Enabling integrated active photonics with transfer printing · Enabling integrated active photonics...

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Brian Corbett Enabling integrated active photonics with transfer printing Tyndall National Institute, University College Cork, IRELAND

Transcript of Enabling integrated active photonics with transfer printing · Enabling integrated active photonics...

Page 1: Enabling integrated active photonics with transfer printing · Enabling integrated active photonics with transfer printing Tyndall National Institute, University College Cork, IRELAND.

Brian Corbett

Enabling integrated active photonics with transfer printing

Tyndall National Institute, University College Cork, IRELAND

Page 2: Enabling integrated active photonics with transfer printing · Enabling integrated active photonics with transfer printing Tyndall National Institute, University College Cork, IRELAND.

Outline

• Opportunities for photonics

• Integration strategy

• Examples of transfer printing

• Scaling with pilot line

• Outlook

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Opportunities for photonics

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Opportunities for photonics

• Highly versatile to cover any wavelength from UV to NIR

• Critical element in many everyday applicationsCommunications, illumination, sensing, power, medical,..Only solution for high bandwidth, high density interconnects

• Expanding applicationsData centres (communication and storage) Backhaul for 5G LIDAR

• Key technology for EuropeOptical components and systems

• E7.8B which is 32% of the global market

Optech Consulting, Market Research Study Photonics 2017; photonics21.org

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Challenges for photonics

• Applications with high volume potential demand low-cost Photonic devices individually packaged comprising 70% of cost

• Applications need sources, waveguiding, modulating. sensing, etc

• Photonic subsystem Multiplicity of materials and device structures for optimum performance

• Need an effective integration strategy to make un-compromised photonic circuits

• Is there an equivalent platform as CMOS for electronics?

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Platforms for photonics (EU)

• InP

• Silicon Photonics (CEA-LETI; imec,..

• SiN (LioniX, imec)

• Mid infra-red

• Packaging

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InP materials for 1550nm light

• Wafer diameter typically 75mm-100mmQuality down to material science and engineering

• No critical imperative to improve (invest)

• Why?One 75mm wafer can deliver ~20,000 lasers

Each laser can deliver 10Gbps

→ 200 Tbps available per wafer

• Size mismatch with silicon wafers and other platforms

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Integration strategy

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Vision for integration strategy

• Produce the optimum components in the most appropriate environment and then heterogeneously integrate with the platform in parallel and scalable manner.

III-V device fabrication

Specialist material preparation

Sensor device fabrication

Platform fabrication(e.g. Si photonics)

Complete subsystemHeterogeneously

Integrate

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Transfer print integration

• Heterogeneous integration by transfer of devices (or materials) from a native substrate to a chosen new substrate

• Combination of:• Inking and printing• Substrate separation

• Breakthrough* was the registration of devices and the use of massively parallel, deterministic transfer of the devices

* E. Menard, R. G. Nuzzo, and J. A. Rogers, Appl. Phys. Lett. 86, 093507 (2005).

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Transfer print steps

Preparation of devices Printing devicesPickup of devices Transfer of devices

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Transfer print implementation

• Tools, processes and patent portfolio established by X-Celeprint

• Based at Tyndall and North Carolina

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Advantages for micro-Transfer Printing

• Massively parallel (>10,000 devices transferred per 45s cycle)

• Position tolerance of ±1.5mm at 3s

• Different types of devices or materials can be printed close to each other

• Efficient use of source materials

• Requirements receiving location is locally flat (provide by polymer adhesive)

prepare devices with high contrast alignment marks

connect up devices

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Examples of transfer printing

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Example 1: GaAs lasers on ceramic wafers

• Ceramic wafer platform used to produce read-write heads for hard-drive magnetic recording ~5M ‘heads’ produced per day worldwide

• A laser is needed to implement Heat Assisted Magnetic Recording (HAMR) but at minimal additional cost

http://blog.seagate.com/business/seagate-continues-to-lead-as-hamr-technology-advances/

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Integrate laser directly on head

• Print coupons of laser material to target

• Post-process into lasers on new substrate

5 mm

Silicon substrate

N-GaAs

N-AlGaAs

P-AlGaAsP-GaAs

2 x Quantum

wells

J Justice, et al “Wafer-scale integration of group III–V lasers on silicon using transfer printing of epitaxial layers”, Nat. Photon. 6, 612 (2012); B. Corbett, et al “Strategies for integration of lasers on silicon”, Semicond. Sci. Technol. 28 094001 (2013)

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Example 2: InP lasers for Silicon Photonics

• Hybrid circuits based on Si Photonics Complexity growing massively on 200mm wafers Pilot lines at imec, CEA-LETI, AIM, A*STAR-IME, Multiple commercial foundries

• Clear solution for manufacturing photonic integrated circuits in a similar manner to electronic circuits

• Crux – how to include amplification Laser as power source (external) Laser as oscillator (on chip)

Heck et al Nanophotonics 6 93, 2017

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Example 2: InP lasers for Silicon Photonics

• Lasers can be integrated by:

• evanescent coupling

• butt coupling

Buried Oxide

Silicon substrate

Silicon device layerOxide over-cladding

III-V laser

Polymer infill

Buried Oxide

Silicon substrate

Silicon device layer Interface

III-V laser

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Transfer print project (TOP HIT)

• H2020 EU funded project in Smart System Integration

www.tophit-ssi.eu

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InP laser preparation

R. Loi, et al, “Transfer Printing of AlGaInAs/InP Etched Facet Lasers to Si Substrates,” IEEE Photon. J. 8 (6), 1-10, 2016

Tether Bottom of released couponTethered lasers on InP substrate

Lasers on Si substrate Laser on Si Laser cross-section

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1550nm laser integration

Buried Oxide

Silicon substrate

Silicon device layerOxide over-cladding

III-V laser

Laser Si waveguide

Waveguide modes

Aligned laser Si photonics facet

Out-coupled spectrum

Laser SiPh

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Integrating silicon electronics

• Circuits design on X-FAB foundry process

Silicon IC printed on a functional substrate

Positional accuracy better than ±1mm in x and y

-1 SD 1 SD50%

1.5 Box-1.5 Box

-1.0 -0.5 0.0 0.5 1.00

20

40

60

80

100

Count

Displacement (Y) (mm)

Displacement (Y)

-1 SD 1 SD50%

1.5 Box-1.5 Box

-1.5 -1.0 -0.5 0.0 0.5 1.00

20

40

60

80

100

120

Count

Displacement (X) (mm)

Displacement (X)

itride layer

resist

BOX

Si handle wafer

Si device layer (SOI)

nitride tether

release etch

channel

ILD

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Example 3: Display concept

X-Celeprint Limited © 2017

Plastic or glass substrate:

Light, flexible, robust

R / G / B µLEDs:

low power consumption and bright, defect tolerance

µICs:

CMOS performance,

embedded memory and

novel design concepts

* the printed µIC should

control a cluster of pixels

Transparent

* Fine and/or

transparent wiring

level

Room to do more!The sparsely integrated µLEDs

allow for new functions: µ-

sensors, power harvest, gesture

sense, image capture, RF, etc…

C.A.Bower, et al. "Emissive displays with transfer-printed assemblies of 8 μm× 15 μm inorganic light-emitting diodes." Photonics Research 5.2 (2017): A23-A29.

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Passive Matrix MicroLED Display

1 cm0.2 mm

30,000 MicroLEDs on glass8 x 15 µm MicroLED

M. Meitl, et a 55‐1: Invited Paper: Passive Matrix Displays with Transfer‐Printed Microscale Inorganic

LEDs. In SID Symposium Digest of Technical Papers (Vol. 47, No. 1, pp. 743-746 2016).

~ 1% fill factor

X-Celeprint Limited © 2017

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Flexible Plastic Micro LED Displays

X-Celeprint Limited © 2017

• 100 BBB x 100 pixels • (3 blue LEDs per pixel)• 100 µm pixel• 10,000 posts on stamp• 3 print operations

M. Meitl, et al. 55‐1: Invited Paper: Passive Matrix Displays with Transfer‐Printed Microscale Inorganic LEDs. In SID Symposium Digest of Technical Papers (Vol. 47, No. 1, pp. 743-746 2016).

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Micro-IC Driven Micro-LED Displays

X-Celeprint Limited © 2017

0.1 mm

33 x 38 x 5 µm micro-IC

1 cm

Prototype display with microscale 180nm CMOS LED drivers within each pixel.

C.A. Bower, et al. "Emissive displays with transfer-printed assemblies of 8 μm× 15 μm

inorganic light-emitting diodes." Photonics Research 5.2 (2017): A23-A29.

six µ-iLEDs and two µ-ICs in each pixel.

412 transistors per pixel; 1.8V & 5V, 180 nm CMOS.

Digital row and column inputs; current set in µ-ICs.

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Scaling with pilot line

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Making the technology foundry accessible

• Transfer the µTP-technology to an industrial environment Bridging the “Valley-of-Death” to industrialization

• µTP pilot line in manufacturing environment for open accessDevelopment of design rules (DR) and its implementation in Process-

Design-Kits (PDK)

• Development of processes for heterogeneous system integration for CMOS and MEMS wafersRealization of processes for source wafer preparation, transfer printing and

post-processing on 200mm silicon wafers

MICROPRINCE Grant Agreement No. 737465

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Microprince project

• Technology demonstration for five defined target applications for magnetic and optical sensing and photonic systems

This work is partially funded by the projects MICROPRINCE. The This project has received funding from the Electronic Component Systems for European Leadership Joint Undertaking under grant agreement No 737465. This Joint Undertaking receives support from the European Union’s Horizon 2020 research and innovation program and Germany, Belgium, Ireland.

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Outlook

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The future with micro transfer printing

• Enabling low-cost, user-designed photonic sub-systemsNo need to be an expert in semiconductor physics or device technology

Verification software

• Applicability and versatility of photonics maintained

• Compatibility with existing platforms

• Photonics not a stand-alone technology

• Vast range of new opportunities for photonics by using transfer printing

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Tyndall National Institute,

Lee Maltings,

Dyke Parade,

Cork,

Ireland.

T12 R5CP

t: +353 21 490 4177

e: [email protected]

tyndall.ie

Thanks

to you for listening

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our funders