Evaluation Technology of Practical Electric Properties … · Evaluation Technology of Practical...

Evaluation Technology of Practical ElectricProperties for High Frequency Materials

Nov. 16th, 2011

Tsukuba Research LaboratoryTelecommunication Materials Development CenterPrinted Wiring Board Materials R&D Dept.Printed Wiring Board Materials Business Sector

Yusuke Kondo, Hikari MuraiTetsuro Irino, Hiroshi Shimizu

© Hitachi Chemical Co., Ltd. 2011. All rights reserved. 2

Freq

uenc

y ba

nd

Backplane

＞10 Gbps(Optical/Electronic Interconnection?)

PCI(33 Mbps/ch, Parallel)

PCI-Express(2.5 Gbps/ch, Serial)

PCI-Ex.-H

(5 Gbps/ch, Serial)

HighHigh--speed digitalspeed digital(Server, Router,(Server, Router,HPC, etc) / HighHPC, etc) / High--

layerlayer

TACS/PDC:1G(800 MHz)

PDC:2G(1.5 GHz)

W-CDMA:3G(2 GHz)

ACC(24/60/76~79 GHz)

HSPA: 3.5G(2 GHz)

IMT-Advanced:4G(3~5 GHz?)

VICS (2.45 GHz)

GPS (1.5 GHz)

AHS (5.8 GHz)

ETC(5.8 GHz)

ITSMobile

3.9G:LTE(1.5 GHz)

RF/Wireless RF/Wireless （（Mobile, ITS, Mobile, ITS, WirelessWireless--LAN/Access, etcLAN/Access, etc））

Tran

smis

sion

spe

edCPU

Pentium IV(1.4~2.5 GHz)

Pentium III(0.45~1.3 GHz)

Pentium II(233~450 MHz)

Pentium(66~233 MHz)

Pentium IV/D(3.6 GHz)

Core2 Duo(2.66 GHz)

1990 2000 2010

Trend of high-Speed & high-frequency applications


Parallel Plate Capacitance

Whispering-Gallery Mode

SPPStrip Line Resonator

Cavity Resonator PerturbationDk/Df

10-3 10 20 30 40 50 1001Frequency [GHz]

Dielectric properties of materials

Practical electrical properties of PCB

Under planning

Under planning

Strip LineMicrostrip Line

Dk/Df, Attenuation

Transmissionloss (=ATT)+Environmental

test

Split Post Dielectric Resonator

10-3 10 20 30 40 50 1001Frequency [GHz]

Hitachi Chemical can satisfy various evaluation requirements

Hitachi Chemical's evaluation technology


Sampleform

Freq.

MethodSplit PostDielectric

ResonatorStrip LineResonator

Standard

1 ~ 20 GHz 1 ~ 30 GHz

・w/o conductor・Sheet / board・Thickness: ~ 0.5 mm

・Width: 10 ~ 130 mm

・Strip line・Thickness：≧1.0mm

・Characteristicimpedance:50 Ω

WG modedielectric resonator

50 ~ 100 GHz

・w/o conductor・Disk・Thickness: ~ 2 mm

・Diameter: 30 ~ 60 mm

IPC-TM-650 2.5.5.5.1JPCA-TM001-2007

CavityResonator

Perturbation

1 ~ 20 GHz

・w/o conductor・Stick・Thickness: ~ 1 mm

・Width: 1~2 mm・Length: 80 mm

JIS C-2565

Subject Material PCB

Under planning

・Various methods exist to evaluate dielectric properties of materials and PCBs.・Usable frequency band and sample form are different.

Evaluation methods of dielectric properties


Glass clothResin

・PCB materials have anisotropy because of difference of Dk betweenresin and glass cloth.

・Suitable methods are utilized to evaluate anisotropic dielectricproperties and practical electric properties of materials depending on frequency band and application of materials.

Electric field

Strip Line ResonatorSplit Post Dielectric Resonator

Electric field (occur on surface)

Glass clothResin

Trace

Anisotropy of PCB materials


Vector Network Analyzer

Ground

Ground

SignalLine

Dielectric Material

Conductor (Copper)

Dielectric Material

Pile up

S 21

(dB

)

Frequency (GHz)

=>Periodic resonance frequencies DkTransmission curve, S21

CalculationAttenuation, DfCalculation

(Original conversion method)

IN OUT

SMA Connector

=>=> =>

Fixture

Sample

・Frequency domain method・Capable of measuring properties of thermal drift and moistureabsorption drift

Strip Line Resonator


< Measurement conditions >/ Method: Strip Line Resonator by Vector Network Analyzer/JPCA TM001/IPC-TM-650_2.5.5.5.1/ Temperature & humidity: 25 oC/ 60 %RH/ Laminate thickness: 0.8 mm (signal-ground distance: 0.8 mm), copper foil:18 μm/ Line width: 1 mm

2.5

3.0

3.5

4.0

4.5

0 2 4 6 8 10Frequency (GHz)

Dk

Conventional FR-4

FX-2

PTFE/E-glass

0

0.005

0.010

0.015

0.020

0.025

0 2 4 6 8 10

Frequency (GHz)

Df

Conventional FR-4

FX-2

PTFE/E-glass

Good stability of dielectric properties in wide frequency bands

Dielectric properties (vs. frequency)


0

0.005

0.010

0.015

0.020

0.025

0.030

0 1 2 3 4 5

PCT-Treating Time (h)

Df (

1 G

Hz)

3.03.23.43.63.84.04.24.44.64.85.0

0 1 2 3 4 5

PCT-Treating Time (h)

Dk

(1 G

Hz)

Conventional FR-4

FX-2

Conventional FR-4

FX-2

Stable Dk & Df against PCT treatment compared with FR-4

< Measurement conditions >/ Method: Strip Line Resonator by Vector Network Analyzer/JPCA TM001/IPC-TM-650 2.5.5.5.1/ Moisture treatment condition: PCT(121oC/0.22 MPa)-1~5 h/ Temperature : 25 oC/ Laminate thickness: 1.6 mm (signal-ground distance: 0.8 mm), copper foil:18 μm/ Line width: 1 mm

Dielectric properties (vs. moisture absorption)


0

0.005

0.010

0.015

0.020

0.025

0.030

-40 -20 0 20 40 60 80 100

Temperature ()

Df (

1 G

Hz)

3.0

3.2

3.4

3.6

3.8

4.0

4.2

4.4

-40 -20 0 20 40 60 80 100

Temperature ()

Dk

(1 G

Hz)

FX-2

Conventional FR-4 Conventional FR-4

FX-2

Good stability of dielectric properties against temperature

< Measurement conditions >/ Method: Strip Line Resonator by Vector Network Analyzer/JPCA TM001/IPC-TM-650 2.5.5.5.1/ Temperature: -30~90oC/ Laminate thickness: 1.6 mm (signal-ground distance: 0.8 mm), copper foil:18 μm/ Line width: 1 mm

Dielectric properties (vs. temperature)


FX-2 HE-679GResin rich,

PFResin poor,

LPResin rich,

RTFResin poor,

LP3.48 3.673.473.453.44

0.00540.00580.00620.0074

3.633.593.56

0.01480.01610.01650.0169

3.12 3.953 GHz 3.11 3.92

3.883.86

0.01150.01240.01250.0134

10 GHz 3.09

3 GHz 0.005310 GHz 0.005320 GHz 0.0064

20 GHz 3.090.0050

Category Frequency

1 GHz

Dk

1 GHz

Df

・Hitachi Chemical is certificated as an evaluator of SPP・SPP assessment is useful to accelerate R&D of materialsbecause we can know performance of materials including influence of copper foils

Test vehicle / SMASPP2z

SPP


Sampledisk

Dielectricwaveguides

Waveabsorber

VNA

Multiplier

HornAntenna

Waveguide tocoax transitions

Coaxialcables

Multiplier

Material Dk DfHE- 679G 4.16 0.0096LZ- 71G 3.68 0.0069

0.00390.01010.0078

FX- 2 3.52E- 700G(R) 4.61

3.91E- 800G(L)

Measurement system Resonance wave form

Dielectric properties (@60 GHz)

-50

-40

-30

-20

-10

0

50 55 60 65 70 75Freqency [GHz]

S21

[dB

]

Dielectric properties can be measured in millimeter wave band

Whispering- Gallery Mode Dielectric Resonator


Test board (up to 40 GHz)Test board (up to 20 GHz)

Connector

Coaxial cable

Test board

VNA

Probe station

VNA

Test board

Measurement of Strip line

Evaluation of PCB (SL)


180~200 μmCu：18 μm

100 μm100 μm

GNDSignal

GND

4 layers

ProbesTerminals

-4.0

-3.0

-2.0

-1.0

0.0

0 10 20 30 40Frequency(GHz)

Tran

smis

sion

loss

(dB/

cm)

Capable of evaluating strip line up to approximately 40 GHz

<Measurement condition>/ Structure: strip line/ Equipment: VNA/ Calibration：TRL

Connectoravailable Probe

available

Transmission loss of Strip line


Evaluation system for semi-microwave ~ milliwave properties

VNA

Probe station

Cross section of TEG

TEG PWB for evaluation (microstrip line structure)

S21

S11

Pattern for S11Measurement terminal

Pattern for S21

Evaluation of PCB (MSL)


Transmission loss (1～90GHz, S21@MSL)

＜ Measurement conditions ＞/ Structure: microstrip line/ Temperature & humidity:

25/40%RH/ Characteristic impedance: 50 Ω/ Calibration: TRL/ Dimension parameters･Line width(w): 0.2～0.22 mm･Dielectric thickness(b):

0.1～0.13 mm･Copper thickness(t): 18 μm･Line length: 10 mm & 20 mm ･Surface treatment of copper:

Ni(4 μm)/Au(0.5 μm) plating

wbt

Copper foil (15 μm)+Ni(4 μm) / Au(0.5 μm)

-1.8

-1.6

-1.4

-1.2

-1.0

-0.8

-0.6

-0.4

-0.2

00 10 20 30 40 50 60 70 8

Frequency (GHz)

Tran

smis

sion

loss

(dB

/cm

0 90

)

FX-2

Material R1 (Hydrocarbon/Ceramic)

Transmission properties


-7

-6

-5

-4

-3

-2

-1

0

-50 0 50 100 150Temperature ()

Tran

smis

sion

loss

(dB

/cm

@76

GH

z)

FX-2LZ-71GHE-679GE-67

-6

-5

-4

-3

-2

-1

0

0 10 20 30 40 50 60 70 80 90Frequency (GHz)

Tran

smis

sion

loss

(dB

/cm

)

-300256090120

<Measurement condition>/ Structure: microstrip line/ Equipment: VNA/ Calibration：SOLT

E-67（FR-4）

High frequency materials have good stability of transmission loss against temperature

100 μm

180~200 μm

Transmission loss (vs. temperature)


-0.02

0.00

0.02

0.04

0.06

0.08

0.10

0 500 1000 1500Processing time （hr)

⊿D

keff

（ca

lcul

ated

from

⊿ph

ase）

Influence of heat-processing

LZ-71G

Drift of Effective Dk can be evaluated in millimeter wave band

@76.5 GHz125oC / 1500hr

-180

-120

-60

0

60

120

180

0 20 40 60 80Frequency (GHz)

phas

e（ o ）

π

2/3π1/3π

-1/3π

-2/3π

-π

Pha

se (r

ad)

wbt

Copper foil (15 μm)+Ni(4 μm) / Au(0.5 μm)Effective Dk

Phase (vs. frequency)Drift

Effective Dk can be calculated from phase

･Line width(w): 0.2～0.22 mm･Dielectric thickness(b):

0.1～0.13 mm･Copper thickness(t): 18 μm･Line length: 10 mm & 20 mm ･Surface treatment of copper:

Ni(4 μm)/Au(0.5 μm) plating

Drift property of effective Dk (MSL)


-2.4

-2.0

-1.6

-1.2

-0.8

-0.4

0

0 200 400 600 800 1000 1200Processing time （hr/C-85/85）

Tran

smis

sion

loss

（dB

/cm＠

76.5

GH

z）

Influence of humidity absorption

FX-2

FX-2

-40

-35

-30

-25

-20

-15

-10

-5

0

70 72 74 76 78 80Frequency（GHz）

S11（dB

）

InitialDrift

-0.100

-0.050

0.00

0.05

0.10

0.15

0.20

0 200 400 600 800 1000 1200Processing time （hr/C-85/85）

⊿D

k（C

alcu

late

d fro

m ⊿

f）

Drift property of transmission loss and Dk (MSL)


・3D EM field solver (Ansys HFSS)・Circuit simulator (Agilent ADS)

/ Designing of measurement terminals for evaluation of transmission properties to W-band, 100 GHz

/ Guessing of electrical performance, combination of structures, and themost suitable materials

/ Guessing of dielectric drift properties, ⊿Dk, by fitting calculated resonance properties, S11, to measured S11

MSL SL

Measurementterminal

Resonance pattern

Simulation technology


Reliability of FX-2 (update)


Layer count : 24 layers PCB thickness : 3.1 mmTest temp.: 150oC +/- 3oC in 3 minutesCriteria of failure: more than 10% change of resistance

Drill hole size Pre-conditioning Cycles

0.010” AS IS > 1,000

4X (260oC) > 1,000

6X (260oC) > 1,000

0.0135” AS IS > 1,000

4X (260oC) > 1,000

6X (260oC) > 1,000n = 6pnl

Good through-hole connection reliability

IST result after Pb-free


/ Total thickness: 4.1 mm (28 layer board)/ Wall-Wall Spacing: 0.40 mm,0.50 mm, about 2,000holes/ Precondition: 85oC/85%RH/120 h + Reflow 260oC X 10 times/ Measurement condition: 85oC/85%RH DC100 V/ The measurement of insulation resistance in chamber

Hitachi Chemical original pattern

CAF evaluation of high layer count board


Measurement condition: 85oC/85%RH DC100V, The measurement of insulation resistance in chamber

1.0E+001.0E+021.0E+041.0E+061.0E+081.0E+101.0E+12

0 100 200 300 400 500 600Treating time (h)

Insu

latio

n re

sist

ance

(Ω

)

1.0E+001.0E+021.0E+041.0E+061.0E+081.0E+101.0E+12

0 100 200 300 400 500 600Treating time (h)

Insu

latio

n re

sist

ance

(Ω

)

Wall-Wall Spacing:0.5 mm

Wall-Wall Spacing:0.4 mm

Good CAF restraining property

Results of CAF evaluation


<Measurement condition>/ Structure: Strip line/ Equipment: VNA/ Calibration：TRL 100 μm

100 μm

Line width:180~200 μmCu thickness：18 μm

Equal to conventional FX-2

-1.0

-0.8

-0.6

-0.4

-0.2

0.0

0 5 10 15 20Frequency (GHz)

Tran

smis

sion

loss

(dB/

cm)

ModifiedConventional

Transmission loss of modified FX-2


High-end RouterHigh-end ServerTransportSuper computerIC testerMeasuring equipmentBTS (Sgnl.-Pros.)

Transmission rate/Link(Backplane)

High-enddigital(High-speed& High-layer) LX-67/LX-67Y

Dk:3.5/Df:0.005LZ-71G

Dk:3.6/Df:0.006

Middle～Low digital(High-speed& High-layer)

E-67/E-679Dk:>4.0/Df:>0.02

FX-2/FX-3Dk:3.2-3.5/

Df:0.0025-0.0028

Applications

Mobile devicesLow～Middle

Router/ServerBTS (Sgnl.-Pros.)

RF/Wireless(Analog high-Freq.)

AntennaSensorRF-ModuleBase stationMobile devicesSatellite

HD-67Dk:10.2/Df:0.009

LX-67FDk:3.7/Df:0.003

(Mobile)

BE-67G(H)Dk:4.5/Df:0.01

HE-679GDk:4.0/Df:0.009

1.25~2.5 Gbps 3.2~6.4 Gbps ~10 Gbps >10 Gbps300 Mbps~1 Gbps

9.6~144 kbps<2.4 kbps 2 Mbps 3.8 Mbps

Opt ?Opt ?

HE-679G(K)Dk:3.7/Df:0.007

FX-2/FX-3Dk:3.2-3.5/

Df:0.0025-0.0028

E-679FJDk:4.3/Df:0.018

Dk<3.8/Df<0.005 Dk<3.7Df<0.003

New New MaterialMaterial

oror

Dk<4.5/Df<0.025 Dk<4.5/Df<0.018 Dk<4.0/Df<0.01

Df<0.01 Df<0.005 Dk<3.5Df<0.003

FX-4Dk:3.2/

Df:0.0025

~2000 2002 2004 2006 2008 2010 2012 2014

Dk<3.5Df<0.002

Dk<3.2Df<0.002

Dk<3.8Df<0.007

High-Freq.-PKG

Mobile devicesRF-ModuleMMIC-PKGOEIC-PKG

Df<0.015 Df<0.01 Df<0.005

E-679FGDk:4.5/Df:0.014

LZ-71GDk:3.6/Df:0.006

E-800G,FalconDk:4.0/Df:0.005

Dk&Df:@1GHz

ASAS--Z5(BU)Z5(BU)Dk:3.1

/Df:0.004

5.7 Mbps 7.2 Mbps >10 Mbps

Road map of Hitachi high frequency PWB materials


1. Hitachi Chemical has various evaluation technology ofdielectric properties and practical electrical properties.

2. Hitachi Chemical intend to accelerate R&D of materials for nextgeneration through these technology and newly constructedtechnology.

3. We also would like to propose the combination of the mostsuitable materials depending on PCB structure and applications by using evaluation technology and simulation.

Summary

Evaluation Technology of Practical Electric Properties … · Evaluation Technology of Practical...

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Transcript of Evaluation Technology of Practical Electric Properties … · Evaluation Technology of Practical...