Enabling integrated active photonics with transfer printing · Enabling integrated active photonics...
Transcript of Enabling integrated active photonics with transfer printing · Enabling integrated active photonics...
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Brian Corbett
Enabling integrated active photonics with transfer printing
Tyndall National Institute, University College Cork, IRELAND
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Outline
• Opportunities for photonics
• Integration strategy
• Examples of transfer printing
• Scaling with pilot line
• Outlook
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Opportunities for photonics
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Opportunities for photonics
• Highly versatile to cover any wavelength from UV to NIR
• Critical element in many everyday applicationsCommunications, illumination, sensing, power, medical,..Only solution for high bandwidth, high density interconnects
• Expanding applicationsData centres (communication and storage) Backhaul for 5G LIDAR
• Key technology for EuropeOptical components and systems
• E7.8B which is 32% of the global market
Optech Consulting, Market Research Study Photonics 2017; photonics21.org
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Challenges for photonics
• Applications with high volume potential demand low-cost Photonic devices individually packaged comprising 70% of cost
• Applications need sources, waveguiding, modulating. sensing, etc
• Photonic subsystem Multiplicity of materials and device structures for optimum performance
• Need an effective integration strategy to make un-compromised photonic circuits
• Is there an equivalent platform as CMOS for electronics?
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Platforms for photonics (EU)
• InP
• Silicon Photonics (CEA-LETI; imec,..
• SiN (LioniX, imec)
• Mid infra-red
• Packaging
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InP materials for 1550nm light
• Wafer diameter typically 75mm-100mmQuality down to material science and engineering
• No critical imperative to improve (invest)
• Why?One 75mm wafer can deliver ~20,000 lasers
Each laser can deliver 10Gbps
→ 200 Tbps available per wafer
• Size mismatch with silicon wafers and other platforms
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Integration strategy
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Vision for integration strategy
• Produce the optimum components in the most appropriate environment and then heterogeneously integrate with the platform in parallel and scalable manner.
III-V device fabrication
Specialist material preparation
Sensor device fabrication
Platform fabrication(e.g. Si photonics)
Complete subsystemHeterogeneously
Integrate
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Transfer print integration
• Heterogeneous integration by transfer of devices (or materials) from a native substrate to a chosen new substrate
• Combination of:• Inking and printing• Substrate separation
• Breakthrough* was the registration of devices and the use of massively parallel, deterministic transfer of the devices
* E. Menard, R. G. Nuzzo, and J. A. Rogers, Appl. Phys. Lett. 86, 093507 (2005).
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Transfer print steps
Preparation of devices Printing devicesPickup of devices Transfer of devices
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Transfer print implementation
• Tools, processes and patent portfolio established by X-Celeprint
• Based at Tyndall and North Carolina
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Advantages for micro-Transfer Printing
• Massively parallel (>10,000 devices transferred per 45s cycle)
• Position tolerance of ±1.5mm at 3s
• Different types of devices or materials can be printed close to each other
• Efficient use of source materials
• Requirements receiving location is locally flat (provide by polymer adhesive)
prepare devices with high contrast alignment marks
connect up devices
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Examples of transfer printing
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Example 1: GaAs lasers on ceramic wafers
• Ceramic wafer platform used to produce read-write heads for hard-drive magnetic recording ~5M ‘heads’ produced per day worldwide
• A laser is needed to implement Heat Assisted Magnetic Recording (HAMR) but at minimal additional cost
http://blog.seagate.com/business/seagate-continues-to-lead-as-hamr-technology-advances/
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Integrate laser directly on head
• Print coupons of laser material to target
• Post-process into lasers on new substrate
5 mm
Silicon substrate
N-GaAs
N-AlGaAs
P-AlGaAsP-GaAs
2 x Quantum
wells
J Justice, et al “Wafer-scale integration of group III–V lasers on silicon using transfer printing of epitaxial layers”, Nat. Photon. 6, 612 (2012); B. Corbett, et al “Strategies for integration of lasers on silicon”, Semicond. Sci. Technol. 28 094001 (2013)
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Example 2: InP lasers for Silicon Photonics
• Hybrid circuits based on Si Photonics Complexity growing massively on 200mm wafers Pilot lines at imec, CEA-LETI, AIM, A*STAR-IME, Multiple commercial foundries
• Clear solution for manufacturing photonic integrated circuits in a similar manner to electronic circuits
• Crux – how to include amplification Laser as power source (external) Laser as oscillator (on chip)
Heck et al Nanophotonics 6 93, 2017
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Example 2: InP lasers for Silicon Photonics
• Lasers can be integrated by:
• evanescent coupling
• butt coupling
Buried Oxide
Silicon substrate
Silicon device layerOxide over-cladding
III-V laser
Polymer infill
Buried Oxide
Silicon substrate
Silicon device layer Interface
III-V laser
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Transfer print project (TOP HIT)
• H2020 EU funded project in Smart System Integration
www.tophit-ssi.eu
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InP laser preparation
R. Loi, et al, “Transfer Printing of AlGaInAs/InP Etched Facet Lasers to Si Substrates,” IEEE Photon. J. 8 (6), 1-10, 2016
Tether Bottom of released couponTethered lasers on InP substrate
Lasers on Si substrate Laser on Si Laser cross-section
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1550nm laser integration
Buried Oxide
Silicon substrate
Silicon device layerOxide over-cladding
III-V laser
Laser Si waveguide
Waveguide modes
Aligned laser Si photonics facet
Out-coupled spectrum
Laser SiPh
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Integrating silicon electronics
• Circuits design on X-FAB foundry process
Silicon IC printed on a functional substrate
Positional accuracy better than ±1mm in x and y
-1 SD 1 SD50%
1.5 Box-1.5 Box
-1.0 -0.5 0.0 0.5 1.00
20
40
60
80
100
Count
Displacement (Y) (mm)
Displacement (Y)
-1 SD 1 SD50%
1.5 Box-1.5 Box
-1.5 -1.0 -0.5 0.0 0.5 1.00
20
40
60
80
100
120
Count
Displacement (X) (mm)
Displacement (X)
itride layer
resist
BOX
Si handle wafer
Si device layer (SOI)
nitride tether
release etch
channel
ILD
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Example 3: Display concept
X-Celeprint Limited © 2017
Plastic or glass substrate:
Light, flexible, robust
R / G / B µLEDs:
low power consumption and bright, defect tolerance
µICs:
CMOS performance,
embedded memory and
novel design concepts
* the printed µIC should
control a cluster of pixels
Transparent
* Fine and/or
transparent wiring
level
Room to do more!The sparsely integrated µLEDs
allow for new functions: µ-
sensors, power harvest, gesture
sense, image capture, RF, etc…
C.A.Bower, et al. "Emissive displays with transfer-printed assemblies of 8 μm× 15 μm inorganic light-emitting diodes." Photonics Research 5.2 (2017): A23-A29.
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Passive Matrix MicroLED Display
1 cm0.2 mm
30,000 MicroLEDs on glass8 x 15 µm MicroLED
M. Meitl, et a 55‐1: Invited Paper: Passive Matrix Displays with Transfer‐Printed Microscale Inorganic
LEDs. In SID Symposium Digest of Technical Papers (Vol. 47, No. 1, pp. 743-746 2016).
~ 1% fill factor
X-Celeprint Limited © 2017
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Flexible Plastic Micro LED Displays
X-Celeprint Limited © 2017
• 100 BBB x 100 pixels • (3 blue LEDs per pixel)• 100 µm pixel• 10,000 posts on stamp• 3 print operations
M. Meitl, et al. 55‐1: Invited Paper: Passive Matrix Displays with Transfer‐Printed Microscale Inorganic LEDs. In SID Symposium Digest of Technical Papers (Vol. 47, No. 1, pp. 743-746 2016).
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Micro-IC Driven Micro-LED Displays
X-Celeprint Limited © 2017
0.1 mm
33 x 38 x 5 µm micro-IC
1 cm
Prototype display with microscale 180nm CMOS LED drivers within each pixel.
C.A. Bower, et al. "Emissive displays with transfer-printed assemblies of 8 μm× 15 μm
inorganic light-emitting diodes." Photonics Research 5.2 (2017): A23-A29.
six µ-iLEDs and two µ-ICs in each pixel.
412 transistors per pixel; 1.8V & 5V, 180 nm CMOS.
Digital row and column inputs; current set in µ-ICs.
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Scaling with pilot line
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Making the technology foundry accessible
• Transfer the µTP-technology to an industrial environment Bridging the “Valley-of-Death” to industrialization
• µTP pilot line in manufacturing environment for open accessDevelopment of design rules (DR) and its implementation in Process-
Design-Kits (PDK)
• Development of processes for heterogeneous system integration for CMOS and MEMS wafersRealization of processes for source wafer preparation, transfer printing and
post-processing on 200mm silicon wafers
MICROPRINCE Grant Agreement No. 737465
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Microprince project
• Technology demonstration for five defined target applications for magnetic and optical sensing and photonic systems
This work is partially funded by the projects MICROPRINCE. The This project has received funding from the Electronic Component Systems for European Leadership Joint Undertaking under grant agreement No 737465. This Joint Undertaking receives support from the European Union’s Horizon 2020 research and innovation program and Germany, Belgium, Ireland.
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Outlook
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The future with micro transfer printing
• Enabling low-cost, user-designed photonic sub-systemsNo need to be an expert in semiconductor physics or device technology
Verification software
• Applicability and versatility of photonics maintained
• Compatibility with existing platforms
• Photonics not a stand-alone technology
• Vast range of new opportunities for photonics by using transfer printing
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Tyndall National Institute,
Lee Maltings,
Dyke Parade,
Cork,
Ireland.
T12 R5CP
t: +353 21 490 4177
tyndall.ie
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