Alberto Pirati, Sjoerd Lok, Rudy Peeters, Eric Verhoeven, Christophe Smeets, Daniel Smith , Arthur Minnaert, Martijn

van Noordenburg, Joerg Mallmann, Judon Stoeldraijer, Christian Wagner, David Brandt, Daniel Brown, Herman

Boom, Hans Meiling, Roderik van Es

EUVL, October 2015. Maastricht

EUV sources: progress towards industrialization

Public

October 2015

Slide 2

Public

The path towards industrialization

Throughput

Availability

= Productivity

X

October 2015

Slide 3

Public

EUV source supports NXE Industrialization Roadmap

TimingSource

power [W]

Throughput

[Wafers/hr]

Source

availability

[%]

Productivity

[Wafers/day]

Today 80 >55 >70% >500

2015 125 >75 >80% >1000

2016 250 >125 >90% >1500

NXE:33X0B throughput performance at >60 wafers per hour

NXE:3350B ATP conditions:

26x33mm, 96 fields, 20mJ/cm2

Field performance

Factory acceptance

October 2015

Public

Slide 4

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NXE:330B (40W) NXE:3300B (80W) NXE:3350B

Th

rou

gh

pu

t (W

pH

)

System configuration

Slide 5

Public

NXE:3350 Imaging: 16nm dense lines and 20nm iso space achieve <1.0nm Full Wafer CDU, on two machines

16nm

dense lin

es

20nm

iso

space

Test item Unit SpecMachine

AMachine

B

Imaging 16nm dense linesCDU

Intrafield at best focus nm ≤1.4 0.5 0.7

Intrafield at ±30 nm off focus nm ≤1.8 0.6 0.8

Full wafer at best focus nm ≤1.6 0.6 0.8

Test item Unit SpecMachine

AMachine

B

Imaging 20nm isolated spacesCDU – H

Intrafield at best focus nm ≤1.1 0.4 0.4

Intrafield at ±30 nm off focus nm ≤2.5 0.7 0.9

Full wafer at best focus nm ≤1.3 0.6 0.5

Tested with new ATP – 0mm field spacing and 15x9 grid (exposed at ~62 W/hr)

October 2015

Slide 6

Public

Two NXE:3350Bs show excellent matched machine overlay performance below 2.2 nm

6 nm

99.7%x: 2.0 nmy: 2.2 nm

XYMMO_MMO_150819_1525_wec (S2F)Wafer plot stacked

6 nm

99.7%x: 2.0 nmy: 1.9 nm

XYMMO_BMMO_150818_2144_wec (S2F)Wafer plot stackedSystem 1 System 2 System 2

Modelling: 5s flyer removal w2w, 10par per chuck removed, worst 99.7% of all points (standard NXE:3350B ATP) (exposed at ~62 W/hr)

October 2015

October 2015

Slide 7

Public

… and excellent dedicated chuck overlay performance

below 1.3 nm

Spec 1.5 nmSpec 1.5 nm

Modelling: 5s flyer removal w2w, worst 99.7% of all points (standard NXE:3350B ATP) (exposed at ~62 W/hr)

NXE:3300B install base migrating from 40W to 80W configurationUpgrade completed on 5 systems, on going on one more system

October 2015

Public

Slide 8

0

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40W 80W

Sys

tem

s

Configuration

Upgrade

ongoing

80 W configuration implementation Initial roll out at 60W, 80W operation started Slide 9

ConfidentialConfidential

Slide 9

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System A System B System C System D System E System F System G System H

Po

we

r [W

]

Power per system

40W configuration

80W configuration

October 2015

Slide 10

Public

NXE:3300B: stable 80W performance over one monthCustomer system

100

80

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ep

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nc

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Pow

er

at IF

(W

atts)

NXE:3350B: stable 95W performance over 10 daysAt ASML factory

October 2015

Public

Slide 11

17 Aug 27 Aug

Time

Power scaling towards 250W on goingDose optimization required towards 190W

EUV Power 183W

Run time 2 minutes

Conversion efficiency 4.9%

Dose overhead 12.6%

Dose error Out of spec

EUV Power 130W

Run time 1 hour

Conversion efficiency 4.5%

Dose overhead 25%

Dose error In spec

October 2015

Public

Slide 12

October 2015

Slide 13

Public

EUV source supports NXE Industrialization Roadmap

TimingSource

power [W]

Throughput

[Wafers/hr]

Source

availability

[%]

Productivity

[Wafers/day]

Today 80 >55 >70% >500

2015 125 >75 >80% >1000

2016 250 >125 >90% >1500

October 2015

Public

Focus 2015: improving source availabilityField upgrades executed/planned throughout 2015 to support >70% system

availability

Conversion

efficiency

Dose

margin

Drive laser

power

Laser to

droplet

control

Optical

transmission

Overhead

optimization

Exposure

dose

Stage accuracy

at high speed

>1000 WPD

in 2015

Automation

Collector lifetime

Droplet generator reliability

Drive laser reliability

Slide 14

Collector lifetime in 80W configuration towards ~6 months Estimated lifetime

October 2015

Public

Slide 15

2 Months

120

Co

lle

cto

r tr

an

sm

iss

ion

(%

)

100

80

40

20

0

60

Courtesy of

August 2 September 28

Collector: temperature optimization for power scaling

October 2015

Public

Slide 16

1. Decrease collector temperature to

enhance EUV self cleaning effect

EUV induced etching effect restores

collector reflectivity

Collector: flow optimization for power scaling

October 2015

Public

Slide 17

1. Collector protective flows,

increase with source power

Test results on NXE:3350B source at 95W:

estimated lifetime >6 months

October 2015

Public

Slide 18

In situ collector cleaning to extend lifetime

October 2015

Slide 19

Public

Droplet generator: >1.5x lifetime improvement in

the last quarter

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40W Droplet Generator

80W Droplet Generator

13 weeks runtime moving average

Six EUV sources capable of >70% availability Best 4 weeks average at customers

Availability = productive + stand-by + engineering time

October 2015

Public

Slide 20

0

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Ava

ila

bil

ity [

%]

0%

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100%

26 27 28 29 30 31 32 33 34 35 36 37 38

EUV source availability improving towards 70%5 field systems – upgrades reduce variability

Availability = productive + stand-by + engineering time

Average +/- standard deviation of 5 sources, 4 weeks average

October 2015

Public

Slide 21

Ava

ila

bil

ity [

%]

Week

80 Watt upgrades and

recovery on going

Solutions towards

>80% defined

EUV source supports NXE Industrialization Roadmap

TimingSource

power [W]

Throughput

[Wafers/hr]

Source

availability

[%]

Productivity

[Wafers/day]

Today 80 >55 >70% >500

2015 125 >75 >80% >1000

2016 250 >125 >90% >1500

October 2015

Public

Slide 22

7 field NXE:3300B at 500 wafers per day1,000 wafers per day capability demonstrated

Maximum number of customer wafer exposures in a 24 hour period

Customer systems (NXE:3300B)

October 2015

Public

Slide 23

0

200

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1400

Actual customer exposures

Customer exposures at 100% utilization

Wa

fers

pe

r d

ay

October 2015

Slide 24

Public

Four-week marathon test: >15,000 wafers exposedAvailability at 70%, wafers met requirements for dose, CD and overlay

Semicon TaiwanSeptember 2015

October 2015

Slide 25

Public

EUV source supports NXE Industrialization Roadmap

TimingSource

power [W]

Throughput

[Wafers/hr]

Source

availability

[%]

Productivity

[Wafers/day]

Today 80 >55 >70% >500

2015 125 >75 >80% >1000

2016 250 >125 >90% >1500

Done Capability demonstrated On track

October 2015

Slide 26

Public

Summary: EUV towards production insertion

At customers

• 8 NXE:3300B systems shipped and qualified, 1 NXE:3350B completed qualification at 62 wafers per hour

• 7 systems capable of 500 wafers per day, stable performance over 4 weeks demonstrated

• 80W configuration implemented on majority of install base

• More than 1000 wafers per day demonstrated during endurance test on one NXE:3300B

• 6 sources demonstrated >70% availability capability

• Demonstrated 130W power, optimization towards >180W on going

Acknowledgements

ASML customers

ASML employees:

Sjoerd Lok, Marrit Hermans, Yong-Jin Byun,

Jeannot Driedonkx, Nicolae Maxim, Lisa

Mohanty, Niclas Mika, Sander Hofmann,

Tomasz Bak, Giuseppina Toto, Jan-Willem

van der Horst, Jowan Jacobs, William van

Drent, Ivo de Jong