FDPF10N60NZ - N-Channel enhancement mode power field effect transistors

7/30/2019 FDPF10N60NZ - N-Channel enhancement mode power field effect transistors

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September 2010

FDP10N60NZ

/FDPF10N60NZN-Cha

nnelMOSFET

2010 Fairchild Semiconductor CorporationFDP10N60NZ / FDPF10N60NZ Rev. A

www.fairchildsemi.com1

UniFET-IITM

TO-220

FDP SeriesG D S

G

S

D

G

S

D

TO-220F

FDPF Series

(potted)

G SD

MOSFET Maximum Ratings TC =25oC unless otherwise noted*

*Dran current limited by maximum junction temperature

Thermal Characteristics

Symbol Parameter FDP10N60NZ FDPF10N60NZ Units

VDSS Drain to Source Voltage 600 V

VGSS Gate to Source Voltage 25 V

ID Drain Current- Continuous (TC =25

oC) 10 10*A

- Continuous (TC =100oC) 6 6*

IDM Drain Current - Pulsed (Note 1) 40 40* A

EAS Single Pulsed Avalanche Energy (Note 2) 550 mJ

IAR Avalanche Current (Note 1) 10 A

EAR Repetitive Avalanche Energy (Note 1) 18.5 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 10 V/ns

PD Power Dissipation(TC =25

oC) 185 38 W

- Derate above 25oC 1.5 0.3 W/oC

TJ , TSTG Operating and Storage Temperature Range -55 to +150oC

TLMaximum Lead Temperature for Soldering Purpose,

1/8 from Case for 5 Seconds 300 oC

Symbol Parameter FDP10N60NZ FDPF10N60NZ Units

RJ C Thermal Resistance, Junction to Case 0.68 3.3oC/WRCS Thermal Resistance, Case to Sink Typ 0.5 -

RJ A Thermal Resistance, Junction to Ambient 62.5 62.5

FDP10N60NZ / FDPF10N60NZN-Channel MOSFET

600V, 10A, 0.75

Features

RDS(on) =0.64 ( Typ.)@ VGS =10V, ID =5A

Low Gate Charge ( Typ. 23nC)

Low Crss ( Typ. 10pF)

Fast Switching

100% Avalanche Tested

Improved dv/dt Capability

ESD Improved Capability

RoHS compliant

Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchilds proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power supplies and active power factorcorrection.


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www.fairchildsemi.com3FDP10N60NZ / FDPF10N60NZ Rev. A

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward VoltageDrain Cur rent and Gate Vo ltage Var iat ion vs. Source Cur rent

and Temperature

Figure 5. Capacitance Character ist ics Figure 6. Gate Charge Character isti cs

2 4 6 8 100.1

1

10

100

-55oC

150oC

*Notes:

1. VDS = 20V

2. 250s Pulse Test

25oC

ID,DrainCurrent[A]

VGS, Gate-Source Voltage[V]0.5 1 10

0.5

1

10

30

*Notes:

1. 250s Pulse Test2. TC = 25

oC

ID,DrainCurrent[A]

VDS, Drain-Source Voltage[V]

VGS= 15.0V

10.0V

8.0V

7.0V

6.0V

5.5V

0 5 10 15 200.5

0.6

0.7

0.8

0.9

1.0

*Note: TC = 25oC

VGS = 20V

VGS = 10V RDS(ON)[],

Drain-SourceOn-Resistance

ID, Drain Current [A]

0.2 0.4 0.6 0.8 1.0 1.2 1.40.1

1

10

100

*Notes:1. V

GS= 0V

2. 250s Pulse Test

150oC

IS,

ReverseDrainCurrent[A]

VSD

, Body Diode Forward Vol tage [V]

25oC

10-1

1 10 301

10

100

1000

4000

Coss

Ciss

Ciss = Cgs + Cgd(Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

*Note:

1. VGS = 0V

2. f = 1MHz

Crss

Capacitanc

es[pF]

VDS, Drain-Source Voltage [V]

0 5 10 15 20 250

2

4

6

8

10

*Note: ID = 10A

VDS = 120V

VDS = 300V

VDS = 480V

VGS,Gate-Sou

rceVoltage[V]

Qg, Total Gate Charge [nC]


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Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variationvs. Temperature vs. Temperature

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Safe Operating Area-FDP10N60NZ -FDPF10N60NZ

Figure 11. Maximum Drain Current vs.Case Temperature

-100 -50 0 50 100 1500.90

0.95

1.00

1.05

1.10

1.15

*Notes:

1. VGS = 0V

2. ID = 250A

BVDSS,[Normalized]

Drain-SourceBreakdownVoltag

e

TJ, Junction Temperature [oC]

-100 -50 0 50 100 1500.25

0.5

1.0

1.5

2.0

2.5

2.75

*Notes:

1. VGS = 10V

2. ID = 5A

RDS(on),[Normalized]

Drain-SourceOn-Resistance

TJ, Junction Temperature [oC]

0.1 1 10 100 1000 30000.01

0.1

1

10

100

30s

100s

1ms

10ms

ID,DrainCurrent[A]


Operation in This Area

is Limited by R DS(on)

*Notes:

1. TC = 25oC

2. TJ = 150oC

3. Single Pulse

DC

1 10 100 1000 30000.01

0.1

1

10

100

30s

100s

1ms

10ms

ID,DrainCurrent[A]


Operation in This Area

is Limited by R DS(on)

*Notes:

1. TC = 25o

C

2. TJ = 150oC

3. Single Pulse

DC

25 50 75 100 125 1500

2

4

6

8

10

ID,DrainCur

rent[A]

TC, Case Temperature [oC]


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10-5

10-4

10-3

10-2

10-1

1 100.001

0.01

0.1

1

5

0.01

0.1

0.2

0.05

0.02

*Notes:

1. ZJC(t) = 3.3 oC/W Max.2. Duty Factor, D= t1/t23. TJM - TC = PDM * ZJC(t)

0.5

Single pulse

ThermalResponse[ZJC]

Rectangular Pulse Duration [sec]

Typical Performance Characteristics (Continued)

Figure 12. Transient Thermal Response Curve-FDP10N60NZ

10-5

10-4

10-3

10-2

10-1

1 10

0.005

0.01

0.1

1

2

0.01

0.1

0.2

0.05

0.02 *Notes:

1. ZJC(t) = 0.68oC/W Max.2. Duty Factor, D= t1/t23. TJM - TC = PDM * ZJC(t)

0.5

Single pulse

ThermalResponse[ZJC]

Rectangular Pulse Duration [sec]

t1

PDM

t2

Figure 13. Transient Thermal Response Curve-FDPF10N60NZ

t1

PDM

t2


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Gate Charge Test Cir cuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms


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Peak Diode Recovery d v/dt Test Circuit & Waveforms

DUT

VDS

+

_

Driver

RG

Same Typeas DUT

VGS dv/dt controlled by RGISD controlled by pulse period

VDD

L

I SD

10VVGS

( Driver )

I SD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse Width

Gate Pulse Period--------------------------

DUT

VDS

+

_

Driver

RG

Same Typeas DUT

VGS dv/dt controlled by RGISD controlled by pulse period

VDD

LL

I SD

10VVGS

( Driver )

I SD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse Width

Gate Pulse Period--------------------------D =Gate Pulse Width

Gate Pulse Period--------------------------


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Mechanical Dimensions

TO-220


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Package Dimensions

Dimensions in Millimeters

TO-220F

* Front/Back Side Isolation Voltage : AC 2500V


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TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not

intended to be an exhaustive list of all such trademarks.

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY

PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS P ATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDS WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY

THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICYFAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THEEXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

1. Life support devices or systems are devices or systems which, (a) areintended for surgical implant into the body or (b) support or sustain life,and (c) whose failure to perform when properly used in accordance withinstructions for use provided in the labeling, can be reasonablyexpected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, orsystem whose failure to perform can be reasonably expected to causethe failure of the life support device or system, or to affect its safety oreffectiveness.

PRODUCT STATUS DEFINITIONSDefinition of Terms

AccuPowerAuto-SPMBuild it NowCorePLUSCorePOWERCROSSVOLTCTLCurrent Transfer LogicDEUXPEED

Dual CoolEcoSPARK

EfficentMaxESBC

Fairchild

Fairchild Semiconductor

FACT Quiet SeriesFACT

FASTFastvCoreFETBenchFlashWriter*FPS

F-PFSFRFET

Global Power ResourceSM

Green FPSGreen FPS e-SeriesGmaxGTOIntelliMAXISOPLANARMegaBuckMICROCOUPLERMicroFETMicroPakMicroPak2MillerDriveMotionMaxMotion-SPMOptiHiTOPTOLOGIC

OPTOPLANAR

PDP SPM

Power-SPMPowerTrench

PowerXSProgrammable Active DroopQFET

QSQuiet SeriesRapidConfigure

Saving our world, 1mW/W/kW at a timeSignalWiseSmartMaxSMART STARTSPM

STEALTHSuperFETSuperSOT-3SuperSOT-6

SuperSOT-8SupreMOSSyncFETSync-Lock

*

The Power Franchise

TinyBoostTinyBuckTinyCalcTinyLogic

TINYOPTOTinyPowerTinyPWMTinyWireTriFault DetectTRUECURRENT*SerDes

UHC

Ultra FRFETUniFETVCXVisualMaxXS

Datasheet Identification Product Status Definition

Advance Information Formative / In DesignDatasheet contains the design specifications for product development. Specificationsmay change in any manner without notice.

Preliminary First ProductionDatasheet contains preliminary data; supplementary data will be published at a laterdate. Fairchild Semiconductor reserves the right to make changes at any time withoutnotice to improve design.

No Identification Needed Full ProductionDatasheet contains final specifications. Fairchild Semiconductor reserves the right tomake changes at any time without notice to improve the design.

Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by FairchildSemiconductor. The datasheet is for reference information only.

ANTI-COUNTERFEITING POLICYFairchild Semiconductor Corporations Anti-Counterfeiting Policy. Fairchilds Anti-Counterfeiting Policy is also stated on our external website,www.Fairchildsemi.com, under Sales Support.Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of theirparts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failedapplication, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from theproliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized FairchildDistributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized FairchildDistributors are genuine parts, have full traceability, meet Fairchilds quality standards for handing and storage and provide access to Fairchilds full range ofup-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address andwarranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild iscommitted to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

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FDPF10N60NZ - N-Channel enhancement mode power field effect transistors

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