FACULTY OF ENGINEERING1 Contact address in Japan (Miyazaki) : University of Miyazaki Address : 1-1,...
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1 Contact address in Japan (Miyazaki) : University of Miyazaki Address : 1-1, Gakuen – Kibanadai – Nishi Miyazaki 889-2192 Web site : http://www.miyazaki-u.ac.jp/english/ Email: kokusai@cc.miyazaki-u.ac.jp “Material Science” Research Unit---Characterization--- FACULTY OF ENGINEERING Characterization of Semiconductor Materials and Devices Material /device Photothermal spectra Photoluminescence Photo reflectance Raman Scattering High-Resolution X-Ray Diffraction Scanning Electron Microscopy Transmission Electron Microscopy technics 0.9 1.0 1.1 1.2 1.3 1.4 10nm 7nm 5nm 3nm PPT Signal Intensity (arb. unit) Photon Energy (eV) e1-hh1 e1-hh1 e1-lh1 e3-hh3 e2-hh2 e2-hh2 e1-lh1 As-grown sample Room Temperature e1-hh1 e1-hh1 Photothermal spectra of GaInNAs SQW (Single quantum well) 3 nm -- 10 nm MQW solar cell Nano-Disk solar cell CIGS solar cell ZnO QW LED and Laser Nano-Wire LED Si Clathrate The photo-reflectance (PR) technique to determine the band-gap energy of semiconductor. PR detects the modulated reflectance from the semiconductor surface induced by the laser irradiation. Quantum Efficiency (QE) measurement system. QE is the ratio of the number of carriers collected by the solar cell to the number of irradiated photons. 500 nm 100 periods MQW with Graded Buffer layers 10 nm GaAsP InGaAs 10 nm InGaAs GaAsP SEM image of the 100 periods quantum wells (QWs) for the ultra-high efficient multiple-junction solar cells Photoluminescence spectra of P-doped ZnO nanowires . • Fabrication of nanowires • Challenge to p-type doping Fabrication and characterization of new functional semiconductor materials High-resolution transmission electron microscope (HR-TEM) image of Al- doped ZnO nanowires. Raman Spectroscopy of Wurtzite and Zinc- blende GaAs Nanowaires 240 260 280 300 Normalized Raman Intensity (a. u.) Raman Shift [cm -1 ] 5 μm GaAs-NWs A B C A B B B B A A ・The transversal optical (TO) and longitudinal optical (LO) mode are related to the both Zinc-blende and Wurtzite structures. ・E 2 H is the transvesal optical mode related to the Wurtzite structure. ・Surface optical(SO) mode is attri- -buted to the crystalline surface. Multi-Wavelength Integrated Light Source for Optical Sensing Application: (1) Multi-gas sensor array using multi- wavelength resonant cavity gas cell device (2) Optical coherence tomography using wide wavelength range infrared laser array
Transcript of FACULTY OF ENGINEERING1 Contact address in Japan (Miyazaki) : University of Miyazaki Address : 1-1,...
1
Contact address in Japan (Miyazaki) : University of Miyazaki
Address : 1-1, Gakuen – Kibanadai – Nishi Miyazaki 889-2192
Web site : http://www.miyazaki-u.ac.jp/english/ Email: [email protected]
“Material Science” Research Unit---Characterization---
FACULTY OF ENGINEERING
Characterization of Semiconductor Materials and Devices
Material /device
Photothermal spectra
Photoluminescence
Photo reflectance
Raman Scattering
High-Resolution X-Ray Diffraction
Scanning Electron Microscopy
Transmission Electron Microscopy
technics
0.9 1.0 1.1 1.2 1.3 1.4
10nm
7nm
5nm
3nm
PP
T S
igna
l In
tensity (
arb
. u
nit)
Photon Energy (eV)
e1-hh1
e1-hh1
e1-lh1e3-hh3
e2-hh2
e2-hh2e1-lh1
As-grown sampleRoom Temperature
e1-hh1
e1-hh1
Photothermal spectra of GaInNAs SQW (Single quantum
well) 3 nm -- 10 nm
MQW solar cell
Nano-Disk solar cell
CIGS solar cell
ZnO
QW LED and Laser
Nano-Wire LED
Si Clathrate
The photo-reflectance (PR) technique to
determine the band-gap energy of
semiconductor. PR detects the modulated
reflectance from the semiconductor surface
induced by the laser irradiation.
Quantum Efficiency (QE) measurement
system. QE is the ratio of the number of
carriers collected by the solar cell to the
number of irradiated photons. 500 nm
100 p
eri
od
s M
QW
with G
raded B
uffe
r la
yers
10 nm
GaAsP
InGaAs
10 nm
InGaAs
GaAsP
SEM image of the 100 periods quantum wells (QWs) for the
ultra-high efficient multiple-junction solar cells
Photoluminescence spectra
of P-doped ZnO nanowires .
• Fabrication of nanowires
• Challenge to p-type doping
Fabrication and characterization of
new functional semiconductor materials
High-resolution transmission electron
microscope (HR-TEM) image of Al-
doped ZnO nanowires.
Raman Spectroscopy of Wurtzite and Zinc-
blende GaAs Nanowaires
240 260 280 300
Nor
mal
ized
Ram
an Int
ensi
ty (a.
u.)
Raman Shift [cm-1]
5 μm
GaAs-NWs
A B C A B
B
B
B A
A
・The transversal optical (TO) and
longitudinal optical (LO) mode
are related to the both Zinc-blende
and Wurtzite structures.
・E2H is the transvesal optical mode
related to the Wurtzite structure.
・Surface optical(SO) mode is attri-
-buted to the crystalline surface.
Multi-Wavelength Integrated Light Source for
Optical Sensing
Application:
(1) Multi-gas sensor array using multi-
wavelength resonant cavity gas cell device
(2) Optical coherence tomography using
wide wavelength range infrared laser array
