Factsheet AW-66 - 4N Gold Ball Bonding Wire for High ...€¦ · AW-66 Characteristics for 25 µm...
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AW-66 4N Gold Ball Bonding Wire for High Reliabilty AW-66 Benefits Long-term stability of ball bonds through robust intermetallic growth Excellent bondability on a wide range of wafer metallizations Large process windows for 1st and 2nd bonds Versatile looping capabilities Applicable for wire diameter reduction programs (cost reduuction) For ultra-fine-pitch applications – AW-66X with superior tolerances 40 μm diameter ball bond after 1000 hrs @ 175 °C, cross-section AW-66 Thermal Aging Data 11 10 9 8 7 6 0 50 Similar strength 4N wire AW-66 100 150 300 Pull Strength [grams - force] Bake Time in Air at 200 °C [hours] 200 250 400 500 11 10 9 8 7 6 0 100 Similar strength 4N wire AW-66 200 300 600 Pull Strength [grams - force] Bake Time in Air at 175 °C [hours] Recommended Technical Data of AW-66 Diameter Microns 15 16 17 18 19 20 23 25 28 30 33 Mils 0.9 1.0 1.1 1.2 1.3 AW-66X AW-66 Recommended Specs for Ball Bonding Elongation (%) 2 – 6 2 – 5 2 – 5 2 – 6 2 – 6 2 – 6 2 – 7 2 – 7 2 –7 2 – 7 3 – 7 Breaking Load (g) 3 – 6 3 – 7 4 – 7 4 – 8 5 – 9 5 – 10 7 – 12 9 – 14 11 – 16 13 – 20 15 – 23 In-Line Pad Pitch (μm)* Min. In-Line Pad Pitch 35 40 40 45 45 50 60 65 65 70 80 * Recommended pad pitch with corresponding wire diameter. For other diameters, please contact Heraeus Bonding Wires sales representative. Bonding Conditions: 23 μm wire diameter Capillary: 414FF-2455-R33 40 μm ball bond diameter
Transcript of Factsheet AW-66 - 4N Gold Ball Bonding Wire for High ...€¦ · AW-66 Characteristics for 25 µm...
AW-664N Gold Ball Bonding Wire for High Reliabilty
AW-66 BenefitsLong-term stability of ball bonds through robust intermetallic growthExcellent bondability on a wide range of wafer metallizationsLarge process windows for 1st and 2nd bondsVersatile looping capabilitiesApplicable for wire diameter reduction programs (cost reduuction)For ultra-fine-pitch applications –AW-66X with superior tolerances
40 µm diameter ball bond after 1000 hrs @ 175 °C, cross-section
AW-66 Thermal Aging Data
11
10
9
8
7
60 50
Similar strength 4N wireAW-66
100 150
4
300
Pull
Stre
ngth
[gra
ms
- for
ce]
Bake Time in Air at 200 °C [hours]
200 250
6
400 500
3
11
10
9
8
7
60 100
Similar strength 4N wireAW-66
200 300
2
600
Pull
Stre
ngth
[gra
ms
- for
ce]
Bake Time in Air at 175 °C [hours]
Recommended Technical Data of AW-66
Diameter Microns 15 16 17 18 19 20 23 25 28 30 33
Mils 0.9 1.0 1.1 1.2 1.3
AW-66X AW-66
Recommended Specs for Ball Bonding
Elongation (%) 2 – 6 2 – 5 2 – 5 2 – 6 2 – 6 2 – 6 2 – 7 2 – 7 2 –7 2 – 7 3 – 7
Breaking Load (g) 3 – 6 3 – 7 4 – 7 4 – 8 5 – 9 5 – 10 7 – 12 9 – 14 11 – 16 13 – 20 15 – 23
In-Line Pad Pitch (µm)*
Min. In-Line Pad Pitch 35 40 40 45 45 50 60 65 65 70 80
* Recommended pad pitch with corresponding wire diameter.
For other diameters, please contact Heraeus Bonding Wires sales representative.
Bonding Conditions:23 µm wire diameterCapillary: 414FF-2455-R3340 µm ball bond diameter
AW-66 Characteristics for 25 µm diameter
Non-Gold Elements < 100 ppm
Elastic Modulus � 80 GPa
Heat Affected Zone (HAZ) 50 – 170 µm
Neck Strength � 11 g (at 50 µm ball diameter)
Melting Point 1063 °C
Density 19.32 g/cm3
Heat Conductivity 3.17 W/cm.K
Electrical Resistivity 2.3 µ�-cm
Coeff. of Linear Expansion (20 – 100°C) 14.2 ppm/K
Fusing Current for 25 µm, dia 10 mm length (in air) 0.37 A
1st Bond Window on BOAC Die
20
18
16
14
12
1050
Current [mA]
Forc
e [g
ms]
60 6555 70
AW-66
SimilarStrength4N Wire
1st Bond Window on Conventional Die
16
14
12
10
8
645
Current [mA]
Forc
e [g
ms]
55 6050 65
AW-66
SimilarStrength4N Wire
2nd Bond Window
55
50
45
40
35
30
25
2075
Current [mA]
Forc
e [g
ms]
85 9080 100 105 11095
AW-66
SimilarStrength4N Wire
Bonding Conditions: 25 µm wire . BOAC die on BGA, T = 170°CBall diameter target 50 µm +/- 2 µm . Shear strength target> 6.0 g/mil^2 . IP coverage > 75% Squash height 10 +/- 2 µm
Bonding Conditions: Al 1%Si 0.5%Cu, 1 µm over SiO2 . 25 µmwire on BGA . T = 170°C . Ball diameter target 48 µm +/- 2 µmShearstrength target>0.6 g/mil^2 . IP coverage>75% . Squashheight 9 +/- 2 µm
Bonding Conditions: Capillary tip 3.4 mil, 25 µm wire on QFP,T = 200°C . Stitch pull target > 5 gram . No NSOL, opticallyacceptable crescent bond
Gold Wire Segmentation by Properties
Superior Reliability
Widest Bonding Highest LoopingWindow Performance
Superior Reliability
Widest Bonding Highest LoopingWindow Performance
Superior Reliability
Electrical Performance
Widest Bonding Highest LoopingWindow Performance
High
Average
Sensitive pad
structure
High Loop / Low Loop
Results m
ay vary with package and die configuration,
as well as bonding process
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The descriptions and engineering data shown here have been compiled by Heraeus using commonly-accepted procedures, in conjunction with modern testing equipment, and have been compiled as according to the latest factual knowledge in our possession. The information was up-to date on the date this document was printed (latest versions can always be supplied upon request). Although the data is considered accurate, we cannot guarantee accuracy, the results obtained from its use, or any patent infringement resulting from its use (unless this is contractually and explicitly agreed in writing, in advance). The data is supplied on the condition that the user shall conduct tests to determine materials suitability for particular application.
