Fabrication process validation for a double sided Silicon pixel detector. F. Quarati, S. Cadeddu, A....
-
Upload
cameron-howard -
Category
Documents
-
view
214 -
download
0
Transcript of Fabrication process validation for a double sided Silicon pixel detector. F. Quarati, S. Cadeddu, A....
![Page 1: Fabrication process validation for a double sided Silicon pixel detector. F. Quarati, S. Cadeddu, A. Lai A. Sesselego, M. Caria Physics Dep., University.](https://reader036.fdocuments.net/reader036/viewer/2022082712/56649e315503460f94b22a45/html5/thumbnails/1.jpg)
Fabrication process validation for a double sided Silicon pixel detector.
F. Quarati, S. Cadeddu, A. Lai
A. Sesselego, M. Caria
Physics Dep., University of Cagliari, ItalyPhysics and Astronomy Dep., University of
Glasgow, United Kingdom
![Page 2: Fabrication process validation for a double sided Silicon pixel detector. F. Quarati, S. Cadeddu, A. Lai A. Sesselego, M. Caria Physics Dep., University.](https://reader036.fdocuments.net/reader036/viewer/2022082712/56649e315503460f94b22a45/html5/thumbnails/2.jpg)
Detector features and measurements equipment
• High resistivity n-type silicon bulk wafer
• Boron implantation • 3 detector for each wafer • Detector area 2.8 x 3.8 cm2
• No. of pixes 16512 [IWORID 2001]
• Probe station K .Suss• Keithley 237 source meter• Keithley 2400 source meter• Keithley 590 CV analyzer• Deuterium lamp
Hamamatsu• Monochromator Y. Jobin
Processed at COLIBRISNeuchatel, Switzerland
![Page 3: Fabrication process validation for a double sided Silicon pixel detector. F. Quarati, S. Cadeddu, A. Lai A. Sesselego, M. Caria Physics Dep., University.](https://reader036.fdocuments.net/reader036/viewer/2022082712/56649e315503460f94b22a45/html5/thumbnails/3.jpg)
Characteristics of the standard detector:
responsivity
• The slope is regular after 5 V of bias
-20
-15
-10
-5
0
5
10
15
-1 4 9 14 19 24
bias [V]
Signal [nA]
dark
UV radiation
![Page 4: Fabrication process validation for a double sided Silicon pixel detector. F. Quarati, S. Cadeddu, A. Lai A. Sesselego, M. Caria Physics Dep., University.](https://reader036.fdocuments.net/reader036/viewer/2022082712/56649e315503460f94b22a45/html5/thumbnails/4.jpg)
Characteristics of the standard detector:depletion
• The depletion begin at low bias
0,5
0,6
0,7
0,8
0 5 10 15 20 25
bias [V]
capa
city
[pF
]
1cost V+
![Page 5: Fabrication process validation for a double sided Silicon pixel detector. F. Quarati, S. Cadeddu, A. Lai A. Sesselego, M. Caria Physics Dep., University.](https://reader036.fdocuments.net/reader036/viewer/2022082712/56649e315503460f94b22a45/html5/thumbnails/5.jpg)
Characteristics of the standard detector:
single pixel depletion
• The CV is reached biasing all the detector
0,05
0,1
0,15
0 5 10 15 20 25
bias [V]
capa
city
[pF
]
1cost V+
![Page 6: Fabrication process validation for a double sided Silicon pixel detector. F. Quarati, S. Cadeddu, A. Lai A. Sesselego, M. Caria Physics Dep., University.](https://reader036.fdocuments.net/reader036/viewer/2022082712/56649e315503460f94b22a45/html5/thumbnails/6.jpg)
Validation examples with collected signal (UV-dark)
• The graf. show the current value difference between UV - dark
4,5
5,5
6,5
7,5
8,5
0 5 10 15 20 25bias [V]
current [nA]
STD
bad
good
bad: swing
![Page 7: Fabrication process validation for a double sided Silicon pixel detector. F. Quarati, S. Cadeddu, A. Lai A. Sesselego, M. Caria Physics Dep., University.](https://reader036.fdocuments.net/reader036/viewer/2022082712/56649e315503460f94b22a45/html5/thumbnails/7.jpg)
Complete validation with CV charac.
• The CV comparison provide that the deplation condition is also well satisfy
0,5
0,6
0,7
0,8
0 5 10 15 20 25
bias [V]
capa
city
[pF
] STD detector &previous good detector
![Page 8: Fabrication process validation for a double sided Silicon pixel detector. F. Quarati, S. Cadeddu, A. Lai A. Sesselego, M. Caria Physics Dep., University.](https://reader036.fdocuments.net/reader036/viewer/2022082712/56649e315503460f94b22a45/html5/thumbnails/8.jpg)
The validation of the production process
• 24 wafer or 72 detector are been processed
• 1 wafer present C.C. for all the 3 detector
2 wafer present high noise for all 3 detector
That is 13%• 8 detector present high
noise That is 11%• 3 detector present
swing That is 4%• 21 wafer and 52
efficient detectors
72%
11%
4%
13%
detector pie
![Page 9: Fabrication process validation for a double sided Silicon pixel detector. F. Quarati, S. Cadeddu, A. Lai A. Sesselego, M. Caria Physics Dep., University.](https://reader036.fdocuments.net/reader036/viewer/2022082712/56649e315503460f94b22a45/html5/thumbnails/9.jpg)
Further work
• Fit with the exponential addition is better
0,5
0,6
0,7
0,8
0 5 10 15 20 25bias [V]
capacity [pF]
2 0.0003c =
2 0.0005c =
2
1
cost1cost
VeV
-µ +
+
![Page 10: Fabrication process validation for a double sided Silicon pixel detector. F. Quarati, S. Cadeddu, A. Lai A. Sesselego, M. Caria Physics Dep., University.](https://reader036.fdocuments.net/reader036/viewer/2022082712/56649e315503460f94b22a45/html5/thumbnails/10.jpg)
![Page 11: Fabrication process validation for a double sided Silicon pixel detector. F. Quarati, S. Cadeddu, A. Lai A. Sesselego, M. Caria Physics Dep., University.](https://reader036.fdocuments.net/reader036/viewer/2022082712/56649e315503460f94b22a45/html5/thumbnails/11.jpg)