Evaluation board Manual MB39A112 - Fujitsu · Evaluation board Manual ... - - MCPH3 SANYO ... 20 C7...

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1/24Power Management

MB39A112 Evaluation Board Rev1.0E

Rev 1.0EApril,2003

Evaluation board ManualEvaluation board Manual

MB39A112MB39A112




1. 1. Evaluation Board SpecificationsEvaluation Board SpecificationsThe MB39A112 evaluation board is a surface mounting circuit board of the down conversion circuit of 3ch.1.2V, 3.3V, and 5V are output from the output terminal in three forms, and the current of 1.5A or less is supplied.Moreover, FET is turned off when the under voltage lockout protection circuit do operation or the short-circuit protection is detected by the protection function, and the output is stopped.In addition, the on/off control and the soft-start of each channel can be set.

2. 2. Evaluation Board SpecificationsEvaluation Board SpecificationsTerminal MIN TYP MAX Unit

VIN 7 12 20 V2115 2350 2585 kHz

CH1 VO1 1.14 1.2 1.26 VCH2 VO2 3.13 3.3 3.47 VCH3 VO3 4.75 5 5.25 VCH1 VO1 6 12 24 mVCH2 VO2 16 33 64 mVCH3 VO3 25 50 100 mVCH1 VO1 800 1200 1500 mACH2 VO2 150 500 1000 mACH3 VO3 150 200 300 mACH1 - 6.3 10 18.6 msCH2 - 7.8 12 22.8 msCH3 - 7.8 12 22.8 ms

- 430 720 1420 µs

ItemInput voltage

Oscillation frequency

Short-circuit detection time

Output voltage

Ripple voltage

Output current

Soft-start time




3. 3. Pin DescriptionsPin Descriptions

MB39A112 GND terminalICGND

GND terminalGND

DC/DC converter output terminalVoXInput terminalVIN

DESCRIPTIONSPIN name

DC/DC converter GND terminalGNDX

4. 4. SwSw InformationInformation

Output OFF

L

Output ON

OPEN

CH1control

Function

CS22

CS11

NameSW

CS33

CH2 control

CH3 control

Output ON

Output ON

Output OFF

Output OFF

(1) Setup• Connect the power-supply terminal side to VIN and GND. Connect the Vo

side to the required loading device or measuring instrument.• Set SW1 through SW4 (CS1 to CS3) to OFF (output off).

(2) Checkup• Turn on VIN (power supply), set SW1 to SW3 to ON (output on).

The IC works normally with the following outputs:Vo1 = 1.2 V (Typ) , Vo2 = 3.3 V (Typ) , Vo3 = 5 V (Typ)

5.5. Setup & Confirmation MethodSetup & Confirmation Method




6. 6. Parts Layout BlockParts Layout Block

Board parts block diagram




Board Layout

Top Side

Bottom Side

Inside GND(Layer 2)

Inside VIN(Layer 3)




7. 7. Circuit DiagramCircuit Diagram

-INE2

OUT2

Vo2(3.3V)Io2=0.15A to 1A

VIN(12V)

OSC

2.5V

2.0V

SCP

PowerON/OFF

CTLVR

ErrorAmp reference1.0V/1.23V

VREF

VCC

bias 3.5V

GND

ErrorAmp power supplySCPComp. power supplyCharge current

1µA

9B

10

8

CS2

FB2

18

B

CH2 ON/OFF signal(L:ON,H:OFF)

-INE3

OUT3

12C

11

13

CS3

FB3

17


2.7V

4

7

SCPComp.

14CSCP

RT5

H: at SCP

H:UVLO release

CTL3

CTL2

Drive3

ErrorAmp3

1.23V

PWMComp.3

<<CH3>>VREF

10µA

UVLO

-INE1 VCCO

OUT1

Vo1(1.2V)Io1=0.8A to1.5A

2A

1

3

CS1

FB1

20

19

A


Step down

CTL1

Drive1

ErrorAmp1

1.0V

PWMComp.1

<<CH1>>

Pch

VREF

10µA

L priority

Io=150mA

Drive2

ErrorAmp2

1.23V

PWMComp.2

<<CH2>>

Pch

VREF

10µA

<< 20Pin >>

Io=150mA

Pch

Io=150mA

Vo3(5.0V)Io1=0.15A to 0.3A

C

BiasVoltage

VH

VH16

GNDO15

VCCO-5V

H priority

GND

CT6

LSW1

OPEN

All channels are ON state in above diagram.

12

34

a

b

c

CS1

CS2

CS3

NC

a

b

c

GND1

GND2

GND3

VD1

VD2

VD3

Q1MCH3312 L1

2uHC24.7uFD1

SBE001R1

0ΩC12.2uF

Q2MCH3312 L2

3.3uHC44.7uFD2

SBE001R2

0ΩC32.2uF

Q3MCH3308 L3

10uHC64.7uFD3

SBS005R3

0ΩC52.2uF

R4

0Ω

R5

0Ω

C170.1uF

C90.1uF

R62.2kΩ

R718kΩ

R8100kΩ

R19*

C70.1uF

R9820Ω

C80.022uF

Q4*

R114.7kΩ

R1256kΩ

R1336kΩ

R20*

C120.1uF

R14820Ω

C110.01uF

Q5*

R15680Ω

R1630kΩ

R1710kΩ

R21*

C130.1uF

R181kΩ

C140.01uF

Q6*

C151000pF

C10100pF

R105.1kΩ

*:Not mounting ICGND

GNDC16

0.1uF

L priority

L priority

Step down

Step down




8. 8. Circuit Parts ListCircuit Parts List

(Continued)

Component(Circuit diagram mark) Rated1 Rated2 Rated3 Value Deviation Characteristic

1 M1 IC MB39A112PFT - - - - - - FPT-20P-M06 FUJITSU2 Q1 Pch FET MCH3312 PD=1W VGSS=20V ID=2.0A - - - MCPH3 SANYO3 Q2 Pch FET MCH3312 PD=1W VGSS=20V ID=2.0A - - - MCPH3 SANYO4 Q3 Pch FET MCH3308 PD=0.8W VGSS=20V ID=1.0A - - - MCPH3 SANYO5 Q4 Nch FET - - - - - - - - - Not mounting

6 Q5 Nch FET - - - - - - - - - Not mounting

7 Q6 Nch FET - - - - - - - - - Not mounting

8 D1 SBD SBE001 IF(AV)=2A VRRM=30V - - - - CPH6 SANYO9 D2 SBD SBE001 IF(AV)=2A VRRM=30V - - - - CPH6 SANYO10 D3 SBD SBS005 IF(AV)=1A VRRM=30V - - - - CPH3 SANYO11 L1 Inductor A916CY-2R0M IDC1=3A IDC2=3.31A - 2u ±20% RDC=16mΩ - TOKO12 L2 Inductor A916CY-3R3M IDC1=2.57A IDC2=2.81A - 3.3u ±20% RDC=21.4mΩ - TOKO13 L3 Inductor A916CY-100M IDC1=1.49A IDC2=1.97A - 10u ±20% RDC=41.2mΩ - TOKO14 C1 Ceramic condenser C3216JB1E225K 25V - - 2.2u ±10% B characteristic 3216 TDK15 C2 Ceramic condenser C3216JB1A475M 10V - - 4.7u ±20% B characteristic 3216 TDK16 C3 Ceramic condenser C3216JB1E225K 25V - - 2.2u ±10% B characteristic 3216 TDK17 C4 Ceramic condenser C3216JB1A475M 10V - - 4.7u ±20% B characteristic 3216 TDK18 C5 Ceramic condenser C3216JB1E225K 25V - - 2.2u ±10% B characteristic 3216 TDK19 C6 Ceramic condenser C3216JB1A475M 10V - - 4.7u ±20% B characteristic 3216 TDK20 C7 Ceramic condenser C1608JB1H104K 50V - - 0.1u ±10% B characteristic 1608 TDK21 C8 Ceramic condenser C1608JB1H223K 50V - - 0.022u ±10% B characteristic 1608 TDK22 C9 Ceramic condenser C1608JB1H104K 50V - - 0.1u ±10% B characteristic 1608 TDK23 C10 Ceramic condenser C1608CH1H101J 50V - - 100p ±5% CH characteristic 1608 TDK24 C11 Ceramic condenser C1608JB1H103K 50V - - 0.01u ±10% B characteristic 1608 TDK25 C12 Ceramic condenser C1608JB1H104K 50V - - 0.1u ±10% B characteristic 1608 TDK26 C13 Ceramic condenser C1608JB1H104K 50V - - 0.1u ±10% B characteristic 1608 TDK27 C14 Ceramic condenser C1608JB1H103K 50V - - 0.01u ±10% B characteristic 1608 TDK28 C15 Ceramic condenser C1608JB1H102K 50V - - 1000p ±10% B characteristic 1608 TDK29 C16 Ceramic condenser C1608JB1H104K 50V - - 0.1u ±10% B characteristic 1608 TDK30 C17 Ceramic condenser C1608JB1H104K 50V - - 0.1u ±10% B characteristic 1608 TDK

Part name RemarkNo. Item VendorPackageSpecification




(Continued)Component

(Circuit diagram mark) Rated1 Rated2 Rated3 Value Deviation Characteristic

31 R1 Jumper RK73Z1J 1A - - 0 Ω max 50mΩ - 1608 KOA32 R2 Jumper RK73Z1J 1A - - 0 Ω max 50mΩ - 1608 KOA33 R3 Jumper RK73Z1J 1A - - 0 Ω max 50mΩ - 1608 KOA34 R4 Jumper RK73Z1J 1A - - 0 Ω max 50mΩ - 1608 KOA35 R5 Jumper RK73Z1J 1A - - 0 Ω max 50mΩ - 1608 KOA36 R6 Resistor PR0816P-222-D 1/16W - - 2.2kΩ ±0.5% ±25ppm/°C 1608 ssm37 R7 Resistor PR0816P-183-D 1/16W - - 18kΩ ±0.5% ±25ppm/°C 1608 ssm38 R8 Resistor PR0816P-104-D 1/16W - - 100kΩ ±0.5% ±25ppm/°C 1608 ssm39 R9 Resistor PR0816P-821-D 1/16W - - 820Ω ±0.5% ±25ppm/°C 1608 ssm40 R10 Resistor PR0816P-512-D 1/16W - - 5.1kΩ ±0.5% ±25ppm/°C 1608 ssm41 R11 Resistor PR0816P-472-D 1/16W - - 4.7kΩ ±0.5% ±25ppm/°C 1608 ssm42 R12 Resistor PR0816P-563-D 1/16W - - 56kΩ ±0.5% ±25ppm/°C 1608 ssm43 R13 Resistor PR0816P-363-D 1/16W - - 36kΩ ±0.5% ±25ppm/°C 1608 ssm44 R14 Resistor PR0816P-821-D 1/16W - - 820Ω ±0.5% ±25ppm/°C 1608 ssm45 R15 Resistor PR0816P-681-D 1/16W - - 680Ω ±0.5% ±25ppm/°C 1608 ssm46 R16 Resistor PR0816P-303-D 1/16W - - 30kΩ ±0.5% ±25ppm/°C 1608 ssm47 R17 Resistor PR0816P-103-D 1/16W - - 10kΩ ±0.5% ±25ppm/°C 1608 ssm48 R18 Resistor PR0816P-102-D 1/16W - - 1kΩ ±0.5% ±25ppm/°C 1608 ssm49 R19 Resistor - - - - - - - - - Not mounting

50 R20 Resistor - - - - - - - - - Not mounting

51 R21 Resistor - - - - - - - - - Not mounting

52 SW1 DIP SWITCH DMS-4H - - - - - - - MATSUKYU

53 PIN Wiring terminal WT-2-1 - - - - - - - Mac-Eight

SpecificationPackage Vendor RemarkNo. Item Part nmae




(1) Output voltage

CH1: Vo1(V) = × 1.0 ≅ 1.2V

CH2: Vo2(V) = × 1.23 ≅ 3.3V

CH3: Vo3(V) = × 1.23 ≅ 5V

(2) Triangular wave oscillation frequency

fosc(kHz) = ≅ 2350(kHz)

(3) Soft-Start Time CH1: ts1(s) = 0.1 × C7(µF) ≅ 10(ms) CH2: ts2(s) = 0.123 × C12(µF) ≅ 12(ms) CH3: ts3(s) = 0.123 × C13(µF) ≅ 12(ms)

(4) Short-Circuit Detection Time tscp(s) = 0.72 × C15(µF) ≅ 720(µs)

9. 9. InitializationInitialization

R13R11+R12+R13

R17R15+R16+R17

R8R6+R7+R8

C10(pF) × R10(kΩ)1200000




10. 10. Reference DataReference Data(1)Conversion efficiency

Conversion efficiency-Load current (ch1)Conversion efficiency-Load current (ch1)Conversion efficiency-Load current (ch1)Conversion efficiency-Load current (ch1)

20202020

30303030

40404040

50505050

60606060

70707070

80808080

90909090

100100100100

10101010 100100100100 1000100010001000 10000100001000010000

Load current Io1(mA)Load current Io1(mA)Load current Io1(mA)Load current Io1(mA)

Convers

ion e

ffic

iencyη

(%)

Convers

ion e

ffic

iencyη

(%)

Convers

ion e

ffic

iencyη

(%)

Convers

ion e

ffic

iencyη

(%)

VIN=12VSetting Vo1=1.2VSW1=ONSW2=OFFSW3=OFF


20202020

30303030

40404040

50505050

60606060

70707070

80808080

90909090

100100100100

10101010 100100100100 1000100010001000 10000100001000010000


Convers

ion e

ffic

iencyη

(%)

Convers

ion e

ffic

iencyη

(%)

Convers

ion e

ffic

iencyη

(%)

Convers

ion e

ffic

iencyη

(%)

VIN=12VSetting Vo2=3.3VSW1=OFFSW2=ONSW3=OFF


20202020

30303030

40404040

50505050

60606060

70707070

80808080

90909090

100100100100

10101010 100100100100 1000100010001000


Convers

ion e

ffic

iencyη

(%)

Convers

ion e

ffic

iencyη

(%)

Convers

ion e

ffic

iencyη

(%)

Convers

ion e

ffic

iencyη

(%)

VIN=12VSetting Vo3=5.0VSW1=OFFSW2=OFFSW3=ON

ch1ch1 ch2ch2

ch3ch3




ch1ch1 ch2ch2

ch3ch3Output voltgae-Load current(ch3)Output voltgae-Load current(ch3)Output voltgae-Load current(ch3)Output voltgae-Load current(ch3)

4.84.84.84.8

4.94.94.94.9

5555

5.15.15.15.1

5.25.25.25.2

5.35.35.35.3

10101010 100100100100 1000100010001000

Load current Io3(A)Load current Io3(A)Load current Io3(A)Load current Io3(A)

Outp

ut

volt

gae V

o3(V

)O

utp

ut

volt

gae V

o3(V

)O

utp

ut

volt

gae V

o3(V

)O

utp

ut

volt

gae V

o3(V

)


(2) (2) Load regulation (VLoad regulation (VININ=12V)=12V)

Output voltgae-Load current(ch3)Output voltgae-Load current(ch3)Output voltgae-Load current(ch3)Output voltgae-Load current(ch3)

4.84.84.84.8

4.94.94.94.9

5555

5.15.15.15.1

5.25.25.25.2

5.35.35.35.3

10101010 100100100100 1000100010001000


Outp

ut

volt

gae V

o3(V

)O

utp

ut

volt

gae V

o3(V

)O

utp

ut

volt

gae V

o3(V

)O

utp

ut

volt

gae V

o3(V

)


Output voltgae-Load current(ch2)Output voltgae-Load current(ch2)Output voltgae-Load current(ch2)Output voltgae-Load current(ch2)

3333

3.13.13.13.1

3.23.23.23.2

3.33.33.33.3

3.43.43.43.4

3.53.53.53.5

10101010 100100100100 1000100010001000 10000100001000010000


Outp

ut

volt

gae V

o2(V

)O

utp

ut

volt

gae V

o2(V

)O

utp

ut

volt

gae V

o2(V

)O

utp

ut

volt

gae V

o2(V

)

VIN=12VSetting Vo2=3.3VSW1=OFFSW2=ONSW3=OFF




ch1ch1 ch2ch2

ch3ch3

(3) (3) Line regulation Line regulation

Output voltage-Input voltage(ch1)

1

1.1

1.2

1.3

1.4

1.5

6 8 10 12 14 16 18 20 22Input voltage VIN(V)

Out

put v

olta

ge V

o1(V

)


3

3.1

3.2

3.3

3.4

3.5


Out

put v

olta

ge V

o2(V

)


4.8

4.9

5

5.1

5.2

5.3


Out

put v

olta

ge V

o3(V

)




ch1ch1 ch2ch2

ch3ch3

(4) Soft-start operation waveform

1

0

CS1[V]2

0.50

Vo1[V]

1.0

10.6ms

1.5

2.0

3

0 5 10 15 20 25 30 35 40 45 50 (ms)

VIN=12VSetting Vo1=1.2V 1

0

CS2[V]2

10

Vo2[V]

2

3

4

12.7ms

3

0 5 10 15 20 25 30 35 40 45 50 (ms)

VIN=12VSetting Vo2=3.3V

1

0

CS3[V]2

20

Vo3[V]

4

6

13.2ms

3

VIN=12VSetting Vo3=5.0V

0 5 10 15 20 25 30 35 40 45 50 (ms)




Board Photograph

11. 11. Parts Select MethodParts Select Method

FET

CH2

CH1

CH3

FET

FET

Flyback Diode

Flyback Diode

Flyback DiodeOutput Smoothing Condenser

Output Smoothing Condenser

Output Smoothing Condenser

Inductor

Inductor

Inductor




Vin=12V(typ),Vo1=1.2V,Io=1.5A,fosc=2350kHz1. P-ch MOS FET(MCH3312(SANYO) )

VDS=-30V, VGS=±20V, ID=-2A, RDS(on)=205mΩ(typ), Qg=5.5nC(typ)Drain current : Peak value

The peak value of the drain current of FET should be in the rated current value of FET.When the peak value of the drain current of FET is assumed to be ID, ID is obtained by the following formula.

The parts selection method is written in the following.

Vin - Vo12L

ton

≥≥≥≥ 1.5+2 ×××× 2.0 ×××× 10-6

12-1.2××××

2350 ×××× 103

1 ×××× 0.1

ID ≥≥≥≥ Io+

≥≥≥≥ 1.61A

CH1 1.2V output




2. Inductor(A916CY-2R0M : TOKO) 2µH(tolerance : ±20%) , rated current= 3.0A L value in the full-load current condition:It is set that the peak to peak value of the ripple current becomes 1/2 or less of load currents.

Load current value which becomes continuous current condition.

Ripple current : peak value The peak value of the ripple current should be in the rated current value of the inductor. When the peak value of the ripple current is assumed to be IL, IL is obtained by the following formula.

Ripple current : peak to peak value When the peak to peak value of the ripple current is assumed to be ∆IL, ∆IL is obtained by the following formula.

L ≥≥≥≥2(Vin - Vo1)

Ioton

2 ××××(12-1.2)1.5

×××× 0.1××××2350 ×××× 103

1≥≥≥≥

≥≥≥≥ 0.61µµµµH

Io ≥≥≥≥2L

Vo1toff

2 ×××× 2.0 ×××× 10-6

1.2 ××××2350 ×××× 103

1××××(1-0.1)≥≥≥≥

≥≥≥≥ 0.11A

Vin-Vo12L

ton

≥≥≥≥ 1.5 +2 ×××× 2.0 ×××× 10-6

12-1.2××××

2350 ×××× 103

1×××× 0.1

IL ≥≥≥≥ Io+

≥≥≥≥ 1.61A

Vin-Vo1L

ton

=2.0 ×××× 10-6

12-1.2××××

2350 ×××× 103

1

∆∆∆∆IL =

≅≅≅≅ 0.23A

×××× 0.1




3. Flyback Diode (SBE001: SANYO) VR=30V, IO =2.0A, IFSM =20A, VF=0.55V, at IF=2.0A

IDi ≥≥≥≥ Io ×××× (1- ) = 1.5 ×××× (1 - 0.1) ≅≅≅≅ 1.35A

Vo12L

toff)(Io+IDip ≥≥≥≥ ≅≅≅≅ 1.61A

VinVo1

VR should be a value which satisfies the input voltage enough. →30VDiode average current IDi is obtained by the following formula.

Diode peak current IDip is obtained by the following formula.




Vin=12V(typ),Vo2=3.3V,Io=1.0A,fosc=2350kHz1. P-ch MOS FET(MCH3312(SANYO) )



Vin - Vo22L

ton

≥≥≥≥ 1.0+2 ×××× 3.3 ×××× 10-6

12-3.3××××

2350 ×××× 103

1 ×××× 0.275

ID ≥≥≥≥ Io+

≥≥≥≥ 1.15A

CH2 3.3V output




2. Inductor(A916CY-3R3M : TOKO) 3.3µH(tolerance : ±20%), rated current= 2.57A

L value in the full-load current condition:It is set that the peak to peak value of the ripple current becomes 1/2 or less of load currents.




L ≥≥≥≥2(Vin - Vo2)

Ioton

2 ××××(12-3.3)1.0

×××× 0.275××××2350 ×××× 103

1≥≥≥≥

≥≥≥≥ 2.04µµµµH

Io ≥≥≥≥2L

Vo2toff

2 ×××× 3.3 ×××× 10-6

3.3 ××××2350 ×××× 103

1××××(1-0.275)≥≥≥≥

≥≥≥≥ 0.15A

Vin - Vo22L

ton

≥≥≥≥ 1.0 +2 ×××× 3.3 ×××× 10-6

12-3.3××××

2350 ×××× 103

1×××× 0.275

IL ≥≥≥≥ Io+

≥≥≥≥ 1.15A

Vin - Vo2L

ton

=3.3 ×××× 10-6

12-3.3××××

2350 ×××× 103

1

∆∆∆∆IL =

≅≅≅≅ 0.309A

×××× 0.275




3. Flyback Diode (SBE001: SANYO) VR=30V, IO =2.0A, IFSM =20A, VF=0.55V, at IF=2.0A

IDi ≥≥≥≥ Io ×××× (1- ) = 1.0 ×××× (1 - 0.275 ) ≅≅≅≅ 0.725A

Vo22L

toff)(Io+IDip ≥≥≥≥ ≅≅≅≅ 1.15A

VinVo2

VR should be a value which satisfies the input voltage enough. →30VDiode average current IDi is obtained by the following formula.





Vin=12V(typ),Vo3=5V,Io=0.3A,fosc=2350kHz1. P-ch MOS FET(MCH3312(SANYO) )



Vin - Vo32L

ton

≥≥≥≥ 0.3+2 ×××× 10 ×××× 10-6

12-5××××

2350 ×××× 103

1 ×××× 0.417

ID ≥≥≥≥ Io+

≥≥≥≥ 0.36A

CH3 5V output




2. Inductor(A916CY-100M : TOKO) 10µH(tolerance : ±20%), rated current= 1.49A

L value in the full-load current condition:It is set that the peak to peak value of the ripple current becomes 1/2 or less of load currents.




L ≥≥≥≥2(Vin - Vo3)

Ioton

2 ××××(12-5)0.3

×××× 0.417 ××××2350 ×××× 103

1≥≥≥≥

≥≥≥≥ 8.28µµµµH

Io ≥≥≥≥2L

Vo3toff

2 ×××× 10 ×××× 10-6

5 ××××2350 ×××× 103

1××××(1-0.417)≥≥≥≥

≥≥≥≥ 62.0mA

Vin - Vo32L

ton

≥≥≥≥ 0.3 +2 ×××× 10 ×××× 10-6

12-5××××

2350 ×××× 103

1 ×××× 0.417

IL ≥≥≥≥ Io+

≥≥≥≥ 0.36A

Vin - Vo3L

ton

=10 ×××× 10-6

12-5××××

2350 ×××× 103

1

∆∆∆∆IL =

≅≅≅≅ 0.124A

×××× 0.417




3. Flyback Diode (SBS005: SANYO) VR=30V, IO =1.0A, IFSM =10A, VF=0.35V, at IF=0.5A

IDi ≥≥≥≥ Io ×××× (1- ) = 0.3 ×××× (1 – 0.417 ) ≅≅≅≅ 0.175A

Vo12L

toff)(Io+IDip ≥≥≥≥ ≅≅≅≅ 0.36A

VinVo3

VR should be a value which satisfies the input voltage enough →30VDiode average current IDi is obtained by the following formula.





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sales representatives before ordering.The information and circuit diagrams in this document are presented as examples of semiconductor device

applications, and are not intended to be incorporated in devices for actual use.Also, FUJITSU is unable to assume responsibility for infringement of any patent rights or other rights of third parties arising from the use of this information or circuit diagrams.FUJITSU semiconductor devices are intended for use in standard applications (computers, office automation and

other office equipment, industrial, communications, and measurement equipment, personal or household devices, etc.).

CAUTION:Customers considering the use of our products in special applications where failure or abnormal operation may

directly affect human lives or cause physical injury or property damage, or where extremely high levels of reliability are demanded (such as aerospace systems, atomic energy controls, sea floor repeaters, vehicle operating controls, medical devices for life support, etc.) are requested to consult with FUJITSU sales representatives before such use. The company will not be responsible for damages arising from such use without prior approval.

Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions.

If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign Exchange and Foreign Trade Law of Japan, the prior authorization by Japanese government will be required for export of those products from Japan.

MB39A112EVB-01

EV board part No. EV board version No.

MB39A112EV Board Rev 1.0

Note

12. 12. Ordering InformationOrdering Information

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