEEE ELECTRON DEVICE LETTERS, VOL. 25, NO. 4, APRIL 2004 191

A Logic Nanotechnology Featuring Strained-SiliconScott E. Thompson,

MOSFET channel is changed due to MOSFET channel is changed due to Source drain stress(3)Source drain stress(3)

Conventional MOSFET has been usedConventional MOSFET has been usedTo probe the molecule(ISFET)To probe the molecule(ISFET)

IEEE SENSOR CONFERENCE TORONTO, OCTOBER 20031

ISFET, Theory and PracticeProf.Dr.Ir.P.Bergveld Em, University of Twente, Fac.EE, MESA+ Research

Institute,Box 217, 7500 AE Enschede


Stolt, CU, Bio-Chemical SensorsMarch 21, 2006

CNT SET is proposed for molecularCNT SET is proposed for molecularsensingsensing

Carbon Nanotube Single Electron Transistor with Ultra-High Sensitivity for Optical and Bio-Sensor Kazuhiko Matsumoto Osaka

University, ISIR 8-1 Mihogaoka, Ibaraki-shi, Osaka, Japan, 567-0047

Nanowire MOSFETNanowire MOSFET

Nanowire MOSFET Nanowire MOSFET

From Lieber, Havard 2003

강의 진행 요강 Subtitle: Electronics device and

Molecules

Tuesday 2-4:30 pm

CTL, 1st floor 박영준 교수

전기신호를 이용해서 신호 및 에너지를 변환하거나 , 전환하는 소자가 나노 분야에서 사용되고 있다 . 빛 , 화학 ,

분자와 전자소자의 interaction 등에 대해서 콜로키움 형태로 특강을 진행한다 .

1. Introduction: motivation of the lecture 1 주 : 박영준교수

2. Nano semiconductor Device operational principle 1,2 주 : MOSFET operational principle(

박영준교수 , ) 3 주 : Interface States in MOSFET( 박영준교수 ) 4 주 : Recent Advancement in MOSFET, Nanowire FET ( 박영준교수 )

3. Electrochemistry for Nanodevice( 성영은교수 ) 5 주 : Basic Electrochemistry 1 6 주 : Basic Electrochemistry 2 8 주 : characterization techniques(voltametry) 9 주 : Electric double layer structure Faradaic interface Non Faradaic interface (Lecture schedule may change from Tuesday 12-2 pm or Wednesday) 10 주 : Review and Midterm

4. Charge states of Biomolecules and FET sensing 11 주 : DNA(TDB) 12 주 : Protein(TDB)5. ISFET and Molecular-insulator interface ( 박영준교수 ) 13 주 : ISFET Molecular-insulator interface 14 주 : Nanowire FET for Molecular detection ( 박영준교수 )

15 주 . Review session and final

FET device and Molecular interaction 나노 물리소자 특강 Introduction Spring, 2008

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